KR20000017962U - Test piece holder for semiconductor scanning electron microscope - Google Patents
Test piece holder for semiconductor scanning electron microscope Download PDFInfo
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- KR20000017962U KR20000017962U KR2019990003697U KR19990003697U KR20000017962U KR 20000017962 U KR20000017962 U KR 20000017962U KR 2019990003697 U KR2019990003697 U KR 2019990003697U KR 19990003697 U KR19990003697 U KR 19990003697U KR 20000017962 U KR20000017962 U KR 20000017962U
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 238000012360 testing method Methods 0.000 title claims description 5
- 230000002950 deficient Effects 0.000 abstract description 5
- 230000007547 defect Effects 0.000 description 3
- 238000010998 test method Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
본 고안은 반도체 분석장비의 시편홀더 구조에 관한 것으로, 종래의 SEM장비는 그 특성상 40°이상의 경사(tilt) 이미지를 얻을 수가 없기 때문에 해당 웨이퍼의 특정 불량위치를 보다 정밀하게 단면해석할 수 없다는 문제점이 있었던 바, 본 고안에서는 분석용 시편이 미리 소정 각도로 기울어져서 홀더몸체에 고정되도록 하여 장비자체의 기울어짐 각도에다 분석용 시편의 기울어짐 각도가 합하여져 분석할 수 있도록 상기한 홀더몸체의 상면에 경사부가 구비되어 이루어짐으로써, 평면시편의 이미지 각도가 현저하게 확대되어 평면시편의 불량위치를 정밀하게 관찰할 수 있다.The present invention relates to the structure of a specimen holder of a semiconductor analysis device, and the conventional SEM device cannot obtain a tilt image of more than 40 ° due to its characteristics, so that it is not possible to accurately cross-section a specific defective location of the wafer. In the present invention, the analytical specimen was inclined at a predetermined angle in advance to be fixed to the holder body so that the inclination angle of the equipment and the inclination angle of the analytical specimen were added to analyze the upper surface of the holder body. Since the inclined portion is provided in the image angle of the planar specimen is remarkably enlarged, it is possible to accurately observe the defective position of the planar specimen.
Description
본 고안은 웨이퍼 등의 테스트에 이용되는 평면시편의 홀더에 관한 것으로, 특히 웨이퍼의 특정 불량위치를 보다 정확하게 단면해석할 수 있는 반도체 분석장비의 시편홀더 구조에 관한 것이다.The present invention relates to a holder of a planar specimen used for testing a wafer, and more particularly, to a specimen holder structure of a semiconductor analysis device capable of more accurately cross-sectional analysis of a specific defective position of a wafer.
일반적으로 웨이퍼의 접합깊이 또는 막의 두께를 측정하기 위한 웨이퍼 테스트중의 하나로서, 주사형 전자현미경(Scanning Electron Microscope;SEM)을 사용한 웨이퍼 테스트 방법이 사용되고 있다.In general, as one of the wafer tests for measuring the wafer depth or the film thickness, a wafer test method using a scanning electron microscope (SEM) is used.
이러한 웨이퍼 테스트 방법은 측정하기 위한 웨이퍼의 단면을 경사지도록 연마하고 나서 그 부분을 착색하여 접합깊이를 선화시킨 다음, 그 접합부를 웨이퍼 표면에 수직으로 놓고 SEM 사진을 찍게 되며, 이 에스이엠 사진과 SEM의 배율로부터 접합깊이를 알아낼 수 있도록 하는 것으로, 상기 SEM의 조사(Illumination)에 대한 소스는 웨이퍼 표면에 주사하는 전자빔이며, 표면에 부딪혀서 튀어나온 2차 전자가 모여서 소정의 화상을 이루게 된다.In the wafer test method, the cross section of the wafer to be measured is inclined to be inclined, then the part is colored to line the depth of the joint, and then the SEM is placed vertically on the surface of the wafer, and the SEM image is taken. The depth of the joint can be determined from the magnification of the source. The source for irradiation of the SEM is an electron beam scanning on the wafer surface, and secondary electrons protruding from the surface of the wafer are collected to form a predetermined image.
