KR101926251B1 - Led panel and method for manufacturing the same - Google Patents

Abstract

An object of the present invention is to provide an LED panel in which an LED chip is provided in a trench structure formed in a substrate and an additional trench structure is formed in an insulation layer provided on the trench structure to form wiring, and a manufacturing method thereof. To this end, the present invention provides a semiconductor device comprising: a substrate on which a trench of a predetermined size is formed; A bonding material installed on the trench to fix the LED chip; An LED chip fixed to the trench through a bonding material and outputting light having a predetermined wavelength; An insulating layer having an insulating layer trench having a predetermined size to expose a part of the LED chip so that the LED chip and the trench are sealed; And a wiring layer electrically connected to the electrode pads of the LED chip exposed by the insulation layer trench to form a circuit pattern on the insulation layer. Therefore, the present invention can improve the manufacturing process by providing the LED chip in the trench structure formed on the substrate and forming the additional trench structure in the insulating layer provided thereon to form the wiring, and even if the LED chip having a small size is used There is an advantage that the wiring layer can be easily processed.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an LED panel,

The present invention relates to an LED panel and a manufacturing method thereof, and more particularly, to an LED panel and an LED panel in which an LED chip is provided in a trench structure formed on a substrate and an additional trench structure is formed on the insulation layer, And a method for producing the same.

Recently, LED (Light Emitting Diode) has been applied to various fields such as a key pad, a back light, a traffic light, an illumination light, and the like.

As the application fields of LEDs are diversified, the importance of packaging technology is becoming more important.

In the conventional LED package, first and second lead frames are disposed inside the package body, an LED chip is mounted on the first lead frame, and the LED chip and the first and second lead frames are connected to a wire .

In this case, since the heat radiation capability of the lead frame is low, it is difficult to apply it to high output LED packaging.

On the other hand, a method using a heat-dissipating substrate made of a metal material or a ceramic material is utilized as a substrate on which LEDs are mounted so as to increase the heat dissipation efficiency of the LED and to achieve high output, and the heat radiation efficiency through the heat dissipating plate is improved, .

Such an LED package structure is disclosed in Korean Registered Patent Publication No. 10-1004929.

However, in the LED package according to the related art, since the electrical connection with the circuit board for supplying electric power to the LED is connected by the wire, the outer diameter of the wire must be increased in accordance with the current carrying capacity required when the supply power is increased. However, Conventional wire bonding equipment constructed to be able to bond only wires has a problem that wire bonding of a large diameter can not be performed, which is difficult to apply to large-capacity LED packaging.

In addition, the Korean Registered Patent Publication No. 10-1519110 (entitled "Light Emitting Diode Package and Method of Manufacturing the Same") discloses a light emitting diode package in which a large capacity light emitting diode can be easily connected electrically, Emitting diode package and a method of manufacturing the same.

FIG. 1 is a cross-sectional view showing the structure of an LED package according to the prior art. The LED package 10 includes a heat sink 11, an LED chip 13 on a top of the heat sink 11 through a bonding layer 12, A circuit board 14 on which a pattern 14a is formed is bonded and a dam 15 for forming a receiving space is formed on the circuit board 15. The inside of the dam 15 is filled with a sealing material 16 A plurality of electrodes 13a are provided on the LED chip 13 and a phosphor 13b for wavelength conversion is provided on the LED chip 13.

The LED package 10 according to the related art has a via hole 17 extending from the top surface of the sealing material 16 to the electrode 13a to form a vertical wiring for electrically connecting the electrode 13a and the circuit pattern 14a, And the processed via hole 17 is filled with a conductive material to form a vertical wiring connecting the electrode 13a and the wiring layer 18. [

However, the conventional LED package has the following problems.

As the size of the LED chip becomes smaller, the size of the via hole 17 must be reduced to form a vertical wiring connecting the electrode 130a and the wiring layer 18, which makes it difficult to process the via hole 17.

