KR101715949B1 - Display device - Google Patents

Abstract

The display device includes a light emitting array including a plurality of light emitting sources for emitting light; A total reflection layer for totally reflecting the light of the light emitting array; a refractive index variable layer formed on the total reflection layer so as to transmit the light of the total reflection layer with variable refractive index by an electric field; A lower substrate including a plurality of diffraction patterns for refracting at an angle to the substrate; And an upper substrate corresponding to the lower substrate.

Description

Display device

The embodiment relates to a display device.

Display devices for displaying information are actively being developed. For example, the display device may include a liquid crystal display device, a plasma display device, an electroluminescent display device, or a field emission display device. Such a display device is advantageous in that it is lighter than a CRT, can realize a large screen, and is thin in thickness.

Among them, the liquid crystal display device is excellent in moving picture display and has a high contrast ratio, and thus is widely used in notebook computers, monitors, televisions, and navigation systems.

However, the conventional liquid crystal display device requires light, and since a backlight unit for generating such light is separately manufactured and combined with the panel, there is a limitation in reducing the thickness and weight.

In addition, since the conventional liquid crystal display device requires the first and second polarizing plates attached to both sides of the panel to transmit / block the light, there is a limit in reducing the thickness of the panel.

The embodiment provides a display device having a new structure.

The embodiment provides a display device which realizes the maximization of the light and small dot.

According to an embodiment, a display device includes a light emitting array including a plurality of light emitting sources for emitting light; A total reflection layer for totally reflecting light of the light emitting array; a refractive index variable layer formed on the total reflection layer to transmit the light of the total reflection layer with a variable refractive index by an electric field; A lower substrate including a plurality of diffraction patterns for refracting light at an angle for total reflection; And an upper substrate corresponding to the lower substrate.

The embodiment can realize the maximization of the light-weight chip.

1 is a plan view showing a display device according to an embodiment.
FIG. 2 is a cross-sectional view showing the first embodiment cut along the line II 'of the display device of FIG.
3 is a cross-sectional view showing the first embodiment in which the display device of FIG. 1 is cut along the line JJ '.
4 is a cross-sectional view showing an upper substrate of the display device of FIG.
Figs. 5A and 5B are diagrams showing how the refractive index varies with voltage in the refractive index variable layer of the display device of Fig.
FIG. 6 is a view showing a state where light is totally reflected by the total reflection layer and the diffraction pattern in the display device of FIG. 1;
7A to 7C are diagrams showing a manufacturing process of a lower substrate in the display device of FIG.
FIG. 8 is a cross-sectional view showing the second embodiment taken along line II 'of the display device of FIG.
9 is a diagram showing the structure of a liquid crystal of a refractive index variable layer in the display device of FIG.

Hereinafter, embodiments will be described in detail with reference to the accompanying drawings.

FIG. 1 is a plan view showing a display device according to an embodiment, FIG. 2 is a cross-sectional view showing a first embodiment cut along a line II 'of the display device of FIG. 1, JJ 'line, and FIG. 4 is a cross-sectional view of the upper substrate of the display device of FIG. 1. Referring to FIG.

1 to 4, the display device 1 according to the first embodiment includes first and second light emitting arrays 16a and 16b which are mounted on both sides of the bottom cover 10 and emit light, And a display panel 35 mounted on the bottom cover 10 between the first and second light emitting arrays 16a and 16b to display information. Further, although not shown, a top case fastened to the bottom cover 10 may be provided while fixing the display panel 35.

The bottom cover 10 may have a shape in which an edge region is bent in a vertical direction. Other regions of the bottom cover 10 other than the edge regions may have a flat surface shape in the horizontal direction.

Each of the first and second light emitting arrays 16a and 16b includes a plurality of light emitting sources 12a and 12b that emit light and a plurality of light emitting sources 12a and 12b that are mounted on the light emitting sources 12a and 12b, And may include printed circuit boards (PCB) 14a and 14b for supplying signals. The first and second light emitting arrays 16a and 16b may be disposed on both sides of the bottom cover 10 in parallel with each other. The PCBs 14a and 14b may be arranged long along the longitudinal direction (second direction), for example. A plurality of light emitting sources 12a and 12b may be mounted on the PCBs 14a and 14b along the vertical direction.

