KR101337612B1 - Light emitting diode with improved light extraction efficiency - Google Patents

Abstract

A light emitting diode having improved light extraction efficiency is disclosed. This light emitting diode includes: a substrate; A light emitting structure on the substrate, the light emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; A first electrode pad electrically connected to the first conductivity type semiconductor layer; A second electrode pad positioned on the substrate; An insulating reflective layer covering a portion of the light emitting structure, positioned below the second electrode pad, spaced apart from the light emitting structure, having an area larger than that of the second electrode pad, and reflecting light from the light emitting structure; At least one upper extension connected to the second electrode pad and electrically connected to the second conductivity type semiconductor layer; And a pattern of light extracting elements positioned on the second conductive semiconductor layer. Accordingly, the current extraction performance can be improved, and light loss caused by the electrode pad can be prevented and the light emission performance can be improved to improve light extraction efficiency.

Description

LIGHT EMITTING DIODE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY

The present invention relates to light emitting diodes, and more particularly to light emitting diodes having improved light extraction efficiency.

Since the development of gallium nitride (GaN) -based light emitting diodes, GaN-based LEDs have been used in various applications such as color LED display devices, LED traffic signals, and white LEDs.

Gallium nitride based light emitting diodes are generally formed by growing epitaxial layers on a substrate such as sapphire and include an N-type semiconductor layer, a P-type semiconductor layer, and an active layer interposed therebetween. Meanwhile, an N-electrode pad is formed on the N-type semiconductor layer, and a P-electrode pad is formed on the P-type semiconductor layer. The light emitting diode is electrically connected to and driven by an external power source through the electrode pads. At this time, current flows from the P-electrode pad to the N-electrode pad through the semiconductor layers.

In general, since the P-type semiconductor layer has a high specific resistance, current is not evenly distributed in the P-type semiconductor layer, the current is concentrated in the portion where the P-electrode pad is formed, and the current flows intensively through the corners. Is generated. Current crowing leads to a reduction of the light emitting area, which in turn lowers the light emitting efficiency. In order to solve this problem, a technique of forming a transparent electrode layer having a low specific resistance on the P-type semiconductor layer to achieve current dispersion is used. Since the current flowing from the P-electrode pad is dispersed in the transparent electrode layer and flows into the P-type semiconductor layer, the light emitting area of the light emitting diode can be widened. However, since the transparent electrode layer absorbs light, its thickness is limited, and thus there is a limit in current dispersion. In particular, current distribution using a transparent electrode layer is limited in a large area light emitting diode of about 1 mm 2 or more used for high power.

On the other hand, extensions extending from the electrode pads are used to help distribute current in the light emitting diode. For example, U.S. Patent No. 6,650,018 discloses that electrode contacts 117, 127, i.e., a plurality of extensions from electrode pads extend in opposite directions to enhance current dispersion. By using such a plurality of extensions, the current can be distributed over a wide area of the light emitting diode, but a current density phenomenon in which current is concentrated is still present at the portion where the electrode pads are located.

Furthermore, as the size of the light emitting diode becomes larger, the probability that defects are included in the light emitting diode increases. For example, defects such as threading dislocations, pinholes, and the like, provide passages through which current flows rapidly, thereby preventing current dispersion.

Meanwhile, a patterned sapphire substrate is generally used to improve light extraction efficiency of a light emitting diode. The pattern on the sapphire substrate reduces the loss of light in the light emitting diode by total internal reflection by scattering or reflecting the light generated in the active layer, thereby improving the light extraction efficiency.

Although light extraction efficiency is expected to be improved by using a pattern on a sapphire substrate, there is still a possibility that light is lost inside the light emitting diode due to total internal reflection because the refractive index of the gallium nitride compound semiconductor is relatively high.

Moreover, since the electrode pads are generally formed of a metal material which absorbs light, light directed to the electrode pads is absorbed and lost by the electrode pads.

Therefore, efforts to improve the light extraction efficiency continue to be demanded.

U.S. Patent No. 6,650,018

The problem to be solved by the present invention is to provide a light emitting diode having an improved light extraction efficiency.

Another object of the present invention is to provide a light emitting diode that can prevent the current dense phenomenon from occurring near the electrode pad.

