KR20060136217A - Thin film transistor substrate and method for manufacturing the same - Google Patents

Abstract

The thin film transistor substrate for preventing the reduction of the conductive oxide film containing indium oxide (In ₂ O ₃ ) is formed on the substrate, the gate wiring including a conductive layer and a conductive oxide film containing indium oxide (In ₂ O ₃ ). And a gate insulating film covering the gate wiring and including a transparent metal oxide insulating layer in contact with the conductive oxide film.

ITO, IZO, anti-reduction, anti-agglomeration, titanium oxide (TiO2)

Description

Thin film transistor substrate and method for manufacturing the same

1A is a layout view of a thin film transistor substrate according to an exemplary embodiment of the present invention.

FIG. 1B is a cross-sectional view taken along the line BB ′ of FIG. 1A.

2A, 3A, 4A, and 5A are layout views sequentially illustrating a method of manufacturing a thin film transistor substrate according to an exemplary embodiment of the present invention.

2B, 3B, 4B, and 5B through 5E are cross-sectional views taken along the line BB ′ of FIGS. 2A, 3A, 4A, and 5A, respectively.

6A is a layout view of a thin film transistor substrate according to another exemplary embodiment of the present invention.

FIG. 6B is a cross-sectional view taken along the line BB ′ of FIG. 6A.

7A, 9A, and 15A are layout views sequentially illustrating a method of manufacturing a thin film transistor substrate according to another exemplary embodiment of the present invention.

7B and 8 are cross-sectional views illustrating the process steps taken along the line BB ′ of FIG. 7A.

9B to 14 are cross-sectional views illustrating the process steps taken along the line BB ′ of FIG. 9A.

15B to 15E are cross-sectional views of the process steps taken along the line BB ′ of FIG. 15A.

<Explanation of symbols on main parts of the drawings>

10: insulating substrate 22: gate line

24: gate end 26: gate electrode

27: sustain electrode 28: sustain electrode line

30: gate insulating film 31: metal oxide insulating layer

32: silicon nitride insulating layer 40: semiconductor layer

55, 56: ohmic contact layer 62: data line

65 source electrode 66 drain electrode

67: drain electrode extension 68: data end

70: protective film 71: metal oxide insulating layer

72: silicon nitride insulating layer 82: pixel electrode

The present invention relates to a thin film transistor substrate and a method of manufacturing the same.

Specifically, the present invention relates to a thin film transistor substrate for preventing the reduction of a conductive oxide film containing indium oxide (In 2 O 3) and a method of manufacturing the same.

Liquid crystal display is one of the most widely used flat panel displays. It consists of two substrates on which electrodes are formed and a liquid crystal layer interposed therebetween. The display device controls the amount of light transmitted by applying and rearranging liquid crystal molecules of the liquid crystal layer.

The liquid crystal display has a thin film transistor substrate, a color filter substrate facing the thin film transistor substrate, and a liquid crystal interposed between both substrates to determine whether light is transmitted as an electrical signal is applied. The plurality of data lines and the gate lines intersect each other on the thin film transistor substrate, and the thin film transistor, which is a switching element, and the pixel electrode are formed in each crossing area.

On the other hand, as the liquid crystal display device becomes larger in size, the gate line and the data line connected to the thin film transistor also become longer, thereby increasing the resistance of the wiring. Therefore, in order to solve such problems as signal delay due to the increase in resistance, silver (Ag), copper (Cu), or the like is used as the material having the lowest specific resistance of the gate line and the data line.

In particular, silver (Ag) is generally difficult to control the process because the etching rate is too fast in the etching process. In addition, as the process temperature increases in a subsequent step after the formation of the gate wiring or the data wiring made of silver (Ag), the wiring of the silver (Ag) is broken by aggregation.

In order to solve this problem, silver (Ag) has a conductive oxide film including indium oxide (In 2 O 3), for example, indium tin oxide (ITO) or indium zinc oxide (IZO).

However, ITO or IZO is reduced in response to the hydrogen radicals generated in subsequent processes. This reduction causes ITO or IZO to lose the role of the protective layer of the silver (Ag) wiring, and the silver (Ag) wiring is disconnected.

An object of the present invention is to provide a thin film transistor substrate for preventing the reduction of the conductive oxide film containing indium oxide.

Another object of the present invention is to provide a method of manufacturing the same.

Technical problems of the present invention are not limited to the above-mentioned objects, and other technical problems not mentioned will be clearly understood by those skilled in the art from the following description.

A thin film transistor substrate according to an embodiment of the present invention for achieving the above technical problem is formed on the substrate, and covers the gate wiring and the gate wiring including a conductive layer including a conductive layer and indium oxide (In2O3). And a gate insulating film including a transparent metal oxide insulating layer in contact with the conductive oxide film.

A thin film transistor substrate according to another embodiment of the present invention for achieving the technical problem is formed on the substrate, a gate wiring including a conductive layer, is formed to insulate and cross the gate wiring on the substrate, the conductive layer And a protective film including a data wire including a conductive oxide film including indium oxide (In 2 O 3) and a transparent metal oxide insulating layer covering the data wire and in contact with the conductive oxide film.

According to another aspect of the present invention, there is provided a method of manufacturing a thin film transistor substrate, including: forming a gate wiring including a conductive layer and a conductive oxide layer including indium oxide (In 2 O 3) on the substrate; Forming a gate insulating film covering the gate wiring and including a transparent metal oxide insulating layer in contact with the conductive oxide film.