The light emitting sources 12a and 12b may be light emitting diodes (LEDs) or laser diodes.

The light emitting diode may be a combination of a red light emitting diode, a green light emitting diode, and a blue light emitting diode, or may be a white light emitting diode or an ultraviolet (UV) light emitting diode.

Since the light from the light emitting sources 12a and 12b is required to be directly irradiated to the total reflection layer 24 in the embodiment, when light emitting diodes are used as the light emitting sources 12a and 12b, A collimation lens may be arranged to allow the lens to proceed.

The display panel 35 may include a lower substrate 20 and an upper substrate 40.

The lower substrate 20 may include an absorption layer 22, a plurality of total reflection layers 24, a light blocking layer 29, a plurality of diffraction patterns 28a and 28b, and a refractive index variable layer 30.

The absorption layer 22 absorbs light emitted from the total reflection layer 24 to the absorption layer 22 to prevent light from leaking to the back surface of the total reflection layer 24. [ The absorption layer 22 serves to prevent external light incident through the bottom cover 10 from being incident on the total reflection layer 24.

  A plurality of total reflection layers 24 may be formed on the absorption layer 22. The total reflection layer 24 may be formed to be long along the lateral direction (first direction). That is, the total reflection layer 24 may be formed on the absorption layer 22 between the first and second light emitting arrays 16a and 16b.

The total reflection layer 24 may be formed longer than the absorption layer 22 in the transverse direction. In other words, both side edge regions of the absorbing layer 22 are formed on the both sides of the total reflection layer 24 so that the total reflection layer 24 is exposed, Lt; RTI ID = 0.0 > 81 < / RTI >

The absorbent layer 22 may be installed in the bottom cover 10 between the first and second light emitting arrays 16a and 16b. At this time, the first and second light emitting arrays 16a and 16b are positioned in the groove 81 of the absorbing layer 22 so that the light of the first and second light emitting arrays 16a and 16b is directly To the edge regions of the second substrate 24.

A plurality of diffraction patterns 28a and 28b may be formed on the back surfaces of both edge regions of the total reflection layer 24 corresponding to the first and second light emission arrays 16a and 16b. The diffraction patterns 28a and 28b may be formed along the longitudinal direction in parallel with the first and second light emitting arrays 16a and 16b. The diffraction patterns 28a and 28b may be chromium oxide (CrO _x , 0? _X? 1).

Therefore, light emitted from the first and second light emitting arrays 16a and 16b is incident on the diffraction patterns 28a and 28b, and diffraction occurs in the light by the diffraction patterns 28a and 28b And can be refracted at a predetermined angle? For example, the angle? May be an angle at which light is totally reflected in the total reflection layer 24. That is, the angle? May be a critical angle for total reflection. When the light is emitted at an angle larger than the angle?, The light can be totally reflected by the total reflection layer 24, and when the light is emitted at an angle smaller than the angle? Can be incident on the refractive index variable layer (30) after leaving the total reflection layer (24).

 The diffraction patterns 28a and 28b are formed on the back surface of the total reflection layer 24 at predetermined intervals d so that the light is refracted from the diffraction patterns 28a and 28b at the angle? .

Referring to FIG. 6, the refractive index variable layer 30 may be formed on the total reflection layer 24. The common electrode 26 is formed on the total reflection layer 24 so that the common electrode 26 does not greatly affect the progress of light because the thickness of the common electrode 26 is very thin. The refractive index of the common electrode 26 is ignored in the following description. The refractive index of the total reflection layer 24 is n ₁ and the refractive index of the refractive index variable layer 30 is n ₂ . Here, n ₂ denotes the refractive index when no voltage is applied to the refractive index variable layer 30, that is, n ₂ = n _o = n _e .

The critical angle? For total reflection can be expressed by the following equation (1).

In this case, the period d of the pattern can be expressed by the following equation (2).

Here,? Represents the wavelength of light.

Therefore, a plurality of diffraction patterns 28a and 28b having the same period as in Equation 2 are formed on the back surface side of both side edge regions of the total reflection layer 24 corresponding to the first and second light emission arrays 16a and 16b As shown in FIG.

In order for the light to be totally reflected by the total reflection layer 24, the refractive index n ₂ of the refractive index variable layer 30 may be at least smaller than the refractive index n ₁ of the total reflection layer 24.

