KR102344529B1 - Apparatus and method for treating substrate - Google Patents

Abstract

A substrate processing apparatus is disclosed. The substrate processing apparatus includes a chamber having a processing space therein, a substrate support unit for supporting a substrate in the processing space, a gas supply unit for supplying gas into the processing space, and a high-frequency power supply for applying high-frequency power, A plasma generating unit generating plasma from a gas using and a filter unit for preventing coupling between the applied heater power supply and the heating member and the high frequency power source, wherein the filter unit includes a filter for blocking the high frequency power supplied from the high frequency power supply and a filter control unit for preventing deterioration of the filter performance do.

Description

Substrate processing apparatus and substrate processing method {APPARATUS AND METHOD FOR TREATING SUBSTRATE}

The present invention relates to a substrate processing apparatus and a substrate processing method, and more particularly, to a substrate processing apparatus having a filter for preventing coupling between a heater and a high frequency power supply, and a substrate processing method thereof.

In order to manufacture a semiconductor device, various processes such as photolithography, etching, ashing, ion implantation, thin film deposition, and cleaning are performed on a substrate to form a desired pattern on the substrate. Among them, the etching process is a process of removing a selected heating region from among the films formed on the substrate, and wet etching and dry etching are used.

Among them, an etching apparatus using plasma is used for dry etching. In general, in order to form plasma, an electromagnetic field is formed in an internal space of a chamber, and the electromagnetic field excites a process gas provided in the chamber into a plasma state.

Plasma refers to an ionized gas state composed of ions, electrons, radicals, and the like. Plasma is generated by a very high temperature or strong electric field or RF Electromagnetic Fields. In a semiconductor device manufacturing process, an etching process is performed using plasma. The etching process is performed when ion particles contained in plasma collide with the substrate. At this time, coupling may occur between the high-frequency power supplied from the high-frequency power source for generating plasma and the heating member for heating the substrate, and a cut-off filter is used for the heating member to prevent such coupling. However, when the cut-off filter is connected to the chamber, there is a problem that the performance of the cut-off filter is deteriorated due to the impedance change of the chamber, and the voltage change of the lower electrode due to the cut-off filter and the connection cable between the cut-off filter and the electrostatic chuck occurs. There was a problem affecting

SUMMARY OF THE INVENTION It is an object of the present invention to provide a substrate processing apparatus capable of preventing deterioration in performance of a coupling cutoff filter.

In addition, the present invention compensates for the electrostatic chuck voltage deviation between chambers through a coupling cutoff filter, thereby reducing the deviation of the insulator collision between the ions between the chambers, thereby reducing the process deviation.

The problem to be solved by the present invention is not limited to the above-mentioned problems, and the problems not mentioned will be clearly understood by those of ordinary skill in the art to which the present invention belongs from the present specification and accompanying drawings. .

A substrate processing apparatus according to an embodiment of the present invention for achieving the above object includes a chamber having a processing space therein, a substrate support unit supporting a substrate in the processing space, and a gas supplying gas into the processing space A plasma generating unit comprising: a supply unit; a heating unit for controlling includes a filter for blocking the high frequency power supplied from the high frequency power supply, and a filter control unit for preventing deterioration of the filter performance.

Here, the filter control unit includes a first variable element connected in series with the filter, a second variable element connected in parallel with the filter, and a control unit for adjusting impedance values of the first variable element and the second variable element can do.

Here, the control unit may adjust an impedance value of the first variable element to compensate for a change in impedance of the plasma generating unit caused by the filter unit.

Here, the controller may adjust the impedance value of the second variable element to adjust the resonance point of the filter unit.

Also, the first variable element and the second variable element may be variable capacitors.

Here, the filter includes an inductor and a capacitor connected in parallel to each other, the second variable element is connected in parallel with the inductor and the capacitor, and the first variable element is the inductor, the capacitor and the second variable element. It may be connected in series with the variable element.

In addition, the heating unit may further include a voltage measuring member for measuring a voltage of a lower electrode to which the high frequency power is applied, and the controller includes the first variable element and the second variable element based on the voltage of the lower electrode. The impedance value of the device can be adjusted.

