KR100290305B1 - Boat for manufacturing semiconductor device and the process tube having its - Google Patents
Boat for manufacturing semiconductor device and the process tube having its Download PDFInfo
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- KR100290305B1 KR100290305B1 KR1019990020629A KR19990020629A KR100290305B1 KR 100290305 B1 KR100290305 B1 KR 100290305B1 KR 1019990020629 A KR1019990020629 A KR 1019990020629A KR 19990020629 A KR19990020629 A KR 19990020629A KR 100290305 B1 KR100290305 B1 KR 100290305B1
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- boat
- reaction gas
- rod
- semiconductor device
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
반도체소자 제조용 보트 및 이를 구비한 공정튜브에 관한 것이다.It relates to a boat for manufacturing a semiconductor device and a process tube having the same.
본 발명에 따른 보트는, 웨이퍼가 안착되는 복수개의 슬롯이 내면에 형성된 복수의 봉형상 로드에 의해서 상부링 및 하부받침대가 서로 연결된 반도체소자 제조용 보트에 있어서, 상기 각 로드 내부에 반응가스공급관이 구비되고, 상기 복수의 슬롯에 각각 안착된 웨이퍼 상에 반응가스를 공급할 수 있도록 상기 슬롯과 슬롯 사이의 상기 로드에 상기 반응가스공급관과 연결된 가스방출구가 형성되고, 본 발명에 따른 공정튜브는 상기 보트를 구비하는 것을 특징으로 한다.In the boat according to the present invention, a boat for manufacturing a semiconductor device in which an upper ring and a lower support are connected to each other by a plurality of rod-shaped rods having a plurality of slots on which a wafer is seated is formed on an inner surface thereof, wherein each of the rods includes a reaction gas supply pipe. And a gas outlet connected to the reaction gas supply pipe is formed in the rod between the slot and the slot so as to supply the reaction gas on the wafer seated in the plurality of slots, respectively. Characterized in having a.
따라서, 적은 양의 반응가스를 이용하여 웨이퍼 상에 특정두께 이상의 특정막을 전체적으로 균일하게 형성할 수 있고, 노즐이 내부튜브 내측에 설치되지 않으므로 노즐에 공정부산물이 증착되어 공정불량요인으로 작용하고, 노즐과 보트가 부딪혀 노즐이 깨지는 것을 방지할 수 있는 효과가 있다.Therefore, by using a small amount of reaction gas, a specific film having a specific thickness or more can be uniformly formed on the wafer, and since a nozzle is not installed inside the inner tube, process by-products are deposited on the nozzle to act as a process defect. There is an effect that can prevent the nozzle is broken by hitting the boat.
Description
본 발명은 반도체소자 제조용 보트 및 이를 구비한 공정튜브에 관한 것으로서, 보다 상세하게는 보트에 적재된 복수의 웨이퍼 상에 충분한 양의 반응가스를 공급할 수 있는 반도체소자 제조용 보트 및 이를 구비한 공정튜브에 관한 것이다.The present invention relates to a boat for manufacturing a semiconductor device and a process tube having the same, and more particularly to a boat for manufacturing a semiconductor device and a process tube having the same that can supply a sufficient amount of reaction gas on a plurality of wafers loaded on the boat. It is about.
일반적으로 반도체소자는 반도체기판으로 사용되는 웨이퍼상에 증착공정, 사진공정, 식각공정, 이온주입공정, 확산공정 및 열처리공정 등의 일련의 반도체 제조공정들을 수행하여 제조된다.Generally, a semiconductor device is manufactured by performing a series of semiconductor manufacturing processes such as a deposition process, a photo process, an etching process, an ion implantation process, a diffusion process, and a heat treatment process on a wafer used as a semiconductor substrate.
즉, 반도체소자의 제조공정은 여러 가지 전기적, 광학적 및 화학적 특성들을 갖는 얇은 폴리실리콘막, 산화막, 질화막 및 금속막 등과 같은 여러 층의 박막을 웨이퍼상에 순차적으로 형성시키는 과정으로서, 상기 박막의 증착공정, 상기 박막이 원하는 소자적 전기적 특성을 지닐 수 있도록 상기 박막의 일부분을 제거하기 위한 사진식각공정, 상기 박막의 전기적 특성을 바꾸기 위한 확산공정과 이온주입공정 및 상기 박막의 결정특성을 안정화시키는 열처리공정 등으로 이루어진다.That is, the semiconductor device manufacturing process is a process of sequentially forming a thin film of various layers such as a thin polysilicon film, an oxide film, a nitride film and a metal film having various electrical, optical and chemical properties on the wafer, and depositing the thin film. Process, photolithography process for removing a portion of the thin film so that the thin film has the desired device electrical properties, diffusion process and ion implantation process to change the electrical properties of the thin film and heat treatment to stabilize the crystal properties of the thin film Process and the like.
