KR102409486B1 - 마이크로 엘이디 제조 장치 - Google Patents
마이크로 엘이디 제조 장치 Download PDFInfo
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- KR102409486B1 KR102409486B1 KR1020200048210A KR20200048210A KR102409486B1 KR 102409486 B1 KR102409486 B1 KR 102409486B1 KR 1020200048210 A KR1020200048210 A KR 1020200048210A KR 20200048210 A KR20200048210 A KR 20200048210A KR 102409486 B1 KR102409486 B1 KR 102409486B1
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Abstract
Description
도 2는 웨이퍼를 나타내는 개략 정면도이다.
도 3은 마이크로 엘이디칩이 전사되는 과정을 나타내는 제1개념도이다.
도 4는 마이크로 엘이디칩이 전사되는 과정을 나타내는 제2개념도이다.
도 5는 본 발명인 마이크로 엘이디 제조 장치의 일부를 나타내는 개략 사시도이다.
도 6은 도 5에서 상부 기대를 생략한 상태를 나타내는 개략 사시도이다.
도 7는 도 6에서 하부 기대에 기판 스테이지 하판이 형성된 상태를 나타내는 개략 사시도이다.
도 8은 도 7의 기판 스테이지 하판 위로 기판 스테이지 중판과 기판 스테이지 상판이 형성된 상태를 나타내는 개략 사시도이다.
도 9의 (a)는 제1승하강부에 의해 기판 스테이지 상판이 승하강하는 경우를 나타내는 개략 사시도이고, 도 9의 (b)는 제1승하강부에 의해 기판 스테이지 상판이 기울어지는 경우를 나타내는 개략 사시도이다.
도 10은 도 8의 기판 스테이지 상판 위로 웨이퍼 스테이지 하판이 형성된 상태를 나타내는 개략 사시도이다.
도 11은 도 10의 웨이퍼 스테이지 하판 위로 웨이퍼 스테이지 상판이 형성된 상태를 나타내는 개략 사시도이다.
도 12는 상기 웨이퍼 스테이지 상판 A-A' 부분의 개략 단면도이다.
도 13은 도 11의 변형례를 나타내는 개략 일부 사시도이다.
도 14는 도 13의 제3-1웨이퍼 중앙 구멍 주위 측면 개략도이다.
108-1: 제1오목홈 120: 레이저 광원부
122: 레이저 광원 124: 경통부
126: 마스크부 128: 스캐너부
140: 웨이퍼부 152: 웨이퍼
154: 마이크로 엘이디칩 160: 글라스 기판부
211-1: 제1리니어 모터부 231: 제1가이드 부재
310: 제1플렉시블 전선 케이블 덕트 530, 540, 550: 제1승하강부
Claims (7)
- 레이저를 조사하여 웨이퍼의 마이크로 엘이디칩을 글라스 기판에 전사하는 마이크로 엘이디 제조 장치에 있어서,
상기 웨이퍼가 위치되는 웨이퍼 스테이지와,
상기 글라스 기판이 위치되는 기판 스테이지와,
상기 기판 스테이지 하부에 형성되는 하부 기대와,
상기 웨이퍼 스테이지가 이동되도록 기판 스테이지에 형성되는 제1구동부재, 및
상기 기판 스테이지가 이동되도록 하부 기대에 형성되는 제2구동부재를 포함하고,
상기 기판 스테이지의 상부에 웨이퍼 스테이지가 이동되는 구조가 형성되어 하부 기대를 기준으로 기판 스테이지와 웨이퍼 스테이지가 일체로 동시에 이동될 수 있으며,
상기 기판 스테이지에는 상기 제2구동부재에 의해 제3방향으로 이동되는 기판 스테이지 하판이 형성되고,
상기 하부 기대 상면에는 "ㄷ"자 형태의 단면으로 형성된 제1가이드 부재와 제2가이드 부재가 서로 대향되게 형성되며,
상기 기판 스테이지 하판의 일측단은 상기 제1가이드 부재에 인입되고, 기판 스테이지 하판의 타측단은 상기 제2가이드 부재에 인입되고, 상기 하부 기대에는 제2구동부재의 일측에 가이드 철선이 형성되며, 상기 기판 스테이지 하판에는 상기 가이드 철선을 감싸는 링이 형성되며,
기판 스테이지 상판에는 웨이퍼 스테이지 하판에 초음파를 발사하여 웨이퍼 스테이지 하판이 수평인지를 판단하는 제1수평감지센서와 제2수평감지센서가 형성되며,
상기 기판 스테이지 상판에는 이물질을 감지하기 위해서, 상기 글라스 기판의 일측에 형성되는 광발생부와, 상기 글라스 기판의 타측에 광발생부에서 조사되는 광을 수광하는 수광부가 형성되고,
상기 웨이퍼 스테이지는,
상기 제1구동부재에 의해 제1방향으로 이동되는 웨이퍼 스테이지 하판과, 상기 웨이퍼 스테이지 하판에 형성되는 제3구동부재에 의해 상기 제1방향과 상이한 제2방향으로 이동되는 웨이퍼 스테이지 상판과, 상기 웨이퍼 스테이지 상판에 형성된 중앙 구멍 둘레 하부에 형성되는 웨이퍼 흡착부를 포함하며,
상기 웨이퍼 흡착부에는 웨이퍼 흡착부와 글라스 기판 사이의 간격이 균일한지 측정하기 위한 제1거리측정센서와 제2거리측정센서가 형성되는 것을 특징으로 하는 마이크로 엘이디 제조 장치.
