KR20130094036A - Slit-shape nozzle, and this manufacturing method - Google Patents

Abstract

The slit nozzle according to the present invention comprises: a chamber including a body portion having a receiving groove for accommodating supplied ink, and a discharge portion extending from the body portion; A conductive film coupled to the chamber to impart charge to the ink contained in the receiving groove by an applied power source; It characterized in that the discharge portion is in communication with the receiving groove is formed with a slant to form a slit to discharge the ink as well as narrower toward the end of the slit, characterized in that the method for producing this .
Thereby, there is provided a slit-type nozzle capable of suppressing or preventing a nozzle clogging phenomenon, facilitating ejection of ink, and particularly increasing its effect in electrohydraulic inkjet printing, and a method of manufacturing the same. Further, there is provided a slit-shaped nozzle for facilitating cleaning of a nozzle and a manufacturing method thereof.

Description

[0001] The present invention relates to a slit-shaped nozzle,

The present invention relates to a slit type nozzle and a method of manufacturing the same, and more particularly, to a slit type nozzle and a method of manufacturing the slit type nozzle, To facilitate the cleaning of the nozzle, and a method of manufacturing the same.

Generally, in inkjet printing, ink droplets are ejected onto recording media such as paper from nozzles arranged side by side in an inkjet printer. The discharged ink droplets form points called "dots" to record characters and images. Inkjet printing is advantageous in that it is less expensive than other printing methods, has high quality, and is easy to form color images. The ink used for inkjet printing is prepared by dissolving or dispersing a water-soluble dye or pigment in a solvent containing water and a water-soluble organic solvent. If necessary, an additive such as a surfactant may be added.

Here, inkjet printing is classified into a piezoelectric method in which ink is ejected using a piezoelectric element in accordance with a method of ejecting ink droplets, a thermal method in which ink is ejected using a heating element, And an electrohydraulic method in which an ink having a charge is ejected using an electrohydrodynamic (EHD) pressure.

In particular, the electrohydraulic inkjet printing has an advantage of using an ink having a higher viscosity than other inkjet printing methods.

However, in the conventional ink-jet printing, there is a problem that clogging of the ink discharge nozzle occurs and discharge of the ink is hindered as a portion in which the ink is discharged from the nozzle is formed in a tube shape. Particularly, in the case of inkjet printing of the electrohydraulic method, the aforementioned problems are more frequently caused by using the ink having a high viscosity.

In addition, there is a problem that nozzle cleaning is difficult in a tubular nozzle.

Therefore, it is an object of the present invention to solve such conventional problems, and it is an object of the present invention to provide an ink jet printing method capable of suppressing or preventing clogging of nozzles, facilitating ejection of ink, And a method of manufacturing the same.

The present invention also provides a slit-shaped nozzle for facilitating cleaning of the nozzle, and a method of manufacturing the same.

According to the present invention, a chamber comprising a body portion formed with a receiving groove for accommodating supplied ink, and a discharge portion extending from the body portion; A conductive film coupled to the chamber to impart charge to the ink contained in the receiving groove by an applied power source; The discharge unit is achieved by the slit nozzle, characterized in that the inclined surface is formed so that the width is narrowed toward the end of the slit as well as the slit through which the ink is discharged in communication with the receiving groove is formed.

Here, the width of the discharge portion at the end of the slit is preferably equal to or greater than the width of the slit, and is equal to or smaller than the thickness of the discharge portion.

Here, the chamber is a support body coupled to support the body portion; As shown in Fig.

Here, the support body is preferably formed to extend so as to be spaced apart from the discharge portion.

Here, the conductive film may include at least one conductive portion of a first conductive portion coupled to the body portion and forming a supply hole communicating with the receiving groove, and a second conductive portion coupled to the discharge portion to form the slit .

According to the present invention, there is provided a method of manufacturing a slit-type nozzle using a first silicon layer formed of any one of polycrystalline silicon and n-type single crystal silicon, An oxide film forming step of applying heat to form an oxide film layer on the substrate; An etching step of removing a portion of the oxide layer after the oxide film forming step; A base forming step of sequentially laminating a second silicon layer and a conductive layer on the first silicon layer after the etching step; A first slit forming step of removing a portion of the conductive layer so as to form a supply part and a first slit part in the conductive layer after the base forming step; A second slit forming step of removing a portion of the second silicon layer so that an accommodating part and a second slit part are formed in the second silicon layer after the first slit forming step; A corrosion step of removing the remaining oxide layer after the base forming step; A nozzle tip forming step of removing a portion of the second silicon layer and the conductive layer to narrow the width at an end of the first slit portion or the second slit portion after the base forming step; It is achieved by the manufacturing method of the slit-type nozzle containing.

