KR101089211B1 - Photoresist stripper composition for manufacture of LCD containing primary alkanol amine - Google Patents

Abstract

The present invention relates to a photoresist stripper composition, and to an integrated photoresist stripper that can be used for all TFT-LCD processes. More specifically, (a) 1 to 20% by weight of primary alkanol amine; (b) 10-60 weight percent alcohol; (c) 0.1-50% by weight of water; (d) 5-50% by weight of a polar organic solvent; And (e) 0.01 to 3% by weight of a corrosion inhibitor. The stripper composition according to the present invention is excellent in the ability to remove the modified photoresist in progress, can be applied simultaneously to aluminum and copper wiring, can be introduced into organic film and COA process, and has a boiling point of 150 ℃ or higher alcohols and water and When used in combination, it can improve corrosion protection and increase the use time.

Description

COMPOSITION OF STRIPPING SOLUTION FOR LIQUID CRYSTAL DISPLAY PROCESS PHOTORESIST COMPRISING PRIMARY ALKANOLAMINE}

The present invention relates to a photoresist stripper composition, and to an integrated photoresist stripper that can be used for all TFT-LCD processes.

In the manufacturing process of a flat panel display (FPD), a photo-lithography process is widely used to form a predetermined pattern on a substrate. The photolithography process is largely composed of a series of processes such as an exposure process, a dry or wet etching process, and ashing. A photoresist is applied and exposed on a substrate, and then dry or wet etching is performed. To form a pattern. At this time, the photoresist remaining on the metal wiring is removed using a photoresist stripper.

The composition of the photoresist stripping agents for the LCD process used up to now is mainly organic, which does not contain water, and a mixture of primary and secondary alkanol amines, polar solvents or glycols has been used. In general, the photoresist remaining after the etching process is peeled off using the photoresist stripping agent described above, and then washed with water. In this case, metal wiring is corroded, and resorption of the photoresist occurs, and impurities are generated. This is because when the alkanol amines are mixed with water, they generate hydroxide ions, which greatly increases the corrosiveness of the metal including aluminum, and thus requires a special corrosion inhibitor to prevent corrosion of the metal wiring. However, the conventional corrosion inhibitors have a problem that the cost is high and economical. In recent years, in the manufacture of flat panel displays such as LCDs, an increase in process costs is inevitable.

In addition, in the case of the TFT LCD Al wiring film, the modified photoresist needs to be peeled off. In the case of the weakly basic amine, the photoresist removing ability may be degraded and thus the photoresist peeling may not be perfect. Patent No. 10-0950779 discloses a photoresist stripper composition in which the weakly basic alkanol amine comprises a tertiary alkanol amine. However, there was a problem in that the peeling of the modified photoresist was not perfect as a result of using the composition.

On the other hand, when using a strong base alkanol amine activated by water is damaged due to the Al and Cu wiring film is inevitable to solve this problem, in the case of the conventional organic LCD stripping solution to add a small amount of corrosion inhibitors. However, in the case of the photoresist stripping solution containing water, when the TFT-LCD photoresist stripping process is carried out, the water volatilizes according to the use time, so that the content of the stripping solution water changes, and the corrosion resistance of the corrosion inhibitor and the photoresist stripping ability change rapidly. . Therefore, there have been many reports on the peeling liquid composition for LCD which added the strong base alkanol amine and the corrosion inhibitor in the organic peeling liquid composition, but it is difficult to find the peeling liquid composition for the aqueous LCD using the strong basic alkanol amine.

Accordingly, the present inventors have attempted to solve the above-mentioned problems by developing a relatively stable anti-corrosion and photoresist releasing agent using an azole compound containing a mercapto group as a corrosion inhibitor.

An object of the present invention is to use a azole compound containing a mercapto group as a stripping liquid composition additive for TFT-LCD as a corrosion inhibitor to maintain the corrosion resistance and photoresist stripping ability of Cu and Al even when the water content changes It is to provide an aqueous photoresist release agent.

In order to achieve the object of the present invention in one embodiment (a) 1 to 20% by weight of a primary alkanol amine; (b) 10-60 weight percent alcohol; (c) 0.1-50% by weight of water; (d) 5-50% by weight of a polar organic solvent; And (e) provides a photoresist stripper composition for LCD production comprising 0.01 to 3% by weight of a corrosion inhibitor.

