JPH05291195A - Thin film processing apparatus and method - Google Patents
Thin film processing apparatus and methodInfo
- Publication number
- JPH05291195A JPH05291195A JP4088908A JP8890892A JPH05291195A JP H05291195 A JPH05291195 A JP H05291195A JP 4088908 A JP4088908 A JP 4088908A JP 8890892 A JP8890892 A JP 8890892A JP H05291195 A JPH05291195 A JP H05291195A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- processing
- thin film
- ion
- ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000012545 processing Methods 0.000 title claims abstract description 116
- 239000010409 thin film Substances 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims description 15
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 14
- 230000001678 irradiating effect Effects 0.000 claims abstract description 13
- 238000001514 detection method Methods 0.000 claims abstract description 7
- 150000002500 ions Chemical class 0.000 claims description 84
- 230000005540 biological transmission Effects 0.000 claims description 11
- 229910001338 liquidmetal Inorganic materials 0.000 claims description 5
- 238000003672 processing method Methods 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 2
- 230000005855 radiation Effects 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 18
- 238000010586 diagram Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000003754 machining Methods 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- CPBQJMYROZQQJC-UHFFFAOYSA-N helium neon Chemical group [He].[Ne] CPBQJMYROZQQJC-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012764 semi-quantitative analysis Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
(57)【要約】
【構成】 試料にイオンビームを照射して加工するイオ
ン照射手段１１，１２、試料の加工速度または異種材料
間の加工速度の選択比を変える反応性ガスを導入するガ
ス導入系３１、前記照射により試料から放射される二次
電子を検出して加工対象の表面画像を得る検出手段２
１，２２、これから出力される試料の位置制御信号を受
けて試料の位置を変更及び固定する試料位置決め手段４
１，４２、試料の加工終了点を検出する加工終点検出手
段５１，５２とを備えたもの。
【効果】 極微小の所望の領域を高精度に加工損傷なく
所望の厚さに薄膜化できる。
(57) [Summary] [Structure] Ion irradiation means 11 and 12 for irradiating and processing a sample with an ion beam, and gas introduction for introducing a reactive gas that changes the processing speed of the sample or the selection ratio of the processing speed between different materials. System 31, detection means 2 for detecting secondary electrons emitted from the sample by the irradiation to obtain a surface image of a processing target
1, 22 and sample positioning means 4 for changing and fixing the position of the sample in response to the sample position control signal outputted from the sample
1, 42, and processing end point detecting means 51, 52 for detecting the processing end point of the sample. [Effects] It is possible to accurately form a thin film in a desired region with a high precision and without damage.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、特定の領域を高精度に
薄膜にするための薄膜加工装置及び方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film processing apparatus and method for forming a thin film in a specific region with high accuracy.
【０００２】[0002]
【従来の技術】近年、材料、デバイス、プロセスの多機
能化、高性能化に伴って特定の極微小領域の分析や構造
解析が重要になっている。一方、極微小部の評価には透
過電子顕微鏡が広く使用される様になっている。透過電
子顕微鏡で評価するには、試料を薄膜化する必要があ
る。しかし、”電子顕微鏡”１６４〜１７５ペ−ジ（共
立出版１９８２年発行）に記載されている従来の手法で
は観察したい極微小の特定の領域を薄膜化するのが困難
であり、透過電子顕微鏡による評価の大きな欠点となっ
ていた。また、薄膜試料を形成する場合、試料に加工よ
る損傷が生じ、欠陥や歪の正確な評価が出来ないという
欠点もあった。近年、集束イオンビ−ム装置を用いた手
法が第４７回日本電子顕微鏡学会（講演番号２３−III
−０５、１９９１年５月）で報告されている。2. Description of the Related Art In recent years, as materials, devices, and processes have become more multifunctional and have higher performance, it has become important to analyze a specific extremely small area and structure. On the other hand, transmission electron microscopes have come to be widely used for evaluation of extremely small portions. In order to evaluate with a transmission electron microscope, it is necessary to thin the sample. However, it is difficult to form a thin film in a very small specific region to be observed by the conventional method described in "Electron Microscope" pages 164 to 175 (published by Kyoritsu Shuppan 1982). It was a big flaw in the evaluation. Further, when forming a thin film sample, there is a drawback that the sample is damaged due to processing and the defect and strain cannot be accurately evaluated. In recent years, the method using the focused ion beam device has been adopted in the 47th Japan Electron Microscope Society (lecture number 23-III
-05, May 1991).
