KR102734029B1 - Cut working method of workpice and cut working apparatus of workpiece - Google Patents

Abstract

[Task] To provide a method for cutting a workpiece, which enables cutting with little deterioration in the warp value using an X-θ type wire saw device, even when the cutting direction of the workpiece is set in the direction in which the warp value significantly deteriorates (θ direction).
[Solution] A method for cutting and processing a workpiece, comprising: a plurality of wire guides arranged at a predetermined interval so that their rotational axes are parallel to each other, each having a groove formed at a predetermined pitch on its outer surface; and a plurality of workpieces for cutting, each of which forms a wire row by a wire wound in a spiral shape at a predetermined pitch in the grooves of the wire guides; n (n ≥ 2) ingots are installed in parallel; the wire guides are rotated so that the wires are driven in the axial direction; the plurality of workpieces are simultaneously pressed against the wire row, thereby cutting and processing the plurality of workpieces into wafers at a plurality of locations; wherein the workpiece is a single crystal ingot whose central axis direction is in the <111> direction or the <100>direction; and at least one of the plurality of workpieces is a single crystal ingot whose central axis direction is in the <111> direction, and when cutting a single crystal ingot whose central axis direction is in the <111> direction with a wire, the cutting direction from the <110> direction is A cutting processing method for performing cutting by setting the cutting direction of each ingot such that when the misalignment angle is θ(°) (wherein the misalignment angles θ from the (1-10) direction, the (-101) direction, and the (01-1) direction have counterclockwise rotation in both directions, and the misalignment angles θ from the (0-11) direction, the (-110) direction, and the (10-1) direction have clockwise rotation in both directions, -30°≤θ≤+30°. Furthermore, θ of a single crystal ingot whose central axis direction is in the <100> direction is 0° regardless of the cutting direction.), the sum of the respective θs (θ ₁ +θ ₂ +···+θ _n ) of the plurality of workpieces becomes -30°≤θ ₁ +θ ₂ +···+θ _n ≤30°.

Description

{CUT WORKING METHOD OF WORKPICE AND CUT WORKING APPARATUS OF WORKPIECE}

The present invention relates to a method for cutting a workpiece and a device for cutting a workpiece.

Recently, there has been a demand for wafers to become larger (larger diameter), and along with this larger size, wire saws are being used exclusively for cutting ingots (for example, Patent Document 1). A wire saw is a cutting device that cuts a plurality of wafers simultaneously by running a wire (high-strength steel wire) at high speed, pouring slurry on it, and cutting a workpiece (for example, an ingot of a brittle material such as silicon, glass, or ceramics; hereinafter also referred to simply as an ingot).

In cutting by a wire saw, first, the work to be cut is held by a work holder having a work plate that holds the work by interposing a plate therebetween, and a holder body that supports the work plate. Next, the work holder holding the work is mounted on a wire saw, and the work (W) is aligned with a wire row formed by winding a wire that reciprocates in the axial direction around a plurality of grooved rollers, thereby cutting the work (W) into a wafer shape. The wire saw cuts the work in the direction perpendicular to the work holder. In addition, each wire forming the wire row is approximately orthogonal to the work holder.

When cutting a wafer from a cylindrical ingot (hereinafter referred to as a "work") having the same crystal orientation as a semiconductor silicon single crystal, cutting is performed using the crystal plane of the work as a reference. In general, there is a misalignment between the central axis of the cylindrical work (the axis in the shape of the work) and the crystal axis orientation (crystal plane normal), and it is necessary to cut by correcting the misalignment (Patent Documents 1, 2).

The following methods are known for correcting the crystal axis orientation.

(1) When attaching a workpiece to a jig set on a wire saw by interposing a plate, the workpiece is rotated to adjust the orientation in the Y-axis direction, and the X-axis direction is adjusted by the attachment angle relative to the workholder (referred to as the “X-θ method”).

(2) A method of setting a work holder with a work attached to a wire saw and then adjusting the orientation inside the wire saw (called the “online setup X-Y tilt method”).

(3) When attaching a workpiece to a jig set on a wire saw by interposing a plate, a method of adjusting the inclination in the Y-axis direction by using a special jig and adjusting the orientation in the X-axis direction by the attachment angle with respect to the work holder (referred to as “offline setup X-Y tilt method”).

In addition, when slicing a workpiece having an axial orientation other than <100>, for example, an axial orientation of <111>, it is known that the damage difference between the front and back surfaces of the cut wafer (depending on the difference in processing resistance) changes and the slice quality (mainly the warp value) fluctuates greatly depending on the cutting direction (the cutting direction of the wire) when slicing the workpiece (see Patent Document 3).

Meanwhile, Fig. 4 shows the definition of Warp. Warp is a shape parameter regarding the deviation from the centerline plane of the wafer, and is the maximum distance within the plane between the virtual center plane of the wafer that is not fixed by suction and the reference plane. Bow in the drawing is an evaluation similar to Warp, but is a shape parameter of the distance between the center of the wafer and the reference plane. Meanwhile, the measurement method is stipulated by JEIDA-43-1999 and ASTM F1530-94.

Japanese Patent Publication No. H11-48238 Japanese Patent Publication No. 2017-24145 Japanese Patent Publication No. 2014-195025

Accordingly, when adjusting the crystal orientation of the work in the Y-axis direction by rotating the work as in the (1)X-θ method described above, if the direction in which the slice quality deteriorates significantly is the cutting direction, cutting is performed by changing the orientation target. For example, conventionally, cutting was performed after deviating from the allowable range of the specifications.

However, in cases where the azimuth standard is strict, since adjustment to change the target of this azimuth is not possible, a good product cannot be cut with a normal wire saw, and so cutting is performed using a device that allows adjustment by the X-Y tilt method ((2) and (3) described above) or a special jig that allows adjustment by the X-Y tilt method.

However, wire saws corresponding to the X-Y tilt method described in Patent Document 2 are generally expensive, and there is a problem that the productivity of the device is low because orientation alignment must be performed through an online setup. In addition, in the adjustment by the X-Y tilt method described in Patent Document 2, in the case of specifications that tilt greatly in the Y direction, there is also a problem that the difference in the amount of cutting becomes large depending on the position of the workpiece, and a stable warp value cannot be obtained.

The present invention has been made to solve the above problem, and the purpose of the present invention is to provide a method for cutting and processing a workpiece, and a cutting and processing device for cutting a workpiece, which enable cutting with less deterioration of the warp value in an X-θ type wire saw device without using a dedicated cutting device or a dedicated special jig corresponding to an X-Y tilt method which leads to high costs, even when the direction in which the warp value is greatly deteriorated is the cutting direction of the workpiece.

