KR102389815B1 - 양자점 유리셀 및 이를 포함하는 발광소자 패키지 - Google Patents
양자점 유리셀 및 이를 포함하는 발광소자 패키지 Download PDFInfo
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- KR102389815B1 KR102389815B1 KR1020170069770A KR20170069770A KR102389815B1 KR 102389815 B1 KR102389815 B1 KR 102389815B1 KR 1020170069770 A KR1020170069770 A KR 1020170069770A KR 20170069770 A KR20170069770 A KR 20170069770A KR 102389815 B1 KR102389815 B1 KR 102389815B1
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- South Korea
- Prior art keywords
- quantum dot
- glass
- light emitting
- emitting device
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
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- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- VSAISIQCTGDGPU-UHFFFAOYSA-N tetraphosphorus hexaoxide Chemical compound O1P(O2)OP3OP1OP2O3 VSAISIQCTGDGPU-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- H01L33/56—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B23/00—Re-forming shaped glass
- C03B23/20—Uniting glass pieces by fusing without substantial reshaping
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
- C03C27/06—Joining glass to glass by processes other than fusing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
- C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
-
- H01L33/04—
-
- H01L33/50—
-
- H01L33/60—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
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Abstract
Description
도 2a는 본 발명의 기술적 사상의 일 실시예에 따른 양자점 유리셀에 포함되는 양자점 분말의 전자현미경 이미지이다.
도 2b는 무기 균일화 입자를 포함하지 않는 양자점 분말의 전자현미경 이미지이다.
도 3 및 도 4는 본 발명의 기술적 사상의 일 실시예에 따른 양자점 유리셀에 포함되는 유리 밀봉 구조를 개략적으로 나타낸 개념도들이다.
도 5는 본 발명의 기술적 사상의 일 실시예에 따른 양자점 유리셀을 개략적으로 나타낸 단면도이다.
도 6a는 본 발명의 기술적 사상의 일 실시예에 따른 양자점 유리셀에 포함되는 유리층의 흡수 스펙트럼이다.
도 6b는 본 발명의 기술적 사상의 일 실시예에 따른 양자점 유리셀을 포함하는 발광소자 패키지의 발광 스펙트럼이다.
도 7은 본 발명의 기술적 사상의 일 실시예에 따른 양자점 유리셀 제조 방법을 개략적으로 나타낸 단면도들이다.
도 8은 본 발명의 기술적 사상의 일 실시예에 따른 양자점 유리셀 제조 방법을 개략적으로 나타낸 단면도들이다.
도 9는 본 발명의 기술적 사상의 일 실시예에 따른 양자점 유리셀 제조 방법을 개략적으로 나타낸 단면도들이다.
도 10은 본 발명의 기술적 사상의 일 실시예에 따른 양자점 유리셀을 포함하는 발광소자 패키지의 구조를 개략적으로 나타낸 단면도이다.
도 11은 본 발명의 기술적 사상의 일 실시예에 따른 양자점 유리셀을 포함하는 발광소자 패키지의 제조 방법을 개략적으로 나타낸 단면도들이다.
도 12는 본 발명의 기술적 사상의 일 실시예에 따른 발광소자 패키지를 포함하는 백라이트 유닛의 개략적인 사시도이다.
도 13은 본 발명의 기술적 사상의 일 실시예에 따른 발광소자 패키지를 포함하는 직하형 백라이트 유닛의 개략적인 단면도이다.
도 14는 본 발명의 기술적 사상의 일 실시예에 따른 발광소자 패키지를 포함하는 디스플레이 장치의 개략적인 사시도이다.
도 15는 본 발명의 기술적 사상의 일 실시예에 따른 발광소자 패키지를 포함하는 조명 장치로서 벌브형 램프를 간략하게 나타내는 사시도이다.
