KR102567568B1 - Semiconductor Package - Google Patents

Abstract

A semiconductor device package according to the present invention includes a body including a cavity, a plurality of lead frames disposed and buried in the body, disposed in the cavity, a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and the first conductivity type semiconductor layer. A semiconductor device including a semiconductor structure including an active layer disposed between the type semiconductor layer and the second conductivity type semiconductor layer and a light-transmitting substrate disposed on the semiconductor structure, a wavelength conversion layer disposed on the semiconductor device, and the semiconductor device A resin part disposed between side surfaces and a lower surface of the wavelength conversion layer, and the body surrounds a first body disposed between the plurality of lead frames, the semiconductor element, four side surfaces of the wavelength conversion layer, and an outer surface of the lead frame. and a second body, the resin part overlapping the second body and the wavelength conversion layer in a direction perpendicular to the light-transmissive substrate.

Description

Semiconductor device package {Semiconductor Package}

The present invention relates to a semiconductor device package and a method of providing a semiconductor device package. More specifically, the present invention relates to a semiconductor device package capable of improving reliability of a semiconductor device package and preventing material deformation caused by heat and light, and a method of providing the semiconductor device package.

Semiconductor elements including compounds such as GaN, AlGaN, InGaN, InAlGaN, GaAs, AlGaAs, InGaAs, GaP, AlGaInP, and InP have many advantages, such as having a wide band gap energy that can be easily adjusted. and various diodes.

In particular, light emitting devices such as light emitting diodes or laser diodes using compound semiconductor materials such as group 3-5 or group 2-6 of semiconductors have developed thin film growth technology and device materials to produce red and green colors. It can implement various colors such as blue and ultraviolet rays, and it is possible to implement white light with high efficiency by using fluorescent materials or adjusting the color. It has the advantages of response speed, stability, and environmental friendliness.

In addition, when light-receiving devices such as photodetectors or solar cells are manufactured using group 3-5 or group 2-6 compound semiconductor materials of semiconductors, light in various wavelength ranges is absorbed by the development of device materials to generate photocurrent. By absorbing light in various wavelength ranges from gamma rays to radio wavelength ranges, light in various wavelength ranges from gamma rays to radio wavelength ranges can be used. In addition, since it has the advantages of fast response speed, stability, environmental friendliness, and easy control of element materials, it can be easily used in power control or ultra-harmonic circuits or communication modules.

Therefore, the semiconductor device can replace a transmission module of an optical communication means, a light emitting diode backlight that replaces a Cold Cathode Fluorescence Lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, and can replace a fluorescent lamp or an incandescent lamp. Applications such as white light emitting diode lighting devices, automobile headlights and traffic lights, sensors that detect gas or fire, and medical devices are expanding, and furthermore, applications are expanding to high-frequency application circuits, other power control devices, and communication modules.

Since semiconductor devices used in various fields may be damaged by heat and light and thus have reduced reliability, a structure of a semiconductor device package capable of improving reliability by improving this is required. The present invention relates to this.

A technical problem to be solved by the present invention is to provide a semiconductor device package with improved reliability.

Another technical problem to be solved by the present invention is to provide a high quality semiconductor device package by preventing material deformation caused by heat and light.

The technical problems of the present invention are not limited to the technical problems mentioned above, and other technical problems not mentioned will be clearly understood by those skilled in the art from the description below.

A semiconductor device package according to an embodiment of the present invention includes a body including a cavity, a plurality of lead frames disposed and buried in the body, a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and a plurality of lead frames disposed in the cavity. A semiconductor device including a semiconductor structure including an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer and a light-transmitting substrate disposed on the semiconductor structure, and a wavelength conversion layer disposed on the semiconductor device and a resin portion disposed between a side surface of the semiconductor element and a lower surface of the wavelength conversion layer, wherein the body includes a first body disposed between the plurality of lead frames, the semiconductor element, and four side surfaces of the wavelength conversion layer and the lead frame. A second body may be disposed surrounding an outer surface, and the resin part may overlap the second body and the wavelength conversion layer in a direction perpendicular to the light-transmitting substrate.

According to one embodiment, the plurality of lead frames are disposed with a separation distance in a first direction, and the separation distance may be 150 um or more and 250 um or less.

According to an embodiment, a partial region of the plurality of lead frames may be exposed within the cavity.

According to one embodiment, at least one of the plurality of lead frames may be exposed to an outer surface of the body.

According to one embodiment, the constituent materials of the first body and the second body may be the same.

According to one embodiment, the body may be made of any one of organic and inorganic materials.

According to one embodiment, when the body is made of an inorganic material, the body may include TiO, Bn, or ZnO.

