JP6157421B2 - Work cutting method and work holding jig - Google Patents

Description

  The present invention relates to a workpiece cutting method and a workpiece holding jig used at that time.

When a workpiece is cut into a wafer shape with a wire saw, the cut surface is set in a predetermined direction and cut. As the cutting method, first, the axial direction of the workpiece is measured while the workpiece is held and fixed by the workpiece holding jig. Then, based on the measured axis orientation data, fix the workpiece holding jig to the wire saw and adjust the workpiece position so that it matches the crystal axis orientation of the workpiece and the wafer surface orientation required after cutting Disconnect from.
The surface orientation of the workpiece cutting plane can be adjusted by rotating around the axis perpendicular to the center axis between the bottom surfaces of the cylindrical workpieces in the plane parallel to the wire array, and the center axis between the wire array plane and the bottom surface. Adjust by combining actions. Such a method for adjusting the crystal plane orientation of the workpiece is called an inner setup method.

  It is known that when cutting a workpiece, running the wire at an angle farthest from the crystal habit line such as a notch and OF (Orientation Flat) is effective in suppressing the occurrence of cracks in the wafer. (See Patent Document 1).

  In addition to the inner setup method, when fixing the workpiece to the workpiece holding jig, the workpiece is rotated about the central axis passing through the midpoint of the bottom surface of the workpiece and the plane parallel to the wire row surface. There is an external setup system that adjusts the direction by turning. In this outer setup method, the surface orientation of the workpiece is not adjusted in the wire saw.

  On the other hand, the internal setup method allows the workpiece fixed position to be always placed in the crystallographically equivalent position of the workpiece, and the product cut out from the workpiece can be processed with the least damage. Is possible. In particular, in the case of a silicon single crystal, the arrangement of the cleavage plane is known for each crystal axis orientation, and can be known from the relative position between the OF or the notch and the central axis passing through the midpoint of the bottom surface.

JP 2007-90466 A

  However, some azimuth measuring instruments have restrictions on the distance between the measuring part of the azimuth measuring instrument and the bottom surface of the workpiece. In particular, the workpiece length is 3 to the maximum length that can be machined (length of the workpiece holding jig). For / 4 or less, the orientation could not be measured unless the workpiece was fixed on one side of the workpiece holding jig. As a result, the work was forced to be cut while being biased to one side of the wire row of the wire saw. In this method, there is a problem in that the workpiece does not necessarily strike the wire row symmetrically from the start of cutting, causing uneven machining pressure, causing a biased displacement in the workpiece, and causing warp or other warpage to deteriorate.

  The present invention has been made in view of the above-described problems, and can perform azimuth measurement regardless of the restriction on the distance between the measurement unit of the azimuth measuring apparatus and the measurement surface of the workpiece, and can also azimuth while cutting the workpiece. It is an object of the present invention to provide a workpiece cutting method and a holding jig that can suppress the deterioration of warpage when the workpiece is cut without causing displacement.

  In order to achieve the above object, according to the present invention, a workpiece is attached to a beam, the workpiece is held by a workpiece holding jig via the beam, the crystal axis orientation is measured, and then the measured crystal axis is measured. A wire that moves the workpiece held by the workpiece holding jig back and forth in the axial direction to a plurality of grooved rollers after setting the workpiece holding jig on the wire saw while maintaining the orientation so as not to break. Is a workpiece cutting method for cutting a workpiece by pressing against a wire row formed by winding the workpiece, the workpiece holding portion holding the workpiece as the workpiece holding jig, the beam and the workpiece holding portion It is composed of a clamp that can be temporarily fixed by sandwiching the workpiece, and the beam on which the workpiece is attached is slid onto the workpiece holding portion without destroying the crystal axis orientation of the workpiece. Using a clamp having a reference surface that can be used, and temporarily fixing the clamp by sandwiching the beam to which the workpiece is attached and the workpiece holding portion by the clamp, and then measuring the crystal axis orientation, After the measurement, the clamp is removed and the temporary fixation is released, and then the beam is slid along the reference plane, so that the workpiece holding jig is held without breaking the measured crystal axis orientation. The workpiece holder and the beam are permanently bonded and fixed, and after fixing by the permanent bonding, the workpiece holding jig is set on a wire saw to adjust the cutting plane orientation, A work cutting method is provided, wherein the work is cut by pressing the work against the wire row.