Here, the second silicon layer may be formed of any one of polycrystalline silicon and n-type single crystal silicon.

According to the present invention, there is provided a method of manufacturing a slit-shaped nozzle using a first silicon layer formed of any one of polycrystalline silicon and n-type single crystal silicon, ; A base forming step of laminating a conductive layer on the first silicon layer after the processing step; A first slit forming step of removing a portion of the conductive layer so as to form a supply part and a first slit part in the conductive layer after the base forming step; A second slit forming step of removing a part of the first silicon layer after the first slit forming step, so that an accommodating part and a second slit part are formed in the first silicon layer; A nozzle tip forming step of removing a portion of the first silicon layer and the conductive layer to narrow the width at an end of the first slit portion or the second slit portion after the base forming step; And a method of manufacturing a slit-shaped nozzle.

Here, the inversion step of inverting the first silicon layer after the processing step; As shown in Fig.

Here, the conductive film treatment step of removing a portion of the conductive layer after the base forming step; And the first slit forming step may form one of the supplying part and the first slit part according to the conductive layer removed through the conductive film processing step.

Here, the chamber forming step of cutting the first silicon layer to be separated into a separate nozzle after the base forming step; As shown in Fig.

According to the present invention, there is provided a slit-type nozzle capable of suppressing or preventing the clogging of nozzles, facilitating ejection of ink, and particularly increasing its effect in electrohydraulic inkjet printing, and a method of manufacturing the same .

Further, there is provided a slit-shaped nozzle for facilitating cleaning of a nozzle and a manufacturing method thereof.

There is also provided a slit type nozzle capable of reducing the droplet size of ink to be ejected and improving the printing accuracy and a method of manufacturing the same.

There is also provided a slit-type nozzle capable of suppressing or preventing breakage of an end of a nozzle by a power source applied even in ink ejection repeated in an electrohydraulic inkjet printing, and a method of manufacturing the same.

Further, a slit-shaped nozzle capable of finely manufacturing a nozzle is provided, and a manufacturing method thereof is provided.

Further, there is provided a slit-shaped nozzle for facilitating the manufacture of the nozzle and a manufacturing method thereof.

1 is a perspective view showing a slit-shaped nozzle according to an embodiment of the present invention,
2 is a cross-sectional view of a silicon substrate according to an embodiment of the present invention,
3 is a cross-sectional view illustrating an oxide film forming step according to an embodiment of the present invention,
FIGS. 4 and 5 are cross-sectional views illustrating an etching step according to an embodiment of the present invention;
6 is a cross-sectional view illustrating a base forming step according to an embodiment of the present invention;
7 is a cross-sectional view showing a first slit forming step according to an embodiment of the present invention,
8 is a cross-sectional view illustrating a second slit forming step according to an embodiment of the present invention,
9 is a cross-sectional view illustrating a corrosion step according to an embodiment of the present invention;
10 is a cross-sectional view illustrating a nozzle tip forming step according to an embodiment of the present invention.

Prior to the description, components having the same configuration are denoted by the same reference numerals as those in the first embodiment. In other embodiments, configurations different from those of the first embodiment will be described do.

Hereinafter, a slit nozzle according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

1 is a perspective view showing a slit nozzle according to an embodiment of the present invention. Referring to FIG. 1, a slit nozzle according to an embodiment of the present invention includes a chamber 2, a conductive film 3 ). Here, the chamber 2 may further include a support body 1.

The chamber 2 may be formed by processing a wafer made of polycrystalline silicon or n-type single crystal silicon by forming an ink discharge path so that the supplied ink can be discharged. The chamber 2 can receive the ink to be supplied.

The chamber 2 includes a body portion 21 and a discharge portion 22. The body portion 21 is formed with a receiving groove 23 for receiving ink to be supplied. The discharging portion 22 is formed to extend from the body portion 21. The discharging portion 22 can be formed by processing a part of the wafer to be provided.

