KR101275898B1 - Thin film transistor, display device having the thin film transistor and method of manufacturing thereof - Google Patents

Abstract

The present invention relates to a display device. The display device includes a gate electrode disposed on the substrate; A gate insulating film disposed on the substrate including the gate electrode; A semiconductor layer pattern disposed on the gate insulating layer corresponding to the gate electrode and including an organic-inorganic composite material mixed with an organic semiconductor material and an inorganic semiconductor material; A source electrode on the semiconductor layer pattern; And a thin film transistor including a drain electrode disposed on the semiconductor layer pattern and corresponding to the source electrode, thereby ensuring excellent electrical characteristics and reliability and at the same time replacing vacuum deposition by a wet process. Process cost can be lowered.

Organic-inorganic composite materials, thin film transistors, display devices, wet process

Description

Thin film transistor, display device having same and manufacturing method thereof {Thin film transistor, display device having the thin film transistor and method of manufacturing thereof}

1A is a plan view of a thin film transistor according to a first embodiment of the present invention.

FIG. 1B is a cross-sectional view taken along the line II ′ of FIG. 1A.

2A to 2H are cross-sectional views illustrating a method of manufacturing a thin film transistor according to a first embodiment of the present invention.

3 is a cross-sectional view illustrating a thin film transistor according to a second exemplary embodiment of the present invention.

4A to 4F are cross-sectional views illustrating a method of manufacturing a thin film transistor according to a second embodiment of the present invention.

5A is a plan view of a display device according to a third exemplary embodiment of the present invention.

FIG. 5B is a cross-sectional view of FIG. 5A taken along the line II-II '.

6A through 6C are cross-sectional views illustrating a manufacturing process of a display device according to a third exemplary embodiment of the present invention.

 (Explanation of symbols for the main parts of the drawing)

 100 substrate 110 gate electrode

 120: gate insulating film 130: semiconductor layer pattern

 131: active layer pattern 132: ohmic contact layer pattern

 140: source electrode 150: drain electrode

 160: protective film 180: pixel electrode

 260: protective film pattern

The present invention relates to a display device, and more particularly, to a thin film transistor manufactured using an organic-inorganic composite material, a display device having the same, and a method of manufacturing the same.

Today, with the development of information and communication, display devices are increasing in demand for various functions including image quality. At this time, a thin film transistor could be employed for the display device. The thin film transistor was able to lower power consumption and improve lifespan as well as the image quality of the display device. In particular, it played a huge role in realizing the large area of the display device.

The thin film transistor is formed by performing a vacuum deposition and patterning process on the semiconductor layer, the insulator layer and the metal thin film, respectively. At this time, the vacuum deposition method not only requires expensive equipment, but also requires a deposition process in a vacuum chamber, and thus has a limitation in forming a large-area device.

 In addition, the semiconductor layer is mainly formed of amorphous silicon (a-Si) and polycrystalline silicon (poly-crystalline Si; poly-Si), such materials are carriers are generated by light to form a thin film transistor Even if it is off state, it will be turned on. As a result, the reliability of the thin film transistor has become a factor.

An object of the present invention is to provide a thin film transistor and a method of manufacturing the same that can reduce the cost of the process by performing a wet process instead of vacuum deposition.

Another object of the present invention is to provide a display device including the thin film transistor and a method of manufacturing the same.

In order to achieve the above technical problem, an aspect of the present invention provides a thin film transistor. The thin film transistor may include a gate electrode disposed on a substrate; A gate insulating film disposed on the substrate including the gate electrode; A semiconductor layer pattern disposed on the gate insulating layer corresponding to the gate electrode and including an organic-inorganic composite material mixed with an organic semiconductor material and an inorganic semiconductor material; A source electrode on the semiconductor layer pattern; And a drain electrode disposed on the semiconductor layer pattern to correspond to the source electrode.

Another aspect of the present invention to achieve the above technical problem provides a method of manufacturing a thin film transistor. The manufacturing method includes forming a gate electrode on a substrate; Forming a gate insulating film on the substrate including the gate electrode; Forming a semiconductor layer pattern including an organic-inorganic composite material in which an organic semiconductor material and an inorganic semiconductor material are mixed on the gate insulating layer corresponding to the gate electrode; And forming a source electrode and a drain electrode disposed on the semiconductor layer pattern to correspond to the source electrode.

Another aspect of the present invention to achieve the above technical problem provides a display device. The display device may include a substrate on which a thin film transistor is disposed; A passivation pattern disposed on the substrate including the thin film transistor and exposing a portion of the thin film transistor; And a pixel electrode disposed on the passivation layer pattern, electrically connected to the thin film transistor, and having an organic-inorganic conductive composite material mixed with a conductive organic material, an inorganic semiconductor material, and a conductive inorganic material.

