KR101138795B1 - 감광성 페이스트 조성물 이를 이용하여 제조한 플라즈마 디스플레이 전극 - Google Patents
감광성 페이스트 조성물 이를 이용하여 제조한 플라즈마 디스플레이 전극 Download PDFInfo
- Publication number
- KR101138795B1 KR101138795B1 KR1020080131994A KR20080131994A KR101138795B1 KR 101138795 B1 KR101138795 B1 KR 101138795B1 KR 1020080131994 A KR1020080131994 A KR 1020080131994A KR 20080131994 A KR20080131994 A KR 20080131994A KR 101138795 B1 KR101138795 B1 KR 101138795B1
- Authority
- KR
- South Korea
- Prior art keywords
- photoinitiator
- paste composition
- weight
- photosensitive paste
- plasma display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- 150000001875 compounds Chemical class 0.000 claims description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 13
- 239000002904 solvent Substances 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 9
- 239000011651 chromium Substances 0.000 claims description 8
- 238000000206 photolithography Methods 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
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- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
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- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 4
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- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 claims description 3
- 239000012965 benzophenone Substances 0.000 claims description 3
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- 125000001462 1-pyrrolyl group Chemical group [*]N1C([H])=C([H])C([H])=C1[H] 0.000 claims 1
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- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims 1
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- RUJPNZNXGCHGID-UHFFFAOYSA-N (Z)-beta-Terpineol Natural products CC(=C)C1CCC(C)(O)CC1 RUJPNZNXGCHGID-UHFFFAOYSA-N 0.000 description 1
- CWRBWLKXTXSMEH-UHFFFAOYSA-N 1-[9-ethyl-6-(2-methylbenzoyl)carbazol-3-yl]ethanone Chemical compound C=1C=C2N(CC)C3=CC=C(C(C)=O)C=C3C2=CC=1C(=O)C1=CC=CC=C1C CWRBWLKXTXSMEH-UHFFFAOYSA-N 0.000 description 1
- GKZPEYIPJQHPNC-UHFFFAOYSA-N 2,2-bis(hydroxymethyl)propane-1,3-diol prop-2-enoic acid Chemical compound OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OCC(CO)(CO)CO GKZPEYIPJQHPNC-UHFFFAOYSA-N 0.000 description 1
- JJBFVQSGPLGDNX-UHFFFAOYSA-N 2-(2-methylprop-2-enoyloxy)propyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(C)COC(=O)C(C)=C JJBFVQSGPLGDNX-UHFFFAOYSA-N 0.000 description 1
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- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- LWRBVKNFOYUCNP-UHFFFAOYSA-N 2-methyl-1-(4-methylsulfanylphenyl)-2-morpholin-4-ylpropan-1-one Chemical compound C1=CC(SC)=CC=C1C(=O)C(C)(C)N1CCOCC1 LWRBVKNFOYUCNP-UHFFFAOYSA-N 0.000 description 1
- DBCAQXHNJOFNGC-UHFFFAOYSA-N 4-bromo-1,1,1-trifluorobutane Chemical compound FC(F)(F)CCCBr DBCAQXHNJOFNGC-UHFFFAOYSA-N 0.000 description 1
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- SAPGBCWOQLHKKZ-UHFFFAOYSA-N 6-(2-methylprop-2-enoyloxy)hexyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCCCCCOC(=O)C(C)=C SAPGBCWOQLHKKZ-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
- H01J11/10—AC-PDPs with at least one main electrode being out of contact with the plasma
- H01J11/12—AC-PDPs with at least one main electrode being out of contact with the plasma with main electrodes provided on both sides of the discharge space
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
- H01J11/20—Constructional details
- H01J11/22—Electrodes, e.g. special shape, material or configuration
- H01J11/24—Sustain electrodes or scan electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
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- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Gas-Filled Discharge Tubes (AREA)
- Materials For Photolithography (AREA)
Abstract
Description
Claims (15)
- 전도성 분말, 유리프릿, 유기바인더, 광중합성 화합물, 광개시제 및 용제를 포함하는 전극 형성용 페이스트 조성물에 있어서, 상기 광개시제로서 400 ~ 500nm 파장영역에서 반응하는 광개시제를 포함하는 감광성 페이스트 조성물.
- 제 1 항에 있어서,상기 페이스트 조성물은(A) 전도성 분말 30 ~ 90중량%,(B) 유리프릿 1 ~ 20중량%,(C) 유기바인더 1 ~ 20중량%,(D) 광개시제 0.1 ~ 15중량%,(E) 광중합성 화합물 1 ~ 20중량% 및(F) 용제를 잔부량으로 포함하는 것을 특징으로 하는 감광성 페이스트 조성물.
- 제 1 항에 있어서,상기 전도성 분말은 금, 은, 구리, 니켈, 팔라듐, 백금, 알루미늄 중 선택되 는 하나 또는 이들의 합금 분말인 것을 특징으로 하는 감광성 페이스트 조성물.
