KR102036681B1 - Compound, organic layer composition, and method of forming patterns - Google Patents

Abstract

상기 화학식 1에서,
A는 그 구조 내에 4개의 치환 또는 비치환된 벤젠 및 이중결합을 포함하는 2가의 기이고, B는 2가의 유기기이고, *는 연결지점이다.The present invention relates to a compound for an organic film composition represented by Formula 1, an organic film composition comprising the compound, and a pattern forming method.
[Formula 1]

In Chemical Formula 1,
A is a divalent group containing four substituted or unsubstituted benzenes and double bonds in its structure, B is a divalent organic group, and * is a linking point.

Description

Compound, organic film composition, and pattern forming method {COMPOUND, ORGANIC LAYER COMPOSITION, AND METHOD OF FORMING PATTERNS}

A novel compound, an organic film composition containing the compound, and a pattern forming method using the organic film composition.

In recent years, highly integrated designs due to miniaturization and complexity of electronic devices have accelerated the development of more advanced materials and related processes, and thus lithography using existing photoresists also requires new patterning materials and techniques. It became.

In the patterning process, in order to transfer the fine pattern of the photoresist to the substrate to a sufficient depth without collapse, an organic film called a hard mask layer may be formed.

The hard mask layer serves as an interlayer that transfers the fine pattern of the photoresist to the material layer through a selective etching process. Therefore, the hard mask layer needs to be etch resistant to withstand multiple etching processes.

On the other hand, recently, the hard mask layer has been proposed to be formed by spin-on coating (spin-on coating) instead of chemical vapor deposition.

Although the spin-on coating method has a simple advantage of the deposition process, the thin film formed by the spin-on coating method is generally lower in etch selectivity than the thin film formed by the chemical or physical deposition method.

One embodiment provides a compound for an organic film composition that has excellent etching resistance and can secure gap-fill and planarization characteristics.

Another embodiment provides an organic film composition that can be applied to a spin-on coating method and can produce a thin film having excellent etching resistance and planarization properties.

Another embodiment provides a pattern forming method using the organic film composition.

According to one embodiment, a compound including a structural unit represented by Formula 1 is provided.

[Formula 1]

[Formula 1]

In Chemical Formula 1,

A is a divalent group containing four substituted or unsubstituted benzenes and a double bond in its structure,

B is a divalent organic group,

* Is the connection point.

In Formula 1, A may include a substituted or unsubstituted tetraphenyl ethylene moiety.

In Formula 1, B may be represented by Formula 2 or 3 below.

[Formula 2]

In Chemical Formula 2,

Ar ¹ and Ar ² are each independently a substituted or unsubstituted benzene ring, or an aromatic ring in which 2 to 4 substituted or unsubstituted benzene rings are fused.

L is a single bond, a substituted or unsubstituted C1 to C6 alkylene group, a substituted or unsubstituted C6 to C20 arylene group, or a combination thereof,

* Is the connection point:

[Formula 3]

In Chemical Formula 3,

X is a substituted or unsubstituted C6 to C30 aromatic ring group,

X 'is hydrogen or a substituted or unsubstituted C6 to C30 aromatic ring group,

L is a single bond, a substituted or unsubstituted C1 to C6 alkylene group, a substituted or unsubstituted C6 to C20 arylene group, or a combination thereof,

* Is the connection point.

In Formula 2 Ar ¹ and Ar ² may be any one of a substituted or unsubstituted aromatic ring selected from Group 1, each independently.

[Group 1]

In Formula 1, B may be any one of substituted or unsubstituted divalent groups listed in Group 2 below.

[Group 2]

In Formula 3, X and X ′ may each independently be any one of a substituted or unsubstituted moiety selected from Group 3 below.

[Group 3]

The compound may have a weight average molecular weight of 1,000 to 200,000.

According to another embodiment, an organic film composition including the compound described above and a solvent is provided.