The present invention has been made to achieve the above object, and comprises a plurality of wire guides arranged at a predetermined interval so that their rotational axes are parallel to each other, and grooves formed at a predetermined pitch on their outer surfaces, and a plurality of workpieces for cutting, which form a wire row by a wire wound in a spiral shape at a predetermined pitch in the grooves of the wire guides, wherein n (n ≥ 2) ingots are installed in parallel, and the wire guides are rotated to cause the wires to run in the axial direction, while the plurality of workpieces are simultaneously pressed against the wire row, thereby cutting the plurality of workpieces into wafer shapes at a plurality of locations, wherein the workpieces are single crystal ingots whose central axis direction is in the <111> direction or the <100> direction, and at least one of the plurality of workpieces is a single crystal ingot whose central axis direction is in the <111> direction, and when cutting a single crystal ingot whose central axis direction is in the <111> direction with a wire, When the misalignment angle from the <110> direction is θ(°) (wherein, the misalignment angles θ from the (1-10) direction, the (-101) direction, and the (01-1) direction have counterclockwise rotation in both directions, and the misalignment angles θ from the (0-11) direction, the (-110) direction, and the (10-1) direction have clockwise rotation in both directions, and are -30°≤θ≤+30°. In addition, the θ of a single crystal ingot whose central axis direction is in the <100> direction is 0° regardless of the cutting direction.), the total sum of θ of each of the plurality of works (θ ₁ +θ ₂ +···+θ _n ) is,

-30°≤θ ₁ +θ ₂ +···+θ _n ≤30°

A cutting processing method is provided for performing cutting by setting the cutting direction of each ingot so as to enable cutting.

According to this cutting processing method, productivity can be improved and deterioration of the warp value can be suppressed with an X-θ type wire saw device without using a dedicated cutting device or a dedicated special jig corresponding to the X-Y tilt method, which leads to high costs.

At this time, a cutting processing method can be used to perform cutting by setting the cutting direction of each ingot so that not all of θ of each of the plurality of works becomes positive or negative.

Accordingly, the deterioration of the Warp value can be suppressed more effectively.

At this time, the sum of the above θ is

-5°≤θ ₁ +θ ₂ +···+θ _n ≤5°

More preferably, θ ₁ +θ ₂ +···+θ _n = 0°

It can be done by a cutting processing method that sets it to be cut.

Accordingly, the deterioration of the Warp value can be suppressed more effectively.

At this time, a cutting processing method can be performed in which the plurality of works are a first ingot and a second ingot, and a single crystal ingot having a central axis direction in the <111> direction is used as the first ingot, and when cutting the first ingot into a wire, a misalignment angle θ ₁ of the cutting direction from the <110> direction is set to a range of 0°≤θ ₁ ≤30°, and when cutting the second ingot into a wire, a single crystal ingot having a central axis direction in the <111> direction is used, and a misalignment angle θ ₂ of the cutting direction from the <110> direction is set to -30°≤θ ₂ ≤0°.

Accordingly, the deterioration of the Warp value can be suppressed more reliably.

At this time, the plurality of works are made into a first ingot and a second ingot, and a single crystal ingot having a central axis direction in the <111> direction is used as the first ingot, and when cutting the first ingot into a wire, the angle of deviation θ ₁ of the cutting direction from the <110> direction is set to -30°≤θ ₁ ≤30°, and the cutting is performed using an ingot having a central axis direction in the <100> direction as the second ingot.

Accordingly, the deterioration of the Warp value can be suppressed more reliably.

At this time, in the first ingot or the second ingot, a cutting processing method can be used in which the length and diameter of the second ingot are greater than or equal to the length and diameter of the first ingot.

Accordingly, the deterioration of the Warp value can be more reliably suppressed while further improving productivity.

In addition, the present invention is a cutting processing device comprising a plurality of wire guides arranged at a predetermined interval so that their rotational axes are parallel to each other and each having a groove formed at a predetermined pitch on an outer surface, a wire row formed by a wire wound spirally at a predetermined pitch in the grooves of the wire guides, n work holding sections each holding n (n ≥ 2) ingots used as a plurality of workpieces to be cut, and a control section, wherein the control section controls the plurality of workpieces to be cut into wafers at a plurality of locations simultaneously while causing the wires to travel in the axial direction by rotating the wire guides, wherein the control section selects the workpiece from a single crystal ingot whose central axis direction is in the <111> direction or the <100> direction,

When at least one of the above plurality of works is a single crystal ingot whose central axis direction is in the <111> direction, and the angle of deviation of the cutting direction from the <110> direction when cutting the single crystal ingot whose central axis direction is in the <111> direction with a wire is θ(°) (provided that the angles of deviation θ from the (1-10) direction, the (-101) direction, and the (01-1) direction have the counterclockwise rotation in both directions, and the angles of deviation θ from the (0-11) direction, the (-110) direction, and the (10-1) direction have the clockwise rotation in both directions, and are -30°≤θ≤+30°. In addition, θ of the single crystal ingot whose central axis direction is in the <100> direction is 0° regardless of the cutting direction), the total sum of θ of each of the above plurality of works (θ ₁ +θ ₂ +···+θ _n) )this,

-30°≤θ ₁ +θ ₂ +···+θ _n ≤30°

A cutting processing device for a workpiece is provided, which controls cutting by setting the cutting direction of each ingot so as to perform cutting.

According to the cutting processing device of this work, it is possible to suppress the deterioration of the warp value while maintaining productivity with the X-θ type wire saw device leading to low cost.

At this time, the control unit can provide a cutting processing device for the workpiece that controls cutting by setting the cutting direction of each ingot so that all of θ of each of the plurality of works does not become positive or negative.

Accordingly, it is possible to more effectively suppress the deterioration of the Warp value.

At this time, the control unit determines that the sum of θ is

-5°≤θ ₁ +θ ₂ +···+θ _n ≤5°

More preferably,

θ ₁ +θ ₂ +···+θ _n = 0°

It can be made into a cutting processing device of a workpiece that performs control to perform cutting by setting it to be so.

Accordingly, it is possible to more effectively suppress the deterioration of the Warp value.

At this time, the cutting processing device cuts the first ingot and the second ingot as the plurality of workpieces, and the control unit controls the cutting so that the cutting direction when cutting the first ingot into a wire, using a single crystal ingot whose central axis direction is in the <111> direction as the first ingot, is set such that the deviation angle θ ₁ from the <110> direction is in the range of 0°≤θ ₁ ≤30°, and the cutting direction when cutting the second ingot into a wire, using a single crystal ingot whose central axis direction is in the <111> direction as the second ingot, is set such that the deviation angle θ ₂ from the <110> direction is -30°≤θ ₂ ≤0°.

Accordingly, it is possible to suppress the deterioration of the Warp value more reliably.

At this time, the cutting processing device cuts the first ingot and the second ingot as the plurality of workpieces, and the control unit sets the cutting direction when cutting the first ingot into a wire using a single crystal having a central axis direction in the <111> direction as the first ingot so that the angle of deviation θ ₁ from the <110> direction is -30°≤θ ₁ ≤30°, and controls the cutting using an ingot having a central axis direction in the <100> direction as the second ingot.

Accordingly, it is possible to suppress the deterioration of the Warp value more reliably.

