KR200153150Y1 - Flange for process chamber of semiconductor low pressure chemical vapor deposition equipment - Google Patents
Flange for process chamber of semiconductor low pressure chemical vapor deposition equipment Download PDFInfo
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- KR200153150Y1 KR200153150Y1 KR2019960016158U KR19960016158U KR200153150Y1 KR 200153150 Y1 KR200153150 Y1 KR 200153150Y1 KR 2019960016158 U KR2019960016158 U KR 2019960016158U KR 19960016158 U KR19960016158 U KR 19960016158U KR 200153150 Y1 KR200153150 Y1 KR 200153150Y1
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- flange
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- process chamber
- low pressure
- vapor deposition
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
저압화학기상증착 공정을 수행할 수 있도록 내·외측 튜브를 지지하는 반도체 저압화학기상증착 설비의 공정챔버용 플랜지에 관한 것이다.The present invention relates to a flange for a process chamber of a semiconductor low pressure chemical vapor deposition apparatus which supports an inner and an outer tube to perform a low pressure chemical vapor deposition process.
본 고안은 소정 직경을 갖는 관 형상으로 내벽 중심 부위를 따라 돌출 형성된 환형돌기가 형성되고, 상기 환형돌기의 하측 소정 부위에 요구되는 가스가 공급되도록 형성된 가스 주입구와 상기 환형돌기 상측 소정 부위에 공급된 잔량의 가스 및 반응 후 생성된 가스 등이 배출되는 가스 배출구가 형성된 반도체 저압화학기상증착 설비의 공정챔버용 플랜지에 있어서, 상기 환형돌기 상측 내벽에 소정 폭과 길이로 상기 가스 배출구와 부합되는 구멍을 갖는 커버판이 밀착 설치됨을 특징으로 한다.The present invention is a tubular shape having a predetermined diameter is formed in the annular projection protruding along the inner wall center portion, the gas injection port formed to supply the gas required to the lower predetermined portion of the annular projection and the upper portion of the annular projection is supplied A flange for a process chamber of a semiconductor low pressure chemical vapor deposition apparatus having a gas outlet through which a residual amount of gas and a gas generated after a reaction is discharged, wherein a hole corresponding to the gas outlet has a predetermined width and length in an upper inner wall of the annular protrusion. It is characterized in that the cover plate having a close installation.
따라서, 플랜지 부위에 증착되는 막질에 의한 웨이퍼의 손상이 없으며, 플랜지의 세정 시간이 단축될 뿐 아니라 플랜지의 부식됨을 줄이게 됨으로 플랜지의 수명을 연장하게 되는 효과가 있다.Therefore, there is no damage to the wafer due to the film quality deposited on the flange portion, and the cleaning time of the flange is shortened and the corrosion of the flange is reduced, thereby extending the life of the flange.
Description
제1도는 종래의 저압화학기상증착 설비의 공정챔버용 플랜지가 설치된 상태를 나타낸 단면도이다.1 is a cross-sectional view showing a state in which a flange for a process chamber of a conventional low pressure chemical vapor deposition installation is installed.
제2도는 제1도의 플랜지를 나타낸 사시도이다.2 is a perspective view showing the flange of FIG.
제3도는 본 고안에 따른 커버판이 설치된 저압화학기상증착 설비의 공정챔버용 플랜지를 나타낸 단면도이다.3 is a cross-sectional view showing a flange for the process chamber of the low pressure chemical vapor deposition equipment is installed cover plate according to the present invention.
제4도는 제3도의 커버판의 펼쳐진 상태를 나타낸 평면도이다.4 is a plan view showing the unfolded state of the cover plate of FIG.
제5도는 제4도의 커버판을 플랜지 소정 위치에 설치할 때의 상태를 나타낸 사시도이다.5 is a perspective view showing a state when the cover plate of FIG. 4 is installed at a flange predetermined position.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
10 : 공정챔버 12 : 외측 튜브10 process chamber 12 outer tube
14 : 내측 튜브 16,30 : 플랜지14: inner tube 16, 30: flange
18 : 웨이퍼 20 : 척조립체18: wafer 20: chuck assembly
22,32 : 환형돌기 24,34 : 가스 주입구22,32: annular protrusion 24,34: gas inlet
26,36 : 가스 배출구 28 : 보트26,36: gas outlet 28: boat
38 : 커버판 40 : 고정돌기38: cover plate 40: fixing protrusion
42 : 구멍42: hole
본 고안은 반도체 저압화학기상증착(Low Pressure Chemical Vapour Deposition:LPCVD) 설비의 공정챔버용 플랜지에 관한 것으로서, 보다 상세하게는 저압화학기상증착 공정을 수행할 수 있도록 내·외측 튜브를 지지하는 반도체 LPCVD 설비의 공정챔버용 플랜지에 관한 것이다.The present invention relates to a flange for a process chamber of a semiconductor Low Pressure Chemical Vapor Deposition (LPCVD) facility, and more specifically, a semiconductor LPCVD supporting an inner and an outer tube to perform a low pressure chemical vapor deposition process. It relates to a flange for a process chamber of a facility.