According to another embodiment, forming a material layer on a substrate, applying an organic film composition comprising a compound and a solvent described above on the material layer, heat treating the organic film composition to form a hard mask layer Forming a photoresist layer on the hard mask layer, forming a photoresist layer on the silicon containing thin film layer, exposing and developing the photoresist layer to form a photoresist pattern, and using the photoresist pattern. Thereby selectively removing the silicon-containing thin film layer and the hardmask layer, exposing a portion of the material layer, and etching the exposed portion of the material layer.

Applying the organic film composition may be performed by a spin-on coating method.

The method may further include forming a bottom anti-reflective layer BARC before forming the photoresist layer.

By using a novel compound as the organic film material, it is possible to provide an organic film having excellent etching selectivity while ensuring gap-fill characteristics and flatness.

1 is a flowchart illustrating a pattern forming method according to an embodiment;
2 is a reference diagram for explaining a method of evaluating planarization characteristics.

Hereinafter, embodiments of the present invention will be described in detail so that those skilled in the art can easily practice. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

Unless otherwise defined herein, 'substituted' means that a hydrogen atom in a compound is a halogen atom (F, Br, Cl, or I), a hydroxyl group, an alkoxy group, a nitro group, a cyano group, an amino group, an azido group, an amino group Dino group, hydrazino group, hydrazono group, carbonyl group, carbamyl group, thiol group, ester group, carboxyl group or salt thereof, sulfonic acid group or salt thereof, phosphoric acid or salt thereof, C1 to C20 alkyl group, C2 to C20 alkenyl group, C2 C20 to C20 alkynyl group, C6 to C30 aryl group, C7 to C30 arylalkyl group, C1 to C30 alkoxy group, C1 to C20 heteroalkyl group, C3 to C20 heteroarylalkyl group, C3 to C30 cycloalkyl group, C3 to C15 cycloalkenyl group, It means substituted with a substituent selected from C6 to C15 cycloalkynyl group, C3 to C30 heterocycloalkyl group and combinations thereof.

In addition, unless otherwise defined herein, "hetero" means containing 1 to 3 heteroatoms selected from N, O, S and P.

Also, unless otherwise defined herein, '*' refers to the point of attachment of a compound or compound moiety.

Hereinafter, a compound according to one embodiment is described.

Compound according to one embodiment includes a structural unit represented by the formula (1).

[Formula 1]

In Chemical Formula 1,

A is a divalent group containing four substituted or unsubstituted benzenes and a double bond in its structure,

B is a divalent organic group,

* Is the connection point.

For example, A may include a substituted or unsubstituted tetraphenyl ethylene moiety, which may be represented by the following formula (X).

 [Formula X]

In Formula X,

R ¹ to R ⁴ are each independently a hydroxyl group, a halogen group, a substituted or unsubstituted C1 to C10 alkoxy group, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted A C1 to C30 heteroalkyl group, a substituted or unsubstituted C2 to C30 heteroaryl group, or a combination thereof,

a to d are each independently an integer of 0 to 3;

In Formula X, at least one of a to d may be 1 or more, in which case R ¹ to R ⁴ may be a hydroxy group.

By adjusting the type and number of functional groups represented by the R ¹ to R ⁴ to further improve the solubility of the compound for the organic film composition to form a gap-fill gap-fill when formed by the spin-on coating method Characteristics and planarization characteristics can be secured.

The compound includes a tetraphenylethene moiety in its structural unit and can be used, for example, as an organic film (eg hardmask layer) material. The compound is basically excellent in corrosion resistance by including four benzene rings in the structure, it is possible to secure the flexibility of the molecule by having a structure in which the four benzene rings are connected to ethylene.

Meanwhile, in Chemical Formula 1, B is a divalent organic group containing at least one benzene ring and tertiary carbon or quaternary carbon in its structure.

In the present specification, 'tertiary carbon' is carbon in a form in which all three sites of four hydrogens bonded to carbon are substituted with a group other than hydrogen, and 'fourth carbon' is four of four hydrogens bonded to carbon. It is defined that all of the sites are carbon in a form substituted with a group other than hydrogen.