Claims (20)
- 양자점, 무기 균일화 입자 및 바인더가 혼합되어 있는 양자점 분말;
상기 양자점 분말이 분산된 분산 매트릭스; 및
상기 분산 매트릭스를 둘러싸는 유리 밀봉 구조;를 포함하고,
상기 양자점 분말의 직경은 1μm 내지 50μm인 것을 특징으로 하는 양자점 유리셀. - 제1 항에 있어서,
상기 무기 균일화 입자는 실리카(SiO2), 티타니아(TiO2), 알루미나(Al2O3) 중 적어도 하나를 포함하는 것을 특징으로 하는 양자점 유리셀. - 제1 항에 있어서,
상기 분산 매트릭스는 실리콘(silicone) 수지를 포함하는 것을 특징으로 하는 양자점 유리셀. - 제1 항에 있어서,
상기 양자점 분말은 유기 용매에 분산된 양자점을 준비하는 단계;
상기 유기 용매로부터 상기 양자점을 분리하는 단계; 및
상기 분리된 양자점, 무기 균일화 입자, 및 바인더를 혼합하여 분말을 형성하는 단계;를 포함하는 방법에 의하여 제조된 것을 특징으로 하는 양자점 유리셀. - 제1 항에 있어서,
상기 유리 밀봉 구조는 유리 용기와 유리 덮개가 레이저 가열에 의하여 용접된 것을 특징으로 하는 양자점 유리셀. - 제5 항에 있어서,
상기 유리 용기는 상기 분산 매트릭스가 형성되는 개구부 및 상기 유리 덮개와 밀착되는 접합부를 포함하는 것을 특징으로 하는 양자점 유리셀. - 제6 항에 있어서,
상기 접합부 상에 상기 레이저의 초점이 지나가는 용접선을 중심으로, 상기 유리 용기 및 상기 유리덮개의 일부가 용융되어 형성된 유리 용접 영역을 포함하는 것을 특징으로 하는 양자점 유리셀. - 제6 항에 있어서,
상기 유리 덮개와 상기 유리 용기 사이에 유리 프릿(glass frit)을 레이저로 가열하여 형성된 유리층을 포함하는 것을 특징으로 하는 양자점 유리셀. - 제8 항에 있어서,
상기 유리층은 550nm 내지 600nm 파장의 빛을 흡수하는 것을 특징으로 하는 양자점 유리셀. - 기판;
상기 기판 상에 위치하고, 공동을 포함하는 하우징;
상기 기판 상에 위치하며, 상기 하우징의 공동 내에 위치하는 발광소자;
상기 발광소자를 덮는 발광소자 봉지부; 및
상기 발광소자 봉지부 상에 위치하는 양자점 유리셀;을 포함하고,
상기 양자점 유리셀은 양자점, 무기 균일화 입자 및 바인더가 혼합되어 있는 양자점 분말;
상기 양자점 분말이 분산된 분산 매트릭스; 및
상기 분산 매트릭스를 둘러싸는 유리 밀봉 구조;를 포함하고,
상기 양자점 분말의 직경은 1μm 내지 50μm인 것을 특징으로 하는 발광소자 패키지. - 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
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Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110506182A (zh) * | 2017-04-12 | 2019-11-26 | 昕诺飞控股有限公司 | 照明设备、照明器及制造方法 |
TWI797259B (zh) | 2018-02-20 | 2023-04-01 | 晶元光電股份有限公司 | 一種發光單元及其發光裝置 |
TWI654277B (zh) * | 2018-03-23 | 2019-03-21 | 國立清華大學 | 高效率光轉換材料 |
KR102592483B1 (ko) * | 2018-10-10 | 2023-10-25 | 주식회사 루멘스 | 퀀텀닷 플레이트 조립체의 제조방법 |
KR102555203B1 (ko) * | 2018-08-16 | 2023-07-14 | 주식회사 루멘스 | 퀀텀닷 플레이트 조립체의 제조방법 |
CN109545945B (zh) * | 2018-11-28 | 2021-03-23 | 上海应用技术大学 | 一种白光led用夹层荧光玻璃的制备方法 |
DE102018132542A1 (de) * | 2018-12-17 | 2020-06-18 | Osram Opto Semiconductors Gmbh | Optoelektronische leuchtvorrichtung und herstellungsverfahren |
KR102138074B1 (ko) * | 2019-01-03 | 2020-07-27 | 아주대학교산학협력단 | 발광 나노결정-금속산화물 복합체 박막의 제조 방법, 이에 의해 제조된 광학 필름 및 이를 구비하는 백라이트 유닛 |
CN110518097B (zh) * | 2019-07-22 | 2020-12-04 | 湖北大学 | 一种激光烧结玻璃封装荧光粉的方法 |
CN112635640A (zh) * | 2020-12-14 | 2021-04-09 | 深圳信息职业技术学院 | 量子点发光器件及其制备方法与应用 |
CN112852158B (zh) * | 2021-01-04 | 2022-09-30 | 福建师范大学 | 一种钙钛矿量子点玻璃膜及其制备方法和应用 |