Another object of the present invention is to provide a light emitting diode that can evenly distribute current in a large area light emitting diode.

Another object of the present invention is to provide a light emitting diode that can reduce the light loss caused by the electrode pad.

In order to solve the above problems, a light emitting diode according to embodiments of the present invention, a substrate; A light emitting structure on the substrate, the light emitting structure comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; A first electrode pad electrically connected to the first conductivity type semiconductor layer; A second electrode pad positioned on the substrate; An insulating reflective layer covering a portion of the light emitting structure and positioned below the second electrode pad to separate the second electrode pad from the light emitting structure; At least one upper extension part connected to the second electrode pad and electrically connected to the second conductivity type semiconductor layer; And a pattern of light extraction elements positioned on the second conductive semiconductor layer.

The insulating reflective layer has a larger area than the second electrode pad.

Since the second electrode pad is spaced apart from the light emitting structure by the insulating reflective layer, current concentration can be improved by preventing current from being concentrated around the second electrode pad, and further, the light traveling to the second electrode pad can be improved. Can be reflected to reduce light loss by the second electrode pads. Further, by disposing the pattern of the light extraction elements on the second conductive semiconductor layer opposite to the substrate side, the light can be easily emitted to the outside by the pattern of the light extraction elements, thereby improving the light extraction efficiency. The pattern of light extraction enzymes can be used in combination with a pattern formed on a substrate, such as a sapphire substrate.

Here, although not particularly limited, the first conductivity type semiconductor layer may be an n-type nitride semiconductor layer, and the second conductivity type semiconductor layer may be a p-type nitride semiconductor layer. In addition, the light emitting diode may further include a transparent electrode layer positioned on the p-type nitride semiconductor layer, and the upper extension part may be connected to the transparent electrode layer.

In some embodiments, the pattern of light extraction elements can be formed on the transparent electrode layer. For example, the pattern of light extraction elements may be formed by patterning an upper portion of the transparent electrode layer.

The light emitting diode may further include an insulating layer covering the transparent electrode layer. In this case, the insulating layer may have an opening exposing the transparent electrode layer, and the upper extension may be connected to the transparent electrode layer through the opening.

Further, the opening is located away from the second electrode pad. Accordingly, the upper extension part connected to the second electrode pad and the opening part is connected by a connection part positioned on the insulating layer. Since the connection portion is located on the insulating layer, the upper extension portion is not directly connected to the transparent electrode layer around the second electrode pad, thus further preventing the current from being concentrated around the second electrode pad.

In some embodiments, the pattern of light extraction elements can be formed on the insulating layer. For example, the pattern of light extraction elements may be formed by patterning an upper portion of the insulating layer.

The first conductivity type semiconductor layer may have a region in which the second conductivity type semiconductor layer and the active layer are mesa-etched and exposed, and the second electrode pad is disposed above the exposed region of the first conductivity type semiconductor layer. It can be located at In this case, the insulating reflective layer is positioned between the second electrode pad and the first conductive semiconductor layer. Accordingly, unnecessary light can be prevented from occurring under the second electrode pad.

In this case, the insulating reflective layer may cover at least some of the side surfaces of the second conductive semiconductor layer and the active layer exposed by the mesa etching. Therefore, the light generated in the active layer may reflect the light traveling to the second electrode pad through the mesa side by the insulating reflective layer, thereby preventing the light loss by the second electrode pad.

The connection part may connect the upper extension part and the second electrode pad, and the connection part may be spaced apart from the second conductive semiconductor layer by an insulating layer. For example, the connection part may be insulated from the mesa side by the insulating reflective layer, and may be insulated from the upper surface of the second conductive semiconductor layer (or transparent electrode layer) by another insulating layer.

In some embodiments, the second conductivity type semiconductor layer and the active layer may be divided to define at least two light emitting regions. In addition, an upper extension connected to the second electrode pad may be positioned on the at least two light emitting regions.

By dividing the light emitting structure into a plurality of light emitting regions, even if there are defects such as pinholes or actual potentials in a specific position, it is possible to prevent excessive concentration of currents in these defects, thus distributing the current evenly over a wide area. have.

