KR20120045539A - 발광소자 패키지 - Google Patents
발광소자 패키지 Download PDFInfo
- Publication number
- KR20120045539A KR20120045539A KR1020100107146A KR20100107146A KR20120045539A KR 20120045539 A KR20120045539 A KR 20120045539A KR 1020100107146 A KR1020100107146 A KR 1020100107146A KR 20100107146 A KR20100107146 A KR 20100107146A KR 20120045539 A KR20120045539 A KR 20120045539A
- Authority
- KR
- South Korea
- Prior art keywords
- light emitting
- emitting device
- device package
- light
- light source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- Led Device Packages (AREA)
- Planar Illumination Modules (AREA)
Abstract
Description
도 1b 는 실시예에 따른 발광소자 패키지의 구조를 도시한 단면도,
도 1c 내지 도 1e 는 제1 리드 프레임의 러프니스가 형성된 영역의 부분 사시도,
도 2a 는 실시예에 따른 발명소자 패키지를 도시한 단면도,
도 2b 내지 도 2d 는 제2 리드 프레임의 보조 격벽이 형성된 영역의 부분 단면도,
도 3a 및 도 3b 는 제2 리드 프레임의 보조 격벽이 형성된 영역의 부분 단면도,
도 4a 는 실시예에 따른 발광소자 패키지를 포함하는 조명장치를 도시한 사시도
도 4b 는 도 4a의 조명장치의 C-C' 단면을 도시한 단면도,
도 5 는 실시예에 따른 발광소자 패키지를 포함하는 액정표시장치의 분해 사시도, 그리고
도 6 은 실시예에 따른 발광소자 패키지를 포함하는 액정표시장치의 분해 사시도이다.
150 : 와이어 160 : 캐비티
170 : 러프니스 171: 돌출부
172: 홈부 180: 보조격벽
Claims (14)
- 캐비티 및 벽부를 포함한 몸체;
상기 몸체에 실장되는 제1 및 제2 리드 프레임; 및
상기 제1 및 제2 프레임과 전기적으로 연결되는 광원부;를 포함하고,
상기 제1 및 제2 리드 프레임 중 적어도 하나는 상기 광원부와 와이어 본딩되는 와이어 본딩영역을 포함하며 상기 와이어 본딩 영역에 러프니스가 형성되고,
상기 와이어 본딩 영역과 상기 광원부 사이에 형성된 보조격벽을 포함한 발광소자 패키지. - 제1항에 있어서,
상기 러프니스는 다수의 돌출부로 이루어지는 발광소자 패키지. - 제2항에 있어서,
상기 돌출부는 크기, 돌출 각도, 및 각각의 이격 거리 중 적어도 하나가 불균일하게 형성되는 발광소자 패키지. - 제1항에 있어서,
상기 러프니스는 다수의 홈부로 이루어지는 발광소자 패키지. - 제4항에 있어서,
상기 홈부는 깊이, 함몰 각도, 및 각각의 이격 거리 중 적어도 하나가 불균일하게 형성되는 발광소자 패키지. - 제1항에 있어서,
상기 러프니스가 형성된 영역의 면적은 상기 와이어 본딩 영역의 면적과 같거나 그보다 더욱 큰 발광소자 패키지. - 제1항에 있어서,
상기 보조격벽은 상기 제1 및 제2 리드 프레임 중 적어도 하나에 형성되는 발광소자 패키지. - 제1항에 있어서,
상기 보조격벽은 상기 몸체의 적어도 일 영역에 형성된 발광소자 패키지. - 제1항에 있어서,
상기 보조격벽은 상기 광원부의 높이보다 낮은 높이를 갖는 발광소자 패키지. - 제1항에 있어서,
상기 보조격벽은 적어도 일 영역에 형성된 경사면을 포함하는 발광소자 패키지. - 제11항에 있어서,
상기 경사면은 곡률을 갖는 발광소자 패키지. - 제1항에 있어서,
상기 보조격벽은 적어도 일 영역에 반사층을 포함하는 발광소자 패키지. - 제1항 내지 제12항 중 어느 한 항의 발광소자 패키지를 포함하는 조명장치.
- 제1항 내지 제12항 중 어느 한 항의 발광소자 패키지를 포함하는 백라이트 유닛.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100107146A KR20120045539A (ko) | 2010-10-29 | 2010-10-29 | 발광소자 패키지 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100107146A KR20120045539A (ko) | 2010-10-29 | 2010-10-29 | 발광소자 패키지 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20120045539A true KR20120045539A (ko) | 2012-05-09 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020100107146A Ceased KR20120045539A (ko) | 2010-10-29 | 2010-10-29 | 발광소자 패키지 |
Country Status (1)
Country | Link |
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KR (1) | KR20120045539A (ko) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150007735A (ko) * | 2013-07-12 | 2015-01-21 | 엘지이노텍 주식회사 | 발광소자 패키지 |
KR20170132932A (ko) * | 2016-05-24 | 2017-12-05 | 주식회사 세미콘라이트 | 반도체 발광소자 |
KR20170134816A (ko) * | 2016-05-26 | 2017-12-07 | 주식회사 세미콘라이트 | 반도체 발광소자 |
US10008648B2 (en) | 2015-10-08 | 2018-06-26 | Semicon Light Co., Ltd. | Semiconductor light emitting device |
US11038086B2 (en) | 2016-03-07 | 2021-06-15 | Semicon Light Co., Ltd. | Semiconductor light-emitting element and manufacturing method therefor |
-
2010
- 2010-10-29 KR KR1020100107146A patent/KR20120045539A/ko not_active Ceased
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150007735A (ko) * | 2013-07-12 | 2015-01-21 | 엘지이노텍 주식회사 | 발광소자 패키지 |
US10008648B2 (en) | 2015-10-08 | 2018-06-26 | Semicon Light Co., Ltd. | Semiconductor light emitting device |
US11038086B2 (en) | 2016-03-07 | 2021-06-15 | Semicon Light Co., Ltd. | Semiconductor light-emitting element and manufacturing method therefor |
KR20170132932A (ko) * | 2016-05-24 | 2017-12-05 | 주식회사 세미콘라이트 | 반도체 발광소자 |
KR20170134816A (ko) * | 2016-05-26 | 2017-12-07 | 주식회사 세미콘라이트 | 반도체 발광소자 |
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