The total reflection layer 24 can totally reflect light emitted by the diffraction patterns 28a and 28b. The total reflection layer 24 may be silicon oxide nitride (SiO _x N _y , 0? _X? 1, 0? _Y? 1).

The total reflection layer 24 has a thickness of 100 nm to 900 nm and may have a refractive index of 1.48 to 1.58.

The light emitted from the first and second light emitting arrays 16a and 16b disposed on both sides of the total reflection layer 24 is reflected by the total reflection layer 24 The light can be totally reflected along the horizontal direction.

A mirror (not shown) may be formed on both sides of the total reflection layer 24 so that light in the total reflection layer 24 is not emitted to the outside from both sides of the total reflection layer 24. Therefore, the light traveling to the mirror in the total reflection layer 24 can be reflected by the mirror and then travel into the total reflection layer 24 again.

A light blocking layer 29 may be formed on the absorption layer 22 between the total reflection layers 24. The light blocking layer 29 may be formed of an organic material or an inorganic material having a refractive index lower than that of the total reflection layer 24. Therefore, since the refractive index of the light blocking layer 29 is smaller than the refractive index n1 of the total reflection layer 24, the light of the total reflection layer 24 is not emitted to the light blocking layer 29.

A common electrode 26 may be formed on the entire region of the total reflection layer 24 and the light blocking layer 29. The common electrode 26 may be formed on the upper substrate 40 together with the pixel electrode 57. Although the common electrode 26 is formed on the lower substrate 20,

The common electrode 26 may be made of a transparent conductive material such as ITO, IZO or ITZO.

The refractive index variable layer 30 may be formed on the common electrode 26. When the common electrode 26 is formed on the upper substrate 40, the refractive index variable layer 30 may be formed on the plurality of total reflection layers 24 and the light blocking layer 29.

The refractive index variable layer 30 may include blue phase mode liquid crystals. Or the refractive index variable layer 30 may include an organic or inorganic electro-optic material whose refractive index is variable according to the intensity of an electric field.

As shown in FIG. 5A, the blue phase mode liquid crystals may have a refractive index (n ₂ = n _iso = n _o = n _e ) having optical isotropic in the absence of a voltage.

The light of the total reflection layer 24 is not emitted to the refractive index variable layer 30 in the case of having such an isotropic refractive index.

5B, when the voltage is applied, the blue phase mode liquid crystals 130 have optical anisotropy (refractive index) of n _{e in} the direction parallel to the electric field direction and refractive index n _{o in} the direction perpendicular to the electric field direction ). ≪ / RTI >

At this time, the magnitude relation of the refractive index of the refractive index variable layer 30 can be represented by n _o ≤ n ₂ = n _iso ≤ n _e .

When having such a birefringence, the blue phase mode liquid crystal may have a long oval shape along the electric field direction.

Accordingly, the light of the total reflection layer 24 can be emitted to the refractive index variable layer 30 as ne becomes larger than niso.

In other words, in the refractive index variable layer 30, the refractive index of the refractive index variable layer 30 is changed to the birefringence index as the voltage is applied, and the light of the total reflection layer 24 is reflected by the refractive index variable layer 30 ). ≪ / RTI >

Since the blue phase mode liquid crystal has the property that the refractive index is changed so as to become isotropic in isotropy depending on the magnitude of the voltage, the voltage response rate can be improved.

Since the blue phase mode liquid crystal controls the transmission / blocking of light by using the refractive index change characteristic, no initial alignment is required. Therefore, it is not necessary to form separate orientation films on the upper and lower surfaces of the refractive index variable layer 30, The structure of the panel 35 is simplified and the thickness thereof is thinned, and a rapid process can be performed.

Such a blue phase mode liquid crystal has a smectic blue phase and a cholesteric blue phase.

The blue phase mode liquid crystal will be described in detail with reference to FIG.

Referring to FIG. 9, the blue phase mode liquid crystal 130 is arranged in a cylinder in a twisted manner in the form of a twisted liquid crystal. This arrangement is called a double twist cylinder (DTS) 133 structure .

The blue phase mode liquid crystals 130 are gradually twisted from the central axis of the DTS 133 toward the outer side. That is, the blue phase mode liquid crystals 130 are arranged to be twisted along two twist axes (X, Y) orthogonal to each other in the DTS 133.