The compound is improved in solubility by containing tertiary carbon or quaternary carbon in the organic group represented by B, which is advantageous to apply to the spin-on coating method.

For example, B in Formula 1 may be represented by the following Formula 2 or 3, but is not limited thereto.

[Formula 2]

In Chemical Formula 2,

Ar ¹ and Ar ² are each independently a substituted or unsubstituted benzene ring, or an aromatic ring in which 2 to 4 substituted or unsubstituted benzene rings are fused.

L is a single bond, a substituted or unsubstituted C1 to C6 alkylene group, a substituted or unsubstituted C6 to C20 arylene group, or a combination thereof,

* Is the connection point:

[Formula 3]

In Chemical Formula 3,

X is a substituted or unsubstituted C6 to C30 aromatic ring group,

X 'is hydrogen or a substituted or unsubstituted C6 to C30 aromatic ring group,

L is a single bond, a substituted or unsubstituted C1 to C6 alkylene group, a substituted or unsubstituted C6 to C20 arylene group, or a combination thereof,

* Is the connection point.

For example, in Formula 2 Ar ¹ and Ar ² may be a one of a substituted or unsubstituted aromatic ring selected from Group 1, each independently, and the like.

[Group 1]

The position at which the aromatic rings listed in Group 1 are bonded to Formula 2 is not limited. In addition, the aromatic rings listed in Group 1 may be in an unsubstituted form, such as hydroxy groups, halogen groups, substituted or unsubstituted C1 to C10 alkoxy groups, substituted or unsubstituted C1 to C30 alkyl groups, substituted or unsubstituted It may be a form substituted by a C6 to C30 aryl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, or a substituted or unsubstituted C2 to C30 heteroaryl group.

For example, in Formula 1, B may be any one of substituted or unsubstituted divalent groups listed in Group 2, but is not limited thereto.

[Group 2]

The divalent groups listed in Group 2 above may be in unsubstituted form, such as hydroxy groups, halogen groups, substituted or unsubstituted C1 to C10 alkoxy groups, substituted or unsubstituted C1 to C30 alkyl groups, substituted or unsubstituted C6 To a C30 aryl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, or a substituted or unsubstituted C2 to C30 heteroaryl group.

For example, in Formula 3, X and X ′ may each independently be one of a substituted or unsubstituted aromatic ring selected from Group 3, but is not limited thereto.

[Group 3]

The position at which the aromatic ring groups listed in Group 3 are bonded to Formula 3 is not limited. In addition, the aromatic rings listed in Group 1 may be in an unsubstituted form, such as hydroxy groups, halogen groups, substituted or unsubstituted C1 to C10 alkoxy groups, substituted or unsubstituted C1 to C30 alkyl groups, substituted or unsubstituted It may be a form substituted by a C6 to C30 aryl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, or a substituted or unsubstituted C2 to C30 heteroaryl group.

The number of structural units represented by Formula 1 included in the compound is not limited, and for example, the compound may include heterogeneous structural units represented by Formula 1.

The compound may have a weight average molecular weight of about 1,000 to 200,000. More specifically, the compound may have a weight average molecular weight of about 1,500 to 20,000. By having a weight average molecular weight of the above range it can be optimized by adjusting the carbon content and the solubility in the solvent of the organic film composition (eg hard mask composition) containing the compound.

When the compound is used as an organic film material, it is possible to form a uniform thin film without formation of pin-holes and voids or deterioration in thickness distribution during the baking process, as well as when a step is present in the lower substrate (or film) or pattern It can provide excellent gap-fill and planarization properties when forming a. In addition, it can be easily removed by deionized water (DIW) after the etching process, it is possible to implement a flat film quality.

According to another embodiment, an organic film composition including the compound described above and a solvent is provided.

The solvent is not particularly limited as long as it has sufficient solubility or dispersibility in the compound, for example, propylene glycol, propylene glycol diacetate, methoxy propanediol, diethylene glycol, diethylene glycol butyl ether, tri (ethylene glycol) mono Methyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, cyclohexanone, ethyl lactate, gamma-butyrolactone, N, N-dimethylformamide, N, N-dimethylacetamide, methylpyrrolidone At least one selected from methylpyrrolidinone, acetylacetone and ethyl 3-ethoxypropionate.