The at least two light emitting regions may have a symmetrical structure with respect to a line crossing the first electrode pad and the second electrode pad. Accordingly, the at least two light emitting regions may exhibit the same light emitting characteristics.

In addition, the light emitting diode may further include at least one lower extension connected to the first electrode pad. Furthermore, at least one of the lower extensions may be located between the at least two light emitting regions.

In a conventional light emitting diode, a second electrode pad is positioned on the second conductive semiconductor layer and electrically connected to the second conductive semiconductor layer. Thus, current is concentrated around the second electrode pad, which hinders current dispersion. However, according to embodiments of the present invention, since the second electrode pad is insulated from the light emitting structure by the insulating reflective layer, it is possible to prevent the current from being concentrated around the second electrode pad. Furthermore, by forming the second electrode pads on the portions of the light emitting structure where the second conductive semiconductor layer and the active layer are removed by mesa etching, unnecessary light is generated under the second electrode pads, thereby improving light emission efficiency. . In addition, by dividing the light emitting structure into a plurality of light emitting regions, current can be evenly distributed by preventing excessive concentration of current in crystal defects in the light emitting regions. Furthermore, light extraction efficiency may be further improved by disposing a pattern of light extraction elements on the light emitting structure.

1 is a plan view illustrating a light emitting diode according to an exemplary embodiment of the present invention.
2A) through 2C are cross-sectional views taken along the cut lines AA, BB and CC of FIG. 1, respectively.
3 is a cross-sectional view for describing a light emitting diode according to another embodiment of the present invention, which is taken along the cut line CC of FIG. 1.
4 is a plan view illustrating a light emitting diode according to still another embodiment of the present invention.
5 is a plan view illustrating a light emitting diode according to still another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the width, length, thickness, and the like of the components may be exaggerated for convenience. Like numbers refer to like elements throughout.

1 is a plan view illustrating a light emitting diode according to an exemplary embodiment of the present invention, and FIGS. 2A to 2C are cross-sectional views taken along the cutting lines A-A, B-B, and C-C of FIG. 1, respectively.

1 and 2A to 2C, the light emitting diode includes a substrate 21, a light emitting structure including light emitting regions LE1 and LE2, an insulating reflective layer 31, a first electrode pad 35, and a second electrode. An electrode pad 33 and upper extensions 33a. In addition, the light emitting diode may include a transparent electrode layer 29, an insulating layer 32, connection parts 33b, a first lower extension part 35a, and a second lower extension part 35b. Further, the light emitting structure includes a first conductive semiconductor layer 23, an active layer 25, and a second conductive semiconductor layer 27.

The substrate 11 may be a patterned sapphire substrate, but is not limited thereto. A first conductive semiconductor layer 23 is positioned on the substrate 21, a second conductive semiconductor layer 27 is positioned on the first conductive semiconductor layer 23, and the first conductive semiconductor layer is formed of a first conductive semiconductor layer 23. The active layer 25 is interposed between the two conductive semiconductor layers. The first conductive semiconductor layer 23, the active layer 25, and the second conductive semiconductor layer 27 may be formed of a gallium nitride-based compound semiconductor material, that is, (Al, In, Ga) N. The active layer 25 has a composition element and composition ratio determined so as to emit light of a desired wavelength, such as ultraviolet light or blue light.

The first conductivity-type semiconductor layer 23 may be an n-type nitride semiconductor layer, and the second conductivity-type semiconductor layer 27 may be a p-type nitride semiconductor layer or vice versa.

The first conductive semiconductor layer 23 and / or the second conductive semiconductor layer 27 may be formed as a single layer, as shown, but may be formed in a multilayer structure. In addition, the active layer 25 may have a single quantum well or multiple quantum well structures. In addition, a buffer layer (not shown) may be interposed between the substrate 21 and the first conductivity-type semiconductor layer 23. The semiconductor layers 23, 25, 27 may be formed using MOCVD or MBE technology.

