KR101628370B1 - Light emitting device package - Google Patents

Abstract

A light emitting device package is disclosed. The light emitting device package includes an insulating substrate; A wiring disposed on the insulating substrate; A lead formed integrally with the wiring, the lead extending from the wiring; Bumps in direct contact with the leads; And a light emitting element in direct contact with the bump.

LED, package, tape, substrate, polyimide

Description

[0001] LIGHT EMITTING DEVICE PACKAGE [0002]

An embodiment relates to a light emitting device package.

In general, a semiconductor light emitting device is an LED (Light Emitting Diode), which is an element used to transmit and receive signals by converting an electric signal into an infrared ray, a visible ray, or an ultraviolet ray using the characteristics of a compound semiconductor.

The LEDs can be packaged and applied to home electric appliances, remote controllers, electric sign boards, displays, various automation devices, electric lamps, and the like.

Embodiments provide a light emitting device package having high productivity and being easily manufactured, having high reliability, and having improved electrical characteristics.

A light emitting device package according to an exemplary embodiment includes an insulating substrate; A wiring disposed on the insulating substrate; A lead electrode formed integrally with the wiring and extending from the wiring; A bump directly contacting the lead electrode; And a light emitting element in direct contact with the bump.

A light emitting device package according to an embodiment includes an insulating substrate on which a through hole is formed; A conductive pattern disposed on the insulating substrate; And a light emitting chip disposed corresponding to the through hole and connected to the conductive pattern.

In the light emitting device package according to the embodiment, the lead electrode and the light emitting element are connected by bumps. Therefore, the light emitting device package according to the embodiment has a higher contact property, that is, a lower contact resistance, by wire, than when the lead electrode and the light emitting device are connected. Further, since the light emitting device package according to the embodiment connects the lead electrode and the light emitting element by the bump, it is possible to prevent a short circuit.

Therefore, the light emitting device package according to the embodiment has improved electrical characteristics and high reliability.

Further, since the lead electrode and the light emitting element are connected by the bumps, they can be coupled by the upward and downward pressure. The light emitting device package according to the embodiment may be formed by applying pressure to the lead electrode and the light emitting device in the vertical direction. That is, the light emitting device package according to the embodiment does not require a process for connecting wires.

In other words, a plurality of lead electrodes and a plurality of light emitting devices are bonded together by a single process, so that a plurality of light emitting device packages having the structure according to the present embodiment can be manufactured at one time.

Therefore, the light emitting device package according to the embodiment has high productivity and can be easily manufactured.

In the description of the embodiments, each substrate, layer, region, wiring, hole, chip or electrode is referred to as being "on" or "under" each substrate, layer, Quot; on "and" under "include both being formed" directly "or" indirectly " . In addition, the upper or lower reference of each component is described with reference to the drawings. The size of each component in the drawings may be exaggerated for the sake of explanation and does not mean the size actually applied.

1 is an exploded perspective view illustrating a light emitting diode package according to an embodiment. 2 is a plan view showing a state in which a lead electrode and a light emitting diode chip are connected. 3 is a cross-sectional view showing a section taken along line A-A in Fig. 4 is an exploded perspective view illustrating a light emitting diode package according to another embodiment. 5 is a view showing a process of bonding the lead electrode and the light emitting diode.

1 to 3, a light emitting diode (LED) package according to an embodiment includes an insulating substrate 100, a lead electrode 210, a wiring 220, a connection terminal 230, A light emitting diode chip 300, a bump 400, a heat dissipation unit 500, a solder resist 600, and a lens unit 700.

The insulating substrate 100 has a plate shape. The insulating substrate 100 is an insulator. Examples of the material used for the insulating substrate 100 include a polyimide-based resin and the like.

The insulating substrate 100 supports the lead electrode 210, the wiring 220, the light emitting diode chip 300, the heat dissipation unit 500, the solder resist 600, and the lens unit 700 do. The insulating substrate 100 is flexible. Alternatively, the insulating substrate 100 may be rigid.