According to one embodiment, when the body is made of an organic material, it may be made of TiO ₂ and silicon.

According to one embodiment, the outer surface of the body may be disposed extending in a first direction from the outer surface of the plurality of lead frames.

According to one embodiment, one surface of the wavelength conversion layer may be disposed on the same plane as one surface of the body.

According to the present invention, there is an effect that the reliability of a semiconductor device package can be improved.

According to the present invention, there is an effect that it is possible to provide a high quality semiconductor device package by preventing material deformation caused by heat and light.

The effects of the present invention are not limited to the effects mentioned above, and other effects not mentioned will be clearly understood by those skilled in the art from the description below.

1 is a cross-sectional view of a semiconductor device according to an exemplary embodiment of the present invention.
2 is a perspective view of a semiconductor device package according to an exemplary embodiment of the present invention.
FIG. 3 is a cross-sectional view of a semiconductor device package according to an exemplary embodiment taken in the direction A-A′ in FIG. 1 .
4 is a view showing the inside of a semiconductor device package according to an embodiment of the present invention.
5 is a diagram for explaining a method of manufacturing a semiconductor device package according to an embodiment of the present invention.

The foregoing objects and technical configurations of the present invention and the details of the operation and effect thereof will be more clearly understood by the following detailed description.

In the description of the present invention, terms such as first and second used below are only identification symbols for distinguishing the same or corresponding components, and the same or corresponding components are referred to as first, second, etc. is not limited by

Singular expressions include plural expressions unless the context clearly dictates otherwise. Terms such as “include” or “have” are intended to designate that a feature, number, step, operation, component, part, or combination thereof described in the specification exists, and one or more other features, numbers, or steps , operations, components, parts, or combinations thereof may be interpreted as being capable of being added.

As used herein, “comprises” and/or “comprising” means that a stated component, step, operation, and/or element refers to the presence or absence of one or more other components, steps, operations, and/or elements; do not rule out additions.

In the description of the present invention, each layer (film), region, pattern or structure may be "on" or "under/under" the substrate, each layer (film), region, pad or pattern. The description of "formed on" includes all formed directly or through another layer. The criteria for upper/upper or lower/lower of each layer will be described based on drawings.

Hereinafter, a semiconductor device package 200 according to an exemplary embodiment of the present invention will be described in detail with reference to the accompanying drawings.

First, referring to FIG. 1 , a semiconductor device 110 according to an exemplary embodiment of the present invention will be described.

1 is a cross-sectional view of a semiconductor device 110 according to an embodiment of the present invention.

The semiconductor device 110 according to an embodiment of the present invention may be a flip chip type light emitting device. The flip chip type light emitting device may be a transmissive flip chip light emitting device that emits light in six directions, and includes a light transmitting substrate 114, a semiconductor structure 113, a first bonding unit 117, and a first bonding unit 117. 2 may include a bonding unit 118 .

The light-transmitting substrate 114 may be disposed on the semiconductor structure 113 . The light-transmitting substrate 114 may be formed of one or more components selected from a group including a sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge.

The semiconductor structure 113 may be implemented as a compound semiconductor. The light emitting structure may be provided as a Group 2-6 or Group 3-5 compound semiconductor, for example. As another example, the semiconductor structure 113 includes at least two elements selected from aluminum (Al), gallium (Ga), indium (In), phosphorus (P), arsenic (As), and nitrogen (N). can be implemented.

Meanwhile, the semiconductor structure 113 is disposed between the first conductivity type semiconductor layer 113a, the second conductivity type semiconductor layer 113c, and the first conductivity type semiconductor layer 113a and the second conductivity type semiconductor layer 113c. may include an active layer 113b.

The first conductivity-type semiconductor layer 113a may be implemented with at least one of Group 3-5 or Group 2-6 compound semiconductors, and more specifically. It can be implemented as a semiconductor material having a composition formula of InxAlyGa1-x-yN (0≤x≤1, 0≤y≤1, 0≤x+y≤1). For example, the first conductivity type semiconductor layer 113a includes at least one selected from the group including GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like. can do.

Also, the first conductivity-type semiconductor layer 113a may be an n-type semiconductor layer doped with an n-type dopant such as Si, Ge, Sn, Se, or Te.

The active layer 113b may be disposed between the first conductivity type semiconductor layer 113a and the second conductivity type semiconductor layer 113c. The active layer 113b is a layer where electrons (or holes) injected through the first conductivity-type semiconductor layer 113a and holes (or electrons) injected through the second conductivity-type semiconductor layer 113c meet. This recombination transitions to a lower energy level and can generate light having an ultraviolet wavelength.

