KR102710354B1 - 기판 프로세싱 장치를 위한 유체 유입 조립체 - Google Patents
기판 프로세싱 장치를 위한 유체 유입 조립체 Download PDFInfo
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- KR102710354B1 KR102710354B1 KR1020237031148A KR20237031148A KR102710354B1 KR 102710354 B1 KR102710354 B1 KR 102710354B1 KR 1020237031148 A KR1020237031148 A KR 1020237031148A KR 20237031148 A KR20237031148 A KR 20237031148A KR 102710354 B1 KR102710354 B1 KR 102710354B1
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- 239000012530 fluid Substances 0.000 title claims abstract description 92
- 239000000758 substrate Substances 0.000 title claims abstract description 22
- 238000006243 chemical reaction Methods 0.000 claims description 58
- 238000006073 displacement reaction Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 description 12
- 238000000231 atomic layer deposition Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000008602 contraction Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 239000002470 thermal conductor Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012713 reactive precursor Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- -1 oxides Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/02—Feed or outlet devices therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/03—Pressure vessels, or vacuum vessels, having closure members or seals specially adapted therefor
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4557—Heated nozzles
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
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- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
도 1은 본 발명의 특정의 예시적인 실시예들에 따른 기판 프로세싱 장치의 일부를 도시한다.
도 2는 도 1의 유체 유입 조립체의 확대 단면도를 도시한다.
도 3은 본 발명의 다른 예시적인 실시예에 따른 유체 유입 조립체의 단면도를 도시한다.
도 4는 선행의 실시예에 개시된 특정 부분들을 도시한다.
도 5a 및 도 5b는 본 발명의 특정 예시적인 실시예들에 따른 기계적인 제한부들의 작동을 도시한다.
도 6은 본 발명의 다른 예시적인 실시예에 따른 유체 유입 조립체의 단면을 도시한다.
도 7은 본 발명의 다른 예시적인 실시예에 따른 유체 유입 조립체의 단면을 도시한다.
도 8은 본 발명의 다른 예시적인 실시예에 따른 유체 유입 조립체의 단면을 도시한다.
도 9는 특정의 예시적인 실시예에 따른 반응 챔버 벽과 유입 파이프 사이의 접촉 지점의 다른 단면을 도시한다.
101. 기판 114. 중간 공간
130. 챔버 벽 140. 외측 챔버 벽
Claims (16)
- 기판 프로세싱 장치를 위한 유체 유입 조립체에 있어서,
밀봉된 압력 용기의 벽을 통과하도록 구성된 유체 유입 파이프로서, 상기 밀봉된 압력 용기는 밀봉된 반응 챔버인 내측 챔버를 둘러싸는 외측 챔버를 형성하는, 상기 유체 유입 파이프;
상기 밀봉된 압력 용기 외부의 상기 유체 유입 파이프 둘레의 탄성 요소; 및
제1 및 제2 단부 부분들
을 포함하고,
상기 탄성 요소는 제1 및 제2 단부 부분들 사이에 결합되는,
유체 유입 조립체.
- 제1항에 있어서,
상기 탄성 요소의 내측 표면 및 외측 표면 중 하나는 상기 밀봉된 압력 용기내에 퍼져 있는 압력을 받고, 상기 탄성 요소의 내측 표면 및 외측 표면 중 다른 하나는 상기 밀봉된 압력 용기 외부에 퍼져 있는 주변 압력을 받고, 상기 유체 유입 파이프는 내부에서 운반되는 유체가 탄성 요소와 접촉되는 것을 방지하는,
유체 유입 조립체.
- 제1항에 있어서,
상기 탄성 요소는 유체 유입 조립체의 제1 및 제2 단부 부분들 사이의 변위하에 변형되도록 구성되는,
유체 유입 조립체.
- 제1항에 있어서,
상기 탄성 요소는 상기 유체 유입 파이프에 기계적인 압력을 일으키도록 구성되는,
유체 유입 조립체.
- 제4항에 있어서,
상기 기계적인 압력의 방향은 상기 밀봉된 압력 용기의 내부를 향해 내향인,
유체 유입 조립체.
- 제1항에 있어서,
상기 제1 및 제2 단부 부분들 사이에 결합되며, 상기 유체 유입 파이프의 종축의 방향으로 조절가능한 길이를 갖는 적어도 하나의 조절가능한 제한부를 포함하는,
유체 유입 조립체.
- 제6항에 있어서,
상기 유체 유입 파이프 둘레의 상기 탄성 요소는 상기 유체 유입 파이프와 상기 적어도 하나의 조절가능한 제한부 사이에 위치되는,
유체 유입 조립체.
- 제6항에 있어서,
상기 적어도 하나의 조절가능한 제한부는 상기 탄성 요소의 움직임, 그로 인해 상기 유체 유입 조립체의 움직임을 제한하도록 구성되는,
유체 유입 조립체.
