KR101308130B1 - 발광 소자 및 그 제조 방법 - Google Patents
발광 소자 및 그 제조 방법 Download PDFInfo
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- KR101308130B1 KR101308130B1 KR1020080027494A KR20080027494A KR101308130B1 KR 101308130 B1 KR101308130 B1 KR 101308130B1 KR 1020080027494 A KR1020080027494 A KR 1020080027494A KR 20080027494 A KR20080027494 A KR 20080027494A KR 101308130 B1 KR101308130 B1 KR 101308130B1
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- 238000000034 method Methods 0.000 title claims description 30
- 150000004767 nitrides Chemical class 0.000 claims abstract description 69
- 239000004065 semiconductor Substances 0.000 claims abstract description 66
- 239000002019 doping agent Substances 0.000 claims abstract description 44
- 239000007789 gas Substances 0.000 claims description 121
- 239000000758 substrate Substances 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 239000013256 coordination polymer Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 185
- 229910002601 GaN Inorganic materials 0.000 description 85
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- -1 into the reactor Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/04—MOCVD or MOVPE
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
- H01S5/3063—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping using Mg
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3216—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities quantum well or superlattice cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (18)
- 삭제
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- 기판위에 n형 질화물 반도체층을 형성하는 단계;상기 n형 질화물 반도체층에 활성층을 형성하는 단계;상기 활성층 위에 AlN과 GaN을 교대로 반복 성장시켜 초격자 구조의 AlN/GaN층을 형성하는 단계;상기 초격자 구조의 AlN/GaN층위에 p형 질화물 반도체층을 형성하는 단계를 포함하되,상기 AlN 및 상기 GaN 중 적어도 하나는 p형 도펀트가 도핑된 p형이고,상기 초격자 구조의 AlN/GaN층은 반응기 내에서 형성되며,상기 초격자 구조의 AlN/GaN층 형성 단계는,상기 반응기내로 NH3 가스, Al 소스 가스를 포함하는 소스 가스들을 공급하여 상기 활성층위에 AlN층을 성장시키고,상기 반응기 내로 공급되는 Al 소스 가스의 공급을 중단하여 상기 AlN층의 성장을 중단시키되, NH3 가스를 공급하고,상기 반응기 내로 Ga 소스 가스 및 NH3 가스를 공급하여 AlN층위에 GaN층을 성장시키고,상기 반응기 내로 공급되는 Ga 소스 가스의 공급을 중단하여 GaN층의 성장을 중단시키되, NH3 가스를 공급하는 것을 포함하며,상기 AlN층의 성장, 상기 AlN층의 성장 중단, 상기 GaN층의 성장 및 상기 GaN층의 성장 중단의 일련의 과정은 동일 온도에서 복수회 반복하여 수행되고,상기 AlN층의 성장 또는 상기 GaN층의 성장 동안, 상기 반응기내로 p형 도펀트 소스 가스가 공급되며,상기 AlN층의 성장 중단 및 상기 GaN층의 성장 중단 동안, 상기 p형 도펀트 소스 가스의 상기 반응기 내로의 공급은 중단되는 것을 특징으로 하는 발광 소자 제조 방법.
- 청구항 8에 있어서,상기 p형 질화물 반도체층은 p-GaN인 것을 특징으로 하는 발광소자 제조 방법.
- 청구항 8에 있어서, 상기 초격자 구조의 AlN/GaN층은,상기 GaN이 상기 AlN보다 두껍게 형성된 것을 특징으로 하는 발광 소자 제조 방법.
- 청구항 8에 있어서,상기 p형 도펀트 소스 가스는 상기 AlN층을 성장시키는 동안 상기 반응기 내로 공급되고,상기 AlN층은 p형인 발광 소자 제조 방법.
- 청구항 11에 있어서,상기 초격자 구조의 AlN/GaN층 형성 단계를 수행한 후,상기 반응기 내로 Ga 소스 가스, N 소스 가스, p형 도펀트 소스 가스를 포함하는 소스 가스들을 공급하여 상기 기판 상에 p형 도펀트가 도핑된 상기 p형 질화물 반도체층을 성장시키는 것을 포함하는 발광 소자 제조 방법.
- 청구항 11에 있어서,상기 일련의 과정을 반복하는 동안, 각 p형 AlN층을 성장시키기 위해 공급되는 p형 도펀트 소스 가스는 동일한 유량으로 공급되는 것을 특징으로 하는 발광 소자 제조 방법.
- 청구항 11에 있어서,상기 일련의 과정을 반복하는 동안, 각 p형 AlN층을 성장시키기 위해 공급되는 p형 도펀트 소스 가스는 서로 다른 유량으로 공급되는 것을 특징으로 하는 발광 소자 제조 방법.
- 청구항 8에 있어서,상기 p형 도펀트 소스 가스는 상기 AlN층을 성장시키는 동안 상기 반응기 내로 공급되고, 또한,상기 p형 도펀트 소스 가스는 상기 GaN층을 성장시키는 동안 상기 반응기 내로 공급되며,상기 AlN층 및 상기 GaN층은 모두 p형인 발광 소자 제조 방법.