【０００３】[0003]
【発明が解決しようとする課題】上記の如く、従来の手
法では観察したい極微小の特定の領域を薄膜化するのが
困難であり、透過電子顕微鏡による評価の大きな欠点と
なっていた。また、薄膜試料を形成する場合、試料に加
工よる損傷が生じ、欠陥や歪の正確な評価が出来ないと
いう欠点もあった。As described above, it is difficult for the conventional method to thin a specific region of an extremely small size to be observed, which is a major drawback of evaluation by a transmission electron microscope. Further, when forming a thin film sample, there is a drawback that the sample is damaged due to processing and the defect and strain cannot be accurately evaluated.
【０００４】本発明の目的は、特定の領域を高精度に加
工損傷なく薄膜化する装置及び方法を提供することにあ
る。An object of the present invention is to provide an apparatus and method for forming a thin film on a specific region with high accuracy and without processing damage.
【０００５】[0005]
【課題を解決するための手段】本発明では、特定の領域
を高精度に加工するために加工に用いる集束イオンビ−
ムを利用して対象物表面の像を観察しながら加工領域の
位置を高精度に決める機構、異種材料間の加工速度の選
択比を任意に変えられるイオンによる加工機構及び特定
領域が所望の厚さに加工されていることを検出する機構
を具備している。更に、加工損傷を低減するためにイオ
ンのチャ−ジアップを防止したり、化学的加工を行う機
構を具備している。According to the present invention, a focused ion beam used for machining a specific region with high precision is used.
A mechanism that determines the position of the processing region with high accuracy while observing the image of the surface of the object using a laser, an ion processing mechanism that can arbitrarily change the selection ratio of the processing speed between different materials, and the desired thickness of the specific region It is equipped with a mechanism to detect that it is being processed. Further, in order to reduce processing damage, it is provided with a mechanism for preventing charge up of ions and for performing chemical processing.
【０００６】すなわち本発明は、試料にイオンビームを
照射して加工するイオン照射手段と、前記イオンビーム
の照射により試料から放射される二次電子及び／又は二
次イオンを検出して加工対象の表面画像を得る検出手段
と、この検出手段から出力される試料の位置制御信号を
受けて載置された試料の位置を変更及び固定する試料位
置決め手段と、試料の加工終了を検出する加工終点検出
手段と、を備えた薄膜加工装置である。That is, according to the present invention, an ion irradiation means for irradiating a sample with an ion beam for processing, and a secondary electron and / or a secondary ion emitted from the sample by the irradiation of the ion beam are detected to be an object to be processed. Detecting means for obtaining a surface image, sample positioning means for changing and fixing the position of the mounted sample in response to the sample position control signal output from the detecting means, and processing end point detection for detecting the end of processing of the sample Means, and a thin film processing apparatus.
【０００７】また本発明は、試料にイオンビームを照射
して加工するイオン照射手段と、試料の加工速度又は異
種材料間の加工速度の選択比をかえる反応性ガスを試料
加工部分に導入するガス導入手段と、前記イオンビーム
の照射により試料から放射される二次電子及び／又は二
次イオンを検出して加工対象の表面画像を得る検出手段
と、この検出手段から出力される試料の位置制御信号を
受けて試料台に載置された試料の位置を変更及び固定す
る試料位置決め手段と、試料の加工終了点を検出する加
工終点検出手段と、を備えた薄膜加工装置である。The present invention also provides an ion irradiation means for irradiating and processing a sample with an ion beam, and a gas for introducing a reactive gas into the sample processing portion, the reactive gas changing the processing speed of the sample or the processing speed between different materials. Introducing means, detecting means for detecting secondary electrons and / or secondary ions emitted from the sample by irradiation of the ion beam to obtain a surface image of a processing target, and position control of the sample output from the detecting means The thin film processing apparatus includes a sample positioning unit that receives and receives a signal and changes and fixes the position of the sample placed on the sample table, and a processing end point detection unit that detects the processing end point of the sample.
【０００８】前記薄膜加工装置において、加工終点検出
手段は、光源と、この光源から射光された光が試料を透
過する透過量を検出する検出器を備えたもの、電子銃
と、この電子銃から放たれるの電子線が試料を透過する
透過量を検出する検出器を備えたもの、又は、前記二次
イオンの放射量又は加工部分の画像観察で行うものがよ
い。また、試料台は温度可変に形成されたものがよい。
また、イオン照射手段は液体金属を用いた収束イオンビ
−ム系又はガスを用いたイオン系であるものがよい。ま
た、イオン照射手段は、微細加工用のイオン照射系と、
広い面積を高速加工するイオン照射系の２つを備え、試
料台は１８０度回転可能に形成されたものがよい。ま
た、加工用イオン照射手段と表面観察用電子銃とを一体
化したものがよい。In the thin film processing apparatus, the processing end point detecting means is provided with a light source and a detector for detecting the amount of transmission of light emitted from the light source through the sample, an electron gun, and the electron gun. It is preferable to use a detector equipped with a detector for detecting the amount of transmission of the emitted electron beam through the sample, or to observe the radiation amount of the secondary ions or image observation of the processed portion. Further, it is preferable that the sample table has a variable temperature.
