KR101448870B1 - Method for fabricating nano/micro hybrid structure - Google Patents

Abstract

The present invention relates to a method of manufacturing a nano / micro hybrid structure, and a method of manufacturing a nano / micro hybrid structure according to the present invention includes: a first pattern layer laminating step of laminating a first pattern layer on a substrate; Applying a nanomask comprising a nanomaterial on the first pattern layer; A second pattern layer laminating step of laminating a second pattern layer on the first pattern layer and the nano-mask; An aligning step of aligning a micromask having a pattern width of a microscale above the second pattern layer; And simultaneously patterning the nanopatterns and the micropatterns in the first pattern layer and the second pattern layer using the nanomask and the micromask.
Therefore, according to the present invention, there is provided a method of manufacturing a nano / micro hybrid structure which can easily fabricate a hybrid structure in which a nanoscale structure and a microscale structure are mixed through a single patterning process.

Description

METHOD FOR FABRICATING NANO / MICRO HYBRID STRUCTURE [0002]

The present invention relates to a method of manufacturing a nano / micro hybrid structure, and more particularly, to a method of manufacturing a nano / micro hybrid structure capable of easily manufacturing a nano / micro hybrid structure.

Nano Technology (NT) is attracting attention as a new paradigm that will lead the 21st century industry development along with information technology (IT) and biotechnology (BT).

In addition, nanotechnology is a fusion of various science and technology fields such as physics, chemistry, biology, electronics, and materials engineering, overcoming the limitations of existing technologies and providing technological innovation in various industrial fields, .

Patterns having a size from several nanometers to several hundred nanometers are applied to many applications such as nanomemory, biosensors, bio-applications including cell growth, high-efficiency displays using photonic crystals, and various photoelectric elements including solar cells have.

For example, hundreds of nanometers to hundreds of nanometers or pillar structures can be applied to nanomemories, and photonic crystal structures of hundreds of nanometers can be applied to enhance the external light efficiency of OLEDs (LEDs).

In recent years, studies on the moth-eye, gecko feet, and lotus have been actively researched.

The moth-eye structure of the moth has an excellent effect for preventing reflection, and thus can be applied to various fields. The conventional antireflection coating has been mainly used for continuous thin film coating of a low refractive index material. However, the continuous thin film coating method has a limitation in selection of materials, and it is disadvantageous in that the uniform thin film is not easily manufactured and the number of steps is large.

In recent years, studies have been made to improve the light efficiency by reducing the glare phenomenon caused by reflection of external light by preventing the reflection of light by applying a moth-eye structure having a micro-nano composite pattern to a monitor or the like.

Such an antireflection structure can be applied to many fields such as industrial and home glass including automotive instrument panel, and when applied to a solar cell, a high efficiency solar cell with high light efficiency can be manufactured.

As a technique for forming such a micro-nanocomposite pattern, electron beam lithography, EUV patterning, interference lithography, nano imprint, soft lithography, It is applicable. However, this method requires expensive equipment, and it is difficult to pattern the large area at a time.

In recent years, a bottom-up patterning technique such as block copolymer patterning using a self-assembly, nanosphere lithography, and anodic aluminum oxide has been attracting attention.

This method does not require costly equipment, and it is possible to perform parallel patterning on a substrate at a time, which is advantageous in productivity because the processing speed is high. However, it is difficult to control the pattern size arbitrarily and the repetitive productivity to produce the same structure is lowered. In particular, existing methods have difficulty in managing defects and are difficult to apply to large areas.

In addition, the pattern duplication process such as the imprint process can be produced at low cost with only one original mold, but it is difficult to manufacture the original mold and the production cost is high.

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a nano / micro hybrid structure manufacturing method capable of easily fabricating a hybrid structure in which a nanoscale structure and a microscale structure are mixed through only a single process exposure .

This object is solved according to the present invention by a method of manufacturing a semiconductor device, comprising: a first pattern layer laminating step of laminating a first pattern layer on a substrate; Applying a nanomask comprising a nanomaterial on the first pattern layer; A second pattern layer laminating step of laminating a second pattern layer on the first pattern layer and the nano-mask; An aligning step of aligning a micromask having a pattern width of a microscale above the second pattern layer; And patterning the nano patterns and the micro patterns on the first pattern layer and the second pattern layer simultaneously using the nano mask and the micromask. Lt; / RTI >

The method may further include removing the nanomask from the first pattern layer.

In addition, the nano-mask may be coated with one of nanoparticles, carbon nanotubes (CNTs), and nanowires on the first pattern layer.

In addition, the nanomask may have a carbon nanotube (CNT) network structure.

The first pattern layer is a negative photoresist and the second pattern layer is a positive photoresist. In the patterning step, the first pattern layer and the second pattern layer are formed by ultraviolet light Can be exposed.