Accordingly, the blue phase mode liquid crystals 130 are oriented in the DTS 133 with respect to the central axis of the DTS 133. [

Also, these DTSs 133 are arranged in a lattice (135) structure.

Since the blue phase mode liquid crystal 130 is a liquid crystal phase appearing in a temperature region between a chiral nematic phase and an isotropic phase and is expressed only in a narrow range of 1 to 2 ° C, It is important to do.

The blue phase mode liquid crystal 130 includes a polymer stabilized blue phase mode liquid crystal 130 that is stabilized in combination with a polymer. The polymer stabilized blue phase mode liquid crystal 130 is a blue phase mode liquid crystal 130 in which polymers are mixed, and the DTSs 133 are stabilized in a lattice 135 structure. That is, when the polymer is mixed with the blue phase mode liquid crystal 130, the polymer binds better with the liquid crystals forming the DTS 133, that is, liquid crystals having no direction than the liquid crystals having the directionality. As a result, the structure of the grating 135 of the DTS 133 is stabilized, and the temperature band in which the blue phase is expressed is expanded to 0 to 50 DEG C or less.

Such blue phases may comprise polymeric compounds such as monomers, photoinitiators and binders. The polymer compound stabilizes the blue phase mode liquid crystal 130 and the temperature at which the stabilized blue phase mode liquid crystal 130 is expressed can be expanded to 0 to 50 ° C.

The blue phase mode liquid crystal 130 stabilized by the polymer compound is disorderly arranged when no electric field is applied between the electrodes, for example, between the common electrode and the pixel electrode, and when an electric field is applied between the electrodes, Direction.

The upper substrate 40 may include a base substrate 41, a color layer 43, a black matrix 69, a thin film transistor 65 and a pixel electrode 57, as shown in Figs. have.

A gate line (not shown) and a gate electrode 51 may be formed on the base substrate 41. The base substrate 41 may be made of glass or plastic.

The gate electrode 51 may protrude from the gate line.

A gate insulating film 53 is formed on the base substrate 41 including the gate line and a semiconductor layer 53 including an active layer and an ohmic contact layer is formed on the gate insulating film 53 corresponding to the gate electrode 51, (55) may be formed.

A data line 60 which intersects the gate line and a source electrode 61 and a drain electrode 63 which are spaced apart from each other on the semiconductor layer 55 are formed on a base substrate 41 including the semiconductor layer 55, Can be formed.

The source electrode 61 may protrude from the data line 60.

A pixel region can be defined by the intersection of the gate line and the data line 60.

The thin film transistor 65 may be formed by the upper gate electrode 51, the semiconductor layer 55, and the source / drain electrodes 61 and 63. The thin film transistor 65 may be electrically connected to the gate line and the data line 60 to drive the pixel region. The thin film transistor 65 may be formed in the pixel region to drive the pixel region.

A plurality of pixel regions defined by the gate lines and the data lines 60 may be arranged in a matrix form on the upper substrate 40. Therefore, each pixel region can be individually driven by the thin film transistor 65 formed in each pixel region.

A protective film 67 may be formed on the base substrate 41 including the data line 60 and a contact hole in which the drain electrode 63 is exposed.

A pixel electrode 57 electrically connected to the drain electrode 63 through a contact hole may be formed in the pixel region on the passivation layer 67. The pixel electrode 57 may be made of a transparent conductive material such as ITO, IZO or ITZO. The pixel electrode 57 may be formed in each pixel region. Therefore, the data voltage supplied to the data line 60 can be applied to the pixel electrode 57 by the switching control of the thin film transistor 65. A common voltage may be applied to the common electrode 26 of the lower substrate 20.

The refractive index of the refractive index variable layer 30 is varied by the electric field between the data voltage of the pixel electrode 57 and the common voltage of the common electrode 26. As a result, And can be emitted to the variable layer 30.

If the data voltage is not applied to the pixel electrode 57, the refractive index of the refractive index variable layer 30 is not changed, and the light of the total reflection layer 24 is totally reflected within the total reflection layer 24 And is not emitted to the refractive index variable layer 30.