In addition, the filler to be filled in the via hole 17 for forming the vertical interconnection includes a conductive material for electrical conduction. If the viscosity is lowered for inserting into the narrow via hole 17, the electrical connection can not be made There is a problem that defects such as disconnection are issued.

In addition, the conventional LED package includes two substrates, that is, a substrate on which the LED chip is mounted and a substrate on which the wiring is mounted, thereby increasing the overall thickness of the LED package.

Literature 1. Korean Patent Registration No. 10-1004929 Document 2: Korean Patent Registration No. 10-1519110

In order to solve these problems, the present invention provides an LED panel in which an LED chip is provided in a trench structure formed on a substrate, and an additional trench structure is formed in an insulation layer provided on the trench structure, .

According to an aspect of the present invention, there is provided a semiconductor device comprising: a substrate on which a trench of a predetermined size is formed; A bonding material installed on the trench to fix the LED chip; An LED chip fixed to the trench through a bonding material and outputting light having a predetermined wavelength; An insulating layer having an insulating layer trench having a predetermined size to expose a predetermined area including the electrode pad of the sealed LED chip so that the LED chip and the trench are sealed; And a wiring layer for applying a viscous paste containing a conductive material to the insulating layer trench and electrically connecting the electrode pad to the insulating layer to form an arbitrary circuit pattern on the insulating layer.

Further, the substrate according to the present invention is characterized by being made of a transparent transparent material.

Further, the substrate according to the present invention may further include a phosphor layer for converting the wavelength of light emitted from the LED chip on the opposite side of the trench.

The substrate according to the present invention further comprises a rear trench on the opposite side of the trench, and a phosphor layer is provided on the rear trench.

In addition, the substrate according to the present invention may further include a color filter for converting light emitted from the LED chip to light having a predetermined wavelength range, on a side opposite to the side where the trench is formed.

The bonding material according to the present invention may further comprise a phosphor or a color conversion material for converting the wavelength of light emitted from the LED chip.

The wiring layer according to the present invention is formed of a viscous paste containing a conductive material.

The present invention also provides a method of manufacturing a semiconductor device, comprising the steps of: a) forming a trench of a predetermined size on a substrate and applying a bonding material to the trench; b) bonding the LED chip to the trench to which the bonding material is applied; c) applying an insulation layer so that the LED chip and the trench are sealed, and processing an insulation layer trench having a predetermined size to expose a predetermined area including the electrode pad of the sealed LED chip; And d) applying a viscous paste containing a conductive material to the insulating layer trench to electrically connect to the electrode pad, and processing a wiring layer to form an arbitrary circuit pattern on the insulating layer.

In addition, the present invention provides a light emitting device comprising: a) a phosphor layer for converting a wavelength of light emitted from an LED chip on the opposite side of a substrate on which the trench is formed, or a color filter for converting light emitted from the LED chip into light having a certain wavelength range And installing at least one further.

Further, the step a) according to the present invention is characterized by further comprising the step of forming a rear trench on the opposite side of the substrate on which the trench is formed.

The insulating layer trench in the step c) according to the present invention may be formed by any one of photolithography using a photosensitive material, etching resist processing, laser drilling, injection of a liquid insulating material using a mold, and residue removal Is formed.

The wiring layer in the step (d) according to the present invention is formed by using either inkjet printing or screen printing.

The present invention is advantageous in that an LED chip is provided in a trench structure formed on a substrate and an additional trench structure is formed in an insulating layer provided on the trench structure to form a wiring, thereby improving the manufacturing process.

In addition, the present invention has an advantage that a wiring layer can be easily processed even when an LED chip having a small size is used.

Further, the present invention has an advantage that various wiring materials can be used because the wiring layer is processed by a transistor structure not a via-hole structure.

In addition, the present invention has an advantage of improving the yield by improving the problem of the electrical connection structure between the electrode pad and the wiring layer due to the via hole structure.