According to another aspect of the present invention, there is provided a method of fabricating a thin film transistor substrate, the method including: forming a gate wiring including a conductive layer on a substrate, and insulating and crossing the gate wiring on the substrate; Forming a data line including a conductive layer and a conductive oxide film including indium oxide (In 2 O 3); and a protective film covering the data line and including a transparent metal oxide insulating layer in contact with the conductive oxide film.

Specific details of other embodiments are included in the detailed description and the drawings.

Advantages and features of the present invention, and methods for achieving them will be apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms, and only the present embodiments are intended to complete the disclosure of the present invention, and the general knowledge in the art to which the present invention pertains. It is provided to fully convey the scope of the invention to those skilled in the art, and the present invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout.

Hereinafter, a thin film transistor substrate and a method of manufacturing the thin film transistor substrate according to embodiments of the present invention will be described in detail with reference to the accompanying drawings.

First, a structure of a thin film transistor substrate according to an exemplary embodiment of the present invention will be described with reference to FIGS. 1A and 1B. FIG. 1A is a layout view of a thin film transistor substrate according to an exemplary embodiment, and FIG. 1B is a cross-sectional view taken along the line BB ′ of FIG. 1A.

A plurality of gate wires 22, 24, 26, 27, and 28 for transmitting a gate signal are formed on the insulating substrate 10. The gate wires 22, 24, 26, 27, and 28 are connected to the ends of the gate line 22 and the gate line 22 extending in the horizontal direction, and receive gate signals from the outside and transfer them to the gate line. (24), the gate electrode 26 of the thin film transistor which is connected to the gate line 22 in the form of a projection, and the sustain electrode 27 and the sustain electrode line 28 formed in parallel with the gate line 22. . The storage electrode line 28 extends in the horizontal direction across the pixel region and is connected to the storage electrode 27 having a width wider than that of the storage electrode line 28. The storage electrode 27 overlaps with the drain electrode extension 67 connected to the pixel electrode 82, which will be described later, to form a storage capacitor that improves the charge storage capability of the pixel. Such shapes and arrangements of the storage electrode 27 and the storage electrode line 28 may be modified in various forms, and may not be formed when the storage capacitance generated by the overlap between the pixel electrode 82 and the gate line 22 is sufficient. It may not.

The gate wirings 22, 24, 26, 27, and 28 include lower conductive oxide films 221, 241, 261, and 271, conductive layers 222, 242, 262, and 272, and upper conductive oxide films 223, 243, 263, and 273. ). In addition, although not shown directly in the figure, the storage electrode line 28 also has the same triple film structure as the other gate wirings 22, 24, 26, and 27. The sustain electrode line 28 is also included in the gate wiring of the triple film structure demonstrated below.

Lower conductive oxide films 221, 241, 261, and 271 are formed on the insulating substrate 10, and the conductive layers 222, 242, 262, and 272 are prevented from being lifted from the insulating substrate 10. To improve adhesion to The lower conductive oxide films 221, 241, 261, and 271 may use transparent metal oxides used in the upper conductive oxide films 223, 243, 263, and 273. For example, ITO or IZO can be used.

The conductive layers 222, 242, 262, and 272 are formed on the lower conductive oxide films 221, 241, 261, and 271, and are made of silver (Ag), silver (Ag) alloy, copper (Cu), or aluminum ( Al) and the like. Hereinafter, the conductive layers 222, 242, 262, and 272 will be described using silver (Ag) or silver (Ag) alloy as an example.

The upper conductive oxide layers 223, 243, 263, and 273 are formed on the conductive layers 222, 242, 262, and 272, and control the etching rate of the conductive layers 222, 242, 262, and 272 during the etching process. In the subsequent process, it serves to prevent disconnection due to aggregation of the conductive layers 222, 242, 262 and 272 due to high temperature. As the upper conductive oxide films 223, 243, 263, and 273, an oxide film including indium oxide (In 2 O 3) may be used. Preferably, for example, tin (Sn) or zinc (Zn) is fixed to indium oxide (In 2 O 3). ITO or IZO doped in proportion may be used.

The gate insulating film 30 is formed on the substrate 10 and the gate wirings 22, 24, 26, 27, and 28.

The gate insulating layer 30 increases electron mobility in the channel of the thin film transistor and reduces leakage current to the outside. The gate insulating layer 30 includes a metal oxide insulating layer 31 and a silicon nitride insulating layer 32 covering the metal oxide insulating layer 31. The metal oxide insulating layer 31 is formed on the upper conductive oxide films 223, 243, 263, and 273 of the gate wirings 22, 24, 26, 27, and 28, and the hydrogen radicals and the upper conductive oxide film that are generated during subsequent processes. (223, 243, 263, 273) to prevent the reduction. The metal oxide insulating layer 31 may be, for example, titanium oxide (TiO 2), which is stable and transparent at the same time so as not to react with hydrogen radicals generated in a subsequent process. In addition, it is necessary to appropriately control the thickness of the metal oxide insulating layer 31 so that hydrogen radicals cannot penetrate the upper conductive oxide films 223, 243, 263, and 273. Preferably, the ratio of the thickness with the silicon nitride insulating layer 32 can be 1: 4 to 1: 3.

The silicon nitride insulating layer 32 is formed on the metal oxide insulating layer 31 and is made of silicon nitride (SiNx) or the like. The silicon nitride insulating layer 32 may be formed to have a component having a structure close to that of the hydrogenated amorphous silicon in order to reduce lattice mismatch with the semiconductor layer 40.