여기서, 상기 웨이퍼의 특정 불량위치를 분석하기 위하여는 평면시편에 포커싱 이온빔(Focing Ion Beam;FIB)에 의한 단면을 형성하고 나서 브로큰(Broken) SEM 장치를 이용하여 평면시편의 단면외관을 분석하는 것이었다.Here, in order to analyze the specific defect position of the wafer, the cross section by focusing ion beam (FIB) was formed on the planar specimen, and then the cross-sectional appearance of the planar specimen was analyzed by using a broken SEM device. .
즉, 상기 FIB 단면의 해상도와 외관각도(45°)에는 일정한 한계가 있어 FIB로 평면시편의 단면을 제작하고 나서 그 평면시편을 SEM에 로딩시켜 분석을 실시하게 되면 해상도 문제를 어느 정도는 극복할 수 있었다.In other words, the resolution and appearance angle (45 °) of the cross section of the FIB have a certain limit. Therefore, if the cross section of the planar specimen is fabricated with FIB and the planar specimen is loaded into the SEM and analyzed, the resolution problem is somewhat overcome. Could.
그러나, 상기와 같은 종래 SEM장비는 도 1a 및 도 1b에 도시된 바와 같이, 그 특성상 평면시편의 시편홀더(1)가 40°이상의 경사(tilt) 이미지를 얻을 수가 없기 때문에 해당 웨이퍼(W)의 특정 불량위치를 보다 정밀하게 단면해석할 수 없다는 문제점이 있었다.However, in the conventional SEM apparatus as described above, as shown in FIGS. 1A and 1B, the specimen holder 1 of the planar specimen cannot obtain a tilt image of 40 ° or more because of its characteristics. There was a problem that it is not possible to accurately cross-section specific defect locations.
따라서, 본 고안은 상기와 같은 종래 에스이엠 장비가 가지는 문제점을 감안하여 안출한 것으로, 40°이상의 경사 이미지를 얻을 수 있도록 하여 해당 웨이퍼의 특정 불량위치를 정밀하게 단면해석할 수 있는 반도체 분석장비의 시편홀더 구조를 제공하려는데 본 고안의 목적이 있다.Therefore, the present invention was conceived in view of the problems of the conventional SM equipment as described above, and it is possible to obtain an inclination image of 40 ° or more, so that the accurate analysis of the specific defect position of the wafer can be accurately analyzed. It is an object of the present invention to provide a specimen holder structure.
도 1a는 종래 시편홀더의 일례를 보인 사시도.Figure 1a is a perspective view showing an example of a conventional specimen holder.
도 1b는 도 1a의 "A - A"단면도.FIG. 1B is a sectional view taken along the line “A-A” of FIG. 1A.
도 2a는 본 고안 시편홀더의 일례를 보인 사시도.Figure 2a is a perspective view showing an example of the present invention specimen holder.
도 2b는 도 1a의 "B - B"단면도.FIG. 2B is a cross-sectional view taken along line “B-B” of FIG. 1A.
** 도면의 주요 부분에 대한 부호의 설명 **** Description of symbols for the main parts of the drawing **
10 : 홀더몸체 10a : 절개면10: holder body 10a: incision surface
11 : 경사부 W : 평면시편11: inclined portion W: flat specimen
이와 같은 목적을 달성하기 위하여, 분석용 시편을 일정 각도의 범위내에서 기울여 분석할 수 있는 반도체 분석장비의 시편홀더에 있어서 ; 상기 분석용 시편이 미리 소정 각도로 기울어져서 홀더몸체에 고정되도록 하여 장비자체의 기울어짐 각도에다 분석용 시편의 기울어짐 각도가 합하여져 분석할 수 있도록 상기한 홀더몸체의 상면에 경사부가 구비되어 이루어지는 것을 특징으로 하는 반도체 분석장비의 시편홀더 구조가 제공된다.In order to achieve the above object, in the specimen holder of the semiconductor analysis equipment that can be analyzed by tilting the analysis specimen within a certain angle range; The analysis specimen is inclined at a predetermined angle in advance to be fixed to the holder body so that the inclination portion is provided on the upper surface of the holder body so that the inclination angle of the equipment itself and the inclination angle of the analysis specimen are combined and analyzed. A specimen holder structure of a semiconductor analysis device is provided.