As described above, according to the cutting processing method for a workpiece of the present invention, in cutting a single crystal ingot having a <111> direction, it is possible to suppress the deterioration of the warp value without performing cumbersome work, at low cost, and while improving productivity. Furthermore, according to the cutting processing device for a workpiece of the present invention, in cutting a single crystal ingot having a <111> direction, it is possible to suppress the deterioration of the warp value without performing cumbersome work, at low cost, and while improving productivity.

Figure 1 shows a schematic diagram of a cutting device for a workpiece according to the present invention.
Figure 2 is an explanatory diagram of warp value deterioration suppression.
Figure 3 shows the relationship between the misalignment angle θ from the <110> direction of the cutting direction and the warp value of the wafers obtained in Reference Example 1, Examples 1-3 and 6, and Comparative Example 1-3.
Figure 4 shows the definition of Warp.
Figure 5 shows a conceptual diagram of a cross-section perpendicular to the axial direction of a work (single crystal ingot) having an axial orientation of <111>.
Figure 6 shows the definition of the cutting direction θ of a work (single crystal ingot) having an axial orientation <111>.
Figure 7 shows the dependence of the warp value of the wafer after cutting on the cutting direction.
Figure 8 shows the cutting time dependence of the warp value (relative value) when cutting one workpiece having an axial orientation <111> with a misalignment angle of 30° from the cutting direction <110>.

Hereinafter, the present invention will be described in detail, but the present invention is not limited thereto.

As described above, even when the direction in which the warp value is greatly deteriorated is the cutting direction, a method for cutting a workpiece and a cutting device for cutting a workpiece that can realize cutting with little deterioration in the warp value by using an X-θ type wire saw device without using a dedicated cutting device or a dedicated special jig corresponding to the X-Y tilt method have been demanded.

The present inventors have made repeated careful studies on the above-mentioned problem, and as a result, the present invention relates to a method for cutting and processing a workpiece, comprising: a plurality of wire guides arranged at a predetermined interval so that their rotational axes are parallel to each other, each having a groove formed at a predetermined pitch on its outer surface; and a plurality of workpieces for cutting, wherein n (n ≥ 2) ingots are installed in parallel, the wire guides are rotated to cause the wires to run in the axial direction, and the plurality of workpieces are simultaneously pressed against the wire rows, thereby cutting and processing the plurality of workpieces into wafer shapes at a plurality of locations, wherein the workpiece is a single crystal ingot whose central axis direction is in the <111> direction or the <100> direction, and at least one of the plurality of workpieces is a single crystal ingot whose central axis direction is in the <111> direction, and when cutting a single crystal ingot whose central axis direction is in the <111> direction with a wire, When the misalignment angle from the <110> direction is θ(°) (wherein, the misalignment angles θ from the (1-10) direction, the (-101) direction, and the (01-1) direction have the counterclockwise direction as both directions, and the misalignment angles θ from the (0-11) direction, the (-110) direction, and the (10-1) direction have the clockwise direction as both directions, and -30°≤θ≤+30°. In addition, θ of a single crystal ingot whose central axis direction is the <100> direction is 0° regardless of the cutting direction.),

The sum of each θ of the above plurality of works (θ ₁ +θ ₂ +···+θ _n ),

-30°≤θ ₁ +θ ₂ +···+θ _n ≤30°

The present invention has been completed by discovering a method of cutting by setting the cutting direction of each ingot so as to perform cutting, and by using an X-θ type wire saw device without using a dedicated cutting device or a dedicated special jig corresponding to the X-Y tilt method, thereby improving productivity and suppressing deterioration of the warp value.

In addition, a cutting processing device is provided, which comprises a plurality of wire guides arranged at a predetermined interval so that their rotation axes are parallel to each other and each having a groove formed at a predetermined pitch on an outer surface, a wire row formed by wires spirally wound at a predetermined pitch in the grooves of the wire guides, n work holding sections each holding n (n ≥ 2) ingots used as a plurality of workpieces to be cut, and a control section, wherein the control section controls the plurality of workpieces to be simultaneously cut into wafers at a plurality of locations while simultaneously running the wires in the axial direction by rotating the wire guides, wherein the control section selects the workpiece from a single crystal ingot whose central axis direction is in the <111> direction or the <100> direction, and at least one of the plurality of workpieces is a single crystal ingot whose central axis direction is in the <111> direction, and cuts the single crystal ingot whose central axis direction is in the <111> direction with a wire. When the angle of deviation from the <110> direction of the cutting direction is θ(°) (wherein, the angles of deviation θ from the (1-10) direction, the (-101) direction, and the (01-1) direction have the counterclockwise rotation in both directions, and the angles of deviation θ from the (0-11) direction, the (-110) direction, and the (10-1) direction have the clockwise rotation in both directions, and are -30°≤θ≤+30°. In addition, the θ of a single crystal ingot whose central axis direction is in the <100> direction is 0° regardless of the cutting direction.), the total sum of θ of each of the plurality of works (θ ₁ +θ ₂ +···+θ _n ) is,

-30°≤θ ₁ +θ ₂ +···+θ _n ≤30°

The present invention has been completed by discovering that it is possible to improve productivity and suppress deterioration of warp value by using a cutting processing device of a workpiece that controls cutting by setting the cutting direction of each ingot so as to perform cutting, without using a dedicated cutting device corresponding to the X-Y tilt method or a dedicated special jig, with an X-θ type wire saw device.

Meanwhile, the present invention improves productivity while suppressing deterioration of warp value by using a wire saw device of the X-θ method leading to low cost, without using a dedicated cutting device or a dedicated special jig corresponding to the X-Y tilt method leading to high cost as described above. It goes without saying that the device used for cutting is not limited to the X-θ method, and can also be implemented with the X-Y tilt method.

Below, the explanation is given with reference to the drawings.

As described above, when slicing a workpiece having an axial orientation of <111>, it was known that the damage difference between the front and back surfaces of the cut wafer (depending on the difference in processing resistance) changed and the slice quality (mainly the Warp value) greatly fluctuated depending on the cutting direction (the cutting direction of the wire) when slicing the workpiece. Meanwhile, the following explanation exemplifies the use of a silicon single crystal as the workpiece, but the workpiece having an axial orientation of <111> is not limited to a silicon single crystal.

Fig. 5 shows a conceptual diagram of a cross-section perpendicular to the axial direction of a silicon single crystal having an axial orientation of <111>. For example, when the cutting direction by a wire saw is in the direction indicated by the solid arrow in Fig. 5, the damage difference between the front and back surfaces of the wafer becomes small, and the influence on the Warp value is small. However, when the cutting direction becomes the direction indicated by the dashed arrow in Fig. 5, the damage difference between the front and back surfaces of the wafer becomes large, and the Warp value deteriorates significantly.

Meanwhile, the solid arrow direction in Fig. 5 is the <110> direction in crystallography, and when referred to as “<110> direction” in this specification, it includes a crystallographically equivalent direction as indicated by the solid arrow in Fig. 5.