- 청구항 8에 있어서,상기 p형 도펀트 소스 가스는 상기 GaN층을 성장시키는 동안 상기 반응기 내로 공급되며,상기 GaN층은 p형인 발광 소자 제조 방법.
- 청구항 8에 있어서,상기 p형 도펀트 소스 가스는 CP2Mg 또는 DMZn인 것을 특징으로 하는 발광 소자 제조 방법.
- 청구항 11에 있어서,상기 GaN층은 u-GaN층인 발광 소자 제조 방법.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
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KR1020080027494A KR101308130B1 (ko) | 2008-03-25 | 2008-03-25 | 발광 소자 및 그 제조 방법 |
EP08012675.8A EP2105974B1 (en) | 2008-03-25 | 2008-07-14 | Method for manufacturing a nitride semiconductor light emitting diode |
JP2008183787A JP5322523B2 (ja) | 2008-03-25 | 2008-07-15 | 発光素子及びその製造方法 |
US12/193,588 US20090242870A1 (en) | 2008-03-25 | 2008-08-18 | Light emitting device and method for manufacturing the same |
US12/535,244 US8716046B2 (en) | 2008-03-25 | 2009-08-04 | Light emitting device and method for manufacturing the same |
US12/775,119 US8716048B2 (en) | 2008-03-25 | 2010-05-06 | Light emitting device and method for manufacturing the same |
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KR1020080027494A KR101308130B1 (ko) | 2008-03-25 | 2008-03-25 | 발광 소자 및 그 제조 방법 |
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KR101308130B1 true KR101308130B1 (ko) | 2013-09-12 |
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US (3) | US20090242870A1 (ko) |
EP (1) | EP2105974B1 (ko) |
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KR (1) | KR101308130B1 (ko) |
Families Citing this family (12)
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US7902545B2 (en) * | 2008-05-14 | 2011-03-08 | Baker Hughes Incorporated | Semiconductor for use in harsh environments |
TW201230389A (en) * | 2010-10-27 | 2012-07-16 | Univ California | Method for reduction of efficiency droop using an (Al,In,Ga)N/Al(x)In(1-x)N superlattice electron blocking layer in nitride based light emitting diodes |
KR20130129683A (ko) * | 2012-05-21 | 2013-11-29 | 포항공과대학교 산학협력단 | 그레이드 초격자 구조의 전자 차단층을 갖는 반도체 발광 소자 |
KR101952437B1 (ko) | 2012-07-13 | 2019-04-25 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
JP5874592B2 (ja) * | 2012-09-21 | 2016-03-02 | 豊田合成株式会社 | Iii族窒化物半導体発光素子の製造方法 |
US20150243845A1 (en) * | 2014-02-26 | 2015-08-27 | Epistar Corporation | Light-emitting device |
US9773889B2 (en) | 2014-07-18 | 2017-09-26 | Taiwan Semiconductor Manufacturing Company Limited | Method of semiconductor arrangement formation |
CN106299051A (zh) * | 2016-08-05 | 2017-01-04 | 华灿光电(浙江)有限公司 | 一种发光二极管外延片及其制备方法 |
US10516076B2 (en) | 2018-02-01 | 2019-12-24 | Silanna UV Technologies Pte Ltd | Dislocation filter for semiconductor devices |
CN109166910B (zh) * | 2018-09-06 | 2020-07-14 | 中山大学 | 一种p型AlGaN半导体材料及其外延制备方法 |
CN113471060B (zh) * | 2021-05-27 | 2022-09-09 | 南昌大学 | 一种减少硅衬底上AlN薄膜微孔洞的制备方法 |
CN115986014B (zh) * | 2022-11-17 | 2024-04-12 | 淮安澳洋顺昌光电技术有限公司 | 一种设有连接层的外延片及包含该外延片的发光二极管 |
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2008
- 2008-03-25 KR KR1020080027494A patent/KR101308130B1/ko not_active Expired - Fee Related
- 2008-07-14 EP EP08012675.8A patent/EP2105974B1/en not_active Not-in-force
- 2008-07-15 JP JP2008183787A patent/JP5322523B2/ja not_active Expired - Fee Related
- 2008-08-18 US US12/193,588 patent/US20090242870A1/en not_active Abandoned
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2009
- 2009-08-04 US US12/535,244 patent/US8716046B2/en active Active
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2010
- 2010-05-06 US US12/775,119 patent/US8716048B2/en active Active
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Also Published As
Publication number | Publication date |
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KR20090102203A (ko) | 2009-09-30 |
JP2009239243A (ja) | 2009-10-15 |
EP2105974A3 (en) | 2012-08-22 |
JP5322523B2 (ja) | 2013-10-23 |
US8716048B2 (en) | 2014-05-06 |
EP2105974A2 (en) | 2009-09-30 |
EP2105974B1 (en) | 2017-11-01 |
US20090291519A1 (en) | 2009-11-26 |
US8716046B2 (en) | 2014-05-06 |
US20090242870A1 (en) | 2009-10-01 |
US20100216272A1 (en) | 2010-08-26 |
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