  In this way, in measuring the crystal axis orientation of the workpiece, the crystal axis orientation of the workpiece can be measured without being limited by the length of the workpiece. Then, by moving the workpiece to the center of the workpiece holding jig so as not to break the crystal axis orientation of the workpiece, the workpiece can be cut without causing a deviation in the orientation of the workpiece at the center of the wire row of the wire saw. As a result, since the processing pressure is uniformly applied to the workpiece, it is possible to cut out a wafer having a desired plane orientation on the cut surface while suppressing the deterioration and breakage of the wafer warp caused by the uneven processing pressure.

  At this time, a beam having a T shape can be used as the beam.

  If a beam with such a shape is used, when temporarily fixing the beam and the work holding part with a clamp, it can be easily temporarily fixed, and the clamp does not come into contact with the work. Can be prevented.

  At this time, when the beam is slid along the reference plane, a first center mark is previously set at the midpoint of the workpiece holding jig, and a second center mark is set at the midpoint of the workpiece in the beam. It is preferable to move the workpiece to the center of the workpiece holding jig by sliding the beam so that the positions of the first center mark and the second center mark coincide with each other. .

  In this way, the workpiece can be accurately moved to the center portion of the workpiece holding jig by a simpler method, and it is possible to further suppress warpage deterioration and damage caused by uneven machining pressure. .

  At this time, the workpiece can be a short workpiece having a length of 3/4 or less of the length of the workpiece holding jig.

  When measuring the axial orientation of a short workpiece with a length of 3/4 or less of the length of the workpiece holding jig, due to the structure of the bearing measuring device, the short workpiece must be brought close to one of the workpiece holding jigs and fixed. In this case, the orientation could not be measured. For this reason, cutting must be performed while the short workpiece is fixed to one of the workpiece holding jigs. However, in such a work cutting method of the present invention, a short work is slid along the reference plane of the work holding jig, so that even in the inner setup method, the orientation is not limited by the length of the wafer. It is possible to achieve both measurement and cutting of the workpiece without uneven machining pressure.

  At this time, the workpiece may be a silicon single crystal ingot.

  In the cutting method of the present invention, in a silicon single crystal ingot that has been increased in diameter in recent years, for example, even when cutting a short silicon single crystal ingot, a large diameter silicon wafer with less warping and breakage is obtained. Can be obtained.

  Furthermore, in order to achieve the above object, according to the present invention, a workpiece holding jig used for holding the workpiece when measuring the crystal axis orientation of the workpiece and then cutting the workpiece with a wire saw. The workpiece holding jig includes a workpiece holding portion that holds the workpiece, and a clamp that can temporarily fix the beam to which the workpiece is attached to the workpiece holding portion. The beam to which the workpiece is attached has a reference surface that can be slid without breaking the crystal axis direction, and the beam to which the workpiece is attached by the clamp, the workpiece holding portion, The crystal axis orientation is measured after being temporarily fixed by sandwiching, and after the measurement, the clamp is removed and the temporary fixation is released, and then the beam is moved forward. By sliding along the reference plane, the workpiece is moved to the center of the workpiece holding jig without destroying the measured crystal axis orientation, and then the workpiece holder and the beam are bonded together. Thus, a workpiece holding jig is provided which can be fixed and held by a workpiece.

  If it is such, in the measurement of the crystal-axis orientation of a workpiece | work, the crystal-axis orientation of a workpiece | work can be measured without being restrict | limited to the length of a workpiece | work. And since it can be moved to the center part of the workpiece holding jig so as not to break the crystal axis orientation of the workpiece, it can be cut without causing the orientation deviation of the workpiece at the center portion of the wire row of the wire saw. As a result, since the processing pressure is uniformly applied to the workpiece, it becomes possible to cut out a wafer having a desired plane orientation on the cut surface while suppressing the deterioration and breakage of the wafer warp caused by the uneven processing pressure. .

  At this time, the beam may have a T shape.

  If the beam has such a shape, when the beam and the work holding portion are temporarily fixed with the clamp, the beam can be easily temporarily fixed and the clamp does not come into contact with the work, thereby preventing the occurrence of misalignment of the work. It will be a thing.

  The work holding jig has a first center mark at a midpoint thereof, and the beam further has a second center mark at a position of the midpoint of the work, and the first center mark and It is preferable that the workpiece can be moved to the center portion of the workpiece holding jig by sliding the beam along the reference plane so that the positions of the second center marks coincide with each other. .