Here, the definition of the cutting direction of a single crystal ingot having the central axis directions of the <111> direction and the <100> direction will be described with reference to Fig. 6. In this specification, the “deviation angle θ(°) from the <110> direction” means the deviation angle from the <110> direction. At this time, with respect to the sign (+ direction, - direction) indicating the direction of the deviation angle, the deviation angle θ from the (1-10) direction, the (-101) direction, and the (01-1) direction has the counterclockwise rotation direction as both directions, and the deviation angle θ from the (0-11) direction, the (-110) direction, and the (10-1) direction has the clockwise rotation direction as both directions. In addition, -30°≤θ≤30°.

For example, if arrow A shown in Fig. 6 is the cutting direction, the misalignment angle from the (1-10) direction is 15° in the negative (minus) direction from the (1-10) direction since the counterclockwise direction is the positive direction, and the misalignment angle from the <110> direction is referred to as "-15°". In addition, if arrow B shown in Fig. 6 is the cutting direction, it is 20° in the positive (plus) direction from the (1-10) direction, and the misalignment angle from the <110> direction is referred to as "+20°". If arrow C shown in Fig. 6 is the cutting direction, the misalignment angle from the (0-11) direction is 15° in the positive (plus) direction from the (0-11) direction since the clockwise direction is the positive direction, and the misalignment angle from the <110> direction is referred to as "+15°". On the other hand, the misalignment angle θ is -30°≤θ≤+30° from the symmetry of the crystal orientation. Furthermore, in Fig. 6, the (1-10) direction, the (-101) direction, and the (01-1) direction are directions in which the processing resistance characteristics of the cutting direction are the same from the symmetry of the crystal. The signs of the misalignment angles θ based on these directions are the same. On the other hand, the processing resistance characteristics of the cutting direction in the (0-11) direction, the (-110) direction, and the (10-1) direction are different (opposite) from those in the (1-10) direction. Therefore, the signs of the misalignment angles θ from the (0-11) direction, the (-110) direction, and the (10-1) direction and the misalignment angles θ from the (1-10) direction, the (-101) direction, and the (01-1) direction are opposite. Meanwhile, the processing resistance characteristics in the cutting direction will be described in detail later.

For example, the (1-21) direction shown in Fig. 5, when considering both the positive and negative directions of θ as the same reference (same rotation direction, same sign), creates the viewpoint that it is +30° from the (1-10) direction and -30° from the (0-11) direction. However, since the (1-10) direction and the (0-11) direction have different (opposite) processing resistance characteristics in the cutting direction, based on the definition of the present invention, the (1-21) direction is expressed as a misalignment angle θ from the (1-10) direction as +30°, and the misalignment angle θ from the (0-11) direction is expressed as +30°.

In addition, for a single crystal ingot whose central axis direction is in the <100> direction, since there is no damage difference (due to processing resistance difference) between the front and back surfaces of the wafer depending on the cutting direction as will be explained later, θ=0° is set regardless of the cutting direction. In other words, for a single crystal ingot whose central axis direction is in the <100> direction, θ=0° is defined regardless of the cutting direction at any angle.

Here, Fig. 7 shows the cutting direction dependence of the Warp value of the wafer after cutting when slicing a silicon single crystal having an axial orientation of <111>, which the inventors investigated. The horizontal axis shows the misalignment angle θ [°] from the <110> direction of the cutting direction, and the vertical axis shows the Warp value (relative value). As shown in Fig. 7, when the cutting direction is 0°, the Warp value is the best, and as the misalignment angle increases, the Warp value also worsens (increases).

The present inventors further investigated the difference in Warp value according to cutting time (i.e., cutting speed). Fig. 8 is a diagram showing the relationship between the cutting time and the Warp value (relative value) when the misalignment angle θ from the <110> direction of the cutting direction is θ = +30° for a silicon single crystal having an axial orientation <111>. As shown in Fig. 8, even when the cutting direction is misaligned in the direction of +30° from the <110> direction, the deterioration of the Warp value can be suppressed by lengthening the cutting time (lowering the cutting speed), but the decrease in productivity is significant.

The inventors of the present invention have, as a result of their investigation, found that even when the cutting direction of the workpiece is in a direction in which the warp value greatly deteriorates (the θ direction), by cutting a plurality of workpieces simultaneously and employing a specific combination of these cutting directions or crystal axis orientations, it is possible to prevent the deterioration of the warp value using a simple device, and furthermore, to significantly improve productivity.

First, a wire saw, which is a cutting processing device for a workpiece according to the present invention, will be described with reference to Fig. 1. Fig. 1 shows an example of a wire saw, a cutting processing device for a workpiece according to the present invention. The upper drawing of Fig. 1 is a drawing as seen from the front, and the lower drawing is a drawing as seen from above. A wire saw (100) is provided with a plurality of cylindrical wire guides (1, 1') arranged at a predetermined interval so that their rotation axes are parallel to each other and each having a groove formed at a predetermined pitch on the outer surface, a wire row (3) formed by a wire (2) spirally wound at a predetermined pitch in the grooves of the wire guides, and a work holding section (5, 5') capable of holding each of a plurality of workpieces (ingots) (4, 4') to be cut, the number of which corresponds to the number of workpieces. When driving (cutting processing of workpieces), the wire guide (1, 1') is rotated to drive the wire (2) in the axial direction, and a plurality of workpieces (4, 4') are brought into contact with the wire row (3) so that the plurality of workpieces (4, 4') are cut into wafer shapes at multiple locations simultaneously, and the operation is controlled by the control unit (6) (omitted in the lower part of Fig. 1).

The wire saw (100), which is a workpiece cutting processing device according to the present invention, has a number of workpiece holding parts (5, 5') such as clamp parts corresponding to the number of workpieces to be cut, for example, two or more, and has a structure capable of cutting a plurality of workpieces (ingots) (4, 4') in parallel and side by side at the same time. As described later, the control part (6) sets the cutting direction of a plurality of workpieces and controls the cutting processing device so as to perform cutting processing. Meanwhile, as the workpiece cutting device, either a glass-grinding type or a fixed-grinding type device can be applied.

Next, a method for cutting and processing a workpiece according to the present invention is described. A plurality of workpieces (ingots) (4, 4') are cut in parallel and simultaneously, and at least one of the plurality of workpieces is a single crystal ingot whose central axis direction is in the <111> direction.

When a workpiece to be processed is received, the crystal characteristics of the workpiece are measured, and data such as the crystal axis orientation are obtained. After that, characteristic values such as the crystal orientation (direction) of the workpiece outer periphery, and orientation correction values, etc. are calculated. This orientation correction value is a correction value for tilting during cutting due to the difference between the orientation of the workpiece and the specifications of the workpiece (orientation of the surface of the wafer to be obtained by cutting). Next, based on the obtained characteristic values, a combination of workpieces to be subjected to cutting processing is selected, and the cutting direction is set (described later).

Finally, adjustment is made using the set cutting direction or the calculated above correction value, the work is held by adhering it to the work holder of the work holding unit, and attached to the wire saw. The same procedure is performed for multiple work pieces. Then, multiple work pieces are cut at the same time.