In another embodiment, the primary alkanol amine is monoethanol amine, monoisopropanol amine, 2-amino-2-methyl-1-propanol (2-amino-2-methyl-1 -propanol), 2-methylaminoethanol (2-Methylaminoethanol) and 3-aminopropanolamine (3-Aminopropanol amine) provides a photoresist stripper composition for LCD, characterized in that at least one selected from the group consisting of.

In another embodiment, the alcohol is ethylene glycol (Ethylene Glycol), 1-hexanol (1-Hexanol), octanol (Octanol), 1-heptanol (1-Heptanol), 1-decanol (1-Decanol) ), 2-heptanol (2-Heptanol) and tetrahydrofurfuryl alcohol (Tetrahydrofurfurylalcohol) provides a photoresist stripper composition for LCD, characterized in that at least one selected from the group consisting of.

In another embodiment, the preservative is a C ₅ -C ₁₀ hetero ring in which the carbon constituting the ring is substituted with one or more atoms selected from the group consisting of N, O and S, and a mercapto group on the carbon atom of the hetero ring. It provides a photoresist stripper composition for LCD production characterized in that the substituted.

In another embodiment, the hetero ring provides a photoresist stripper composition for LCD production, characterized in that the imidazole.

In another embodiment, the preservative is 2-mercaptobenzimidazole, 2,5-dimercapto-1,3,4-thiadiazole (2,5-Dimercapto-1,3, It provides a photoresist stripper composition for LCD production, characterized in that at least one selected from the group consisting of 4-thiadizole) and 2-mercaptobenzothiazole.

In another embodiment, the polar organic solvent is a photoresist stripping for manufacturing LCDs containing glycols having the formula RO (CH ₂ CH ₂ O) H, wherein R is any of linear, branched or circular hydrocarbons. It provides a liquid composition.

In another embodiment, the polar organic solvent is N-methylpyrollidone (NMP), sulfolane, dimethyl sulfoxide (DMSO), dimethylacetamide (Dimethylacetamide, DMAC) and mono Provided is a photoresist stripper composition for LCD production, characterized in that at least one member selected from the group consisting of methylmethylamide (Monomethylformamide).

In one embodiment, (a) 1 to 20% by weight primary alkanol amine; (b) 10-60 weight percent alcohol; And (c) provides a photoresist stripper composition for LCD production comprising 5 to 70% by weight of a polar organic solvent.

In another embodiment, the primary alkanol amine provides a photoresist stripper composition for LCD production, characterized in that 2-amino-2-methyl-1-propanol (2-amino-2-methyl-1-propanol). do.

In another embodiment, the alcohol is ethylene glycol (Ethylene Glycol), 1-hexanol (1-Hexanol), octanol (Octanol), 1-heptanol (1-Heptanol), 1-decanol (1-Decanol) ), 2-heptanol (2-Heptanol) and tetrahydrofurfuryl alcohol (Tetrahydrofurfurylalcohol) provides a photoresist stripper composition for LCD, characterized in that at least one selected from the group consisting of.

Hereinafter, the present invention will be described in detail.

In the present invention, the photoresist stripper component of the present invention uses an azole compound containing a mercapto group in an amount of 0.01 to 3% by weight as a corrosion inhibitor. If the weight ratio of the corrosion inhibitor is too low, there is almost no corrosion protection effect on the metal wiring film. Especially, when the content of the corrosion inhibitor is low, the reduction of the corrosion protection effect is severe as the amount of water decreases. If the weight ratio of the corrosion inhibitor is too high, the photoresist stripping ability becomes weak. When using 3% by weight of the corrosion inhibitor in the composition of the present invention was confirmed that there is no abnormality in the corrosion protection and peeling ability. However, since the corrosion inhibitor is expensive, it is not necessary to add an excessive amount more than necessary.