On the other hand, the active layer 113b includes a well layer and a barrier layer, and has any one of a single well structure, a multi well structure, a single quantum well structure, a multi quantum well (MQW) structure, a quantum dot structure, or a quantum wire structure. For example, when the active layer 113b is implemented as a multi-well structure, the active layer 113b may include a plurality of well layers and a plurality of barrier layers alternately disposed.

The second conductivity-type semiconductor layer 113c is disposed on the active layer 113b, and may be implemented with a compound semiconductor of group 4 or 6, and more specifically, Inx5Aly2Ga1-x5-y2N (0≤x5≤1, 0 ≤y2≤1, 0≤x5+y2≤1) may be implemented as a semiconductor material having a composition formula. For example, the second conductive semiconductor layer 113c may include InGaN/GaN, GaN/AlGaN, AlGaN/AlGaN, InGaN/AlGaN, InGaN/InGaN, AlGaAs/GaAs, InGaAs/GaAs, InGaP/GaP, AlInGaP/InGaP, It may include at least one selected from a group including InP/GaAs.

Also, the second conductive semiconductor layer 113c may be a p-type semiconductor layer doped with a p-type dopant such as Mg, Zn, Ca, Sr, or Ba.

The semiconductor device 110 according to an embodiment of the present invention may include a first bonding part 117 and a second bonding part 118, and the first bonding part 117 and the second bonding part 118 ) through which current may flow to the semiconductor device 110 .

The first bonding unit 117 and the second bonding unit 118 may be disposed on one surface of the semiconductor structure 113, may be spaced apart from each other, and the first bonding unit 117 and the second bonding unit 118 ) through which current may flow to the semiconductor device 110 .

The first bonding portion 117 may be electrically connected to the first conductive semiconductor layer 113a and may include a first pad bonding portion 115 and a first branch bonding portion 111 .

The second bonding part 118 may be electrically connected to the second conductivity type semiconductor layer 113c and may include a second pad bonding part 116 and a second branch bonding part 112 .

Power supplied through the first pad bonding unit 115 and the second pad bonding unit 116 is diffused throughout the semiconductor structure 113 by the first branch bonding unit 111 and the second branch bonding unit 115 . can become

Meanwhile, the first bonding unit 117 and the second bonding unit 118 may have a single-layer or multi-layer structure. For example, the first bonding part 117 and the second bonding part 118 may be ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO, Ag , Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf at least one or an alloy of two or more of these materials. For another example, the first bonding unit 117 and the second bonding unit 118 may be ohmic electrodes.

Meanwhile, the semiconductor structure 113 may further include a protective layer (not shown), and may be provided on a top or side surface of the semiconductor structure 113 .

Such a protective layer (not shown) may be provided to expose the first pad bonding portion 115 and the second pad bonding portion 116 .

In addition, a protective layer (not shown) may be selectively provided on the circumference and lower surface of the light-transmitting substrate 114 . For example, the protective layer (not shown) may be implemented with at least one material selected from a group including SixOy, SiOxNy, SixNy, and AlxOy.

In the semiconductor device 110 according to an embodiment of the present invention described above, light generated in the active layer 113b may be emitted in directions of six surfaces of the semiconductor device 110 . More specifically, light generated in the active layer 113b may be emitted in six directions through the upper and lower surfaces of the semiconductor device 110 and four side surfaces.

Hereinafter, a semiconductor device package 200 according to an exemplary embodiment of the present invention will be described with reference to FIGS. 2 to 4 .

The semiconductor device package 200 according to an embodiment of the present invention may include various electronic devices such as a light emitting device and a light receiving device, and the light emitting device may be a UV light emitting device or a blue light emitting device. The light emitting device emits light by recombination of electrons and holes, and the wavelength of this light is determined by a material's own energy bandgap, and can emit light within a wavelength range from ultraviolet to visible light.

2 is a perspective view of a semiconductor device package 200 according to an embodiment of the present invention.

Referring to FIG. 2 , it can be seen that the semiconductor device package 200 according to an exemplary embodiment includes a body 130 and a wavelength conversion layer 150 .

The body 130 may be disposed surrounding the four side surfaces of the wavelength conversion layer 150 . The body 130 may prevent irregular reflection of light emitted from the semiconductor device 110 and improve the luminous flux of the semiconductor device package 200 .

The wavelength conversion layer 150 may convert a wavelength of light emitted to the outside when light incident to the wavelength conversion layer 150 from the semiconductor device 110 is emitted to the outside.