In addition, the first pattern layer and the second pattern layer may be positive photoresists, and the first pattern layer and the second pattern layer may be exposed to ultraviolet light in the patterning step.

According to the present invention, there is provided a method of manufacturing a nano / micro hybrid structure capable of easily fabricating a nano / micro hybrid structure by a single exposure or etching process.

1 is a process flow diagram of a method of manufacturing a nano / micro hybrid structure according to a first embodiment of the present invention,
2 schematically illustrates a first pattern layer laminating step of the nano / micro hybrid structure manufacturing method of FIG. 1,
3 schematically illustrates a nano-mask application step of the method of manufacturing the nano / micro hybrid structure of FIG. 1,
4 schematically illustrates a second pattern layer laminating step of the nano / micro hybrid structure manufacturing method of FIG. 1,
Figure 5 schematically illustrates an alignment step of the method of manufacturing the nano / micro hybrid structure of Figure 1,
FIG. 6 is a schematic view of a patterning step of the method of manufacturing the nano / micro hybrid structure of FIG. 1,
FIG. 7 is a schematic view of a patterning step according to a modification of the nano / micro hybrid structure manufacturing method of FIG. 1,
FIG. 8 is a schematic illustration of the removal step of the method of manufacturing the nano / micro hybrid structure of FIG. 1,
FIG. 9 is a schematic view illustrating a nano-mask application step in the method of manufacturing a nano / micro hybrid structure according to a second embodiment of the present invention.

Prior to the description, components having the same configuration are denoted by the same reference numerals as those in the first embodiment. In other embodiments, configurations different from those of the first embodiment will be described do.

Hereinafter, a method (S100) for manufacturing a nano / micro hybrid structure according to a first embodiment of the present invention will be described in detail with reference to the accompanying drawings.

1 is a process flow diagram of a method of manufacturing a nano / micro hybrid structure according to a first embodiment of the present invention.

Referring to FIG. 1, a method (S100) for manufacturing a nano / micro hybrid structure according to a first embodiment of the present invention is a method for easily fabricating a nano / micro hybrid structure by a single patterning process, Layer stacking step S110, the nano-mask applying step S120, the second pattern layer laminating step S130, the aligning step S140, the patterning step S150, and the removing step S160.

2 schematically illustrates a first pattern layer laminating step of the method of manufacturing the nano / micro hybrid structure of FIG.

Referring to FIG. 1, the first pattern layer laminating step (S110) is a step of laminating the first pattern layer 120 on the substrate 110.

The substrate 110 is made of a material which is not patterned in a patterning step (S150) to be described later, and a silicon (Si) substrate is used in the present embodiment, but the present invention is not limited thereto.

Also, in this embodiment, the first pattern layer 120 uses either a positive photoresist or a negative photoresist to be used.

Any one of AZ® 1505, 1512HS, 1514H, 1518, AZ® 6612, 6624, 6632 may be used as the positive photoresist and any one of AZ® nLOF 2020, 2035, Can be used.

On the other hand, it is preferable to select the first pattern layer 120 in consideration of the region of the positive photoresist or the negative photoresist to be patterned in the patterning step (S150) described later.

3 schematically illustrates a nano-mask application step of the method of manufacturing the nano / micro hybrid structure of FIG.

3, the nano-mask applying step S120 is a step of forming a nano-mask 130 to serve as a mask of the first pattern layer 120 in a patterning step (S150) 120).

Meanwhile, in this embodiment, nanosized nanosized nanoparticles or one-dimensional nanomaterials such as carbon nanotubes (CNTs) and nanowires are uniformly arranged on the first pattern layer 120 A nano mask 130 may be constructed.

4 schematically shows a second pattern layer laminating step of the method of manufacturing the nano / micro hybrid structure of FIG.

4, the second pattern layer laminating step S130 is a step of laminating the first pattern layer 120 and the second pattern layer 140 on the upper side of the nanomask 130. Referring to FIG.

In this step, the exposed regions of the nano mask 130 and the first pattern layer 120 are all stacked on the second pattern layer 140. In this embodiment, the second pattern layer 140 is preferably laminated with a positive photoresist.

FIG. 5 schematically shows an alignment step of the method of manufacturing the nano / micro hybrid structure of FIG.

5, the aligning step S140 may include the step of aligning the micromask 150 to the second pattern layer 140 in order to pattern the first pattern layer 120 and the second pattern layer 140 in a microscale pattern, (140).

On the other hand, in order to fabricate a nano / micro hybrid pattern, it is preferable that a pattern having a width of a micro scale larger than the width of particles constituting the nano mask 130 described above is formed in the micromask 150 Do.

FIG. 6 schematically illustrates a patterning step of the method of manufacturing the nano / micro hybrid structure of FIG.

As shown in FIG. 6, the patterning step S150 is a step of fabricating a nano / micro hybrid structure by patterning the first pattern layer 120 and the second pattern layer 140.