A semiconductor layer 40 made of a semiconductor such as hydrogenated amorphous silicon or polycrystalline silicon is formed in an island shape on the gate insulating layer 30 of the gate electrode 26, and silicide or n-type impurities are formed on the semiconductor layer 40. Resistive contact layers 55 and 56 made of a material such as heavily doped n + hydrogenated amorphous silicon are formed, respectively.

Data lines 62, 65, 66, 67, and 68 are formed on the ohmic contacts 55 and 56 and the gate insulating layer 30. The data lines 62, 65, 66, 67, and 68 are formed in the vertical direction and cross the gate line 22 to define the pixel and the branch of the data line 62 and the data line 62 to define a pixel. Is connected to one end of the source electrode 65 and the data line 62 extending to an upper portion of the data source, separated from the data end 68 and the source electrode 65 to which an image signal from the outside is applied, and the gate electrode 26. Or a wide area extending from the drain electrode 66 and the drain electrode 66 formed on the ohmic contact layer 56 opposite to the source electrode 65 with respect to the channel portion of the thin film transistor and overlapping the storage electrode 27. A drain electrode extension 67 of the area.

The data wires 62, 65, 66, 67, and 68 include lower conductive oxide films 621, 651, 661, 671, and 681, conductive layers 622, 652, 662, 672, and 682, and upper conductive oxide films 623 and 653. , 663, 673, 683). The structures and functions of the lower conductive oxide films 621, 651, 661, 671, 681, the conductive layers 622, 652, 662, 672, and 682 and the upper conductive oxide films 623, 653, 663, 673, and 683 are described above. Lower conductive oxide films 221, 241, 261, and 271, conductive layers 222, 242, 262, and 272 and conductive oxide films 223, 243, 263, and 273 of the gate wirings 22, 24, 26, 27, and 28. The structure and function of the same applies.

The source electrode 65 overlaps at least a portion of the semiconductor layer 40, and the drain electrode 66 faces the source electrode 65 around the gate electrode 26 and at least partially overlaps the semiconductor layer 40. do. Here, the ohmic contact layers 55 and 56 exist between the lower semiconductor layer 40 and the source electrode 65 and the drain electrode 66 thereon, and serve to lower the contact resistance.

The drain electrode extension 67 is formed to overlap the storage electrode 27, and a storage capacitor is formed with the storage electrode 27 and the gate insulating layer 30 interposed therebetween. When the sustain electrode 27 is not formed, the drain electrode extension 27 is also not formed. The passivation layer 70 is formed on the data wires 62, 65, 66, 67, and 68 and the semiconductor layer 40 not covered by the data lines 62.

The passivation layer 70 prevents corrosion of the data wires 62, 65, 66, 67, and 68 made of metal from the liquid crystal layer (not shown), and the upper conductivity of the data wires 62, 65, 66, 67, and 68. The reduction of the oxide films 623, 653, 663, 673, 683 is prevented. The protective film 70 includes a metal oxide insulating layer 71 and a silicon nitride insulating layer 72.

The metal oxide insulating layer 71 is formed on the data wirings 62, 65, 66, 67, and 68, and the function and the components of the metal oxide insulating layer 71 are the metal oxide insulating layer 31 of the gate insulating film 30. The same applies to the functions and components of

The silicon nitride insulating layer 72 prevents corrosion of the data lines 62, 65, 66, 67, and 68 from the liquid crystal layer (not shown), and may be formed of silicon nitride (SiNx), which is an inorganic material.

In the passivation layer 70, contact holes 77 and 78 exposing the drain electrode extension 67 and the data line end 68 are formed, respectively, and the passivation line 24 is formed in the passivation layer 70 and the gate insulating layer 30. The contact hole 74 exposing) is formed. The pixel electrode 82, which is electrically connected to the drain electrode 66 and positioned in the pixel, is formed on the passivation layer 70 through the contact hole 77. The pixel electrode 82 to which the data voltage is applied generates an electric field together with the common electrode of the upper panel to determine the arrangement of liquid crystal molecules of the liquid crystal layer between the pixel electrode 82 and the common electrode.

In addition, an auxiliary gate end 84 and an auxiliary data end 88 connected to the gate end 24 and the data end 68 are formed on the passivation layer 70 through the contact holes 74 and 78, respectively. The pixel electrode 82, the auxiliary gate, and the data ends 86 and 88 are made of ITO.

Hereinafter, a method of manufacturing a thin film transistor substrate according to an exemplary embodiment of the present invention will be described in detail with reference to FIGS. 1A and 1B and FIGS. 2A to 5E.

First, as shown in FIGS. 2A and 2B, conductive layers 222, 242, and 262 formed of a lower conductive oxide film 221, 241, 261, and 271, silver (Ag), or silver (Ag) alloy on the insulating substrate 10. , 272). Subsequently, ITO or IZO is laminated on the upper conductive oxide films 223, 243, 263 and 273 including indium oxide (In 2 O 3), for example, the upper conductive oxide films 223, 243, 263 and 273. The stacked lower conductive oxide films 221, 241, 261, and 271, the conductive layers 222, 242, 262, and 272 and the upper conductive oxide films 223, 243, 263, and 273 are photo-etched to form gate wirings 22, 24, 26, 27, 28). At this time, the etching process is a wet etching using an etching solution. Although not shown directly in the figure, the storage electrode lines 28 also form the same triple film structure as the other gate wirings 22, 24, 26, and 27. The sustain electrode line 28 is also included in the gate wiring of the triple film structure demonstrated below.

Thus, as shown in FIGS. 2A and 2B, the gate wirings 22 and 24 including the gate line 22, the gate electrode 26, the gate end 24, the storage electrode 27, and the storage electrode line 28 are provided. , 26, 27, 28) are formed.