Further, the ion irradiation means is preferably a focused ion beam system using liquid metal or an ion system using gas. Further, the ion irradiation means is an ion irradiation system for fine processing,
It is preferable that the sample stage is provided with two ion irradiation systems that process a large area at high speed, and that the sample stage can be rotated 180 degrees. Further, it is preferable that the processing ion irradiation means and the surface observation electron gun are integrated.
【０００９】また本発明は、イオン又は電子により試料
表面を観察し加工場所を合わせる工程と、高電流密度の
イオンで試料を加工する工程と、反応性ガスを導入して
イオン又はレ−ザで加工する工程及び／又は低電流密度
のイオンで加工する工程と、を含むことを特徴とした薄
膜加工方法である。Further, according to the present invention, the step of observing the surface of the sample with ions or electrons to adjust the processing location, the step of processing the sample with ions of high current density, and the step of introducing the reactive gas into the ion or laser. A thin film processing method characterized by including a processing step and / or a step of processing with ions having a low current density.
【００１０】また本発明は、イオンまた電子により試料
表面を観察し加工場所を合わせて位置合わせ用のマ−ク
を該試料に加工する工程、このマ−クの反対側からをイ
オンを照射して加工する工程と、この工程で加工した領
域の特定部分のみを更に集束したイオンで加工する工程
と、を含むことを特徴とした薄膜加工方法である。According to the present invention, the step of observing the sample surface with ions or electrons and aligning the processing locations to process a positioning mark on the sample, irradiating ions from the opposite side of the mark. And a step of processing only a specific part of the region processed in this step with further focused ions.
【００１１】[0011]
【作用】収束された微細なイオンビ−ムを対象物に照射
することによって、対象物が加工される。それと同時に
表面から出てくる二次イオンまたは二次電子を検出すれ
ば、対象物表面の画像を得ることが出来る。従って、こ
の像を観察しながら対象物を高精度に移動すれば加工領
域を高精度に決定できると共に特定の極微小領域を加工
できる。また、反応性イオンエッチング等を利用すれば
異種材料間の加工速度の選択比を任意に変えることが出
来るので、対象物の任意の材料だけを選択的に除去した
り、逆に選択比を１（異種材料間の加工速度を同じ）と
して多層構造の薄膜化を均一にする事が出来る。更に、
電子シャワ−や対象物の加熱によるイオンのチャ−ジア
ップの防止や反応性イオンエッチングによるイオン照射
損傷を防止することにより薄膜化に伴う対象物の変化を
なくすことができる。The object is processed by irradiating the object with the focused fine ion beam. At the same time, by detecting secondary ions or secondary electrons emerging from the surface, an image of the surface of the object can be obtained. Therefore, if the object is moved with high accuracy while observing this image, the processing area can be determined with high accuracy and a specific extremely small area can be processed. Further, by using reactive ion etching or the like, the selection ratio of the processing speed between different kinds of materials can be arbitrarily changed, so that only the arbitrary material of the object is selectively removed, or conversely the selection ratio is set to 1 (The processing speed between different materials is the same), and it is possible to make the thinning of the multilayer structure uniform. Furthermore,
By preventing the charge-up of ions due to the heating of the electron shower or the object and preventing the ion irradiation damage due to the reactive ion etching, the change of the object due to the thinning can be eliminated.
【００１２】[0012]
【実施例】以下、図面に示した実施例について本発明を
説明する。図１は本発明の薄膜加工装置の一つの基本構
成を示す構成図である。この装置は、試料にイオンビー
ムを照射して加工するイオン照射手段としてのイオン照
射系１１とその制御系１２、試料の加工速度または異種
材料間の加工速度の選択比を変える反応性ガスを試料加
工部分に導入するガス導入手段３１、前記イオンビーム
の照射により試料から放射される二次電子及び／又は二
次イオンを検出して加工対象の表面画像を得る検出手段
としての二次電子及び／又は二次イオン検出用の検出器
２１とそのディスプレイ２２、この検出手段から出力さ
れる試料の位置制御信号を受けて試料台４１に載置され
た試料の位置を変更及び固定する試料位置決め手段とし
ての移動及び回転可能な試料台４１及びその制御系４
２、試料の加工終了点を検出する加工終点検出手段とし
ての光源５１とその透過光の検出器５２とを備えたもの
である。The present invention will be described below with reference to the embodiments shown in the drawings. FIG. 1 is a configuration diagram showing one basic configuration of a thin film processing apparatus of the present invention. This apparatus uses an ion irradiation system 11 and its control system 12 as an ion irradiation means for irradiating a sample with an ion beam to process a reactive gas that changes the processing speed of the sample or the processing speed selection ratio between different materials. A gas introducing means 31 to be introduced into a processing portion, a secondary electron as a detecting means for detecting a secondary electron and / or a secondary ion emitted from a sample by the irradiation of the ion beam to obtain a surface image of a processing object, and / or Alternatively, as a detector 21 for detecting secondary ions and its display 22, as sample positioning means for changing and fixing the position of the sample placed on the sample stage 41 in response to the sample position control signal output from this detecting means. Of movable and rotatable sample stage 41 and its control system 4
2. A light source 51 as a processing end point detecting means for detecting the processing end point of the sample and a detector 52 of the transmitted light thereof are provided.