  If this is the case, the workpiece can be accurately moved to the center of the workpiece holding jig with a simpler structure, and it is possible to further suppress warpage deterioration and damage caused by uneven machining pressure. Can do.

  At this time, it is preferable that the said work holding part has a clearance gap between the said work holding part and the edge part of the adhesion surface of the said beam.

  In this way, if there is a gap at the end of the adhesive surface, the adhesive residue can be released into the gap when the beam attached to the work and the work holding part are permanently bonded with an adhesive. For this reason, uneven adhesion becomes difficult to occur, and it is possible to prevent the occurrence of misalignment due to uneven adhesion.

  The workpiece cutting method and workpiece holding jig of the present invention can measure the crystal axis orientation of the workpiece without being limited by the length of the workpiece in the measurement of the crystal axis orientation of the workpiece. Then, by moving the workpiece to the central portion of the workpiece holding jig so as not to break the crystal axis orientation, the workpiece can be cut at the central portion of the wire row of the wire saw without any misalignment. As a result, it is possible to cut out a wafer having a desired plane orientation on the cut surface while suppressing the deterioration and breakage of the wafer warp.

It is the schematic which shows an example of the workpiece holding jig of this invention. In the workpiece holding jig of this invention, it is the schematic which shows an example at the time of bringing a workpiece | work to one side. It is the schematic which shows an example in the case of hold | maintaining a workpiece | work with the workpiece | work holding jig of this invention, and measuring a crystal orientation axis | shaft. In the workpiece holding jig of this invention, it is the schematic which shows an example at the time of moving a workpiece | work to the center part. It is the schematic which shows an example in the case of hold | maintaining and cut | disconnecting a workpiece | work with the workpiece | work holding jig of this invention. It is the schematic which shows an example of the conventional workpiece holding jig.

Hereinafter, although an embodiment is described about the present invention, the present invention is not limited to this.
As shown in FIG. 6, in the conventional workpiece holding jig 101, the beam 106 to which the workpiece W is attached is permanently bonded and fixed to the workpiece holding unit 102 with an adhesive or the like before measuring the crystal axis orientation. In addition, as described above, there is a limit on the distance between the measuring unit of the orientation measuring device and the bottom surface of the workpiece, and in particular, a short workpiece whose length is 3/4 or less of the length of the workpiece holding jig is workpiece holding. Measurement was not possible unless a workpiece was fixed on one side of the jig. As a result, when adjusting the cut surface of the inner setup method, there is a problem that the workpiece must be cut while being biased to one side of the wire row, causing a biased displacement of the workpiece and causing deterioration of the warp. .

  Therefore, the present inventors have made extensive studies to solve such problems. As a result, when measuring the crystal axis orientation, the beam and the work holder are temporarily fixed by the clamp, and after the crystal axis direction measurement, the temporary fixation is released, and the beam is slid along the reference plane, thereby breaking the crystal axis direction. It was conceived that the workpiece could be easily cut at the center of the wire row by moving the workpiece to the center of the workpiece holding jig, and the present invention was completed.

  Hereinafter, a workpiece holding jig of the present invention and a workpiece cutting method using the holding jig will be described with reference to FIGS.

  First, the workpiece holding jig of the present invention will be described. The workpiece holding jig of the present invention is used to hold a workpiece when measuring the crystal axis orientation of the workpiece, and then set to a wire saw while holding the workpiece, and is also used to hold the workpiece even when cutting the workpiece. Is.

  As shown in FIG. 1, the workpiece holding jig 1 of the present invention includes a workpiece holding portion 2 that holds a workpiece W via a beam 6, and a clamp that can be temporarily fixed by sandwiching the beam 6 and the workpiece holding portion 2. It consists of three.

  As shown in FIG. 1, the clamp 3 can be temporarily fixed by sandwiching the workpiece holding unit 2 and the beam 6, and in particular, in order to measure the crystal axis orientation of the workpiece W, the workpiece W as shown in FIG. When the workpiece is moved to one side of the workpiece holding jig 1, the position of the workpiece W can be temporarily fixed. Further, the clamp 3 is removable, and in particular, after the crystal orientation measurement, the temporary fixing between the workpiece holder 2 and the beam 6 can be released before the workpiece is cut by the wire saw. .