Next, as shown in FIGS. 3A and 3B, the gate insulating film 30 including the metal oxide insulating layer 31 and the silicon nitride insulating layer 32 is laminated.

Lamination of the metal oxide insulating layer 31 uses reactive ion sputtering. Oxygen gas is injected at the beginning of the process of laminating the metal oxide insulating layer 31 using a transparent metal oxide, for example, a titanium (Ti) target, and then titanium oxide (TiO 2) is deposited through reactive ion sputtering. At this time, the metal oxide insulating layer 31 is laminated so that the ratio of the thickness of the metal oxide insulating layer 31 and the silicon nitride insulating layer 32 is 1: 4 to 1: 3.

Subsequently, the silicon nitride insulating layer 32 is deposited on the metal oxide insulating layer 31 by chemical vapor deposition, and the thickness thereof is 1,500 kPa to 5,000 kPa.

Subsequently, an intrinsic amorphous silicon layer and an amorphous silicon layer doped with impurities are continuously deposited to a thickness of 500 kPa to 2,000 kPa and 300 kPa to 600 kPa, respectively, for example, by chemical vapor deposition, and the intrinsic amorphous silicon layer and the doped amorphous silicon layer are Photo etching is performed to form an island-like semiconductor layer 40 and an ohmic contact layer 50 on the gate insulating layer 30 on the gate electrode 24.

4A and 4B, the lower conductive oxide films 621, 651, 661, on the gate insulating film 30, the exposed semiconductor layer 40, and the ohmic contact layers 55, 56, are sputtered or the like. 671, 681, upper conductive oxide films 623, 653, 663, 673 including conductive layers 622, 652, 662, 672, 682 made of silver (Ag) or silver (Ag) alloys and indium oxide (In2O3). , 683 are sequentially stacked and photo-etched to form data lines 62, 65, 66, 67, and 68.

As the method for forming the data lines 62, 65, 66, 67, and 68, the above-described method for forming the gate lines 22, 24, 26, 27, and 28 is applied.

As a result, the data line 62 and the data line 62 intersecting the gate line 22 are connected to one end of the source electrode 65 and the data line 62 extending to the upper portion of the gate electrode 26. The data end 68, which is separated from the source electrode 65, extends from the drain electrode 66 and the drain electrode 66 facing the source electrode 65 with respect to the gate electrode 26. ), Data lines 62, 65, 66, 67, and 68 including a large area drain electrode extension 67 are formed.

Next, the doped amorphous silicon layer not covered by the data lines 62, 65, 66, 67, and 68 is etched to move the data lines 62, 65, 66, 67, and 68 to both sides of the gate electrode 26. While separating, the semiconductor layer 40 between the ohmic contact layers 55 and 56 is exposed. At this time, in order to stabilize the surface of the exposed semiconductor layer 40, it is preferable to perform an oxygen plasma.

5A and 5E, the protective film 70 is formed by laminating the metal oxide insulating layer 71 and the silicon nitride insulating layer 72.

As the method of forming the metal oxide insulating layer 71, the method of forming the metal oxide insulating layer 31 of the gate insulating film 30 described above is applied.

Subsequently, the silicon nitride insulating layer 72 is formed of silicon nitride (SiNx), which is an inorganic material, by chemical vapor deposition.

Subsequently, the passivation layer 70 is patterned together with the gate insulating layer 30 by a photolithography process, thereby contact holes 74, 77, and 78 exposing the gate end 24, the drain electrode extension 67, and the data end 68. ).

In this case, the etching process is performed by dry etching on the gate insulating layer 30 and the passivation layer 70. However, the etching gas used may be different in the etching of the metal oxide insulating layers 31 and 71 and the silicon nitride insulating layers 32 and 72. In this case, the etching process may be performed by continuously supplying the etching gas, respectively, or at the same time by supplying the etching gas, respectively, but is not limited thereto. Gases used in the silicon nitride insulating layers 32 and 72 may be fluorine-based gas and oxygen gas.

However, since the etching is no longer performed with the above-described gas in the metal oxide insulating layers 31 and 71 made of titanium oxide (TiO 2), the gas used in the metal oxide insulating layers 31 and 71 may be chlorine gas.

As shown in FIGS. 5B to 5E, the forming of the contact holes 77 and 78 exposing the drain electrode extension 67 and the data end 68 may be performed using the etching gas described above in two steps 77b. , 78b, 77, 78). Meanwhile, the forming of the contact hole 74 exposing the gate end 74 may include silicon nitride insulating layers 32 and 72 and metal oxide insulating layers 31 and 71 formed on the gate insulating layer 30 and the passivation layer 70. In each case, the etching gas is used in four steps (74b, 74c, 74d, 74).

Subsequently, as shown in FIGS. 1A and 1B, the pixel electrode 82 and the contact holes 74 and 78, which are connected to the drain electrode 66 through the contact hole 77 by depositing and etching the ITO film, are formed. The auxiliary gate end 84 and the auxiliary data end 88 connected to the gate end 24 and the data end 68 are respectively formed.

In the above, the manufacturing method of the thin film transistor substrate for forming the semiconductor layer and the data wiring by the photolithography process using different masks has been described. However, the thin film transistor substrate for forming the semiconductor layer and the data wiring by the photolithography process using one photosensitive film pattern. The same applies to the manufacturing method of. This will be described in detail with reference to the drawings.

First, a unit pixel structure of a thin film transistor substrate according to another exemplary embodiment of the present invention will be described in detail with reference to FIGS. 6A and 6B.