Next, the setting of the cutting direction of the workpiece to be cut will be described. For a plurality of workpieces to be cut simultaneously, the cutting direction of each workpiece is set so that the sum of the deviation angles θ _n (°) of the cutting direction of each workpiece from the <110> direction is -30° or more and 30° or less (-30°≤θ ₁ +θ ₂ +···+θ _n ≤30°). If the sum of the deviation angles θ (°) from the <110> direction is less than -30° but greater than +30°, the deterioration of the warp value cannot be suppressed. The sum of θ _n (°) is more preferably -5°≤θ ₁ +θ ₂ +···+θ _n ≤5°, and it is even more preferably θ ₁ +θ ₂ +···+θ _n = 0°.

By setting the cutting direction within this range, even when the cutting direction of the workpiece cannot be other than the direction in which the warp value deteriorates significantly (θ direction), cutting processing with less deterioration of the warp value becomes feasible. As a result, cutting with less deterioration of the warp value becomes feasible with an X-θ type wire saw device without using a dedicated cutting device or a dedicated special jig corresponding to an expensive X-Y tilt method.

By setting as described above, even in cases where the direction in which the Warp value significantly worsens (the θ direction) cannot be helped but be the cutting direction of the workpiece, the reason why the deterioration of the Warp value can be suppressed is thought to be as follows. In the case of cutting only one workpiece, as described above, depending on the cutting direction (the cutting direction of the wire) when slicing the workpiece, the damage difference (according to the difference in processing resistance) of the front and back of the cut wafer changes, and the slice quality (mainly the Warp value) fluctuates greatly. On the other hand, in the case of cutting a plurality of workpieces simultaneously as in the present invention, it is thought that the workpiece in the cutting direction in which the Warp value is less likely to worsen functions like a guide station of the wire, thereby suppressing the damage difference (according to the difference in processing resistance) of the front and back of the wafer being cut.

In particular, the effect is further enhanced by performing cutting while setting the cutting direction of each ingot so that the misalignment angle θ(°) from the <110> direction of the cutting direction does not become positive or negative for all of the plurality of works. In other words, the effect is further enhanced by performing cutting while setting the cutting direction so that the sign of the misalignment angle θ _n (°) from the <110> direction of the cutting direction is mixed with positive and negative.

This is explained using Fig. 2. Fig. 2 is a drawing showing the difference in the case where the misalignment angle θ from the (1-10) direction of the cutting direction of the workpiece (single crystal ingot) whose central axis direction is in the <111> direction is +30° and -30° when cutting. As shown in the "Case of Individual Cutting" at the top of Fig. 2, for example, in the case of a workpiece with θ = -30°, when cutting alone (only one), depending on the difference in cutting resistance (processing resistance), the wire tends to misalign to the left in the cutting direction, the misalignment becomes maximum at the center of the workpiece, and there is a tendency to return so that it misaligns again in the direction where the processing resistance is weak (right). As a result, the wafer obtained by cutting has a warped shape (i.e., a large Warp value) as shown in the drawing. On the other hand, in the case of the workpiece of θ = +30°, since it has the processing resistance characteristic of the cutting direction symmetrical to that of the workpiece of θ = -30°, the shape of the wafer obtained by cutting is also symmetrical (the warpage direction is opposite) to that of the case of θ = -30°. In this way, it is thought that the Warp value is worsened by the influence of the strength of the processing resistance of the crystal plane. On the other hand, considering the symmetry of the crystal, when the (1-10) direction, the (-101) direction, and the (01-1) direction are used as the standards for the misalignment angle, and when the (0-11) direction, the (-110) direction, and the (10-1) direction are used as the standards for the misalignment angle, the relationship between the misalignment direction of the cutting direction and the direction of warpage becomes symmetrical (opposite). For example, when cutting from a direction that is 15° counterclockwise from the (1-10) direction and when cutting from a direction that is 15° counterclockwise from the (0-11) direction, the degree of warping is approximately the same, but the direction of warping is opposite.

Meanwhile, when two workpieces are installed in parallel and cut simultaneously with the cutting direction of the workpieces misaligned at angles θ of +30° and -30° from the (1-10) direction, as shown in the "parallel cutting case" of Fig. 2, the directions of the processing resistance of each workpiece act to cancel each other out, and as a result, it is thought that the deterioration of the shape of the wafer obtained by cutting, that is, the deterioration of the warp, is suppressed.

From this point of view, when single crystal ingots having a central axis direction of the <111> direction are used as the first ingot and the second ingot, the first ingot is cut such that the angle of deviation θ ₁ of the cutting direction from the <110> direction when cut with a wire is set to be in the range of 0°≤θ ₁ ≤30°, and the second ingot is cut such that the angle of deviation θ ₂ of the cutting direction from the <110> direction when cut with a wire is set to be -30°≤θ ₂ ≤0°, the effect of offsetting the processing resistance is effectively exerted, and a wafer having a better warp value can be obtained.

As a result of repeated examination by the inventor, it was found that the deterioration of the Warp value can be suppressed even in combinations other than combinations of workpieces with different signs (positive and negative) by setting the angle of deviation θ from the <110> direction of the cutting direction of the workpiece. In this case, it was made clear through the inventor's experiments that not only is the Warp value averaged, but it is more strongly influenced by the workpiece on the side where the Warp value does not deteriorate (decreases).

Meanwhile, in the combination of cutting directions described above, it is preferable that the crystal direction that serves as the reference for the misalignment angle θ of the cutting direction for a plurality of ingots be the same crystal direction, but it goes without saying that it is also possible to adopt cutting directions in which the reference crystal directions are different directions. For example, the cutting direction of the first ingot may be the misalignment angle θ ₁ from the (1-10) direction in Fig. 6, _and the cutting direction of the second ingot may likewise be the misalignment angle θ ₂ from the (1-10) direction, or it is also possible to set the cutting direction of the second ingot to the misalignment angle θ ₂ from the (-101) direction or the misalignment angle θ ₂ from the (0-11) direction.

As described above, even if the combination is other than a combination of workpieces having different signs (positive and negative) as the misalignment angle θ from the <110> direction of the cutting direction of the workpiece, the deterioration of the Warp value can be suppressed. For example, even if one side of a single crystal ingot whose central axis direction is in the <111> direction has a misalignment angle θ from the <110> direction of the cutting direction of θ=0°, a wafer having a good Warp value can be obtained. As shown in Fig. 7, when the misalignment angle θ from the <110> direction of the cutting direction is θ=0°, the deterioration of the Warp value does not occur. When such a workpiece is employed as one of the workpieces for simultaneous cutting processing, the effect of suppressing the deterioration of Warp is further enhanced.

Another example of a combination of works is described. As a first ingot, a single crystal ingot whose central axis direction is in the <111> direction is used, and the angle of deviation θ ₁ of the cutting direction from the <110> direction is set to -30°≤θ ₁ ≤30°. In addition, by performing cutting using, as a second ingot, a single crystal ingot whose central axis direction is in the <100> direction (in this case, θ ₂ = 0° from the definition), a wafer having a good warp value can be obtained. A single crystal ingot whose central axis direction is in the <100> direction does not experience a deterioration in warp value even when cutting is performed alone. In this case, the effect of suppressing the deterioration of warp is enhanced as when the second ingot described above is used, the single crystal ingot having the central axis direction in the <111> direction, and the cutting direction is set to the misalignment angle θ from the <110> direction as θ=0°.

