KR101930030B1 - Organic light emitting diode display device and fabricating method of the same - Google Patents

Abstract

The present invention discloses an organic light emitting diode display device. An organic light emitting diode display device and a method of manufacturing the same according to the present invention include: an insulating substrate including a plurality of pixel regions; A thin film transistor formed on the insulating substrate; A flattening film formed on the thin film transistor; An organic light emitting diode formed on the planarization film; A bank pattern formed on the planarization film and defining a light emitting region and a non-light emitting region; A barrier formed on the planarization film and formed in the non-emission region; And a thin film encapsulation layer formed on the substrate on which the barrier ribs and the organic light emitting diode are formed and fixed by the barrier ribs. The barrier ribs are formed such that the upper end face thereof is larger and wider than the lower end face thereof.
The organic light emitting diode display device and the method of manufacturing the same according to the present invention can prevent peeling of a thin film sealing layer from a substrate by forming a partition wall in an inverted tapered shape or an undercut shape on a substrate, Reliability is improved by enhancing the adhesion between the thin film encapsulation layer and the substrate due to the larger and wider partition walls.

Description

[0001] The present invention relates to an organic light emitting diode (OLED) display device and a manufacturing method thereof.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting diode (OLED) display device, and more particularly, to an organic light emitting diode display device that prevents peeling of a substrate from a thin film encapsulation (TFE).

2. Description of the Related Art Recently, various flat panel display devices capable of reducing weight and volume, which are disadvantages of cathode ray tubes (CRTs), have been developed. Such a flat panel display device includes a liquid crystal display (LCD), a field emission display (FED), a plasma display panel (PDP) And a light emitting device (Electroluminescence Device).

PDP has attracted attention as a display device that is most advantageous for large screen size but small size because of its simple structure and manufacturing process, but it has disadvantage of low luminous efficiency, low luminance and high power consumption. Thin Film Transistor LCD (TFT LCD) is the most widely used flat panel display device, but has a narrow viewing angle and low response speed. The electroluminescence device is divided into an inorganic light emitting diode display device and an organic light emitting diode display device according to the material of the light emitting layer. Of these organic light emitting diode display devices, self light emitting devices are self light emitting devices, There is a big advantage. A basic structure of such an organic light emitting diode display device will be described with reference to FIGS. 1 and 2. FIG.

1 is a cross-sectional view of a conventional OLED display.

Referring to FIG. 1, a conventional organic light emitting diode display device is divided into a display area and a non-display area. The display area is divided into a plurality of pixel areas, and thin film transistors and organic light emitting diodes are formed in each pixel area.

Although not shown in the drawing, gate pads, data pads, power supply pads, and the like are formed.

A semiconductor layer 11 including a source region 11a, a channel region 11b and a drain region 11c, a gate insulating film 12, and a gate electrode (not shown) are formed in a region where a thin film transistor is formed on the insulating substrate 10 13, a source electrode 15 and a drain electrode 16 are formed. The source electrode 15 and the drain electrode 16 are electrically connected to the source region 15 of the semiconductor layer 11 through the interlayer insulating film 14 formed on the gate electrode 13 and the contact hole formed through the gate insulating film 12, (11a) and the drain region (11c).

A protective layer 17 is formed on the source electrode 15 and the drain electrode 16 and a contact hole is formed in the protective layer 17 to expose the drain electrode 16. The exposed drain electrode 16 is electrically connected to the connection electrode 18 formed on the passivation layer 17.

A planarization layer 19 is formed on the entire surface of the substrate 10 including the thin film transistor and a contact hole exposing the connection electrode 18 is formed on the planarization layer 19. The lower electrode 20 of the organic light emitting diode OLED is formed on the exposed connection electrode 18. A bank pattern 21 is formed on the lower electrode 20 to expose the lower electrode 20 in units of pixel regions and an organic light emitting layer 22 is formed on the exposed lower electrode 20 And an upper electrode 23 is formed on the organic light emitting layer 22. A thin film encapsulation (TFE) 24 is formed on the upper electrode 23 to protect and seal display elements from moisture, gas, and the like.

2 is a plan view of a conventional organic light emitting diode display.