상기 증착공정, 확산공정 및 열처리공정은 필요에 따라 수평형(Horizontal) 또는 수직형(Vertical)의 공정튜브를 사용하고 있다.The deposition process, the diffusion process, and the heat treatment process use horizontal or vertical process tubes as necessary.
도1은 저압화학기상증착공정이 진행되는 종래의 반도체소자 제조용 수직형 공정튜브를 설명하기 위한 도면이다.1 is a view for explaining a vertical process tube for manufacturing a conventional semiconductor device is a low-pressure chemical vapor deposition process.
종래의 반도체소자 제조용 공정튜브(10)는 도1에 도시된 바와 같이 돔형의 외부튜브(12)와 원통형의 내부튜브(14)를 구비한다. 상기 외부튜브(12) 내측에 내부튜브(14)가 외부튜브(12)와 소정간격 이격되어 수용되어 있다.The process tube 10 for manufacturing a conventional semiconductor device has a domed outer tube 12 and a cylindrical inner tube 14 as shown in FIG. The inner tube 14 is accommodated spaced apart from the outer tube 12 by a predetermined interval inside the outer tube 12.
또한, 상기 내부튜브(14) 내부에는 복수의 웨이퍼(W)가 적재된 보트(Boat : 16)가 위치되어 있다. 여기서 상기 보트(16)는 구동원(도시되지 않음)의 구동에 의해서 상하로 이동함으로써 내부튜브(14) 내측 및 외측으로 이동하고, 상기 내부튜브(14) 내부에서 회전할 수 있도록 되어 있다. 일반적으로 보트(16)는 석영재질의 상부링 및 하부고정부가 3개의 봉형상의 석영로드(Quartz rod)에 의해서 연결된 구조로 이루어지고, 상기 석영로드 내측에 웨이퍼(W)가 삽입되는 복수의 슬롯(Slot)이 형성되어 있다.In addition, a boat 16 on which a plurality of wafers W are mounted is located in the inner tube 14. In this case, the boat 16 is moved up and down by the driving source (not shown) to move inside and outside the inner tube 14, and to rotate inside the inner tube 14. In general, the boat 16 has a structure in which an upper ring and a lower fixing part of a quartz material are connected by three rod-shaped quartz rods, and a plurality of slots in which a wafer W is inserted into the quartz rod. Slot) is formed.
그리고, 상기 내부튜브(14) 내측에 노즐(18)이 구비됨으로써 저압화학기상증착공정에 사용될 반응가스를 내부튜브(14) 내부로 공급할 수 있도록 되어 있다. 상기 노즐(18)은 공정튜브(10)의 하부를 관통하여 내부튜브(14) 내측 상부로 절곡연장되어 있고, 상기 노즐(18)에는 복수의 가스방출구(19)가 형성되어 있다.In addition, the nozzle 18 is provided inside the inner tube 14 to supply the reaction gas to be used in the low pressure chemical vapor deposition process into the inner tube 14. The nozzle 18 penetrates through the lower portion of the process tube 10 and is bent to the upper portion of the inner tube 14, and a plurality of gas outlets 19 are formed in the nozzle 18.
또한, 상기 공정튜브(10)의 하부 소정부에는 공정튜브(10)의 내부압력을 조절할 수 있도록 진공배기구(20)가 형성되어 있다. 상기 진공배기구(20)는 도면에는 도시되지 않았으나 진공펌프(도시되지 않음)와 연결되어 있다.In addition, a vacuum exhaust port 20 is formed at a lower predetermined portion of the process tube 10 to adjust the internal pressure of the process tube 10. Although not shown in the drawing, the vacuum exhaust port 20 is connected to a vacuum pump (not shown).