Here, the controller may control the voltage of the lower electrode to have a preset value by adjusting impedance values of the first variable element and the second variable element.

In addition, the heater power supply may be an AC power supply.

Here, the filter unit may further include a heater power filter that is provided between the filter and the heater power supply and blocks a preset frequency range from the power supplied from the heater power source.

Here, the heater power filter may include an inductor and a capacitor connected to each other in parallel.

In addition, each of the first variable element and the second variable element may be provided in plurality.

On the other hand, the substrate processing method according to an embodiment of the present invention, in the substrate processing method of the substrate processing apparatus according to the present invention, by adjusting the impedance value of the first variable element, the plasma generating unit by the filter unit Compensate for impedance changes.

Here, the resonance point of the filter unit may be adjusted by adjusting the impedance value of the second variable element.

Here, the voltage of the lower electrode to which the high frequency power is applied may be measured, and impedance values of the first variable element and the second variable element may be adjusted based on the measured voltage of the lower electrode.

Here, by adjusting impedance values of the first variable element and the second variable element, the voltage of the lower electrode may be controlled to have a preset value.

Also, the etching rate of the substrate processing apparatus may be adjusted by adjusting impedance values of the first variable element and the second variable element.

Also, the first variable element and the second variable element may be variable capacitors.

According to various embodiments of the present invention as described above, the performance of the cut-off filter does not deteriorate and the influence of the cut-off filter on the process can be minimized.

The effects of the present invention are not limited to the above-described effects, and the effects not mentioned will be clearly understood by those of ordinary skill in the art to which the present invention belongs from the present specification and accompanying drawings.

1 is a cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view illustrating a substrate supporting unit in detail in the substrate processing apparatus of FIG. 1 .
3 is a circuit diagram illustrating a filter unit according to an embodiment of the present invention.
4 is a circuit diagram illustrating a filter unit according to another embodiment of the present invention.
5 is a cross-sectional view illustrating a substrate support unit according to another embodiment of the present invention.
6 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention.

Other advantages and features of the present invention, and a method for achieving them will become apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms, and only this embodiment serves to complete the disclosure of the present invention, and to obtain common knowledge in the technical field to which the present invention pertains. It is provided to fully inform the possessor of the scope of the invention, and the present invention is only defined by the scope of the claims.

Even if not defined, all terms (including technical or scientific terms) used herein have the same meaning as commonly accepted by common technology in the prior art to which this invention belongs. Terms defined by general dictionaries may be interpreted as having the same meaning as in the related description and/or in the text of the present application, and shall not be conceptualized or overly formally construed even if not expressly defined herein. won't

The terminology used herein is for the purpose of describing the embodiments and is not intended to limit the present invention. In this specification, the singular also includes the plural unless specifically stated otherwise in the phrase. As used herein, 'comprise' and/or the various conjugations of this verb, eg, 'comprising', 'comprising', 'comprising', 'comprising', etc., refer to the stated composition, ingredient, component, A step, operation and/or element does not exclude the presence or addition of one or more other compositions, components, components, steps, operations and/or elements. As used herein, the term 'and/or' refers to each of the listed components or various combinations thereof.

1 is a cross-sectional view illustrating a substrate processing apparatus 10 according to an embodiment of the present invention.

Referring to FIG. 1 , the substrate processing apparatus 10 includes a chamber 100 , a substrate support unit 200 , a gas supply unit 400 , and a plasma generation unit 300 .

Referring to FIG. 1 , the substrate processing apparatus 10 processes the substrate W using plasma. For example, the substrate processing apparatus 10 may perform an etching process on the substrate W. The substrate processing apparatus 10 may include a chamber 100 , a substrate support unit 200 , a gas supply unit 400 , a plasma source, and a baffle unit 500 .

The chamber 100 may provide a processing space in which a substrate processing process is performed. The chamber 100 has a processing space therein, and may be provided in a closed shape. The chamber 100 may be made of a metal material. According to an embodiment, the chamber 100 may be made of an aluminum material. The chamber 100 may be grounded. An exhaust hole 102 may be formed in the bottom surface of the chamber 100 . The exhaust hole 102 may be connected to the exhaust line 151 . Reaction by-products generated during the process and gas remaining in the internal space of the chamber may be discharged to the outside through the exhaust line 151 . The interior of the chamber 100 may be decompressed to a predetermined pressure by the exhaust process.