6A is a layout view of a thin film transistor substrate according to another exemplary embodiment. FIG. 6B is a cross-sectional view taken along the line BB ′ of FIG. 6A.

First, a plurality of gate wires for transmitting a gate signal are formed on the insulating substrate 10 as in the exemplary embodiment of the present invention. The gate wires 22, 24, 26, 27, and 28 are connected to the ends of the gate line 22 and the gate line 22 extending in the horizontal direction, and receive gate signals from the outside and transfer them to the gate line. 24, a gate electrode 26 of the thin film transistor connected to the gate line 22 and formed in the shape of a protrusion, a storage electrode 27 and a storage electrode line 28 formed in parallel with the gate line 22. . The storage electrode line 28 extends in the horizontal direction across the pixel region and is connected to the storage electrode 27 having a width wider than that of the storage electrode line 28. The storage electrode 27 overlaps with the drain electrode extension 67 connected to the pixel electrode 82, which will be described later, to form a storage capacitor that improves the charge storage capability of the pixel. The shape and arrangement of the storage electrode 27 and the storage electrode line 28 may be modified in various forms, and may not be formed when the storage capacitance generated by the overlap between the pixel electrode 82 and the gate line 22 is sufficient. It may not.

The gate wirings 22, 24, 26, 27, and 28 include lower conductive oxide films 221, 241, 261, and 271, conductive layers 222, 242, 262, and 272, and upper conductive oxide films 223, 243, 263, and 273. ). The structures and functions of the lower conductive oxide films 221, 241, 261, and 271, the conductive layers 222, 242, 262, and 272 and the upper conductive oxide films 223, 243, 263, and 273 are described in the above-described embodiments of the present invention. In the thin film transistor substrate according to the example, the lower conductive oxide films 221, 241, 261, and 271, the conductive layers 222, 242, 262, and 272 of the gate wirings 22, 24, 26, 27, and 28, and the upper conductive oxide films ( The structures and functions of 223, 243, 263 and 273 apply equally.

A gate insulating film 30 is formed on the substrate 10 and the gate wirings 22, 24, 26, 27, and 28, and the gate insulating film 30 includes the metal oxide insulating layer 31 and the silicon nitride insulating layer 32. Include. Herein, the structures, functions, and components of the metal oxide insulating layer 31 and the silicon nitride insulating layer 32 may be described as the metal oxide insulating layer 31 of the gate insulating layer 30 in the thin film transistor substrate according to the exemplary embodiment described above. The structure, function, and component of the silicon nitride insulating layer 32 are equally applied.

On the gate insulating film 30, semiconductor patterns 42, 44 and 48 made of semiconductors such as hydrogenated amorphous silicon or polycrystalline silicon are formed, and n-type impurities such as silicide are formed on the semiconductor patterns 42, 44 and 48. Resistive contact layers 52, 55, 56 and 58 made of a material such as highly doped n + hydrogenated amorphous silicon are formed.

Data wires 62, 65, 66, 67, and 68 are formed on the ohmic contacts 52, 55, 56, and 58. The data lines 62, 65, 66, 67, and 68 are formed in the vertical direction and cross the gate line 22 to define the pixel and the branch of the data line 62 and the data line 62 to define a pixel. Is connected to one end of the source electrode 65 and the data line 62 extending to an upper portion of the data source, separated from the data end 68 and the source electrode 65 to which an image signal from the outside is applied, and the gate electrode 26. Or a wide area extending from the drain electrode 66 and the drain electrode 66 formed on the ohmic contact layer 56 opposite to the source electrode 65 with respect to the channel portion of the thin film transistor and overlapping the storage electrode 27. A drain electrode extension 67 of the area.

The data lines 62, 65, 66, 67, and 68 may include the lower conductive oxide films 621, 651, 661, 671, and 681, the conductive layers 622, 652, 662, 672, and 682, and the upper conductive oxide film 623. 653, 663, 673, 683). The structures and functions of the lower conductive oxide films 621, 651, 661, 671, 681, the conductive layers 622, 652, 662, 672, and 682 and the upper conductive oxide films 623, 653, 663, 673, and 683 are described above. The lower conductive oxide layers 621, 651, 661, 671, 681, and conductive layers 622, 652, and 662 of the data lines 62, 65, 66, 67, and 68 of the thin film transistor substrate according to the exemplary embodiment of the present invention. , 672, 682 and the upper conductive oxide films 623, 653, 663, 673, 683 are equally applicable.

The source electrode 65 overlaps at least a portion of the semiconductor layer 40, and the drain electrode 66 faces the source electrode 65 around the gate electrode 26 and at least partially overlaps the semiconductor layer 40. do. Here, the ohmic contacts 55 and 56 exist between the lower semiconductor layer 40 and the source electrode 65 and the drain electrode 66 above and serve to lower the contact resistance.

The drain electrode extension 67 is formed to overlap the storage electrode 27, and a storage capacitor is formed with the storage electrode 27 and the gate insulating layer 30 interposed therebetween. When the sustain electrode 27 is not formed, the drain electrode extension 27 is also not formed.

The ohmic contacts 52, 55, 56, and 58 serve to lower the contact resistance between the semiconductor patterns 42, 44, and 48 at the bottom thereof and the data lines 62, 65, 66, 67, and 68 at the top thereof. And has the same shape as the data lines 62, 65, 66, 67, and 68.