  In the present invention, the clamp 3 temporarily fixes the workpiece W by sandwiching the workpiece holder 2 and the beam 6 when measuring the crystal axis orientation of the workpiece W as described above. Therefore, it is preferable that the shape of the beam 6 be such that the clamp 3 does not contact the workpiece W attached to the beam 6 when the workpiece holding unit 2 and the beam 6 are temporarily fixed by the clamp 3. The beam having such a shape is particularly preferably a beam 6 having a T-shape as shown in FIG.

  If it is T-shaped, it can be clamped easily, and the contact portion of the clamp 3 and the attachment portion of the workpiece W in the beam 6 can be separated into different surfaces, so that the contact between the workpiece W and the clamp 3 is ensured. It can be prevented. As a result, it is possible to prevent the workpiece from being displaced due to the contact of the clamp 3.

  In addition, the work holding unit 2 is provided with a flat reference surface 4. The reference surface 4 has the ingot axis azimuth regardless of the position of the workpiece holding unit 2 by adhering the beam 6 on which the workpiece W is pasted along the reference surface 4. A cutting orientation equivalent to the measurement result can be obtained.

  Such a workpiece holding jig 1 can be easily slid along the reference plane without losing the crystal axis orientation with a simple structure. When the workpiece W is cut by a wire saw, the orientation deviation of the workpiece at the central portion of the wire row. It will be possible to cut without causing.

  In addition, the reference surface 4 requires high shape accuracy in order to allow the workpiece W attached to the beam 6 to slide without breaking the crystal axis orientation. The shape accuracy is not particularly limited, but the flatness of the work holder 2 is within ± 0.3 mm in the longitudinal direction (perpendicular to the paper surface of FIG. 1), and the flatness of the reference surface 4 is within ± 0.1 mm. Preferably there is.

  Further, as shown in FIG. 1, the workpiece holding unit 2 preferably has a gap 5 at the end of the bonding surface between the workpiece holding unit 2 and the beam 6. If there is a gap 5, when the beam 6 to which the workpiece W is attached and the workpiece holding part 2 are bonded together with an adhesive or the like, the adhesive can be released into the gap 5 and leave an extra adhesive on the bonding surface. As a result, there is no adhesion unevenness. Thereby, the orientation shift | offset | difference by adhesion nonuniformity can be prevented.

  Such a workpiece holding jig 1 of the present invention is suitable for holding a short workpiece W having a length of 3/4 or less of the workpiece holding jig 1. If the workpiece holding jig 1 of the present invention is used, even if it is a short workpiece, when measuring the crystal axis orientation, the workpiece W affixed to the beam 6 is used as shown in FIG. The crystal axis orientation can be measured by temporary bonding with the clamp 3 after approaching one end of the crystal. At this time, the thickness of the clamp 3 is not particularly limited, but preferably 1 mm narrower than the combined thickness of the work holding unit 2 and the beam 6 in order to eliminate the temporary adhesion deviation.

  For measuring the crystal axis orientation, as shown in FIG. 3, the workpiece holding jig 1 holding the workpiece W is set in the orientation measuring device. At this time, the crystal axis orientation is measured by bringing one end face of the workpiece W close to the orientation measuring unit 7 that measures the crystal axis orientation by bringing the workpiece W within a certain distance.

  After that, when the workpiece W is cut by the wire saw, the clamp 3 that has been temporarily fixed is removed, and the workpiece W to which the beam 6 is attached and the workpiece holding jig 1 are separated. Then, as shown in FIG. 4, the work W with the beam 6 attached is slid along the reference surface 4 to the center of the work holding jig 1, and fixed by, for example, using an adhesive. can do.

At this time, as shown in FIGS. 2 and 4, a center mark M ₁ is attached to the midpoint of the workpiece holding jig _1, and a second center mark M ₂ is attached to the midpoint of the workpiece W in the beam 6. Then, as shown in FIG. 4, if the beam 6 is slid along the reference plane 4 so that the positions of the center marks M ₁ and M ₂ coincide with each other, the workpiece W is accurately placed at the center of the workpiece holding jig 1. It can be moved.

  At this time, the workpiece W held by the workpiece holding jig 1 can be a silicon single crystal ingot. Silicon single crystal ingots are becoming larger in diameter, and it is often required to cut a large diameter and short ingot. In this case, if the workpiece holding jig 1 as in the present invention is used, a large-diameter silicon wafer with less warping and breakage can be obtained. Of course, the workpiece to be cut is not limited to a silicon single crystal, and may be a compound semiconductor, an oxide single crystal, quartz, or the like.