통상적으로 웨이퍼는 사진, 저압화학기상증착, 식각, 화학기상증착 및 금속배선 등의 공정이 반복 수행됨에 따라 반도체 장치로 제작되고, 이들 각 공정을 수행하는 제조설비는 공정에 필요한 특정한 상태를 설정하고 있다.In general, wafers are fabricated as semiconductor devices by repeating processes such as photographing, low pressure chemical vapor deposition, etching, chemical vapor deposition, and metallization, and the manufacturing equipment performing each of these processes sets a specific state required for the process. have.
이들 반도체소자 제조공정 중 빈번히 이루어지는 공정 중의 하나가 화학기상증착(Chemical Vapour Deposition:CVD) 공정이며, 상기 CVD 공정은 상압이나 저압 또는 플라즈마 등의 특정한 상태를 형성하고 있는 공정챔버 내부에 막의 재료가 되는 여러 가지 가스들을 공급하고, 이 가스로 하여금 웨이퍼의 표면상에 요구되는 재질의 막으로 형성시키는 공정이다.One of the processes frequently performed among these semiconductor device manufacturing processes is a chemical vapor deposition (CVD) process, and the CVD process is used as a film material in a process chamber in which a specific state such as atmospheric pressure, low pressure, or plasma is formed. It is a process of supplying various gases and forming this gas into a film of required material on the surface of the wafer.
상술한 CVD 공정 중 공정챔버 내부를 저압 상태로 형성하여 공정을 진행하게 되는 LPCVD 공정이 있으며, 이러한 LPCVD 공정을 수행하기 위한 공정챔버가 제1도에 도시되어 있다.Among the above-described CVD processes, there is an LPCVD process in which the process chamber is formed in a low pressure state to perform a process, and a process chamber for performing such an LPCVD process is shown in FIG. 1.
제1도를 참조하여 LPCVD 공정챔버(10)의 구성을 설명하면, 석영 재질로 제작된 외측 튜브(12)와 내측 튜브(14) 그리고, 상기 외측 튜브(12)와 내측 튜브(14)를 지지 고정하는 플랜지(16)가 제조설비(도시안됨) 소정 위치에 설치되어 있다.Referring to FIG. 1, the structure of the LPCVD process chamber 10 will be described. The outer tube 12 and the inner tube 14 made of quartz may be supported, and the outer tube 12 and the inner tube 14 may be supported. A flange 16 to be fixed is provided at a manufacturing facility (not shown) at a predetermined position.
또한, 이 플랜지(16)의 하측으로부터 다수개의 웨이퍼(18)를 장착한 척조립체(20)가 승강하여 상기 내측 튜브(14) 내부로 웨이퍼(18)를 투입하여 위치시킴과 동시에 척조립체(20)의 소정 부위가 플랜지(16)의 하단부와 밀착되어 소정의 밀폐된 공간을 이루게 됨에 따라 저압화학기상증착 공정을 수행하기 위한 공정챔버(10)를 형성하게 된다.In addition, the chuck assembly 20 having the plurality of wafers 18 mounted thereon is lifted from the lower side of the flange 16 to inject and position the wafer 18 into the inner tube 14. As a predetermined portion of) is in close contact with the lower end of the flange 16 to form a predetermined closed space to form a process chamber 10 for performing a low-pressure chemical vapor deposition process.
이렇게 사용되는 플랜지(16)에 대하여 제2도를 참조하여 보다 상세히 설명하면, 소정 직경을 갖는 관형상으로 금속 재질로 제작되어 있고, 플랜지(16)의 내측벽 중심 위치에 측벽을 따라 연장 돌출된 형상의 환형돌기(22)가 형성되어 있다.The flange 16 used in this way will be described in more detail with reference to FIG. 2, which is made of a metallic material in a tubular shape having a predetermined diameter and protrudes along the side wall at the center of the inner wall of the flange 16. The annular projection 22 of the shape is formed.