Meanwhile, the semiconductor patterns 42, 44, and 48 have the same shape as the data wires 62, 65, 66, 67, and 68 and the ohmic contact layers 52, 55, 56, and 58 except for the channel portion of the thin film transistor. have. That is, the source electrode 65 and the drain electrode 66 are separated from the channel portion of the thin film transistor, and the ohmic contact layer 55 under the source electrode 65 and the ohmic contact layer 56 under the drain electrode 66 are separated. Although also separated, the semiconductor pattern 44 for the thin film transistor is connected here without disconnection to create a channel of the thin film transistor.

The passivation layer 70 is formed on the data wires 62, 65, 66, 67, and 68 and the semiconductor pattern 44 which is not covered by the data lines 62.

The passivation layer 70 includes a metal oxide insulating layer 71 and a silicon nitride insulating layer 72.

Herein, structures, functions, and components of the metal oxide insulating layer 71 and the silicon nitride insulating layer 72 may include the metal oxide insulating layer 71 of the passivation layer 70 of the thin film transistor substrate according to the exemplary embodiment of the present invention described above. The silicon nitride insulating layer 72 structure, function, and components are equally applied.

In the passivation layer 70, contact holes 77 and 78 exposing the drain electrode extension 67 and the data line end 68 are formed, respectively, and the passivation line 24 is formed in the passivation layer 70 and the gate insulating layer 30. ), A contact hole 74 is formed.

In addition, an auxiliary gate end 84 and an auxiliary data end 88 connected to the gate end 24 and the data end 68 are formed on the passivation layer 70 through the contact holes 74 and 78, respectively. The pixel electrode 82, the auxiliary gate, and the data ends 86 and 88 are made of ITO.

Hereinafter, a method of manufacturing a thin film transistor substrate according to still another embodiment of the present invention will be described with reference to FIGS. 6A and 6B and FIGS. 7A to 15E.

First, as shown in FIGS. 7A and 7B, a conductive layer (222, 242) made of a lower conductive oxide film 221, 241, 261, 271, silver (Ag), or a silver (Ag) alloy on the insulating substrate 10 is formed. Upper conductive oxide films 223, 243, 263, and 273, including 262, 272, and indium oxide (In2O3), are then stacked on the lower conductive oxide films 221, 241, 261, and 271, and the conductive layer (222, The 242, 262, and 272 and the upper conductive oxide films 223, 243, 263, and 273 are photo-etched to form gate wirings 22, 24, 26, 27, and 28.

As a method of forming the gate wirings 22, 24, 26, 27, and 28, the method of forming the gate wirings in the method of manufacturing the thin film transistor substrate according to the exemplary embodiment described above is applied.

Thus, as shown in FIGS. 7A and 7B, gate wirings 22, 24, and 26 including the gate line 22, the gate electrode 26, the gate end 24, the storage electrode 27, and the storage electrode line 28 are provided. , 27, 28).

Next, as shown in FIG. 8, the gate insulating film 30 including the metal oxide insulating layer 31 and the silicon nitride insulating layer 32 is laminated. As such a method for forming the metal oxide insulating layer 31 and the silicon nitride insulating layer 32, the metal oxide insulating layer and the nitride of the gate insulating film in the method for manufacturing a thin film transistor substrate according to the embodiment of the present invention described above The method of forming a silicon insulation layer is applied.

Subsequently, the intrinsic amorphous silicon layer 40 and the doped amorphous silicon layer 50 are continuously deposited to a thickness of 1,500 kPa to 5,000 kPa, 500 kPa to 2,000 kPa, and 300 kPa to 600 kPa, for example, using chemical vapor deposition. Next, a lower conductive oxide film 601, a conductive layer 602 made of silver (Ag) or silver (Ag) alloy, and indium oxide (In2O3) are included on the doped amorphous silicon layer 50 by a sputtering method or the like. The upper conductive oxide film 603 is sequentially stacked.

Subsequently, an upper portion of the upper conductive oxide film 603 is coated with the photosensitive film 110.

Next, referring to FIGS. 9A and 9B, the photosensitive film 110 is irradiated with light through a mask and then developed to form photosensitive film patterns 112 and 114 as shown in FIG. 9B. In this case, among the photoresist patterns 112 and 114, the channel portion of the thin film transistor, that is, the first portion 114 positioned between the source electrode 65 and the drain electrode 66, is formed at the data wiring portion, that is, the portion where the data wiring is to be formed. The thickness of the second portion 112 is smaller than that of the positioned second portion 112, and all other portions of the photosensitive film except for the channel portion and the data wiring portion are removed. At this time, the ratio of the thickness of the photoresist film 114 remaining in the channel portion to the thickness of the photoresist film 112 remaining in the data wiring portion should be different according to the process conditions in the etching process, which will be described later. It is preferable to make the thickness of Pb be 1/2 or less of the thickness of the second part 112, for example, it is good that it is 4,000 kPa or less.

As such, there may be various methods of varying the thickness of the photoresist film according to the position. In order to control the amount of light transmission, a slit or lattice-shaped pattern is used or a translucent film is used.

In this case, it is preferable that the line width of the pattern located between the slits or the interval between the patterns, that is, the width of the slits, is smaller than the resolution of the exposure machine used for exposure. The thin film may have a thin film or a thin film having a different thickness.

When the light is irradiated to the photoresist film through such a mask, the polymers are completely decomposed at the part directly exposed to the light, but at the part where the slit pattern or the translucent film is formed, the polymer is not completely decomposed because the amount of light is small. In the area covered by, the polymer is hardly decomposed. Subsequently, when the photoresist film is developed, only a portion where the polymer molecules are not decomposed is left, and a thin photoresist film may be left at a portion where the light is not irradiated at a portion less irradiated with light. In this case, if the exposure time is extended, all molecules are decomposed, so it should not be so.