- 제6항에 있어서,
상기 탄성 요소는 적어도 상기 적어도 하나의 조절가능한 제한부와 동일한 방향으로 변형하도록 구성되는,
유체 유입 조립체.
- 제1항에 있어서,
상기 유체 유입 파이프를 따라서 열을 분배하도록 상기 유체 유입 파이프 둘레에 적어도 하나의 열 분배 요소를 포함하는,
유체 유입 조립체.
- 제10항에 있어서,
상기 적어도 하나의 열 분배 요소는 상기 밀봉된 압력 용기 외부의 상기 유체 유입 파이프의 길이에 걸쳐 그리고 상기 밀봉된 압력 용기의 벽의 피드쓰루(feed-through) 지점에 걸쳐 연장되거나, 또는 상기 적어도 하나의 열 분배 요소는 상기 유체 유입 파이프의 전체 길이에 걸쳐 연장되는,
유체 유입 조립체.
- 제10항에 있어서,
상기 적어도 하나의 열 분배 요소는 상기 유체 유입 파이프 내의 유체에 대한 온도 차이를 평형화시키고 바람직한 열 그래디언트(heat gradient)를 생성하도록 구성되는,
유체 유입 조립체.
- 제10항에 있어서,
상기 유체 유입 파이프는 상기 밀봉된 반응 챔버와 접촉 지점을 갖도록 구성되는,
유체 유입 조립체.
- 제1항에 있어서,
상기 유체 유입 파이프는 내측에서 서로 미끄러지도록 배치된 2개의 파이프들로 형성되는,
유체 유입 조립체.
- 제1항에 있어서,
상기 유체 유입 파이프는, 상기 유체 유입 파이프의 적어도 일부를 제거함으로써 분해되도록 구성되는,
유체 유입 조립체.
- 제1항에 있어서,
상기 유체 유입 파이프는 상기 밀봉된 압력 용기의 벽에 대하여 고정된 위치에 있도록 구성되는,
유체 유입 조립체.
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Application Number | Priority Date | Filing Date | Title |
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PCT/FI2017/050465 WO2018234611A1 (en) | 2017-06-21 | 2017-06-21 | APPARATUS AND METHOD FOR PROCESSING SUBSTRATE |
KR1020207000511A KR102580523B1 (ko) | 2017-06-21 | 2017-06-21 | 기판 프로세싱 장치 및 방법 |
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KR1020207000511A Division KR102580523B1 (ko) | 2017-06-21 | 2017-06-21 | 기판 프로세싱 장치 및 방법 |
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KR20230133948A KR20230133948A (ko) | 2023-09-19 |
KR102710354B1 true KR102710354B1 (ko) | 2024-09-26 |
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KR1020237031148A Active KR102710354B1 (ko) | 2017-06-21 | 2017-06-21 | 기판 프로세싱 장치를 위한 유체 유입 조립체 |
KR1020207000511A Active KR102580523B1 (ko) | 2017-06-21 | 2017-06-21 | 기판 프로세싱 장치 및 방법 |
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US (2) | US11505864B2 (ko) |
EP (1) | EP3642386B1 (ko) |
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KR (2) | KR102710354B1 (ko) |
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KR102710354B1 (ko) | 2017-06-21 | 2024-09-26 | 피코순 오와이 | 기판 프로세싱 장치를 위한 유체 유입 조립체 |
SG11202112720QA (en) * | 2019-06-06 | 2021-12-30 | Picosun Oy | Porous inlet |
FI128855B (en) | 2019-09-24 | 2021-01-29 | Picosun Oy | FLUID DISTRIBUTOR FOR THIN FILM GROWING EQUIPMENT, RELATED EQUIPMENT AND METHODS |
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EP3642386C0 (en) | 2024-04-03 |
JP2020528491A (ja) | 2020-09-24 |
EP3642386B1 (en) | 2024-04-03 |
US20230090809A1 (en) | 2023-03-23 |
EP3642386A1 (en) | 2020-04-29 |
CN110770365A (zh) | 2020-02-07 |
JP2023017951A (ja) | 2023-02-07 |
JP7623991B2 (ja) | 2025-01-29 |
KR20200020783A (ko) | 2020-02-26 |
US12110588B2 (en) | 2024-10-08 |
KR20230133948A (ko) | 2023-09-19 |
JP7177099B2 (ja) | 2022-11-22 |
TWI775860B (zh) | 2022-09-01 |
TW201905232A (zh) | 2019-02-01 |
US11505864B2 (en) | 2022-11-22 |
US20210189560A1 (en) | 2021-06-24 |
EP3642386A4 (en) | 2020-07-08 |
WO2018234611A1 (en) | 2018-12-27 |
KR102580523B1 (ko) | 2023-09-20 |
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