The insulating substrate 100 includes a through hole 110 formed at a central portion thereof. The through hole 110 penetrates the insulating substrate 100. The through hole 110 may have a circular shape, and may have various other shapes. The size of the through hole 110 may be larger than the size of the LED chip 300. That is, the through-hole 110 may have a larger planar diameter and a larger diameter than the light emitting diode chip 300 when viewed in plan.

An area defined corresponding to the through hole 110, that is, a region where the through hole 110 is formed is defined as an open area OR. The open region OR includes an area in the through hole 110, an area on the through hole 110, and an area under the through hole 110. [

The thickness of the insulating substrate 100 may be about 0.01 mm to about 5 mm. The insulating substrate 100 may have, for example, a rectangular plate shape and may have a cut side.

The lead electrode 210 extends from the wiring 220. The lead electrode 210 is disposed in the open region OR. That is, the lead electrode 210 extends from the wiring 220 to the open region OR. The lead electrode 210 is disposed corresponding to the through hole 110.

The lead electrode 210 is connected to the light emitting diode chip 300. More specifically, the lead electrode 210 is connected to the light emitting diode chip 300 through the bump 400. That is, the lead electrode 210 directly contacts the bump 400, and the bump 400 can directly contact the light emitting diode chip 300. Here, the meaning of contact may be interpreted to include both bonding, bonding and bonding.

The lead electrode 210 may support the bump 400 and the LED chip 300. In addition, the lead electrode 210 may have a bent or curved shape.

The lead electrode 210 is arranged to overlap with the LED chip 300. That is, the lead electrode 210 overlaps with the light emitting diode chip 300 when viewed in a plan view.

The lead electrode 210 includes a first lead electrode 211 and a second lead electrode 212.

The first lead electrode 211 and the second lead electrode 212 are spaced apart from each other. The first lead electrode 211 and the second lead electrode 212 may be disposed in opposite directions to each other.

The wiring 220 is disposed on the insulating substrate 100. The wiring 220 may be bonded to the insulating substrate 100.

As shown in FIG. 4, an adhesive layer 910 may be disposed between the wiring 220 and the insulating substrate 100. The wiring 220 and the insulating substrate 100 can be bonded to each other by the adhesive layer.

The wiring 220 extends from the lead electrode 210 to the outside of the insulating substrate 100. The wiring 220 transmits an external electrical signal to the light emitting diode chip 300 through the bump 400.

In the present embodiment, the wiring 220 is shown as a simple structure for simply connecting the lead electrode 210 and the connection terminal 230, but the present invention is not limited thereto. For example, in order to protect the light emitting diode chip 300 Zener diodes, and the like.

The wiring 220 includes a first wiring 221 and a second wiring 222. The first wiring 221 extends from the first lead electrode 211. That is, the first lead electrode 211 extends from the first wiring 221. In addition, the second lead electrode 212 extends from the second wiring 222.

The first wiring 221 and the second wiring 222 may be disposed in directions opposite to each other.

The connection terminal 230 is disposed at an end of the wiring 220. The connection terminal 230 is connected to the wiring 220. The connection terminal 230 is disposed in an outer area of the insulating substrate 100. The connection terminal 230 is exposed to the outside, and is connected to an external printed circuit board (PCB) or the like.

The connection terminal 230 may have a cut side. At this time, the connection terminal 230 may be cut at the same time when the insulating substrate 100 is cut. That is, one side of the connection terminal 230 may be disposed on the same plane as one side of the insulating substrate 100.

The connection terminal 230 includes a first connection terminal 231 and a second connection terminal 232. The first connection terminal 231 is disposed at the end of the first wiring 221. The first connection terminal 231 is connected to the first wiring 221.

The second connection terminal 232 is disposed at the end of the second wiring 222. The second connection terminal 232 is connected to the second wiring 222.

The wiring 220, the connection terminal 230, and the lead electrode 210 are integrally formed. The wiring 220, the connection terminal 230, and the lead electrode 210 are made of a conductive material. That is, the wiring 220, the connection terminal 230, and the lead electrode 210 are a conductive pattern 200 integrally formed. Examples of the material used for the wiring 220, the connection terminal 230, and the lead electrode 210 include copper, aluminum, tungsten, and their alloys.