Referring to FIG. 2, the thin film encapsulation layer 24 is formed on the substrate 10 including the periphery of the display region 30 including the thin film transistor and the organic light emitting diode. As shown in FIG. 1, the thin film encapsulation layer 24 formed on the organic light emitting diode has weak adhesion to the organic light emitting diode and is easily peeled off. Therefore, the substrate 10 and the thin-film encapsulation layer 24 are fixed by the adhesive force between the peripheral portion of the display region 30 and the thin-film encapsulation layer 24, but are easily peeled off as shown in FIG.

An object of the present invention is to provide an organic light emitting diode display device and a method of manufacturing the same that prevent peeling of a thin film encapsulation layer from a substrate by forming a partition wall in a reverse tapered shape or an undercut shape on a substrate.

Another object of the present invention is to provide an organic light emitting diode display device having improved reliability by enhancing adhesion between a thin film encapsulation layer and a substrate due to a partition wall having an upper end section larger than the lower end section and having a larger width.

According to an aspect of the present invention, there is provided an organic light emitting diode display comprising: an insulating substrate including a plurality of pixel regions; A thin film transistor formed on the insulating substrate; A flattening film formed on the thin film transistor; An organic light emitting diode formed on the planarization film; A bank pattern formed on the planarization film and defining a light emitting region and a non-light emitting region; A barrier formed on the planarization film and formed in the non-emission region; And a thin film encapsulation layer formed on the substrate on which the barrier ribs and the organic light emitting diode are formed and fixed by the barrier ribs. The barrier ribs are formed such that the upper end face thereof is larger and wider than the lower end face thereof.

According to another aspect of the present invention, there is provided a method of manufacturing an organic light emitting diode display, including: forming a thin film transistor on an insulating substrate including a plurality of pixel regions; Forming a planarization film on the thin film transistor; Forming an organic light emitting diode lower electrode on the planarization layer; Forming a barrier rib on the planarization film so as to be spaced apart from the lower electrode of the organic light emitting diode; Forming a bank pattern on the planarization film and exposing the barrier ribs and the lower electrode of the organic light emitting diode; Forming an organic light emitting layer and an organic light emitting diode upper electrode on the lower electrode of the organic light emitting diode to complete the organic light emitting diode; And forming a thin film sealing layer on the substrate on which the barrier ribs and the organic light emitting diode are formed and fixed by the barrier ribs, wherein the barrier ribs are formed such that the upper end face thereof is larger and wider than the lower end face thereof .

The organic light emitting diode display device and the method of manufacturing the same according to the present invention have a first effect of preventing the thin film sealing layer from peeling off from the substrate by forming partition walls in an inverted tapered shape or an undercut shape on the substrate.

In addition, the organic light emitting diode display device and the method of manufacturing the same according to the present invention have the second effect that the reliability of the organic light emitting diode display device is improved by enhancing the adhesion between the thin film sealing layer and the substrate due to the partition wall having the upper end section larger and wider than the lower end section.

1 is a cross-sectional view of a conventional OLED display.
2 is a plan view of a conventional organic light emitting diode display.
3A to 3G are views illustrating a method of manufacturing an organic light emitting diode display device according to a first embodiment of the present invention.
4A to 4D illustrate a method of manufacturing an organic light emitting diode display according to a second embodiment of the present invention.
5 is a view illustrating an organic light emitting diode display device according to a third embodiment of the present invention.
FIGS. 6A and 6B are graphs illustrating the results of experiments for peeling a thin sealing layer of a conventional organic light emitting diode display device and an organic light emitting diode display device of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The following embodiments are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the size and thickness of the device may be exaggerated for convenience. Like reference numerals designate like elements throughout the specification.

3A to 3G are views illustrating a method of manufacturing an organic light emitting diode display device according to a first embodiment of the present invention.

3A, the organic light emitting diode display of the present invention includes an insulating substrate 100 including a display region divided into a plurality of pixel regions and formed of glass, plastic, polyimide (PI), or the like, and an amorphous silicon Thereby forming a semiconductor layer such as a film. Although not shown in the figure, a buffer layer may be formed between the semiconductor layer 111 and the insulating substrate 100. The buffer layer may be formed as a single layer or a laminated structure using an insulating film such as a silicon oxide film or a silicon nitride film. The buffer layer may prevent diffusion of moisture or impurities generated in the substrate 100, , And serves to make the amorphous silicon layer crystallize well.