The wavelength conversion layer 150 may be implemented with a polymer resin containing a wavelength conversion material. The wavelength conversion material may be a phosphor and may include one or more of a sulfide-based, oxide-based, or nitride-based compound. not necessarily limited

Here, the polymer resin may include one or more of a transparent epoxy resin, a silicone resin, a polyimide resin, a urea resin, and an acrylic resin, but is not necessarily limited thereto.

In addition, the type of phosphor may be determined according to the wavelength of light emitted from the semiconductor device 110 in order to implement a color desired by the user. For example, when the semiconductor device 110 emits light in an ultraviolet wavelength band, green phosphors, blue phosphors, and red phosphors may be selected as phosphors. When the semiconductor device 110 emits light in a blue wavelength range, a yellow phosphor, a combination of a red phosphor and a green phosphor, or a combination of a yellow phosphor, a red phosphor, and a green phosphor may be selected as the phosphor.

Meanwhile, the semiconductor device package 200 according to an embodiment of the present invention may include the semiconductor device 110, the resin part 170, and the lead frame 190 in the body 130. For this, see FIG. 3 Refer to and explain.

FIG. 3 is a cross-sectional view of the semiconductor device package 200 according to the exemplary embodiment shown in FIG. 2 taken in the direction A-A'.

Referring to FIG. 3 , the body 130 may include a cavity S, and it can be seen that the semiconductor device 110 is disposed in the cavity S. More specifically, the body 130 has a cavity S. It may include an inner surface and an outer surface forming (S), and the inner surface of the body 130 may be disposed to contact the side surface of the semiconductor device 110. At this time, it may be partially or wholly in contact. In the case of partial contact, an air gap may be formed between the side surface of the semiconductor device 110 and the inner surface of the body 130 . In addition, an inner surface of the body 130 may be disposed to surround four side surfaces of the resin part 170 and the wavelength conversion layer 150 . More specifically, the inner surface of the body 130 may contact the resin part 170 or/and the wavelength conversion layer 150 . At this time, the inner surface of the body 130 may directly contact the resin part 170 or/and the wavelength conversion layer 150 . The outer surface may be disposed extending from the outer surface of the lead frame 190 at a distance d2 in the first direction. In this case, the first direction is defined as a horizontal direction, but is not necessarily limited thereto.

The distance d2 in the first direction between the outer surface of the body 130 and the outer surface of the lead frame 190 has a ratio of 1% to 10% compared to the distance d1 of the body 130 in the first direction. can When the ratio is 1% or more, when an external impact is applied, the internal structure of the semiconductor device package 200 may be protected and reliability of the semiconductor device package 200 may be secured.

In addition, when the ratio is 10% or less, since more semiconductor device packages 200 can be manufactured compared to the same area, the process yield of the semiconductor device packages 200 can be improved.

Although not shown, according to an embodiment of the present invention, the inner surface of the body 130 forming the cavity (S) and the first bonding portion 117 and the second bonding portion 118 of the semiconductor device 110, other You can include space between the sides. By including a space between the inner surface of the body 130 and the outer surfaces of the first bonding portion 117 and the second bonding portion 118, when the semiconductor device 110 is placed in the cavity S, tolerances are taken into account and semiconductor Reliability of the device package 200 may be secured.

The body 130 includes a first body 130-1 disposed between a plurality of lead frames 190 and a second body 130 disposed surrounding four side surfaces of the semiconductor element 110 and the wavelength conversion layer 150. -2) may be included.

Meanwhile, the constituent materials of the first body 130-1 and the second body 130-2 may be the same. By making the constituent materials of the first body 130-1 and the second body 130-2 the same, the manufacturing process is simplified and the process time and yield of the semiconductor device package 200 can be improved. More specifically, the first body 130-1 and the second body 130-2 may be integrally formed to form one body 130.

The body 130 may be made of any one of organic and inorganic materials.

When the body 130 is made of an organic material, it may be made of a resin containing a reflective material. For example, the resin may be one or more of epoxy molding compound (EMC), white silicone resin, silicone molding compound (SMC), polyimide resin, urea resin, and acrylic resin, and the reflective material may be TiO ₂ or SiO ₂ , but is not limited thereto. For example, the body 130 may include TiO2 and a silicone resin.

When the body 130 is made of an inorganic material, it may be made of ceramic. For example, TiO, Bn, and ZnO may be included, and durability and heat resistance of the semiconductor device package 200 according to an exemplary embodiment may be improved.

Meanwhile, when the body 130 is made of an inorganic material, a heat spreader may be further included. These heat spreaders can be defined as powder particles, grains, fillers, and additives of a predetermined size, and examples include oxides, nitrides, fluorides, It may include at least one sulfide material, but is not necessarily limited thereto.

