KR102760092B1 - P 편광 방사선을 갖는 헤드업 디스플레이(hud)을 위한 프로젝션 어셈블리 - Google Patents
P 편광 방사선을 갖는 헤드업 디스플레이(hud)을 위한 프로젝션 어셈블리 Download PDFInfo
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- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
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- B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
- B32B17/10009—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets
- B32B17/10036—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets comprising two outer glass sheets
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Abstract
- 열가소성 중간층(3)을 통해 서로 결합되는 외부 판유리(1) 및 내부 판유리(2)를 포함하며 HUD 영역(B)을 갖는 앞유리(10); 및
- HUD 영역(B)을 겨냥한 프로젝터(4)를 포함하며;
여기서
- 프로젝터(4)의 방사선은 주로 p-편광이며,
- 앞유리(10)에는 p-편광 방사선을 반사하기에 적합한 반사 코팅(20)이 제공되고; 및
여기서
- 반사 코팅(20)은 은을 기반으로 하는 정확히 하나의 전기 전도층(21)을 갖고,
- 굴절률이 1.9 이상인 하부 유전체층(22a) 또는 층 시퀀스(22a, 22b, 22c)가 전기 전도층(21) 아래에 배열되고,
- 굴절률이 1.9 이상인 상부 유전체층(23a) 또는 층 시퀀스(23a, 23b, 23c)가 전기 전도층(21) 위에 배열되고,
- 상부 유전체층(23a) 또는 층 시퀀스(23a, 23b, 23c)의 광학적 두께 대 하부 유전체층(22a) 또는 층 시퀀스(22a, 22b, 22c)의 광학적 두께의 비율은 적어도 1.7인 프로젝션 어셈블리.
Description
도 1은 일반적인 프로젝션 어셈블리의 복합 판유리의 평면도,
도 2는 일반적인 프로젝션 어셈블리의 단면도,
도 3은 본 발명에 따른 프로젝션 어셈블리의 복합 판유리 단면도,
도 4는 내부 판유리 상의 본 발명에 따른 반사 코팅의 실시예의 단면도,
도 5는 실시예 1 및 2 및 비교예 1에 따른 p-편광 방사선에 대한 복합 판유리의 반사 스펙트럼,
도 6은 실시예 3 및 비교예 2에 따른 p-편광 방사선에 대한 복합 판유리의 반사 스펙트럼, 및
도 7은 실시예 4 및 5 및 비교예 3 및 4에 따른 p-편광 방사선에 대한 복합 판유리의 반사 스펙트럼이다.
재료 | 참조부호 | 층 두께 | |||||
실시예 1 | 실시예 2 | 실시예 3 | 실시예 4 | 실시예 5 | |||
소다석회유리 | 1 | 2.1 mm | 2.1 mm | 2.1 mm | 2.1 mm | 2.1 mm | |
PVB | 3 | 0.76 mm | 0.76 mm | 0.76 mm | 0.76 mm | 0.76 mm | |
SiN | 20 | 23a | 70 nm | 70 nm | 60 nm | 60 nm | 60 nm |
SiZrN | 23c | - | - | - | 10 nm | 10 nm | |
ZnO | 23b | - | - | 10 nm | 10 nm | 10 nm | |
NiCr | 24 | 0.3 nm | 0.3 nm | 0.3 nm | 0.3 nm | 0.3 nm | |
Ag | 21 | 11 nm | 12 nm | 12 nm | 11 nm | 13 nm | |
ZnO | 22b | - | - | 10 nm | 10 nm | 10 nm | |
SiZrN | 22c | - | - | - | 10 nm | 10 nm | |
SiN | 22a | 30 nm | 35 nm | 25 nm | 20 nm | 20 nm | |
소다석회유리 | 2 | 2.1 mm | 2.1 mm | 2.1 mm | 2.1 mm | 2.1 mm |
재료 | 참조부호 | 층 두께 | ||||
비교예 1 | 비교예 2 | 비교예 3 | 비교예 4 | |||
소다석회유리 | 1 | 2.1 mm | 2.1 mm | 2.1 mm | 2.1 mm | |
PVB | 3 | 0.76 mm | 0.76 mm | 0.76 mm | 0.76 mm | |
SiN | 20 | 23a | 50 nm | 35 nm | 30 nm | 40 nm |
SiZrN | 23c | - | - | 10 nm | 10 nm | |
ZnO | 23b | - | 10 nm | 10 nm | 10 nm | |