According to an embodiment, the liner 130 may be provided inside the chamber 100 . The liner 130 may have a cylindrical shape with open top and bottom surfaces. The liner 130 may be provided to contact the inner surface of the chamber 100 . The liner 130 may protect the inner wall of the chamber 100 to prevent the inner wall of the chamber 100 from being damaged by arc discharge. In addition, it is possible to prevent impurities generated during the substrate processing process from being deposited on the inner wall of the chamber 100 . Optionally, the liner 130 may not be provided.

The substrate support unit 200 may be positioned inside the chamber 100 . The substrate support unit 200 may support the substrate W. The substrate support unit 200 may include an electrostatic chuck 210 for adsorbing the substrate W using an electrostatic force. Alternatively, the substrate support unit 200 may support the substrate W in various ways such as mechanical clamping. Hereinafter, the substrate support unit 200 including the electrostatic chuck 210 will be described.

The substrate support unit 200 may include an electrostatic chuck 210 , a lower cover 250 , and a plate 270 . The substrate support unit 200 is located inside the chamber 100 and spaced apart from the bottom surface of the chamber 100 upwardly.

The electrostatic chuck 210 may include a dielectric plate 220 , a body 230 , and a ring assembly 240 . The dielectric plate 220 may be positioned on the top of the electrostatic chuck 210 . The dielectric plate 220 may be provided as a disk-shaped dielectric (dielectric substance). A substrate W may be placed on the upper surface of the dielectric plate 220 . The upper surface of the dielectric plate 220 may have a smaller radius than the substrate W. The edge region of the substrate W may be located outside the dielectric plate 220 .

The dielectric plate 220 may include a first electrode 223 , a heating member 225 , and a first supply passage 221 therein. The first supply passage 221 may be provided from an upper surface to a lower surface of the dielectric plate 210 . A plurality of first supply passages 221 may be formed to be spaced apart from each other, and may be provided as passages through which the heat transfer medium is supplied to the bottom surface of the substrate W.

The first electrode 223 may be electrically connected to the first power source 223a. The first power source 223a may include a DC power source. A switch 223b may be installed between the first electrode 223 and the first power source 223a. The first electrode 223 may be electrically connected to the first power source 223a by ON/OFF of the switch 223b. When the switch 223b is turned on, a direct current may be applied to the first electrode 223 . An electrostatic force acts between the first electrode 223 and the substrate W by the current applied to the first electrode 223 , and the substrate W may be adsorbed to the dielectric plate 220 by the electrostatic force.

The heating member 225 may be positioned under the first electrode 223 . The heating member 225 may be electrically connected to the heater power supply 225a. The heater power source 225a may be an AC power source. The heating member 225 may generate heat by resisting the current applied from the heater power supply 225a. The generated heat may be transferred to the substrate W through the dielectric plate 220 . The substrate W may be maintained at a predetermined temperature by the heat generated by the heating member 225 . The heating member 225 may include a spiral-shaped coil.

The body 230 may be positioned under the dielectric plate 220 . The bottom surface of the dielectric plate 220 and the top surface of the body 230 may be bonded by a bonding unit 236 . The body 230 may be made of an aluminum material. The upper surface of the body 230 may be stepped so that the central region is higher than the edge region. The central region of the top surface of the body 230 may have an area corresponding to the bottom surface of the dielectric plate 220 , and may be adhered to the bottom surface of the dielectric plate 220 . The body 230 may have a first circulation passage 231 , a second circulation passage 232 , and a second supply passage 233 formed therein.

The first circulation passage 231 may be provided as a passage through which the heat transfer medium circulates. The first circulation passage 231 may be formed in a spiral shape inside the body 230 . Alternatively, the first circulation passage 231 may be arranged such that ring-shaped passages having different radii have the same center. Each of the first circulation passages 231 may communicate with each other. The first circulation passages 231 may be formed at the same height.

