KR102345313B1 - 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 - Google Patents
반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 Download PDFInfo
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- KR102345313B1 KR102345313B1 KR1020200094175A KR20200094175A KR102345313B1 KR 102345313 B1 KR102345313 B1 KR 102345313B1 KR 1020200094175 A KR1020200094175 A KR 1020200094175A KR 20200094175 A KR20200094175 A KR 20200094175A KR 102345313 B1 KR102345313 B1 KR 102345313B1
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- protective film
- fluorine
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- 239000000758 substrate Substances 0.000 title claims abstract description 187
- 238000012545 processing Methods 0.000 title claims abstract description 181
- 239000004065 semiconductor Substances 0.000 title claims description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 239000007789 gas Substances 0.000 claims abstract description 388
- 230000001681 protective effect Effects 0.000 claims abstract description 142
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 39
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000011737 fluorine Substances 0.000 claims abstract description 31
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 18
- 239000001301 oxygen Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims description 88
- 230000008569 process Effects 0.000 claims description 47
- 229910052710 silicon Inorganic materials 0.000 claims description 32
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 15
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 3
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- 238000007254 oxidation reaction Methods 0.000 claims description 3
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 35
- 150000003254 radicals Chemical class 0.000 description 30
- 229910003902 SiCl 4 Inorganic materials 0.000 description 23
- 238000001179 sorption measurement Methods 0.000 description 18
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 12
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- 125000000217 alkyl group Chemical group 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 230000036961 partial effect Effects 0.000 description 8
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 7
- 239000012528 membrane Substances 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 6
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
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- 125000001183 hydrocarbyl group Chemical group 0.000 description 5
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- 125000003545 alkoxy group Chemical group 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
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- 239000005046 Chlorosilane Substances 0.000 description 3
- 229910003697 SiBN Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- CFOAUMXQOCBWNJ-UHFFFAOYSA-N [B].[Si] Chemical compound [B].[Si] CFOAUMXQOCBWNJ-UHFFFAOYSA-N 0.000 description 3
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- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- SFLARCZJKUXPCE-UHFFFAOYSA-N N-butan-2-yl-N-silylbutan-2-amine Chemical compound CCC(C)N([SiH3])C(C)CC SFLARCZJKUXPCE-UHFFFAOYSA-N 0.000 description 2
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- 229910010282 TiON Inorganic materials 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
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- KSFBTBXTZDJOHO-UHFFFAOYSA-N diaminosilicon Chemical compound N[Si]N KSFBTBXTZDJOHO-UHFFFAOYSA-N 0.000 description 2
- AWFPGKLDLMAPMK-UHFFFAOYSA-N dimethylaminosilicon Chemical compound CN(C)[Si] AWFPGKLDLMAPMK-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
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- 239000011810 insulating material Substances 0.000 description 2
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- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 210000003141 lower extremity Anatomy 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
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- 239000010937 tungsten Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- BIVNKSDKIFWKFA-UHFFFAOYSA-N N-propan-2-yl-N-silylpropan-2-amine Chemical compound CC(C)N([SiH3])C(C)C BIVNKSDKIFWKFA-UHFFFAOYSA-N 0.000 description 1
- CLQPEJKJHMMRRW-UHFFFAOYSA-N N-silylpropan-2-amine Chemical compound CC(C)N[SiH3] CLQPEJKJHMMRRW-UHFFFAOYSA-N 0.000 description 1
- ODUCDPQEXGNKDN-UHFFFAOYSA-N Nitrogen oxide(NO) Natural products O=N ODUCDPQEXGNKDN-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910003691 SiBr Inorganic materials 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- VQPFDLRNOCQMSN-UHFFFAOYSA-N bromosilane Chemical compound Br[SiH3] VQPFDLRNOCQMSN-UHFFFAOYSA-N 0.000 description 1
- 125000004106 butoxy group Chemical group [*]OC([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
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- 239000001569 carbon dioxide Substances 0.000 description 1
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- 239000012159 carrier gas Substances 0.000 description 1
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- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
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- 229910000071 diazene Inorganic materials 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- VGOMSCOZEZUPFL-UHFFFAOYSA-N diethyl(piperidin-1-yl)silane Chemical compound CC[SiH](CC)N1CCCCC1 VGOMSCOZEZUPFL-UHFFFAOYSA-N 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- IDXQEORXXMRRCX-UHFFFAOYSA-N dimethyl(piperidin-1-yl)silane Chemical compound C[SiH](C)N1CCCCC1 IDXQEORXXMRRCX-UHFFFAOYSA-N 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
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- 238000011534 incubation Methods 0.000 description 1
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- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- IDIOJRGTRFRIJL-UHFFFAOYSA-N iodosilane Chemical compound I[SiH3] IDIOJRGTRFRIJL-UHFFFAOYSA-N 0.000 description 1
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- 238000010030 laminating Methods 0.000 description 1
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- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- ZEIYBPGWHWECHV-UHFFFAOYSA-N nitrosyl fluoride Chemical compound FN=O ZEIYBPGWHWECHV-UHFFFAOYSA-N 0.000 description 1
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- 230000003287 optical effect Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 125000002572 propoxy group Chemical group [*]OC([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
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- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- AIFMYMZGQVTROK-UHFFFAOYSA-N silicon tetrabromide Chemical compound Br[Si](Br)(Br)Br AIFMYMZGQVTROK-UHFFFAOYSA-N 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- CFTHARXEQHJSEH-UHFFFAOYSA-N silicon tetraiodide Chemical compound I[Si](I)(I)I CFTHARXEQHJSEH-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- PZKOFHKJGUNVTM-UHFFFAOYSA-N trichloro-[dichloro(trichlorosilyl)silyl]silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)[Si](Cl)(Cl)Cl PZKOFHKJGUNVTM-UHFFFAOYSA-N 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
-
- C—CHEMISTRY; METALLURGY
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Abstract
Description
도 2는 본 개시의 일 양태에서 적합하게 사용되는 기판 처리 장치의 종형 처리로의 개략 구성도이며, 처리로(202) 부분을 도 1의 A-A선 단면도로 도시하는 도면이다.
