KR20000062648A - 반도체 레이저 - Google Patents
반도체 레이저 Download PDFInfo
- Publication number
- KR20000062648A KR20000062648A KR1020000009426A KR20000009426A KR20000062648A KR 20000062648 A KR20000062648 A KR 20000062648A KR 1020000009426 A KR1020000009426 A KR 1020000009426A KR 20000009426 A KR20000009426 A KR 20000009426A KR 20000062648 A KR20000062648 A KR 20000062648A
- Authority
- KR
- South Korea
- Prior art keywords
- stem
- cap
- pedestal
- laser chip
- fixed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract description 23
- 229920005989 resin Polymers 0.000 claims abstract description 38
- 239000011347 resin Substances 0.000 claims abstract description 38
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000000853 adhesive Substances 0.000 claims abstract description 8
- 230000001070 adhesive effect Effects 0.000 claims abstract description 8
- 239000004020 conductor Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 238000013461 design Methods 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 description 19
- 239000002184 metal Substances 0.000 description 19
- 239000011521 glass Substances 0.000 description 6
- 238000003466 welding Methods 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010273 cold forging Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 241000135309 Processus Species 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/10—Scanning systems
- G02B26/103—Scanning systems having movable or deformable optical fibres, light guides or waveguides as scanning elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/0231—Stems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims (4)
- 도전재로 이루어지는 복수의 리드가 상하에 노출되도록 수지에 의해 일체성형된 수지제 스템과,상기 복수의 리드의 1개와 전기적으로 접속되어 설치되는 대좌와,상기 대좌에 고착되는 레이저 칩과,상기 레이저 칩의 주위를 덮음과 동시에 정상부에 광의 투과창을 갖고, 상기 스템에 고정되는 캡으로 이루어지는 것을 특징으로 하는 반도체 레이저.
- 제 1항에 있어서,상기 리드의 1개와 상기 대좌가 일체로 형성됨과 동시에, 상기 대좌와 일체로 상기 스템위에 노출하고 상기 스템 주위에 연장되는 돌출부가 설치되며, 상기 돌출부 위에 상기 캡의 저부가 고착되는 것을 특징으로 하는 반도체 레이저.
- 제 1항 또는 제 2항에 있어서,상기 캡의 저부에 상기 스템 주위의 상부 및 측부를 피복하도록 단이 있는 스커트부가 형성되며, 상기 캡의 스커트부가 위치맞춤의 기준면으로 되는 것을 특징으로 하는 반도체 레이저.
- 제 1 내지 제 3항중 어느 한 항에 있어서,상기 캡이 열 전도가 양호한 접착제에 의해 상기 스템에 고착되는 것을 특징으로 하는 반도체 레이저.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11-054758 | 1999-03-02 | ||
JP05475899A JP3869575B2 (ja) | 1999-03-02 | 1999-03-02 | 半導体レーザ |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20000062648A true KR20000062648A (ko) | 2000-10-25 |
KR100681655B1 KR100681655B1 (ko) | 2007-02-09 |
Family
ID=12979684
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020000009426A Expired - Fee Related KR100681655B1 (ko) | 1999-03-02 | 2000-02-25 | 반도체 레이저 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP3869575B2 (ko) |
KR (1) | KR100681655B1 (ko) |
CN (1) | CN100388574C (ko) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003031885A (ja) | 2001-07-19 | 2003-01-31 | Toshiba Corp | 半導体レーザ装置 |
JP2004128378A (ja) | 2002-10-07 | 2004-04-22 | Sharp Corp | 半導体レーザ装置およびその製造方法 |
JP2004356359A (ja) * | 2003-05-29 | 2004-12-16 | Sharp Corp | 半導体レーザ装置およびその製造方法 |
KR100526504B1 (ko) * | 2003-06-04 | 2005-11-08 | 삼성전자주식회사 | 광소자 모듈 패키지 및 그 제조 방법 |
JP4795728B2 (ja) * | 2005-06-14 | 2011-10-19 | 新光電気工業株式会社 | 光半導体素子用ステム及び光半導体装置 |
JP4786350B2 (ja) | 2006-01-19 | 2011-10-05 | シャープ株式会社 | 半導体レーザ装置および光ピックアップ装置 |
US20080303127A1 (en) | 2007-06-05 | 2008-12-11 | Mitsubishi Electric Corporation | Cap-less package and manufacturing method thereof |
JP2009152330A (ja) * | 2007-12-20 | 2009-07-09 | Panasonic Corp | 半導体装置、半導体装置の製造方法、半導体装置の製造装置および光ピックアップ装置ならびに光ディスクドライブ装置 |
KR102031573B1 (ko) * | 2015-04-24 | 2019-10-14 | 쿄세라 코포레이션 | 광소자 탑재용 패키지, 전자 장치 및 전자 모듈 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0448675Y2 (ko) * | 1988-04-28 | 1992-11-17 | ||
EP0366472B1 (en) * | 1988-10-28 | 1994-01-19 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser apparatus |
JP2560137B2 (ja) * | 1990-06-14 | 1996-12-04 | ローム株式会社 | 半導体レーザ装置 |
JP3193742B2 (ja) * | 1991-09-19 | 2001-07-30 | 株式会社リコー | Ld光源装置 |
JPH1051065A (ja) * | 1996-08-02 | 1998-02-20 | Matsushita Electron Corp | 半導体レーザ装置 |
JPH1125465A (ja) * | 1997-06-30 | 1999-01-29 | Victor Co Of Japan Ltd | 半導体レーザ装置 |
-
1999
- 1999-03-02 JP JP05475899A patent/JP3869575B2/ja not_active Expired - Fee Related
-
2000
- 2000-02-25 KR KR1020000009426A patent/KR100681655B1/ko not_active Expired - Fee Related
- 2000-03-01 CN CNB001030302A patent/CN100388574C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP3869575B2 (ja) | 2007-01-17 |
JP2000252575A (ja) | 2000-09-14 |
CN100388574C (zh) | 2008-05-14 |
KR100681655B1 (ko) | 2007-02-09 |
CN1265529A (zh) | 2000-09-06 |
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