또한, 환형돌기(22)의 하측 소정 부위에 플랜지(16) 측벽을 관통하여 외측으로 돌출된 관 형상의 가스 주입구(24)가 형성되어 있고, 상기 환형돌기(22)의 상측 소정 부위에 플랜지(16) 측벽을 관통하여 외측으로 돌출된 관 형상의 가스 배출구(26)가 형성되어 있다.In addition, a tubular gas injection port 24 is formed at a lower predetermined portion of the annular protrusion 22 to protrude outwardly through the side wall of the flange 16. 16) The tubular gas outlet 26 which protrudes outward through the side wall is formed.
상기와 같이 형성된 플랜지(16)의 상단부에 외측 튜브(12)가 올려져 밀착 설치되고, 상기 내측 튜브(14)는 환형돌기(22) 상면에 올려져 밀착 설치되며, 플랜지(16)의 하측으로 다수개의 웨이퍼(18)를 장착한 척조립체(20)가 승강하여 상기 플랜지(16)의 하단부에 밀착 고정됨에 따라 저압화학기상증착 공정을 수행할 수 있는 하나의 공정챔버(10)를 이루게 된다.The outer tube 12 is raised and installed in close contact with the upper end of the flange 16 formed as described above, and the inner tube 14 is mounted on the upper surface of the annular protrusion 22 to be in close contact with each other. As the chuck assembly 20 having the plurality of wafers 18 mounted thereon is lifted and tightly fixed to the lower end of the flange 16, it forms one process chamber 10 capable of performing a low pressure chemical vapor deposition process.
이렇게 형성된 공정챔버(10)는 외부의 가스 배출수단의 구동으로 내부의 공기가 가스 배출구(26)를 통해 공정챔버(10) 밖으로 배출되며, 이에 따라 공정챔버(10) 내부는 저압 상태를 형성하게 된다.The process chamber 10 formed as described above is discharged out of the process chamber 10 through the gas outlet 26 by the driving of the gas discharge means, so that the inside of the process chamber 10 forms a low pressure state. do.
상술한 바와 같이 공정챔버 내부가 적정 수준의 저압 상태 및 기타의 조건을 이루게 되면 플랜지(16)에 형성된 가스 주입구(24)를 통해 요구되는 가스가 공급되며, 이렇게 공급된 가스는 공정챔버(10) 내부에 형성된 특정 상태에 의해 증착되는 막으로 성장하게 된다.As described above, when the inside of the process chamber achieves an appropriate low pressure state and other conditions, the required gas is supplied through the gas inlet 24 formed in the flange 16, and the supplied gas is supplied to the process chamber 10. It grows into a film deposited by a specific state formed therein.
그리고, 상기 잔량의 가스 또는 반응 후에 생성되는 가스 등은 가스 배출수단의 구동에 의한 진공압의 전달로 내측 튜브(14)와 외측 튜브(12) 사이로 이동하여 상기 가스 배출구(26)를 통해 공정챔버(10) 외부로 배출된다.In addition, the remaining amount of gas or gas generated after the reaction is moved between the inner tube 14 and the outer tube 12 by the transfer of the vacuum pressure by the driving of the gas discharge means, the process chamber through the gas outlet 26 (10) It is discharged to the outside.
여기서, 상기와 같이 공급된 가스는 공정챔버(10) 내부의 모든 표면에 대해 특별한 선택성을 갖지 않으며, 공정챔버(10) 내부의 내벽이나 웨이퍼(18)가 설치되는 보트(28) 또는 잔류 가스를 배출토록 하는 가스 배출구(26) 주연 등의 표면에 웨이퍼(18) 표면과 동일한 재질의 막질로 성장하게 된다.Here, the gas supplied as above does not have any special selectivity to all surfaces inside the process chamber 10, and the boat 28 or the residual gas on which the inner wall of the process chamber 10 or the wafer 18 is installed may be used. The film is grown on the surface of the gas outlet 26 and the like so as to be discharged into a film of the same material as the surface of the wafer 18.