【００１３】すなわち、本実施例は、試料の表面観察と
加工のためのイオン照射系１１とその制御系１２、像観
察のための二次電子又は二次イオンの検出器２１とディ
スプレイ２２、加工速度及び選択比を変えたり、加工損
傷を低減するための反応性エッチングを行うのに使用す
るガス導入系３１、試料の高精度位置合わせ、加工損傷
の低減のための温度可変機能及び傾斜機能を持ち合わせ
た試料台４１及びその制御系４２、加工後の試料の厚さ
が所望の厚さであることを光の透過量から検出するため
の光源５１及び検出器５２とその情報を加工系に転送
し、加工を制御する信号系５３、加工室６０を真空にす
る真空系７０からなっている。That is, in the present embodiment, the ion irradiation system 11 and its control system 12 for observing and processing the surface of the sample, the detector 21 and the display 22 of the secondary electrons or secondary ions for observing the image, and the processing. The gas introduction system 31 used for changing the speed and the selection ratio and performing the reactive etching for reducing the processing damage, the highly accurate alignment of the sample, the temperature variable function and the tilt function for reducing the processing damage are provided. The sample table 41 and its control system 42 that were held together, the light source 51 and the detector 52 for detecting the desired thickness of the processed sample from the amount of transmitted light, and the information thereof are transferred to the processing system. The machining system 60 includes a signal system 53 for controlling the machining and a vacuum system 70 for vacuuming the machining chamber 60.
【００１４】イオン照射系１１はイオンビ−ム径を細く
絞れる液体金属イオン源を用いた集束イオンビ−ムが好
ましい。イオン照射系１１から試料に照射された一次イ
オンによって試料から出た二次電子又は二次イオンは検
出器２１によって検出され、ディスプレイ２２に表面観
察像が表示される。ガス導入系３１は塩素系（Ａｌに対
してＣＣｌ4 ，Ｃｌ2等）やフッ素系ガス（ＳｉＯ2に対
してＣＨＦ3 ,ＣＦ4）等を導入することによって試料の
加工面に存在する各種材料の加工速度を変えることがで
きる。The ion irradiation system 11 is preferably a focused ion beam using a liquid metal ion source capable of narrowing the ion beam diameter. Secondary electrons or secondary ions emitted from the sample by the primary ions with which the sample is irradiated from the ion irradiation system 11 are detected by the detector 21, and a surface observation image is displayed on the display 22. The gas introduction system 31 introduces a chlorine-based gas (CCl 4 , Cl 2 or the like for Al) or a fluorine-based gas (CHF 3 , CF 4 for SiO 2 ) or the like to introduce various materials existing on the processed surface of the sample. The processing speed of can be changed.
【００１５】試料台４１はヒ−タ−や赤外ランプなどに
よって加熱されたり、液体窒素などによって冷却され、
温度が制御系４２で自由に変えられる。これにより加工
速度を調節できる。更に、試料台４１はｘ，ｙ，ｚ方向
に三次元的に移動でき、高精度の位置合わせが可能に形
成されている。終点検出に用いる光源５１はヘリウム−
ネオン・レ−ザやタングステン・ランプなどが用いられ
る。検出器５２はフォトディテクタなどが用いられる。
この情報は信号系５３を介して制御系１２に送られ、加
工の制御を行う。真空系７０は加工表面の汚染を避ける
ためにドライポンプが好ましい。The sample table 41 is heated by a heater or an infrared lamp or cooled by liquid nitrogen.
The temperature can be freely changed by the control system 42. This allows the processing speed to be adjusted. Further, the sample table 41 can be moved three-dimensionally in the x, y, and z directions, and is configured to enable highly accurate alignment. The light source 51 used to detect the end point is helium-
Neon laser and tungsten lamp are used. A photodetector or the like is used as the detector 52.
This information is sent to the control system 12 via the signal system 53 to control the processing. The vacuum system 70 is preferably a dry pump to avoid contamination of the processed surface.