The thin film 114 is formed by using a photoresist film made of a reflowable material, and is exposed to a conventional mask that is divided into a part that can completely transmit light and a part that cannot fully transmit light, and then develops and ripples. It can also be formed by making a part of the photosensitive film flow to the part which is made low and the photosensitive film does not remain.

Subsequently, etching is performed on the photosensitive pattern 114 and the lower conductive oxide film 601, the conductive layer 602, and the upper conductive oxide film 603. The etching process is substantially the same as the data line etching process in the embodiment of FIGS. 4A and 4B.

In this way, as shown in FIG. 10, only the conductive layer patterns 62, 64, 67, and 68 of the channel portion and the data wiring portion remain, and the lower conductive oxide films 621, 641, 671, 681 except for the channel portion and the data wiring portion. ), Conductive layers 622, 642, 672, and 682 and upper conductive oxide films 623, 643, 673, and 683 are all removed to reveal the doped amorphous silicon layer 50 thereunder. In this case, the remaining conductive layer patterns 62, 64, 67, and 68 have the shape of the data wires 62, 65, 66, 67, and 68 except that the source and drain electrodes 65 and 66 are connected without being separated. Is the same as

Then, as shown in FIG. 11, the exposed doped amorphous silicon layer 50 and the intrinsic amorphous silicon layer 40 thereon except for the channel portion and the data wiring portion are formed with the first portion 114 of the photoresist film. It is removed simultaneously by dry etching method together. At this time, the etching is performed under the condition that the photoresist patterns 112 and 114, the doped amorphous silicon layer 50 and the intrinsic amorphous silicon layer 40 are simultaneously etched, and the gate insulating layer 30 is not etched. It is preferable to etch under the conditions in which the etching ratio with respect to (112, 114) and the intrinsic amorphous silicon layer 40 is about the same. For example, by using a mixed gas of SF6 and HCl or a mixed gas of SF6 and O2, the two films can be etched to almost the same thickness. When the etch ratios of the photoresist patterns 112 and 114 and the intrinsic amorphous silicon layer 40 are the same, the thickness of the first portion 114 is the sum of the thicknesses of the intrinsic amorphous silicon layer 40 and the doped amorphous silicon layer 50. It must be less than or equal to This removes the first portion 114 of the channel portion to reveal the triple layer pattern 64 for the source / drain, as shown in FIG. 15, and the doped amorphous silicon layer 50 and the intrinsic amorphous silicon of the other portions. The layer 40 is removed to reveal the gate insulating film 30 thereunder. On the other hand, since the second portion 112 of the data line portion is also etched, the thickness becomes thin.

Subsequently, ashing removes the photoresist residue remaining on the surface of the source / drain pattern 64 of the channel portion.

Next, as shown in FIG. 12, the conductive layer pattern 64 of the channel portion is etched and removed. The etching process is a wet etching using an etchant.

Subsequently, the ohmic contact layer 50 made of doped amorphous silicon is etched. Dry etching may be used at this time. Examples of the etching gas may include a mixed gas of CF 4 and HCl or a mixed gas of CF 4 and O 2, and using CF 4 and O 2 may leave a semiconductor pattern 44 made of intrinsic amorphous silicon in a uniform thickness. In this case, a portion of the semiconductor pattern 44 may be removed to reduce the thickness, and the second portion 112 of the photoresist pattern may also be etched to a certain thickness. At this time, the etching should be performed under the condition that the gate insulating film 30 is not etched. The photoresist film is not exposed so that the second portion 112 is etched so that the data lines 62, 65, 66, 67, and 68 underneath are not exposed. It is a matter of course that the pattern is thick.

In this way, the source electrode 65 and the drain electrode 66 are separated, thereby completing the data wirings 65 and 66 and the ohmic contacts 55 and 56 thereunder.

Subsequently, as shown in FIG. 13, the photosensitive film second portion 112 remaining in the data wiring portion is removed.

Subsequently, the protective film 70 is formed by laminating the metal oxide insulating layer 71 and the silicon nitride insulating layer 72 as shown in FIG. 14. As such a method for forming the metal oxide insulating layer 71 and the silicon nitride insulating layer 72, the metal oxide insulating layer of the protective film in the method for manufacturing a thin film transistor substrate according to an embodiment of the present invention as described above and The method of forming a silicon nitride insulating layer is applied.

Subsequently, as shown in FIGS. 15A to 15E, the passivation layer 70 is photo-etched together with the gate insulating layer 30 to expose the drain electrode extension 67, the gate end 24, and the data end 68, respectively. Contact holes 77, 74 and 78 are formed.

In this case, the etching process is performed by dry etching on the gate insulating layer 30 and the passivation layer 70. However, the etching gas used in the dry etching may be different in the etching of the metal oxide insulating layers 31 and 71 and the silicon nitride insulating layers 32 and 72. As such an etching process, an etching process in a method of manufacturing a thin film transistor substrate according to an embodiment of the present invention as described above is applied.

As shown in FIGS. 15B to 15E, the forming of the contact holes 74, 78, and 78 may be performed by a method of manufacturing a thin film transistor substrate according to an embodiment of the present invention when using an etching gas. do.

6A and 6B, an auxiliary gate connected to the pixel electrode 82 and the gate end 24 connected to the drain electrode extension 67 by depositing and photo-etching an ITO layer having a thickness of 400 μs to 500 μs is etched. An auxiliary data end 88 is formed that is connected to the end 84 and the data end 68.