Meanwhile, the lead frame 190 may be buried and disposed in the body 130 . More specifically, a plurality of lead frames 190 may be embedded in the body 130 with a predetermined separation distance. The distance between the plurality of lead frames 190 will be described later in the description of the lead frame 190 .

On the other hand, the cavity (S) included in the body 130 may be implemented in a shape in which the width of the upper part in the horizontal direction is greater than the width of the lower part in the horizontal direction, and a structure concave from the upper surface to the lower surface of the body 130, for example, For example, it may include a recess structure or a cup structure.

The side surface of the cavity S may be an inclined surface that is inclined inward from the upper surface to the lower surface, and light emitted from the side surface of the semiconductor device 110 may be reflected through the inclined surface, thereby increasing light extraction efficiency.

The upper shape of the cavity S may include a polygonal shape, a circular shape, an elliptical shape, or a shape in which the corner of the polygonal shape is a curved surface.

The wavelength conversion layer 150 may be disposed on the semiconductor device 110 in the cavity S.

Meanwhile, an area of the wavelength conversion layer 150 may be larger than that of the semiconductor device 110 . A length W2 of the wavelength conversion layer 150 in the first direction may be greater than a length W1 of the semiconductor device 110 in the first direction. More specifically, the ratio of the length W2 of the wavelength conversion layer 150 in the first direction to the length W1 of the semiconductor device 110 in the first direction may be 1.01 or more and 1.50 or less.

When the ratio of the length W2 of the first direction of the wavelength conversion layer 150 to the length W1 of the semiconductor device 110 in the first direction is 1.01 or more, light emitted from the side of the semiconductor device 110 is emitted from the wavelength conversion layer. The wavelength is converted at 150, so that the light flux of the semiconductor device package 200 can be improved. When the ratio of the length W2 of the wavelength conversion layer 150 in the first direction to the length W1 of the semiconductor device 110 in the first direction is 1.50 or less, an area where the body 130 is disposed is secured to prevent diffuse reflection. Therefore, the luminous intensity and light efficiency of the semiconductor device package 200 may be improved. Here, the first direction may be a horizontal direction and the second direction may be a vertical direction, but is not necessarily limited thereto.

In addition, a length W2 of the wavelength conversion layer 150 in the first direction may be equal to a length W2 in a second direction perpendicular to the first direction.

Meanwhile, one surface of the wavelength conversion layer 150 may be disposed on the same plane as one surface of the body 130, and more specifically, the upper surface of the wavelength conversion layer 150 is on the same plane as the upper surface of the body 130. can be placed in

The resin part 170 may be disposed between the side surface of the semiconductor element 110 and the lower surface of the wavelength conversion layer 150, and the resin part 170 may contact the side surface of the semiconductor element 110 and the inner side surface of the body 130. can In other words, the resin part 170 may surround four side surfaces of the semiconductor device 110 and form a closed loop.

More specifically, the resin portion 170 is integrally formed between the upper surface of the semiconductor element 110 and the lower surface of the wavelength conversion layer 150 and between the side surface of the semiconductor element 110 and the lower surface of the wavelength conversion layer 150. It can serve as an adhesive layer.

In addition, the resin part 170 overlaps the second body 130-2, the wavelength conversion layer 150, and the top surface of the light-transmitting substrate 114 in a direction perpendicular to the upper surface of the light-transmitting substrate 114, like the first line (I). The resin part 170 may be disposed to partially or wholly contact the second body 130-2.

By disposing the resin part 170 in this way, the semiconductor device 110 and the body 130 are firmly attached, so that the reliability of the semiconductor device package 200 can be improved.

Meanwhile, the resin part 170 may include an inclined surface corresponding to a side surface of the cavity S included in the body 130 . In the case of including an inclined surface corresponding to the side surface of the cavity S, the semiconductor element 110 and the body 130 are firmly attached between the side surface of the semiconductor element 110 and the inner surface of the body 130, and the semiconductor element package The reliability of (200) can be improved.

On the other hand, the resin part 170 may also be disposed between the upper surface of the semiconductor element 110 and the lower surface of the wavelength conversion layer 150 .

Here, the resin part 170 may be implemented with transparent silicone resin, epoxy, etc. in order to reduce the loss of light emitted from the semiconductor element 110, but is not necessarily limited thereto.

The lead frame 190 receives power from the outside, and accordingly, when power is supplied to the lead frame 190 , power may be applied to the entire semiconductor device 110 .