 Here, the discharge portion 22 is formed with a sloped surface SL in which the slit SP is communicated with the receiving groove 23 to discharge the ink, and the width of the slit SP becomes narrower toward the end of the slit SP.

The width W2 of the discharge portion 22 at the end of the slit SP is equal to or greater than the width W1 of the slit SP and is equal to or smaller than the thickness t of the discharge portion 22. [ . The size of the droplet can be changed in accordance with the width W2 of the discharge portion 22 at the end of the slit SP rather than the width W1 of the slit SP when the ink is discharged.

The conductive film 3 is coupled to the chamber 2 to apply electric charge to the ink by an applied power source and includes at least one conductive portion of the first conductive portion 31 and the second conductive portion 32. The first conductive part 31 is coupled to the body part 21 and forms a supply hole 33 communicating with the receiving groove 23 formed in the body part 21. [ The second conductive portion 32 is coupled to the discharge portion 22 and a slit SP communicating with the slit SP formed in the discharge portion 22 is formed. Here, when the conductive film 3 includes both the first conductive portion 31 and the second conductive portion 32, it is advantageous that the first conductive portion 31 and the second conductive portion 32 are formed simultaneously . When the second conductive portion 32 is formed in the discharge portion 22, the thickness t of the discharge portion 22 may include the thickness of the second conductive portion 32.

The support body (1) is coupled to support the body part (21). The support body 1 may be formed so as to be spaced apart from the discharge portion 22. [ The supporting body 1 can be formed by processing a wafer made of polycrystalline silicon or n-type single crystal silicon. In one embodiment of the present invention, when the supporting body 1 is further formed, the chamber 2 can be formed by stacking poly-silicon or n-type single crystal silicon on the supporting body 1 .

Next, a method of manufacturing the slit-shaped nozzle having the above-described structure will be described.

First, a case where a structure in which a second silicon layer (PS) is laminated on a first silicon layer SB will be described.

A method of manufacturing a slit nozzle according to a first method includes forming an oxide film S1, an etching step S2, a base forming step S3, a first slit forming step S4, and a second slit forming step S5, a corrosion step S6, and a nozzle tip forming step S7. Here, the method may further include at least one of a conductive film processing step S3-1 and a chamber forming step S3-2.

FIG. 2 is a cross-sectional view of a first silicon layer according to an embodiment of the present invention. FIG. 2 is a cross-sectional view of a first silicon layer according to an embodiment of the present invention. FIG. And FIG. 3 is a cross-sectional view illustrating an oxide film forming step according to an embodiment of the present invention. FIGS. 4 and 5 are cross-sectional views illustrating an etching step according to an embodiment of the present invention. 7 is a cross-sectional view illustrating a first slit forming step according to an embodiment of the present invention. FIG. 8 is a cross-sectional view illustrating a step of forming a second slit according to an embodiment of the present invention. FIG. 9 is a cross-sectional view illustrating an etching step according to an embodiment of the present invention, and FIG. 10 is a cross-sectional view illustrating a nozzle tip forming step according to an embodiment of the present invention.

Referring to FIG. 2, in the case of manufacturing the slit-shaped nozzle according to the first method, the first silicon layer SB is composed of a wafer made of either silicon of poly-silicon or n-type single crystal silicon . The first silicon layer SB used in the first method may be formed of a wafer made of n-type single crystal silicon. The n-type single crystal silicon can form a very thin and highly efficient wafer. The first silicon layer SB forms the above-described supporting body 1 when the processing is completed.

The thickness of the first silicon layer SB may be about 300 micrometers. However, the thickness of the first silicon layer SB is not limited thereto, but may be changed depending on the thickness of the wafer to be provided.

Referring to FIG. 3, in the oxide film forming step S1, heat is applied to form an oxide film layer TO on the surface of the first silicon layer SB. In the oxide film forming step S1, a thin and uniform silicon oxide film (SiO2) can be formed on the surface of the first silicon layer SB by injecting oxygen or steam at a high temperature and applying heat. The oxide film forming step S1 may be classified into a dry oxidation method of inducing an oxidation reaction by injecting dry oxygen and a wet oxidation method of inducing an oxidation reaction by injecting steam.

The dry oxidation method can form a good quality oxide film, and the wet oxidation method can grow the oxide film very rapidly.