A photoresist is formed on the semiconductor layer, and a photoresist pattern is formed by performing exposure and development using a mask including a transmission portion and a blocking portion. The semiconductor layer is etched using the photoresist pattern as a mask to form a semiconductor layer 111 of the thin film transistor. A gate insulating layer 112 is formed on the entire surface of the substrate 100 including the semiconductor layer 111 and a gate metal layer is formed on the gate insulating layer 112. A photoresist is formed on the gate metal layer, a photoresist pattern is formed by performing exposure and development using a mask including a transmission portion and a blocking portion, and a gate metal layer is etched using the mask as a mask to form a gate electrode 113 do. The gate electrode 113 may be formed of a metal such as molybdenum (Mo), titanium (Ti), tantalum (Ta), tungsten (W), copper (Cu), chromium (Cr), aluminum It may be formed by laminating at least one of ITO, IZO and ITZO which are transparent conductive materials. Although the gate electrode 113 is formed of a single metal layer in the figure, it is not fixed and can be formed by stacking two or more metal layers.

Using the gate electrode 113 as a mask, a high concentration impurity ion is doped to form a source region 111a and a drain region 111c. Prior to the formation of the source region 111a and the drain region 111c, a low concentration impurity ion is doped so as to reduce the electric current which is not shown in the drawing but which is caused by the resistance, An LDD (Lightly Doped Drain) doping layer may be formed in the source region 111a and the drain region 111c of the semiconductor layer 111. [ Although not shown in the drawings, the unillustrated 111b is a channel region.

The impurity ions may be formed of n-type impurity ions using phosphorus (P) or the like, or p-type impurity ions using boron (B) or the like.

Referring to FIG. 3B, an interlayer insulating layer 114 is formed on the entire surface of the substrate on which the gate electrode 113 is formed. A photoresist is formed on the interlayer insulating film 114 and a photoresist pattern is formed by an exposure and a development process using a mask composed of a transmission portion and a blocking portion. The interlayer insulating layer 114 and the gate insulating layer 112 are etched using the photoresist pattern as a mask to form a contact hole exposing the source region 111a and the drain region 111c of the semiconductor layer 111 . A source / drain metal layer is formed on the entire surface of the substrate 100 including the interlayer insulating layer 114 on which the contact holes are formed, and a photoresist pattern is formed by an exposure and development process using a mask including a transparent portion and a blocking portion. The source / drain metal layer is etched using the photoresist pattern as a mask to form a source electrode 115 and a drain electrode 116. [ The source electrode 115 is formed on the source region 111a of the semiconductor layer 111 through the contact hole and the drain electrode 116 is electrically connected to the drain region of the semiconductor layer 111 through the contact hole. (111c).

The source electrode and the drain electrode may be formed of an alloy of molybdenum (Mo), titanium (Ti), tantalum (Ta), tungsten (W), copper (Cu), chromium (Cr), aluminum (Al) It can be formed using any one of them. In addition, a transparent conductive material such as indium tin oxide (ITO) may be used. In the drawings, a single metal layer is formed, but in some cases, at least two or more metal layers may be stacked.

Referring to FIG. 3C, a protective layer 117 is formed on the entire surface of the substrate 100 having the source electrode 115 and the drain electrode 116 formed thereon, and a photoresist is formed on the protective layer 117. A photoresist pattern is formed through an exposure and development process using a mask composed of a transmissive portion and a blocking portion, and a protective layer 117 is etched using the photoresist pattern as a mask to form a contact hole exposing the drain electrode 116 . A metal layer is formed on the protective layer 117 on which the contact holes are formed. A photoresist pattern is formed through an exposure and development process using a mask composed of a transmissive portion and a blocking portion and etching is performed on the metal layer using the photoresist pattern as a mask to form a connection Electrode 118 is formed.

A planarization layer 119 is formed on the connection electrode 118 and a photoresist is formed on the planarization layer 119. A photoresist pattern is formed in the exposure and development process using a mask composed of a transmission portion and a blocking portion And a contact hole for exposing the connection electrode 118 is formed in the planarization layer 119 by etching using the photoresist pattern as a mask. An organic light emitting diode lower electrode 120 is formed on the exposed connection electrode 118 by a photoresist process using a mask including a transmissive portion and a blocking portion.

