KR102007537B1 - 절연막 형성용 감광성 수지 조성물, 절연막 및 절연막의 형성 방법 - Google Patents
절연막 형성용 감광성 수지 조성물, 절연막 및 절연막의 형성 방법 Download PDFInfo
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- KR102007537B1 KR102007537B1 KR1020130033015A KR20130033015A KR102007537B1 KR 102007537 B1 KR102007537 B1 KR 102007537B1 KR 1020130033015 A KR1020130033015 A KR 1020130033015A KR 20130033015 A KR20130033015 A KR 20130033015A KR 102007537 B1 KR102007537 B1 KR 102007537B1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
- G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
- G03F7/202—Masking pattern being obtained by thermal means, e.g. laser ablation
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Optics & Photonics (AREA)
- Materials For Photolithography (AREA)
Abstract
(A) 알칼리 가용성 수지, (B) 광중합성 모노머 및 (C) 광중합 개시제를 포함하는 감광성 수지 조성물에 있어서, 특정 구조의 화합물을 배합하고, (A) 알칼리 가용성 수지로서 특정량의 에폭시기를 포함하는 불포화 화합물로부터 유래하는 구성 단위를 포함하는 수지를 이용한다.
Description
Claims (4)
- (A) 알칼리 가용성 수지, (B) 광중합성 모노머, (C) 광중합 개시제 및 (D) 하기 식 (1)로 나타내는 화합물을 함유하고,
상기 (A) 알칼리 가용성 수지가 에폭시기를 포함하는 불포화 화합물로부터 유래하는 구성 단위를 포함하는 공중합체이며,
상기 (A) 알칼리 가용성 수지에 있어서의, 상기 에폭시기를 포함하는 불포화 화합물로부터 유래하는 구성 단위의 비율이 20~60 질량%인 절연막 형성용 감광성 수지 조성물.
(식 중, R1 및 R2는 각각 독립적으로 수소 원자 또는 유기기를 나타낸다. 단, R1 및 R2 중 적어도 한쪽은 유기기를 나타낸다. R1 및 R2는 그것들이 결합해 환상 구조를 형성하고 있어도 되고, 헤테로 원자의 결합을 포함하고 있어도 된다. R3은 단결합을 나타낸다. R4 및 R5는 각각 독립적으로 수소 원자, 할로겐 원자, 수산기, 메르캅토기, 설피드기, 실릴기, 실라놀기, 니트로기, 니트로소기, 설피노기, 설포기, 설포네이트기, 포스피노기, 포스피닐기, 포스포노기, 포스포네이트기, 또는 유기기를 나타낸다. R6, R7, R8 및 R9는 각각 독립적으로 수소 원자, 할로겐 원자, 수산기, 메르캅토기, 설피드기, 실릴기, 실라놀기, 니트로기, 니트로소기, 설피노기, 설포기, 설포네이트기, 포스피노기, 포스피닐기, 포스포노기, 포스포네이트기, 아미노기, 암모니오기 또는 유기기를 나타낸다. 단, R6 및 R7이 수산기가 되는 경우는 없다. R6, R7, R8 및 R9는 이들의 2 이상이 결합해 환상 구조를 형성하고 있어도 되고, 헤테로 원자의 결합을 포함하고 있어도 된다. R10은 수소 원자 또는 유기기를 나타낸다.) - 청구항 1에 있어서,
상기 (C) 성분의 함유량의, 상기 (D) 성분의 함유량에 대한 몰 비율이 2.5/7.5 ~ 9.5/0.5인 절연막 형성용 감광성 수지 조성물. - 청구항 1 또는 청구항 2에 기재된 절연막 형성용 감광성 수지 조성물을 이용해 형성된 절연막.