The thickness of the oxide film layer TO may be about 0.2 micrometer. The oxide film layer TO formed by the oxidation method described above is grown 0.54 times the thickness of the oxide film layer TO and 0.46 times the thickness of the oxide film layer TO can be formed by deforming the first silicon layer SB have.

Referring to FIGS. 4 and 5, the etching step S2 removes a part of the oxide film layer TO. In the etching step S2, it is sufficient that a part of the oxide film layer TO can be removed by one of various known etching methods. In the first method, the etching step S2 can remove a part of the oxide film layer TO by a method of laminating a photoresist PR on the oxide film layer TO and wet etching using an etching solution. After the oxide film layer TO is partially removed, the photoresist PR is removed.

Referring to FIG. 6, the base forming step S3 includes sequentially laminating the second silicon layer PS and the conductive layer CR on the first silicon layer SB through the etching step S2. The base forming step S3 may form the second silicon layer PS and the conductive layer CR by one of various known deposition methods. In the first method, the second silicon layer (PS) and the conductive layer (CR) can be formed through LPCVD (Low Pressure Chemical Vapor Deposition).

Here, the second silicon layer PS may be formed by stacking one of polysilicon and n-type single-crystal silicon on the first silicon layer SB. In the first method, the second silicon layer (PS) may be such that poly-silicon is deposited on the first silicon layer SB. The second silicon layer (PS) makes it possible to form the above-mentioned chamber 2 when the processing is completed. The thicknesses of the body portion 21 and the discharge portion 22 are set by the thickness of the second silicon layer PS to be laminated. At this time, the second silicon layer PS forms a step by the oxide film layer TO. A slit SP is easily formed in the discharging portion 22 and is formed on the oxide layer TO remaining to control the droplet size when the ink is discharged. The second silicon layer PS can form a step.

In the first method, the thicknesses of the body portion 21 and the discharging portion 22 formed by the second silicon layer PS may each be about 4 micrometers. However, the thickness of the body portion 21 is not limited to this, and may be changed depending on the thickness of the wafer to be provided. The body portion 21 and the discharge portion 22 are prevented from being damaged by the electrostatic force when an electrostatic force is generated through the conductive layer CR to be laminated.

The conductive layer CR may be formed of a conductive material for imparting electric charge to the ink by an applied power source, and may be laminated on the second silicon layer PS. Here, the conductive layer CR may be formed of one of materials having various known conductive properties. In the first method, the conductive layer (CR) may be formed of lithium tin oxide (LTO). The conductive layer CR deposited on the second silicon layer PS through the base forming step S3 forms the conductive film 3 described above. In the base forming step S3, the conductive layer CR is laminated on the second silicon layer PS so that a conductive film can be formed on both the body part 21 and the discharging part 22.

In the first method, the thickness of the conductive film 3 may be about 0.8 micrometer. Here, the thickness of the conductive film 3 is not limited to this, and it is sufficient that electric charges can be easily applied to the ink by an applied power source. Here, when the conductive film 3 is formed in the discharge portion 22, the thickness t of the discharge portion 22 may include the thickness of the conductive film 3.

Referring to FIG. 7, the first slit forming step S4 includes forming a conductive layer CR such that a supply portion SU and a first slit portion SP1 are formed in the conductive layer CR after the base forming step S3, Lt; / RTI > At this time, the first slit forming step S4 may form the supply part SU and the first slit part SP1 by one of various known removing methods. In the first method, a supply portion SU and a first slit portion SP1 can be formed in the conductive layer CR by dry etching using a laser. The supply portion SU and the first slit portion SP1 formed in the conductive layer CR through the first slit forming step S4 are formed in the first conductive portion 9 as shown in Figure 8B, A slit SP formed in the supply hole 33 and the second conductive portion 32 is formed.

In the first method, the width W1 of the slit SP formed in the second conductive portion 32 may be about 1 micrometer. However, the width W1 of the slit SP is not limited to this, and the width W1 of the slit SP can be adjusted in consideration of the viscosity of the supplied ink or the size of the droplet when the ink is discharged.

