KR20000058210A - 균일한 스캐닝 에너지를 발생하는 필드 거울을 갖는조사장치 - Google Patents
균일한 스캐닝 에너지를 발생하는 필드 거울을 갖는조사장치 Download PDFInfo
- Publication number
- KR20000058210A KR20000058210A KR1020000009616A KR20000009616A KR20000058210A KR 20000058210 A KR20000058210 A KR 20000058210A KR 1020000009616 A KR1020000009616 A KR 1020000009616A KR 20000009616 A KR20000009616 A KR 20000009616A KR 20000058210 A KR20000058210 A KR 20000058210A
- Authority
- KR
- South Korea
- Prior art keywords
- field
- mirror
- irradiation
- plane
- irradiation apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Microscoopes, Condenser (AREA)
Abstract
Description
도 2 에서의 Ref. No. | 표면 파라미터(반경R,코니칼상수 K) | 광학축을따른 두께d[㎜] | 광학축의굽힘각 αx[。] | |
소오스 | 200 | ∞ | 100.000 | 0.0 |
콜렉터 거울 | 12 | R=183.277㎜K=0.6935 | 881.119 | 0.0 |
필드면을 갖는거울 | 22 | ∞ | 200.000 | 7.3 |
개구 조리개평면 | 23 | ∞ | 1710.194 | 0.0 |
제 1 필드거울 | 24 | Ry=-7347.291㎜Rx=-275.237Ky=-384.814Kx=-3.813 | 200.000 | -80.0 |
제 2 필드거울 | 25 | Ry=14032.711㎜Rx=1067.988Ky=-25452.699Kx=-667.201 | 250.000 | 80.0 |
레티클 | 26 | ∞ | 1927.420 | 2.97 |
출구 동공 | 27 | ∞ |
Rx 제1거울 | Ry 제1거울 | Kx 제1거울 | Ky 제1거울 | Rx 제2거울 | Ry 제2거울 | Kx 제2거울 | Ky 제2거울 | 균일성[%] | 레티클 평면내 전송 중심 에러Δimax[mrad] |
코닉 상수없음 | 10.7 | 0.24 | |||||||
변화, 필드 거울 1 | |||||||||
× | 8.6 | 1.0 | |||||||
× | × | 8.5 | 1.0 | ||||||
× | × | 8.1 | 1.0 | ||||||
× | × | × | 7.8 | 1.0 | |||||
× | × | × | × | 7.8 | 1.0 | ||||
변화, 필드 거울 1+2 | |||||||||
× | × | 7.0 | 1.0 | ||||||
× | × | × | × | 6.0 | 1.0 | ||||
× | × | × | × | 5.1 | 1.0 | ||||
× | × | × | × | × | × | 5.1 | 1.0 | ||
× | × | × | × | × | × | × | × | 4.6 | 1.0 |
Claims (30)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19908526A DE19908526A1 (de) | 1999-02-26 | 1999-02-26 | Beleuchtungssystem mit Feldspiegeln zur Erzielung einer gleichförmigen Scanenergie |
DE19908526.9 | 1999-02-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20000058210A true KR20000058210A (ko) | 2000-09-25 |
Family
ID=7899072
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020000009616A Abandoned KR20000058210A (ko) | 1999-02-26 | 2000-02-26 | 균일한 스캐닝 에너지를 발생하는 필드 거울을 갖는조사장치 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6770894B1 (ko) |
EP (1) | EP1031882A3 (ko) |
JP (1) | JP2000252208A (ko) |
KR (1) | KR20000058210A (ko) |
DE (1) | DE19908526A1 (ko) |
TW (1) | TW440748B (ko) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6438199B1 (en) * | 1998-05-05 | 2002-08-20 | Carl-Zeiss-Stiftung | Illumination system particularly for microlithography |
EP1469349B1 (en) * | 2003-04-17 | 2011-10-05 | ASML Netherlands B.V. | Lithographic projection apparatus with collector including a concave mirror and a convex mirror |
EP1724641A1 (en) * | 2005-05-20 | 2006-11-22 | Infineon Technologies AG | Lithograpic projection apparatus and method of exposing a semiconductor wafer with a pattern from a mask |
EP1890191A1 (en) * | 2006-08-14 | 2008-02-20 | Carl Zeiss SMT AG | Catadioptric projection objective with pupil mirror |
EP1950594A1 (de) * | 2007-01-17 | 2008-07-30 | Carl Zeiss SMT AG | Abbildende Optik, Projektionsbelichtunsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik, Verfahren zur Herstellung eines mikrostrukturierten Bauteils mit einer derartigen Projektionsbelichtungsanlage, durch das Herstellungsverfahren gefertigtes mikrostrukturiertes Bauelement sowie Verwendung einer derartigen abbildenden Optik |
JP5902884B2 (ja) * | 2007-10-26 | 2016-04-13 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 結像光学系及びこの種の結像光学系を含むマイクロリソグラフィ用の投影露光装置 |
JP6112478B2 (ja) | 2008-03-20 | 2017-04-12 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィのための投影対物系 |
DE102009006685A1 (de) * | 2009-01-29 | 2010-08-05 | Carl Zeiss Smt Ag | Beleuchtungssystem für die Mikro-Lithographie |
KR101478400B1 (ko) * | 2009-03-06 | 2015-01-06 | 칼 짜이스 에스엠티 게엠베하 | 조명 광학 시스템 및 마이크로리소그래피용 광학 시스템 |