The second circulation passage 232 may be provided as a passage through which the cooling fluid circulates. The second circulation passage 232 may be formed in a spiral shape inside the body 230 . Alternatively, the second circulation passage 232 may be arranged such that ring-shaped passages having different radii have the same center. Each of the second circulation passages 232 may communicate with each other. The second circulation passage 232 may have a larger cross-sectional area than the first circulation passage 231 . The second circulation passages 232 may be formed at the same height. The second circulation passage 232 may be located below the first circulation passage 231 .

The second supply passage 233 may extend upwardly from the first circulation passage 231 , and may be provided on the upper surface of the body 230 . The second supply passage 243 may be provided in a number corresponding to the first supply passage 221 , and may connect the first circulation passage 231 and the first supply passage 221 .

The first circulation passage 231 may be connected to the heat transfer medium storage unit 231a through the heat transfer medium supply line 231b. A heat transfer medium may be stored in the heat transfer medium storage unit 231a. The heat transfer medium may include an inert gas. According to an embodiment, the heat transfer medium may include helium (He) gas. The helium gas may be supplied to the first circulation passage 231 through the supply line 231b, and may be supplied to the bottom surface of the substrate W through the second supply passage 233 and the first supply passage 221 sequentially. can The helium gas serves as a medium for transferring heat transferred from the plasma to the substrate W to the electrostatic chuck 210 .

The second circulation passage 232 may be connected to the cooling fluid storage unit 232a through the cooling fluid supply line 232c. A cooling fluid may be stored in the cooling fluid storage unit 232a. A cooler 232b may be provided in the cooling fluid storage unit 232a. The cooler 232b may cool the cooling fluid to a predetermined temperature. Alternatively, the cooler 232b may be installed on the cooling fluid supply line 232c. The cooling fluid supplied to the second circulation passage 232 through the cooling fluid supply line 232c circulates along the second circulation passage 232 to cool the body 230 . As the body 230 is cooled, the dielectric plate 220 and the substrate W are cooled together to maintain the substrate W at a predetermined temperature.

The body 230 may include a metal plate. According to an example, the entire body 230 may be provided as a metal plate. The body 230 may be electrically connected to the third power source 235a. The third power source 235a may be provided as a high frequency power source for generating high frequency power. The high-frequency power source may be an RF power source. The body 230 may receive high-frequency power from the third power source 235a. Due to this, the body 230 may function as an electrode.

The ring assembly 240 is provided in a ring shape. The ring assembly 240 is provided to surround the circumference of the dielectric plate 220 . The ring assembly 240 supports the edge region of the substrate W. According to an example, the ring assembly 240 includes a focus ring 240b and an insulating ring 240a. The focus ring 240b is provided to surround the dielectric plate 220 and concentrates plasma to the substrate W. The insulating ring 240a is provided to surround the focus ring 240b. Optionally, the ring assembly 240 may include an edge ring (not shown) provided in close contact with the periphery of the focus ring 240b to prevent the side surface of the dielectric plate 220 from being damaged by the plasma. Unlike the above, the structure of the ring assembly 240 may be variously changed.
The plasma generating unit 300 is located above the support unit 200 in the process chamber 100 . The plasma generating unit 300 is positioned to face the support unit 200 .
The plasma generating unit 300 includes a shower head 310 and a support 330 . The shower head 310 is positioned to be spaced apart from the upper surface of the chamber 100 by a predetermined distance downward. A predetermined space is formed between the shower head 310 and the upper surface of the chamber 100 . The shower head 310 may be provided in a plate shape having a constant thickness.
The bottom surface of the shower head 310 may be anodized to prevent arcing by plasma. A cross-section of the shower head 310 may be provided to have the same shape and cross-sectional area as the support unit 200 . The shower head 310 includes a plurality of spray holes 311 . The injection hole 311 penetrates the upper and lower surfaces of the shower head 310 in a vertical direction. The shower head 310 includes a metal material.
The injection hole 321 penetrates the upper and lower surfaces of the shower head 310 in a vertical direction. The spray hole 321 is positioned to face the spray hole 311 of the shower head 310 .
The shower head 310 may be electrically connected to the upper power supply 351 . The upper power source 351 may be provided as a high frequency power source. Alternatively, the shower head 310 may be electrically grounded. The shower head 310 may be electrically connected to the upper power supply 351 . Alternatively, the shower head 310 may be grounded to function as an electrode.
The gas supply unit 400 supplies a process gas into the process chamber 100 . The gas supply unit 400 includes a gas supply nozzle 410 , a gas supply line 420 , and a gas storage unit 430 . The gas supply nozzle 410 is installed in the center of the upper surface of the process chamber 100 . An injection hole is formed on the bottom surface of the gas supply nozzle 410 . The injection hole supplies the process gas into the process chamber 100 .
The gas supply line 420 connects the gas supply nozzle 410 and the gas storage unit 430 . The gas supply line 420 supplies the process gas stored in the gas storage unit 430 to the gas supply nozzle 410 . A valve 421 is installed in the gas supply line 420 . The valve 421 opens and closes the gas supply line 420 and controls the flow rate of the process gas supplied through the gas supply line 420 .