In addition, the present invention provides an LED chip on a flexible transparent material, which is not a structure for mounting an LED chip on a wiring board, and forms a wiring layer, thereby reducing the thickness of the LED panel and providing a flexible LED panel There are advantages.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a sectional view showing the structure of a conventional LED package. FIG.
2 is a plan view of an LED package according to the prior art;
3 is a cross-sectional view of an LED panel according to the present invention.
4 is a plan view of an LED panel according to the present invention.
5 is a flowchart illustrating a manufacturing process of an LED panel according to the present invention.
6 is a perspective view showing a substrate on which a trench structure of an LED panel according to the present invention is formed;
7 is a cross-sectional view showing an LED chip mounted on a trench structure of an LED panel according to the present invention.
8 is a cross-sectional view showing that an insulation layer is provided on an LED panel according to the present invention.
9 is a cross-sectional view showing a trench structure in an insulation layer of an LED panel according to the present invention.
10 is a perspective view showing an electrode pad provided on an insulating layer trench structure of the LED panel according to FIG.
11 is a sectional view showing a wiring layer provided on an LED panel according to the present invention.
12 is a sectional view showing an array structure of an LED panel according to the present invention.
13 is a plan view showing a wiring layer provided in the LED panel array according to FIG.
14 is a sectional view showing another embodiment of the LED panel according to the present invention.
15 is a sectional view showing still another embodiment of the LED panel according to the present invention.

Hereinafter, preferred embodiments of an LED panel and a method of manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings.

(Embodiment 1)

FIG. 3 is a sectional view showing an LED panel according to the present invention, FIG. 4 is a plan view showing an LED panel according to the present invention, FIG. 5 is a flowchart showing a manufacturing process of the LED panel according to the present invention, Is an example of a manufacturing process of an LED panel.

3 to 11, the LED panel 100 according to the present invention includes a substrate 110, a bonding material 120, an LED chip 130, an insulating layer 140, A first electrode pad 150, a second electrode pad 151, and a wiring layer 160.

The substrate 110 is preferably made of a flexible transparent material having an ability to be used as a substrate of a circuit substrate having an insulating property, heat resistance, etc., which is made of an organic substrate or an inorganic substrate and has flexibility.

The substrate 110 may be formed of a material selected from the group consisting of polyethylene terephthalate (PET), polyethylenenaphthalate (PEN), polyimide, liquid crystal polymer, polyetheretherketone (PEEK), polyparaphenylene terephthalamide (PPTA) A resin or a fluororesin copolymer, but the present invention is not limited thereto. The resin may be used alone, or may be composed of two or more.

In addition, the substrate 110 is formed with a trench 111 having a predetermined size so that the LED chip 130 can be installed.

The trenches 111 are formed on the substrate 110 at regular intervals and are formed to have a predetermined size and depth so that the LED chip 130 can be received and accommodated.

The trench 111 can be formed in various ways through a photolithography process using a photosensitive material, an etching resist process, a drilling process using a laser, and an injection process using a mold.

The bonding material 120 may be provided on the trench 111 to fix the LED chip 130. The bonding material 120 may include any resin capable of bonding the substrate 110 and the LED chip 130, , A polyester resin, an acrylic resin, a urethane resin, a silicone resin, a polyimide resin, a vinyl chloride resin, and the like. However, the present invention is not limited thereto and the resin may be composed solely or a mixture of two or more It is possible.

The bonding material 120 may further include a phosphor or a color conversion material for converting the wavelength of light emitted from the LED chip 130.

The LED chip 130 is fixed to the trench 111 of the substrate 110 through the bonding material 120 and outputs light in a predetermined wavelength range such as red, green, blue, and ultraviolet. , A micro LED structure, and the like.

The insulating layer 140 may be formed such that the LED chip 130 and the trench 111 are sealed so that the first electrode pad 150 and the second electrode pad 151 of the sealed LED chip 130 are mostly exposed. An insulating layer trench 141 of a predetermined size is formed.