In addition, other corrosion inhibitors may be added to further improve the corrosion protection of the Mo, Al, and Cu elements of the LCD pattern. And primary and secondary alkanol amines (eg, monoethanolamine (MEA), monoisopropanolamine (MIPA), 2-methylaminoethanol (2-Methylaminoethanol, 2) having a pH of 11 (based on 10% aqueous solution) or more. -MAE), diethylethanolamine (DEEOA) and MDEA, MDMA, DEEOA mixed solution) may be 1 to 20% by weight. The water content may be 0.1-50% by weight, and the alcohol content (eg, ethylene glycol (EG, boiling point 197.7 ° C.) may be 10-60% by weight. -methylpyrollidone, NMP), dimethyl sulfoxide (dimethylsulfoxide, DMSO), dimethylacetamide (dimethylacetamide, DMAC) and N - dimethylformamide (N -Methylformamide, NMF) may be used alone or in combination 5-50% by weight and the like. In addition, glycols include diethyleneglycolmonoethylether (EDG), diethyleneglycolmonobutylether (BDG), and triethyleneglycolther (TEG) to improve cleaning power after peeling. The weight ratio is 5 to 50% by weight is appropriate, too little can not dissolve the hardened photoresist, on the contrary too much has the disadvantage of being expensive.

When the weight ratio of the primary alkanol amine having a pH of 11 or higher and a boiling point of 150 ° C or higher to the stripping solution is 1 to 20% by weight, if it is less than 1% by weight, there is a problem in the deterioration of the modified photoresist. A problem arises in peeling force. In case of more than 20% by weight, a corrosion inhibitor should be added relatively, there is a fear of corrosion of metal wiring film, and the increase of manufacturing cost is caused. The content of water is 0.1 to 50% by weight, alcohol (boiling point 150 ℃ or more, (e.g. ethylene glycol (Ethylene Glycol, EG, boiling point 197.7 ℃), tetrahydrofurfurylalcohol, THFA boiling point 178 ℃), etc.) 10 to 60% by weight is appropriate, and too small a ratio may lower the corrosion protection ability of the Cu wiring film, and too high a water ratio may cause corrosion of Al metal wiring and a photoresist stripping effect. If alcohol is not added, it does not affect corrosion prevention and peeling ability, but water is volatilized due to process temperature (40 ℃ or higher) and exhaust pressure in equipment during peeling process, which shortens the life of peeling liquid. Therefore, what is necessary is just to mix and use an appropriate amount of alcohol according to the use time of peeling liquid at the time of an LCD photoresist peeling process.

The photoresist stripper composition according to the present invention is an aqueous system containing water. In the aqueous stripping solution containing water, the basicity of the amine is more activated than the organic stripping solution. Therefore, in the process of the flat display panel, even if a process temperature lower than that of the organic LCD stripper is generally used, the removal ability of the modified photoresist remaining after the dry etching, implant and hard bake process is applied. Outstanding Application of low process temperatures can reduce the manufacturing cost of flat panel displays. In addition, the present invention can be applied to the aluminum and copper wiring at the same time using the optimal corrosion inhibitor for the peeling liquid composition, it can be introduced into the organic film and COA process.

In addition, one or more glycols may be mixed to effectively assist in peeling the photoresist. Glycols serve to spread the dissolved photoresist to the release agent and help to remove it quickly. In the case of the glycols mentioned above, the structure is RO (CH ₂ CH ₂ O) H, wherein 'R' refers to any of linear hydrocarbons, branched hydrocarbons and circular hydrocarbons.

More specifically, diethyleneglycolmonomethylether (MDG), diethyleneglycolmonoethylether (EDG), diethyleneglycolmonobutylether (BDG) and triethyleneglycol ether (TEG), etc. Can be used.

The composition ratio of glycol is suitable in the weight ratio of 10 to 70% by weight in the total composition ratio, it can be used by mixing one or two or more of the above corresponding to RO (CH ₂ CH ₂ O) H.

On the other hand, 2-amino-2-methyl-1-propanol (hereinafter referred to as AMP), which has steric hindrance even with primary strongly basic alkanol amines, is obtained by adding only alcohols without water. The wiring corrosion of Al and Cu can be prevented, without peeling a modified photoresist, without using a corrosion inhibitor in organic composition. In the case of AMP, since it is a primary amine, water and OH ^- are formed by the following reaction (1) to corrode the metal wiring film. In the absence of water, the corrosion reaction between amines and metals is shown in Eq. (2). In this case, AMP is the primary amine, but the R group of Formula (2) is very large, thereby causing steric hindrance to inhibit the corrosion reaction. On the other hand, since AMP is a primary strong basic amine, it is advantageous to peel off the modified photoresist.