따라서, 진공배기구(20)를 통해서 공정튜브(10)의 내부기체가 외부로 펌핑됨에 따라 공정튜브(10)의 내부압력은 특정 저진공상태가 형성되고, 공정튜브(10)의 내부온도 등과 같은 다른 공정환경이 설정되면, 반응가스는 노즐(18)의 가스방출구(19)를 통해서 내부튜브(14) 내부로 공급된다.Therefore, as the internal gas of the process tube 10 is pumped to the outside through the vacuum exhaust port 20, the internal pressure of the process tube 10 is formed in a specific low vacuum state, such as the internal temperature of the process tube 10, and the like. When another process environment is set, the reaction gas is supplied into the inner tube 14 through the gas outlet 19 of the nozzle 18.
그리고, 내부튜브(14) 내부로 공급된 반응가스는 보트(16)에 적재된 웨이퍼(W)의 상부표면과 각각 화학반응함으로써 웨이퍼(W) 상에는 특정막이 증착된다. 통상, 전술한 증착공정이 진행될 때, 상기 보트(16)는 구동원의 구동에 의해서 회전함으로써 보트(16)에 적재된 각 웨이퍼(W)의 전면에 전체적으로 균일한 특정막이 형성될 수 있도록 한다.The reaction gas supplied into the inner tube 14 chemically reacts with the upper surface of the wafer W loaded on the boat 16 to deposit a specific film on the wafer W. FIG. In general, when the above-described deposition process is performed, the boat 16 is rotated by the driving of the driving source so that a uniform film is formed on the entire surface of each wafer W loaded on the boat 16.
그리고, 상기 증착공정이 완료되면, 상기 보트(16)는 구동원의 구동에 의해서 하부로 이동함으로써 내부튜브(14) 외부로 이동하게 된다. 이후, 상기 보트(16) 상에 적재된 복수의 웨이퍼(W)는 이재기 등에 의해서 소정위치로 이동하게 되고, 상기 보트(16)에는 새로운 웨이퍼가 적재되며, 상기 새로운 웨이퍼가 적재된 보트(16)는 다시 구동원의 구동에 의해서 상부로 이동함으로써 내부튜브(14) 내부로 이동하게 된다.Then, when the deposition process is completed, the boat 16 is moved to the outside by moving to the lower by the drive of the drive source. Thereafter, the plurality of wafers W loaded on the boat 16 are moved to a predetermined position by a transfer machine or the like, and the boat 16 is loaded with a new wafer, and the boat 16 with the new wafer is loaded. Is moved back into the inner tube 14 by moving upward by the drive of the drive source.
그러나, 양호한 반도체소자를 제조할 수 있도록 웨이퍼 상에 형성되는 특정막의 두께, 막질의 균일성 등은 매우 뛰어나야 하나, 노즐의 가스방출구를 통해서 내부튜브 내부로 공급된 전체 반응가스의 70 ％ 정도는 웨이퍼와 직접 접촉하지 못하고 진공배기구를 통해서 외부로 펌핑됨으로써 전체 반응가스의 30% 정도만이 웨이퍼와 적접 접촉함으로써 웨이퍼 상에 형성된 특정막의 두께가 얇고, 막질의 균일성이 떨어지는 문제점이 있었다.However, in order to manufacture a good semiconductor device, the thickness of the specific film formed on the wafer, the uniformity of film quality, etc. should be excellent, but about 70% of the total reaction gas supplied into the inner tube through the gas outlet of the nozzle Since only about 30% of the total reaction gas is in direct contact with the wafer because it is pumped out through a vacuum exhaust port without directly contacting the wafer, there is a problem in that the thickness of a specific film formed on the wafer is thin and the film quality is inferior.
또한, 고가의 반응가스가 진공배기구를 통해서 외부로 펌핑됨으로써 반응가스의 소모량이 증가하여 반도체소자 제조비용이 증가하는 문제점이 있다.In addition, the expensive reaction gas is pumped to the outside through the vacuum vent, the consumption of the reaction gas increases, there is a problem that the manufacturing cost of the semiconductor device increases.
그리고, 상기 보트는 상하로 움직여 공정튜부 내부 및 외부로 이동함으로써 보트가 이동하는 과정에 보트와 노즐이 부딪혀 노즐이 깨지는 문제점이 있었다.In addition, the boat is moved up and down to move inside and outside the process tubing, there is a problem that the nozzle and the nozzle collides in the process of the boat moving the nozzle is broken.