In particular, the conductive pattern 200 may be made of copper, and the insulating substrate 100 may be made of a polyimide resin. In such a case, since copper and polyimide resin have similar thermal expansion coefficients, cracks due to temperature changes do not occur between the conductive pattern 200 and the insulating substrate 100.

The light emitting diode chip 300 is disposed corresponding to the through hole 110. In more detail, the light emitting diode chip 300 is disposed corresponding to the lead electrode 210. The light emitting diode chip 300 is connected to the lead electrode 210. More specifically, the light emitting diode chip 300 is connected to the lead electrode 210 through the bump 400. That is, the light emitting diode chip 300 directly contacts the bump 400, and the bump 400 directly contacts the lead electrode 210 as described above, so that the light emitting diode chip 300 And is connected to the lead electrode 210.

The light emitting diode chip 300 may be a compound semiconductor such as GaAs, AlGaAs, GaN, InGaN, and InGaAlP, and may be mounted in a chip form.

The light emitting diode chip 300 may include a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer, a first electrode, and a second electrode.

The first conductive semiconductor layer may be an n-type semiconductor layer, and the first conductive semiconductor layer may be, for example, an n-type GaN layer.

The second conductive semiconductor layer may face the first conductive semiconductor layer and may be a p-type semiconductor layer. The second conductive semiconductor layer may be, for example, a p-type GaN layer.

The active layer is sandwiched between the first conductive type semiconductor layer and the second conductive type semiconductor layer. The active layer has a single quantum well structure or a multiple quantum well structure. The active layer may be formed of a period of an InGaN well layer and an AlGaN barrier layer, or a period of an InGaN well layer and a GaN barrier layer, and the light emitting material of the active layer may vary depending on an emission wavelength, for example, a blue wavelength, a red wavelength, .

The first electrode is connected to the first conductivity type semiconductor layer, and the second electrode is connected to the second conductivity type semiconductor layer. The first electrode and the second electrode may be disposed at various positions.

The bump 400 is disposed between the light emitting diode chip 300 and the lead electrode 210. The bump 400 directly contacts the light emitting diode chip 300 and the lead electrode 210. More specifically, the bump 400 is bonded to the light emitting diode chip 300 and the lead electrode 210. More specifically, the bump 400 is bonded to the first electrode and the second electrode.

At this time, the lead electrode 210 and the light emitting diode chip 300 can be bonded together by the pressure applied in the vertical direction with the bump 400 interposed therebetween. The first interface at which the lead electrode 210 and the bump 400 are in contact with each other faces the second interface at which the LED chip 300 and the bump 400 are in contact with each other, 2 interface.

The bumps 400 have a ball shape or a lump shape. More specifically, the bump 400 has a compressed ball shape. That is, the bump 400 may include a flat top surface and a flat bottom surface. That is, the bump 400 may have a plate shape having an upper surface and a lower surface. At this time, the upper surface of the bump 400 is in contact with the lead electrode 210, and the lower surface of the bump 400 is in contact with the LED chip 300. The thickness of the bump 400 is substantially equal to the distance between the lead electrode 210 and the LED chip 300.

The bump 400 includes a first bump 410 and a second bump 420.

The first bump 410 is bonded to the first lead electrode 211 and bonded to the LED chip 300. The first bump 410 may be bonded to the first electrode.

The second bump 420 is bonded to the second lead electrode 212 and bonded to the LED chip 300. The second bump 420 may be bonded to the second electrode.

At this time, the light emitting diode chip 300 may be a horizontal type LED chip or a vertical type LED chip. That is, the lower surface of the first bump 410 and the upper surface of the first electrode may be bonded together, and the lower surface of the second bump 420 and the upper surface of the second electrode may be bonded.

The bump 400 is a low-resistance conductor. Examples of the material used for the bump 400 include gold, silver, lead, copper, aluminum, and their alloys.

The heat dissipating unit 500 is disposed below the insulating substrate 100. The heat dissipation unit 500 is disposed corresponding to the light emitting diode chip 300. The heat dissipation unit 500 may be in direct contact with the light emitting diode chip 300. The heat dissipation unit 500 may include a groove corresponding to the light emitting diode chip 300.