The lead frame 190 is composed of a plurality of pieces, and the semiconductor device 110 may be disposed on one side of the plurality of lead frames 190. More specifically, the plurality of lead frames 190 may include the semiconductor device 110 and the semiconductor device 110. It may be in direct contact or electrically connected through an adhesive (not shown).

Here, the adhesive may be implemented with a conductive material, and for example, the adhesive may be a solder paste.

Also, the plurality of lead frames 190 may be electrically connected to the semiconductor device 110 by wire bonding, flip bonding, die bonding, or the like.

Meanwhile, the plurality of lead frames 190 may be disposed in the cavity S with a partial area exposed. Semiconductor devices 110 may be disposed on partial regions of the plurality of lead frames 190 that are exposed, and may be electrically connected to the semiconductor devices 110 .

A plurality of lead frames 190 may be disposed in the body 130 with a distance L in the first direction. More specifically, the plurality of lead frames 190 may be disposed with the same separation distance (L) in the first direction, or may be disposed with different separation distances (L).

Here, the separation distance (L) may be 150um or more to 250um or less.

When the separation distance L is greater than or equal to 150 um, heat generated from the semiconductor device 110 is released, the heat dissipation characteristics of the semiconductor device package 200 are improved, and the plurality of lead frames 190 can be electrically separated. . When the separation distance (L) is 250 um or less, it is possible to secure an area where the semiconductor device 110 is attached on the lead frame 190, and to prevent an increase in the area of the semiconductor device package 200, so that the semiconductor device package The manufacturing yield of (200) can be improved.

The plurality of lead frames 190 may be disposed with the same thickness (h), where the thickness (h) may be greater than or equal to 0.1 mm and less than or equal to 0.3 mm.

When the thickness h is greater than or equal to 0.1 mm, heat generated from the semiconductor device 110 is well dissipated, so that the reliability of the semiconductor device package 200 can be secured.

When the thickness (h) is 0.3 mm or less, a space in which the semiconductor device 110 and the wavelength conversion layer 150 are disposed on the lead frame 190 can be secured, so that the overall thickness of the semiconductor device package 200 increases. Therefore, the process yield of the semiconductor device package 200 may be improved.

Meanwhile, at least one of the plurality of lead frames 190 may be exposed to the outer surface of the body 130, which will be described with reference to FIG. 4.

4 is a view showing the inside of the semiconductor device package 200 according to an embodiment of the present invention.

Referring to FIG. 4 , it can be seen that at least one of the plurality of lead frames 190 is exposed to the outer surface of the body 130 .

In order for at least one of the plurality of lead frames 190 to be exposed to the outer surface of the body 130, at least one of the plurality of lead frames 190 has the same horizontal length B as the length B of the body 130 in the horizontal direction. It may have a direction length (A).

The lead frame 190 may be implemented with a metal for current and heat transfer, for example, titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum It may include at least one of (Ta), platinum (Pt), tin (Sn), silver (Ag), and phosphorus (P). In addition, the lead frame 190 may be configured to have a single-layer or multi-layer structure, but is not necessarily limited thereto.

The semiconductor device package 200 according to an exemplary embodiment may further include a protection device 120 .

By disposing the protection element 120, the semiconductor element 110 can be protected from high voltage. The protection element 120 may be, for example, a controlled diode or a transient voltage suppressor (TVS), but is not necessarily limited thereto.

The protection element 120 may be disposed on the plurality of lead frames 190 within the body 130 and may be electrically connected to the lead frame 190 .

Meanwhile, although the area of the lead frame 190 where the protection element 120 is disposed and the area of the lead frame 190 where the semiconductor element 110 is disposed are shown to be different from each other, they may be disposed while sharing the same lead frame 190. may be

In the semiconductor device package 200 according to an embodiment of the present invention described with reference to FIGS. 2 to 4 , a first bonding portion 117 and a second bonding portion 118 included in the semiconductor device 110 are disposed. It may further include a substrate (not shown) to be.

However, since the substrate (not shown) is not an essential component, if the substrate (not shown) is not included in the semiconductor device package 200 according to an embodiment of the present invention, the vertical direction of the entire semiconductor device package 200 It can be miniaturized by reducing the length. In addition, since the semiconductor device package 200 is not disposed on a substrate (not shown), heat generated from the semiconductor device 110 is quickly released, and thus thermal resistance can be reduced, and manufacturing costs can be reduced, thereby increasing process yield. can be improved

Hereinafter, a method of manufacturing a semiconductor device package 200 according to an exemplary embodiment of the present invention will be described with reference to FIG. 5 .

5 is a diagram for explaining a method of manufacturing a semiconductor device package 200 according to an exemplary embodiment.