또한, 전술한 증착공정은 반응가스의 반응에 의한 공정부산물을 형성하게 됨으로써 상기 공정부산물이 노즐상에 축적된 후 후속 증착공정을 진행할 때 웨이퍼 상에 떨어져 공정불량 요인으로 작용하는 문제점이 있었다.In addition, the above-described deposition process has a problem of forming a process by-product by the reaction of the reaction gas, so that the process by-product accumulates on the nozzle and falls on the wafer when the subsequent deposition process proceeds, thereby causing a process defect.
본 발명의 목적은, 웨이퍼 상에 증착되는 특정막의 두께와 막질의 균일성을 향상시킬 수 있는 반도체소자 제조용 보트 및 이를 구비한 공정튜브를 제공하는 데 있다.An object of the present invention is to provide a boat for manufacturing a semiconductor device and a process tube having the same that can improve the uniformity of the thickness and film quality of the specific film deposited on the wafer.
본 발명의 다른 목적은, 반응가스의 소모량을 줄일 수 있는 반도체소자 제조용 보트 및 이를 구비한 공정튜브를 제공하는 데 있다.Another object of the present invention is to provide a boat and a process tube having the same for manufacturing a semiconductor device that can reduce the consumption of the reaction gas.
본 발명의 또다른 목적은, 보트가 상하로 이동하면서 보트와 노즐이 부딪혀 노즐이 깨지는 것을 방지할 수 있는 반도체소자 제조용 보트 및 이를 구비한 공정튜브를 제공하는 데 있다.Still another object of the present invention is to provide a boat for manufacturing a semiconductor device and a process tube having the same, which can prevent the boat from colliding with the boat while the boat moves up and down.
본 발명의 또다른 목적은, 노즐에 흡착된 공정부산물이 후속 증착공정을 진행할 때 웨이퍼상에 떨어져 공정불량 요인으로 작용하는 것을 방지할 수 있는 반도체소자 제조용 보트 및 이를 구비한 공정튜브를 제공하는 데 있다.It is still another object of the present invention to provide a boat for manufacturing a semiconductor device and a process tube having the same, which can prevent the process by-product adsorbed on the nozzle from falling on the wafer during the subsequent deposition process and acting as a process defect. have.
도1은 종래의 반도체소자 제조용 공정튜브의 개략적인 단면도이다.1 is a schematic cross-sectional view of a process tube for manufacturing a conventional semiconductor device.
도2는 본 발명의 일 실시예에 따른 반도체소자 제조용 보트의 사시도이다.2 is a perspective view of a boat for manufacturing a semiconductor device according to an embodiment of the present invention.
도3은 도2에 도시된 반도체소자 제조용 보트를 구비한 공정튜브를 설명하기 위한 개략적 도면이다.FIG. 3 is a schematic view for explaining a process tube having a boat for manufacturing a semiconductor device shown in FIG.
※도면의 주요부분에 대한 부호의 설명※ Explanation of symbols for main parts of drawing
10, 60 : 공정튜브 12, 62 : 외부튜브10, 60: process tube 12, 62: outer tube
14, 64 : 내부튜브 16, 30 : 보트14, 64: inner tube 16, 30: boat
18 : 노즐 19 : 가스방출구18: nozzle 19: gas outlet
20, 68 : 진공배기구 32 : 상부링20, 68: vacuum exhaust 32: upper ring
34 : 하부받침대 36 : 제 1 로드34: lower support 36: first rod
38 : 제 2 로드 40 : 제 3 로드38: second load 40: third load
42 : 제 1 반응가스공급관 44 : 제 2 반응가스공급관42: first reaction gas supply pipe 44: second reaction gas supply pipe
46 : 제 3 반응가스공급관 48 : 가스방출구46: third reaction gas supply pipe 48: gas outlet
50 : 웨이퍼안착부 66 : 하부구조물50: wafer seating portion 66: lower structure
W : 웨이퍼W: Wafer
상기 목적을 달성하기 위한 본 발명에 따른 반도체소자 제조용 보트는, 웨이퍼가 안착되는 복수개의 슬롯이 내면에 형성된 복수의 봉형상 로드에 의해서 상부링 및 하부받침대가 서로 연결된 반도체소자 제조용 보트에 있어서, 상기 각 로드 내부에 반응가스공급관이 구비되고, 상기 복수의 슬롯에 각각 안착된 웨이퍼 상에 반응가스를 공급할 수 있도록 상기 슬롯과 슬롯 사이의 상기 로드에 상기 반응가스공급관과 연결된 가스방출구가 형성되어 있는 것을 특징으로 한다.In the boat for manufacturing a semiconductor device according to the present invention for achieving the above object, in the boat for manufacturing a semiconductor device in which the upper ring and the lower support are connected to each other by a plurality of rod-shaped rod formed on the inner surface of the plurality of slots on which the wafer is seated, A reaction gas supply pipe is provided inside each rod, and a gas discharge port connected to the reaction gas supply pipe is formed in the rod between the slot and the slot so as to supply reaction gas onto a wafer seated in each of the plurality of slots. It is characterized by.
