KR101358940B1 - 다공성 표면층을 가지는 나피온 막 및 그 제조 방법 - Google Patents
다공성 표면층을 가지는 나피온 막 및 그 제조 방법 Download PDFInfo
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- KR101358940B1 KR101358940B1 KR1020120059231A KR20120059231A KR101358940B1 KR 101358940 B1 KR101358940 B1 KR 101358940B1 KR 1020120059231 A KR1020120059231 A KR 1020120059231A KR 20120059231 A KR20120059231 A KR 20120059231A KR 101358940 B1 KR101358940 B1 KR 101358940B1
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- 239000012528 membrane Substances 0.000 title claims abstract description 158
- 229920000557 Nafion® Polymers 0.000 title claims abstract description 108
- 239000002344 surface layer Substances 0.000 title claims abstract description 84
- 238000000034 method Methods 0.000 title claims abstract description 29
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- RFFLAFLAYFXFSW-UHFFFAOYSA-N 1,2-dichlorobenzene Chemical group ClC1=CC=CC=C1Cl RFFLAFLAYFXFSW-UHFFFAOYSA-N 0.000 claims description 33
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 claims description 32
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- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 6
- 238000009835 boiling Methods 0.000 claims description 6
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- ZPQOPVIELGIULI-UHFFFAOYSA-N 1,3-dichlorobenzene Chemical compound ClC1=CC=CC(Cl)=C1 ZPQOPVIELGIULI-UHFFFAOYSA-N 0.000 claims description 3
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- 125000000129 anionic group Chemical group 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 16
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Abstract
Description
도 2는 도 1에서의 다공성 표면층을 가지는 나피온 막에 촉매층이 형성되는 것을 나타내는 개략도이다.
도 3은 도 2에서의 다공성 표면층 기공을 확대하여 나타내는 것으로서, 생성물인 물의 역확산이 증가되는 것을 설명하는 개략도이다.
도 4는 본 발명의 다른 구현예에서, 다공성 표면층을 가지는 나피온 막 2개를 적층하는 과정을 나타내는 개략도이다.
도 5는 본 발명의 또 다른 구현예에서 다공성 표면층에 촉매층이 형성된 나피온 막 2개를 적층하는 과정을 나타내는 개략도이다.
도 6은 본 발명의 실시예에 따른 다공성 표면층을 가지는 나피온 막을 나타내는 SEM 사진으로서, 도 6a는 ODB가 140mg인 경우이고, 도 6b는 ODB가 220mg인 경우이다.
㎎(ODB)/㎖ (나피온분산액) |
제조 방법 | 막 외관 | 두께(㎛) |
0 | 캐스팅 | 투명 | 23 |
40 | 캐스팅 | 투명 | 얻어지지 않음 |
80 | 캐스팅 | 투명 | 얻어지지 않음 |
140 | 캐스팅 | 불투명 | 26±1.7 |
160 | 캐스팅 | 불투명 | 29.5±2.4 |
180 | 캐스팅 | 불투명 | 29.6±1.6 |
200 | 캐스팅 | 불투명 | 31.8±2.8 |
220 | 캐스팅 | 불투명 | 37.3±2.7 |
280 | 캐스팅 | 불투명, 핀홀 | 얻어지지 않음 |
320 | 캐스팅 | 불투명, 핀홀 | 얻어지지 않음 |
360 | 캐스팅 | 불투명, 핀홀 | 얻어지지 않음 |