Another aspect of the present invention to achieve the above technical problem provides a method of manufacturing a display device. The manufacturing method includes forming a thin film transistor on a substrate; Forming a protective layer pattern exposing a portion of the thin film transistor on a substrate including the thin film transistor; And forming a pixel electrode electrically connected to the thin film transistor on the passivation pattern, the pixel electrode having an organic-inorganic conductive composite material.

Hereinafter, with reference to the drawings of the thin film transistor and the display device according to the present invention will be described in detail. The following embodiments are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the size and thickness of the device may be exaggerated for convenience. Like numbers refer to like elements throughout.

1A and 1B are diagrams for explaining a thin film transistor according to a first embodiment of the present invention. 1A is a plan view of a thin film transistor according to a first embodiment of the present invention, and FIG. 1B is a cross-sectional view of FIG. 1A taken along the line II ′.

1A and 1B, a thin film transistor according to a first embodiment of the present invention is disposed on a substrate 100 including a gate electrode 110 and a gate electrode 110 disposed on the substrate 100. The gate insulating layer 120, the semiconductor layer pattern 130 disposed on the gate insulating layer 120 corresponding to the gate electrode 110, the source electrode 140 and the semiconductor layer pattern disposed on the semiconductor layer pattern 130. And a drain electrode 150 disposed on the 130 to correspond to the source electrode 140. In this case, the gate electrode 110 is connected to the gate wiring 101 to receive a gate signal. In addition, the source electrode 140 is connected to a data line 102 providing a data signal, and provides the data signal to the drain electrode 150 in accordance with the gate signal.

In detail, the semiconductor layer pattern 130 includes an organic-inorganic composite material. The organic-inorganic composite material may include an organic semiconductor material and an inorganic semiconductor material. In this case, the organic semiconductor material enables the thin film to be performed through a wet process, and the inorganic semiconductor material improves charge mobility and provides stability. That is, the semiconductor layer pattern 130 may be formed at the same time having excellent properties such as wet processability of the organic semiconductor and large charge mobility of the inorganic semiconductor and environmental durability. The organic semiconductor material may be poly (3-hexylthiophene; P3HT), pentacene, or the like. The inorganic semiconductor material may be zinc oxide (ZnO) or nitride. Gallium (GaN), silicon powder (Si Powder), etc. In particular, the zinc oxide (ZnO) has a high chemical stability, low dielectric constant, high electric field coupling coefficient, as well as the zinc oxide (ZnO). ) Has an ultraviolet shielding effect, light stability and moisture stability.

The gate electrode 110, the source electrode 140, and the drain electrode 150 may include an organic-inorganic conductive composite. The organic-inorganic conductive composite material may include a conductive organic material, an inorganic semiconductor material, and a conductive inorganic material. In this case, the conductive organic material may be poly (p-phenylene) (PPP), poly (p-phenylenevinylene) (poly (p-penylenevinylene); PP), polypyrrole ), N, N'-di-1-naphthyl-N-N'-diphenyl-1-1'-biphenyl-4,4'diami (N, N'-di-1-naphthyl-N, N'-diphenyl-1,1'-biphenyl-4,4'diamine (NPD), poly (3,4-ethylenedioxythiophene) -polystyrenesulfonate) (poly (3,4-ethylenedioxythiophene) -poly (styrene sulfonate); PEDOT: PSS). The conductive inorganic material may be aluminum (Al), copper (Cu), indium (In), gallium (Ga), boron (B), or the like. The inorganic semiconductor material may be zinc oxide (ZnO).

In addition, the gate insulating layer 120 may include an organic / inorganic insulating composite material. The organic-inorganic insulating composite material includes an organic insulating material and an inorganic semiconductor material having a high dielectric constant (high-K). In this case, the organic insulating material may be polyvinyl pyrrolidone (PVP), polymethylmethacrylate (PMMA), polyvinyl alcohol (PVA), photoacryl, or the like. In addition, the inorganic semiconductor material having the high-k material may be silicon oxide (SiOx), zirconium oxide (ZrOx), hafnium oxide (HfOx), or the like.

As a result, the gate electrode 110, the source electrode 140, the drain electrode 150, and the gate insulating layer 120 may form a thin film through a wet process.

In addition, the passivation layer 160 may be further disposed on the gate insulating layer 120 including the source electrode 140 and the drain electrode 150. Here, the protective layer 160 may include an organic-inorganic insulating composite material. In this case, the inorganic insulating material may be zinc oxide. The organic insulating material may include polyvinyl pyrrolidone (PVP), polymethylmethacrylate (PMMA), polyvinyl alcohol (PVA), photoacryl, and the like. In this case, the zinc oxide has an ultraviolet shielding effect, moisture stability and light stability, and since the organic insulating material may form a thin film through wet processability, a protective film 160 having an excellent shielding effect may be formed through a wet process. Can be.