도 3은 본 개시의 일 양태에서 적합하게 사용되는 기판 처리 장치의 컨트롤러(121)의 개략 구성도이며, 컨트롤러(121)의 제어계를 블록도로 도시하는 도면이다.
도 4는 본 개시의 일 양태의 선택 성장에서의 처리 시퀀스를 도시하는 도면이다.
도 5의 (a)는 세정 처리 전의 웨이퍼(200)의 표면에서의 단면 부분 확대도이다. 도 5의 (b)는, 표면에, 실리콘 질화막을 포함하는 하지(200a), 실리콘 산화막을 포함하는 하지(200b), 및 실리콘을 포함하는 하지(200c)가 각각 노출된 세정 처리 후의 웨이퍼(200)의 표면에서의 단면 부분 확대도이다. 도 5의 (c)는 산소 함유 가스를 공급함으로써, 하지(200c)의 표면에 보호막(200e)을 형성한 후의 웨이퍼(200)의 표면에서의 단면 부분 확대도이다. 도 5의 (d)는 아미노실란계 가스를 공급함으로써, 하지(200b) 및 보호막(200e) 각각의 표면에 실리콘을 선택적으로 흡착시킨 후의 웨이퍼(200)의 표면에서의 단면 부분 확대도이다. 도 5의 (e)는 불소 함유 가스를 공급함으로써, 실리콘을 흡착시킨 하지(200b) 및 보호막(200e) 각각의 표면을, 선택적으로 개질시킨 후의 웨이퍼(200)의 표면에서의 단면 부분 확대도이다. 도 5의 (f)는 하지(200a)의 표면 상에 실리콘 질화막을 선택적으로 형성한 후의 웨이퍼(200)의 표면에서의 단면 부분 확대도이다. 도 5의 (g)는 도 5의 (f)에 도시하는 웨이퍼(200)를 대기 폭로한 후의 웨이퍼(200)의 표면에서의 단면 부분 확대도이다.
Claims (20)
- (a) 산소 비함유의 제1 하지와, 산소를 함유하는 제2 하지와, 산소 및 질소 비함유의 제3 하지가 표면에 노출된 기판에 대하여 처리 가스를 공급함으로써, 상기 제3 하지의 표면에 보호막을 형성하는 공정과,
(b) 상기 제3 하지의 표면에 상기 보호막을 형성한 후의 상기 기판에 대하여 불소 함유 가스를 공급함으로써, 상기 제2 하지의 표면을 불소 종단시키도록 개질시키는 공정과,
(c) 상기 제2 하지의 표면을 개질시킨 후의 상기 기판에 대하여 성막 가스를 공급함으로써, 상기 제1 하지의 표면 상에 선택적으로 막을 형성하는 공정
을 갖는 반도체 장치의 제조 방법. - 제1항에 있어서, 상기 보호막은 산소를 함유하는, 반도체 장치의 제조 방법.
- 제2항에 있어서, (a)에서는, 상기 처리 가스로서 산소 함유 가스를 공급하여, 상기 제3 하지의 표면을 산화시킴으로써, 상기 보호막을 형성하는, 반도체 장치의 제조 방법.
- 제3항에 있어서, (a)에서는, 상기 제3 하지의 표면을 드라이 산화에 의해 산화시키는, 반도체 장치의 제조 방법.
- 제3항에 있어서, (a)에서는, 대기압 미만의 압력 하에서, 상기 제3 하지의 표면을 산화시키는, 반도체 장치의 제조 방법.
- 제3항에 있어서, (a)에서는, 상기 제1 하지의 표면이 산화되지 않는 조건 하에서, 상기 제3 하지의 표면을 산화시키는, 반도체 장치의 제조 방법.
- 제2항에 있어서, (b)에서는, 상기 보호막의 표면도 불소 종단시키도록 개질시키는, 반도체 장치의 제조 방법.
- 제1항에 있어서, (b)에서는, 상기 제2 하지의 표면을, 에칭시키지 않고 불소 종단시키도록 개질시키는, 반도체 장치의 제조 방법.