When a cutting direction or ingot whose warp value does not deteriorate even when cut alone is adopted, such as when a single crystal ingot whose central axis direction is in the <111> direction is used as the second ingot and the angle of deviation θ ₂ from the <110> direction is set to θ ₂ = 0°, or when a single crystal ingot whose central axis direction is in the <100> direction (θ ₂ = 0° from the definition) is used, it is preferable that the length and diameter of the second ingot be equal to or larger than the length and diameter of the other ingot. When a plurality of workpieces having different shapes, such as lengths and diameters, are cut simultaneously, a workpiece with a larger size has a period during which it is cut alone, but when a cutting direction or ingot whose warp value does not deteriorate even when cut alone is adopted as the workpiece with a larger size, it is possible to obtain a good warp value in all the workpieces to be cut.

Meanwhile, for reference, representative values of cutting processing conditions are shown in Table 1.

[Table 1]

Example

Hereinafter, the present invention will be described in detail by way of examples, but the present invention is not limited thereto.

(Reference Example 1)

Using a silicon single crystal with an axial orientation of <111>, cutting was performed with the angle of deviation θ from the <110> direction of the cutting direction being θ=0°, and no second ingot was used. Meanwhile, the cutting time in Reference Example 1 and the Warp value of the wafer obtained in Reference Example 1 were used as reference values for comparative evaluations of the following examples and comparative examples, taking them as reference values (1.0).

(Reference Example 2)

Using a silicon single crystal with an axial orientation of <111>, cutting was performed with the angle of deviation θ from the <110> direction of the cutting direction set to θ=0° and the cutting time set to 1.5 times that of Reference Example 1. The second ingot was not used. The warp value of the wafer after cutting was 0.8.

(Example 1)

As the first ingot, a silicon single crystal with an axial orientation of <111> was used, and the misalignment angle θ ₁ of the cutting direction from the <110> direction was set to θ ₁ = +10°. In addition, as the second ingot, a silicon single crystal with an axial orientation of <111> was used, and the misalignment angle θ ₂ of the cutting direction from the <110> direction was set to θ ₂ = 0°. Then, these two works were cut simultaneously in parallel. The sum of θ (θ ₁ +θ ₂ ) is +10°. Meanwhile, in Example 1-6, the cutting time was 1.5 times that of Reference Example 1. The warp value of the wafer after cutting was 1.0 for the wafer cut from the first ingot, and 1.0 for the wafer cut from the second ingot.

(Example 2)

As the first ingot, a silicon single crystal with an axial orientation of <111> was used, and the misalignment angle θ ₁ from the <110> direction in the cutting direction was set to +20°. In addition, as the second ingot, a silicon single crystal with an axial orientation of <111> was used, and the misalignment angle θ ₂ from the <110> direction in the cutting direction was set to 0°. Then, these two works were cut simultaneously in parallel. The sum of θ (θ ₁ +θ ₂ ) was +20°. Other than this, the cutting conditions were the same as those of Example 1. The warp values of the wafers after cutting were 1.8 for the wafer cut from the first ingot and 1.2 for the wafer cut from the second ingot.

(Example 3)

As the first ingot, a silicon single crystal with an axial orientation of <111> was used, and the misalignment angle θ ₁ of the cutting direction from the <110> direction was set to θ ₁ = +30°. In addition, as the second ingot, a silicon single crystal with an axial orientation of <111> was used, and the misalignment angle θ ₂ of the cutting direction from the <110> direction was set to θ ₂ = 0°. Then, two workpieces were cut simultaneously in parallel. The sum of θ (θ ₁ +θ ₂ ) was +30°. Other than this, the cutting conditions were the same as in Example 1. The warp values of the wafers after cutting were 1.9 for the wafer cut from the first ingot and 1.2 for the wafer cut from the second ingot.

(Example 4)

As the first ingot, a silicon single crystal with an axial orientation of <111> was used, and the misalignment angle θ ₁ of the cutting direction from the <110> direction was set to θ ₁ = +30°. In addition, as the second ingot, a crystal with an axial orientation of <100> was used. Then, two works were cut simultaneously in parallel. The sum of θ (θ ₁ +θ ₂ ) was +30°. Other than this, the cutting conditions were the same as in Example 1. The warp values of the wafers after cutting were 1.9 for those cut from the first ingot and 1.2 for those cut from the second ingot.

(Example 5)

As the first ingot, a silicon single crystal with an axial orientation of <111> was used, and the misalignment angle θ ₁ of the cutting direction from the <110> direction was set to θ ₁ = +30°. In addition, as the second ingot, a silicon single crystal with an axial orientation of <111> was used, and the misalignment angle θ ₂ of the cutting direction from the <110> direction was set to θ ₂ = -30°. Then, two workpieces were cut simultaneously in parallel. The sum of θ (θ ₁ +θ ₂ ) was 0°. Other than this, the cutting conditions were the same as in Example 1. The warp values of the wafers after cutting were 1.5 for those cut from the first ingot and 1.5 for those cut from the second ingot.

(Example 6)

As the first ingot, a silicon single crystal with an axial orientation of <111> was used, and the angle of deviation θ ₁ of the cutting direction from the <110> direction was set to θ ₁ = 0°. In addition, as the second ingot, a silicon single crystal with an axial orientation of <111> was used, and the angle of deviation θ ₂ of the cutting direction from the <110> direction was set to θ ₂ = 0°. Then, two workpieces were cut simultaneously in parallel. The sum of θ (θ ₁ + θ ₂ ) was 0°. Other than this, the cutting conditions were the same as in Example 1. The warp values of the wafers after cutting were 1.0 for those cut from the first ingot and 1.0 for those cut from the second ingot.

(Comparative Example 1)

As the first ingot, a silicon single crystal of the axial orientation <111> was used, and the misalignment angle θ from the <110> direction in the cutting direction was set to θ = +10°. Other than this, the cutting conditions were the same as those of Reference Example 1 (the second ingot was not used). The warp value of the wafer after cutting was 4.0.

(Comparative Example 2)

As the first ingot, a silicon single crystal of the axial orientation <111> was used, and the angle of deviation θ from the <110> direction in the cutting direction was set to θ = +20°. Other than this, the cutting conditions were the same as those of Reference Example 1 (the second ingot was not used). The warp value of the wafer after cutting was 7.0.

(Comparative Example 3)

As the first ingot, a silicon single crystal of the axial orientation <111> was used, and the angle of deviation θ from the <110> direction in the cutting direction was set to θ = +30°. Other than this, the cutting conditions were the same as those of Reference Example 1 (the second ingot was not used). The warp value of the wafer after cutting was 8.2.

(Comparative Example 4)

As the first ingot, a silicon single crystal of the axial orientation <111> was used, and the misalignment angle θ from the <110> direction in the cutting direction was set to θ = -30°. Other than this, the cutting conditions were the same as those of Reference Example 1 (the second ingot was not used). The warp value of the wafer after cutting was 8.8.