(1) Corrosion Reaction of Amine with Aqueous Solution

_{RNH 2 + H 2 O → RNH} 3 + + OH -

^{Cu 2+ + 2OH - → Cu (} OH) 2 (s)

Cu (OH) ₂ (s) + 4RNH ₃ ⁺ → [Cu (RNH ₂ ) ₄ ]

(2) Corrosion Reaction of Amine with Organic Solution

Cu ²⁺ + 4RNH ₂ → Cu (RNH ₂ ) ₄ ²

Therefore, the present invention is excellent in corrosion prevention and peeling ability and excellent removal ability of modified photoresist even in the process of TFT-LCD photoresist stripping process even though water is contained in copper and aluminum wiring, and the advantages of the present invention It is possible to provide a photoresist stripping composition that retains the disadvantages and overcomes the disadvantages.

The photoresist stripper according to the present invention is excellent in the removal ability of the modified photoresist in the process of semiconductor or flat panel display panel, can be applied to aluminum and copper wiring at the same time, can be introduced into organic film and COA process. When used in combination with alcohols and water with boiling point above 150 ℃, corrosion resistance can be improved and usage time can be increased.

1 is a representative photomicrograph produced by heat-treating the Al metal film wiring glass substrate without the photoresist at a temperature of 170 ℃ in an oven for 10 minutes.
FIG. 2 shows a microscope in which the photoresist is not removed when the removal solution temperature is maintained at 50 ° C., and the substrate is immersed for 30 seconds to evaluate the degree of removal of the modified photoresist. Representative picture. (Corresponds to X)
FIG. 3 shows that part of the photoresist is not removed when the degree of removal of the denatured photoresist is maintained by maintaining the stripper temperature at 50 ° C. and immersing the substrate for 30 seconds in a heat treatment fabrication (170 ° C./10 minutes). Representative photomicrograph. (Corresponds to △)
4 is a representative photomicrograph of the photoresist completely removed when the temperature of the stripping solution is maintained at 50 ° C, and the heat treatment fabrication (170 ° C / 10 minutes) is immersed in the substrate for 30 seconds to evaluate the degree of removal of the modified photoresist. (Applies to ◎)
5 is a representative photograph taken with a SEM of the Cu metal film wiring glass substrate from which the photoresist is not removed.
FIG. 6 is a SEM representative photograph corresponding to (?) When the peeling solution temperature is maintained at 50 ° C., and the Cu glass substrate on which the photoresist is not removed is immersed for 10 minutes to evaluate the degree of corrosion of the Cu surface.
FIG. 7 is a SEM representative photograph corresponding to (?) When the degree of corrosion of the Cu surface is evaluated by maintaining the peeling solution temperature at 50 ° C. and immersing the Cu glass substrate from which the photoresist is not removed for 10 minutes.
FIG. 8 is a SEM representative photograph corresponding to (Δ) when the peeling solution temperature is maintained at 50 ° C., and the Cu glass substrate on which the photoresist is not removed is immersed for 10 minutes to evaluate the degree of corrosion of the Cu surface.
9 is a representative SEM image corresponding to (X) when the degree of corrosion of the Cu surface is evaluated by maintaining the stripper temperature at 50 ° C. and immersing the Cu glass substrate from which the photoresist is not removed for 10 minutes.

Hereinafter, the present invention will be described in detail by the following examples. However, the following examples are merely to illustrate the invention, but the content of the present invention is not limited by the following examples.

Example

Example 1.

The modified photoresist stripping ability and the corrosion preventing ability test for evaluating the performance of the photoresist stripping liquid composition of the present invention were conducted by the following method. The peeling liquid composition contains 1% by weight of 2-mercaptobenzimidazole as a corrosion inhibitor, and the remaining constituents such as specific amines and water and the composition (% by weight) are shown in Table 1 below. The Al metal film wiring glass substrate in which the photoresist was not removed was produced by heat-processing for 10 minutes at 160 degreeC in oven. While maintaining the prepared stripper composition at 50 ° C, the prepared substrate was immersed in the stripper composition for 30 seconds to evaluate the degree of removal of the modified photoresist.

