KR200248852Y1 - Apparatus for controlling a chamber gas pressure in a semiconductor processing unit - Google Patents
Apparatus for controlling a chamber gas pressure in a semiconductor processing unit Download PDFInfo
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- KR200248852Y1 KR200248852Y1 KR2020010018057U KR20010018057U KR200248852Y1 KR 200248852 Y1 KR200248852 Y1 KR 200248852Y1 KR 2020010018057 U KR2020010018057 U KR 2020010018057U KR 20010018057 U KR20010018057 U KR 20010018057U KR 200248852 Y1 KR200248852 Y1 KR 200248852Y1
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- chamber
- gas pressure
- mfc
- pressure regulating
- semiconductor manufacturing
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 239000007789 gas Substances 0.000 claims abstract description 29
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 28
- 230000001105 regulatory effect Effects 0.000 claims abstract description 15
- 229910052786 argon Inorganic materials 0.000 claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- 238000010926 purge Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052721 tungsten Inorganic materials 0.000 abstract description 2
- 239000010937 tungsten Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- Drying Of Semiconductors (AREA)
Abstract
반도체 제조 장비에서의 챔버 가스 압력 조절 장치를 개시한다.A chamber gas pressure regulating device in a semiconductor manufacturing equipment is disclosed.
본 고안은 챔버, MFC(Mass Flow Controller)로 이루어지는 반도체 제조 장비에서의 챔버 가스 압력 조절 장치에 있어서, 챔버와 MFC 간을 연결하는 가스 공급 라인 소정 위치에 가스 압력 조절 수단, 즉, 아르곤 퍼지 가스 압력 조절 밸브를 구비한다.The present invention relates to a chamber gas pressure regulating device in a semiconductor manufacturing equipment comprising a chamber and a mass flow controller (MFC), wherein the gas pressure regulating means, that is, argon purge gas pressure, is located at a predetermined position of a gas supply line connecting the chamber and the MFC. With a control valve.
따라서, 본 고안은 텅스텐 챔버의 에지 아르곤 압력을 조절함으로써 웨이퍼 에지 균일도를 향상시키고 장비 가동율을 증진시키는 효과가 있다.Therefore, the present invention has the effect of improving the wafer edge uniformity and equipment utilization rate by adjusting the edge argon pressure of the tungsten chamber.
Description
본 고안은 반도체 제조 장비에 관한 것으로, 특히, 반도체 제조 장비에서의 챔버 가스 압력 조절 장치에 관한 것이다.The present invention relates to semiconductor manufacturing equipment, and more particularly, to a chamber gas pressure regulating device in semiconductor manufacturing equipment.
일반적인 챔버에 있어서, 에지 아르곤 퍼지(purge) 가스는 웨이퍼 에지(edge) 및 챔버 배면에 텅스텐이 침착되는 것을 방지하기 위해 사용된다.In a typical chamber, edge argon purge gas is used to prevent the deposition of tungsten on the wafer edge and chamber back.
그러나, 이 챔버 내부에 이러한 아르곤 퍼지 가스의 압력을 조절할 수 있는 수단이 마련되지 않은 바, 웨이퍼 에지(edge)의 두께가 규정치를 벗어날 경우에 조치할 수 있는 방도가 없었다. 즉, 종래의 아르곤 에지 퍼지 방식은 MFC(Mass Flow Controller)에 의해 가스가 공급되는 방식으로서, 각 챔버별로 에지 퍼지 가스의 압력을 제어할 수 없다는 문제가 있었다.However, since there is no means for regulating the pressure of the argon purge gas inside the chamber, there is no way to take action when the thickness of the wafer edge is outside the prescribed value. That is, the conventional argon edge purge method is a method in which gas is supplied by a mass flow controller (MFC), and there is a problem that the pressure of the edge purge gas cannot be controlled for each chamber.
따라서, 본 고안은 상술한 문제를 해결하기 위해 안출한 것으로, 챔버 에지 부분의 압력을 조절할 수 있는 밸브를 설치하여 웨이퍼 에지 균일도(uniformity)를 향상시키도록 한 반도체 제조 장비에서의 챔버 가스 압력 조절 장치를 제공하는데 그 목적이 있다.Accordingly, the present invention has been made to solve the above-described problem, the chamber gas pressure control device in the semiconductor manufacturing equipment to improve the wafer edge uniformity by installing a valve that can adjust the pressure of the chamber edge portion The purpose is to provide.
이러한 목적을 달성하기 위하여 본 고안은, 챔버, MFC로 이루어지는 반도체 제조 장비에서의 챔버 가스 압력 조절 장치에 있어서, 챔버와 MFC 간을 연결하는 가스 공급 라인 소정 위치에 가스 압력 조절 수단을 구비하는 것을 특징으로 하는 반도체 제조 장비에서의 챔버 가스 압력 조절 장치를 제공한다.In order to achieve the above object, the present invention provides a chamber gas pressure regulating device in a semiconductor manufacturing equipment consisting of a chamber and an MFC, wherein the gas pressure adjusting means is provided at a predetermined position in a gas supply line connecting the chamber and the MFC. A chamber gas pressure regulating device in a semiconductor manufacturing equipment is provided.