- 삭제
- 청구항 1에 있어서,
상기 기판 스테이지는
상기 기판 스테이지 하판에 형성되는 제4구동부재에 의해 상기 제3방향과 상이한 제4방향으로 이동되는 기판 스테이지 중판과,
상기 기판 스테이지 중판의 상부에서 승하강되도록 형성되는 상기 기판 스테이지 상판을 더 포함하는 것을 특징으로 하는 마이크로 엘이디 제조 장치.
- 청구항 3에 있어서,
상기 기판 스테이지 중판과 기판 스테이지 상판 사이에는 3지점에 제1승하강부가 형성되는 것을 특징으로 하는 마이크로 엘이디 제조 장치.
- 청구항 4에 있어서,
상기 기판 스테이지 하판에는 기판 스테이지 하판이 이동되는 속도를 파악하는 제1속도 센서가 형성되고,
상기 하부 기대에는 제1속도 센서와 대향되는 위치에 제1감지부재가 형성되는 것을 특징으로 하는 마이크로 엘이디 제조 장치.
- 삭제
- 삭제
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KR1020200048210A KR102409486B1 (ko) | 2020-04-21 | 2020-04-21 | 마이크로 엘이디 제조 장치 |
PCT/KR2021/002279 WO2021215640A1 (ko) | 2020-04-21 | 2021-02-24 | 마이크로 엘이디 제조 장치 |
US17/918,191 US12154816B2 (en) | 2020-04-21 | 2021-02-24 | Micro-LED manufacturing device |
CN202180030333.7A CN115443527B (zh) | 2020-04-21 | 2021-02-24 | 微型发光二极管制造装置 |
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JP3890136B2 (ja) * | 1997-03-25 | 2007-03-07 | キヤノン株式会社 | 露光装置とこれを用いたデバイス製造方法、ならびにステージ装置 |
JP2006237488A (ja) * | 2005-02-28 | 2006-09-07 | Nikon Corp | ステージ装置、露光装置及び方法、並びにデバイス製造方法 |
JP5004454B2 (ja) * | 2005-10-13 | 2012-08-22 | 株式会社東京精密 | プローバ及びプローバにおける回転・移動制御方法 |
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JP5026455B2 (ja) * | 2009-03-18 | 2012-09-12 | 住友重機械工業株式会社 | Xyステージ装置、半導体検査装置、及び半導体露光装置 |
KR101160158B1 (ko) | 2010-05-28 | 2012-06-27 | 주식회사 엘티에스 | 레이저 리프트 오프 공정의 기판 분리장치 |
KR101261266B1 (ko) * | 2010-11-03 | 2013-05-09 | 유병소 | 레이저 가공 장치 및 이를 이용한 레이저 가공 방법 |
US9391042B2 (en) | 2012-12-14 | 2016-07-12 | Apple Inc. | Micro device transfer system with pivot mount |
KR20150092600A (ko) * | 2014-02-05 | 2015-08-13 | 에이피시스템 주식회사 | 레이저 처리 장치 및 레이저 처리 방법 |
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JP6735693B2 (ja) * | 2017-02-27 | 2020-08-05 | 株式会社日立ハイテク | ステージ装置、及び荷電粒子線装置 |
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CN115443527B (zh) | 2025-07-18 |
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CN115443527A (zh) | 2022-12-06 |
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