FIG. 2 is a cross-sectional view illustrating a substrate supporting unit in detail in the substrate processing apparatus of FIG. 1 .

Referring to FIG. 2 , a filter unit 225c is positioned between the heating member 225 and the heater power source 225a. The heating member 225 maintains the substrate W at the process temperature during the process. The heating member 225 may be provided as a heating wire. The heating member 225, the heater power supply 225a, and the filter unit 225c constitute a heating unit that controls the temperature of the substrate.

As described above, the third power source 235a may be provided as a high frequency power source for generating high frequency power, and a matching unit 235c may be connected between the body 230 functioning as an electrode and the third power source 235a. have.

The filter unit 225c prevents coupling between the heating element 225 and the high frequency power supply 235a. Specifically, coupling may occur by high-frequency power provided from the high-frequency power supply 235a and AC power provided from the heater power supply 225a, and the filter unit 225c prevents the coupling between the high-frequency power and AC power. can be prevented

Hereinafter, the structure of the filter unit 225c according to an embodiment of the present invention will be described in detail with reference to FIG. 3 . The filter unit 225c includes filter control units 610 and 620 , a filter 630 and a heater power filter 640 .

The filter control units 610 and 620 may prevent degradation of the filter 630 . The filter control units 610 and 620 include a first variable element 610 , a second variable element 620 , and a control unit (not shown). The first variable element 610 is connected in series with the filter 630 . The first variable element 610 may be provided as a variable capacitor. In the first variable element 610 , an impedance value (capacitance value) is adjusted by a controller (not shown) to compensate for an impedance change of the plasma generating unit 300 caused by the filter unit 225c. Specifically, the filter unit 225c may include a cable connecting the electrostatic chuck 210 and the filter unit 225c. An impedance change of the plasma generating unit 300 may occur by a cable connecting the filter unit 225c and the electrostatic chuck 210 . In this case, the first variable element 610 adjusts an impedance value (capacitance value). Thus, it is possible to compensate for the impedance change of the plasma generating unit 300 due to the cable of the filter unit 225c.

The second variable element 620 is connected in parallel with the filter 630 . The second variable element 620 may be provided as a variable capacitor. The second variable element 620 may adjust the resonance point of the filter unit 225c by adjusting an impedance value (capacitance value) by a controller (not shown). The controller (not shown) may adjust impedance values (capacitance values) of the first variable element 610 and the second variable element 620 . For example, when the same etching rate is to be provided in a plurality of chambers in which the etching process is performed, the control unit (not shown) of the filter unit 225c provided to each chamber adjusts the capacitance value of the first variable capacitor 610 . The resonance point of the filter unit 225c may be adjusted by adjusting to compensate for the impedance change of the plasma generating unit 300, or the capacitance value of the second variable capacitor 620 may be adjusted to adjust the resonance point of the filter unit 225c. Accordingly, it is possible to control the etching rate in the plurality of chambers.

In the plasma generating unit 300 , the etching rate in the plurality of chambers may be adjusted by adjusting a resonance point for a current flowing through each electrode and a capacitance value.

The filter 630 blocks the high frequency power supplied from the high frequency power supply 235a. The filter 630 may be provided as a band cut filter, but is not limited thereto. The filter 630 may include an inductor 631 and a capacitor 632 . The filter 630 may be provided by connecting an inductor 631 and a capacitor 632 in parallel to each other. For example, the filter 630 is provided by connecting an inductor 631 and a capacitor 632 in parallel, and the second variable element 620 is a filter 630 in which the inductor 631 and the capacitor 632 are connected in parallel. The first variable element 610 may be provided by being connected in series with a circuit in which the second variable element 620 , the inductor 631 and the capacitor 632 are connected in parallel.