The heat dissipation unit 500 dissipates heat generated from the light emitting diode chip 300 to the outside. The heat dissipation unit 500 includes a resin having a high thermal conductivity, a metal, a ceramic, or the like. Examples of the material used for the heat dissipation unit 500 include aluminum or epoxy resin.

As shown in FIG. 4, the heat dissipation unit 500 may be bonded to the insulating substrate 100. That is, the heat dissipating unit 500 may be bonded to the insulating substrate 100 by an adhesive layer 920 interposed between the insulating substrate 100 and the heat dissipating unit 500.

The heat dissipation unit 500 may be bonded to the light emitting diode chip 300. That is, an adhesive layer 930 is interposed between the heat dissipation unit 500 and the light emitting diode chip 300, and the heat dissipation unit 500 and the light emitting diode can be adhered to each other by the adhesive layer.

The heat dissipation unit 500 may include a heat dissipation fin, a heat sink, or a heat dissipation plate.

The solder resist 600 covers the wiring 220. The solder resist 600 is disposed on the insulating substrate 100. The solder resist 600 covers the wiring 220 so as to expose the through hole 110 and the connection terminal 230.

The solder resist 600 is an insulating layer, and the wiring 220 is insulated. In addition, the solder resist 600 protects the wiring 220 from foreign matter, moisture, or the like.

The lens unit 700 is disposed on the insulating substrate 100. The lens unit 700 is disposed on the light emitting diode chip 300. The lens unit 700 improves the characteristics of light emitted from the LED chip 300.

As shown in FIG. 4, the light emitting diode package according to the embodiment may further include a light conversion layer 800. The light conversion layer 800 may include a phosphor. The light conversion layer 800 converts the color of light emitted from the light emitting diode chip 300.

For example, the light emitting diode chip 300 may be a blue light emitting diode chip that generates blue light, and the light converting layer 800 may include a yellow phosphor. Accordingly, the light emitting diode package according to the embodiment can emit white light.

The light conversion layer 800 is disposed inside the through hole 110. The light conversion layer 800 is filled in the through hole 110. The light conversion layer 800 is disposed corresponding to the open region OR. The light conversion layer 800 may surround the light emitting diode chip 300.

In the light emitting diode package according to the embodiment, the lead electrode 210 and the light emitting diode chip 300 are connected by the bump 400. The bump 400 has a higher contact characteristic, i.e., a lower resistance, than a conventional wire. In addition, the bumps 400 can more easily prevent shorting than conventional wires.

Particularly, since the bump 400 has a pressed ball shape, it has a much lower resistance than a conventional wire. That is, an electric signal for driving the light emitting diode chip 300 is transmitted from the lead electrode 210 to the LED chip 300 through a path corresponding to the thickness of the bump 400. At this time, since the thickness of the bump 400 is much smaller than the length of a conventional wire, the resistance between the LED chip 300 and the lead electrode 210 is very low.

Accordingly, the light emitting diode package according to the embodiment has improved electrical characteristics and high reliability.

Since the insulating substrate 100 is flexible, the light emitting diode package according to the embodiment can be flexible. Accordingly, the light emitting diode package according to the embodiment can be modified into various forms. In addition, since the light emitting diode package according to the embodiment is flexible, it can be easily installed in an external device such as a printed circuit board.

The light emitting diode package according to the embodiment can be manufactured by the following method.

As shown in FIG. 5, an insulating sheet 101 having a plurality of holes and a plurality of light emitting diode chips 300 are disposed on the support 10. A conductive pattern layer 201 including a plurality of lead electrodes 210, a plurality of wirings 220 and a plurality of connection terminals 230 is formed on the insulating sheet 101. In addition, a ball-shaped bump 400 is disposed between each LED chip 300 and each lead electrode 210.

Thereafter, pressure and / or heat is applied to the respective LED chips 300 and the respective lead electrodes 210 in the vertical direction by a gang (20) as a compression tool, and each of the LED chips 300, each lead electrode 210 and each bump 400 are bonded to each other.