  With the workpiece holding jig of the present invention as described above, in measuring the crystal axis orientation of the workpiece, the crystal axis orientation of the workpiece can be measured without being limited by the length of the workpiece. And since it can be moved to the center part of the workpiece holding jig so as not to break the crystal axis orientation of the workpiece, it can be cut without causing the orientation deviation of the workpiece at the center portion of the wire row of the wire saw. As a result, since the processing pressure is uniformly applied to the workpiece, it becomes possible to cut out a wafer having a desired plane orientation on the cut surface while suppressing the deterioration and breakage of the wafer warp caused by the uneven processing pressure. .

Next, the work cutting method of the present invention when the work holding jig 1 of the present invention is used will be described.
First, in order to cut the workpiece with high accuracy, it is preferable that the workpiece W is attached to the beam 6 so that the cleavage direction and the traveling direction of the wire are sufficiently separated from each other. In this way, since the wire traveling direction and the cleavage direction can be sufficiently separated during cutting, the wafer is more difficult to crack.

  In this case, since the workpiece W has already had the crystal habit line removed by cylindrical grinding or the like, it can be aligned with reference to a notch or OF engraved on the workpiece as indicated by d in FIG. Next, as shown in FIG. 2, the work W to which the beam 6 is bonded is brought close to one of the work holding jigs 1 and then temporarily fixed by the clamp 3 and held. Then, as shown in FIG. 3, the workpiece holding jig is set on the crystal axis orientation measuring instrument, and the workpiece W is brought close to the orientation measuring unit 7, and then the crystal axis orientation can be measured.

  As the beam, it is particularly preferable to use a beam 6 having a T shape as shown in FIG. If it is T-shaped, the contact portion of the clamp 3 and the attachment portion of the workpiece W in the beam 6 can be separated into different surfaces, and can be easily clamped, and the workpiece W and the clamp 3 can be reliably secured. Can be prevented. As a result, it is possible to prevent the deviation of the workpiece orientation due to the contact of the clamp.

  After that, when the workpiece W is cut by the wire saw, the clamp 3 that has been temporarily fixed is removed, and the workpiece W to which the beam 6 is attached and the workpiece holding jig 1 are separated. Then, as shown in FIG. 4, the workpiece W to which the beam 6 is attached can be slid along the reference surface to the center portion of the workpiece holding jig 1 to be bonded and held.

At this time, as shown in FIGS. 2 and 4, the center mark M ₁ is attached to the midpoint of the workpiece holding jig 1, and the center mark M ₂ is attached to the midpoint of the workpiece W of the beam 6. Then, as shown in FIG. 4, if the beam 6 is slid along the reference plane 4 to a position where the center marks M ₁ and M ₂ coincide with each other, the workpiece W can be held and held without breaking the measured crystal axis orientation. The tool 1 can be accurately moved to the center.

  Thereafter, the work holding jig 1 is set on the wire saw 8 as shown in FIG. The wire saw 8 is provided with a wire row 9 formed by winding a wire that reciprocates in the axial direction around a plurality of grooved rollers, and the workpiece holding jig 1 is disposed above the wire row 9. . Then, the rotation operation with the axis perpendicular to the central axis between the bottom surfaces (between both end surfaces) of the workpiece W in the plane parallel to the wire row 9 as the rotation axis, the central axis between the bottom surfaces in the plane perpendicular to the wire row 9 The position of the workpiece W is adjusted so that the crystal axis orientation of the workpiece W matches the plane orientation of the wafer required after cutting by combining the tilting operations of rotating the workpiece.

  Further, the adjustment of the cutting plane orientation of the workpiece can be carried out even after the workpiece holding jig 1 is fixed to the wire saw 8 by using a wire saw equipped with a tilt mechanism or the like, for example. Then, the workpiece | work W is cut | disconnected by pushing down and pressing the workpiece | work W to the wire row | line 9.

  With the workpiece cutting method of the present invention as described above, the crystal axis orientation of the workpiece W can be measured without being limited by the length of the workpiece W in the measurement of the crystal axis orientation. Then, by moving the workpiece W to the center portion of the workpiece holding jig 1 so as not to break the crystal axis orientation of the workpiece W, the workpiece can be cut at the center portion of the wire row 9 of the wire saw 8 without causing an orientation shift. As a result, since the processing pressure is uniformly applied to the workpiece W, it is possible to cut out a wafer having a desired plane orientation on the cut surface while suppressing the deterioration and breakage of the wafer warp caused by the uneven processing pressure.