The insulating layer 140 may be formed of the same material as the substrate 110, or may be formed of a silicone resin, a urethane resin, an epoxy resin, or the like.

The insulating layer trench 141 has a structure in which a part of the insulating layer 140 is removed to expose a part or all of the LED chip 130. The LED chip 130 is exposed in a wide area, 150, and 151 are easily exposed, and the contact area with the wiring layer 160 is increased, thereby improving the electrical conductivity.

In addition, the insulating layer trench 141 can be formed in various ways through photolithography using a photosensitive material, etching resist processing, drilling using a laser, injection of a liquid insulating material using a mold, and residue removal .

The electrode pads 150 and 151 are configured to supply power to the LED chip 130 and include a first electrode pad 150 and a second electrode pad 151 on the LED chip 130, So that the LED chip 130 exposed through the insulating layer trench 141 and the wiring layer 160 are electrically connected.

The first and second electrode pads 150 and 151 may be formed of a material selected from the group consisting of Ti, Ru, Rh, Ir, Mg, Zn, Al, In, Ta, Pd, Co, Ni, Si, Can be selected from among the optional alloys.

The wiring layer 160 is formed on the insulating layer 140 and is electrically connected to the first and second electrode pads 150 and 151 to form an arbitrary circuit pattern on the insulating layer 140.

The wiring layer 160 is formed by applying a viscous paste including a conductive material such as silver (Ag) to the insulating layer 140 by inkjet, screen printing or the like, and the viscous paste is applied to the insulating layer trench 141 And is electrically connected to the first and second electrode pads 150 and 151.

On the other hand, in the present embodiment, the unit module structure has been described as an example for convenience of explanation, but it is not limited to this, and it will be apparent that the unit module structure can be configured as an array structure as shown in Figs.

Next, a manufacturing process of the LED panel 100 according to the present invention will be described.

A method of manufacturing an LED panel according to the present invention includes forming a trench 111 having a predetermined size on a substrate 110 (S100).

The trench 111 formed in step S100 may be formed in various ways through a photolithography process using a photosensitive material, an etching resist process, a drilling process using a laser, and an injection process using a mold.

The bonding material 120 for bonding the substrate 110 and the LED chip 130 to the trench 111 formed in step S100 is applied S110.

The bonding material 120 applied in step S110 may further include a phosphor or a color conversion material for converting the wavelength of light emitted from the LED chip 130. [

When the bonding material 120 of step S110 is applied, the LED chip 130 is bonded to the trench 111 (S120), and the LED chip 130 bonded to the substrate 110 and the LED chip 130 The insulating layer 140 is applied to the substrate 110 so as to close the trench 111 (S130).

When the insulating layer 140 is coated on the upper surface of the LED chip 130 to form a wiring layer 160 for supplying power to the LED chip 130 sealed by the insulating layer 140, An insulating layer trench 141 of a predetermined size is formed (S140) so that a part of the insulating layer trench 141 is exposed.

The insulating layer trench 141 in the step S140 can be variously formed by photolithography using a photosensitive material, etching resist processing, drilling using a laser, injection of a liquid insulating material using a mold, and removal of residues have.

That is, the insulating layer trench 141 may be formed by forming an insulating layer 140 and then forming through photolithography using a photosensitive material, a photomask, etching resist, or the like, or using a laser to remove a part of the insulating layer 140 Or an insulating layer 140 is formed by applying a liquid insulating material to the remaining portion of the LED chip 130 and forming an insulating layer 140 on the insulating layer trench 141 formed through the removal of the mold By removing the residue using a laser or the like, an insulating layer trench 141 structure can be formed in the insulating layer 140.

When the insulating layer trench 141 is formed in step S140, the insulating layer trench 141 is electrically connected to the first and second electrode pads 150 and 151 exposed through the insulating layer trench 141, A wiring layer 160 to be formed on the layer 140 is formed (S150).