In conclusion, the semiconductor layer pattern 130, the gate electrode 110, the source electrode 140, the drain electrode 150, the gate insulating layer 120, and the passivation layer 160 have an organic-inorganic composite having similar physical and chemical properties. It is possible to form a thin film transistor having a material, and excellent in interfacial properties between the components formed in each layer. In particular, ohmic contact is possible at an interface between the semiconductor layer pattern 130, the source electrode 140, and the drain electrode 150, thereby improving electrical characteristics of the thin film transistor.

2A to 2H are cross-sectional views illustrating a method of manufacturing a thin film transistor according to a first embodiment of the present invention.

Referring to FIG. 2A, a first conductive layer 110b including an organic-inorganic conductive composite material is formed on the substrate 100.

The first conductive layer 110b is formed by performing a coating process on the substrate 100 with a first composition liquid 110a including an organic-inorganic conductive composite material.

After forming a photoresist layer on the first conductive layer 110b, a photoresist pattern is formed through an exposure and development process. Thereafter, the first conductive layer 110b is etched according to the photoresist pattern, and then the photoresist pattern is removed to form the gate electrode 110 as shown in FIG. 2B.

Referring to FIG. 2C, a gate insulating layer 120 is formed on the substrate 100 including the gate electrode 110. The gate insulating layer 120 may be formed by forming a second composition liquid 120b through a coating process. The second composition liquid 120b includes an organic-inorganic insulating composite material. The organic-inorganic insulating composite material includes an organic insulating material and an inorganic semiconductor material having a high dielectric constant (high-K). In this case, the organic insulating material may be polyvinyl pyrrolidone (PVP), polymethylmethacrylate (PMMA), polyvinyl alcohol (PVA), photoacryl, or the like. In addition, the inorganic semiconductor material having the high-k material may be silicon oxide (SiOx), zirconium oxide (ZrOx), hafnium oxide (HfOx), or the like.

Referring to FIG. 2D, the semiconductor layer 130b is formed on the gate insulating layer 120. The semiconductor layer 130b is formed by applying the third composition liquid 130a by a coating process. The third composition liquid 130a includes an organic-inorganic composite material. The organic-inorganic composite material may include an organic semiconductor material and an inorganic semiconductor material. The organic semiconductor material may be poly (3-hexylthiophene; P3HT) or pentacene (pentacene), etc. The inorganic semiconductor material may be zinc oxide (ZnO) or gallium nitride (GaN). , Silicon powder (Si Powder) and the like.

After forming the photoresist layer on the semiconductor layer 130b, the photoresist pattern is formed by performing exposure and development processes. After etching the semiconductor layer 130b according to the photoresist pattern, the photoresist pattern is removed to form the semiconductor layer pattern 130 as shown in FIG. 2E.

Referring to FIG. 2F, a second conductive layer 140b is formed on the gate insulating layer 120 including the semiconductor layer pattern 130. The second conductive layer 140b may be formed by forming a fourth composition liquid 140a including an organic-inorganic conductive composite material by a coating process.

After forming a photoresist on the second conductive layer 140b, a photoresist pattern is formed through an exposure and development process. After etching the second conductive layer 140b according to the photoresist pattern, the photoresist pattern is removed to form the source electrode 140 and the drain electrode 150, as shown in FIG. 2G.

Referring to FIG. 2H, a passivation layer 160 may be further formed on the gate insulating layer 120 including the source electrode 140 and the drain electrode 150.

The passivation layer 160 may be formed by forming a fifth composition liquid 160a through a coating process. The fifth composition liquid may include an organic-inorganic insulating composite material. In this case, the inorganic insulating material may be zinc oxide. The organic insulating material may include polyvinyl pyrrolidone (PVP), polymethylmethacrylate (PMMA), polyvinyl alcohol (PVA), photoacryl, and the like. As described above, the zinc oxide has an ultraviolet shielding effect, moisture stability, and light stability, and the organic insulating material may form a thin film through wet processability, so that the protective film 160 having an excellent shielding effect may be subjected to a wet process. Can be formed through.

The coating process described in each step of forming the gate electrode 110, the gate insulating layer 120, the semiconductor layer pattern 130, the source electrode 140, the drain electrode 150, and the passivation layer 160 may be performed by spin coating. Method, spray coating method, dip coating method, inkjet printing method, doctor blade method.

In addition, the first and fourth composition liquids may include an organic-inorganic conductive composite material. The organic-inorganic conductive composite material includes a conductive organic material, an inorganic semiconductor material, and a conductive inorganic material. Here, the conductive organic material may be poly (p-phenylene) (PPP), poly (p-phenylenevinylene) (poly), polypyrrole ), N, N'-di-1-naphthyl-N-N'-diphenyl-1- 1'-biphenyl-4,4 'diami (N, N'-di-1-naphthyl-N, N'-diphenyl-1,1'-biphenyl-4,4'diamine (NPD), poly (3,4-ethylenedioxythiophene) -polystyrenesulfonate) (poly (3,4-ethylenedioxythiophene) -poly (styrene sulfonate); PEDOT: PSS) and the like. The conductive inorganic material may be aluminum (Al), copper (Cu), indium (In), gallium (Ga), boron (B), or the like.