- 청구항 1 또는 청구항 2에 기재된 절연막 형성용 감광성 수지 조성물을 기판 상에 도포하여 감광성 수지층을 형성하는 도포 공정과,
상기 감광성 수지층을 소정의 절연막의 패턴에 따라 노광하는 노광 공정과,
상기 노광된 감광성 수지층을 현상하여 절연막의 패턴을 형성하는 현상 공정을 포함하는 절연막의 형성 방법.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2012-075015 | 2012-03-28 | ||
JP2012075015 | 2012-03-28 | ||
JPJP-P-2012-174451 | 2012-08-06 | ||
JP2012174451A JP6022847B2 (ja) | 2012-03-28 | 2012-08-06 | 絶縁膜形成用感光性樹脂組成物、絶縁膜、及び絶縁膜の形成方法 |
Publications (2)
Publication Number | Publication Date |
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KR20130110103A KR20130110103A (ko) | 2013-10-08 |
KR102007537B1 true KR102007537B1 (ko) | 2019-08-05 |
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KR1020130033015A Active KR102007537B1 (ko) | 2012-03-28 | 2013-03-27 | 절연막 형성용 감광성 수지 조성물, 절연막 및 절연막의 형성 방법 |
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KR (1) | KR102007537B1 (ko) |
CN (1) | CN103365087B (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20240013372A (ko) | 2022-07-22 | 2024-01-30 | 주식회사 이엔에프테크놀로지 | 신규한 중합체 및 이를 포함하는 감광성 수지 조성물 |
KR20240025223A (ko) | 2022-08-18 | 2024-02-27 | 주식회사 이엔에프테크놀로지 | 신규한 중합체 및 이를 포함하는 감광성 수지 조성물 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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KR102235159B1 (ko) * | 2014-04-15 | 2021-04-05 | 롬엔드하스전자재료코리아유한회사 | 감광성 수지 조성물, 및 이를 이용한 절연막 및 전자소자 |
KR102311850B1 (ko) * | 2017-12-21 | 2021-10-12 | 동우 화인켐 주식회사 | 감광성 수지 조성물 및 이로부터 형성된 절연 패턴 |
KR20190087173A (ko) * | 2018-01-16 | 2019-07-24 | 동우 화인켐 주식회사 | 네가티브형 감광성 수지 조성물 |
Citations (3)
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US4367280A (en) | 1977-01-20 | 1983-01-04 | Fuji Photo Film Co., Ltd. | Photopolymerizable composition |
WO2010113813A1 (ja) | 2009-03-31 | 2010-10-07 | 大日本印刷株式会社 | 塩基発生剤、感光性樹脂組成物、当該感光性樹脂組成物からなるパターン形成用材料、当該感光性樹脂組成物を用いたパターン形成方法並びに物品 |
JP2011253110A (ja) | 2010-06-03 | 2011-12-15 | Jsr Corp | 感放射線性樹脂組成物、硬化膜、硬化膜の形成方法、及び表示素子 |
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JP5404028B2 (ja) * | 2008-12-25 | 2014-01-29 | 東京応化工業株式会社 | 被エッチング基体の製造方法 |
JP2011095635A (ja) * | 2009-10-30 | 2011-05-12 | Fujifilm Corp | 感活性光線性又は感放射線性樹脂組成物及びそれを用いたパターン形成方法 |
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CN103076716B (zh) * | 2011-10-05 | 2017-10-17 | 东京应化工业株式会社 | 树脂组合物、感光性树脂组合物、衬垫以及显示装置 |
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- 2013-03-25 CN CN201310097102.5A patent/CN103365087B/zh active Active
- 2013-03-27 KR KR1020130033015A patent/KR102007537B1/ko active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US4367280A (en) | 1977-01-20 | 1983-01-04 | Fuji Photo Film Co., Ltd. | Photopolymerizable composition |
WO2010113813A1 (ja) | 2009-03-31 | 2010-10-07 | 大日本印刷株式会社 | 塩基発生剤、感光性樹脂組成物、当該感光性樹脂組成物からなるパターン形成用材料、当該感光性樹脂組成物を用いたパターン形成方法並びに物品 |
JP2011253110A (ja) | 2010-06-03 | 2011-12-15 | Jsr Corp | 感放射線性樹脂組成物、硬化膜、硬化膜の形成方法、及び表示素子 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20240013372A (ko) | 2022-07-22 | 2024-01-30 | 주식회사 이엔에프테크놀로지 | 신규한 중합체 및 이를 포함하는 감광성 수지 조성물 |
KR20240025223A (ko) | 2022-08-18 | 2024-02-27 | 주식회사 이엔에프테크놀로지 | 신규한 중합체 및 이를 포함하는 감광성 수지 조성물 |
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Publication number | Publication date |
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KR20130110103A (ko) | 2013-10-08 |
CN103365087B (zh) | 2019-03-08 |
CN103365087A (zh) | 2013-10-23 |
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