The second conductivity-type semiconductor layer 27 and the active layer 23 of the light emitting structure may be divided to define at least two light emitting regions LE1 and LE2. These emission regions LE1 and LE2 may be formed to have a symmetrical structure, and this division process may be performed by a mesa etching process. The first conductive semiconductor layer 23 in the region crossing the center of the light emitting structure is exposed by the mesa etching process so that the second conductive semiconductor layer 27 and the active layer 25 are divided into two regions. Can be divided. In addition, side surfaces of the light emitting structure formed by the mesa etching process may preferably have an inclination angle within the range of 30 to 70 degrees with respect to the surface of the substrate 21.

The transparent electrode layer 29 may be positioned on the second conductive semiconductor layer 27. The transparent electrode layer 29 may be formed of ITO or Ni / Au and is ohmic contacted to the second conductivity type semiconductor layer. The pattern LEE of the light extraction elements LEE is positioned on the transparent electrode layer 29. For example, the light extraction elements may be circular columnar shapes having a diameter of approximately 5 μm, and these light extraction elements may be spaced approximately 30 μm from each other. The light extraction elements can assist in the emission of light by scattering or reflecting light as the light generated in the active layer 25 travels toward the transparent electrode layer 29. The pattern of the light extraction elements may be a regular pattern, but is not limited thereto and may be an irregular pattern.

The insulating reflective layer 31 is positioned on the first conductive semiconductor layer 23 exposed by the mesa etching process. The insulating reflective layer 31 is positioned on a portion of the light emitting structure and covers a portion of the mesa side exposed by mesa etching. The insulating reflective layer 31 may be formed by repeatedly stacking material layers having different refractive indices and then patterning them using a photolithography process. The layers having different refractive indices may be, for example, SiO ₂ , Si ₃ N ₄ , TiO _2, and the like. Nb ₂ O ₅ can be selected from.

The insulating reflective layer 31 may be formed after forming the transparent electrode layer 29 on the light emitting structure, but is not limited thereto. After forming the insulating reflective layer 31 first, the transparent electrode layer 29 may be formed. It may be.

The insulating layer 32 may cover the second conductive semiconductor layer 27 (or the transparent electrode layer 29) of the light emitting structure. The insulating layer 32 may also cover side surfaces of the second conductive semiconductor layer 29 and the active layer 25 exposed by mesa etching. In addition, the insulating layer 32 has openings 32a exposing the transparent electrode layer 29 on the light emitting regions LE1 and LE2. The transparent electrode layer 29 (or the second conductivity type semiconductor layer 27) is exposed by the openings 321a. The insulating layer 32 is not particularly limited as long as it is a transparent material through which light generated by the active layer 25 can pass, and may be formed of, for example, SiO ₂ .

The first electrode pad 35 and the second electrode pad 33 are positioned on the mesa-etched first conductive semiconductor layer. The first electrode pad 35 is electrically connected to the first conductive semiconductor layer 23. The second electrode pad 33 is insulated from the first conductive semiconductor layer 23 by the insulating layer 31. The first and second electrode pads 33 and 35 have a relatively large area to bond the wire as bonding pads for bonding the wire. The first electrode pad 35 and the second electrode pad 33 may be located on the exposed region of the first conductive semiconductor layer 23, but are not limited thereto. It may be located above the second conductivity-type semiconductor layer 27.

The insulating reflective layer 31 is positioned between the second electrode pad 33 and the first conductive semiconductor layer 23 to insulate the second electrode pad 33 from the first conductive semiconductor layer 23. . In addition, the insulating reflective layer 31 covers a part of the mesa side to prevent the second electrode pad 33 from contacting the second conductive semiconductor layer 27 or the active layer 25 on the mesa side.

Meanwhile, upper extensions 33a are positioned on the second conductivity type semiconductor layer 27 (or transparent electrode layer 29). The upper extensions 33a may be connected to the second electrode pad 33 through the connecting portions 33b, respectively, and the upper extensions 33a may be the second conductive semiconductor layer 27 (or the transparent electrode layer). 29) is electrically connected. The upper extensions 33a may be connected to the transparent electrode layer 29 through the openings 32a of the insulating layer 32. The upper extensions 33a are disposed to evenly distribute the current in the first conductivity type semiconductor layer 27. Meanwhile, the connection parts 33b are spaced apart from the second conductive semiconductor layer 27 and the active layer 25 by the insulating reflective layer 31 and / or the insulating layer 32.