Referring to FIG. 3D, a negative photo resist, which is a photosensitive material, is formed on the planarization film 119. At this time, the negative photoresist is a photosensitive material which is cured when light is irradiated. Then, the negative photoresist is irradiated with light by placing a mask made of blocking portions and transparent portions. Thereafter, an ashing process is performed to form a reverse tapered barrier rib 150 between the pixel region and adjacent pixel regions on the planarization layer 119.

Referring to FIG. 3E, a positive photo resist, which is a photosensitive material, is formed on the substrate 100 on which the inversely tapered barrier rib 150 is formed. At this time, the positive photoresist is a photosensitive material which is softened when light is irradiated. On the positive photoresist, a mask composed of a blocking portion and a transparent portion is put on and irradiated with light. After the ashing process, a bank pattern 121 is formed on the planarization layer 119 to expose the reverse tapered barrier ribs 150 and the organic light emitting diode lower electrode 120. .

The bank pattern 121 defines a light emitting region and a non-light emitting region of the pixel region. The region where the organic light emitting diode is exposed is a light emitting region, and the other region is classified as a non-light emitting region.

Although the bank patterns 121 are formed in the reverse tapered shape on the drawing, the bank patterns 121 may be formed first, and the bank 150 may be formed.

Referring to FIG. 3F, the organic light emitting layer 122 and the organic light emitting diode upper electrode 123 are formed on the bank pattern 121 and the exposed organic light emitting diode upper electrode 120.

The organic light emitting layer 122 may include a hole injection layer, a hole transporting layer, a hole transporting layer, a light emitting material layer, A light emitting layer, an emitting material layer, an electron transporting layer, and an electron injection layer.

The organic light emitting diode may be driven by a top emission method in which light emitted from the organic light emitting layer 122 is emitted toward the upper electrode 123. When a predetermined voltage is applied to the lower electrode 120 and the upper electrode 123 according to a selected color signal, the organic light emitting diode receives holes supplied from the lower electrode 120 and electrons injected from the upper electrode 123 And is transported to the organic light emitting layer 122 to form an exciton. When the exciton transitions from the excited state to the ground state, light is generated and emitted in the form of a visible light ray. The emitted light passes through the transparent upper electrode 123 and exits to the outside. At this time, the upper electrode 123 may be formed by depositing a thick transparent conductive material on a semitransparent metal film thinly deposited with a metal material having a low work function.

Referring to FIG. 3G, a thin film encapsulation (TFE) 124 is formed in a region including a display region of the substrate 100 on which the organic light emitting diode is formed. The thin film encapsulation layer 124 encapsulates the display elements to protect them from moisture, gas, and the like. The thin film encapsulation layer 124 and the substrate 100 are strengthened in adhesion strength by the partition walls 150 formed in an inverted tapered shape and can prevent peeling.

In the conventional barrier rib structure, the width of the lower region in contact with the planarizing film is wider than the upper region, and the thin film encapsulating layer 124 can be easily peeled off from the substrate 100. However, since the barrier rib 150 according to the present invention is formed in a reverse tapered structure having a narrow width at the lower side in contact with the planarizing film and a wide width at the upper side, it is possible to prevent the thin film encapsulation layer 124 from being separated I can do it. When the barrier ribs 150 and the bank patterns 121 are spaced apart from each other, grooves having a wide width in the lower region are formed between the barrier ribs 150 and the bank patterns 121. The thin film encapsulation layer 124 may be formed on the substrate including the grooves and fixed by the grooves.

This improves the reliability of the organic light emitting diode display of the present invention.

4A and 4B illustrate a method of manufacturing an organic light emitting diode display according to a second embodiment of the present invention.

Since all the elements other than the barrier rib and the bank pattern structure are the same as those of the first embodiment described above, the same reference numerals are given to the same elements as those of the first embodiment, and only the barrier ribs and the bank pattern structure, And other reference numerals are given.