In addition, the Cu metal film wiring glass substrate was immersed in the peeling solution composition for 10 minutes while maintaining the peeling solution composition at 50 ° C to evaluate the corrosion of the Cu wiring film. As evaluation criteria, a Cu metal film wiring glass substrate immersed in acetone for 10 minutes was used as a control (Table 1).

The experimental results are shown in Table 1 with the following symbols.

[Al wiring modified photoresist (PR) peeling ability]

◎: denatured photoresist is completely removed

△: trace amount of denatured photoresist remains

X: More than 1/3 of denatured photoresist remains

[Cu wiring corrosion degree]

◎: Corrosion degree same as control substrate

○: The film thickness is the same as that of the control substrate, and a slight corrosion occurs on the surface

△: decrease in film thickness and corrosion on the surface compared to the control substrate

X: Cu wiring film is corroded to reduce the film thickness by more than 1/2

division Amine type Amine water EG THFA NMP (5%) + EDG (48%) Al wiring modified PR peeling capacity Cu wiring
corrosion One MEA 7 20 20 - 53 ◎ ◎ 2 MEA 7 20 - 20 53 ◎ ◎ 3 MIPA 7 20 20 - 53 ◎ ◎ 4 MIPA 7 20 - 20 53 ◎ ◎ 5 DIPA 7 20 20 - 53 △ ◎ 6 DIPA 7 20 - 20 53 △ ◎ 7 TIPA 7 20 20 - 53 X ◎ 8 TIPA 7 20 - 20 53 X ◎ 9 2-MAE 7 20 - 20 53 ◎ ◎ 10 2-MAE 7 20 20 - 53 ◎ ◎ 11 MDEOA 7 20 20 - 53 X ◎ 12 MDEOA 7 20 - 20 53 X ◎ 13 DEEOA 7 20 20 - 53 X ◎ 14 DEEOA 7 20 - 20 53 X ◎ 15 AEEOA 7 20 20 - 53 △ ◎ 16 AEEOA 7 20 - 20 53 △ ◎ 17 3-APN 7 20 20 - 53 ◎ ◎ 18 3-APN 7 20 - 20 53 ◎ ◎

MEA: Monoethanol amine

MIPA: Monoisopropanol amine

DIPA: Diisopropanol amine

TIPA: Triisopropanol amine

AMP: 2-amino-2-methyl-1-propanol

2-MAE: 2- (Methylamino) ethanol

MDEOA: Methyldiethanol amine

DEEOA: Diethylethanol amine

AEEOA: Aminoethylethanol amine

3-APN: 3-Aminopropanol amine

MDEA: Methyldiethanolamine

MDMA: Methyldimethanolamine

EG: Ethylene Glycol

EDG: Diethyleneglycolmonoethylether

NMP: N-methylpyrollidone

THFA: Tetrahydrofurfurylalcohol

MBI: 2-mercaptobenzimidazole

As shown in Table 1, under the composition conditions of the present invention including 2-mercaptobenzimidazole as a corrosion inhibitor, a composition that satisfies the modified PR peeling ability and the Cu wiring corrosion preventing ability at the same time was obtained.

Comparative Example 1.

The experiment was carried out in the same manner as in Example 1 except that it did not contain a corrosion inhibitor (MBI, 2-mercaptobenzimidazole). The results are shown in Table 2, and the abbreviations described in Table 2 are as described above.

division Amine type Amine water EG THFA NMP (5%) + EDG (48%) Al wiring modified PR peeling capacity Cu wiring corrosion One MEA 7 20 20 - 53 ◎ X 2 MEA 7 20 - 20 53 ◎ X 3 MIPA 7 20 20 - 53 ◎ X 4 MIPA 7 20 - 20 53 ◎ X 5 DIPA 7 20 20 - 53 △ △ 6 DIPA 7 20 - 20 53 △ △ 7 TIPA 7 20 20 - 53 X ◎ 8 TIPA 7 20 - 20 53 X ◎ 9 AMP 7 20 - 20 53 ◎ X 10 AMP 7 20 20 - 53 ◎ X 11 2-MAE 7 20 - 20 53 ◎ X 12 2-MAE 7 20 20 - 53 ◎ X 13 MDEA 7 20 20 -   53 X ◎ 14 MDEA 7 20 - 20 53 X ◎ 15 MDMA 7 20 20 - 53 X ◎ 16 MDMA 7 20 - 20 53 X ◎ 17 DEEOA 7 20 20 - 53 X △ 18 DEEOA 7 20 - 20 53 X ◎ 19 AEEOA 7 20 20 - 53 △ X 20 AEEOA 7 20 - 20 53 △ ◎ 21 3-APN 7 20 20 - 53 ◎ X 22 3-APN 7 20 - 20 53 ◎ X