  Furthermore, in the present invention, the workpiece W can be a short workpiece having a length equal to or less than 3/4 of the length of the workpiece holding jig.

  In the internal setup method, when measuring the crystal axis orientation of a short workpiece that is 3/4 or less the length of the workpiece holding jig, due to the structure of the orientation measuring device, the short workpiece is one of the workpiece holding jigs. The orientation could not be measured unless it was fixed to the position. For this reason, cutting must be performed while the short workpiece is fixed to one of the workpiece holding jigs. On the other hand, in the workpiece cutting method of the present invention, by moving the short workpiece by moving the beam, both the measurement of the azimuth without restriction due to the length of the wafer and the cutting of the workpiece without bias of the processing pressure are compatible. can do.

At this time, the workpiece W can be a silicon single crystal ingot.
In recent years, the diameter of silicon single crystals has been particularly increased, and cutting of ingots having a large diameter and a short length is required. Even in this case, a silicon wafer with less warping and breakage can be obtained by the work cutting method of the present invention.

  EXAMPLES Hereinafter, the present invention will be described more specifically with reference to examples and comparative examples of the present invention, but the present invention is not limited to these.

(Examples 1-5)
As shown in FIGS. 1 and 2, a clamp 3 (using a workpiece holding jig 1 (material S50C) and a beam 6 (resin beam manufactured by Nikka Seiko Co., Ltd.) having a flat reference surface 4 is provided. The material S50C) was temporarily fixed, and the workpiece W was brought close to one of the workpiece holding jigs 1 as shown in FIG. Thereafter, the clamp 3 is removed and the temporary fixing is released, and as shown in FIG. 4, the workpiece W is slid to the center along the reference plane 4 of the workpiece holding jig 1 without bonding the crystal axis orientation, and bonded. It was.

  Next, the workpiece holding jig 1 was set on the wire saw 8 as shown in FIG. 5, the cutting plane orientation was adjusted, and the workpiece W was pressed against the wire row 9 and cut. The workpiece to be cut was a silicon single crystal ingot having a diameter of 200 mm and a length ratio of the workpiece length to the length of the workpiece holding jig of 3/4 (= 0.75) or less. The length ratio (work length / work holding jig length) is 0.33 (Example 1), 0.54 (Example 2), and 0.37 (Example 3), respectively. 0.40 (Example 4) and 0.48 (Example 5), silicon single crystal ingots having lengths were repeatedly cut into wafers.

  After the end of cutting, Warp, which is an index of warping of the wafer, was measured with MX204-8-37 manufactured by E & H, which is a wafer shape measuring instrument. The results are shown in Table 1. In the examples and comparative examples, the Warp evaluation index is expressed as follows: (Warp average value of wafers cut out by workpiece / maximum value of Warp in Comparative Example 1) × 100 Warp relative value (%) It was used. Further, the azimuth misalignment was measured by DPGS manufactured by Rigaku, and the misalignment from the target was evaluated.

  As shown in Table 1, the relative values of Warp in Examples 1 to 5 are 43.1 (Example 1), 49.0 (Example 2), 45.8 (Example 3), 36.3 ( Example 4) and 37.4 (Example 5), which were significantly reduced from the comparative example described later, and it was confirmed that the flatness was improved. Therefore, not only normal workpieces but also short workpieces with a length of 3/4 or less of the length of the workpiece holding jig, the warpage of the wafer is worse compared to conventional cutting methods. It was confirmed that cutting can be performed with suppression. Also, the azimuth misalignment was good with little change with respect to the aim.

(Comparative Examples 1-5)
In order not to use the workpiece holding jig 1 of the present invention, that is, to make it possible to measure the crystal axis orientation even with a short workpiece, the workpiece W is held near one of the workpiece holding jigs. The workpiece was cut under the same conditions as in the example except that the cutting was performed in a state where it was brought close to one side. Then, the warp and orientation deviation of the wafer were evaluated by the same method as in the example. However, in Comparative Examples 1 to 5, the length ratios were 0.42 (Comparative Example 1), 0.55 (Comparative Example 2), 0.55 (Comparative Example 3), and 0.44 (Comparative Example 4), respectively. A silicon single crystal ingot having a length of 0.34 (Comparative Example 5) was repeatedly cut into wafers. The results are shown in Table 1.