Further, a patterning process for forming the gate electrode 110, the semiconductor layer pattern 130, the source electrode 140, and the drain electrode 150 was performed by photolithography using a photoresist, but is not limited thereto. Self-assembled monolayers (SAM) can be formed using.

As a result, the gate electrode 110, the gate insulating layer 120, the semiconductor layer pattern 130, the source electrode 140, the drain electrode 150, and the passivation layer 160 constituting the thin film transistor are formed of an organic-inorganic composite material. As a result, it may be formed by performing a continuous process through a wet process. This can be applied not only to a large area, but also to simplify the process and reduce the production cost.

3 is a cross-sectional view illustrating a thin film transistor according to a second exemplary embodiment of the present invention. The thin film transistor of the second embodiment of the present invention has the same components as the thin film transistor according to the first embodiment of the present invention except that it includes a semiconductor layer pattern including an ohmic contact layer. As a result, like reference numerals refer to like elements, and repeated descriptions will be omitted.

Referring to FIG. 3, the gate electrode 110 disposed on the substrate 100 and the gate insulating layer 120 and the gate electrode 110 disposed on the substrate 100 including the gate electrode 110 may correspond to each other. The semiconductor layer pattern 130 disposed on the gate insulating layer 120, the source electrode 140 disposed on the semiconductor layer pattern 130, and the source electrode 140 disposed on the semiconductor layer pattern 130. Drain electrode 150 is included.

The semiconductor layer pattern 130 includes an active layer pattern 131 and an ohmic contact layer pattern 132 disposed separately on both ends of the active layer pattern 131. That is, the ohmic contact layer pattern 132 is interposed between the active layer pattern 131 and the source electrode 140 and between the active layer pattern 131 and the drain electrode 150.

Here, the active layer pattern 131 includes an organic-inorganic composite material. In addition, the ohmic contact layer pattern 132 includes an organic-inorganic composite material in which impurities are mixed.

In this case, the organic-inorganic composite material may include an organic semiconductor material and an inorganic semiconductor material. The organic semiconductor material may be poly (3-hexylthiophene; P3HT) or pentacene (pentacene), etc. The inorganic semiconductor material may be zinc oxide (ZnO) or gallium nitride (GaN). , Silicon powder (Si Powder) and the like.

4A to 4E are cross-sectional views illustrating a method of manufacturing a thin film transistor according to a second embodiment of the present invention. The thin film transistor of the second embodiment of the present invention can be manufactured by the same manufacturing method as the thin film transistor according to the first embodiment of the present invention, except that the semiconductor layer pattern including the ohmic contact layer is formed. As a result, a description of repeated manufacturing steps will be omitted.

Referring to FIG. 4A, a gate insulating layer 120 is formed on the substrate 100 including the gate electrode 110 and the gate electrode 110. Here, the gate electrode 110 is formed including an organic-inorganic conductive composite material. In addition, the gate insulating layer 120 includes an organic-inorganic insulating composite material including an inorganic semiconductor material having a high dielectric constant.

The first composition liquid 131a is coated on the gate insulating layer 120 to form an active layer 131b. The first composition liquid 131a includes an organic-inorganic composite material having an organic semiconductor material and an inorganic semiconductor material. In this case, the organic semiconductor material may be poly (3-hexylthiophene; P3HT) or pentacene (pentacene), etc. The inorganic semiconductor material may be zinc oxide (ZnO), gallium nitride ( GaN), silicon powder (Si Powder) and the like.

Referring to FIG. 4B, the ohmic contact layer 132b is formed by coating the second composition liquid 132a on the active layer 131b by a coating process. In the second composition liquid 132a, impurities are further added to the first composition liquid 131a. Here, the ohmic contact layer 132b may be formed by doping impurities on the surface of the active layer 131b.

Referring to FIG. 4C, the conductive layer 140b is formed by coating the third composition liquid 140a on the ohmic contact layer 132b by a coating process. The third composition liquid 140a includes an organic-inorganic conductive composite material. The organic-inorganic conductive composite material includes a conductive organic material, an inorganic semiconductor material, and a conductive inorganic material. Here, the conductive organic material may be poly (p-phenylene) (PPP), poly (p-phenylenevinylene) (poly), polypyrrole ), N, N'-di-1-naphthyl-N-N'-diphenyl-1-1'-biphenyl-4,4'diami (N, N'-di-1-naphthyl-N, N'-diphenyl-1,1'-biphenyl-4,4'diamine (NPD), poly (3,4-ethylenedioxythiophene) -polystyrenesulfonate) (poly (3,4-ethylenedioxythiophene) -poly (styrene sulfonate); PEDOT: PSS) and the like. The conductive inorganic material may be aluminum (Al), copper (Cu), indium (In), gallium (Ga), boron (B), or the like.