As shown in Table 2, under the condition that primary alkanol amine and water were used in the water-based photoresist and no Cu corrosion inhibitor was added, the deterioration of the modified photoresist or the Cu wiring corrosion resistance were significantly reduced.

Example 2.

The experiment was conducted in the same manner as in Example 1 except that only the type of Cu corrosion inhibitor or the content of alcohol was changed as shown in Table 3 below. The results are shown in Table 3.

division Cu preservative MEA water EG THFA NMP (5%) + EDG (48%) Cu wiring corrosion Remarks One BIMD 7 20 20 - 53 △ radish 2 BIMD 7 20 - 20 53 △ radish 3 IMD 7 20 20 - 53 △ radish 4 IMD 7 20 - 20 53 △ radish 5 4-MIMD 7 20 20 - 53 △ radish 6 4-MIMD 7 20 - 20 53 △ radish 7 BTA 7 20 20 - 53 ◎ Preservative Residue 8 BTA 7 20 - 20 53 ◎ Preservative Residue 9 TTA 7 20 20 - 53 ◎ Preservative Residue 10 TTA 7 20 - 20 53 ◎ Preservative Residue 11 MBI 7 20 20 - 53 ◎ radish 12 MBI 7 20 - 20 53 ◎ radish 13 2,5-DTA 7 20 20 - 53 ? radish 14 2,5-DTA 7 20 - 20 53 ? radish 15 MBT 7 20 20 - 53 ◎ radish 16 MBT 7 20 - 20 53 ◎ radish 17 MBI 7 30 10 - 53 ◎ radish 18 MBI 7 30 - 10 53 ◎ radish

BIMD: Benzimidazole

IMD: imidazole

4-MIMD: 4-methylimidazole

BTA: Benzotriazole

TTA: Tetrazole

MBI: 2-mercaptobenzimidazole

2,5-DTA: 2,5-Dimercapto-1,3,4-thiadiazole (2,5-Dimercapto-1,3,4-thiadizole)

MBT: 2-Mercaptobenzothiazole

As can be seen from the results of Table 3, when a compound containing no mercapto group was used as a corrosion inhibitor, corrosion of the wiring or a corrosion inhibitor remained after the process occurred, but 2-mercaptobenzimidazole (2-Mercaptobenzimidazole) occurred. ), 2,5-dimercapto-1,3,4-thiadiazole and 2-mercaptobenzothiazole, an azole compound containing a mercapto group such as 2-mercaptobenzothiazole is used as a corrosion inhibitor. Corrosion was almost completely prevented and no corrosion inhibitor remained.

Example 3.

Experiments were carried out in the same manner as in Example 1 using AMP (2-amino-2-methyl-1-propanol) with steric hindrance as the primary amine. The results are shown in Table 4.

division Amine Type Amine water EG THFA NMP (5%) + EDG (48%) Al wiring modification
PR peeling ability Cu wiring
corrosion One AMP 7 0 40 0 53 ◎ ◎ 2 AMP 7 0 0 40 53 ◎ ◎ 3 * AMP 7 20 20 0 53 ◎ ◎ 4* AMP 7 20 0 20 53 ◎ ◎

* In case of adding corrosion inhibitor

As shown in the results of Table 4, AMP completely removes the modified photoresist even when the metal wiring film caustic is not used in the organic composition in which not only water and a corrosion inhibitor are added, but also alcohols without water. It was confirmed that wiring corrosion of Cu can be effectively prevented.

As a result of the above experiments, when the aqueous sol-based photoresist stripping agent was used as an anti-corrosion agent, a strong base ethanolamine and a mercapto group-containing azole compound were able to completely deteriorate severely denatured photoresist and prevent corrosion of copper wiring. In addition, AMP, which is a primary alkanol amine with steric hindrance, does not contain water and does not corrode copper wiring even without a corrosion inhibitor when used in an organic composition.