(Comparative Example 5)

As the first ingot, a silicon single crystal of the axial orientation <111> was used, and the misalignment angle θ from the <110> direction in the cutting direction was set to θ = +30°. In addition, the cutting time was 1.5 times that of Reference Example 1, and other than this, the cutting conditions were the same as those of Reference Example 1 (the second ingot was not used). The warp value of the wafer after cutting was 3.7.

(Comparative Example 6)

As the first ingot, a silicon single crystal of the axial orientation <111> was used, and the misalignment angle θ from the <110> direction in the cutting direction was set to θ = +30°. In addition, the cutting time was twice that of Reference Example 1. Other than this, the cutting conditions were the same as those of Reference Example 1 (the second ingot was not used). The warp value of the wafer after cutting was 2.1.

(Comparative Example 7)

As the first ingot, a silicon single crystal of the axial orientation <111> was used, and the misalignment angle θ from the <110> direction in the cutting direction was set to θ = +30°. In addition, the cutting time was three times that of Reference Example 1. Other than this, the cutting conditions were the same as those of Reference Example 1 (the second ingot was not used). The warp value of the wafer after cutting was 1.5.

(Comparative Example 8)

As the first ingot, a silicon single crystal with an axial orientation of <111> was used, and the misalignment angle θ ₁ of the cutting direction from the <110> direction was set to θ ₁ = +30°. In addition, as the second ingot, a silicon single crystal with an axial orientation of <111> was used, and the misalignment angle θ ₂ of the cutting direction from the <110> direction was set to θ ₂ = +10°. The total sum of θ (θ ₁ +θ ₂ ) is +40°. Other than this, the cutting conditions were the same as in Example 1. The warp values of the wafers after cutting were 4.0 for those cut from the first ingot and 2.0 for those cut from the second ingot.

(Comparative Example 9)

As the first ingot, a silicon single crystal with an axial orientation of <111> was used, and the misalignment angle θ ₁ of the cutting direction from the <110> direction was set to θ ₁ = -30°. In addition, as the second ingot, a silicon single crystal with an axial orientation of <111> was used, and the misalignment angle θ ₂ of the cutting direction from the <110> direction was set to θ ₂ = -10°. The sum of θ (θ ₁ + θ ₂ ) is -40°. Other than this, the cutting conditions were the same as in Example 1. The warp values of the wafers after cutting were 3.8 for the wafers cut from the first ingot and 2.1 for the wafers cut from the second ingot.

The conditions and experimental results of examples, reference examples, and comparative examples are shown in Table 2.

[Table 2]

Fig. 3 shows the relationship between the misalignment angle θ from the <110> direction of the cutting direction of the single crystal ingot and the Warp value for the wafers obtained in Reference Example 1, Examples 1-3, 6, and Comparative Example 1-3 among the data shown in Table 2. The Warp value was expressed as a relative value with the value of Reference Example 1 as the standard (1.0). For the Examples, it was plotted separately for Ingot 1 and Ingot 2. As shown in Fig. 3, the Warp value of the wafer cut from the Ingot 1 of the Example was significantly lower than the Warp value of the wafer cut from the Ingot of the Comparative Example. In addition, for the Ingot 2 of Example 1 (the misalignment angle θ = 0° from the <110> direction of the cutting direction), it was equivalent to the Warp value of Reference Example 1, and there was no deterioration. Meanwhile, for Example 4, since the type of ingot 2 is different, it is not plotted on the same graph, but as is clear from Table 2, it was confirmed that the Warp value of ingot 2 itself hardly deteriorated, while the deterioration of the Warp value of ingot 1 could be suppressed.

In addition, as is clear from Table 2, in Examples 1-6, the cutting time is 1.5 times that of Reference Example 1, but since two pieces are cut simultaneously, the actual cutting time per work is 0.75 times. That is, it can be seen that productivity is improved while preventing deterioration of the warp value.

Furthermore, as can be clearly seen by comparing the results of Examples 3 and 4 and Comparative Example 5, when a cutting direction in which the Warp value does not deteriorate even when cut alone as the second ingot, or an ingot in which the Warp value does not deteriorate, is used, it was confirmed that the deterioration of the Warp value after cutting of the first ingot was suppressed.

As described above, even when there is only one work, the deterioration of the Warp value can be suppressed by making the cutting time longer (lowering the cutting speed) (Fig. 8, Comparative Examples 4-7). However, as is clear from comparing Example 5 with Comparative Example 7, it can be seen that in Example 5, it is possible to manufacture a wafer having the same Warp value as Comparative Example 7 with four times the productivity (twice the cutting speed, twice the number of cuts).

Meanwhile, the present invention is not limited to the above embodiments. The above embodiments are examples, and any thing that has substantially the same configuration as the technical idea described in the scope of the claims of the present invention and exhibits the same operational effect is included in the technical scope of the present invention.

1, 1': wire guide, 2: wire, 3: wire row
4, 4': work (ingot), 5, 5': work holding unit, 6: control unit,
100: Work cutting processing device (wire saw).

Claims (21)