Referring to FIG. 4D, after forming a photoresist layer on the conductive layer 140b, a photoresist pattern 170 having a step may be formed through an exposure and development process. Here, the photoresist pattern 170 may be formed through an exposure process using a halftone mask or a diffraction mask, the intensity of light transmitted for each region is controlled.

The conductive layer 140b, the ohmic contact layer 132b, and the active layer 131b are etched according to the photoresist pattern 170, and as shown in FIG. 4e, the source electrode 140, the drain electrode 150, and the ohmic cone. The textile layer pattern 132 and the active layer pattern 131b may be formed. That is, the source electrode 140, the drain electrode 150, the ohmic contact layer pattern 132, and the active layer pattern 131b may be formed using one mask.

Referring to FIG. 4F, a passivation layer 160 may be further formed on the gate insulating layer 120 including the source electrode 140 and the drain electrode 150.

5A and 5B illustrate a display device according to a third exemplary embodiment of the present invention. 5A is a plan view of a display device according to a third exemplary embodiment of the present invention, and FIG. 5B is a cross-sectional view of FIG. 5A taken along a line II-II '. Here, the display device according to the third embodiment of the present invention includes the thin film transistor according to the first embodiment of the present invention, and the same components are denoted by the same reference numerals, and repeated descriptions are omitted. The display device may be a liquid crystal display device or an organic light emitting display device.

5A and 5B, a display device according to a third exemplary embodiment of the present invention is disposed on a substrate 100 on which a thin film transistor Tr is disposed and a substrate 100 including a thin film transistor Tr. The pixel electrode 180 may include a passivation layer pattern 260 exposing a portion of the thin film transistor Tr and a pixel electrode 180 disposed on the passivation layer pattern 260 and electrically connected to the thin film transistor Tr. Here, the thin film transistor Tr is disposed in an intersection area of the gate line 101 and the data line 102 formed to cross each other. The thin film transistor Tr is electrically connected to the gate wiring 101 and the data wiring 102, respectively.

The pixel electrode 180 includes an organic-inorganic conductive composite material. The organic-inorganic conductive composite material includes a conductive organic material, an inorganic semiconductor material, and a conductive inorganic material. In this case, the conductive organic material may be poly (p-phenylene) (PPP), poly (p-phenylenevinylene) (poly (p-penylenevinylene); PP), polypyrrole ), N, N'-di-1-naphthyl-N-N'-diphenyl-1-1'-biphenyl-4,4'diami (N, N'-di-1-naphthyl-N, N'-diphenyl-1,1'-biphenyl-4,4'diamine (NPD), poly (3,4-ethylenedioxythiophene) -polystyrenesulfonate) (poly (3,4-ethylenedioxythiophene) -poly (styrene sulfonate); PEDOT: PSS) and the like. The conductive inorganic material may be aluminum (Al), copper (Cu), indium (In), gallium (Ga), boron (B, etc.) The inorganic semiconductor material may be zinc oxide (ZnO).

As a result, in order to form the pixel electrode 180 as a transparent electrode, expensive indium (In) may not be used, or the amount thereof may be reduced, thereby lowering the process cost. In addition, the pixel electrode 180 is formed of an organic-inorganic conductive composite material, and may be formed through a wet process.

The passivation pattern 260 includes an organic-inorganic composite material having zinc oxide. In this case, the organic material may be polyvinyl pyrrolidone (PVP), polymethylmethacrylate (PMMA), polyvinyl alcohol (PVA), photoacryl, or the like.

The thin film transistor Tr corresponds to the gate electrode 110 disposed on the substrate 100, the gate insulating layer 120 disposed on the substrate 100 including the gate electrode 110, and the gate electrode 110. A semiconductor layer pattern 130 disposed on the gate insulating layer 120, a source electrode 140 disposed on the semiconductor layer pattern 130, and a drain electrode 150 disposed corresponding to the source electrode 140. .

At least one of the gate electrode 110, the gate insulating layer 120, the semiconductor layer pattern 130, the source electrode 140, and the drain electrode 150 includes an organic-inorganic composite material.

That is, the semiconductor layer pattern 130 includes an organic-inorganic composite material having an organic semiconductor material and an inorganic semiconductor material. In this case, the organic semiconductor material may be poly (3-hexylthiophene (P3HT) or pentacene (pentacene). The inorganic semiconductor material may be zinc oxide (ZnO) or gallium nitride (GaN). ), And may be a silicon powder (Si Powder).

The gate electrode 110, the source electrode 140, and the drain electrode 150 include an organic-inorganic conductive composite.

The gate insulating layer 120 includes an organic-inorganic composite material having an inorganic semiconductor material having a high dielectric constant (high-K).

As a result, the thin film transistor Tr, the pixel electrode 180 and the passivation pattern 260 constituting the display device include an organic-inorganic composite material, thereby simultaneously having wet processability of the organic material and excellent electrical properties of the inorganic material. have.

As a result, the process can be simplified, the cost of the process can be lowered, and a display device having electrical characteristics and reliability can be manufactured.