The wiring layer 160 in step S150 forms a predetermined viscosity and is formed by applying a paste containing a conductive material through inkjet printing or screen printing.

Therefore, the electrode pads 150 and 151 of the LED chip 130 and the wiring layer 160 can be easily bonded to each other through the insulating layer trench 141 formed in a large area, thereby improving the manufacturing process, The wiring layer can be easily processed by using an LED chip.

(Second Embodiment)

14 is a cross-sectional view showing another embodiment of the LED panel according to the present invention.

14, the LED panel 100a according to the second embodiment includes a substrate 110 on which a trench 111 of a predetermined size is formed, and a plurality of LED chips 100 mounted on the trench 111 to fix the LED chip 130 An LED chip 130 which is fixed to the trench 111 through a bonding material 120 and outputs a light having a predetermined wavelength and an LED chip 130 which is hermetically sealed with the LED chip 130 and the trench 111. [ An insulating layer 140 having an insulating layer trench 141 of a predetermined size to expose a part of the LED chip 130 and an LED chip 130 electrically exposed to the insulating layer trench 141, A wiring layer 160 electrically connected to the electrode pads 150 and 151 and electrically connected to the electrode pads 150 and 151 to form a circuit pattern on the insulating layer 140; And a phosphor layer 170 for converting the wavelength of light emitted from the LED chip 130 on the opposite side of the substrate 110.

The LED panel 100a according to the second embodiment is different from the LED panel 100 according to the first embodiment in that the LED panel 100 according to the first embodiment is provided with a phosphor layer for converting the wavelength of light emitted from the LED chip 130 170).

That is, the phosphor layer 170 converts light of, for example, a blue wavelength range output from the LED chip 130 into red or green light for output.

The phosphor layer 170 may be formed of a quantum dot fluorescent material or a ceramic fluorescent material and may be a garnet fluorescent material, a silicate fluorescent material, a nitride fluorescent material, Or an oxynitride-based phosphor.

(Third Embodiment)

15 is a cross-sectional view showing another embodiment of the LED panel according to the present invention.

15, the LED panel 100b according to the third embodiment includes a substrate 110a on which a trench 111 having a predetermined size is formed, and an LED chip 100b mounted on the trench 111 to fix the LED chip 130 An LED chip 130 which is fixed to the trench 111 through a bonding material 120 and outputs a light having a predetermined wavelength and an LED chip 130 which is hermetically sealed with the LED chip 130 and the trench 111. [ An insulating layer 140 having an insulating layer trench 141 of a predetermined size to expose a part of the LED chip 130 and an LED chip 130 electrically exposed to the insulating layer trench 141, A wiring layer 160 electrically connected to the electrode pads 150 and 151 and electrically connected to the electrode pads 150 and 151 to form a circuit pattern on the insulating layer 140; A phosphor layer 170 for converting the wavelength of light emitted from the LED chip 130 on the opposite side of the substrate 110 and a phosphor layer 170 for converting the wavelength of light emitted from the LED chip 130 The light is configured to include a color filter 180 for converting the light having a certain range of wavelengths.

The LED panel 100b according to the third embodiment differs from the LED panel 100 according to the first embodiment in the configuration of the substrate 110a, the phosphor layer 170, and the color filter 180.

That is, the LED panel 100b according to the third embodiment forms a rear trench 112 for mounting the phosphor layer 170 on the opposite side of the substrate 110a on which the trench 111 is formed.

The backside trench 112 is formed by forming a trench 111 on the substrate 110a and then performing an additional process.

The color filter 180 has a structure in which light emitted from the LED chip 130 is converted into light having an arbitrary wavelength range on the opposite side of the substrate 110a on which the trench 111 is formed, The light converted into white light is converted into light having a wavelength range of red, green, blue, or the like and output.