The intensity of the electric field between the pixel electrode 57 and the common electrode 26 is changed according to the intensity of the data voltage applied to the pixel electrode 57 and the intensity of the refractive index of the refractive index variable layer 30 is The amount of light emitted to the refractive index variable layer 30 can be varied. The gradation representation can be made possible through such light quantity change.

A black matrix 69 may be formed on the protective film 67 of the upper substrate 40 corresponding to the gate line, the data line 60, the thin film transistor 65 and the light emitting arrays 16a and 16b have.

Since the gate line, the data line 60 and the thin film transistor 65 are formed between the pixel regions, the black matrix 69 covering the gate line, the data line 60 and the thin film transistor 65 May be formed in a lattice shape.

A color layer 43 may be formed on the pixel region between the black matrixes 69. The color layer 43 may include a red color layer 43a, a green color layer 43b, and a blue color layer 43c.

The color layer 43 may be a color filter formed of a red color resin, a green color resin, and a blue color resin, or a phosphor formed of a red red phosphor, a green phosphor material, and a blue phosphor.

When the light emitted from the light emitting arrays 16a and 16b is white, the white light passes through the color layer 43 via the refractive index variable layer 30 and is converted into red color light, green color light, or blue color light It can be modulated.

Therefore, when no data voltage is applied to the pixel electrode 57, the refractive index of the refractive index variable layer 30 is less than the refractive index of the total reflection layer 24 due to the optical anisotropy in which no change occurs, The light of the layer 24 is totally reflected within the total reflection layer 24 and is not emitted to the refractive index variable layer 30. [

On the other hand, when a data voltage is applied to the pixel electrode 57, the refractive index of the refractive index variable layer 30 is varied by an electric field between the common voltage applied to the common electrode 26 and the data voltage The blue phase mode liquid crystal is arranged according to the variable refractive index of the refractive index variable layer 30. The light of the total reflection layer 24 is emitted to the refractive index variable layer 30 by the variation of the refractive index of the refractive index variable layer 30 and is transmitted through the refractive index variable layer 30 .

The refractive index of the refractive index variable layer 30 varies according to the intensity of the data voltage applied to the pixel electrode 57. Accordingly, the arrangement of the blue phase mode liquid crystal varies, The amount of light transmitted between the light sources can be varied. By using such a change in the amount of light, gradation expression can be made possible.

7A to 7C are diagrams showing a manufacturing process of a lower substrate in the display device of FIG.

7A, a total reflection layer 24 having a refractive index of 1.48 to 1.58 is formed on the absorption layer 22, and a plurality of long total reflection layers 24 are formed along the lateral direction by patterning the transmission layer. have.

The absorption layer 22 absorbs light emitted from the total reflection layer 24 to the absorption layer 22 to prevent light from leaking to the back surface of the total reflection layer 24. [ The absorption layer 22 serves to prevent external light from being incident on the total reflection layer 24.

The total reflection layer 24 is made of a material having a high refractive index of 1.48 to 1.58, such as silicon oxide nitride (SiO _x N _y , 0? _X? 1, 0? _Y? 1) 24 so that the light is totally reflected.

The total reflection layer 24 may have a thickness of 100 nm to 900 nm. This thickness may be in a range of thicknesses suitable for light to generate total reflection.

The total reflection layer 24 is spaced apart from each other so that total reflection can be generated independently of the light in each total reflection layer 24. [

A light blocking film may be formed on the absorption layer 22 including the total reflection layer 24 and a light blocking layer 29 may be formed between the total reflection layers 24 by patterning the light blocking film.

The light blocking layer 29 may be formed of an organic material or an inorganic material having a refractive index lower than that of the total reflection layer 24. Therefore, since the refractive index of the light blocking layer 29 is smaller than the refractive index of the total reflection layer 24, the light of the total reflection layer 24 is not emitted to the light blocking layer 29.

A common electrode 26 may be formed on the entire region of the total reflection layer 24 and the light blocking layer 29. The common electrode 26 may be formed on the upper substrate 40 together with the pixel electrode 57. Although the common electrode 26 is formed on the lower substrate 20,

The common electrode may be made of a transparent conductive material, for example, ITO, IZO or ITZO.

7B, the absorption layer 22 is turned over so that the absorption layer 22 is positioned on the uppermost layer, and the total reflection layer 24 and the light blocking layer 29 below the absorption layer 22 are exposed. Grooves 81 may be formed in which the edge regions of both sides of the absorbent layer 22 are removed along the longitudinal direction by patterning the absorbent layer 22 along the longitudinal direction. Each of the grooves 81 may be elongated along the longitudinal direction.