The OLED display according to the second embodiment of the present invention is characterized in that the barrier ribs have a double layer structure of the sacrificial pattern 250 and the bank pattern 221. [

Referring to FIG. 4A, a sacrificial layer is formed on a substrate 100 having an organic light emitting diode lower electrode 120 formed thereon. A photoresist is formed on the sacrificial layer, and a photoresist pattern is formed by an exposure and a development process using a mask including a transmission portion and a blocking portion. A sacrificial pattern 250 is formed on the planarization film 119 between the pixel region and the neighboring pixel region using the photoresist pattern as a mask.

Referring to FIG. 4B, a positive photo resist, which is a photosensitive material, is formed on the substrate 100 on which the sacrificial pattern 250 is formed and on the sacrificial pattern 250. At this time, the positive photoresist is a photosensitive material which is softened when light is irradiated. A mask made of a blocking portion and a transparent portion is placed on the positive photoresist, and light is irradiated to a peripheral portion of the sacrificial pattern 250 and a partial region of the lower electrode 120. Thereafter, an ashing process is performed to form a bank pattern 221 formed to expose a side surface of the sacrificial pattern 250 and the organic light emitting diode lower electrode 120.

Referring to FIG. 4C, the exposed sacrificial pattern 250 is wet-etched using the bank pattern 221 as a mask. In this case, due to the isotropic characteristic of the wet etching, the sacrificial pattern 250 is etched more because the bank pattern 221 and the sacrificial pattern 250 have a large etch selectivity for wet etching, A barrier rib having an undercut structure in which the pattern 221 is formed to be larger than the sacrifice pattern 250 as a lower layer can be formed. Thus, a partition wall having an upper end face larger than the lower end face, similar to the reverse tapered shape, can be formed between the pixel region and the pixel region on the planarization film 119.

The bank pattern 221 defines a light emitting region and a non-light emitting region of the pixel region. The region where the organic light emitting diode is exposed is a light emitting region, and the other region is classified as a non-light emitting region.

Referring to FIG. 4D, an organic light emitting layer 122 and an organic light emitting diode upper electrode 123 are formed on the bank pattern 221 and the exposed organic light emitting diode upper electrode 120. The organic light emitting layer 122 may include a hole injection layer, a hole transporting layer, a hole transporting layer, a light emitting material layer, A light emitting layer, an emitting material layer, an electron transporting layer, and an electron injection layer.

A thin film encapsulation (TFE) 124 is formed in a region including the display region of the substrate 100 on which the organic light emitting diode is formed. The thin film encapsulation layer 124 is formed by sealing the display elements to protect them from moisture, gas, and the like. The partition walls formed by the double layer of the sacrificial pattern 250 and the bank pattern 221 in the undercut form strengthen the adhesive force, .

In the conventional barrier rib structure, the width of the lower region contacting the planarization layer is wider than the upper region, and the barrier rib 124 of the present invention is easily peeled off from the substrate 100, Since the bank layer 250 is formed in an undercut shape having a width smaller than that of the upper bank pattern 221 and an upper layer having a width larger than that of the lower layer, separation of the thin film encapsulation layer 124 is prevented.

When the bank pattern 221 and the bank formed in the undercut shape are spaced apart from each other, a groove having a wide width in the lower region is formed between the bank and the bank pattern 221. The thin film encapsulation layer 124 may be formed on the substrate including the grooves and fixed by the grooves.

This improves the reliability of the organic light emitting diode display of the present invention.

5 is a view illustrating an organic light emitting diode display device according to a third embodiment of the present invention.

Since all the elements except the bank pattern structure are the same as those of the first embodiment described above, the same constituent elements are given the same reference numerals as in the first embodiment, and only the bank pattern structure having the differentiating points is denoted by the same reference numerals as those of the first embodiment Respectively.

The most characteristic feature of the organic light emitting diode display device according to the third embodiment of the present invention is that the bank pattern 321 is formed in a concavo-convex structure.

Referring to FIG. 5, a positive photo resist, which is a photosensitive material, is formed on the substrate 100 on which the inversely tapered barrier rib 150 is formed. At this time, the positive photoresist is a photosensitive material which is softened when light is irradiated.

Then, a halftone mask composed of blocking portions, transmissive portions and transflective portions is placed on the positive photoresist, and light is irradiated. The halftone mask may be formed as a diffraction mask.