상기 슬롯과 슬롯 사이의 상기 로드에 형성된 가스방출구는 서로 비대칭또는 대칭되게 설치될 수 있다.The gas outlets formed in the slot and the rod between the slots may be installed asymmetrically or symmetrically with each other.
그리고, 상기 각 로드는 석영재질로 형성될 수 있다.Each of the rods may be formed of a quartz material.
또한, 본 발명에 따른 반도체소자 제조용 튜브는, 웨이퍼가 안착되는 복수개의 슬롯이 내면에 형성된 복수의 봉형상 로드에 의해서 상부링 및 하부받침대가 서로 연결되고, 상기 각 로드 내부에 반응가스공급관이 구비되고, 상기 복수의 슬롯에 각각 안착된 웨이퍼 상에 반응가스를 공급할 수 있도록 상기 슬롯과 슬롯 사이의 상기 로드에 상기 반응가스공급관과 연결된 가스방출구가 형성된 보트를 구비하는 것을 특징으로 한다.In addition, the tube for manufacturing a semiconductor device according to the present invention, the upper ring and the lower support are connected to each other by a plurality of rod-shaped rod formed on the inner surface of the plurality of slots on which the wafer is seated, the reaction gas supply pipe is provided in each of the rod And a boat having a gas discharge port connected to the reaction gas supply pipe in the rod between the slot and the slot so as to supply the reaction gas onto the wafer seated in the plurality of slots, respectively.
이하, 본 발명의 구체적인 실시예를 첨부한 도면을 참조하여 상세히 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도2는 본 발명의 일 실시예에 따른 반도체소자 제조용 보트의 사시도이다.2 is a perspective view of a boat for manufacturing a semiconductor device according to an embodiment of the present invention.
본 발명에 따른 반도체소자 제조용 보트(30)는, 도2에 도시된 바와 같이 상부링(32) 및 하부받침대(34)가 서로 소정간격 이격된 봉상의 제 1 로드(36), 제 2 로드(38) 및 제 3 로드(40)에 의해서 서로 연결되어 있다. 상기 상부링(32), 하부받침대(34) 및 각 로드(36, 38, 40)는 석영재질로 이루어진다.As shown in FIG. 2, the boat 30 for manufacturing a semiconductor device according to the present invention includes a rod-shaped first rod 36 and a second rod in which an upper ring 32 and a lower support 34 are spaced apart from each other by a predetermined distance. 38) and the third rod 40 are connected to each other. The upper ring 32, the lower support 34 and each rod 36, 38, 40 is made of a quartz material.
그리고, 상기 제 1 로드(36) 내부에는 제 1 반응가스공급관(42)이 형성되어 있고, 상기 제 2 로드(38) 내부에는 제 2 반응가스공급관(44)이 형성되어 있고, 상기 제 3 로드(40) 내부에는 제 3 반응가스공급관(46)이 형성되어 있다.In addition, a first reaction gas supply pipe 42 is formed in the first rod 36, and a second reaction gas supply pipe 44 is formed in the second rod 38, and the third rod Inside the 40, a third reaction gas supply pipe 46 is formed.