415 | 불투명 캐스팅 용액, 캐스팅 되지 않음 | - | - |
20: 다공성 표면층
30: 촉매층
Claims (16)
- 표면층 및 상기 표면층의 하부에 존재하는 하부 층으로 이루어지는 술폰화 테트라플루오르에틸렌 막으로서,
상기 표면층은 다공성 층이고,
상기 하부층은 기공이 없는 조밀한 층이며,
상기 표면층의 다공성 층은 비용매를 사용하는 용매 증발법에 의하여 제조되는 것을 특징으로 하는 다공성 표면층을 가지는 술폰화 테트라플루오르에틸렌 막. - 제 1 항에 있어서,
상기 술폰화 테트라플루오르에틸렌 막의 다공성 표면층; 또는 다공성 표면층 및 하부층;에 촉매층이 더 형성되는 것을 특징으로 다공성 표면층을 가지는 술폰화 테트라플루오르에틸렌 막. - 표면층 및 상기 표면층의 하부에 존재하는 하부 층으로 이루어지는 술폰화 테트라플루오르에틸렌 막으로서,
상기 표면층은 다공성 층이고,
상기 하부층은 기공이 없는 조밀한 층이며,
상기 술폰화 테트라플루오르에틸렌 막은 술폰화 테트라플루오르에틸렌 막의 양측 표면에 다공층이 형성되는 것을 특징으로 하는 다공성 표면층을 가지는 술폰화 테트라플루오르에틸렌 막. - 표면층 및 상기 표면층의 하부에 존재하는 하부 층으로 이루어지는 술폰화 테트라플루오르에틸렌 막으로서,
상기 표면층은 다공성 층이고,
상기 하부층은 기공이 없는 조밀한 층이며,
상기 술폰화 테트라플루오르에틸렌 막의 표면층에 이온 전도성 고분자 막이 더 형성되는 것을 특징으로 하는 다공성 표면층을 가지는 술폰화 테트라플루오르에틸렌 막. - 제 4 항에 있어서,
상기 이온 전도성 고분자 막은, 상기 술폰화 테트라플루오르에틸렌 막의 술폰화 테트라플루오르에틸렌과 이온 교환 용량이 다른 제 2 술폰화 테트라플루오르에틸렌 막, 술폰화하이드로카본계 고분자 막 또는 음이온 전도성 고분자 막인 것을 특징으로 하는 다공성 표면층을 가지는 술폰화 테트라플루오르에틸렌 막. - 표면층 및 상기 표면층의 하부에 존재하는 하부 층으로 이루어지는 술폰화 테트라플루오르에틸렌 막으로서,
상기 표면층은 다공성 층이고,
상기 하부층은 기공이 없는 조밀한 층이며,
상기 술폰화 테트라플루오르에틸렌 막 2개가 적층된 구조를 가지되, 조밀한 하부 층이 서로 마주보도록 적층되는 것을 특징으로 하는 다공성 표면층을 가지는 술폰화 테트라플루오르에틸렌 막. - 제 1 항에 있어서,
상기 술폰화 테트라플루오르에틸렌 막은 연료전지, 센서, 전해조, 가스 분리막 또는 가습기에 사용되는 것을 특징으로 하는 다공성 표면층을 가지는 술폰화 테트라플루오르에틸렌 막. - 용매 증발 법을 이용하여 다공성 표면층을 가지는 술폰화 테트라플루오르에틸렌 막을 제조하는 방법으로서,
술폰화 테트라플루오르에틸렌 및 용매로 이루어지는 술폰화 테트라플루오르에틸렌 분산액에 비용매를 첨가하여 캐스팅 용액을 제조하는 단계;
상기 캐스팅 용액을 기판에 도포하는 단계; 및
용매를 증발시키는 단계를 포함하는, 다공성 표면층을 가지는 술폰화 테트라플루오르에틸렌 막을 제조하는 방법. - 제 8 항에 있어서,
상기 용매는 비용매보다 끓는점이 낮은 것을 특징으로 하는 방법. - 제 9 항에 있어서,
상기 비용매는 오쏘-디클로로벤젠(o-dichlorobenzene), 메타-디클로로벤젠(m-dichlorobenzene), 파라-디클로로벤젠(p-dichlorobenzene), 나프탈렌, 또는 알파-나프톨인 것을 특징으로 하는 방법. - 제 10 항에 있어서,
상기 비용매는 오쏘-디클로로벤젠이고, 나피온 분산액 1ml에 대하여 140mg 내지 280mg 으로 함유되는 것이고, 상기 나피온 분산액은 20wt% 나피온 및 80wt% 용매로 이루어지고, 상기 용매는 20wt% 물 및 80wt% 알코올로 이루어지는 것을 특징으로 하는 방법. - 제 8 항에 있어서,
술폰화 테트라플루오르에틸렌 막의 다공성 표면층; 또는 다공성 표면층 및 하부층;에 촉매층을 더 형성하는 것을 특징으로 하는 방법. - 제 8 항에 있어서,
술폰화 테트라플루오르에틸렌 막의 양측 표면에 다공층을 형성하는 것을 특징으로 하는 방법. - 제 8 항에 있어서,
술폰화 테트라플루오르에틸렌 막의 표면층에 이온 전도성 고분자 막을 더 형성하는 것을 특징으로 하는 방법. - 제 14 항에 있어서,
상기 이온 전도성 고분자 막은, 상기 술폰화 테트라플루오르에틸렌 막의 술폰화 테트라플루오르에틸렌과 이온 교환 용량이 다른 제 2 술폰화 테트라플루오르에틸렌 막, 술폰화하이드로카본계 고분자 막 또는 음이온 전도성 고분자 막인 것을 특징으로 하는 방법. - 제 8 항 또는 제 12 항에 있어서,
상기 제조된 술폰화 테트라플루오르에틸렌 막 2개를 적층하되, 조밀한 하부 층이 마주보도록 적층하는 단계를 더 포함하는 것을 특징으로 하는 방법.
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