【００１６】図２は別の実施例を示す。図１の場合と異
なり、電子銃８１及びその制御系８２が装備されてい
る。これは、試料表面に電子を照射し、イオン照射系１
１から照射されたイオンによって試料表面が正電荷にチ
ャ−ジアップし、像観察が困難になったり、試料が損傷
したりするのを防止する。更に、この電子が試料を通過
した量を検出器５２により検出し、その透過量より加工
の終点を決定する。電子銃８１は電界放出型電子銃が好
ましい。FIG. 2 shows another embodiment. Unlike the case of FIG. 1, the electron gun 81 and its control system 82 are equipped. This irradiates the sample surface with electrons, and the ion irradiation system 1
This prevents the surface of the sample from being charged up to a positive charge by the ions irradiated from No. 1 and making it difficult to observe an image and damaging the sample. Further, the detector 52 detects the amount of the electrons that have passed through the sample, and the end point of processing is determined from the amount of the transmitted electrons. The electron gun 81 is preferably a field emission type electron gun.
【００１７】図３は他の実施例で、分析機能を持ち合わ
せた装置である。すなわち、二次イオン質量分析計９１
が装備されており、イオン照射により試料から出てくる
二次イオンを二次イオン質量分析計９１に導入し、二次
イオンの同定と半定量分析を行う。更に、多層構造の試
料においてある層まで除去したい場合などの終点検出と
しての機能も有する。FIG. 3 shows another embodiment, which is an apparatus having an analysis function. That is, the secondary ion mass spectrometer 91
The secondary ion mass spectrometer 91 introduces secondary ions emitted from the sample by ion irradiation, and performs secondary ion identification and semi-quantitative analysis. Further, it also has a function of detecting an end point when it is desired to remove a certain layer in a sample having a multilayer structure.
【００１８】また、本実施例では光源５１としてレ−ザ
光源を装備しており、ガス導入系３１から塩素系やフッ
素系などのエッチングガスを導入し、レ−ザを照射すれ
ば、イオン照射の場合と異なる加工速度が得られ、加工
速度や異種材料間の選択比がより幅広く変えることがで
きる。この場合も試料の損傷が低減できる。更に、この
レ−ザ光は終点検出の光源としても使用できる。Further, in this embodiment, a laser light source is equipped as the light source 51, and if a chlorine-based or fluorine-based etching gas is introduced from the gas introduction system 31 and the laser is irradiated, ion irradiation is performed. A processing speed different from that of the above case can be obtained, and the processing speed and the selection ratio between different materials can be changed more widely. Also in this case, damage to the sample can be reduced. Further, this laser light can also be used as a light source for end point detection.
【００１９】図４はまた別の実施例で、イオン照射系を
二つ有する装置である。イオン照射系１１は微細な加工
と表面観察用のものであり、集束イオン銃である。イオ
ン照射系１５は広い面積を高速で加工するのに用いるも
のであり、アルゴンなどのガスをイオン源とするもので
ある。試料台４１は３６０度の回転が可能であり、ま
ず、イオン照射系１１を用いて表面観察を行い、加工位
置合わせを行った後、試料台４１を１８０度回転させて
イオン照射系１５で加工する。更に、試料台４１を１８
０度回転し、最終仕上げの加工をイオン照射系１１で行
うことができる。また、イオン照射系１１で加工位置合
わせ用穴などのマ−クを形成した後、イオン照射系１５
で裏面から加工することもできる。FIG. 4 shows another embodiment, which is an apparatus having two ion irradiation systems. The ion irradiation system 11 is used for fine processing and surface observation, and is a focused ion gun. The ion irradiation system 15 is used to process a large area at high speed, and uses a gas such as argon as an ion source. The sample stage 41 can be rotated by 360 degrees. First, the surface of the sample is observed using the ion irradiation system 11, the processing position is adjusted, and then the sample stage 41 is rotated by 180 degrees and processed by the ion irradiation system 15. To do. In addition, the sample table 41
The final irradiation can be performed by the ion irradiation system 11 by rotating 0 degree. In addition, after forming marks such as holes for processing alignment in the ion irradiation system 11, the ion irradiation system 15
It can also be processed from the back side.
【００２０】図５はイオン照射系１１と電子銃８１が合
体したものの実施例を示す。イオン照射系１１は加工に
用い、電子銃８１は表面観察及び終点検出に用いる。こ
れらは偏向器１６によって試料の同一場所にイオンまた
は電子を照射するようにできる。イオンで加工しながら
定期的に電子を照射することにより加工の終点検出もで
きる。FIG. 5 shows an embodiment in which the ion irradiation system 11 and the electron gun 81 are combined. The ion irradiation system 11 is used for processing, and the electron gun 81 is used for surface observation and end point detection. These can be made to irradiate the same place of a sample with an ion or an electron by the deflector 16. It is also possible to detect the end point of processing by irradiating electrons periodically while processing with ions.