특히, 반응이 이루어지는 공정챔버(10)의 하단부에 위치되어 반응 후에 생성되는 반응 폐기물을 배기토록 통로 역할을 하는 가스 배출구(26) 주연부위 즉, 플랜지(16)의 환형돌기(22) 상측 내벽은 웨이퍼(18)가 놓이는 부위에 비해 상대적으로 낮은 온도 상태를 유지하고 있어 상기 반응 폐기물 등은 온도 변화 등에 의해 환형돌기(22) 상측의 플랜지(16) 내벽 부위에 증착막이 두껍게 형성된다.In particular, the inner peripheral wall of the annular projection 22 of the periphery of the gas outlet 26 that is located at the lower end of the process chamber 10 where the reaction takes place and serves as a passage for exhausting the reaction waste generated after the reaction is formed. The temperature of the reaction waste is maintained relatively lower than that of the portion on which the wafer 18 is placed. Thus, the reaction waste is thickly formed on the inner wall of the flange 16 on the upper side of the annular protrusion 22 due to temperature change.
그러나, 상기와 같이 증착된 막질은 공정이 진행됨에 따라 계속적으로 적층되며, 이렇게 적층된 막질이 웨이퍼의 표면에 떨어지게 되면 웨이퍼에 손상을 주게 되어 수율을 저하시키는 문제점이 있었다.However, the film quality deposited as described above is continuously laminated as the process proceeds, and when the film quality thus deposited falls on the surface of the wafer, there is a problem of damaging the wafer and lowering the yield.
또한, 상기와 같이 증착된 막질을 제거하기 위해 세정 작업을 실시하게 되는데 증착되는 막질의 종류에 따라 쉽게 제거되지 않으며, 특정 약품을 사용하게 됨으로써 금속 재질의 플랜지는 부식되어 수명이 단축될 뿐 아니라 증착된 막질이 제거되지 않고 일부 남아 있게 되면 막질 사이에 잔존하게 되는 세정액이 공정챔버 내부에 투입된 가스와 반응하여 웨이퍼에 대한 불순물로 작용하게 되는 문제점이 있었다.In addition, the cleaning operation is performed to remove the deposited film quality as described above, which is not easily removed depending on the type of the deposited film quality, and by using a specific chemical, the flange of the metal material is corroded to shorten the lifespan and to be deposited. If the remaining film quality is not removed and remains partially, the cleaning liquid remaining between the film materials reacts with the gas introduced into the process chamber to act as an impurity to the wafer.
본 고안의 목적은 가스 배출구 주연 즉 플랜지의 환형돌기 상측 내벽에 증착되는 막으로 쌓이게 되는 반응 폐기물을 집진 제거토록 함으로써 웨이퍼의 손상을 방지하여 수율을 높이고, 상기 플랜지의 수명을 연장할 수 있도록 하는 반도체 저압화학기상증착 설비의 공정챔버용 플랜지를 제공함에 있다.An object of the present invention is to prevent the damage of the wafer to increase the yield and to extend the life of the flange by collecting and removing the reaction waste accumulated by the film deposited on the inner wall of the gas outlet, that is, the upper inner wall of the flange To provide a flange for the process chamber of low pressure chemical vapor deposition equipment.
상기 목적을 달성하기 위한 본 고안은 소정 직경을 갖는 관 형상으로 내벽 중심 부위를 따라 돌출 형성된 환형돌기가 형성되고, 상기 환형돌기의 하측 소정 부위에 요구되는 가스가 공급되도록 형성된 가스 주입구와 상기 환형돌기 상측 소정 부위에 공급된 잔량의 가스 및 반응 후 생성된 가스 등이 배출되는 가스 배출구가 형성된 반도체 저압화학기상증착 설비의 공정챔버용 플랜지에 있어서, 상기 환형돌기 상측 내벽에 소정 폭과 길이로 상기 가스 배출구와 부합되는 구멍을 갖는 커버판이 밀착 설치됨을 특징으로 한다.The present invention for achieving the above object is a tubular shape having a predetermined diameter is formed in the annular projection protruding along the inner wall center portion, the gas injection port and the annular projection formed to supply the gas required to the lower portion of the annular projection A flange for a process chamber of a semiconductor low pressure chemical vapor deposition apparatus having a gas outlet for discharging a residual amount of gas supplied to an upper predetermined portion and a gas generated after a reaction, wherein the gas has a predetermined width and length on an upper inner wall of the annular protrusion. It is characterized in that the cover plate having a hole corresponding to the outlet is installed in close contact.