The compound may be included in about 0.1 to 50% by weight, about 0.1 to 30% by weight, or about 0.1 to 15% by weight based on the total content of the organic film composition. By including the compound in the above range it is possible to control the thickness, surface roughness and degree of planarization of the organic film.

The organic film composition may further include additives such as a surfactant, a crosslinking agent, a thermal acid generator, and a plasticizer.

The surfactant may be, for example, alkylbenzenesulfonic acid salt, alkylpyridinium salt, polyethylene glycol, quaternary ammonium salt and the like, but is not limited thereto.

The crosslinking agent may be, for example, melamine type, substituted element type, or these polymer type. Preferably, a crosslinking agent having at least two crosslinking substituents, for example, methoxymethylated glycoryl, butoxymethylated glycoryl, methoxymethylated melamine, butoxymethylated melamine, methoxymethylated benzoguanamine, butoxy Compounds such as methylated benzoguanamine, methoxymethylated urea, butoxymethylated urea, methoxymethylated thiourea, or butoxymethylated thiourea can be used.

In addition, a crosslinking agent having high heat resistance may be used as the crosslinking agent. As a crosslinking agent with high heat resistance, the compound containing the bridge formation substituent which has an aromatic ring (for example, a benzene ring, a naphthalene ring) in a molecule | numerator can be used.

The thermal acid generator is for example an acidic compound such as p-toluenesulfonic acid, trifluoromethanesulfonic acid, pyridinium p-toluenesulfonic acid, salicylic acid, sulfosalicylic acid, citric acid, benzoic acid, hydroxybenzoic acid, naphthalenecarboxylic acid, and / or 2,4 , 4,6-tetrabromocyclohexadienone, benzointosylate, 2-nitrobenzyltosylate, and other alkyl sulfonic acid alkyl esters may be used, but is not limited thereto.

The additive may be included in an amount of about 0.001 to 40 parts by weight based on 100 parts by weight of the organic film composition. By including in the said range, solubility can be improved without changing the optical characteristic of an organic film composition.

According to another embodiment, an organic film prepared using the organic film composition described above is provided. The organic layer may be in the form of the above-described organic layer composition, for example, coated on a substrate and cured through a heat treatment process, and may include, for example, an organic thin film used in an electronic device such as a hard mask layer, a planarization layer, a sacrificial layer, a filler, and the like. Can be.

Hereinafter, a method of forming a pattern using the organic film composition described above will be described with reference to FIG. 1.

1 is a flowchart illustrating a pattern forming method according to an embodiment.

According to an embodiment, a method of forming a pattern includes forming a material layer on a substrate (S1), applying an organic film composition including the compound and a solvent on the material layer (S2), and heat treating the organic film composition. Forming a hard mask layer (S3), forming a silicon-containing thin film layer on the hard mask layer (S4), forming a photoresist layer on the silicon-containing thin film layer (S5), and exposing the photoresist layer. And developing to form a photoresist pattern (S6), selectively removing the silicon-containing thin film layer and the hard mask layer using the photoresist pattern and exposing a portion of the material layer (S7), and Etching (S8) the exposed portion of the material layer.

The substrate may be, for example, a silicon wafer, a glass substrate or a polymer substrate.

The material layer is a material to be finally patterned, and may be, for example, a metal layer such as aluminum or copper, a semiconductor layer such as silicon, or an insulating layer such as silicon oxide, silicon nitride, or the like. The material layer can be formed, for example, by chemical vapor deposition.

The organic film composition is as described above, and may be prepared in a solution form and applied by a spin-on coating method. At this time, the coating thickness of the organic film composition is not particularly limited, and for example, may be applied to a thickness of about 50 to 10,000Å.

The heat treatment of the organic film composition may be performed at, for example, about 10 seconds to about 1 hour at about 100 to 500 ° C.