- 제1항에 있어서, (b)에서는, 실리콘이 존재하는 분위기 하에서, 상기 기판에 대하여 상기 불소 함유 가스를 공급하는, 반도체 장치의 제조 방법.
- 제1항에 있어서, (b)에서는,
(b1) 상기 기판에 대하여 아미노실란계 가스를 공급하는 공정과,
(b2) 상기 기판에 대하여 상기 불소 함유 가스를 공급하는 공정
을 순차 행함으로써, 상기 제2 하지의 표면을 불소 종단시키도록 개질시키는, 반도체 장치의 제조 방법. - 제10항에 있어서, (b1)에서는, 상기 제2 하지의 표면에 상기 아미노실란계 가스에 포함되는 실리콘을 흡착시키고,
(b2)에서는, 상기 제2 하지의 표면에 흡착시킨 실리콘과, 상기 불소 함유 가스를 반응시켜서, 상기 제2 하지의 표면을 불소 종단시키는, 반도체 장치의 제조 방법. - 제11항에 있어서, (b1)에서는, 상기 보호막의 표면에 상기 아미노실란계 가스에 포함되는 실리콘을 흡착시키고,
(b2)에서는, 상기 보호막의 표면에 흡착시킨 실리콘과, 상기 불소 함유 가스를 반응시켜서, 상기 보호막의 표면을 불소 종단시키는, 반도체 장치의 제조 방법. - 제1항에 있어서, (a)를 행하기 전에, (d) 상기 기판의 표면에 형성된 자연 산화막을 제거하는 공정을 더 갖는, 반도체 장치의 제조 방법.
- 제13항에 있어서, (d)에서는, 상기 제1 하지의 소재를 드러나게 해서 노출시키는, 반도체 장치의 제조 방법.
- 제14항에 있어서, (d)에서는, 상기 제3 하지의 소재를 드러나게 해서 노출시키는, 반도체 장치의 제조 방법.
- 제1항에 있어서, 상기 제1 하지는 질화막을 포함하고, 상기 제2 하지는 산화막을 포함하고, 상기 제3 하지는 반도체 물질을 포함하는, 반도체 장치의 제조 방법.
- 제1항에 있어서, 상기 제1 하지는 실리콘 및 질소를 함유하고, 상기 제2 하지는 실리콘 및 산소를 함유하고, 상기 제3 하지는 실리콘을 함유하는, 반도체 장치의 제조 방법.
- 제1항에 있어서, 상기 제1 하지는 실리콘 질화막을 포함하고, 상기 제2 하지는 실리콘 산화막을 포함하고, 상기 제3 하지는 단결정 실리콘, 에피택셜 실리콘막, 다결정 실리콘막, 또는 아몰퍼스 실리콘막을 포함하는, 반도체 장치의 제조 방법.
- 기판이 처리되는 처리실과,
상기 처리실 내의 기판에 대하여 처리 가스를 공급하는 처리 가스 공급계와,
상기 처리실 내의 기판에 대하여 불소 함유 가스를 공급하는 불소 함유 가스 공급계와,
상기 처리실 내의 기판에 대하여 성막 가스를 공급하는 성막 가스 공급계와,
상기 처리실 내에서, (a) 산소 비함유의 제1 하지와, 산소를 함유하는 제2 하지와, 산소 및 질소 비함유의 제3 하지가 표면에 노출된 기판에 대하여 상기 처리 가스를 공급함으로써, 상기 제3 하지의 표면에 보호막을 형성하는 처리와, (b) 상기 제3 하지의 표면에 상기 보호막을 형성한 후의 상기 기판에 대하여 상기 불소 함유 가스를 공급함으로써, 상기 제2 하지의 표면을 불소 종단시키도록 개질시키는 처리와, (c) 상기 제2 하지의 표면을 개질시킨 후의 상기 기판에 대하여 상기 성막 가스를 공급함으로써, 상기 제1 하지의 표면 상에 선택적으로 막을 형성하는 처리를 행하게 하도록, 상기 처리 가스 공급계, 상기 불소 함유 가스 공급계, 및 상기 성막 가스 공급계를 제어하는 것이 가능하게 구성되는 제어부
를 갖는 기판 처리 장치. - 기판 처리 장치의 처리실 내에서,
(a) 산소 비함유의 제1 하지와, 산소를 함유하는 제2 하지와, 산소 및 질소 비함유의 제3 하지가 표면에 노출된 기판에 대하여 처리 가스를 공급함으로써, 상기 제3 하지의 표면에 보호막을 형성하는 수순과,
(b) 상기 제3 하지의 표면에 상기 보호막을 형성한 후의 상기 기판에 대하여 불소 함유 가스를 공급함으로써, 상기 제2 하지의 표면을 불소 종단시키도록 개질시키는 수순과,
(c) 상기 제2 하지의 표면을 개질시킨 후의 상기 기판에 대하여 성막 가스를 공급함으로써, 상기 제1 하지의 표면 상에 선택적으로 막을 형성하는 수순
을 컴퓨터에 의해 상기 기판 처리 장치에 실행시키는, 컴퓨터 판독 가능한 기록 매체에 기록된 프로그램.
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