KR102055472B1 - 태양 전지의 공간적으로 위치된 확산 영역을 형성하기 위한 도펀트의 이온 주입 - Google Patents
태양 전지의 공간적으로 위치된 확산 영역을 형성하기 위한 도펀트의 이온 주입 Download PDFInfo
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- KR102055472B1 KR102055472B1 KR1020157018989A KR20157018989A KR102055472B1 KR 102055472 B1 KR102055472 B1 KR 102055472B1 KR 1020157018989 A KR1020157018989 A KR 1020157018989A KR 20157018989 A KR20157018989 A KR 20157018989A KR 102055472 B1 KR102055472 B1 KR 102055472B1
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- 239000002019 doping agent Substances 0.000 title claims abstract description 168
- 238000009792 diffusion process Methods 0.000 title claims abstract description 74
- 238000005468 ion implantation Methods 0.000 title claims description 21
- 239000002210 silicon-based material Substances 0.000 claims abstract description 27
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 23
- 239000011574 phosphorus Substances 0.000 claims abstract description 23
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 21
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052796 boron Inorganic materials 0.000 claims abstract description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 39
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 29
- 239000005388 borosilicate glass Substances 0.000 claims description 13
- 239000005380 borophosphosilicate glass Substances 0.000 claims description 10
- 150000002500 ions Chemical class 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 description 16
- 239000007943 implant Substances 0.000 description 13
- 239000002184 metal Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000000976 ink Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000008021 deposition Effects 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000000927 vapour-phase epitaxy Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- -1 phosphorus ions Chemical class 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005389 semiconductor device fabrication Methods 0.000 description 2
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H01L31/18—
-
- H01L31/0352—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
- H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/725,628 US9530923B2 (en) | 2012-12-21 | 2012-12-21 | Ion implantation of dopants for forming spatially located diffusion regions of solar cells |
| US13/725,628 | 2012-12-21 | ||
| PCT/US2013/046820 WO2014098987A1 (en) | 2012-12-21 | 2013-06-20 | Ion implantation of dopants for forming spatially located diffusion regions of solar cells |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20150100741A KR20150100741A (ko) | 2015-09-02 |
| KR102055472B1 true KR102055472B1 (ko) | 2019-12-12 |
Family
ID=50973254
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020157018989A Active KR102055472B1 (ko) | 2012-12-21 | 2013-06-20 | 태양 전지의 공간적으로 위치된 확산 영역을 형성하기 위한 도펀트의 이온 주입 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9530923B2 (zh) |
| JP (1) | JP6224730B2 (zh) |
| KR (1) | KR102055472B1 (zh) |
| CN (1) | CN105074874B (zh) |
| DE (1) | DE112013006134T5 (zh) |
| MY (1) | MY172033A (zh) |
| TW (1) | TWI594448B (zh) |
| WO (1) | WO2014098987A1 (zh) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101622089B1 (ko) * | 2013-07-05 | 2016-05-18 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
| US20150349180A1 (en) * | 2014-05-30 | 2015-12-03 | David D. Smith | Relative dopant concentration levels in solar cells |
| DE102014109179B4 (de) * | 2014-07-01 | 2023-09-14 | Universität Konstanz | Verfahren zum Erzeugen von unterschiedlich dotierten Bereichen in einem Siliziumsubstrat, insbesondere für eine Solarzelle, und Solarzelle mit diesen unterschiedlich dotierten Bereichen |
| DE102014215893A1 (de) * | 2014-08-11 | 2016-02-11 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Erzeugen von Dotierbereichen in einer Halbleiterschicht eines Halbleiterbauelementes |
| US9559236B2 (en) * | 2014-09-24 | 2017-01-31 | Sunpower Corporation | Solar cell fabricated by simplified deposition process |