Referring to FIG. 8, in the second slit forming step S5, after the first slit forming step S4, the accommodating part AP and the second slit part SP2 are formed in the second silicon layer PS A portion of the second silicon layer (PS) is removed. At this time, the second slit forming step S5 may form the receiving part AP and the second slit part SP2 by one of various known removing methods. In the first method, the accommodating part AP and the second slit part SP2 can be formed in the second silicon layer PS through reactive ion etching (RIE). The receiving portion AP and the second slit portion SP2 formed in the second silicon layer PS through the second slit forming step S5 as shown in Figure 8 (b) The slit SP formed in the receiving groove 23 and the discharging portion 22 is formed. In view of the characteristics of the second slit forming step S5, the accommodating part AP is formed at the part where the supply part SU is formed, and the second slit part SP2 is formed at the part where the first slit part SP1 is formed Is formed.

In the first method, the width W1 of the slit SP formed in the discharge portion 22 may be about 1 micrometer. However, the width W1 of the slit SP is not limited to this, and the width W1 of the slit SP can be adjusted in consideration of the viscosity of the supplied ink or the size of the droplet when the ink is discharged.

Referring to FIG. 9, the corrosion step S6 removes the remaining oxide layer TO. The erosion step S6 may be performed after either the base forming step S3, the first slit forming step S4, or the second slit forming step S5. At this time, the corrosion step (S6) can remove the remaining oxide layer (TO) by one of various known removal methods. In the first method, the remaining oxide layer (TO) can be removed using a fluoric acid diluent, which is a metal detergent. Here, a solution of hydrofluoric acid (HF) and water (H2O) in a 1: 1 ratio may be used. The hydrofluoric acid diluent produces water by removing the oxide film layer (TO) (reaction formula: 4HF + SiO 2 -> SiF 4 + 2H 2 O)

As the remaining oxide layer TO is removed, a gap GAP is formed between the first silicon layer SB and the second silicon layer PS.

10, the nozzle tip forming step S7 may include forming the second silicon layer PS and the conductive layer CR such that the width is narrowed at the end portions of the first slit portion SP1 or the second slit portion SP2, Lt; / RTI > The nozzle tip forming step S7 is performed after either the base forming step S3, the first slit forming step S4, the second slit forming step S5, or the etching step S6 . At this time, the nozzle tip forming step S7 may be performed by narrowing the width of the end portion of the first slit portion SP1 or the second slit portion SP2 by one of various known removal methods. In the first method, the width of the end portion of the first slit portion SP1 or the second slit portion SP2 can be narrowed by using a focused ion beam (FIB). A portion of the second silicon layer PS and the conductive layer CR is removed through the nozzle tip forming step S7 to form the inclined surfaces in the discharge portion 22 and the second conductive portion 32 described above.

The width W2 of the discharge portion 22 at the end of the first slit portion SP1 or the second slit portion SP2 in the first method is equal to or larger than the width W1 of the formed slit SP, Is formed to be equal to or smaller than the thickness (t) of the base plate (22). Here, when the conductive film 3 is formed on the discharge portion 22, the thickness t of the discharge portion 22 may include the thickness of the conductive film 3.

Here, in the case where the slit nozzle is manufactured by the first method, it may further include a conductive film processing step (S3-1). The conductive film processing step S3-1 may include a conductive layer CR stacked on the second silicon layer PS so that the conductive film 3 can be formed on either the body 21 or the discharge part 22. [ Lt; / RTI > The conductive film processing step S3-1 may be performed after the base forming step S3.

Then, in the first slit forming step S4, either the supplying part SU or the first slit part SP1 is formed in accordance with the conductive layer CR removed through the conductive film processing step S3-1 . In other words, in the first slit forming step S4, when the conductive layer CR is formed on the body portion 21 in accordance with the conductive film processing step S3-1, the supply part SU is formed on the conductive layer CR And the first slit portion SP1 is formed in the conductive layer CR when the conductive layer CR is formed in the discharge portion 22. [ In the second slit forming step S5, both the accommodating part AP and the second slit part SP2 are formed.

Further, when the slit nozzle is manufactured by the first method, it may further include a chamber forming step (S3-2). Referring to FIG. 10, the chamber forming step S3-2 cuts the first silicon layer SB so as to be separated into individual nozzles. The chamber forming step S3-2 includes a base forming step S3, a conductive film processing step S3-1, a first slit forming step, a second slit forming step S5, a corrosion step S6, And a nozzle tip forming step (S7). The chamber forming step S3-2 may form a plurality of nozzles in one wafer.