DE102014218474A1 (de) * | 2014-09-15 | 2016-03-17 | Carl Zeiss Smt Gmbh | Projektionsobjektiv, Projektionsbelichtungsanlage und Projektionsbelichtungsverfahren für die EUV-Mikrolithographie |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4883352A (en) * | 1984-06-21 | 1989-11-28 | American Telephone And Telegraph Company | Deep-uv lithography |
JPH02180013A (ja) | 1989-01-05 | 1990-07-12 | Nippon Telegr & Teleph Corp <Ntt> | X線投影露光装置 |
US5222112A (en) | 1990-12-27 | 1993-06-22 | Hitachi, Ltd. | X-ray pattern masking by a reflective reduction projection optical system |
US5640284A (en) | 1992-09-11 | 1997-06-17 | Nikon Corporation | Optical reflector, illumination optical system, light source system and illumination optical apparatus |
US5339346A (en) | 1993-05-20 | 1994-08-16 | At&T Bell Laboratories | Device fabrication entailing plasma-derived x-ray delineation |
US6229595B1 (en) * | 1995-05-12 | 2001-05-08 | The B. F. Goodrich Company | Lithography system and method with mask image enlargement |
US5805365A (en) * | 1995-10-12 | 1998-09-08 | Sandia Corporation | Ringfield lithographic camera |
DE19548805A1 (de) * | 1995-12-27 | 1997-07-03 | Zeiss Carl Fa | REMA-Objektiv für Mikrolithographie-Projektionsbelichtungsanlagen |
US5737137A (en) | 1996-04-01 | 1998-04-07 | The Regents Of The University Of California | Critical illumination condenser for x-ray lithography |
JP3862347B2 (ja) | 1996-04-11 | 2006-12-27 | キヤノン株式会社 | X線縮小露光装置およびこれを利用したデバイス製造方法 |
JPH1152289A (ja) | 1997-08-05 | 1999-02-26 | Minolta Co Ltd | 二次元照明光学系及びこれを用いた液晶プロジェクター |
US5844727A (en) * | 1997-09-02 | 1998-12-01 | Cymer, Inc. | Illumination design for scanning microlithography systems |
US5920380A (en) * | 1997-12-19 | 1999-07-06 | Sandia Corporation | Apparatus and method for generating partially coherent illumination for photolithography |
US6144495A (en) * | 1997-12-23 | 2000-11-07 | Canon Kabushiki Kaisha | Projection light source |
JP4238390B2 (ja) | 1998-02-27 | 2009-03-18 | 株式会社ニコン | 照明装置、該照明装置を備えた露光装置および該露光装置を用いて半導体デバイスを製造する方法 |
EP0955641B1 (de) * | 1998-05-05 | 2004-04-28 | Carl Zeiss | Beleuchtungssystem insbesondere für die EUV-Lithographie |
US6195201B1 (en) | 1999-01-27 | 2001-02-27 | Svg Lithography Systems, Inc. | Reflective fly's eye condenser for EUV lithography |
US6215128B1 (en) * | 1999-03-18 | 2001-04-10 | Etec Systems, Inc. | Compact photoemission source, field and objective lens arrangement for high throughput electron beam lithography |
-
1999
- 1999-02-26 DE DE19908526A patent/DE19908526A1/de not_active Withdrawn
-
2000
- 2000-02-11 TW TW089102315A patent/TW440748B/zh not_active IP Right Cessation
- 2000-02-25 US US09/514,040 patent/US6770894B1/en not_active Expired - Fee Related
- 2000-02-25 EP EP00104014A patent/EP1031882A3/en not_active Withdrawn
- 2000-02-26 KR KR1020000009616A patent/KR20000058210A/ko not_active Abandoned
- 2000-02-28 JP JP2000052551A patent/JP2000252208A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
TW440748B (en) | 2001-06-16 |
DE19908526A1 (de) | 2000-08-31 |
EP1031882A3 (en) | 2003-10-29 |
US6770894B1 (en) | 2004-08-03 |
JP2000252208A (ja) | 2000-09-14 |
EP1031882A2 (en) | 2000-08-30 |
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Legal Events
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Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20000226 |
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Patent event code: PA02012R01D Patent event date: 20041125 Comment text: Request for Examination of Application Patent event code: PA02011R01I Patent event date: 20000226 Comment text: Patent Application |
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PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20060322 Patent event code: PE09021S01D |
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E701 | Decision to grant or registration of patent right | ||
PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20060726 |
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NORF | Unpaid initial registration fee | ||
PC1904 | Unpaid initial registration fee |