| NL2013608B1 (en) * | 2014-10-10 | 2016-10-04 | Univ Delft Tech | Self aligned low temperature process for solar cells. |
| US20160284913A1 (en) * | 2015-03-27 | 2016-09-29 | Staffan WESTERBERG | Solar cell emitter region fabrication using substrate-level ion implantation |
| CN106252458B (zh) | 2015-06-10 | 2017-12-12 | Lg电子株式会社 | 制造太阳能电池的方法 |
| KR101751727B1 (ko) * | 2015-06-10 | 2017-07-11 | 엘지전자 주식회사 | 태양 전지의 제조 방법 |
| US10629758B2 (en) * | 2016-09-30 | 2020-04-21 | Sunpower Corporation | Solar cells with differentiated P-type and N-type region architectures |
| JP7264674B2 (ja) * | 2019-03-13 | 2023-04-25 | 東洋アルミニウム株式会社 | バックコンタクト型太陽電池セルの製造方法 |
| JP7264673B2 (ja) * | 2019-03-13 | 2023-04-25 | 東洋アルミニウム株式会社 | バックコンタクト型太陽電池セルの製造方法 |
| CN112635592B (zh) * | 2020-12-23 | 2025-01-10 | 泰州隆基乐叶光伏科技有限公司 | 一种太阳能电池及其制作方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011512689A (ja) * | 2008-02-20 | 2011-04-21 | サンパワー コーポレイション | エミッタを有するフロントコンタクト型太陽電池 |
| JP2011513998A (ja) | 2008-03-05 | 2011-04-28 | ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド | 太陽電池のためのカウンタドーピング |
| JP2012511258A (ja) | 2008-12-04 | 2012-05-17 | サンパワー コーポレイション | ドープされたポリシリコン領域が形成されている裏面コンタクト型太陽電池 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5194397A (en) * | 1991-06-05 | 1993-03-16 | International Business Machines Corporation | Method for controlling interfacial oxide at a polycrystalline/monocrystalline silicon interface |
| JP2006310368A (ja) * | 2005-04-26 | 2006-11-09 | Shin Etsu Handotai Co Ltd | 太陽電池の製造方法及び太陽電池 |
| KR20080091102A (ko) | 2005-12-21 | 2008-10-09 | 선파워 코포레이션 | 배면 콘택트 태양 전지 구조 및 제조 공정 |
| JP5090716B2 (ja) * | 2006-11-24 | 2012-12-05 | 信越化学工業株式会社 | 単結晶シリコン太陽電池の製造方法 |
| CN102099870A (zh) * | 2008-06-11 | 2011-06-15 | 因特瓦克公司 | 用于在太阳能电池制作中使用的专用注入系统和方法 |
| SG174289A1 (en) * | 2009-03-20 | 2011-10-28 | Solar Implant Technologies Inc | Advanced high efficiency crystalline solar cell fabrication method |
| KR20120102590A (ko) * | 2009-12-18 | 2012-09-18 | 도레이 카부시키가이샤 | 반도체 디바이스의 제조 방법 및 이면 접합형 태양 전지 |
| US8735234B2 (en) * | 2010-02-18 | 2014-05-27 | Varian Semiconductor Equipment Associates, Inc. | Self-aligned ion implantation for IBC solar cells |
| US8377738B2 (en) * | 2010-07-01 | 2013-02-19 | Sunpower Corporation | Fabrication of solar cells with counter doping prevention |
| US8658458B2 (en) * | 2011-06-15 | 2014-02-25 | Varian Semiconductor Equipment Associates, Inc. | Patterned doping for polysilicon emitter solar cells |
| US8993373B2 (en) * | 2012-05-04 | 2015-03-31 | Varian Semiconductor Equipment Associates, Inc. | Doping pattern for point contact solar cells |
-
2012
- 2012-12-21 US US13/725,628 patent/US9530923B2/en active Active
-
2013
- 2013-06-20 WO PCT/US2013/046820 patent/WO2014098987A1/en active Application Filing
- 2013-06-20 DE DE112013006134.1T patent/DE112013006134T5/de active Pending
- 2013-06-20 TW TW102121925A patent/TWI594448B/zh active
- 2013-06-20 CN CN201380072147.5A patent/CN105074874B/zh active Active
- 2013-06-20 MY MYPI2015001579A patent/MY172033A/en unknown
- 2013-06-20 JP JP2015549362A patent/JP6224730B2/ja active Active
- 2013-06-20 KR KR1020157018989A patent/KR102055472B1/ko active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011512689A (ja) * | 2008-02-20 | 2011-04-21 | サンパワー コーポレイション | エミッタを有するフロントコンタクト型太陽電池 |
| JP2011513998A (ja) | 2008-03-05 | 2011-04-28 | ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド | 太陽電池のためのカウンタドーピング |
| JP2012511258A (ja) | 2008-12-04 | 2012-05-17 | サンパワー コーポレイション | ドープされたポリシリコン領域が形成されている裏面コンタクト型太陽電池 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6224730B2 (ja) | 2017-11-01 |
| US20140174515A1 (en) | 2014-06-26 |
| US9530923B2 (en) | 2016-12-27 |
| WO2014098987A1 (en) | 2014-06-26 |
| CN105074874A (zh) | 2015-11-18 |
| CN105074874B (zh) | 2017-12-01 |
| TW201427051A (zh) | 2014-07-01 |
| JP2016506627A (ja) | 2016-03-03 |
| TWI594448B (zh) | 2017-08-01 |
| MY172033A (en) | 2019-11-12 |
| DE112013006134T5 (de) | 2015-09-24 |
| KR20150100741A (ko) | 2015-09-02 |
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