The silicon-containing thin film layer may be formed of a material such as SiCN, SiOC, SiON, SiOCN, SiC, SiO, and / or SiN.

In addition, a bottom anti-reflective coating (BARC) may be further formed on the silicon-containing thin film layer before the forming of the photoresist layer.

Exposing the photoresist layer may be performed using, for example, ArF, KrF or EUV. In addition, a heat treatment process may be performed at about 100 to 500 ° C. after exposure.

Etching the exposed portion of the material layer may be performed by dry etching using an etching gas, which may use, for example, CHF ₃ , CF ₄ , Cl ₂ , BCl ₃ and mixtures thereof.

The etched material layer may be formed in a plurality of patterns, and the plurality of patterns may be a metal pattern, a semiconductor pattern, an insulation pattern, or the like, and may be applied in various patterns in a semiconductor integrated circuit device.

Through the following examples will be described in more detail the embodiment of the present invention. However, the following examples are merely for illustrative purposes and do not limit the scope of the present invention.

Synthesis Example

Synthesis Example  One

In a 500 mL two-necked round-bottomed flask equipped with a condenser, 33.2 g (0.10 mol) of tetraphenylethene, 18.0 g (0.10 mol) of 9-fluorenone, and 19.0 g of p-toluenesulfonic acid monohydrate 0.10 mol), and 62 g of 1,4-dioxane were added thereto, followed by stirring at 110 ° C. for 24 to 48 hours to carry out the polymerization reaction. The reaction was completed when the weight average molecular weight was 1,000 to 1,500. After completion of the polymerization reaction, the reaction was slowly cooled to room temperature, the reaction was diluted with 300 g of ethyl acetate, and washed 10 times with 300 g of distilled water. The organic layer was concentrated under reduced pressure, diluted again with 200 g of THF, and added dropwise to 1 kg of nucleic acid to obtain a precipitate. After precipitation, the precipitate was dissolved in 200 g of THF again, and slowly added dropwise to 1 kg of nucleic acid to obtain precipitation. Compounds containing a structural unit represented by Compound A (MW: 1,200) were obtained after filtration and drying.

[Formula A]

Synthesis Example  2

Except for using 4,4 ', 4' ', 4' ''-(Ethene-1,1,2,2-tetrayl) tetraphenol instead of tetraphenylethene and pyrene aldehyde instead of 9-fluorenone in Synthesis Example 1 The compound (MW: 1,400) containing the structural unit represented by following formula B was obtained using the method.

[Formula B]

Synthesis Example  3

Except for using 4,4 ', 4' ', 4' ''-(Ethene-1,1,2,2-tetrayl) tetraphenol instead of tetraphenylethene and 9-penanthrenecarbaldehyde instead of 9-fluorenone in Synthesis Example 1 Using the same method, a compound (MW: 1,400) including a structural unit represented by the following Chemical Formula C was obtained.

[Formula C]

Comparative Synthesis Example  One

Except for using pyrene instead of tetraphenylethene in Synthesis Example 1 using the same method to obtain a compound (MW: 1,300) containing a structural unit represented by the formula (D).

[Formula D]

Comparative Synthesis Example  2

Except for using indole instead of tetraphenylethene in Synthesis Example 1 using the same method to obtain a compound (MW: 1,500) containing a structural unit represented by the formula (E).

[Formula E]

Hard mask  Preparation of the composition

Example  One

3.0 g of the compound obtained in Synthesis Example 1 was dissolved in 17 g of propylene glycol monomethyl ether acetate (PGMEA), and then filtered through a 0.1 μm Teflon filter to prepare a hard mask composition.

Example  2

A hardmask composition was prepared in the same manner as in Example 1, except that the compound obtained in Synthesis Example 2 was used instead of the compound obtained in Synthesis Example 1.

Example  3

A hardmask composition was prepared in the same manner as in Example 1, except that the compound obtained in Synthesis Example 3 was used instead of the compound obtained in Synthesis Example 1.

Comparative example  One

A hardmask composition was prepared in the same manner as in Example 1, except that the compound obtained in Comparative Synthesis Example 1 was used instead of the compound obtained in Synthesis Example 1.