Referring to FIG. 7C, a chromium oxide film made of chromium oxide (CrO _x ) is formed on the exposed total reflection layer 24 and the light blocking layer 29, and the chromium oxide film is patterned along the longitudinal direction A plurality of diffraction patterns 28a and 28b can be formed on the total reflection layer 24 and the light blocking layer 29. [ The diffraction patterns 28a and 28b may be alternately formed on the total reflection layer 24 and the light blocking layer 29 because the diffraction patterns 28a and 28b are formed along the longitudinal direction. For example, the diffraction patterns 28a and 28b may be formed along the longitudinal direction in the order of the total reflection layer 24, the light blocking layer 29, the total reflection layer 24, and the light blocking layer 29 in this order.

The diffraction patterns 28a and 28b may be formed to adjust the exit angle of the light so that light is totally reflected by the total reflection layer 24.

In this case, the diffraction patterns 28a and 28b may be formed only in the total reflection layer 24 without being formed in the light blocking layer 29, as necessary, because the light blocking layer 29 is not related to the total reflection , But the embodiment is not limited thereto.

Emitting arrays 16a and 16b may be disposed at positions corresponding to the diffraction patterns 28a and 28b. Light from the light emitting arrays 16a and 16b is incident on the diffraction patterns 28a and 28b and light is emitted at an angle equal to the critical angle of total reflection by the diffraction patterns 28a and 28b, The light can be totally reflected within the total reflection layer 24.

The light of the total reflection layer 24 may be emitted to the refractive index variable layer 30 when the refractive index of the refractive index variable layer 30 on the common electrode 26 is varied by the electric field applied by the voltage.

8 is a cross-sectional view showing a second embodiment taken along line I-I 'of the display device of FIG.

The second embodiment is substantially the same as the first embodiment except that the diffraction pattern is formed on both side edge regions of the absorber layer.

Therefore, in the description of the second embodiment, the same constituent elements as those of the first embodiment are denoted by the same reference numerals, and a detailed description thereof will be omitted.

8, the display device according to the second embodiment includes a bottom cover 10, first and second light emitting arrays 16a and 16b that are mounted on both sides of the bottom cover 10 to emit light, And a display panel mounted on the bottom cover 10 between the first and second light emitting arrays 16a and 16b to display information.

The display panel may include a lower substrate 20 and an upper substrate 40.

The lower substrate 20 may include an absorption layer 22, a plurality of total reflection layers 24, a light blocking layer 29, a plurality of diffraction patterns 28a and 28b, and a refractive index variable layer 30.

The diffraction patterns 28a and 28b may be formed on both side edge regions of the absorption layer 22. That is, a plurality of first diffraction patterns 28a are formed on the first side edge region of the absorption layer 22, and a plurality of second diffraction patterns 28b are formed on the second side edge region of the absorption layer 22. [ Can be formed.

The total reflection layer 24 is formed to be long along the lateral direction (first direction), whereas the first and second diffraction patterns 28a and 28b may be formed long along the longitudinal direction (second direction).

The first and second diffraction patterns 28a and 28b are formed on the first and second sides of the absorption layer 22 corresponding to the total reflection layer 24, May be formed on the edge regions. In this case, the first and second diffraction patterns 28a and 28b are not formed in the region of the absorption layer 22 corresponding to the light blocking layer 29 formed between the total reflection layers 24. However, the embodiment is not limited to this.

The first and second light emitting arrays 16a and 16b may be disposed on both sides of the bottom cover 10 corresponding to the first and second diffraction patterns 28a and 28b. In other words, on the first and second side edge regions of the absorbent layer 22 corresponding to the first and second emissive arrays 16, 16b disposed on both sides of the bottom cover 10, 2 diffraction patterns 28a and 28b may be formed.

The thin film transistor 65 and the pixel electrode 57 are formed on the upper substrate 40 in the first and second embodiments, Or may be formed on the substrate 20. In this case, the common electrode 26 may be formed on one of the lower substrate 20 and the upper substrate 40.