이하, 본 고안에 의한 반도체 분석장비의 시편홀더 구조를 첨부된 도면에 의거하여 상세히 설명한다.Hereinafter, a specimen holder structure of a semiconductor analysis device according to the present invention will be described in detail with reference to the accompanying drawings.
도 2a는 본 고안 시편홀더의 일례를 보인 사시도이고, 도 2b는 도 1a의 "B - B"단면도이다.Figure 2a is a perspective view showing an example of the specimen holder of the subject innovation, Figure 2b is a cross-sectional view "B-B" of Figure 1a.
이에 도시된 바와 같이, 본 고안에 의한 반도체 분석장비의 시편홀더는 분석용 시편을 일정 각도의 범위내에서 기울여 분석할 수 있는 것으로, 상기 분석용 시편이 미리 소정 각도로 기울어져서 홀더몸체(10)에 양면접착제(미도시) 등에 의해 고정되도록 하여 장비자체의 기울어짐 각도에다 분석용 시편(W)의 기울어짐 각도가 합하여져 분석할 수 있도록 상기한 홀더몸체(10)의 상면에 경사부(11)가 구비되어 이루어진다.As shown in this, the specimen holder of the semiconductor analysis device according to the present invention can be analyzed by tilting the analysis specimen within a predetermined angle range, the analysis specimen is inclined at a predetermined angle in advance, the holder body 10 The inclination part 11 on the upper surface of the holder body 10 so that the inclination angle of the equipment itself and the inclination angle of the specimen for analysis (W) are combined to be fixed by a double-sided adhesive (not shown). ) Is provided.
상기 경사부(11)는 홀더몸체(10)의 양측단부를 일측면에서 반대측면쪽으로 절개하되 그 절개편(미부호)이 홀더몸체(10)로부터 완전히 절개되지는 않은 위치에서 절곡하여 소정 각도로 경사지게 형성된다.The inclined portion 11 inclines both end portions of the holder body 10 from one side to the opposite side, but the cut piece (unsigned) is bent at a position not completely cut from the holder body 10 at a predetermined angle. It is formed to be inclined.
또한, 상기 경사부(11)의 각도와 분석용 시편(W)의 기울어짐 각도의 합이 90°미만이 되도록 하는 것이 바람직하다. 즉, 통상 분석용 시편(W)의 기울어짐 각도는 SEM의 경우 약 40°정도가 되므로 홀더(10)의 경사부(11) 각도는 45°정도가 되게 하여 시편의 총 기울어짐 각도는 85°정도가 되게 한다.In addition, the sum of the angle of the inclination portion 11 and the inclination angle of the analysis specimen (W) is preferably less than 90 °. That is, since the inclination angle of the specimen for analysis (W) is about 40 ° in the case of the SEM, the inclination part 11 of the holder 10 is about 45 ° so that the total inclination angle of the specimen is 85 °. Let it be enough.
도면중 미설명 부호인 10a는 절개면이다.In the figure, reference numeral 10a is an incision surface.
상기와 같은 본 고안에 의한 반도체 분석장비의 시편홀더 구조는 다음과 같은 작용효과를 갖는다.The specimen holder structure of the semiconductor analysis device according to the present invention as described above has the following effects.
즉, 상기 홀더몸체(10)의 경사부(11)에 샘플용 평면시편(W)을 올려놓고 고정을 시키게 되면, 그 홀더몸체(10)를 포함하는 시편홀더(미도시)가 챔버(미도시)의 내부로 안내되어 로딩되고 나서 소정의 구동수단(미도시)에 의해 시편홀더가 평면시편(W)과 함께 회전을 하면서 분석작업을 하게 된다.That is, when the sample plane specimen W is placed on the inclined portion 11 of the holder body 10 and fixed, the specimen holder (not shown) including the holder body 10 is a chamber (not shown). After being loaded and guided into the inside, the specimen holder is rotated together with the planar specimen (W) by a predetermined driving means (not shown) for analysis.