Comparative example  2

A hardmask composition was prepared in the same manner as in Example 1, except that the compound obtained in Comparative Synthesis Example 2 was used instead of the compound obtained in Synthesis Example 1.

Evaluation 1: gap-fill characteristics and planarization characteristics

The hard mask compositions according to Examples 1 to 3 and Comparative Examples 1 to 2 were spin-coated onto a silicon wafer by adjusting the mass ratio of the solvent to the solute to 7 to 93, and then, after the baking process, the cut surface was cut using V-SEM. Observed. Under the above conditions, the mask thickness on the bare wafer became about 1100 mm 3.

The gap-fill and planarization characteristics were determined by the presence of voids by observing the pattern cross section using an electron scanning microscope (SEM), and the planarization characteristics were represented by the value of (h ₁ -h ₂ ) in FIG. 2. Was measured. Referring to FIG. 2, h ₁ denotes an average value of the thicknesses of the thin film measured at three random spots on the substrate, and h ₂ is measured at three random spots on the substrate. It means the thickness of one thin film. Referring to FIG. 2, the planarization property is excellent as the difference between h ₁ and h ₂ is not large.

Void presence Step difference (nm) Example 1 none 79 Example 2 none 95 Example 3 none 83 Comparative Example 1 has exist 229 Comparative Example 2 none 224

Referring to Table 1, it can be seen that the thin film formed from the hard mask composition according to Examples 1 to 3 has a much smaller step value compared with the thin film formed from the hard mask composition according to Comparative Examples 1 to 2, from which planarization characteristics are obtained. It can be confirmed that this excellent. In addition, the thin film formed from the hard mask composition according to Examples 1 to 3 was not observed voids, it can be confirmed that the gap-fill characteristics are excellent from this.

Evaluation 2: Corrosion resistance

After spin-coating the hard mask composition according to Examples 1 to 3 and Comparative Examples 1 to 2 on a silicon wafer, and heat-treating at 400 ° C. on a hot plate for 2 minutes to form a thin film having a thickness of 4,000 μm, the thickness of the formed thin film was Measured. Subsequently, the thin film was dry etched for 100 seconds and 60 seconds using CHF ₃ / CF ₄ mixed gas and N ₂ / O ₂ mixed gas, respectively, and the thickness of the thin film was measured again. The bulk etch rate (BER) was calculated by the following equation 1 from the thickness and etching time of the thin film before and after dry etching.

[Calculation 1]

Bulk etch rate (BER) = (Initial thin film thickness-thin film thickness after etching) / etch time (시간 / s)

The results are shown in Table 2.

CF _x N ₂ / O ₂ Example 1 24.53 22.31 Example 2 24.42 21.17 Example 3 24.17 21.63 Comparative Example 1 26.02 25.58 Comparative Example 2 28.71 26.42

Referring to Table 2, the thin film formed from the hard mask composition according to Examples 1 to 3 has sufficient etching resistance to etching gas as compared to the thin film formed from the hard mask composition according to Comparative Examples 1 to 2, thereby improving bulk etch characteristics. can confirm.

Although preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concepts of the present invention defined in the following claims are also provided. It belongs to the scope of the invention.

Claims (17)

Compound for an organic film composition comprising a structural unit represented by the formula (1):
[Formula 1]

In Chemical Formula 1,
A is represented by the following formula (X),
B is represented by the following formula (2) or (3),
* Is the connection point:
[Formula X]

In Formula X,
R ¹ to R ⁴ are each independently a hydroxyl group, a halogen group, a substituted or unsubstituted C1 to C10 alkoxy group, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted A C1 to C30 heteroalkyl group, a substituted or unsubstituted C2 to C30 heteroaryl group, or a combination thereof,
a to d are each independently an integer of 0 to 3;
[Formula 2]