Accordingly, an LED chip is provided on a trench structure formed on a substrate, and an additional trench structure is formed on the insulation layer provided on the trench structure to easily form electrode pads and wiring. Thus, the manufacturing process can be improved, It is possible to reduce the thickness of the LED panel and to provide a flexible LED panel because the LED chip is provided in the flexible transparent material instead of the installation structure and the wiring layer is formed.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims. It can be understood that

In the course of the description of the embodiments of the present invention, the thicknesses of the lines and the sizes of the components shown in the drawings may be exaggerated for clarity and convenience of explanation, , Which may vary depending on the intentions or customs of the user, the operator, and the interpretation of such terms should be based on the contents throughout this specification.

100, 100a, 100b: LED panel
110:
111: trench
112: rear trench
120: Bonding material
130: LED chip
140: insulating layer
141: Insulation layer trench
150: first electrode pad
151: second electrode pad
160: wiring layer
170: phosphor layer
180: Color filter

Claims (12)

A substrate 110 made of a transparent transparent material and having a trench 111 of a predetermined size formed on one side thereof;
A bonding material 120 installed on the trench 111 to fix the LED chip 130;
An LED chip 130 fixed to the trench 111 through a bonding material 120 and emitting light having a predetermined wavelength;
An insulating layer 140 having the LED chip 130 and the trench 111 sealed and the insulating layer trench 141 formed to expose the electrode pads 150 and 151 of the sealed LED chip 130; And
A viscous paste containing a conductive material is applied to the insulating layer trench 141 formed on the insulating layer 140 by inkjet or screen printing to be electrically connected to the electrode pads 150 and 151, And a wiring layer (160) for forming an arbitrary circuit pattern on the wiring layer (160).
delete The method according to claim 1,
Wherein the substrate 110 further comprises a phosphor layer 170 for converting the wavelength of light emitted from the LED chip 130 on the opposite side of the substrate 110 on which the trench 111 is formed.
The method of claim 3,
The substrate 110 further includes a rear trench 112 on the opposite side of the substrate 110 on which the trench 111 is formed and a phosphor layer 170 is provided on the rear trench 112. [ .
5. The method of claim 4,
The substrate 110 may further include a color filter 180 for converting light emitted from the LED chip 130 into light having a predetermined wavelength range on the opposite side of the substrate 110 on which the trench 111 is formed LED panels.
6. The method according to any one of claims 1 to 5,
Wherein the bonding material (120) further comprises a phosphor or a color conversion material for converting a wavelength of light emitted from the LED chip (130).
delete a) forming a trench 111 of a predetermined size on a substrate 110 made of a transparent transparent material and applying the bonding material 120 to the trench 111;
b) bonding the LED chip 130 to the trench 111 to which the bonding material 120 is applied;
c) an insulating layer 140 is applied to seal the LED chip 130 and the trench 111 and an insulating layer trench 141 is formed to expose the electrode pads 150 and 151 of the sealed LED chip 130, ; And
d) applying a viscous paste containing a conductive material to the insulating layer trench 141 through ink jet or screen printing to be electrically connected to the electrode pads 150 and 151, And processing the wiring layer (160) so that a pattern is formed.
9. The method of claim 8,
e) a phosphor layer 170 for converting the wavelength of light emitted from the LED chip 130 on the opposite side of the substrate 110a on which the trench 111 is formed or a light emitting layer And a color filter (180) for converting the light into a light having a predetermined wavelength.
10. The method of claim 9,
Wherein the step a) further comprises forming a rear trench 112 on the opposite side of the substrate 111 on which the trench 111 is formed.
11. The method according to any one of claims 8 to 10,
The insulating layer trench 141 in the step c) may be formed using any one of photolithography using a photosensitive material, etching resist processing, drilling using a laser, injection of a liquid insulating material using a mold, and residue removal Wherein the first and second LEDs are formed on the substrate.
delete

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