6A through 6C are cross-sectional views illustrating a manufacturing process of a display device according to a third exemplary embodiment of the present invention. Here, the display device according to the third embodiment includes the thin film transistor according to the first embodiment, and a repeated manufacturing process of the thin film transistor is omitted.

Referring to FIG. 6A, a thin film transistor Tr is formed on the substrate 100.

In detail, the thin film transistor Tr first forms the gate electrode 110 on the substrate 100. A gate insulating layer 110 is formed on the substrate 100 including the gate electrode 110. The gate insulating layer 110 may be formed by coating an organic-inorganic composite material having a high dielectric constant. The semiconductor layer pattern 130 is formed on the gate insulating layer 110 corresponding to the gate electrode 110. Here, the semiconductor layer pattern 130 may be formed by applying an organic-inorganic composite material and then performing a patterning process.

The source electrode 140 and the drain electrode 150 corresponding to the source electrode 140 are formed on the semiconductor layer pattern 130. In this case, the gate electrode 110, the source electrode 140, and the drain electrode 150 may be formed by applying an organic-inorganic conductive composite material and then performing a patterning process. As a result, the thin film transistor Tr may be formed to include an organic-inorganic composite material, and thus may be formed through a wet process, and electrical characteristics and reliability may be secured.

A passivation layer pattern 260 exposing a portion of the thin film transistor Tr is formed on the substrate 100 including the thin film transistor Tr.

The passivation layer pattern 260 forms a passivation layer including an organic-inorganic insulating composite material by performing a coating process on the substrate 100 including the thin film transistor Tr. The passivation layer pattern 260 having the contact hole C exposing a part of the thin film transistor through the exposure and development processes is formed on the passivation layer.

Referring to FIG. 6B, the conductive layer 180b is formed by applying the composition liquid 180a on the passivation layer pattern 260 by a coating process. The composition liquid 180a includes an organic-inorganic conductive composite material having a conductive organic material, an inorganic semiconductor material, and a conductive inorganic material. In this case, the conductive organic material may be poly (p-phenylene) (PPP), poly (p-phenylenevinylene) (poly (p-penylenevinylene); PP), polypyrrole ), N, N'-di-1-naphthyl-N-N'-diphenyl-1-1'-biphenyl-4,4'diami (N, N'-di-1-naphthyl-N, N'-diphenyl-1,1'-biphenyl-4,4'diamine (NPD), poly (3,4-ethylenedioxythiophene) -polystyrenesulfonate) (poly (3,4-ethylenedioxythiophene) -poly ( styrene sulfonate); PEDOT: PSS) and the like. The conductive inorganic material may be aluminum (Al), copper (Cu), indium (In), gallium (Ga), boron (B, etc.) The inorganic semiconductor material may be zinc oxide (ZnO).

The coating process may be a spin coating method, a spray coating method, a dip coating method, an inkjet printing method, a doctor blade method, or the like.

After forming a photoresist layer on the conductive layer 180b, a photoresist pattern is formed through an exposure and development process. After etching the conductive layer 180b according to the photoresist pattern and removing the photoresist pattern, as shown in FIG. 6C, the pixel electrode 180 is electrically connected to the thin film transistor Tr.

Subsequently, although not illustrated in the drawing, the display device may be completed by bonding the upper substrate to the substrate.

Here, when the display device is a liquid crystal display device, the upper substrate may be a color filter substrate on which a color filter is formed. The method may further include forming a liquid crystal layer between the substrate and the upper substrate.

In addition, when the display device is an organic light emitting display device, the upper substrate may be an encapsulation substrate to which a moisture absorbent is attached. The method may further include forming an organic light emitting diode device including an anode and a cathode on the substrate or the upper substrate, and an organic light emitting layer interposed between the anode and the cathode.

As a result, a display device capable of securing electrical characteristics and reliability through a wet process can be manufactured.

As described above, the thin film transistor according to the present invention and the display device having the same include an organic-inorganic composite material, and thus may have inorganic environmental durability and electrical characteristics and organic wet processability, respectively.

In addition, since the continuous process using the wet process can be performed, the process can be simplified, and at the same time, the production cost can be reduced.

In addition, by performing a wet process instead of vacuum deposition, no expensive equipment is required and it is advantageous for a large area.

In addition, the interface characteristics between the components arranged in each layer are excellent, electrical characteristics can be improved, and reliability can be ensured.

In addition, in forming the transparent electrode, the cost can be reduced by reducing expensive indium or replacing with an inexpensive transparent electrode material.

Although described above with reference to embodiments of the present invention, those skilled in the art can variously modify and change the present invention without departing from the spirit and scope of the invention described in the claims below. You will understand.

Claims (40)

A gate electrode disposed on the substrate; A gate insulating film disposed on the substrate including the gate electrode; A semiconductor layer pattern disposed on the gate insulating layer corresponding to the gate electrode and including an organic-inorganic composite material mixed with an organic semiconductor material and an inorganic semiconductor material; A source electrode on the semiconductor layer pattern; And A drain electrode disposed on the semiconductor layer pattern and corresponding to the source electrode; The inorganic semiconductor material is at least one selected from the group consisting of zinc oxide (ZnO), gallium nitride (GaN) and silicon powder (Si Powder). The method of claim 1, The organic semiconductor material is a thin film transistor, characterized in that poly (3-hexylthiophene (P3HT) or pentacene (pentacene). delete The method of claim 1, The semiconductor layer pattern is An active layer pattern including an organic-inorganic composite material in which an organic semiconductor material and an inorganic semiconductor material are mixed; And And a ohmic contact layer pattern disposed separately on both ends of the active layer pattern and further adding impurities to the organic-inorganic composite material. The method of claim 1, At least one of the gate electrode, the source electrode, and the drain electrode includes an organic-inorganic conductive composite. 6. The method of claim 5, The organic-inorganic conductive composite material includes a thin film transistor comprising a conductive organic material, an inorganic semiconductor material and a conductive inorganic material. The method of claim 6, The conductive organic material may be poly (p-phenylene) (PPP), poly (p-phenylenevinylene) (poly), polypyrrole, N , N'-di-1-naphthyl-N-N'-diphenyl-1-1'-biphenyl-4,4'diami (N, N'-di-1-naphthyl-N, N'- diphenyl-1,1'-biphenyl-4,4'diamine; NPD) and poly (3,4-ethylenedioxythiophene) -polystyrenesulfonate) (poly (3,4-ethylenedioxythiophene) -poly (styrene sulfonate); PEDOT: PSS) at least one selected from the group consisting of. The method of claim 6, The conductive inorganic material is at least one selected from the group consisting of aluminum (Al), copper (Cu), indium (In), gallium (Ga) and boron (B). The method of claim 6, And the inorganic semiconductor material is zinc oxide (ZnO). The method of claim 1, The gate insulating film may include an organic-inorganic insulating composite material in which an organic insulating material and an inorganic semiconductor material having a high dielectric constant (high-K) are mixed. 11. The method of claim 10, The organic insulating material is at least any one selected from the group consisting of polyvinyl pyrrolidone (PVP), polymethylmethacrylate (PMMA), polyvinyl alcohol (PVA), and photoacryl Thin film transistor, characterized in that one. 11. The method of claim 10, The inorganic semiconductor material having the high-k material is at least one selected from the group consisting of silicon oxide (SiOx), zirconium oxide (ZrOx), and hafnium oxide (HfOx). . The method of claim 1, And a passivation layer on the gate insulating layer including the source electrode and the drain electrode. The method of claim 13, The passivation layer is a thin film transistor comprising an organic-inorganic insulating composite material containing zinc oxide. 15. The method of claim 14, The organic-inorganic insulating composite material is polyvinyl pyrrolidone (PVP), polymethyl methacrylate (Polymethylmethacrylate; PMMA), polyvinyl alcohol (PVA) and photoacryl (Photoacryl) in the group consisting of At least one selected. Forming a gate electrode on the substrate; Forming a gate insulating film on the substrate including the gate electrode; Forming a semiconductor layer pattern including an organic-inorganic composite material in which an organic semiconductor material and an inorganic semiconductor material are mixed on the gate insulating layer corresponding to the gate electrode; And Forming a source electrode and a drain electrode disposed on the semiconductor layer pattern to correspond to the source electrode; The inorganic semiconductor material is at least one selected from the group consisting of zinc oxide (ZnO), gallium nitride (GaN) and silicon powder (Si Powder). 17. The method of claim 16, Forming the semiconductor layer pattern, Performing a coating process on the gate insulating film to form a semiconductor layer including an organic-inorganic composite material; Forming a photoresist pattern by performing an exposure and development process on the semiconductor layer; And And etching the semiconductor layer according to the photoresist pattern. The method of claim 17, The coating process is a method of manufacturing a thin film transistor, characterized in that at least one method selected from the group consisting of spin coating method, spray coating method, dip coating method, inkjet printing method and doctor blade method. 17. The method of claim 16, Forming the gate electrode, Performing a coating process on the substrate to form a conductive layer including an organic-inorganic conductive composite material; Forming a photoresist pattern on the conductive layer through an exposure and development process; And And etching the conductive layer according to the photoresist pattern. 17. The method of claim 16, Forming the source electrode and the drain electrode, Forming a conductive layer including an organic-inorganic conductive composite material by performing a coating process on the gate insulating layer including the semiconductor layer pattern; Forming a photoresist pattern on the conductive layer through an exposure and development process; And And etching the conductive layer according to the photoresist pattern. 17. The method of claim 16, The forming of the gate insulating film may include coating an organic-inorganic insulating composite material including an inorganic semiconductor material having a high dielectric constant (high-K) on a substrate including the gate electrode. Method of manufacturing thin film transistor. 17. The method of claim 16, And forming a passivation layer on the gate insulating layer including the source electrode and the drain electrode. 23. The method of claim 22, The protective film is a method of manufacturing a thin film transistor, characterized in that formed by coating an organic-inorganic insulating composite material containing zinc oxide. 17. The method of claim 16, The semiconductor layer pattern is An active layer pattern including an organic-inorganic composite material mixed with an organic semiconductor material and an inorganic semiconductor material, and an ohmic contact layer in which impurities are further added to the organic-inorganic composite material and disposed separately on both ends of the active layer pattern. Method of manufacturing a thin film transistor comprising the step of forming a pattern. 25. The method of claim 24, The active layer pattern, the ohmic contact layer pattern, the source electrode and the drain electrode are formed by performing a patterning process using one mask. A substrate on which the thin film transistor is disposed; A passivation pattern disposed on the substrate including the thin film transistor and exposing a portion of the thin film transistor; And A pixel electrode disposed on the passivation pattern and electrically connected to the thin film transistor, the pixel electrode having an organic-inorganic conductive composite material mixed with a conductive organic material, an inorganic semiconductor material, and a conductive inorganic material, The inorganic semiconductor material is at least one selected from the group consisting of zinc oxide (ZnO), gallium nitride (GaN), and silicon powder (Si Powder). 27. The method of claim 26, The conductive organic material may be poly (p-phenylene) (PPP), poly (p-phenylenevinylene) (poly), polypyrrole, N , N'-di-1-naphthyl-N-N'-diphenyl-1-1'-biphenyl-4,4'diami (N, N'-di-1-naphthyl-N, N'- diphenyl-1,1'-biphenyl-4,4'diamine; NPD) and poly (3,4-ethylenedioxythiophene) -polystyrenesulfonate) (poly (3,4-ethylenedioxythiophene) -poly (styrene sulfonate); And at least one selected from the group consisting of PEDOT: PSS. 27. The method of claim 26, The conductive inorganic material is at least one selected from the group consisting of aluminum (Al), copper (Cu), indium (In), gallium (Ga), and boron (B). delete 27. The method of claim 26, The passivation pattern includes a organic-inorganic composite material having zinc oxide. 27. The method of claim 26, The protective layer pattern is at least any one selected from the group consisting of polyvinyl pyrrolidone (PVP), polymethylmethacrylate (PMMA), polyvinyl alcohol (PVA), and photoacryl A display device comprising an organic-inorganic composite material having one. 27. The method of claim 26, The thin- A gate electrode disposed on the substrate; A gate insulating film disposed on the substrate including the gate electrode; A semiconductor layer pattern disposed on the gate insulating layer corresponding to the gate electrode; A source electrode on the semiconductor layer pattern; And And a drain electrode disposed on the semiconductor layer pattern to correspond to the source electrode. 33. The method of claim 32, The semiconductor layer pattern may include an organic-inorganic composite material in which an organic semiconductor material and an inorganic semiconductor material are mixed. 33. The method of claim 32, And at least one of the gate electrode, the source electrode, and the drain electrode includes an organic-inorganic conductive composite material in which a conductive organic material, an inorganic semiconductor material, and a conductive inorganic material are mixed. 33. The method of claim 32, And the gate insulating film includes an organic-inorganic composite material having an inorganic semiconductor material having a high dielectric constant (high-K). Forming a thin film transistor on the substrate; Forming a protective layer pattern exposing a portion of the thin film transistor on a substrate including the thin film transistor; And Forming a pixel electrode electrically connected to the thin film transistor on the passivation layer pattern, the pixel electrode having an organic-inorganic conductive composite material; The inorganic semiconductor material is at least one selected from the group consisting of zinc oxide (ZnO), gallium nitride (GaN), and silicon powder (Si Powder). 37. The method of claim 36, Forming the pixel electrode, Forming a conductive layer including an organic-inorganic conductive composite material on the passivation layer pattern; Forming a photoresist pattern on the conductive layer through an exposure and development process; And And etching the conductive layer according to the photoresist pattern. 39. The method of claim 37, And the conductive layer is at least one method selected from the group consisting of a spin coating method, a spray coating method, a dip coating method, an inkjet printing method, and a doctor blade method. 37. The method of claim 36, Forming the protective film pattern Forming a protective film by coating an organic-inorganic insulating composite material on a substrate including the thin film transistor; And And forming a contact hole partially exposing the thin film transistor in the passivation layer. 37. The method of claim 36, Forming the thin film transistor, Forming a gate electrode on the substrate; Forming a gate insulating film on the substrate including the gate electrode; Forming a semiconductor layer pattern on the gate insulating layer corresponding to the gate electrode; And Forming a source electrode and a drain electrode corresponding to the source electrode on the semiconductor layer pattern, And at least one of the gate electrode, the gate insulating layer, the semiconductor layer pattern, the source electrode, and the drain electrode includes an organic-inorganic composite material.

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