CN112863328A (zh) * | 2021-03-05 | 2021-05-28 | 常州亚玛顿股份有限公司 | 一种扩散板、背光模组及扩散板的制备方法 |
KR20220131096A (ko) | 2021-03-19 | 2022-09-27 | 코웨이 주식회사 | 공기청정기 |
JPWO2023085010A1 (ko) * | 2021-11-12 | 2023-05-19 | ||
CN114573857B (zh) * | 2022-03-11 | 2023-08-01 | 纳晶科技股份有限公司 | 量子点层状体及其制备方法 |
TWI870301B (zh) * | 2022-05-20 | 2025-01-11 | 穎台科技股份有限公司 | 多層光擴散板 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100787463B1 (ko) * | 2007-01-05 | 2007-12-26 | 삼성에스디아이 주식회사 | 글래스 프릿, 실링재 형성용 조성물, 발광 장치 및 발광 장치의 제조방법 |
US20120200219A1 (en) * | 2009-10-21 | 2012-08-09 | Jin Won Song | Display device using quantum-dot and fabrication method thereof |
US20140022779A1 (en) * | 2011-04-01 | 2014-01-23 | Kai Su | White light emitting device |
US20150285985A1 (en) * | 2014-04-02 | 2015-10-08 | Samsung Display Co., Ltd. | Light source unit, method of fabricating the light source unit and backlight assembly including the light source unit |
Family Cites Families (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6372608B1 (en) | 1996-08-27 | 2002-04-16 | Seiko Epson Corporation | Separating method, method for transferring thin film device, thin film device, thin film integrated circuit device, and liquid crystal display device manufactured by using the transferring method |
USRE38466E1 (en) | 1996-11-12 | 2004-03-16 | Seiko Epson Corporation | Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device |
US7208725B2 (en) | 1998-11-25 | 2007-04-24 | Rohm And Haas Electronic Materials Llc | Optoelectronic component with encapsulant |
JP3906654B2 (ja) | 2000-07-18 | 2007-04-18 | ソニー株式会社 | 半導体発光素子及び半導体発光装置 |
KR20040029301A (ko) | 2001-08-22 | 2004-04-06 | 소니 가부시끼 가이샤 | 질화물 반도체소자 및 질화물 반도체소자의 제조방법 |
JP2003218034A (ja) | 2002-01-17 | 2003-07-31 | Sony Corp | 選択成長方法、半導体発光素子及びその製造方法 |
JP3815335B2 (ja) | 2002-01-18 | 2006-08-30 | ソニー株式会社 | 半導体発光素子及びその製造方法 |
KR100499129B1 (ko) | 2002-09-02 | 2005-07-04 | 삼성전기주식회사 | 발광 다이오드 및 그 제조방법 |
US7002182B2 (en) | 2002-09-06 | 2006-02-21 | Sony Corporation | Semiconductor light emitting device integral type semiconductor light emitting unit image display unit and illuminating unit |
CN100511732C (zh) * | 2003-06-18 | 2009-07-08 | 丰田合成株式会社 | 发光器件 |
JP2005093712A (ja) * | 2003-09-17 | 2005-04-07 | Stanley Electric Co Ltd | 半導体発光装置 |
KR100714639B1 (ko) | 2003-10-21 | 2007-05-07 | 삼성전기주식회사 | 발광 소자 |
KR100506740B1 (ko) | 2003-12-23 | 2005-08-08 | 삼성전기주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