도 1은 본 고안의 바람직한 실시예에 따른 반도체 제조 장비에서의 챔버 가스 압력 조절 장치의 구성도.1 is a block diagram of a chamber gas pressure regulating device in a semiconductor manufacturing equipment according to a preferred embodiment of the present invention.
<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>
10 : 챔버10: chamber
20 : 밸브20: valve
30 : MFC30: MFC
이하, 첨부된 도면을 참조하여 본 고안의 바람직한 실시예에 대하여 상세하게 설명한다.Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.
설명에 앞서, 본 고안의 핵심 기술 요지는, 반도체 제조 장비의 챔버와 MFC 간에 밸브를 설치하여 챔버 에지 압력을 각 챔버별로 조절할 수 있도록 하는 것을 그 특징으로 하며, 이러한 기술적 수단들로부터 본 고안의 목적으로 하는 바를 용이하게 달성할 수 있을 것이다.Prior to the description, the key technical gist of the present invention is to provide a valve between the chamber and the MFC of the semiconductor manufacturing equipment, characterized in that the chamber edge pressure can be adjusted for each chamber, and the purpose of the present invention from these technical means It will be easy to achieve what is meant by.
도 1은 본 고안의 바람직한 실시예에 따른 반도체 제조 장비에서의 챔버 가스 압력 조절 장치의 구성도로서, 챔버(10), 밸브(20), MFC(30)를 포함한다.1 is a configuration diagram of a chamber gas pressure regulating device in a semiconductor manufacturing apparatus according to a preferred embodiment of the present invention, which includes a chamber 10, a valve 20, and an MFC 30.
설명에 앞서, 본 고안에 적용되는 반도체 제조 장비의 구성, 즉, 챔버(10), MFC(30) 등은 통상의 반도체 제조 장비의 구성과 동일한 바, 구체적인 기능 설명은 생략하기로 한다.Prior to the description, the configuration of the semiconductor manufacturing equipment applied to the present invention, that is, the chamber 10, the MFC 30 and the like are the same as the configuration of the conventional semiconductor manufacturing equipment, a detailed description of the function will be omitted.
도시한 바와 같이, 본 고안에 따른 챔버 가스 압력 조절 장치는 챔버(10)와 MFC(30) 사이에 아르곤 퍼지 가스 압력 조절 밸브(20)를 장착한 구조로 이루어진다.As shown, the chamber gas pressure regulating device according to the present invention has a structure in which an argon purge gas pressure regulating valve 20 is mounted between the chamber 10 and the MFC 30.
즉, 외부 공급 라인을 통해 제공되는 아르곤 퍼지 가스는 MFC(30)로 공급되고, MFC(30)로 공급된 아르곤 퍼지 가스가 본 고안에 따른 아르곤 퍼지 가스 압력 조절 밸브(20)에 의해 소정 압력으로 조절되어 챔버(10)로 공급된다.That is, the argon purge gas provided through the external supply line is supplied to the MFC 30, and the argon purge gas supplied to the MFC 30 is supplied to the predetermined pressure by the argon purge gas pressure regulating valve 20 according to the present invention. It is regulated and supplied to the chamber 10.
즉, 아르곤 퍼지 가스 압력 조절 밸브(20)에 의해 외부 공급 라인, MFC(30)를 경유하여 제공되는 아르곤 퍼지 가스의 압력을 조절할 수 있는 것이다.That is, the pressure of the argon purge gas provided through the external supply line and the MFC 30 by the argon purge gas pressure control valve 20 can be adjusted.
따라서, 균일한 압력을 갖는 아르곤 퍼지 가스가 챔버(10)로 공급될 수 있다.Thus, argon purge gas having a uniform pressure can be supplied to the chamber 10.
이상, 본 고안을 실시예에 근거하여 구체적으로 설명하였지만, 본 고안은 이러한 실시예에 한정되는 것이 아니라, 그 요지를 벗어나지 않는 범위내에서 여러 가지 변형이 가능한 것은 물론이다.As mentioned above, although this invention was demonstrated concretely based on the Example, this invention is not limited to this Example, Of course, various deformation | transformation is possible in the range which does not deviate from the summary.
따라서, 본 고안은 챔버의 에지 아르곤 압력을 조절함으로써 웨이퍼 에지 균일도를 향상시키고 장비 가동율을 증진시키는 효과가 있다.Therefore, the present invention has the effect of improving the wafer edge uniformity and equipment utilization rate by adjusting the edge argon pressure of the chamber.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2020010018057U KR200248852Y1 (en) | 2001-06-16 | 2001-06-16 | Apparatus for controlling a chamber gas pressure in a semiconductor processing unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2020010018057U KR200248852Y1 (en) | 2001-06-16 | 2001-06-16 | Apparatus for controlling a chamber gas pressure in a semiconductor processing unit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR200248852Y1 true KR200248852Y1 (en) | 2001-11-16 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2020010018057U Expired - Fee Related KR200248852Y1 (en) | 2001-06-16 | 2001-06-16 | Apparatus for controlling a chamber gas pressure in a semiconductor processing unit |
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| Country | Link |
|---|---|
| KR (1) | KR200248852Y1 (en) |
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2001
- 2001-06-16 KR KR2020010018057U patent/KR200248852Y1/en not_active Expired - Fee Related
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