While the present invention has been described with reference to exemplary embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted for elements thereof without departing from the scope of the invention. You will know. In addition, many modifications may be made to adapt a particular situation and material to the teachings of the invention without departing from the essential scope thereof. Accordingly, it is intended that the invention not be limited to the particular embodiment disclosed as the best mode contemplated for carrying out this invention, but that the invention be construed as including all embodiments falling within the scope of the appended claims.

Claims (11)

(a) 1 to 20% by weight primary alkanol amine;
(b) 10 to 60% by weight of a primary alcohol of boiling point 150 DEG C or higher;
(c) 0.1-50% by weight of water;
(d) 5-50% by weight of polar organic solvent; And
(e) A photoresist stripper composition for LCD production comprising 0.01 to 3% by weight of a corrosion inhibitor.
The method of claim 1,
The primary alkanol amines are monoethanol amine, monoisopropanol amine, 2-amino-2-methyl-1-propanol, 2-amino-2-methyl-1-propanol, 2 -Methylaminoethanol (2-Methylaminoethanol) and 3-aminopropanolamine (3-Aminopropanol amine) The photoresist stripper composition for LCD production, characterized in that at least one member selected from the group consisting of.
The method of claim 1,
The alcohol is ethylene glycol (Ethylene Glycol), 1-hexanol (1-Hexanol), octanol (Octanol), 1-heptanol (1-Heptanol), 1-decanol (1-Decanol), 2-heptanol (2-Heptanol) and tetrahydrofurfuryl alcohol (Tetrahydrofurfurylalcohol) photoresist stripper composition for LCD production, characterized in that at least one member selected from the group consisting of.
The method of claim 1,
The corrosion inhibitor is a C ₅ -C ₁₀ hetero ring in which the carbon constituting the ring is substituted with one or more atoms selected from the group consisting of N, O, and S, and a mercapto group is substituted for a carbon atom of the hetero ring. Photoresist stripper composition for LCD production.
The method of claim 4, wherein
The hetero ring is an imidazole, photoresist stripper composition for LCD production.
The method of claim 1,
The preservatives include 2-mercaptobenzimidazole, 2,5-dimercapto-1,3,4-thiadiazole (2,5-Dimercapto-1,3,4-thiadizole) and 2 -Mercaptobenzothiazole (2-Mercaptobenzothiazole) is a photoresist stripper composition for LCD production, characterized in that at least one member selected from the group consisting of.
The method of claim 1,
The polar organic solvent is a photoresist stripper composition for LCD production containing a glycol having a chemical formula of RO (CH ₂ CH ₂ O) H, wherein R is any one of a linear hydrocarbon, a branched hydrocarbon or a circular hydrocarbon.
The method of claim 1,
The polar organic solvent is N-methylpyrollidone (N-methylpyrollidone, NMP), sulfolane (Sulfolane), dimethyl sulfoxide (Dimethylsulfoxide, DMSO), dimethylacetamide (Dimethylacetamide, DMAC) and monomethylformamide (Monomethylformamide) Photoresist stripper composition for LCD production, characterized in that at least one selected from the group consisting of.
(a) 1 to 20% by weight primary alkanol amine;
(b) 10 to 60% by weight of a primary alcohol of boiling point 150 DEG C or higher; And
(c) 5 to 70% by weight of a polar organic solvent,
Photoresist stripping liquid composition for LCD production comprising water as a remainder.
10. The method of claim 9,
The primary alkanol amine is a 2-amino-2-methyl-1-propanol (2-amino-2-methyl-1-propanol) photoresist stripper composition for LCD production, characterized in that.
10. The method of claim 9,
The primary alcohol of boiling point 150 ℃ or more is ethylene glycol (Ethylene Glycol), 1-hexanol (1-Hexanol), octanol (Octanol), 1-heptanol (1-Heptanol), 1-decanol (1-Decanol) ), 2-heptanol (2-Heptanol) and tetrahydrofurfuryl alcohol (Tetrahydrofurfurylalcohol) is at least one selected from the group consisting of a photoresist stripper composition for LCD production.

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