The chamber forming step S3-2 may cut the first silicon layer SB corresponding to the gap GAP and cut the nozzle to show the planar shape of the nozzle according to the present invention.

Secondly, although not shown, the case where only the first silicon layer SB is used will be described. A method of manufacturing a slit-shaped nozzle in a second method includes a processing step S1-1, a base forming step S3, a first slit forming step S4, a second slit forming step S5, Forming step S7. The method may further include at least one of an inversion step (S1-2), a conductive film processing step (S3-1), and a chamber forming step (S3-2).

In the case of manufacturing the slit nozzle according to the second method, the first silicon layer SB may be composed of a wafer made of either silicon of poly-silicon or n-type single crystal silicon. In the second method, the first silicon layer SB may be formed of a wafer made of n-type single crystal silicon.

Processing step S1-1 adjusts the thickness of the provided first silicon layer SB. At this time, the first silicon layer SB can be controlled in thickness by one of various known etching methods, and the etching method is not limited thereto. The first silicon layer SB whose thickness has been adjusted through the processing step S1-1 can form the chamber 2 described above. Then, the thicknesses of the body portion 21 and the discharge portion 22 are set by adjusting the thickness of the first silicon layer SB through the processing step S1-1.

In the second method, the thicknesses of the body portion 21 and the discharge portion 22 may be about 4 micrometers, respectively. Also, the thickness of the body portion 21 may be about 300 micrometers, and the thickness of the discharge portion 22 may be about 4 micrometers. However, the thickness of the body portion 21 is not limited to this, and may be changed depending on the thickness of the wafer to be provided. When the electrostatic force is generated through the conductive layer CR to be laminated, the thicknesses of the body portion 21 and the discharge portion 22 can be set so as not to be damaged by the electrostatic force.

The slit SP is easily formed in the discharging portion 22 and the thickness of the body portion 21 is adjusted in order to adjust the size of the droplet when the ink is discharged. It is advantageous that the thickness of the discharge portion 22 is larger than that of the discharge portion 22.

In the base forming step S3, the conductive layer CR is laminated on the first silicon layer SB whose thickness has been adjusted through the processing step S1-1. At this time, the base forming step S3 may be laminated by one of various known deposition methods. In the second method, the conductive layer (CR) can be formed through low pressure chemical vapor deposition (LPCVD).

The conductive layer CR may be formed of a conductive material which imparts electric charge to the ink by an applied power source. Here, the conductive layer CR may be formed of one of materials having various known conductive properties. In the second method, the conductive layer (CR) may be formed of lithium tin oxide (LTO). The conductive layer CR deposited on the first silicon layer SB through the base forming step S3 forms the conductive film 3 described above. After the base forming step S3 is performed, the conductive film 3 can be formed on both the body 21 and the discharging portion 22. [

In the second method, the thickness of the conductive film 3 may be about 0.8 micrometer. Here, the thickness of the conductive film 3 is not limited to this, and it is sufficient that electric charges can be easily applied to the ink by an applied power source. Here, when the conductive film 3 is formed in the discharge portion 22, the thickness t of the discharge portion 22 may include the thickness of the conductive film 3.

In the first slit forming step S4, a part of the conductive layer CR is removed so that the supply part SU and the first slit part SP1 are formed in the conductive layer CR after the base forming step S3. At this time, the first slit forming step S4 may form the supply part SU and the first slit part SP1 by one of various known removing methods. In the second method, a supply portion SU and a first slit portion SP1 may be formed in the conductive layer CR by dry etching using a laser. The supply portion SU and the first slit portion SP1 formed in the conductive layer CR through the first slit forming step S4 are formed by the supply hole 33 formed in the first conductive portion 31 and the supply hole The slits SP formed in the conductive parts 32 are formed.

In the second method, the width W1 of the slit SP formed in the second conductive portion 32 may be about 1 micrometer. However, the width W1 of the slit SP is not limited to this, and the width W1 of the slit SP can be adjusted in consideration of the viscosity of the supplied ink or the size of the droplet when the ink is discharged.