이때, 상기 시편홀더(미도시)의 상면에는 45°정도로 미리 경사부(11)가 형성되어 그 경사부(11)에 평면시편(W)을 얹어 소정의 분석작업을 실시하게 되는데, 이 SEM장비는 통상 40°정도 평면시편(W)을 기울여 분석작업을 실시하게 되므로, 결과적으로 평면시편(W)의 이미지 각도가 85°까지 확대되어 평면시편(W)의 불량위치를 정밀하게 관찰할 수 있게 되는 것이다.At this time, the inclined portion 11 is formed in advance on the upper surface of the specimen holder (not shown) by about 45 ° and the planar specimen (W) is placed on the inclined portion 11 to perform a predetermined analysis work. Since the analysis is usually performed by tilting the planar specimen (W) about 40 °, the image angle of the planar specimen (W) is enlarged to 85 °, so that the defective position of the planar specimen (W) can be accurately observed. Will be.
이상에서 설명한 바와 같이, 본 고안에 의한 반도체 분석장비의 시편홀더 구조는 상기 분석용 시편이 미리 소정 각도로 기울어져서 홀더몸체에 고정되도록 하여 장비자체의 기울어짐 각도에다 분석용 시편의 기울어짐 각도가 합하여져 분석할 수 있도록 상기한 홀더몸체의 상면에 경사부가 구비되어 이루어짐으로써, 평면시편의 이미지 각도가 현저하게 확대되어 평면시편의 불량위치를 정밀하게 관찰할 수 있다.As described above, the specimen holder structure of the semiconductor analysis device according to the present invention is such that the analysis specimen is inclined at a predetermined angle in advance and fixed to the holder body so that the tilt angle of the analysis specimen is in addition to the inclination angle of the equipment itself. Since the inclined portion is provided on the upper surface of the holder body so that it can be combined and analyzed, the image angle of the planar specimen can be remarkably enlarged to accurately observe the defective position of the planar specimen.
본 실시예에서는 평면시편에 대한 시편홀더를 예로 들었으나, 통상의 단면시편에 대한 시편홀더에서도 마찬가지로 그 단면시편을 약 5°정도 기울어지게 하면 전체적으로는 약 85°정도의 기울기가 되어 단면시편의 이미지 각도를 현저하게 확대시킬 수 있다.In this embodiment, although the specimen holder for the planar specimen is taken as an example, the specimen holder for the normal cross-section specimen is similarly tilted by about 5 ° when the specimen is inclined by about 5 °, resulting in an image of the cross-section specimen. The angle can be enlarged significantly.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019990003697U KR20000017962U (en) | 1999-03-09 | 1999-03-09 | Test piece holder for semiconductor scanning electron microscope |
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| Application Number | Priority Date | Filing Date | Title |
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| KR2019990003697U KR20000017962U (en) | 1999-03-09 | 1999-03-09 | Test piece holder for semiconductor scanning electron microscope |
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| KR20000017962U true KR20000017962U (en) | 2000-10-05 |
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| KR2019990003697U Withdrawn KR20000017962U (en) | 1999-03-09 | 1999-03-09 | Test piece holder for semiconductor scanning electron microscope |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100664855B1 (en) * | 2004-12-30 | 2007-01-03 | 동부일렉트로닉스 주식회사 | Manufacturing Method of Sample for Energy Dispersive X-ray Spectroscopy |
-
1999
- 1999-03-09 KR KR2019990003697U patent/KR20000017962U/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100664855B1 (en) * | 2004-12-30 | 2007-01-03 | 동부일렉트로닉스 주식회사 | Manufacturing Method of Sample for Energy Dispersive X-ray Spectroscopy |
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Comment text: Application for Utility Model Registration Patent event code: UA01011R08D Patent event date: 19990309 |
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