【００２１】図６は本発明の装置を用いた透過電子顕微
鏡による断面観察用薄膜試料の加工プロセスを示す試料
断面図である。試料は図６（ａ）に示すごとく、基板１
１０と薄膜１１１からなる。まず、イオン又は電子を照
射し、試料表面を観察して加工領域の位置合わせを行っ
た後、試料表面に矢印Ａの方向から高電流密度のイオン
を照射し、図６（ｂ）のごとく、溝２１０、２１１を形
成する。表面を観察しながら残部３００が所定の幅にな
るまで加工する。次いで、試料を１８０度回転させ、反
応性ガスを導入しながら溝の側面２１２、２１３にイオ
ン又はレ−ザを矢印Ａの方向から照射し、図６（ｃ）の
ごとく、側面２１２、２１３を加工する。この加工より
先のイオンによる加工で生じた損傷を除去する。終点は
残部３００を透過した電子、光などの量を検出して決め
る。FIG. 6 is a sectional view of a sample showing a processing process of a thin film sample for observing a section by a transmission electron microscope using the apparatus of the present invention. The sample is a substrate 1 as shown in FIG.
10 and thin film 111. First, after irradiating ions or electrons and observing the sample surface to align the processing region, the sample surface is irradiated with ions of high current density from the direction of arrow A, as shown in FIG. Grooves 210 and 211 are formed. While observing the surface, the remaining part 300 is processed until it has a predetermined width. Next, the sample is rotated 180 degrees, and while the reactive gas is being introduced, the side surfaces 212 and 213 of the groove are irradiated with ions or a laser from the direction of the arrow A, and the side surfaces 212 and 213 are irradiated as shown in FIG. 6C. To process. The damage caused by the ion processing before this processing is removed. The end point is determined by detecting the amount of electrons, light, etc. that have passed through the remaining portion 300.
【００２２】図７は別の透過電子顕微鏡による平面観察
用薄膜試料の加工プロセスを示す試料断面図を示す。図
７（ａ）の試料１００に集束した液体金属イオン源を用
いたイオンビ−ムを照射し、試料表面を観察し、薄膜に
したい所の位置合わせを行った後、図７（ｂ）のように
位置合わせ用マ−ク２００を形成する。次いで、反対側
から高電流密度のアルゴンガスのイオンビ−ムで穴３１
０を図７（ｃ）のごとく形成する。次いで、位置合わせ
用マ−ク２００により位置合わせを行い、穴３１０の内
部の所望の領域のみを液体金属イオンを用いた集束イオ
ンビ−ム、更に、反応性ガスを導入したイオンビ−ムで
加工し、細孔４１０を得る。この加工で、残部３００が
所望の厚さになるようにする。FIG. 7 is a cross-sectional view of a sample showing a processing process of another thin film sample for plane observation by a transmission electron microscope. After irradiating the sample 100 of FIG. 7 (a) with an ion beam using a focused liquid metal ion source, observing the sample surface, and aligning where the thin film is desired, as shown in FIG. 7 (b). An alignment mark 200 is formed on the. Then, from the opposite side, a hole 31 is formed with an ion beam of high current density argon gas.
0 is formed as shown in FIG. Then, alignment is performed by the alignment mark 200, and only a desired region inside the hole 310 is processed by a focused ion beam using liquid metal ions and further an ion beam into which a reactive gas is introduced. , Pores 410 are obtained. By this processing, the remaining portion 300 is made to have a desired thickness.
【００２３】[0023]
【発明の効果】本発明によれば特定の領域を高精度に加
工損傷なく確実に薄膜化できる。すなわち、収束された
微細なイオンビ−ムを対象物に照射することによって、
対象物が加工される。それと同時に表面から出てくる二
次イオンまたは二次電子を検出すれば、対象物表面の画
像を得ることが出来る。従って、この像を観察しながら
対象物を高精度に移動すれば加工領域を高精度に決定で
きると共に特定の極微小領域を加工できる。また、反応
性イオンエッチング等を利用すれば異種材料間の加工速
度の選択比を任意に変えることが出来るので、対象物の
任意の材料だけを選択的に除去したり、逆に選択比を１
（異種材料間の加工速度を同じ）として多層構造の薄膜
化を均一にする事が出来る。According to the present invention, a thin film can be formed in a specific region with high accuracy and without damage. That is, by irradiating the target with a focused fine ion beam,
The object is processed. At the same time, by detecting secondary ions or secondary electrons emerging from the surface, an image of the surface of the object can be obtained. Therefore, if the object is moved with high accuracy while observing this image, the processing area can be determined with high accuracy and a specific extremely small area can be processed. Further, by using reactive ion etching or the like, the selection ratio of the processing speed between different kinds of materials can be arbitrarily changed, so that only the arbitrary material of the object is selectively removed, or conversely the selection ratio is set to 1
(The processing speed between different materials is the same), and it is possible to make the thinning of the multilayer structure uniform.