A plurality of wire guides are arranged at a predetermined interval so that their rotation axes are parallel to each other, and each has grooves formed at a predetermined pitch on its outer surface,
A wire row is formed by a wire wound spirally at a predetermined pitch in the groove of the above wire guide,
As a plurality of works performing cutting, n (n≥2) ingots are installed in parallel,
A method for cutting and processing a workpiece by rotating the wire guide, thereby causing the wire to run in the axial direction, and simultaneously pressing and contacting the plurality of workpieces to the wire row, thereby simultaneously cutting and processing the plurality of workpieces into wafer shapes at multiple locations.
The above work is a single crystal ingot having a central axis direction of <111> or <100>,
At least one of the above plurality of works is a single crystal ingot having a central axis direction of <111>,
When a single crystal ingot whose central axis direction is in the <111> direction is cut with a wire, the angle of deviation from the <110> direction of the cutting direction is θ(°) (wherein, the angles of deviation θ from the (1-10) direction, the (-101) direction, and the (01-1) direction are in both counterclockwise directions, and the angles of deviation θ from the (0-11) direction, the (-110) direction, and the (10-1) direction are in both clockwise directions, and -30°≤θ≤+30°. In addition, θ of a single crystal ingot whose central axis direction is in the <100> direction is set to 0° regardless of the cutting direction.).
The sum of each θ of the above plurality of works (θ ₁ +θ ₂ +···+θ _n ),
-30°≤θ ₁ +θ ₂ +···+θ _n ≤30°
A cutting processing method characterized by performing cutting by setting the cutting direction of each ingot so as to be.
In the first paragraph,
A cutting processing method characterized in that cutting is performed by setting the cutting direction of each ingot so that not all of θ of each of the plurality of works becomes positive or negative.
In the first paragraph,
The sum of the above θ is,
-5°≤θ ₁ +θ ₂ +···+θ _n ≤5°
A cutting processing method characterized by performing cutting by setting it to be.
In the second paragraph,
The sum of the above θ is,
-5°≤θ ₁ +θ ₂ +···+θ _n ≤5°
A cutting processing method characterized by performing cutting by setting it to be.
In the first paragraph,
The sum of the above θ is,
θ ₁ +θ ₂ +···+θ _n = 0°
A cutting processing method characterized by performing cutting by setting it to be.
In the second paragraph,
The sum of the above θ is,
θ ₁ +θ ₂ +···+θ _n = 0°
A cutting processing method characterized by performing cutting by setting it to be.
In the third paragraph,
The sum of the above θ is,
θ ₁ +θ ₂ +···+θ _n = 0°
A cutting processing method characterized by performing cutting by setting it to be.
In paragraph 4,
The sum of the above θ is,
θ ₁ +θ ₂ +···+θ _n = 0°
A cutting processing method characterized by performing cutting by setting it to be.
In any one of claims 1 to 8,
The above plurality of works are referred to as the first ingot and the second ingot,
As the first ingot, a single crystal ingot having a central axis direction of <111> is used, and when the first ingot is cut into wires, the angle of deviation θ ₁ of the cutting direction from the <110> direction is set to be in the range of 0°≤θ ₁ ≤30°.
A cutting processing method characterized in that, when cutting the second ingot into a wire, a single crystal ingot having a central axis direction in the <111> direction is used, the cutting is performed by setting the angle of deviation θ ₂ of the cutting direction from the <110> direction to -30°≤θ ₂ ≤0°.
In any one of claims 1 to 8,
The above plurality of works are referred to as the first ingot and the second ingot,
As the first ingot, a single crystal ingot having a central axis direction of <111> is used, and when the first ingot is cut into a wire, the angle of deviation θ ₁ of the cutting direction from the <110> direction is set to be -30°≤θ ₁ ≤30°.
A cutting processing method characterized in that cutting is performed using an ingot having a central axis direction of <100> as the second ingot.
In Article 9,
A cutting processing method, characterized in that, in the first ingot or the second ingot, the length and diameter of the second ingot are greater than or equal to the length and diameter of the first ingot.
In Article 10,
A cutting processing method, characterized in that, in the first ingot or the second ingot, the length and diameter of the second ingot are greater than or equal to the length and diameter of the first ingot.
A plurality of wire guides are arranged at a predetermined interval so that their rotation axes are parallel to each other, and each has grooves formed at a predetermined pitch on its outer surface,
A wire row formed by a wire wound in a spiral shape at a predetermined pitch in the groove of the above wire guide,
n work holding sections each holding n (n≥2) ingots used as multiple works for cutting;
Control unit,
Equipped with,
A cutting processing device in which the control unit controls the plurality of workpieces to be simultaneously cut into wafer shapes at multiple locations by rotating the wire guide, thereby causing the wire to run in the axial direction, and thereby simultaneously pressing the plurality of workpieces to the wire row.
The above control unit,
By selecting the work from a single crystal ingot having a central axis direction of <111> or <100>,
At least one of the above plurality of works is a single crystal ingot having a central axis direction of <111>,
When a single crystal ingot whose central axis direction is in the <111> direction is cut with a wire, the angle of deviation from the <110> direction of the cutting direction is θ(°) (wherein, the angles of deviation θ from the (1-10) direction, the (-101) direction, and the (01-1) direction are in both counterclockwise directions, and the angles of deviation θ from the (0-11) direction, the (-110) direction, and the (10-1) direction are in both clockwise directions, and -30°≤θ≤+30°. In addition, θ of a single crystal ingot whose central axis direction is in the <100> direction is set to 0° regardless of the cutting direction.).
The sum of each θ of the above plurality of works (θ ₁ +θ ₂ +···+θ _n ),
-30°≤θ ₁ +θ ₂ +···+θ _n ≤30°
A workpiece cutting processing device characterized by controlling cutting by setting the cutting direction of each ingot so as to perform cutting.
In Article 13,
The above control unit,
A workpiece cutting processing device characterized in that control is performed to perform cutting by setting the cutting direction of each ingot so that all of θ of each of the plurality of workpieces does not become positive or negative.
In Article 13,
The above control unit,
The sum of the above θ is,
-5°≤θ ₁ +θ ₂ +···+θ _n ≤5°
A cutting processing device for a workpiece, characterized in that it controls cutting by setting it to be performed.
In Article 14,
The above control unit,
The sum of the above θ is,
-5°≤θ ₁ +θ ₂ +···+θ _n ≤5°
A cutting processing device for a workpiece, characterized in that it controls cutting by setting it to be performed.
In any one of Articles 13 to 16,
The above control unit,
The sum of the above θ is,
θ ₁ +θ ₂ +···+θ _n = 0°
A cutting processing device for a workpiece, characterized in that it controls cutting by setting it to be performed.
In any one of Articles 13 to 16,
The above cutting processing device,
As the above plurality of works, the first ingot and the second ingot are cut,
The above control unit,
As the first ingot, a single crystal ingot having a central axis direction in the <111> direction is used, and when the first ingot is cut into a wire, the cutting direction is set so that the deviation angle θ ₁ from the <110> direction is in the range of 0°≤θ ₁ ≤30°.
A workpiece cutting processing device characterized in that, when cutting the second ingot into a wire, a single crystal ingot having a central axis direction in the <111> direction is used, control is performed so that cutting is performed by setting the cutting direction, when cutting the second ingot into a wire, such that the deviation angle θ ₂ from the <110> direction is -30°≤θ ₂ ≤0°.
In Article 17,
The above cutting processing device,
As the above plurality of works, the first ingot and the second ingot are cut,
The above control unit,
As the first ingot, a single crystal ingot having a central axis direction in the <111> direction is used, and when the first ingot is cut into a wire, the cutting direction is set so that the deviation angle θ ₁ from the <110> direction is in the range of 0°≤θ ₁ ≤30°.
A workpiece cutting processing device characterized in that, when cutting the second ingot into a wire, a single crystal ingot having a central axis direction in the <111> direction is used, control is performed so that cutting is performed by setting the cutting direction, when cutting the second ingot into a wire, such that the deviation angle θ ₂ from the <110> direction is -30°≤θ ₂ ≤0°.
In any one of Articles 13 to 16,
The above cutting processing device,
As the above plurality of works, the first ingot and the second ingot are cut,
The above control unit,
As the first ingot, a single crystal having a central axis direction of <111> is used, and when cutting the first ingot into a wire, the cutting direction is set such that the deviation angle θ ₁ from the <110> direction is -30°≤θ ₁ ≤30°.
A workpiece cutting processing device characterized in that control is performed to perform cutting using an ingot having a central axis direction of <100> as the second ingot.
In Article 17,
The above cutting processing device,
As the above plurality of works, the first ingot and the second ingot are cut,
The above control unit,
As the first ingot, a single crystal having a central axis direction of <111> is used, and when cutting the first ingot into a wire, the cutting direction is set such that the deviation angle θ ₁ from the <110> direction is -30°≤θ ₁ ≤30°.
A workpiece cutting processing device characterized in that control is performed to perform cutting using an ingot having a central axis direction of <100> as the second ingot.