NiCr | 24 | 0.3 nm | 0.3 nm | 0.3 nm | 0.3 nm | |
Ag | 21 | 12 nm | 13 nm | 13 nm | 13 nm | |
ZnO | 22b | - | 10 nm | 10 nm | 10 nm | |
SiZrN | 22c | - | - | 10 nm | 10 nm | |
SiN | 22a | 50 nm | 35 nm | 50 nm | 40 nm | |
소다석회유리 | 2 | 2.1 mm | 2.1 mm | 2.1 mm | 2.1 mm |
상부 유전체층 시퀀스의 광학적 두께 | 하부 유전체층 시퀀스의 광학적 두께 | 비율φ | |
실시예 1 | 140 | 60 | 2.33 |
실시예 2 | 140 | 70 | 2.00 |
실시예 3 | 140 | 70 | 2.00 |
실시예 4 | 162 | 82 | 1.98 |
실시예 5 | 162 | 82 | 1.98 |
비교예 1 | 100 | 100 | 1.00 |
비교예 2 | 90 | 90 | 1.00 |
비교예 3 | 102 | 142 | 0.72 |
비교예 4 | 122 | 122 | 1.00 |
실시예 1 | 실시예 2 | 실시예 3 | 실시예 4 | 실시예 5 | |
p 편광 방사선, 400nm- 680nm에 대한 평균반사율 | 17.6% | 19.9% | 20.2% | 16.6% | 22.3% |
최대 발생 반사율과 평균 간의 차이 | 1.8% | 1.7% | 2.0% | 1.1% | 1.6% |
최소 발생 반사율과 평균의 차이 | 1.1% | 0.7% | 1.5% | 0.9% | 1.3% |
표준편차, 400nm-680nm | 0.55% | 0.48% | 0.60% | 0.27% | 0.62% |
비교예 1 | 비교예2 | 비교예 3 | 비교예 4 | |
p-편광 방사선, 400nm-680nm에 대한 평균 반사율 | 17.6% | 19.8% | 23.1% | 22.0% |
최대 발생 반사율과 평균 간의 차이 | 4.2% | 3.6% | 5.1% | 5.8% |
최소 발생 반사율과 평균의 차이 | 1.4% | 1.6% | 2.2% | 2.3% |
표준편차, 400nm-680nm | 1.49% | 1.11% | 2.52% | 2.70% |
(1) 외부 판유리
(2) 내부 판유리
(3) 열가소성 중간층
(4) 프로젝터
(5) 관찰자 / 차량 운전자
(20) 반사 코팅
(21) 전기 전도층
(22a) 제1 하부 유전체층 / 반사방지층
(22b) 제2 하부 유전체층 / 매칭층
(22c) 제3 하부 유전체층 / 굴절율 증가층
(23a) 제1 상부 유전체층 / 반사방지층
(23b) 제2 상부 유전체층 / 매칭층
(23c) 제3 상부 유전체층 / 굴절율 증가층
(24) 금속 차단층
(O) 앞유리(10)의 상부 가장자리
(U) 앞유리(10)의 하부 가장자리
(B) 앞유리(10)의 HUD 영역
(E) 아이박스(eye box)
(I) 중간층(3)에서 멀어지는 방향을 향하는, 외부 판유리(1)의 외측 표면
(II) 중간층(3)을 향하는, 외부 판유리(1)의 내측 표면
(III) 중간층(3)을 향하는, 내부 판유리(2)의 외측 표면
(IV) 중간층(3)에서 멀어지는 방향을 향하는, 내부 판유리(2)의 내측 표면
Claims (15)
- 헤드업 디스플레이(HUD)용 프로젝션 어셈블리로서, 적어도
- 열가소성 중간층(3)을 통해 서로 결합되는 소다석회유리로 제조된 외부 판유리(1) 및 소다석회유리로 제조된 내부 판유리(2)를 포함하며 HUD 영역(B)을 갖는 앞유리(10); 및
- HUD 영역(B)을 겨냥하고 프로젝터(4)의 방사선이 앞유리(10)에 45°내지 70°의 입사각으로 부딪히는 프로젝터(4)를 포함하며;
여기서
- 프로젝터(4)의 방사선은 p-편광이며,
- 앞유리(10)에는 p-편광 방사선을 반사하기 위한 반사 코팅(20)이 제공되고; 및
여기서
- 반사 코팅(20)은 은을 기반으로 하는 정확히 하나의 전기 전도층(21)을 갖고,
- 굴절률이 1.9 이상인 하부 유전체층(22a) 또는 층 시퀀스(22a, 22b, 22c)가 전기 전도층(21) 아래에 배열되고,
- 굴절률이 1.9 이상인 상부 유전체층(23a) 또는 층 시퀀스(23a, 23b, 23c)가 전기 전도층(21) 위에 배열되고,
- 상부 유전체층(23a) 또는 층 시퀀스(23a, 23b, 23c)의 광학적 두께 대 하부 유전체층(22a) 또는 층 시퀀스(22a, 22b, 22c)의 광학적 두께의 비율은 적어도 1.7인 프로젝션 어셈블리.
- 제1항에 있어서, 상부 유전체층(23a) 또는 층 시퀀스(23a, 23b, 23c)의 광학적 두께 대 하부 유전체층(22a) 또는 층 시퀀스( 22a, 22b, 22c)의 광학적 두께의 비율는 1.8 이상인 프로젝션 어셈블리.
