KR20090061399A - Tft-lcd 글라스 에칭방법 - Google Patents
Tft-lcd 글라스 에칭방법 Download PDFInfo
- Publication number
- KR20090061399A KR20090061399A KR1020070128400A KR20070128400A KR20090061399A KR 20090061399 A KR20090061399 A KR 20090061399A KR 1020070128400 A KR1020070128400 A KR 1020070128400A KR 20070128400 A KR20070128400 A KR 20070128400A KR 20090061399 A KR20090061399 A KR 20090061399A
- Authority
- KR
- South Korea
- Prior art keywords
- etching
- tft
- glass
- cleaning
- lcd
- Prior art date
Links
- 238000005530 etching Methods 0.000 title claims abstract 29
- 238000000034 method Methods 0.000 title claims abstract 26
- 239000011521 glass Substances 0.000 title claims abstract 19
- 238000004140 cleaning Methods 0.000 claims abstract 8
- 238000005406 washing Methods 0.000 claims 2
- 239000000356 contaminant Substances 0.000 claims 1
- 238000006386 neutralization reaction Methods 0.000 claims 1
- 229910021642 ultra pure water Inorganic materials 0.000 claims 1
- 239000012498 ultrapure water Substances 0.000 claims 1
- 230000002950 deficient Effects 0.000 abstract 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Liquid Crystal (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Nonlinear Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
Abstract
Description
Claims (5)
- TFT-LCD 글라스 에칭 공정에 있어서,하나의 에칭장비 내에서 에칭용 글라스를 수직으로 세운 상태에서 에칭 전 세정과 에칭공정, 에칭 후 세정공정을 순차로 수행하는 것을 특징으로 하는 TFT-LCD 글라스 에칭 방법.
- 청구항 1에 있어서,상기 TFT-LCD 글라스 에칭 방법은,(1) 에칭용 글라스를 에칭장비 내로 수직반송하여 로딩하는 단계;(2) 상기 에칭용 글라스를 로딩함과 동시에 수직으로 세워진 상태에서 세정을 하는 단계;(3) 상기 세정 후 에칭하는 단계;(4) 상기 에칭공정 후 상기 글라스가 수직으로 세워진 상태에서 세정하는 단계;를 포함하여 이루어지는 것을 특징으로 하는 TFT-LCD 글라스 에칭 방법.
- 청구항 2에 있어서,상기 (2)단계는, 수직으로 세워진 블러쉬를 이용하여 오염물을 세정하여 제거하는 단계인 것을 특징으로 하는 TFT-LCD 글라스 에칭 방법.
- 청구항 3에 있어서,상기 (4)단계 이후에, 에칭공정에서의 에칭액을 제거하는 중화공정 (5)단계를 더 포함하는 것을 특징으로 하는 TFT-LCD 글라스 에칭 방법.
- 청구항 4에 있어서,상기 (5)단계 이후에,(6) 초 순수를 이용하여 상기 에칭된 글라스를 세정하는 단계;(7) 상기 에칭된 글라스를 언로딩하는 단계;를 더 포함하여 이루어지는 것을 특징으로 하는 TFT-LCD 글라스 에칭 방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070128400A KR20090061399A (ko) | 2007-12-11 | 2007-12-11 | Tft-lcd 글라스 에칭방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070128400A KR20090061399A (ko) | 2007-12-11 | 2007-12-11 | Tft-lcd 글라스 에칭방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20090061399A true KR20090061399A (ko) | 2009-06-16 |
Family
ID=40990872
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070128400A KR20090061399A (ko) | 2007-12-11 | 2007-12-11 | Tft-lcd 글라스 에칭방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR20090061399A (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110759643A (zh) * | 2019-12-06 | 2020-02-07 | 天津美泰真空技术有限公司 | 一种tft-lcd玻璃基板非对称减薄加工方法 |
CN115925272A (zh) * | 2022-12-07 | 2023-04-07 | 蚌埠中光电科技有限公司 | 一种用于tft-lcd玻璃基板研磨前的化学处理工艺 |
-
2007
- 2007-12-11 KR KR1020070128400A patent/KR20090061399A/ko not_active Application Discontinuation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110759643A (zh) * | 2019-12-06 | 2020-02-07 | 天津美泰真空技术有限公司 | 一种tft-lcd玻璃基板非对称减薄加工方法 |
CN110759643B (zh) * | 2019-12-06 | 2024-04-19 | 天津美泰真空技术有限公司 | 一种tft-lcd玻璃基板非对称减薄加工方法 |
CN115925272A (zh) * | 2022-12-07 | 2023-04-07 | 蚌埠中光电科技有限公司 | 一种用于tft-lcd玻璃基板研磨前的化学处理工艺 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11462423B2 (en) | Method and apparatus for cleaning semiconductor wafer | |
TW202044396A (zh) | 半導體矽晶圓之清洗處理裝置及清洗方法 | |
KR101206923B1 (ko) | 매엽식 웨이퍼 세정 장치 | |
JPH0227722A (ja) | 半導体製造用のウェーハ洗浄装置 | |
KR100794919B1 (ko) | 글라스 식각장치 및 식각방법 | |
KR20090061399A (ko) | Tft-lcd 글라스 에칭방법 | |
KR101008340B1 (ko) | 기판 세정 장치 및 방법 | |
JP2007052300A (ja) | マスク基板用の洗浄装置及びそれを用いたマスク基板の洗浄方法 | |
KR20160019857A (ko) | 공정 분리형 기판 처리장치 및 처리방법 | |
KR20090064114A (ko) | 웨이퍼카세트 보관장치 및 그 방법 | |
KR20180134502A (ko) | 기판처리장치 및 기판처리방법 | |
JP4766836B2 (ja) | フォトマスク基板の洗浄方法 | |
KR100912884B1 (ko) | Tft-lcd 글라스 에칭용 회전 롤 브러쉬와 이를이용한 에칭방법 | |
JP2001257256A (ja) | 保持カセット、保持ハンド、ウェット処理方法およびウェット処理装置 | |
JP2000208466A (ja) | 基板処理方法および基板処理装置 | |
JP5427876B2 (ja) | シリコンからなる半導体ウェハを半導体ウェハの研磨のプロセス直後に洗浄するための方法 | |
JP2005175036A (ja) | 基板処理装置 | |
TWI620237B (zh) | 整合水分去除與乾燥之處理設備及半導體晶圓之處理方法 | |
KR20050064377A (ko) | 버블판을 포함하는 식각장치 및 이를 이용한 식각 방법 | |
KR20100005758A (ko) | 반도체 기판의 습식세정장치 | |
KR20080088705A (ko) | 웨이퍼 가이드 및 그를 구비한 웨이퍼 세정장치 | |
CN115621117A (zh) | 一种腐蚀污迹片的挽救方法 | |
KR20090017037A (ko) | 매엽식 세정 장치 및 그 세정 방법 | |
JP6347875B2 (ja) | 基板処理システムおよび配管洗浄方法 | |
KR20060087203A (ko) | 세정 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20071211 |
|
PA0201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20090113 Patent event code: PE09021S01D |
|
PG1501 | Laying open of application | ||
E902 | Notification of reason for refusal | ||
PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20090729 Patent event code: PE09021S01D |
|
E601 | Decision to refuse application | ||
PE0601 | Decision on rejection of patent |
Patent event date: 20091022 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20090729 Comment text: Notification of reason for refusal Patent event code: PE06011S01I Patent event date: 20090113 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |