KR101283986B1 - 잉곳성장장치의 멜트 레벨 측정용 기준점 제공장치 - Google Patents
잉곳성장장치의 멜트 레벨 측정용 기준점 제공장치 Download PDFInfo
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- KR101283986B1 KR101283986B1 KR1020090116395A KR20090116395A KR101283986B1 KR 101283986 B1 KR101283986 B1 KR 101283986B1 KR 1020090116395 A KR1020090116395 A KR 1020090116395A KR 20090116395 A KR20090116395 A KR 20090116395A KR 101283986 B1 KR101283986 B1 KR 101283986B1
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- Prior art keywords
- melt
- chamber
- crucible
- ingot
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/206—Controlling or regulating the thermal history of growing the ingot
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (2)
- 수냉실이 구비되는 제1 챔버(2) 내부에 고온의 멜트(5) 용용액이 수용되는 도가니(3)가 설치되고, 상기 도가니(3) 하부에 페데스탈(16)과 구동축(17) 및 도가니 구동수단(18)이 차례로 설치되고, 상기 도가니(3) 바깥에 전열히터(4)가 빙둘러 설치되고, 핫죤(HZ) 상부에 멜트(5)의 온도가 유지될 수 있게 차열부재(8)가 위치하고, 상기 도가니(3) 상부에 수냉실이 구비된 제2 챔버(6)가 설치되고, 상기 제2 챔버(6)의 공간부(12)에 성장중인 잉곳(13)을 인상시킬 수 있는 시드(11)와 시드척 및 인상케이블(10)이 설치되고, 상기 제1 챔버(2)의 상부에 제1 챔버(2) 내부를 들여다 볼 수 있는 뷰포트(7)가 설치되고, 차열부재(8) 하단에 멜트 레벨 측정용 기준부재가 설치된 잉곳성장장치에 있어서;상기 차열부재(8) 대신 수냉실이 구비된 제2 챔버(6)의 하단부에 하향 돌출형의 고온형 석영 기준부재(14)를 설치하여 망점 형태의 기준포인터가 제공되도록 함으로써, CCD 카메라(15)가 뷰포터(7)를 통하여 도가니(3) 내부의 멜트(5) 표면(3a)을 촬영할 때 상기 기준부재(14)가 망점 형태로 함께 촬영되어 멜트(5)의 레벨 변위를 비교 측정할 수 있도록 함을 특징으로 하는 잉곳성장장치의 멜트 레벨 측정용 기준점 제공장치.
- 삭제
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020090116395A KR101283986B1 (ko) | 2009-11-30 | 2009-11-30 | 잉곳성장장치의 멜트 레벨 측정용 기준점 제공장치 |
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KR1020090116395A KR101283986B1 (ko) | 2009-11-30 | 2009-11-30 | 잉곳성장장치의 멜트 레벨 측정용 기준점 제공장치 |
Publications (2)
Publication Number | Publication Date |
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KR20110059942A KR20110059942A (ko) | 2011-06-08 |
KR101283986B1 true KR101283986B1 (ko) | 2013-07-09 |
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KR1020090116395A Active KR101283986B1 (ko) | 2009-11-30 | 2009-11-30 | 잉곳성장장치의 멜트 레벨 측정용 기준점 제공장치 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102094850B1 (ko) | 2018-11-28 | 2020-03-30 | (주)에스테크 | 실리콘 단결정 성장시스템의 멜트갭 자동 제어방법 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101992775B1 (ko) * | 2013-01-30 | 2019-06-25 | 에스케이실트론 주식회사 | 단결정 잉곳 성장 장치 |
KR101456607B1 (ko) * | 2013-02-26 | 2014-11-03 | (주)에스테크 | 잉곳 원료 연속공급장치 및 그 연속공급방법 |
KR101528060B1 (ko) * | 2013-12-03 | 2015-06-10 | 주식회사 엘지실트론 | 안티 디포지션 뷰 포트 및 이를 포함하는 잉곳성장장치 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2007290906A (ja) * | 2006-04-25 | 2007-11-08 | Shin Etsu Handotai Co Ltd | 基準反射体と融液面との距離の測定方法、及びこれを用いた融液面位置の制御方法、並びにシリコン単結晶の製造装置 |
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JP2007290906A (ja) * | 2006-04-25 | 2007-11-08 | Shin Etsu Handotai Co Ltd | 基準反射体と融液面との距離の測定方法、及びこれを用いた融液面位置の制御方法、並びにシリコン単結晶の製造装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102094850B1 (ko) | 2018-11-28 | 2020-03-30 | (주)에스테크 | 실리콘 단결정 성장시스템의 멜트갭 자동 제어방법 |
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