The transflective portion transmits light as it is, and the transflective portion uses a semi-transparent material having a different transmittance to pass less light than the transmissive portion, and the blocking portion completely blocks the light.

Accordingly, the region where the barrier rib 150 is formed and the region where the organic light emitting diode lower electrode 120 is exposed are opposed to the transmissive portion of the halftone mask, the positive photoresist is irradiated and softened by light, and a bank pattern is formed The mask is alternately formed such that the transflective portion and the blocking portion are formed alternately. Thereafter, ashing process is performed, the reverse tapered barrier ribs 150 and the organic light emitting diode lower electrode 120 are exposed on the planarization layer 119, and the recessed / A pattern 321 is formed. The step of forming the bank patterns 321 is performed by forming the bank patterns 321 in the reverse tapered shape and forming the bank 150. [

The organic light emitting layer 122 and the organic light emitting diode upper electrode 123 are formed on the bank pattern 321 and the exposed organic light emitting diode upper electrode 120. The organic light emitting layer 122 may include a hole injection layer, a hole transporting layer, a hole transporting layer, a light emitting material layer, A light emitting layer, an emitting material layer, an electron transporting layer, and an electron injection layer.

A thin film encapsulation (TFE) 124 is formed in a region including the display region of the substrate 100 on which the organic light emitting diode is formed. The thin film encapsulation layer 124 encapsulates the display elements to protect them from moisture, gas and the like, and the adhesion strength is enhanced by the partition walls formed in the reverse tapered shape. In the third embodiment of the present invention, not only the barrier ribs 150 having a narrow width in the lower side in contact with the flattening film and a wide width in the upper side, but also the bank patterns 321, The contact surface between the layer 124 and the bank pattern 321 is increased to further enhance the adhesive force. Thus, peeling of the thin film sealing layer 124 is prevented, and an organic light emitting diode display device having improved reliability can be formed.

FIGS. 6A and 6B are graphs illustrating the results of experiments for peeling a thin sealing layer of a conventional organic light emitting diode display device and an organic light emitting diode display device of the present invention.

Referring to FIG. 6A, in the conventional organic light emitting diode display device, although the thin film encapsulation layer is formed by using evaporation after formation of the organic light emitting diode, the adhesion between the thin encapsulation layer and the organic light emitting diode is weak, resulting in peeling and peeling. As a result, the organic light emitting diode and other display devices are not sealed from moisture, gas, and the like, and the reliability of the panel is deteriorated.

Referring to FIG. 6B, the organic light emitting diode display device of the present invention includes a substrate and a thin-film encapsulation layer which support the substrate and the thin-film encapsulation layer such that a cross-section of an upper portion of the reverse- Is strengthened to prevent peeling and peeling.

Therefore, the organic light emitting diode display device and the method of manufacturing the same according to the present invention can prevent separation of the thin film encapsulation layer and the substrate by forming a barrier in an inverted tapered shape or an under-cut shape on the substrate, Reliability is improved by enhancing the adhesion of the substrate.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be defined by the claims.

100: insulating substrate 111: semiconductor layer
112: gate insulating film 113: gate electrode
114: interlayer insulating film 115: source electrode
116: drain electrode 117: protective layer
118: connection electrode 119: planarization film
120: lower electrode 121, 221, 321: bank pattern
122: organic light emitting layer 123: upper electrode
124: Thin film sealing layer 150:
250: Sacrificial pattern

Claims (19)