- 제1항 또는 제2항에 있어서, 상부 유전체층(23a) 또는 층 시퀀스(23a, 23b, 23c)의 광학적 두께는 100 nm 내지 200 nm인 프로젝션 어셈블리.
- 제1항 또는 제2항에 있어서, 하부 유전체층(22a) 또는 층 시퀀스(22a, 22b, 22c)의 광학적 두께는 50 nm 내지 100 nm인 프로젝션 어셈블리.
- 제1항 또는 제2항에 있어서, 반사 코팅(20)은 굴절률이 1.9 미만인 유전체층들을 포함하지 않는 프로젝션 어셈블리.
- 제1항 또는 제2항에 있어서,
- 실리콘 질화물을 기반으로 하고 적어도 1.9의 굴절률을 갖는 정확히 하나의 하부 유전체층(22a)이 전기 전도층(21) 아래에 배열되고 및/또는
- 실리콘 질화물을 기반으로 하고 적어도 1.9의 굴절률을 갖는 정확히 하나의 상부 유전체층(22a)이 전기 전도층(21) 위에 배열되는 프로젝션 어셈블리.
- 제1항 또는 제2항에 있어서,
- 실리콘 질화물을 기반으로 하는 제1 하부 유전체층(22a) 및 아연 산화물을 기반으로 하며 1.9 이상의 굴절률을 갖는 제2 하부 유전체층(22b)이 전기 전도층(21) 아래에 배열되고, 및/또는
- 실리콘 질화물을 기반으로 하는 제1 상부 유전층(23a) 및 아연 산화물을 기반으로 하며 1.9 이상의 굴절률을 갖는 제2 상부 유전체층(23b)이 전기 전도층(21) 위에 배열되는 프로젝션 어셈블리.
- 제1항 또는 제2항에 있어서,
- 실리콘 질화물을 기반으로 하는 제1 하부 유전체층(22a), 아연 산화물을 기반으로 하는 제2 하부 유전체층(22b), 및 혼합 실리콘-금속 질화물 또는 혼합 실리콘-지르코늄 질화물 또는 혼합 실리콘-하프늄 질화물을 기반으로 하며, 1.9 이상의 굴절률을 갖는 제3 하부 유전체층(22c)이 전기 전도층(21) 아래에 배열되고, 및/또는
- 실리콘 질화물을 기반으로 하는 제1 상부 유전체층(23a), 아연 산화물을 기반으로 하는 제2 상부 유전체층(23b) 및 혼합 실리콘-금속 질화물 또는 혼합 실리콘-지르코늄 질화물 또는 혼합 실리콘-하프늄 질화물을 기반으로 하며, 1.9 이상의 굴절률을 갖는 제3 상부 유전체층(23c)이 전기 전도층(21) 위에 배열되는 프로젝션 어셈블리.
- 제1항 또는 제2항에 있어서, 반사 코팅(20)은 전기 전도층(21) 위에 및/또는 아래에 배열되는 적어도 하나의 금속 차단층(24)을 포함하고 1 mm미만의 기하학적 두께를 갖는 프로젝션 어셈블리.
- 제1항 또는 제2항에 있어서, 외부 판유리(1)는 착색되거나 채색되고 80% 이상의 광 투과율을 갖는 프로젝션 어셈블리.
- 제1항 또는 제2항에 있어서, 프로젝터(4)의 방사선은 본질적으로 순수하게 p-편광되는 프로젝션 어셈블리.
- 제1항 또는 제2항에 있어서, 프로젝터(4)의 방사선은 60°내지 70°의 입사각으로 앞유리(10)에 충돌하는 프로젝션 어셈블리.
- 제1항 또는 제2항에 있어서, 전기 전도층(21)은 10 nm 내지 14 nm의 기하학적 두께를 갖는 프로젝션 어셈블리.
- 제1항 또는 제2항에 있어서, 앞유리(10)의 외부 표면들(I, IV)은 서로에 대해 실질적으로 평행하게 배열되는 프로젝션 어셈블리.
- 제1항 또는 제2항에 있어서, 반사 코팅(20)은 중간층(3)을 향하는 외부 판유리(1) 또는 내부 판유리(2)의 표면(II, III)에 또는 중간층(3) 내에 배열되는 프로젝션 어셈블리.
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- 2020-11-03 KR KR1020227016351A patent/KR102760092B1/ko active Active
- 2020-11-03 CN CN202080004693.5A patent/CN114829989B/zh active Active
- 2020-11-03 WO PCT/EP2020/080723 patent/WO2021104800A1/de unknown
- 2020-11-03 US US17/763,565 patent/US12174374B2/en active Active
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CN114829989B (zh) | 2024-10-29 |
KR20220085794A (ko) | 2022-06-22 |
US20220342217A1 (en) | 2022-10-27 |
US12174374B2 (en) | 2024-12-24 |
CN114829989A (zh) | 2022-07-29 |
EP4066025A1 (de) | 2022-10-05 |
WO2021104800A1 (de) | 2021-06-03 |
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