The heater power filter 640 cuts off a preset frequency range from the power supplied from the heater power source 225a. The heater power filter 640 may be a low-pass filter, but is not limited thereto. The heater power filter 640 may include an inductor 641 and a capacitor 642 connected to each other in parallel.

Also, referring to FIG. 4 , the filter unit 225c ′ according to another embodiment of the present invention includes first variable elements 610-1 and 610-2 and second variable elements 620-1 and 620-2. , filters 630-1 and 630-2, and a plurality of heater power filters 640-1 and 640-2, respectively, may be provided. The controller (not shown) compensates for a change in the voltage (bias voltage) of the electrostatic chuck 210 of the plasma generating unit 300 by adjusting the capacitance values of the plurality of first variable elements 610 - 1 and 610 - 2 , or By adjusting the capacitance values of the second variable elements 620-1 and 620-2 of the plurality of filters 630-1 and 630-2, the resonance points of the plurality of filters 630-1 and 630-2 are adjusted. performance degradation can be prevented.

In addition, as shown in FIG. 5 , a plurality of heater power sources 225a and 225b may be connected to the heating member 225 provided at different positions for temperature control for each region of the substrate, and a plurality of heater power sources 225a and 225b may be connected to each other. A plurality of filter units 225c and 225d respectively connected to may be provided.

As described above, the third power source 235a may be provided as a high frequency power source for generating high frequency power, and the body 230 may function as an electrode (hereinafter, the body 230 is used as the lower electrode 230 ). refers to). To the lower electrode 230 , high-frequency power is applied from the third power source 235a to generate plasma in the processing space of the chamber 100 . A voltage measuring member (not shown) for measuring the voltage of the lower electrode 230 may be provided on the lower electrode 230 . The control unit (not shown) of the filter control unit 225c is the impedance of the first variable element 610 and the second variable element 620 based on the voltage of the lower electrode 230 measured by the voltage measuring member (not shown). The value can be adjusted. Also, the controller (not shown) may control the voltage of the lower electrode 230 to have a preset value by adjusting the impedance values of the first variable element 610 and the second variable element 620 . For example, when the optimum value of the voltage of the lower electrode 230 is set based on the etching rate of the chamber 100 , the controller (not shown) controls the impedance of the first variable element 610 and the second variable element 620 . By adjusting the value, the voltage of the lower electrode 230 may be controlled to have an optimal value. Accordingly, the process influence by the filter unit 225c may be minimized, and process variations between the plurality of chambers may be reduced.

6 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention.

Referring to FIG. 6 , the impedance change of the plasma generating unit caused by the filter unit is compensated for by adjusting the impedance value of the first variable element ( S610 ). Next, the resonance point of the filter unit is adjusted by adjusting the impedance value of the second variable element ( S620 ). Then, the voltage of the lower electrode is controlled to have a preset value by adjusting the impedance values of the first variable element and the second variable element ( S630 ). Also, the voltage of the lower electrode to which the high frequency power is applied may be measured, and impedance values of the first variable element and the second variable element may be adjusted based on the measured voltage of the lower electrode. In addition, the etching rate of the substrate processing apparatus may be adjusted by adjusting impedance values of the first variable element and the second variable element. Accordingly, it is possible to prevent a process deviation from occurring between the plurality of chambers.

According to various embodiments of the present invention as described above, by adjusting the impedance values of the first variable element and the second variable element, it is possible to prevent deterioration of the filter unit's performance and minimize the process influence of the filter unit in the substrate processing apparatus. have.

In the above, although it has been described that the etching process is performed using plasma in the above embodiment, the substrate processing process is not limited thereto, and may be applied to various substrate processing processes using plasma, for example, a deposition process, an ashing process, and a cleaning process. can In addition, in the above embodiment, the plasma generating unit has been described as a structure provided as a capacitively coupled plasma source. However, alternatively, the plasma generating unit may be provided as an inductively coupled plasma (ICP). The inductively coupled plasma may include an antenna.