An insulating substrate including a plurality of pixel regions;
A thin film transistor formed on the insulating substrate;
A flattening film formed on the thin film transistor;
An organic light emitting diode formed on the planarization film;
A bank pattern formed on the planarization film and defining a light emitting region and a non-light emitting region;
A barrier rib formed on the planarization layer in the same layer as the bank pattern and spaced apart from the bank pattern and the organic light emitting diode in the non-emission region;
And a thin film encapsulation layer formed on the insulating substrate on which the barrier ribs and the organic light emitting diodes are formed and fixed by the barrier ribs,
Wherein the thin film encapsulation layer is fixed by grooves between the partition walls spaced from each other and the bank pattern,
Wherein the barrier ribs are formed such that the upper end face thereof is larger and wider than the lower end face thereof.
The method according to claim 1,
Wherein the barrier ribs are formed in an inverted tapered shape.
3. The method of claim 2,
Wherein the reverse tapered barrier rib is formed of a negative photoresist.
The method according to claim 1,
Wherein the barrier ribs are formed as a double layer of a lower layer and an upper layer in an undercut shape.
5. The method of claim 4,
And an upper layer of the barrier rib is formed of a positive photoresist.
5. The method of claim 4,
And an upper layer of the barrier ribs are formed in the same layer with the same material as the bank pattern.
The method according to claim 1,
The bank pattern is formed in a concavo-convex structure,
Wherein the thin film encapsulation layer is fixed by the bank pattern and the barrier rib.
The method according to claim 1,
The thin film transistor and the organic light emitting diode are formed in the pixel region,
Wherein the barrier ribs are formed between adjacent pixel regions.
delete Forming a thin film transistor on an insulating substrate including a plurality of pixel regions;
Forming a planarization film on the thin film transistor;
Forming an organic light emitting diode lower electrode on the planarization layer;
Forming a barrier rib on the planarization film so as to be spaced apart from the lower electrode of the organic light emitting diode;
Forming a bank pattern on the planarization layer in the same layer as the partition, exposing the lower electrode of the organic light emitting diode, and forming a bank pattern to be spaced apart from the partition;
Forming an organic light emitting layer and an organic light emitting diode upper electrode on the lower electrode of the organic light emitting diode to complete the organic light emitting diode;
And forming a thin-film encapsulation layer on the insulating substrate on which the organic light-emitting diode is formed, the encapsulation layer being fixed by the partition,
Wherein the thin film encapsulation layer is fixed by grooves between the partition walls spaced from each other and the bank pattern,
Wherein the barrier ribs are formed such that an upper end face thereof is larger and wider than a lower end face thereof.
11. The method of claim 10,
Wherein the barrier ribs are formed in an inverted tapered shape.
12. The method of claim 11,
Wherein forming the reverse tapered barrier ribs comprises:
Forming a negative photoresist;
Irradiating the barrier rib forming region with light using a mask including a transmitting portion and a blocking portion;
And completing the barrier through the development process. ≪ RTI ID = 0.0 > 21. < / RTI >
11. The method of claim 10,
Wherein the barrier ribs are formed as a double layer of a lower layer and an upper layer in an undercut shape.
14. The method of claim 13,
The step of forming the barrier ribs,
Forming a sacrificial layer on the planarization layer;
Forming a sacrificial pattern, which is a lower layer, in a region where the barrier rib is formed by a photoresist process;
Forming a positive photoresist on the substrate including the sacrificial pattern;
Irradiating a peripheral portion of the sacrificial pattern with light using a mask including a transmitting portion and a blocking portion;
Exposing a side of the sacrificial pattern through a development process and forming an upper layer formed of a positive photoresist;
Wherein the lower layer is etched more than the upper layer through an etching process to complete the barrier ribs in an undercut-shaped double layer.
15. The method of claim 14,
Wherein the step of forming the upper layer of the barrier ribs is performed in the same step together with the step of forming the bank pattern.
11. The method of claim 10,
Wherein the bank pattern is formed in a concavo-convex structure.
11. The method of claim 10,
The thin film transistor and the organic light emitting diode are formed in the pixel region,
Wherein the barrier ribs are formed between adjacent pixel regions. ≪ RTI ID = 0.0 > 31. < / RTI >



The method according to claim 1,
Wherein the thin film encapsulation layer is in contact with a side surface of the barrier rib exposed by the groove and a part of a top surface of the planarization film.
11. The method of claim 10,
Wherein forming the bank pattern to be spaced apart from the barrier rib includes:
Forming a positive photoresist on the insulating substrate on which the barrier rib is formed;
Irradiating light to a region overlapping the peripheral portion of the barrier rib and the lower electrode of the organic light emitting diode using a mask including a blocking portion and a transmissive portion; And
And completing the bank pattern exposing the groove and the lower electrode of the organic light emitting diode which expose a side surface of the partition and an upper surface portion of the planarization film through an ashing process,
Wherein the thin film encapsulation layer is in contact with a side surface of the barrier rib exposed by the groove and a part of a top surface of the planarization film.

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