KR102036554B1 - 유연 이층 열전소자 및 이의 제조방법 - Google Patents
유연 이층 열전소자 및 이의 제조방법 Download PDFInfo
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- KR102036554B1 KR102036554B1 KR1020170115895A KR20170115895A KR102036554B1 KR 102036554 B1 KR102036554 B1 KR 102036554B1 KR 1020170115895 A KR1020170115895 A KR 1020170115895A KR 20170115895 A KR20170115895 A KR 20170115895A KR 102036554 B1 KR102036554 B1 KR 102036554B1
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- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 238000000034 method Methods 0.000 title claims description 14
- 239000000463 material Substances 0.000 claims abstract description 205
- 239000010410 layer Substances 0.000 claims description 141
- 238000005452 bending Methods 0.000 claims description 13
- 230000008859 change Effects 0.000 claims description 13
- 239000000945 filler Substances 0.000 claims description 12
- 239000002356 single layer Substances 0.000 claims description 12
- 238000010030 laminating Methods 0.000 claims description 4
- 230000008901 benefit Effects 0.000 abstract description 14
- 230000002542 deteriorative effect Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 52
- 239000010949 copper Substances 0.000 description 12
- 239000004020 conductor Substances 0.000 description 10
- 239000002904 solvent Substances 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 9
- 230000001070 adhesive effect Effects 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 239000011230 binding agent Substances 0.000 description 8
- 229910052709 silver Inorganic materials 0.000 description 8
- 239000004332 silver Substances 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000002003 electrode paste Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 238000003475 lamination Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000007769 metal material Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000006260 foam Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 238000010248 power generation Methods 0.000 description 4
- 239000010948 rhodium Substances 0.000 description 4
- 239000011669 selenium Substances 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000013590 bulk material Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000005676 thermoelectric effect Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052723 transition metal Inorganic materials 0.000 description 3
- 150000003624 transition metals Chemical class 0.000 description 3
- 229910017944 Ag—Cu Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000005679 Peltier effect Effects 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 230000005678 Seebeck effect Effects 0.000 description 2
- 229910020935 Sn-Sb Inorganic materials 0.000 description 2
- 229910008757 Sn—Sb Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 2
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 2
- GVFOJDIFWSDNOY-UHFFFAOYSA-N antimony tin Chemical compound [Sn].[Sb] GVFOJDIFWSDNOY-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- PSFDQSOCUJVVGF-UHFFFAOYSA-N harman Chemical compound C12=CC=CC=C2NC2=C1C=CN=C2C PSFDQSOCUJVVGF-UHFFFAOYSA-N 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 239000012046 mixed solvent Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- 229910000969 tin-silver-copper Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229920005830 Polyurethane Foam Polymers 0.000 description 1
- 229920002323 Silicone foam Polymers 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000011496 polyurethane foam Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000013514 silicone foam Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- DDJAGKOCVFYQOV-UHFFFAOYSA-N tellanylideneantimony Chemical compound [Te]=[Sb] DDJAGKOCVFYQOV-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
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- H01L35/32—
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- H01L35/02—
-
- H01L35/12—
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- H01L35/34—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
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Abstract
제 1 열전물질층과 대향하며, 각 열전물질과 대응하는 N형 또는 P형 열전물질이 형성된 제 2 열전물질층; 및
상기 제 1 열전물질층 및 제 2 열전물질층 사이에 개재되며, 유연성을 가지는 유연 필름을 포함하는 유연 이층 열전소자에 관한 것으로, 본 발명에 의한 유연 이층 열전소자는 열전물질의 두께가 두꺼우면서도 유연성이 저하되지 않는 장점이 있다.
Description
도 2는 본 발명의 일 실시예에 의한 유연 이층 열전소자의 제조방법을 개략적을 도시한 도면이다.
도 3은 본 발명의 다른 일 실시예에 의한 유연 이층 열전소자의 제조방법을 개략적으로 도시한 도면이다.
도 4는 본 발명의 실시예 및 비교예에 의한 열전소자의 반복 벤딩에 의한 저항 변화를 도시한 도면이다.