KR100664985B1 (ko) | 2004-10-26 | 2007-01-09 | 삼성전기주식회사 | 질화물계 반도체 소자 |
KR100665222B1 (ko) | 2005-07-26 | 2007-01-09 | 삼성전기주식회사 | 확산재료를 이용한 엘이디 패키지 및 그 제조 방법 |
KR100661614B1 (ko) | 2005-10-07 | 2006-12-26 | 삼성전기주식회사 | 질화물계 반도체 발광소자 및 그 제조방법 |
KR100723247B1 (ko) | 2006-01-10 | 2007-05-29 | 삼성전기주식회사 | 칩코팅형 led 패키지 및 그 제조방법 |
KR100735325B1 (ko) | 2006-04-17 | 2007-07-04 | 삼성전기주식회사 | 발광다이오드 패키지 및 그 제조방법 |
TWM312019U (en) * | 2006-11-09 | 2007-05-11 | Yuan Lin | White light emitting diode device |
KR100930171B1 (ko) | 2006-12-05 | 2009-12-07 | 삼성전기주식회사 | 백색 발광장치 및 이를 이용한 백색 광원 모듈 |
US20080149166A1 (en) * | 2006-12-21 | 2008-06-26 | Goldeneye, Inc. | Compact light conversion device and light source with high thermal conductivity wavelength conversion material |
KR100855065B1 (ko) | 2007-04-24 | 2008-08-29 | 삼성전기주식회사 | 발광 다이오드 패키지 |
KR100982980B1 (ko) | 2007-05-15 | 2010-09-17 | 삼성엘이디 주식회사 | 면 광원 장치 및 이를 구비하는 lcd 백라이트 유닛 |
KR101164026B1 (ko) | 2007-07-12 | 2012-07-18 | 삼성전자주식회사 | 질화물계 반도체 발광소자 및 그 제조방법 |
KR100891761B1 (ko) | 2007-10-19 | 2009-04-07 | 삼성전기주식회사 | 반도체 발광소자, 그의 제조방법 및 이를 이용한 반도체발광소자 패키지 |
KR101332794B1 (ko) | 2008-08-05 | 2013-11-25 | 삼성전자주식회사 | 발광 장치, 이를 포함하는 발광 시스템, 상기 발광 장치 및발광 시스템의 제조 방법 |
KR20100030470A (ko) | 2008-09-10 | 2010-03-18 | 삼성전자주식회사 | 다양한 색 온도의 백색광을 제공할 수 있는 발광 장치 및 발광 시스템 |
KR101530876B1 (ko) | 2008-09-16 | 2015-06-23 | 삼성전자 주식회사 | 발광량이 증가된 발광 소자, 이를 포함하는 발광 장치, 상기 발광 소자 및 발광 장치의 제조 방법 |
US8008683B2 (en) | 2008-10-22 | 2011-08-30 | Samsung Led Co., Ltd. | Semiconductor light emitting device |
KR101577300B1 (ko) * | 2008-10-28 | 2015-12-15 | 삼성디스플레이 주식회사 | 양자점을 이용한 백색광 발광다이오드 구조 및 이를 포함하는 백라이트 어셈블리 |
US7828453B2 (en) * | 2009-03-10 | 2010-11-09 | Nepes Led Corporation | Light emitting device and lamp-cover structure containing luminescent material |
US20110303940A1 (en) * | 2010-06-14 | 2011-12-15 | Hyo Jin Lee | Light emitting device package using quantum dot, illumination apparatus and display apparatus |
KR20110136676A (ko) | 2010-06-14 | 2011-12-21 | 삼성엘이디 주식회사 | 양자점을 이용한 발광소자 패키지, 조광 장치 및 디스플레이 장치 |
KR101156096B1 (ko) * | 2010-07-20 | 2012-06-20 | 엘지이노텍 주식회사 | 양자점 시트를 이용한 백라이트 유닛 및 그 제조방법 |
KR20120050286A (ko) | 2010-11-10 | 2012-05-18 | 삼성엘이디 주식회사 | 양자점을 이용한 발광 소자 패키지 |
WO2012132232A1 (ja) * | 2011-03-31 | 2012-10-04 | パナソニック株式会社 | 半導体発光装置 |
KR101326938B1 (ko) | 2011-04-13 | 2013-11-11 | 엘지이노텍 주식회사 | 광학 부재 및 이를 포함하는 표시장치 |