On the other hand, it is preferable to use nitrogen as a gas used in the pre-heating process before laminating the ITO, which is the metal film (24, 67, 68) exposed through the contact holes (74, 77, 78) This is to prevent the metal oxide film from being formed on top of the.

In another embodiment of the present invention, the data wirings 62, 65, 66, 67, and 68 and the ohmic contact layers 52, 55, 56, and 58 and the semiconductors as well as the effects according to the embodiment of the present invention may be used. The manufacturing process may be simplified by forming the patterns 42 and 48 using one mask and separating the source electrode 65 and the drain electrode 66 in this process.

In the exemplary embodiment of the present invention, the gate wiring and the data wiring have been described as an example in which the triplet film is formed of the lower conductive oxide film, the conductive layer, and the upper conductive oxide film. Applicable In addition, although the example of the triple film which consists of a lower conductive oxide film, a conductive layer, and an upper conductive oxide film was mentioned with respect to the said gate wiring and a data wiring, the said conductive oxide film may be a multilayer film formed only in any one of the upper part and the lower part of a conductive layer.

In the embodiment of the present invention, an example in which the conductive layer is made of silver (Ag) or silver (Ag) alloy as the triple layer of the data wiring, and the lower conductive oxide film and the upper conductive oxide film are used as ITO or IZO has been described. However, in order for the lower conductive oxide film to reduce contact resistance with the ohmic contact layer, the conductive layer may be made of aluminum (Al), and the upper and lower conductive oxide films may be made of molybdenum (Mo). At this time, the metal oxide insulating layer of the protective film is not formed.

Although embodiments of the present invention have been described above with reference to the accompanying drawings, those skilled in the art to which the present invention pertains may implement the present invention in other specific forms without changing the technical spirit or essential features thereof. I can understand that. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive.

According to the method of manufacturing the thin film transistor substrate and the thin film transistor substrate of the present invention as described above has the following effects.

First, since titanium oxide (TiO 2) is formed on the conductive oxide film ITO or IZO, reaction with hydrogen radicals generated in a subsequent process does not occur, thereby reducing the reduction of ITO or IZO.

Second, titanium oxide (TiO 2) on the conductive oxide film ITO or IZO is prevented from reducing ITO or IZO in a subsequent process, thereby preventing disconnection of silver (Ag) wiring.

Claims (20)

A gate wiring formed on the substrate and including a conductive oxide film including a conductive layer and indium oxide (In 2 O 3); And And a gate insulating film covering the gate wiring and including a transparent metal oxide insulating layer in contact with the conductive oxide film. A gate wiring formed on the substrate and including a conductive layer; A data line formed on the substrate to be insulated from and cross the gate line, the data line including a conductive layer and a conductive oxide film including indium oxide (In 2 O 3); And And a passivation layer covering the data line and including a transparent metal oxide insulating layer in contact with the conductive oxide layer. The method according to claim 1 or 2, The metal oxide insulating layer is a thin film transistor substrate made of titanium oxide (TiO 2). The method according to claim 1 or 2, The conductive oxide film is a thin film transistor substrate of ITO or IZO. The method according to claim 1 or 2, The conductive layer is a thin film transistor substrate of silver (Ag) or silver alloy. The method of claim 1, The gate insulating film further includes a silicon nitride insulating layer covering the metal oxide insulating layer. The method of claim 2, The passivation layer further includes a silicon nitride insulating layer covering the metal oxide insulating layer. The method according to claim 6 or 7, The ratio of the thickness of the metal oxide insulating layer and the silicon nitride insulating layer covering the thin film transistor substrate is 1: 4 to 1: 3. Forming a gate wiring including a conductive layer and a conductive oxide film including indium oxide (In 2 O 3) on a substrate; Forming a gate insulating film covering the gate wiring and including a transparent metal oxide insulating layer in contact with the conductive oxide film. Forming a gate wiring including a conductive layer on the substrate; Forming a gate insulating film covering the gate wiring; Forming a data line on the substrate insulated from and intersecting the gate line, the data line including a conductive layer and a conductive oxide film including indium oxide (In 2 O 3); And forming a passivation layer covering the data line and including a transparent metal oxide insulating layer in contact with the conductive oxide layer. The method according to claim 9 or 10, The metal oxide insulating layer is a method of manufacturing a thin film transistor substrate made of titanium oxide (TiO2). The method according to claim 9 or 10, And the conductive oxide film is ITO or IZO. The method according to claim 9 or 10, And the conductive layer is silver (Ag) or a silver alloy. The method of claim 9, The forming of the gate insulating layer may further include forming a silicon nitride insulating layer covering the metal oxide insulating layer. The method of claim 10, The forming of the passivation layer may further include forming a silicon nitride insulating layer covering the metal oxide insulating layer. The method according to claim 14 or 15, And a ratio of the thickness of the metal oxide insulating layer and the silicon nitride insulating layer covering the metal oxide insulating layer is 1: 4 to 1: 3. The method of claim 15, And forming a contact hole in the gate insulating film and the protective film after the forming of the protective film. The method of claim 17, The forming of the contact hole may include performing a dry etching process using a gas different from each of the silicon nitride insulating layer and the metal oxide insulating layer. The method of claim 18, The etching gas used for the silicon nitride insulating layer in the forming of the contact hole includes a fluorine-based gas and oxygen. The method of claim 18, The etching gas used in the metal oxide insulating layer in the forming of the contact hole includes a chlorine (Cl 2) gas.

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