실시예 1 | 비교예 1 | |||
Cu 전극 두께 | 70 ㎛/35 ㎛/35 ㎛/70 ㎛ | 35 ㎛/35 ㎛ | ||
ZT | 0.60 | 0.72 | ||
자연대류 | 강제대류 | 자연대류 | 강제대류 | |
Voc(mV) | 14.7 mV | 31.7 mV | 16.9 mV | 33.5 mV |
Power density (㎼/㎠) |
0.55 | 2.68 | 0.77 | 3.05 |
120 P형 열전물질
201, 202, 203, 204 전극
300 유연 필름
Claims (11)
- 서로 이격배열된, 하나 이상의 N형 열전물질 및 P형 열전물질을 포함하는 제 1 열전물질층;
제 1 열전물질층과 대향하며, 각 열전물질과 대응하는 N형 또는 P형 열전물질이 형성된 제 2 열전물질층;
상기 제 1 열전물질층 및 제 2 열전물질층 사이에 개재되며, 유연성을 가지는 유연 필름; 및
상기 제 1 열전물질층 및 제 2 열전물질층은 각각 N형 열전물질과 P형 열전물질을 전기적으로 연결하는 전극을 포함하며,
상기 전극은 각 열전물질 층에서 열전물질과 유연필름 사이에 개재된 내부전극 및 열전물질과 맞닿으며 외부로 노출된 외부전극을 포함하며, 내부전극: 외부전극의 두께 비는 1:2 내지 4이며,
하기 관계식 3을 만족하는 것인 유연 이층 열전소자.
[관계식 3]
(는 본 발명의 유연 이층 열전소자를 7.5 ㎜의 곡률로 800회 반복 벤딩한 후의 저항 변화율이며, 는 에 포함된 각 층의 열전물질의 높이를 합한 높이를 가지는 열전물질을 포함하는 단일층의 열전소자를 7.5 ㎜의 곡률로 800회 반복적으로 벤딩한 후의 저항 변화율이다.) - 삭제
- 제 1항에 있어서,
상기 유연 필름의 두께는 30 ㎛ 이하인 유연 이층 열전소자. - 삭제
- 삭제
- 제 1항에 있어서,
상기 유연 필름의 열전도도는 0.1 W/m·K 이상인 유연 이층 열전소자. - 제 1항에 있어서,
상기 제 1 열전물질층 또는 제 2 열전물질층은 P형 및 N형 열전물질 사이에 충진된 충진재를 포함하는 유연 이층 열전소자. - 삭제
- 서로 이격배열된 하나 이상의 N형 열전물질 및 P형 열전물질, 제 1 상부전극, 및 제 1 하부전극을 포함하는 제 1 열전물질층을 형성하는 단계;
서로 이격배열된 하나 이상의 N형 열전물질 및 P형 열전물질, 제 2 상부전극, 및 제 2 하부전극을 포함하는 제 2 열전물질층을 형성하는 단계; 및
상기 제1열전물질층 및 제2열전물질층 사이에 유연 필름을 개재하여 적층하며, 각 열전물질층에 포함된 열전물질이 구조적으로 대칭이 되도록 적층하는 단계;를 포함하며,
상기 하부전극은 각 열전물질 층에서 열전물질과 유연필름 사이에 개재되며, 상기 상부전극은 열전물질과 맞닿으며 외부로 노출된 것으로, 하부전극: 상부전극의 두께 비는 1:2 내지 4이며,
하기 관계식 3을 만족하는 것인 유연 이층 열전소자 제조방법.
[관계식 3]
(는 본 발명의 유연 이층 열전소자를 7.5 ㎜의 곡률로 800회 반복 벤딩한 후의 저항 변화율이며, 는 에 포함된 각 층의 열전물질의 높이를 합한 높이를 가지는 열전물질을 포함하는 단일층의 열전소자를 7.5 ㎜의 곡률로 800회 반복적으로 벤딩한 후의 저항 변화율이다.) - 제 10항의 제조방법으로 제조된 유연 이층 열전소자.
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