First, ultraviolet light (UV) is irradiated toward the micromask 150 aligned on the second pattern layer 140. The ultraviolet light UV passes through the micromask 150 to expose the second pattern layer 140 in a pattern corresponding to the micromask 150 and then passes through the nanomask 130 to form a pattern corresponding to the nanomask The first pattern layer 120 is exposed to pattern the nano / micro hybrid structure 100.
That is, the micro pattern is patterned by the micromask 150 in the second pattern layer 140, and the nano pattern is patterned by the nano mask 130 in the first pattern layer 120.
Here, the process of patterning the nano / micro hybrid structure 100 through one exposure is defined as "simultaneously" forming a nanopattern and a micropattern.

That is, the second pattern layer 140 forms a microscale pattern by the micromask 150, and the first pattern layer 120, which is disposed below the second pattern layer 140, Thereby forming a nano / micro hybrid structure 100 in a comprehensive manner.

FIG. 7 schematically illustrates a patterning step according to a modification of the nano / micro hybrid structure manufacturing method of FIG. 1;

As shown in FIG. 6, when the first pattern layer 120 is laminated with the positive photoresist, only the first pattern layer 120 stacked on the lower region of the nano mask 130 is patterned so as to remain. As shown in the figure, when the first pattern layer 120 is laminated with a negative photoresist, the first pattern layer 120 laminated on the lower region of the nanomask 130, that is, ultraviolet light (UV) Only the unreacted regions are selectively removed to form a nanoscale pattern.

In this embodiment, the patterning step S150 is performed by exposure, but not limited thereto, the first pattern layer 120 and the second pattern layer 130 may be removed by an etching process.

8 schematically illustrates a removal step of the method of manufacturing the nano / micro hybrid structure of FIG.

8, the removing step S160 is a step of removing the nanomask 130 applied on the first pattern layer 120 after the exposure is completed. In this step, the nano / micro hybrid structure (100) is finally manufactured.

Therefore, according to the present invention, a hybrid type structure in which a pattern having a nanoscale width and a pattern having a microscale width are fused can be easily manufactured by a single patterning process including an exposure or etching process.

Next, a method of manufacturing a nano / micro hybrid structure (S200) according to a second embodiment of the present invention will be described.

The method 200 for fabricating a nano / micro hybrid structure according to the second embodiment of the present invention includes a first pattern layer laminating step S110, a nano mask applying step S220, a second pattern layer laminating step S130, (S140), a patterning step (S150), and a removing step (S160).

However, in this embodiment, the first pattern layer laminating step S110, the second pattern layer laminating step S130, the aligning step S140, the patterning step S150, and the removing step S160 are the same as those in the first embodiment Since it is the same as one process, the duplicate explanation is omitted.

FIG. 9 is a schematic view illustrating a nano-mask application step in the method of manufacturing a nano / micro hybrid structure according to a second embodiment of the present invention.

As shown in FIG. 9, in the present embodiment, the nanomask applying step S220 forms a CNT network on the first pattern layer 120, unlike the first embodiment. Thereby forming a nano mask 130. [

That is, carbon nanotubes (CNT) that are not uniformly aligned on the first pattern layer 120 are laminated to fabricate a nanomask 130 having a nanoscale width.

The scope of the present invention is not limited to the above-described embodiments, but may be embodied in various forms of embodiments within the scope of the appended claims. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the appended claims.

110: substrate 120: first patterned layer
130: nano mask 140: second pattern layer
150: micromask

Claims (6)

A first pattern layer laminating step of laminating a first pattern layer on a substrate;
Applying a nanomask comprising a nanomaterial on the first pattern layer;
A second pattern layer laminating step of laminating a second pattern layer on the first pattern layer and the nano-mask;
An aligning step of aligning a micromask having a pattern width of a microscale above the second pattern layer;
And patterning the nano patterns and the micro patterns on the first pattern layer and the second pattern layer using the nano mask and the micromask, respectively. The method according to claim 1,
And removing the nanomask from the first pattern layer. ≪ RTI ID = 0.0 > 8. < / RTI > 3. The method of claim 2,
Wherein the nanomask is formed by applying one of nanoparticles, carbon nanotubes (CNT), and nanowires on the first pattern layer. 3. The method of claim 2,
Wherein the nanomask has a carbon nanotube (CNT) network structure. 5. The method according to any one of claims 1 to 4,
Wherein the first pattern layer is a negative photoresist and the second pattern layer is a positive photoresist,
Wherein the first pattern layer and the second pattern layer are exposed to ultraviolet light in the patterning step. 5. The method according to any one of claims 1 to 4,
Wherein the first pattern layer and the second pattern layer are positive photoresists,
Wherein the first pattern layer and the second pattern layer are exposed to ultraviolet light in the patterning step.

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