또한, 상기 커버판은 환형돌기의 상측 내벽에 밀착된 상태를 유지하도록 상단부 소정 위치에 적어도 하나 이상의 고정돌기를 설치함이 바람직하고, 상기 커버판은 교체가 용이하도록 금속 재질의 얇은 판 형상으로 탄성력에 의해 밀착 고정되게끔 제작함이 효과적이다.In addition, the cover plate is preferably installed at least one or more fixing projections at a predetermined position of the upper end portion to maintain a state of being in close contact with the upper inner wall of the annular projection, the cover plate is an elastic force in the shape of a thin plate of metal material for easy replacement It is effective to make it tightly fixed by.
이하, 본 고안에 따른 반도체 저압화학기상증착 설비의 공정챔버용 플랜지의 바람직한 실시예에 대하여 첨부된 도면을 참조하여 상세히 설명한다.Hereinafter, a preferred embodiment of a flange for a process chamber of a semiconductor low pressure chemical vapor deposition apparatus according to the present invention will be described in detail with reference to the accompanying drawings.
제3도는 본 고안에 따른 커버판이 설치된 저압화학기상증착 설비의 공정챔버용 플랜지를 나타낸 단면도이고, 제4도는 제3도의 커버판의 펼쳐진 상태를 나타낸 평면도이며, 제5도는 제4도의 커버판을 플랜지 소정 위치에 설치할 때의 상태를 나타낸 사시도이다.Figure 3 is a cross-sectional view showing a flange for the process chamber of the low pressure chemical vapor deposition equipment with a cover plate according to the present invention, Figure 4 is a plan view showing the unfolded state of the cover plate of Figure 3, Figure 5 is a cover plate of Figure 4 It is a perspective view which shows the state at the time of installation in a flange predetermined position.
제3도 내지 제5도를 참조하여 설명하고, 종래와 동일한 부분에 대하여는 동일한 부호를 부여하며, 그에 따른 상세한 설명은 생략하기로 한다.3 to 5, the same reference numerals are given to the same parts as in the prior art, and detailed description thereof will be omitted.
제3도를 참조하여 설명하면, 플랜지(30)는 금속 재질로 제작되며, 소정 직경을 갖는 관 형상으로 내벽 중심 부위를 따라 돌출 형성된 환형돌기(32)가 형성되어 있고, 상기 환형돌기(32)의 하측 소정 부위에 요구되는 가스가 공급되도록 형성된 가스 주입구(34)와 상기 환형돌기(32) 상측 소정 부위에 공급된 잔량의 가스 및 반응 후 생성된 가스 등의 반응 폐기물이 배출되는 가스 배출구(36)가 형성되어 있다.Referring to FIG. 3, the flange 30 is made of a metal material, and has an annular protrusion 32 protruding along a central portion of the inner wall in a tubular shape having a predetermined diameter, and the annular protrusion 32. A gas inlet port 34 formed to supply a gas required to a lower predetermined portion of the gas and a reaction outlet such as a residual amount of gas supplied to the upper portion of the annular protrusion 32 and a reaction waste such as a gas generated after the reaction; ) Is formed.
이렇게 형성된 플랜지(30)의 환형돌기(32) 상측 내벽에 소정 형상의 커버판(38)이 밀착된 상태로 설치되고, 이 커버판(38)이 상기 플랜지(30)의 내벽에 밀착된 상태로 고정 유지되는 고정돌기(40)가 다수개 설치되어 있다.The cover plate 38 of a predetermined shape is installed in close contact with the inner wall of the annular protrusion 32 of the flange 30 thus formed, and the cover plate 38 is in close contact with the inner wall of the flange 30. A plurality of fixing protrusions 40 which are fixedly maintained are provided.
이렇게 설치되는 커버판(40)에 대하여 제4도 및 제5도를 참조하여 상세히 설명하면, 상기 커버판(38)은 환형돌기(32) 상측 부위에 해당하는 플랜지(30) 내벽에 소정 범위 밀착 커버할 수 있도록 소정 폭과 길이를 갖는 얇은 판으로 제작되고, 이러한 판상의 커버판(38) 소정 부위에 상기 가스 배출구(36)와 부합되는 형상의 구멍(42)이 형성되어 있다.When the cover plate 40 is installed in detail with reference to FIGS. 4 and 5, the cover plate 38 is in close contact with the inner wall of the flange 30 corresponding to the upper portion of the annular protrusion 32. It is made of a thin plate having a predetermined width and length so as to cover it, and a hole 42 having a shape corresponding to the gas outlet 36 is formed in a predetermined portion of the plate-like cover plate 38.