It should be understood that the above embodiments are presented to help the understanding of the present invention, and do not limit the scope of the present invention, and various modified embodiments may also be included in the scope of the present invention. For example, each component shown in the embodiment of the present invention may be implemented in a distributed manner, conversely, several dispersed components may be combined and implemented. Therefore, the technical protection scope of the present invention should be determined by the technical idea of the claims, and the technical protection scope of the present invention is not limited to the literal description of the claims itself, but is substantially equivalent to the technical value. It should be understood that the scope of the invention extends to one category of invention.

10: substrate processing apparatus 100: chamber
200: substrate support unit 225: heating element
225a: heater power 225c: filter unit
230: body 235a: high-frequency power source
240: ring assembly 300: plasma generating unit
400: gas supply unit 610: first variable element
620: second variable element 630: filter
640: heater power filter

Claims (18)

delete a chamber having a processing space therein;
a substrate support unit for supporting a substrate in the processing space;
a gas supply unit supplying gas into the processing space; and
A plasma generating unit including a high-frequency power supply for applying high-frequency power and generating plasma from the gas by using the high-frequency power,
The substrate support unit,
a support plate for supporting the substrate; and
Including; a heating unit for controlling the temperature of the substrate;
The heating unit is
heating element;
a heater power supply for applying power to the heating member; and
a filter unit for preventing coupling between the heating member and the high-frequency power source;
The filter unit is
a filter and a filter control unit;
The filter blocks the high frequency power supplied from the high frequency power supply, and is composed of a fixed capacitor and a fixed inductor between the heating member and the heater power source,
The filter control unit includes a variable element,
The filter control unit,
a first variable element connected between the heating member and the ground;
a second variable element connected between the heating member and the heater power supply; and
and a control unit controlling impedance values of the first variable element and the second variable element. 3. The method of claim 2,
The control unit is
and compensating for a change in impedance caused by the filter unit by adjusting an impedance value of the first variable element. 4. The method of claim 3,
The control unit is
A substrate processing apparatus for controlling a resonance point of the filter unit by adjusting an impedance value of the second variable element. 5. The method according to any one of claims 2 to 4,
The first variable element and the second variable element are variable capacitors. 6. The method of claim 5,
The filter is a substrate processing apparatus including an inductor and a capacitor connected to each other in parallel. 3. The method of claim 2,
The heating unit is
Further comprising; a voltage measuring member for measuring the voltage of the lower electrode to which the high frequency power is applied,
The control unit is
A substrate processing apparatus for adjusting impedance values of the first variable element and the second variable element based on the voltage of the lower electrode. 8. The method of claim 7,
The control unit is
A substrate processing apparatus for controlling the voltage of the lower electrode to have a preset value by adjusting impedance values of the first variable element and the second variable element. 3. The method of claim 2,
The heater power supply is an alternating current power supply. 10. The method of claim 9,
The filter unit is
and a heater power filter provided between the filter and the heater power supply to block a preset frequency range from the power supplied from the heater power supply. 11. The method of claim 10,
The heater power filter may include an inductor and a capacitor connected in parallel to the heater power source. 6. The method of claim 5,
A substrate processing apparatus in which a plurality of the first variable element and the second variable element are provided, respectively. In the substrate processing method of the substrate processing apparatus according to claim 2,
and compensating for a change in impedance caused by the filter unit by adjusting an impedance value of the first variable element. 14. The method of claim 13,
A method of processing a substrate to adjust a resonance point of the filter unit by adjusting an impedance value of the second variable element. 15. The method of claim 14,
A substrate processing method for measuring a voltage of a lower electrode to which the high frequency power is applied, and adjusting impedance values of the first variable element and the second variable element based on the measured voltage of the lower electrode. 16. The method of claim 15,
and controlling the voltage of the lower electrode to have a preset value by adjusting impedance values of the first variable element and the second variable element. 16. The method of claim 15,
and adjusting an etch rate of the substrate processing apparatus by adjusting impedance values of the first variable element and the second variable element. 18. The method according to any one of claims 13 to 17,
The first variable element and the second variable element are variable capacitors.

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