In the second slit forming step S5, after the first slit forming step S4, the first silicon layer SB is formed with the first silicon layer SB so that the receiving portion AP and the second slit portion SP2 are formed. SB) is removed. At this time, the second slit forming step S5 may form the receiving part AP and the second slit part SP2 by one of various known removing methods. In the second method, the accommodating part AP and the second slit part SP2 may be formed in the first silicon layer SB through reactive ion etching (RIE). The receiving portion AP and the second slit portion SP2 formed in the first silicon layer SB through the second slit forming step S5 are formed by the receiving groove 23 formed in the body portion 21, Thereby forming a slit SP formed in the portion 22. In view of the characteristics of the second slit forming step S5, the accommodating part AP is formed at the part where the supply part SU is formed, and the second slit part SP2 is formed at the part where the first slit part SP1 is formed Is formed.

In the second method, the width W1 of the slit SP formed in the discharge portion 22 may be about 1 micrometer. However, the width W1 of the slit SP is not limited to this, and the width W1 of the slit SP can be adjusted in consideration of the viscosity of the supplied ink or the size of the droplet when the ink is discharged.

The nozzle tip forming step S7 removes a part of the first silicon layer SB and the conductive layer CR so that the width is narrowed at the end portions of the first slit portion SP1 or the second slit portion SP2. The nozzle tip forming step S7 may be performed after either the base forming step S3, the first slit forming step S4, or the second slit forming step S5. At this time, the nozzle tip forming step S7 may be performed by narrowing the width of the end portion of the first slit portion SP1 or the second slit portion SP2 by one of various known removal methods. In the second method, the width at the end of the second slit part SP2 can be narrowed by using a focused ion beam (FIB). The first silicon layer SB and the conductive layer CR are partially removed through the nozzle tip forming step S7 to form the inclined plane SL described above.

The width W2 of the discharge portion 22 at the end of the first slit portion SP1 or the second slit portion SP2 in the second method is equal to or larger than the width W1 of the formed slit SP, Is formed to be equal to or smaller than the thickness (t) of the base plate (22). Here, when the conductive film 3 is formed on the discharge portion 22, the thickness t of the discharge portion 22 may include the thickness of the conductive film 3.

Here, in the case where the slit nozzle is manufactured by the second method, it may further include an inversion step (S1-2). The inversion step S1-2 reverses the thickness-adjusted first silicon layer SB. The inversion step S1-2 may be performed after the machining step S1-1. The inversion step S1-2 is advantageously applied to a case where the thicknesses of the body 21 and the discharge part 22 are made different from each other in the first silicon layer SB whose thickness is controlled. Then, the accommodating part AP and the second slit part SP2 can be easily formed in the second slit forming step S5.

Further, in the case of manufacturing the slit nozzle in the second method, it may further include a conductive film treatment step (S3-1). The conductive film processing step S3-1 may include a conductive layer CR stacked on the first silicon layer SB so that the conductive film 3 may be formed on either the body part 21 or the discharge part 22. [ Lt; / RTI > The conductive film processing step S3-1 may be performed after the base forming step S3.

Then, in the first slit forming step S4, either the supplying part SU or the first slit part SP1 is formed in accordance with the conductive layer CR removed through the conductive film processing step S3-1 . In other words, in the first slit forming step S4, when the conductive layer CR is formed on the body portion 21 in accordance with the conductive film processing step S3-1, the supply part SU is formed on the conductive layer CR And the first slit portion SP1 is formed in the conductive layer CR when the conductive layer CR is formed in the discharge portion 22. [ In the second slit forming step S5, both the accommodating part AP and the second slit part SP2 are formed.

Further, when the slit nozzle is manufactured by the second method, it may further include a chamber forming step (S3-2). The chamber forming step S3-2 cuts the first silicon layer SB so as to be separated into individual nozzles. The chamber forming step S3-2 includes a base forming step S3, a conductive film processing step S3-1, a first slit forming step S4, a second slit forming step S5, Forming step S7, and the like. The chamber forming step S3-2 may form a plurality of nozzles in one wafer.

The chamber forming step S3-2 may cut the first silicon layer SB corresponding to the gap GAP and cut the nozzle to show the planar shape of the nozzle according to the present invention.

The scope of the present invention is not limited to the above-described embodiments, but may be embodied in various forms of embodiments within the scope of the appended claims. Without departing from the gist of the invention claimed in the claims, it is intended that any person skilled in the art to which the present invention pertains falls within the scope of the claims described in the present invention to various extents which can be modified.