이렇게 형성된 커버판(38)을 제5도에 도시된 바와 같이 원형으로 감아 플랜지(30)의 환형돌기(32) 상측 내벽에 위치시켜 놓게 되면 금속 성질의 탄성력으로 상기 플랜지(30)의 내벽에 밀착된 상태를 이루게 된다.The cover plate 38 thus formed is wound in a circular shape as shown in FIG. 5 and placed on the inner wall of the upper side of the annular protrusion 32 of the flange 30. The cover plate 38 is closely attached to the inner wall of the flange 30 by an elastic force of a metallic property. Will be achieved.
그리고, 상기와 같이 밀착된 커버판(38)을 저압화학기상증착 공정을 진행함에 있어 플랜지(30) 내벽에 밀착된 상태로 유지 고정시키는 고정돌기(40)가 설치된 커버판(38) 상측 플랜지(30) 소정 부위에 통상의 방법으로 부착되어 있다.In addition, the cover plate 38, the upper flange (installed with a fixing protrusion 40 for holding and fixing the cover plate 38 in close contact with the inner wall of the flange 30 in the low pressure chemical vapor deposition process, as described above, 30) It is attached to a predetermined part by a conventional method.
이러한 구성의 본 고안은 커버판(38)을 증착막이 두껍게 형성되는 환형돌기(32) 상측 플랜지(30) 내벽에 밀착 설치함에 따라 증착되는 막질이 상기 커버판(38)의 표면에서 형성되고, 증착된 막질이 소정 두께를 이루게 되면 상기 커버판(38)을 손쉽게 교체하여 사용할 수 있게 된다.The present invention of such a configuration is formed by depositing the cover plate 38 in close contact with the inner wall of the flange 30, the upper flange 30 of the annular projection (32) where the deposition film is formed thick, is formed on the surface of the cover plate 38, the deposition When the film quality reaches a predetermined thickness, the cover plate 38 can be easily replaced and used.
따라서, 플랜지 부위에 증착되는 막질이 웨이퍼 표면에 떨어지는 것을 방지하여 웨이퍼의 손상을 방지하고, 플랜지의 세정 작업시 반응 폐기물에 의한 막질이 소량 형성됨으로 세정 시간이 단축될 뿐 아니라 플랜지의 부식됨을 줄이며, 플랜지의 수명을 연장시키는 효과가 있다.Accordingly, the film quality deposited on the flange portion is prevented from falling on the wafer surface to prevent damage to the wafer, and a small amount of film quality due to reaction waste is formed during the cleaning operation of the flange, which not only shortens the cleaning time but also reduces corrosion of the flange. It has the effect of extending the service life of the flange.
이상에서 본 고안은 기재된 구체예에 대해서만 상세히 설명되었지만 본 고안의 기술사상과 범위 내에서 다양한 변형 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정이 첨부된 실용신안등록청구의 범위에 속함은 당연하다.Although the present invention has been described in detail only with respect to the embodiments described, it will be apparent to those skilled in the art that various modifications and changes are possible within the spirit and scope of the present invention, and such modifications and modifications fall within the scope of the appended utility model registration claims. Of course.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019960016158U KR200153150Y1 (en) | 1996-06-17 | 1996-06-17 | Flange for process chamber of semiconductor low pressure chemical vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019960016158U KR200153150Y1 (en) | 1996-06-17 | 1996-06-17 | Flange for process chamber of semiconductor low pressure chemical vapor deposition equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR980005323U KR980005323U (en) | 1998-03-30 |
| KR200153150Y1 true KR200153150Y1 (en) | 1999-08-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| KR2019960016158U Expired - Lifetime KR200153150Y1 (en) | 1996-06-17 | 1996-06-17 | Flange for process chamber of semiconductor low pressure chemical vapor deposition equipment |
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| KR (1) | KR200153150Y1 (en) |
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| US9947512B2 (en) * | 2011-10-25 | 2018-04-17 | Lam Research Corporation | Window and mounting arrangement for twist-and-lock gas injector assembly of inductively coupled plasma chamber |
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1996
- 1996-06-17 KR KR2019960016158U patent/KR200153150Y1/en not_active Expired - Lifetime
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