- 제 1 항에 있어서,상기 유리프릿은 연화 온도가 300 ~ 500℃이고, 550nm 파장 영역에서 투과도가 65%이하인 것을 특징으로 하는 감광성 페이스트 조성물.
- 제 1 항에 있어서,상기 유리프릿은 400 ~ 700℃의 온도에서 결정화도가 5 ~ 80%인 것을 특징으로 하는 감광성 페이스트 조성물.
- 제 1 항에 있어서,상기 유기 바인더는 아크릴계 고분자, 셀룰로오스계 고분자를 단독 또는 2종 이상 혼합한 것을 특징으로 하는 감광성 페이스트 조성물.
- 제 1 항에 있어서,상기 400 ~ 500nm 파장영역에서 반응하는 광개시제는 비스(.에타. 5-2, 4-시클로펜타디엔-1-일)비스[2,6-디플루오로-(1H-피롤-1-일)페닐]티타늄인 메탈로센계 화합물을 포함하는 것을 특징으로 하는 감광성 페이스트 조성물.
- 삭제
- 제 1 항에 있어서,상기 전극 형성용 페이스트 조성물 100 중량부에 대하여, 흑색안료 1 ~ 20중량부를 더 포함하는 것을 특징으로 하는 감광성 페이스트 조성물.
- 제 9 항에 있어서,상기 흑색안료는 철, 코발트, 구리, 크롬, 망간, 알루미늄, 니켈을 주성분으로 하는 금속 산화물 또는 이들의 복합 금속 산화물 중 선택된 1종 이상인 것을 특 징으로 하는 감광성 페이스트 조성물.
- 전도성 분말, 유리프릿, 유기바인더, 광중합성 화합물, 광개시제 및 용제를 포함하되, 상기 광개시제는 400 ~ 500nm 파장영역에서 반응하는 제 1 광개시제 및 200 ~ 400nm 파장영역에서 반응하는 제 2 광개시제를 포함하는 감광성 페이스트 조성물.
- 제 11 항에 있어서,상기 제 1 광개시제 및 제 2 광개시제의 혼합비율은 10:1 내지 1:10인 것을 특징으로 하는 감광성 페이스트 조성물.
- 제 11 항에 있어서,상기 제 2 광개시제는 벤조페논계, 아세토페논계, 트리아진계 화합물로 이루어진 군으로부터 선택된 1종 이상인 것을 특징으로 하는 감광성 페이스트 조성물.
- 제1항 내지 제7항, 제9항 내지 제13항 중 어느 한 항에 기재된 감광성 페이스트 조성물을 이용하여 포토리소그래피법(Photolithography)으로 제조한 것을 특징으로 하는 플라즈마 디스플레이 전극.
- 제 14 항의 플라즈마 디스플레이 전극을 포함하는 것을 특징으로 하는 플라즈마 디스플레이 패널.
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KR101432604B1 (ko) * | 2011-11-16 | 2014-08-22 | 제일모직주식회사 | 흑색 감광성 수지 조성물 및 이를 이용한 차광층 |
KR101985769B1 (ko) * | 2013-03-15 | 2019-06-04 | 동우 화인켐 주식회사 | 마스크리스 디지털 노광 방식을 통한 컬러 필터의 제조 방법 |
US20190070748A1 (en) * | 2017-09-06 | 2019-03-07 | Corning Incorporated | Dense glass-ceramic articles via additive manufacture of glass frit |
KR102244473B1 (ko) * | 2018-01-15 | 2021-04-23 | 삼성에스디아이 주식회사 | 감광성 수지 조성물, 이를 이용한 감광성 수지막 및 컬러필터 |
CN111584155B (zh) * | 2020-05-29 | 2021-12-03 | 宁波鑫智达新材料有限公司 | 一种应用于陶瓷滤波器的导电银浆及其制备方法 |
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KR20080071579A (ko) * | 2005-11-30 | 2008-08-04 | 도레이 가부시끼가이샤 | 유리 페이스트 및 그것을 이용한 디스플레이의 제조 방법,및 디스플레이 |
KR20090009092A (ko) * | 2007-07-18 | 2009-01-22 | 다이요 잉키 세이조 가부시키가이샤 | 감광성 조성물 및 그의 소성물을 포함하는 패턴 |
US20090035452A1 (en) * | 2004-07-22 | 2009-02-05 | Toray Industries, Inc. | Photosensitive paste and manufacturing method of member for display panel |
JP2009037232A (ja) * | 2007-07-09 | 2009-02-19 | Jsr Corp | 感光性ペースト組成物およびパターン形成方法 |
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US20090035452A1 (en) * | 2004-07-22 | 2009-02-05 | Toray Industries, Inc. | Photosensitive paste and manufacturing method of member for display panel |
KR20080071579A (ko) * | 2005-11-30 | 2008-08-04 | 도레이 가부시끼가이샤 | 유리 페이스트 및 그것을 이용한 디스플레이의 제조 방법,및 디스플레이 |
JP2009037232A (ja) * | 2007-07-09 | 2009-02-19 | Jsr Corp | 感光性ペースト組成物およびパターン形成方法 |
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