1: Display device 10: Bottom cover
12a, 12b: Light emitting sources 14a, 14b: PCB
16a, 16b: light emitting array 20:
22: absorption layer 24: total reflection layer
26: common electrode 28a, 28b, 71a, 71b: diffraction pattern
29: light blocking layer 30: refractive index variable layer
35: display panel 40: upper substrate
41: base substrate 43, 43a, 43b, 43c: colored layer
51: gate electrode 53: gate insulating film
55: semiconductor layer 57: pixel electrode
60: Data line 61: Source electrode
63: drain electrode 65: thin film transistor
67: protective layer 69: black matrix
81: Home

Claims (21)

A light emitting array including a plurality of light emitting sources for emitting light;
A total reflection layer for totally reflecting the light of the light emitting array; a refractive index variable layer formed on the light emitting array to transmit the light of the total reflection layer with a refractive index variable by an electric field; A lower substrate including a plurality of diffraction patterns for refracting light at an angle for total reflection; And
And an upper substrate corresponding to the lower substrate, the upper substrate including a thin film transistor, a pixel electrode electrically connected to the thin film transistor, and a black matrix covering the thin film transistor. The method according to claim 1,
Wherein the upper substrate further comprises a common electrode and the refractive index of the refractive index variable layer is varied by an electric field generated between the common electrode and the pixel electrode. The method according to claim 1,
Wherein the lower substrate includes a common electrode and the refractive index of the refractive index variable layer is varied by an electric field generated between the common electrode and the pixel electrode. The method according to claim 1,
Wherein the lower substrate comprises:
And a color layer for determining the color of the light. 5. The method of claim 4,
Wherein the color layer comprises one of a color resin and a fluorescent material. The method according to claim 1,
The refractive-index-
A blue phase mode liquid crystal, an organic electro-optic material, and an inorganic electro-optic material. The method according to claim 1,
The refractive-index-
And the isotropic refractive index when the electric field is absent. 8. The method of claim 7,
Wherein the isotropic refractive index is at least smaller than the refractive index of the total reflection layer. The method according to claim 1,
The refractive-index-
And anisotropic birefringence is varied by the electric field. The method according to claim 1,
The light-
Wherein the display device is one of a light emitting diode and a laser diode. The method according to claim 1,
Wherein the total reflection layer comprises:
Includes a plurality of total reflection layers,
And a light blocking layer between the total reflection layers at least smaller than a refractive index of the total reflection layer. 12. The method of claim 11,
And a light absorbing layer on the back surface of the total reflection layer and the light blocking layer. 12. The method of claim 11,
In the diffraction pattern,
Wherein the reflective layer is formed on the back surface of the total reflection layer and the edge regions of the light blocking layer corresponding to the light emitting array. 14. The method of claim 13,
Wherein the diffraction pattern is formed along a direction perpendicular to the longitudinal direction of the total reflection layer. 13. The method of claim 12,
In the diffraction pattern,
Wherein the light emitting layer is formed on an edge region of the light absorbing layer corresponding to the light emitting array. 16. The method of claim 15,
Wherein the diffraction pattern is formed along a direction perpendicular to the longitudinal direction of the total reflection layer. The method according to claim 1,
And the period of the diffraction pattern is expressed by the following expression.

,? is a wavelength of light, and? is a critical angle for total reflection of light.
The method according to claim 1,
Wherein the diffraction pattern is chromium oxide (CrO _x , 0? _X? 1). The method according to claim 1,
Wherein the total reflection layer comprises:
And a thickness of 100 nm to 900 nm and a refractive index of 1.48 to 1.58. The method according to claim 1,
Wherein the total reflection layer comprises:
Silicon oxide nitride (SiO _x N _y , 0? _X? 1, 0? _Y? 1). A first and a second light emitting array including a plurality of light emitting sources for emitting light;
A total reflection layer for totally reflecting the light of the first and second light emitting arrays; a refractive index variable layer formed on the total reflection layer to transmit the light of the total reflection layer with a refractive index variable by an electric field; A lower substrate disposed at a position corresponding to the light emitting array and including a plurality of first and second diffraction patterns for refracting the light at an angle for total reflection; And
And an upper substrate corresponding to the lower substrate, the upper substrate including a thin film transistor, a pixel electrode electrically connected to the thin film transistor, and a black matrix covering the thin film transistor.

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