【図１】本発明に係る薄膜加工装置の基本構成を示す構
成図である。FIG. 1 is a configuration diagram showing a basic configuration of a thin film processing apparatus according to the present invention.
【図２】本発明に係る他の実施例の薄膜加工装置の基本
構成を示す構成図である。FIG. 2 is a configuration diagram showing a basic configuration of a thin film processing apparatus according to another embodiment of the present invention.
【図３】本発明に係る他の実施例の薄膜加工装置の基本
構成を示す構成図である。FIG. 3 is a configuration diagram showing a basic configuration of a thin film processing apparatus according to another embodiment of the present invention.
【図４】本発明に係る他の実施例の薄膜加工装置の基本
構成を示す構成図である。FIG. 4 is a configuration diagram showing a basic configuration of a thin film processing apparatus of another embodiment according to the present invention.
【図５】本発明に係る他の実施例の薄膜加工装置の基本
構成を示す構成図である。FIG. 5 is a configuration diagram showing a basic configuration of a thin film processing apparatus according to another embodiment of the present invention.
【図６】（ａ）〜（ｃ）は本発明の透過電子顕微鏡観察
用試料作成プロセスを示す工程図である。6 (a) to 6 (c) are process diagrams showing a process for preparing a sample for transmission electron microscope observation according to the present invention.
【図７】（ａ）〜（ｄ）は本発明の透過電子顕微鏡観察
用試料作成プロセスを示す工程図である。7 (a) to 7 (d) are process charts showing a sample preparation process for transmission electron microscope observation of the present invention.
１１ イオン照射系 １２ 制御系 １５ イオン照射系 １６ 偏向器 ２１ 検出器 ２２ ディスプレイ ３１ ガス導入系 ４１ 試料台 ５１ 光源 ５２ 検出器 ６０ 加工室 ７０ 真空系 ８１ 電子銃 ９１ 二次イオン質量計 １１０ 基板 １１１ 薄膜 ２００ 位置合わせ用マ−ク ３１０ 穴 ４１０ 細孔 11 Ion irradiation system 12 Control system 15 Ion irradiation system 16 Deflector 21 Detector 22 Display 31 Gas introduction system 41 Sample stage 51 Light source 52 Detector 60 Processing room 70 Vacuum system 81 Electron gun 91 Secondary ion mass meter 110 Substrate 111 Thin film 200 Mark for alignment 310 Hole 410 Pore
Claims (11)
イオン照射手段と、前記イオンビームの照射により試料
から放射される二次電子及び／又は二次イオンを検出し
て加工対象の表面画像を得る検出手段と、この検出手段
から出力される試料の位置制御信号を受けて載置された
試料の位置を変更及び固定する試料位置決め手段と、試
料の加工終了を検出する加工終点検出手段と、を備えた
薄膜加工装置。1. An ion irradiation means for irradiating a sample with an ion beam for processing, and a secondary electron and / or secondary ion emitted from the sample by the irradiation of the ion beam are detected to form a surface image of a processing target. Detecting means for obtaining, sample positioning means for changing and fixing the position of the mounted sample in response to the position control signal of the sample output from the detecting means, processing end point detecting means for detecting the end of processing of the sample, Thin film processing equipment equipped with.
イオン照射手段と、試料の加工速度又は異種材料間の加
工速度の選択比を変える反応性ガスを試料加工部分に導
入するガス導入手段と、前記イオンビームの照射により
試料から放射される二次電子及び／又は二次イオンを検
出して加工対象の表面画像を得る検出手段と、この検出
手段から出力される試料の位置制御信号を受けて試料台
に載置された試料の位置を変更及び固定する試料位置決
め手段と、試料の加工終了点を検出する加工終点検出手
段と、を備えた薄膜加工装置。2. An ion irradiation means for irradiating a sample with an ion beam for processing, and a gas introduction means for introducing a reactive gas for changing a processing rate of the sample or a processing rate selection ratio between different materials into a sample processing portion. A detection means for detecting secondary electrons and / or secondary ions emitted from the sample by the irradiation of the ion beam to obtain a surface image of a processing target; and a position control signal for the sample output from the detection means. A thin film processing apparatus including sample positioning means for changing and fixing the position of a sample placed on a sample table, and processing end point detecting means for detecting the processing end point of the sample.