Thereafter, a solder resist layer is formed on the conductive pattern layer 201, and a plurality of heat dissipation units 500 are bonded under the insulating sheet 101. Further, a plurality of lens parts 700 are disposed on the insulating sheet 101. [

Thereafter, the insulating sheet 101, the solder resist layer, and the conductive pattern layer 201 are cut at a time to form a plurality of light emitting diode packages. That is, the insulating sheet 101, the solder resist layer, and the conductive pattern layer 201 are cut to form the insulating substrate 100, the solder resist 600, and the conductive pattern 200 Emitting diode packages are formed. The solder resist 600, the conductive pattern 200 and the insulating substrate 100 may have the same cut surface because the solder resist layer, the conductive pattern 200 and the insulating sheet 101 are cut at a time have. That is, one side of the solder resist 600, one side of the connection terminal 230, and one side of the insulating substrate 100 are arranged in the same plane.

In this way, by a single pressing process and a cutting process, a plurality of light emitting diode packages can be manufactured at one time.

In addition, since the insulating substrate 100 is flexible, that is, the insulating sheet 101 is flexible, the insulating sheet 101 can be provided in a manufacturing process while being wound on a reel, a roller, or the like. Therefore, the insulating sheet 101 wound around a reel or a roller can be provided to the support stand 10 and the gang 20 while being unwound.

The light emitting diode package according to the embodiment does not require a process for connecting wires.

As described above, the light emitting diode package according to the embodiment can be easily manufactured and can be manufactured in a large quantity.

Therefore, the light emitting diode package according to the embodiment has high productivity.

In addition, the features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

1 is an exploded perspective view illustrating a light emitting diode package according to an embodiment.

2 is a plan view showing a state in which a lead electrode and a light emitting diode chip are connected.

3 is a cross-sectional view showing a section taken along line A-A in Fig.

4 is an exploded perspective view illustrating a light emitting diode package according to another embodiment.

5 is a view showing a process of bonding the lead electrode and the light emitting diode.

Claims (13)

An insulating substrate; A wiring disposed on the insulating substrate; A lead electrode formed integrally with the wiring, the lead electrode including a first lead electrode and a second lead electrode extending from the wiring; A bump directly contacting the lead electrode; A light emitting element that is in direct contact with the bump; And And a heat dissipating unit disposed below the insulating substrate and having a groove corresponding to the light emitting device, Wherein the light emitting element is disposed on a groove of the heat dissipating portion, the light emitting element is in direct contact with the heat dissipating portion, The bump includes a first bump and a second bump, Wherein the first bump connects the first lead electrode and the light emitting element, and the second bump connects the second lead electrode and the light emitting element. The light emitting device package according to claim 1, wherein the light emitting element is disposed corresponding to a hole formed in the insulating substrate. The light emitting device package according to claim 1, wherein the bumps have a ball shape. The light emitting device package according to claim 1, wherein a first interface at which the bump and the lead electrode are in contact with each other and a second interface at which the bump and the light emitting device are in contact with each other face each other. The light emitting device package according to claim 1, comprising an insulating layer disposed on the wiring. delete An insulating substrate on which a through hole is formed; A conductive pattern disposed on the insulating substrate; A light emitting chip disposed corresponding to the through hole and connected to the conductive pattern; A bump disposed between the conductive pattern and the light emitting chip and directly bonded to the conductive pattern and the light emitting chip; And And a heat dissipation unit disposed below the insulating substrate and having a groove corresponding to the light emitting device, Wherein the light emitting element is disposed on a groove of the heat dissipation unit, An adhesive layer is disposed between the heat dissipating portion, the light emitting element, and the insulating substrate, Wherein the bump includes a first bump and a second bump, the first bump is bonded to a first electrode of the light emitting chip, and the second bump is bonded to a second electrode of the light emitting chip. 8. The light emitting device package according to claim 7, wherein the insulating substrate is flexible. The light emitting device package according to claim 7, wherein the insulating substrate comprises polyimide, and the conductive pattern comprises copper. The light emitting device package according to claim 7, comprising a fluorescent layer disposed corresponding to the through hole. delete 8. The light emitting device package according to claim 7, further comprising a solder resist covering the conductive pattern and disposed on the insulating substrate. The light emitting device package according to claim 7, wherein a side surface of the conductive pattern is disposed in the same plane as the side surface of the insulating substrate.

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