In describing the manufacturing method of the semiconductor device package 200 according to an embodiment of the present invention, detailed descriptions of components identical to those described with reference to FIGS. 1 to 4 will be omitted to prevent redundant description.

Referring to FIG. 5(a) , it can be confirmed that the semiconductor element 110 and the protection element 120 are attached to a plurality of lead frames 190 disposed at a predetermined distance from each other.

The lead frame 190 may be attached to the semiconductor element 110 and the protection element 120 through an adhesive, where the adhesive may be implemented with a conductive material. For example, the adhesive may be a solder paste as a conductive material.

In addition, the plurality of lead frames 190 may be electrically connected to the semiconductor device 110 and the protection device 120 by wire bonding, flip bonding, die bonding, or the like, but are not necessarily limited thereto.

Referring to FIG. 5 (b), which is a step after attaching the semiconductor device 110 and the protection device 120 on the plurality of lead frames 190, the semiconductor device 110 and the semiconductor device 110 on the plurality of lead frames 190 When the protection element 120 is attached, it can be confirmed that the wavelength conversion layer 150 is disposed on the upper surface of the semiconductor element 110 through the resin part 170, and the wavelength conversion layer 150 is placed on the semiconductor element 110. ) Place the resin part 170 on the side of the semiconductor element 110 before attaching it to the upper surface.

More specifically, the resin part 170 may be injected into the semiconductor element 110 through a dispenser, and the resin part 170 is transparent to reduce loss of light emitted from the semiconductor element 110. It may be implemented with silicone resin, epoxy, etc., but is not necessarily limited thereto.

Meanwhile, the resin part 170 disposed on the semiconductor element 110 is attached to the upper surface of the semiconductor element 110 while the wavelength conversion layer 150 is attached to the side surface of the semiconductor element 110 due to the weight of the wavelength conversion layer 150. , and the resin portion 170 that has not been completely moved may remain between the upper surface of the semiconductor element 110 and the lower surface of the wavelength conversion layer 150 .

The wavelength conversion layer 150 is composed of a film or glass containing a wavelength conversion material and is attached to the upper surface of the semiconductor element 110, or is coated with a polymer resin containing a wavelength conversion material by spraying, so that the upper surface of the semiconductor element 110 A wavelength conversion layer 150 may be disposed.

Here, the wavelength conversion material may be a phosphor and may include one or more of a sulfide-based, oxide-based, or nitride-based compound, but is not necessarily limited thereto.

Meanwhile, the polymer resin may include one or more of a transparent epoxy resin, a silicone resin, a polyimide resin, a urea resin, and an acrylic resin, but is not necessarily limited thereto.

The type of phosphor may be determined according to the wavelength of light emitted from the semiconductor device 110 . For example, when the semiconductor device 110 emits light in an ultraviolet wavelength band, green phosphors, blue phosphors, and red phosphors may be selected as phosphors. When the semiconductor device 110 emits light in a blue wavelength range, a yellow phosphor, a combination of a red phosphor and a green phosphor, or a combination of a yellow phosphor, a red phosphor, and a green phosphor may be selected as the phosphor.

Referring to FIG. 5(c), which is a step after attaching the wavelength conversion layer 150 to the upper surface of the semiconductor element 110 through the resin part 170, the semiconductor element 110 and the wavelength conversion layer 150 are four It can be seen that the body 130 is disposed between the side and the plurality of lead frames 190 .

Here, the body 130 includes a first body 130-1 disposed between the plurality of lead frames 190 and a second body disposed surrounding four side surfaces of the semiconductor element 110 and the wavelength conversion layer 150 ( 130-2), and printing may be performed to form the first body 130-1 and the second body 130-2 at once.

Meanwhile, a material constituting the body 130 may be any one of an organic material and an inorganic material.

When the body 130 is made of an organic material, it may be implemented with a resin containing a reflective material. For example, the resin may include an epoxy molding compound (EMC), a silicone resin, a silicone molding compound (SMC), It may be at least one of a polyimide resin, a urea resin, and an acrylic resin, and the reflective material may be TiO ₂ or SiO ₂ , but is not necessarily limited thereto. For example, the body 130 may be implemented with a material including TiO2 and silicone resin.

When the body 130 is made of an inorganic material, it may be made of ceramic. By being implemented with ceramic, the semiconductor device package 200 according to an embodiment of the present invention may have improved durability and heat resistance. For example, the body 130 may include TiO, Bn, or ZnO.

In addition, when the body 130 is made of an inorganic material, a heat spreader may be further included. These heat spreaders can be defined as powder particles, grains, fillers, and additives of a predetermined size, and examples include oxides, nitrides, fluorides, It may include at least one material of sulfides, but is not necessarily limited thereto.

