KR19980046574A - Manufacturing Method of Semiconductor Device - Google Patents

Abstract

The present invention relates to a method for manufacturing a semiconductor device capable of improving the reproducibility of a polysilicon resistor, comprising: forming a field oxide film by defining an active region and an inactive region on a semiconductor substrate; Sequentially forming a first insulating film, a first conductive film, and a second conductive film on the semiconductor substrate including the field oxide film; Etching the first and second conductive films to form first and second conductive film patterns for gate electrodes; Forming a second insulating film on the semiconductor substrate including the first and second conductive film patterns for the gate electrode; Forming a second conductive film on the second insulating film; Forming a photoresist pattern by defining a region where a polysilicon resistor is to be formed on the second conductive film; And etching the second conductive film, the second insulating film, and the first insulating film sequentially so that the upper portion of the second conductive film pattern and the surface of the field oxide film are exposed using the photoresist pattern as a mask. . By such a method, it is possible to prevent an increase in the dispersion of the polysilicon resistor due to the subsequent oxidation and deposition process, and thus to optimize the operating characteristics of the semiconductor device.

Description

Manufacturing Method of Semiconductor Device

The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to a method for manufacturing a semiconductor device for improving the reproducibility of a polysilicon resistor.

In recent years, in the manufacture of semiconductor devices, a lot of research has been made on not only active devices but also passive devices.

In particular, steady research is being conducted in the manufacture of capacitors and resistors. Among them, polysilicon resistors are the main factors that determine the characteristics of a device. Most of the research has focused on reducing the dispersion such as adjusting the thickness of the polysilicon film, changing the deposition temperature of the polysilicon film, or changing the type of impurities in the polysilicon film.

1 schematically illustrates the structure of a conventional semiconductor device.

Referring to FIG. 1, a field oxide film 2 is formed in the semiconductor substrate 1 by defining an active region a and an inactive region b, and a gate electrode layer 3 is formed on the active region a. And a polysilicon resistor 4 is formed on the inactive region b.

However, according to the manufacturing method of such a semiconductor device, first, the polysilicon resistor 4 is formed on the inactive region b in which the field oxide film 2 is formed, and a series of oxidation and deposition well known in the art are known. After the process of, the gate electrode layer 3 is formed on the active region a.

As a result, the oxidation process is performed on the upper portion of the polysilicon resistor 4, so that the dispersion of the polysilicon resistor 4 increases, causing a problem that the characteristics of the polysilicon resistor 4 of the semiconductor device are greatly degraded.

SUMMARY OF THE INVENTION The present invention proposed to solve the above problems has an object of the present invention to provide a method for manufacturing a semiconductor device that can improve the reproducibility of the polysilicon resistor.

1 is a vertical sectional view schematically showing the structure of a conventional semiconductor device;

2A through 2E are flowcharts sequentially showing a method of manufacturing a semiconductor device according to an embodiment of the present invention;

* Explanation of symbols on the main parts of the drawing

10 semiconductor substrate 12 field oxide film

14, 20: oxide film 16, 22: polysilicon film

18 metal silicide 24 photoresist pattern

(Configuration)

According to the present invention for achieving the above object, a process for forming a field oxide film by defining an active region and an inactive region on a semiconductor substrate; Sequentially forming a first insulating film, a first conductive film, and a second conductive film on the semiconductor substrate including the field oxide film; Etching the first and second conductive films to form first and second conductive film patterns for gate electrodes; Forming a second insulating film on the semiconductor substrate including the first and second conductive film patterns for the gate electrode; Forming a second conductive film on the second insulating film; Forming a photoresist pattern by defining a region where a polysilicon resistor is to be formed on the second conductive film; And etching the second conductive film, the second insulating film, and the first insulating film sequentially so that the upper portion of the second conductive film pattern and the surface of the field oxide film are exposed using the photoresist pattern as a mask. .

In this method, the first insulating film is an oxide film for a gate electrode, and the second insulating film is an oxide film for a gate spacer.

In this method, the first conductive film is a polysilicon film for a gate electrode, and the second conductive film is a metal silicide for a gate electrode.

(Action)

By such a method, it is possible to prevent an increase in the dispersion of the polysilicon resistor due to the subsequent oxidation and deposition process, and thus to optimize the operating characteristics of the semiconductor device.

(Example)

Best Mode for Carrying Out the Invention Embodiments of the present invention will be described in detail below with reference to Figs.

2A through 2E sequentially illustrate a method of manufacturing a semiconductor device according to an embodiment of the present invention.

First, referring to FIG. 2A, a field oxide film 12 is formed on the semiconductor substrate 10 by defining an active region a and an inactive region b, and then including the field oxide film 12. On the semiconductor substrate 10, an oxide film 14 for a gate electrode, a polysilicon film 16 for a gate electrode, and a metal silicide film 18 are sequentially formed.

Next, in FIG. 2B, the gate silicon polysilicon layer 16 and the metal silicide layer 18 are etched to form a gate electrode polysilicon layer pattern 16a and a metal silicide layer pattern on the active region a. After the 18a is formed, the gate spacer oxide 20 is formed on the gate electrode oxide film 14 including the metal silicide film pattern 18a.

As shown in FIG. 2C, a resist polysilicon film 22 is formed on the gate spacer oxide film 20, and a photoresist pattern 24 is formed on the resist polysilicon film 22. To define the region where the polysilicon resistor is to be formed.

Next, referring to FIG. 2D, the photoresist pattern 24 is used as a mask so that the upper portion of the metal silicide layer pattern 18a and the surface of the field oxide layer 12 are exposed. ), The gate spacer oxide film 20 and the gate electrode oxide film 14 are sequentially etched.

Finally, when the photoresist pattern 24 is removed, as shown in FIG. 2E, the gate electrode layer is formed in the active region a, and the polysilicon resistor is simultaneously formed on the inactive region b.

According to the method of manufacturing a semiconductor device as described above, since the polysilicon resistor and the gate electrode layer are formed at the same time, the dispersion of the polysilicon resistor can be prevented from increasing, and therefore, the operating characteristics of the semiconductor device can be optimized.

Claims (3)

Forming an active region (a) and an inactive region (b) on the semiconductor substrate 10 to form the field oxide film 12; Sequentially forming a first insulating film (14), a first conductive film (16), and a second conductive film (18) on the semiconductor substrate (10) including the field oxide film (12); Etching the first and second conductive films (16, 18) to form first and second conductive film patterns (16a, 18a) for gate electrodes; Forming a second insulating film (20) on the semiconductor substrate (10) including the first and second conductive film patterns (16a, 18a) for the gate electrode; Forming a second conductive film (22) on the second insulating film (20); Forming a photoresist pattern (24) by defining a region in which the polysilicon resistor is to be formed on the second conductive film (22); The second conductive layer 22 and the second insulating layer 20 are exposed using the photoresist pattern 24 as a mask so that the upper portion of the second conductive layer pattern 18a and the surface of the field oxide layer 12 are exposed. And sequentially etching the first insulating film (14), wherein the polysilicon resistor is formed simultaneously with the spacer for the gate electrode. The method of claim 1, The first insulating film (12) is an oxide film for a gate electrode, and the second insulating film (20) is an oxide film for a gate spacer. The method of claim 1, The first conductive film (16) is a polysilicon film for a gate electrode, and the second conductive film (18) is a metal silicide for a gate electrode.