  In the case of Comparative Examples 1 to 5, the azimuth misalignment was good as in Examples 1 to 5 with almost no change with respect to the target azimuth, but the work could not be cut at the center of the wire row. Since the processing pressure was not applied evenly, the relative values of Warp were 100 (Comparative Example 1), 69.9 (Comparative Example 2), 71.7 (Comparative Example 3), and 66.8 (Comparative Example 4), respectively. ), 59.0 (Comparative Example 5), which was significantly higher than that of the Example, and it was confirmed that the flatness was deteriorated.

  Table 1 summarizes the results of the examples and comparative examples.

  The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the present invention has any configuration that has substantially the same configuration as the technical idea described in the claims of the present invention and that exhibits the same effects. Are included in the technical scope.

DESCRIPTION OF SYMBOLS 1 ... Work holding jig, 2 ... Work holding part, 3 ... Clamp,
4 ... reference plane, 5 ... gap, 6 ... beam,
7: Direction measuring unit, 8 ... Wire saw, 9 ... Wire row,
W ... work, d ... notch or orientation flat.

Claims (9)

After the workpiece is attached to the beam, the workpiece is held by the workpiece holding jig via the beam and the crystal axis orientation is measured, and then the workpiece holding jig is held while holding the measured crystal axis orientation without breaking. By adjusting the cutting plane orientation after setting on the wire saw, the work held by the work holding jig is pressed against a wire row formed by winding a wire that reciprocates in the axial direction on a plurality of grooved rollers. A workpiece cutting method for cutting a workpiece,
The workpiece holding jig includes a workpiece holding portion that holds a workpiece, and a clamp that can be temporarily fixed by sandwiching the beam and the workpiece holding portion, and the beam on which the workpiece is attached to the workpiece holding portion. Using one having a reference plane that can be slid without breaking the crystal axis orientation of the workpiece,
The clamp is temporarily fixed by sandwiching the beam to which the workpiece is attached and the workpiece holding portion, and then measuring the crystal axis orientation,
After the measurement, the clamp is removed and the temporary fixation is released, and then the beam is slid along the reference plane, so that the workpiece holding jig is held without breaking the measured crystal axis orientation. After moving to the center of the workpiece, the work holder and the beam are permanently bonded and fixed,
A method for cutting a workpiece, comprising: setting the workpiece holding jig on a wire saw after fixing by the main bonding, adjusting a cutting plane orientation, and pressing the workpiece against the wire row.   2. The workpiece cutting method according to claim 1, wherein a beam having a T-shape is used as the beam.   When the beam is slid along the reference plane, a first center mark is previously attached to the middle point of the workpiece holding jig, and a second center mark is attached to the middle point of the workpiece in the beam. The workpiece is moved to the center of the workpiece holding jig by sliding the beam so that the positions of the first center mark and the second center mark coincide with each other. The work cutting method according to claim 1 or 2.   The work cutting method according to any one of claims 1 to 3, wherein the work is a short work having a length equal to or less than 3/4 of a length of the work holding jig.   The workpiece cutting method according to any one of claims 1 to 4, wherein the workpiece is a silicon single crystal ingot. A workpiece holding jig used for holding the workpiece when measuring the crystal axis orientation of the workpiece and then cutting the workpiece with a wire saw,
The workpiece holding jig includes a workpiece holding portion that holds a workpiece and a clamp that can temporarily fix a beam to which the workpiece is attached to the workpiece holding portion, and the workpiece is attached to the workpiece holding portion. In addition, the beam has a reference plane that can be slid without breaking the crystal axis orientation,
The clamp is temporarily fixed by sandwiching the beam to which the workpiece is attached and the workpiece holding portion, and then measuring the crystal axis orientation,
After the measurement, the clamp is removed and the temporary fixation is released, and then the beam is slid along the reference plane, so that the workpiece holding jig is held without breaking the measured crystal axis orientation. A workpiece holding jig, wherein the workpiece holder and the beam can be bonded and fixed and held after being moved to the center of the workpiece.   The workpiece holding jig according to claim 6, wherein the beam has a T shape.   The work holding jig has a first center mark at a midpoint thereof, and the beam further has a second center mark at a position of the midpoint of the work, and the first center mark and 7. The workpiece can be moved to a center portion of the workpiece holding jig by sliding the beam so that the positions of the second center marks coincide with each other. The work holding jig according to claim 7.   The workpiece holding jig according to any one of claims 6 to 8, wherein the workpiece holding portion has a gap between end portions of the workpiece holding portion and the bonding surface of the beam. .

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