또한, 상기 각 로드(36, 38, 40)의 내측에는 웨이퍼가 안착될 수 있도록 계단형상의 웨이퍼 안착부(50)가 복수개 형성되어 있고, 상기 웨이퍼 안착부(50) 상부의 각 로드(36, 38, 40) 내측에는 반응가스공급관(42, 44, 46)의 반응가스를 외부로 방출하는 가스방출구(48)가 형성되어 있다. 상기 가스방출구(48)는 서로 대칭 또는 비대칭되게 설치될 수 있다.In addition, a plurality of stepped wafer seating portions 50 are formed inside the rods 36, 38, and 40 so that wafers can be seated, and each rod 36 of the upper portion of the wafer seating portion 50 is formed. Inside the 38 and 40, a gas discharge port 48 for discharging the reaction gas from the reaction gas supply pipes 42, 44 and 46 to the outside is formed. The gas outlets 48 may be installed symmetrically or asymmetrically with each other.
도3은 도2에 도시된 반도체소자 제조용 보트가 설치된 공정튜브를 설명하기 위한 개략적 도면이다.FIG. 3 is a schematic diagram illustrating a process tube in which a boat for manufacturing a semiconductor device shown in FIG. 2 is installed.
본 발명에 따른 공정튜브(60)는, 하부구조물(66) 상에 돔형의 외부튜브(62)가 거취된 구조로 이루어지며, 상기 외부튜브(62) 내측에는 외부튜브(62)와 소정간격 이격되어 역시 하부구조물(66) 상에 거취된 내부튜브(64)가 설치되어 있다. 여기서, 상기 하부구조물(66) 일측에는 공정튜브(60)의 내부압력을 조절하는 진공배기구(68)가 형성되어 있으며, 상기 진공배기구(68)는 도면에는 도시되지 않았으나 진공펌프(도시되지 않음)와 연결되어 있다.The process tube 60 according to the present invention has a structure in which a dome-shaped outer tube 62 is taken on the lower structure 66, and is spaced apart from the outer tube 62 by a predetermined interval inside the outer tube 62. The inner tube 64 is also installed on the lower structure 66 is installed. Here, one side of the lower structure 66 is formed with a vacuum exhaust port 68 for controlling the internal pressure of the process tube 60, the vacuum exhaust port 68 is not shown in the figure, but a vacuum pump (not shown) Connected with
또한, 본 발명에 따른 공정튜브(60)의 내부튜브(64) 내측에는 복수개의 웨이퍼(W)가 적재된 본 발명에 따른 보트(30)가 설치되어 있다. 상기 보트(30)는 구동원(70)의 구동에 의해서 상하로 이동함으로써 공정튜브(60) 내부 및 외부로 이동할 수 있도록 되어 있다.In addition, the boat 30 according to the present invention, in which the plurality of wafers W are loaded, is installed inside the inner tube 64 of the process tube 60 according to the present invention. The boat 30 is moved up and down by driving the drive source 70 so as to be able to move inside and outside the process tube 60.
따라서, 상기 진공펌프의 가동에 따라 공정튜브(60)의 내부압력이 특정 저진공상태로 전환되고, 공정튜브(60)의 내부온도 등의 공정환경요소가 적정수준으로 설정되면, 각 로드(36, 38, 40) 내부에 형성된 반응가스공급관(42, 44, 46)과 연결된 가스방출구(48)를 통해서 반응가스가 내부튜브(64) 내부로 공급된다. 여기서, 반응가스는 보트(30)의 웨이퍼 안착부(50) 상에 안착된 웨이퍼(W) 상에 공급됨으로써 웨이퍼(W)의 상부 전표면에는 충분한 양의 반응가스가 공급된다.Therefore, when the internal pressure of the process tube 60 is switched to a specific low vacuum state according to the operation of the vacuum pump, and the process environment element such as the internal temperature of the process tube 60 is set to an appropriate level, each rod 36 The reaction gas is supplied into the inner tube 64 through the gas discharge ports 48 connected to the reaction gas supply pipes 42, 44, and 46 formed in the cylinders 38 and 40. Here, the reaction gas is supplied onto the wafer W seated on the wafer seating portion 50 of the boat 30, so that a sufficient amount of reaction gas is supplied to the entire upper surface of the wafer W.
그러므로, 본 발명에 따른 반도체소자 제조용 공정튜브를 사용하여 증착공정을 진행하게 되면, 종래와 비교하여 적은 양의 반응가스를 사용하여 웨이퍼 상에 특정두께 이상의 특정막을 전체적으로 균일하게 형성할 수 있다.Therefore, when the deposition process is performed using the process tube for manufacturing a semiconductor device according to the present invention, it is possible to uniformly form a specific film of a specific thickness or more on a wafer using a smaller amount of reaction gas than in the prior art.