Meanwhile, at least one lower extension part 35a may extend from the first electrode pad 35. The lower extension part 35a is positioned on the first conductivity type semiconductor layer 23 and electrically connected to the first conductivity type semiconductor layer 23. As shown in the drawing, the lower extension part 35a may be located between the divided light emitting regions, but the present invention is not limited thereto and may be located outside the light emitting regions.

The electrode pads 33 and 35, the upper extensions 33a, the connecting portions 33b, and the lower extensions 35a may be formed together using the same process using the same metal material, for example, Cr / Au. It is not limited to this. For example, the upper extensions 33a and the second electrode pad 33 may be formed by separate processes, or may be formed of different materials.

In the present embodiment, the divided light emitting regions have a symmetrical structure with respect to a line connecting the first electrode pad 35 and the second electrode pad 33, for example, the cutting line B-B. The upper extensions 33a may also be symmetrically disposed so that the emission regions may exhibit the same emission characteristics. Therefore, the packaging process of the light emitting diode can be simplified by dividing the light emitting region into two in one light emitting diode, compared to using two light emitting diodes connected in parallel. Furthermore, by dividing the light emitting regions, concentration of current by a defect can be alleviated, and light extraction efficiency can be increased by forming inclined sides by mesa etching.

In the present embodiment, the second electrode pad 33 is positioned on the first conductive semiconductor layer 23 exposed by mesa etching, and the insulating reflective layer 31 is interposed therebetween. This structure effectively utilizes current by preventing light from being generated under the second electrode pad 33 and allowing light to be generated in a region other than the region in which the second electrode pad 33 is formed. However, the present invention is not limited thereto. For example, the first conductive semiconductor layer 23 exposed by mesa etching may be further removed to expose the substrate, and the insulating reflective layer 31 is formed on the substrate 21, and the second electrode pad 33 is disposed thereon. ) Can also be placed. In addition, the second electrode pad 33 may be disposed on the second conductive semiconductor layer 27 or the transparent electrode layer 29 via the insulating reflective layer 31.

3 is a cross-sectional view illustrating a light emitting diode according to another embodiment of the present invention, and corresponds to the cross-sectional view of FIG. 2C taken along the cutting line C-C of FIG. 1.

Referring to FIG. 3, the light emitting diode according to the present embodiment is substantially similar to the light emitting diode described above, and thus the difference will be described in order to avoid duplication.

In the light emitting diodes described above with reference to FIGS. 1 and 2A through 2C, patterns of the light extraction elements LEE are positioned on the transparent electrode layer 29. In contrast, in the light emitting diode according to the present embodiment, the pattern of the light extraction elements LEE is positioned on the insulating layer 32. The light extraction elements LEE may be formed by partially patterning an upper portion of the insulating layer 32, or may be formed by forming a different material layer on the insulating layer 32 and then patterning the same. have. The light extraction elements LEE may be of circular columnar shape, for example having a diameter of 5 μm, and these light extraction elements may be spaced approximately 30 μm from each other.

4 is a plan view illustrating a light emitting diode according to still another embodiment of the present invention.

In the embodiment of FIG. 1, the first electrode pad 35 and the second electrode pad 33 are disposed along the long axis direction of the light emitting diode, and the light emitting regions are divided along the long axis direction of the light emitting diode. In the present embodiment, the electrode pads 53 and 55 are disposed along the short axis direction of the light emitting diode, and the light emitting regions are divided along the short direction of the light emitting diode. In addition, the divided light emitting regions have a symmetrical structure, and the upper extensions 53a and the lower extensions 55a are also arranged in a symmetrical structure.

Under the second electrode pad 53, as described with reference to FIG. 1, an insulating reflective layer 51 is positioned and a pattern of light extraction elements LEE is positioned on the transparent electrode layer or the insulating layer 52. .

Here, the upper extensions 55a extend in the outer side of the light emitting diode to surround the light emitting diode, and also have an extension portion 53b penetrating inward from the outside of the light emitting diode. On the other hand, the lower extensions 55a extend from the inside to the outside of the light emitting diode. In addition, the lower extensions 55a may be bifurcated so as to surround the extension 53b in the light emitting regions, respectively.