Referring to FIG. 5(d), which is a step after the body 130 is disposed between the four side surfaces of the semiconductor device 110 and the wavelength conversion layer 150 and the plurality of lead frames 190, the body 130 It can be seen that leveling is performed so that one surface and one surface of the wavelength conversion layer 150 are disposed on the same plane.

However, in the previous step, even when the body 130 is disposed on the same plane as one surface of the wavelength conversion layer 150, the leveling step shown in FIG. 5(d) may be omitted.

Referring to FIG. 5(e), which is a step after leveling is performed on one surface of the body 130 and one surface of the wavelength conversion layer 150, the plurality of semiconductor device packages 200 are diced. ) to complete the semiconductor device package 200 according to the present invention.

The semiconductor device package 200 completed by this manufacturing method surrounds the first body 130-1 disposed between the lead frame 190, the semiconductor device 110, and the four sides of the wavelength conversion layer 150. Since the second body 130-2 is made of the same material, the process of the semiconductor device package 200 is simplified, and the manufacturing time and yield of the process can be improved.

In addition, since the semiconductor device package 200 according to an embodiment of the present invention does not undergo deformation due to heat and light energy, the quality of the semiconductor device package 200 may be improved.

Meanwhile, a plurality of semiconductor device packages according to an embodiment of the present invention described above may be arrayed on a substrate, and optical members such as a light guide plate, a prism sheet, a diffusion sheet, and the like may be disposed on a light path of the semiconductor device package. can

In addition, it may be implemented as a light source device including a semiconductor device package according to an embodiment of the present invention.

The light source device includes a light source module including a substrate and a semiconductor device package according to an embodiment of the present invention, a radiator for dissipating heat from the light source module, and a power source that processes or converts electrical signals received from the outside and provides the light source module with the light source module. It may include a provisioning unit. For example, the light source device may include a lamp, a head lamp, or a street light. In addition, the light source device according to the embodiment may be variously applied to products requiring output light.

In addition, the light source device includes a bottom cover, a reflector disposed on the bottom cover, a light emitting module including a semiconductor element emitting light, a light guide plate disposed in front of the reflector and guiding light emitted from the light emitting module forward, An optical sheet including prism sheets disposed in front of the light guide plate, a display panel disposed in front of the optical sheet, an image signal output circuit connected to the display panel and supplying image signals to the display panel, disposed in front of the display panel A color filter may be included. Here, the bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit.

As another example of a light source device, a headlamp includes a light emitting module including a semiconductor device package disposed on a substrate, a reflector for reflecting light emitted from the light emitting module in a predetermined direction, for example, forward, and a reflector for reflecting light emitted from the light emitting module. It may include a lens that refracts light forward, and a shade that blocks or reflects a part of the light reflected by the reflector and directed to the lens to achieve a light distribution pattern desired by a designer.

Although the present invention has been described as above, those skilled in the art to which the present invention pertains will recognize that it can be implemented in other forms while maintaining the technical spirit and essential characteristics of the present invention.

The scope of the present invention will be defined by the claims, but all changes or modifications derived from configurations directly derived from the claims, as well as configurations equivalent thereto, are also included in the scope of the present invention. should be interpreted as

110: semiconductor element
130: body
150: wavelength conversion layer
170: resin part
190: lead frame
120: protection element

Claims (10)

a body containing a cavity;
a plurality of lead frames buried and disposed in the body;
disposed within the cavity;
A semiconductor structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and a light-transmitting substrate disposed on the semiconductor structure a semiconductor device;
a wavelength conversion layer disposed on the semiconductor device; and
a resin part disposed between the side surface of the semiconductor element and the lower surface of the wavelength conversion layer; including,
the body,
A first body disposed between the plurality of lead frames and
A second body disposed surrounding the semiconductor element, four side surfaces of the wavelength conversion layer, and outer surfaces of the plurality of lead frames;
The resin part,
The second body and the wavelength conversion layer are overlapped in a direction perpendicular to the light-transmitting substrate,
The thickness of the plurality of lead frames is 0.1 mm or more and 0.3 mm or less,
Semiconductor device package. According to claim 1,
The plurality of lead frames,
Arranged with a separation distance in the first direction,
the separation distance,
150um or more to 250um or less,
Semiconductor device package. delete delete delete delete delete According to claim 1,
When the body is made of an organic material including a silicone resin, the body further comprises TiO ₂ , semiconductor device package. delete According to claim 1,
One side of the wavelength conversion layer,
Disposed on the same plane as one surface of the body,
Semiconductor device package.

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