おいて、加工終点検出手段は、光源と、この光源から射
光された光が試料を透過する透過量を検出する検出器を
備えたものであることを特徴とする薄膜加工装置。3. The thin film processing apparatus according to claim 1 or 2, wherein the processing end point detecting means includes a light source and a detector for detecting a transmission amount of light emitted from the light source through the sample. A thin film processing apparatus characterized in that
おいて、加工終点検出手段は、電子銃と、この電子銃か
ら放たれるの電子線が試料を透過する透過量を検出する
検出器を備えたものであることを特徴とする薄膜加工装
置。4. The thin film processing apparatus according to claim 1, wherein the processing end point detecting means detects an electron gun and an amount of transmission of an electron beam emitted from the electron gun through the sample. A thin film processing apparatus comprising:
おいて、加工終点検出手段は、前記二次イオンの放射量
又は加工部分の画像観察で行うことを特徴とする薄膜加
工装置。5. The thin film processing apparatus according to claim 1, wherein the processing end point detecting means performs the radiation amount of the secondary ions or an image observation of a processed portion.
工装置において、試料台は温度可変に形成されたことを
特徴とする薄膜加工装置。6. The thin film processing apparatus according to claim 1, wherein the sample stage is formed to have a variable temperature.
工装置において、イオン照射手段は液体金属を用いた集
束イオンビ−ム系又はガスを用いたイオン系であること
を特徴とした薄膜加工装置。7. A thin film processing apparatus according to claim 1, wherein the ion irradiation means is a focused ion beam system using liquid metal or an ion system using gas. Processing equipment.
工装置において、イオン照射手段は、微細加工用のイオ
ン照射系と、広い面積を高速加工するイオン照射系の２
つを備え、試料台は１８０度回転可能に形成されたこと
を特徴とする薄膜加工装置。8. The thin film processing apparatus according to claim 1, wherein the ion irradiation means comprises an ion irradiation system for fine processing and an ion irradiation system for high speed processing of a large area.
The thin film processing apparatus is characterized in that the sample table is provided so as to be rotatable by 180 degrees.
工装置において、加工用イオン照射手段と表面観察用電
子銃とを一体化したことを特徴とする薄膜加工装置。9. The thin film processing apparatus according to claim 4, wherein the processing ion irradiation means and the surface observation electron gun are integrated.
し加工場所を合わせる工程と、高電流密度のイオンで試
料を加工する工程と、反応性ガスを導入してイオン又は
レ−ザで加工する工程及び／又は低電流密度のイオンで
加工する工程と、を含むことを特徴とした薄膜加工方
法。10. A step of observing the surface of a sample with ions or electrons to adjust the processing location, a step of processing the sample with ions having a high current density, and a step of processing with a gas or a reactive gas by ion or laser. And / or a step of processing with ions having a low current density, and a thin film processing method.
し加工場所を合わせて位置合わせ用のマ−クを該試料に
加工する工程、このマ−クの反対側からをイオンを照射
して加工する工程と、この工程で加工した領域の特定部
分のみを更に集束したイオンで加工する工程と、を含む
ことを特徴とした薄膜加工方法。11. A step of observing a sample surface with ions or electrons and aligning a processing place to process a positioning mark on the sample, and irradiating ions from the opposite side of this mark for processing. A thin film processing method comprising: a step; and a step of processing only a specific portion of a region processed in this step with focused ions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08890892A JP3223431B2 (en) | 1992-04-09 | 1992-04-09 | Thin film processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08890892A JP3223431B2 (en) | 1992-04-09 | 1992-04-09 | Thin film processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05291195A true JPH05291195A (en) | 1993-11-05 |
| JP3223431B2 JP3223431B2 (en) | 2001-10-29 |
Family
ID=13956047
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP08890892A Expired - Lifetime JP3223431B2 (en) | 1992-04-09 | 1992-04-09 | Thin film processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3223431B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006284590A (en) * | 2005-04-04 | 2006-10-19 | Fei Co | Subsurface imaging using electron beams |
| JP2007257816A (en) * | 2006-02-22 | 2007-10-04 | Tdk Corp | Method for manufacturing magnetic recording medium |
| JP2010054409A (en) * | 2008-08-29 | 2010-03-11 | Jeol Ltd | Ion beam machining device |
| US7740903B2 (en) | 2006-02-22 | 2010-06-22 | Tdk Corporation | Method for manufacturing magnetic recording medium |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5216739B2 (en) | 2009-10-15 | 2013-06-19 | 株式会社日立ハイテクノロジーズ | Charged particle beam apparatus and film thickness measuring method |
-
1992
- 1992-04-09 JP JP08890892A patent/JP3223431B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006284590A (en) * | 2005-04-04 | 2006-10-19 | Fei Co | Subsurface imaging using electron beams |
| JP2007257816A (en) * | 2006-02-22 | 2007-10-04 | Tdk Corp | Method for manufacturing magnetic recording medium |
| US7740903B2 (en) | 2006-02-22 | 2010-06-22 | Tdk Corporation | Method for manufacturing magnetic recording medium |
| JP2010054409A (en) * | 2008-08-29 | 2010-03-11 | Jeol Ltd | Ion beam machining device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3223431B2 (en) | 2001-10-29 |
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