1: Support body 2: Chamber 21: Body part
22: discharging portion 23: receiving groove 3: conductive film
31: first conductive portion 32: second conductive portion 33: supply hole
SP: slit SL: inclined surface TO: oxide film layer
SB: first silicon layer PR: photoresist PS: second silicon layer
CR: conductive layer SU: supply part SP1: first slit part
AP: receiving part SP2: second slit part GAP:
W1: width of slit W2: width of discharge portion t: thickness of discharge portion
S1: Oxidation film forming step S2: Etching step S3: Base forming step
S4: First slit forming step S5: Second slit forming step S6: Corrosion step
S7: nozzle tip forming step S7-1: chamber forming step S1-1: machining step
S1-2: Inversion Step S3-1: Conductive Film Treatment Step

Claims (11)

A chamber including a body portion having a receiving groove accommodating supplied ink, and a discharge portion extending from the body portion;
A conductive film coupled to the chamber to impart charge to the ink contained in the receiving groove by an applied power source; / RTI >
Slit nozzle, characterized in that the inclined surface is formed so that the discharge portion is communicated with the receiving groove and the ink is discharged is formed as well as the width becomes narrower toward the end of the slit. The method of claim 1,
Wherein the width of the discharge portion at the end of the slit is equal to or greater than the width of the slit and is equal to or less than the thickness of the discharge portion. The method of claim 1,
The chamber includes a support body coupled to support the body portion; Slit nozzle, characterized in that it further comprises. The method of claim 3,
The support body is a slit nozzle, characterized in that the extension is formed to be spaced apart from the discharge portion. 5. The method according to any one of claims 1 to 4,
The conductive film may include at least one conductive part selected from a first conductive part coupled to the body part and forming a supply hole communicating with the receiving groove, and a second conductive part coupled to the discharge part to form the slit Features a slit-shaped nozzle. A method of manufacturing a slit-type nozzle using a first silicon layer formed of any one of polycrystalline silicon and n-type single crystal silicon,
An oxide film forming step of applying heat to form an oxide film layer on the surface of the first silicon layer;
An etching step of removing a portion of the oxide layer after the oxide film forming step;
A base forming step of sequentially laminating a second silicon layer and a conductive layer on the first silicon layer after the etching step;
A first slit forming step of removing a portion of the conductive layer so as to form a supply part and a first slit part in the conductive layer after the base forming step;
A second slit forming step of removing a portion of the second silicon layer so that an accommodating part and a second slit part are formed in the second silicon layer after the first slit forming step;
A corrosion step of removing the remaining oxide layer after the base forming step;
A nozzle tip forming step of removing a portion of the second silicon layer and the conductive layer to narrow the width at an end of the first slit portion or the second slit portion after the base forming step; Method for producing a slit nozzle comprising. The method according to claim 6,
Wherein the second silicon layer is formed of one of polycrystalline silicon and n-type single crystal silicon. A method of manufacturing a slit-type nozzle using a first silicon layer formed of any one of polycrystalline silicon and n-type single crystal silicon,
A processing step of adjusting a thickness of the first silicon layer;
A base forming step of laminating a conductive layer on the first silicon layer after the processing step;
A first slit forming step of removing a portion of the conductive layer so as to form a supply part and a first slit part in the conductive layer after the base forming step;
A second slit forming step of removing a part of the first silicon layer after the first slit forming step, so that an accommodating part and a second slit part are formed in the first silicon layer;
A nozzle tip forming step of removing a portion of the first silicon layer and the conductive layer to narrow the width at an end of the first slit portion or the second slit portion after the base forming step; Wherein the slit-shaped nozzle has a slit-like shape. 9. The method of claim 8,
An inversion step of inverting the first silicon layer after the processing step; Further comprising the step of forming a slit-shaped nozzle. 10. The method according to any one of claims 6 to 9,
A conductive film treatment step of removing a portion of the conductive layer after the base forming step; Further comprising:
Wherein the first slit forming step forms one of the supply part and the first slit part according to the conductive layer removed through the conductive film processing step. 10. The method according to any one of claims 6 to 9,
After the base forming step, the chamber forming step of cutting the first silicon layer to be separated into a separate nozzle; Further comprising the step of forming a slit-shaped nozzle.

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