또한, 본 발명에 따른 반도체소자 제조용 공정튜브 내측에는 종래와 같이 노즐이 설치되지 않으므로, 보트가 상하로 이동하는 과정에 보트와 노즐이 부딪혀 노즐이 깨지는 것을 방지할 수 있고, 상기 노즐 상에 공정부산물이 증착되어 상기 공정부산물이 후속 증착공정 과정에 웨이퍼 상에 떨어지는 것을 방지할 수 있다.In addition, since the nozzle is not installed inside the process tube for manufacturing a semiconductor device according to the present invention as in the related art, the nozzle and the nozzle may be prevented from colliding with the boat during the vertical movement of the boat, and the process by-product on the nozzle may be prevented. This deposition may prevent the process byproduct from falling onto the wafer in subsequent deposition processes.
따라서, 본 발명에 의하면 적은 양의 반응가스를 이용하여 웨이퍼 상에 특정두께 이상의 특정막을 전체적으로 균일하게 형성할 수 있고, 노즐이 내부튜브 내측에 설치되지 않으므로 노즐에 공정부산물이 증착되어 공정불량요인으로 작용하고, 노즐과 보트가 부딪혀 노즐이 깨지는 것을 방지할 수 있는 효과가 있다.Therefore, according to the present invention, it is possible to uniformly form a specific film of a specific thickness or more on the wafer by using a small amount of reaction gas, and since the nozzle is not installed inside the inner tube, process by-products are deposited on the nozzle, which causes process defects. It is effective to prevent the nozzle from breaking by hitting the nozzle and the boat.
이상에서 본 발명은 기재된 구체예에 대해서만 상세히 설명되었지만 본 발명의 기술사상 범위 내에서 다양한 변형 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정이 첨부된 특허청구범위에 속함은 당연한 것이다.Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical scope of the present invention, and such modifications and modifications are within the scope of the appended claims.
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| KR1019990020629A KR100290305B1 (en) | 1999-06-04 | 1999-06-04 | Boat for manufacturing semiconductor device and the process tube having its |
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| KR1019990020629A KR100290305B1 (en) | 1999-06-04 | 1999-06-04 | Boat for manufacturing semiconductor device and the process tube having its |
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| KR20010001419A KR20010001419A (en) | 2001-01-05 |
| KR100290305B1 true KR100290305B1 (en) | 2001-05-15 |
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| KR1019990020629A Expired - Fee Related KR100290305B1 (en) | 1999-06-04 | 1999-06-04 | Boat for manufacturing semiconductor device and the process tube having its |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101677591B1 (en) * | 2015-06-10 | 2016-11-22 | 국제엘렉트릭코리아 주식회사 | substrate boat and Cluster Apparatus Including The Same |
| CN110246791A (en) * | 2019-05-20 | 2019-09-17 | 武汉新芯集成电路制造有限公司 | A kind of wafer handler goes deimpurity equipment and goes deimpurity method |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100442419B1 (en) * | 2001-07-24 | 2004-07-30 | 주식회사 크레젠 | Apparatus for manufacturing semiconductor device |
| KR100678475B1 (en) * | 2005-03-16 | 2007-02-02 | 삼성전자주식회사 | Wafer cleaning boats and storage with them |
| KR100833712B1 (en) * | 2007-02-28 | 2008-05-29 | 주식회사 테라세미콘 | Gas supply in large area substrate processing systems |
| KR101130037B1 (en) * | 2009-07-22 | 2012-03-23 | 주식회사 테라세미콘 | Boat |
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1999
- 1999-06-04 KR KR1019990020629A patent/KR100290305B1/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101677591B1 (en) * | 2015-06-10 | 2016-11-22 | 국제엘렉트릭코리아 주식회사 | substrate boat and Cluster Apparatus Including The Same |
| CN110246791A (en) * | 2019-05-20 | 2019-09-17 | 武汉新芯集成电路制造有限公司 | A kind of wafer handler goes deimpurity equipment and goes deimpurity method |
| CN110246791B (en) * | 2019-05-20 | 2022-10-28 | 武汉新芯集成电路制造有限公司 | Wafer conveying device, equipment and method for removing impurities |
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