KR20120135999A (ko) * | 2011-06-08 | 2012-12-18 | 삼성전자주식회사 | 발광소자 패키지 |
KR101949385B1 (ko) | 2011-11-17 | 2019-02-18 | 엘지디스플레이 주식회사 | 퀀텀 로드를 구비한 발광 다이오드 패키지 및 이를 구비한 액정표시장치 |
KR20130136259A (ko) | 2012-06-04 | 2013-12-12 | 삼성전자주식회사 | 양자점을 이용한 발광소자 패키지 |
CN104736662B (zh) * | 2012-08-06 | 2017-07-18 | 皇家飞利浦有限公司 | 用于固态照明的高度稳定qd‑复合物和通过无引发剂的聚合制作所述qd‑复合物的方法 |
KR101478124B1 (ko) | 2012-12-12 | 2015-01-02 | 경북대학교 산학협력단 | 엘이디 패키지 및 엘이디 패키지 제조 방법 |
KR102223504B1 (ko) * | 2013-09-25 | 2021-03-04 | 삼성전자주식회사 | 양자점-수지 나노복합체 및 그 제조 방법 |
CN105900251A (zh) | 2013-11-13 | 2016-08-24 | 纳米技术有限公司 | 包含量子点荧光体的led盖 |
CN103681990B (zh) * | 2013-12-11 | 2017-09-01 | 深圳市华星光电技术有限公司 | Led封装件及其制作方法 |
US9780256B2 (en) | 2013-12-12 | 2017-10-03 | Nanophotonica | Method and structure of promoting positive efficiency aging and stabilization of quantum dot light-emitting diode |
JP2015144261A (ja) * | 2013-12-26 | 2015-08-06 | インテマティックス・コーポレーションIntematix Corporation | フォトルミネセンス波長変換を用いる固体発光デバイス |
KR101568707B1 (ko) | 2014-01-16 | 2015-11-12 | 전남대학교산학협력단 | 양자점 포함 실리카입자가 포함된 발광고분자필름을 포함하는 백색 led 소자 및 그 제조방법 |
KR102355119B1 (ko) * | 2014-03-18 | 2022-01-26 | 주식회사 쿠라레 | 전자 디바이스 |
KR102273653B1 (ko) | 2014-08-29 | 2021-07-06 | 서울반도체 주식회사 | 발광 다이오드 패키지 |
JP2016076634A (ja) | 2014-10-08 | 2016-05-12 | エルジー ディスプレイ カンパニー リミテッド | Ledパッケージ、バックライトユニット及び液晶表示装置 |
KR20160130540A (ko) | 2015-05-04 | 2016-11-14 | 주식회사 두하누리 | 양자점-비흡광성매질 복합체의 제조방법 및 이에 의해 제조되는 양자점-고분자 복합체 |
-
2017
- 2017-06-05 KR KR1020170069770A patent/KR102389815B1/ko active Active
- 2017-11-21 US US15/819,025 patent/US10680144B2/en active Active
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100787463B1 (ko) * | 2007-01-05 | 2007-12-26 | 삼성에스디아이 주식회사 | 글래스 프릿, 실링재 형성용 조성물, 발광 장치 및 발광 장치의 제조방법 |
US20120200219A1 (en) * | 2009-10-21 | 2012-08-09 | Jin Won Song | Display device using quantum-dot and fabrication method thereof |
US20140022779A1 (en) * | 2011-04-01 | 2014-01-23 | Kai Su | White light emitting device |
US20150285985A1 (en) * | 2014-04-02 | 2015-10-08 | Samsung Display Co., Ltd. | Light source unit, method of fabricating the light source unit and backlight assembly including the light source unit |
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US20180351052A1 (en) | 2018-12-06 |
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US10680144B2 (en) | 2020-06-09 |
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