In Chemical Formula 2,
Ar ¹ and Ar ² are each independently a substituted or unsubstituted benzene ring, or an aromatic ring in which 2 to 4 substituted or unsubstituted benzene rings are fused.
L is a single bond, a substituted or unsubstituted C1 to C6 alkylene group, a substituted or unsubstituted C6 to C20 arylene group, or a combination thereof,
* Is the connection point:
[Formula 3]

In Chemical Formula 3,
X is a substituted or unsubstituted C6 to C30 aromatic ring group,
X 'is hydrogen or a substituted or unsubstituted C6 to C30 aromatic ring group,
L is a single bond, a substituted or unsubstituted C1 to C6 alkylene group, a substituted or unsubstituted C6 to C20 arylene group, or a combination thereof,
* Is the connection point. delete delete In claim 1,
In Formula 2, Ar ¹ and Ar ² are each independently any one of the substituted or unsubstituted aromatic ring selected from the group 1 compound for an organic film composition:
[Group 1]

In claim 1,
Formula 2 is a compound for an organic film composition is any one of the substituted or unsubstituted divalent groups listed in the following Group 2:
[Group 2]

In claim 1,
In Chemical Formula 3, X and X 'are each independently any one of a substituted or unsubstituted moiety selected from Group 3, a compound for an organic film composition:
[Group 3]

In claim 1,
A compound for an organic film composition having a weight average molecular weight of 1,000 to 200,000. A compound for an organic film composition comprising a structural unit represented by the formula (1), and
menstruum
Organic film composition comprising:
[Formula 1]

In Chemical Formula 1,
A is represented by the following formula (X),
B is represented by the following formula (2) or (3),
* Is the connection point:
[Formula X]

In Formula X,
R ¹ to R ⁴ are each independently a hydroxyl group, a halogen group, a substituted or unsubstituted C1 to C10 alkoxy group, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted A C1 to C30 heteroalkyl group, a substituted or unsubstituted C2 to C30 heteroaryl group, or a combination thereof,
a to d are each independently an integer of 0 to 3;
[Formula 2]

In Chemical Formula 2,
Ar ¹ and Ar ² are each independently a substituted or unsubstituted benzene ring, or an aromatic ring in which 2 to 4 substituted or unsubstituted benzene rings are fused.
L is a single bond, a substituted or unsubstituted C1 to C6 alkylene group, a substituted or unsubstituted C6 to C20 arylene group, or a combination thereof,
* Is the connection point:
[Formula 3]

In Chemical Formula 3,
X is a substituted or unsubstituted C6 to C30 aromatic ring group,
X 'is hydrogen or a substituted or unsubstituted C6 to C30 aromatic ring group,
L is a single bond, a substituted or unsubstituted C1 to C6 alkylene group, a substituted or unsubstituted C6 to C20 arylene group, or a combination thereof,
* Is the connection point. delete delete In claim 8,
In Chemical Formula 2, Ar ¹ and Ar ² are each independently any one of a substituted or unsubstituted aromatic ring selected from the group 1 below:
[Group 1]

In claim 8,
Formula 2 is any one of the substituted or unsubstituted divalent groups listed in Group 2 below:
[Group 2]

In claim 8,
In Formula 3, X and X 'are each independently any one of a substituted or unsubstituted moiety selected from the group 3 below:
[Group 3]

In claim 8,
An organic film composition having a weight average molecular weight of the compound for the organic film composition 1,000 to 200,000. Providing a layer of material over the substrate,
Applying an organic film composition according to any one of claims 8 and 11 on said material layer,
Heat treating the organic film composition to form a hard mask layer,
Forming a silicon-containing thin film layer on the hard mask layer,
Forming a photoresist layer on the silicon-containing thin film layer,
Exposing and developing the photoresist layer to form a photoresist pattern
Selectively removing the silicon-containing thin film layer and the hardmask layer using the photoresist pattern and exposing a portion of the material layer; and
Etching the exposed portion of the material layer
Pattern forming method comprising a. The method of claim 15,
Applying the organic film composition is a pattern formation method performed by a spin-on coating method. The method of claim 15,
And forming a bottom antireflective layer (BARC) before forming the photoresist layer.

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