The upper extensions 55a and the second electrode pads 53 are connected to each other by connection parts 53b.

5 is a plan view illustrating a light emitting diode according to still another embodiment of the present invention.

Referring to FIG. 5, the light emitting diode according to the present embodiment is generally similar to the light emitting diode described with reference to FIG. 4, but there are differences in the arrangement of the lower extensions 65a and the upper extensions 63a.

That is, the lower extensions 65a extend outwardly of the light emitting diodes and then enter the inside of the light emitting region, and the upper extensions 63a include two extensions on each light emitting region, and these two extensions It is arrange | positioned so as to surround the lower extension part 65a which penetrated in this inside.

While some embodiments of the invention have been described above, various embodiments and variations are possible with respect to the arrangement of electrode pads and extensions. In addition, although the light emitting diode divided into two light emitting regions has been described as an example, it may be divided into a larger number of light emitting regions.

Claims (17)

Board;
A light emitting structure on the substrate, the light emitting structure comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer;
A first electrode pad electrically connected to the first conductive semiconductor layer;
A second electrode pad positioned on the substrate;
Covering a portion of the light emitting structure and positioned below the second electrode pad to separate the second electrode pad from the light emitting structure, having a larger area than the second electrode pad, and reflecting light from the light emitting structure. Insulating reflective layer;
At least one upper extension connected to the second electrode pad and electrically connected to the second conductivity type semiconductor layer; And
A light emitting diode comprising a pattern of light extraction elements located above the second conductivity type semiconductor layer. The method according to claim 1,
Wherein the first conductive semiconductor layer is an n-type nitride semiconductor layer, and the second conductive semiconductor layer is a p-type nitride semiconductor layer. The method according to claim 2,
And a transparent electrode layer on the p-type nitride semiconductor layer, wherein the upper extension portion is connected to the transparent electrode layer. The method according to claim 3,
The pattern of light extraction elements is a light emitting diode formed on the transparent electrode layer. The method according to claim 3,
Further comprising an insulating layer covering the transparent electrode layer,
The insulating layer has an opening that exposes the transparent electrode layer,
The upper extension portion is connected to the transparent electrode layer through the opening. The method according to claim 5,
And the opening is positioned away from the second electrode pad. The method according to claim 5,
The pattern of light extraction elements is a light emitting diode formed on the insulating layer. The method according to claim 1,
The first conductive semiconductor layer has a region in which the second conductive semiconductor layer and the active layer are mesa-etched and exposed,
The second electrode pad is positioned above the exposed area of the first conductivity type semiconductor layer,
The insulating reflective layer is disposed between the second electrode pad and the first conductive semiconductor layer. The method according to claim 8,
The insulating reflective layer covers at least some of the side surfaces of the second conductive semiconductor layer and the active layer exposed by the mesa etching. The method according to claim 8,
Further comprising a connection connecting the upper extension and the second electrode pad,
The connection part is a light emitting diode spaced apart from the second conductive semiconductor layer by an insulating layer. The method according to claim 1,
The second conductivity type semiconductor layer and the active layer are divided to define at least two light emitting regions,
And an upper extension connected to the second electrode pads on the at least two light emitting regions, respectively. The method of claim 11,
The at least two light emitting regions have a symmetrical structure with respect to a line crossing the first electrode pad and the second electrode pad. The method of claim 11,
And at least one lower extension connected to the first electrode pad, wherein at least one of the lower extensions is positioned between the at least two light emitting regions. The method of claim 11,
Further comprising transparent electrode layers respectively positioned on the second conductive semiconductor layers in the light emitting regions, wherein upper extensions connected to the second electrode pads are connected to the transparent electrode layers, respectively. The method according to claim 14,
The pattern of light extraction elements is a light emitting diode formed on the transparent electrode layers, respectively. The method according to claim 14,
Further comprising an insulating layer covering the transparent electrode layers,
The insulating layer has openings exposing the transparent electrode layers,
And the upper extensions are connected to the transparent electrode layers through the openings, respectively. 18. The method of claim 16,
The light extraction pattern is a light emitting diode formed on the insulating layer.

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