KR101056514B1 - 나노 미립자층의 전해 처리 방법 - Google Patents
나노 미립자층의 전해 처리 방법 Download PDFInfo
- Publication number
- KR101056514B1 KR101056514B1 KR1020067014257A KR20067014257A KR101056514B1 KR 101056514 B1 KR101056514 B1 KR 101056514B1 KR 1020067014257 A KR1020067014257 A KR 1020067014257A KR 20067014257 A KR20067014257 A KR 20067014257A KR 101056514 B1 KR101056514 B1 KR 101056514B1
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- electrolyte
- nanoparticulate
- nanoparticulate layer
- electrolytic treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Hybrid Cells (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (13)
- 염료 태양 전지를 위한 나노미립자 전극을 생산하는 방법에 있어서,전기적으로 전도성인 기판을 마련하는 단계,상기 기판 상에 나노미립자층을 형성하는 단계,염료를 나노미립자층에 도포하는 단계 및전해질 속에서 나노미립자층을 전해 처리하는 추가적인 단계를 포함하는 나노미립자 전극의 생산 방법.
- 제1항에 있어서, 상기 전해질은 나노미립자층과 화학적으로 다른 이온을 포함하고, 상기 전해 처리는 전해질로부터 나노미립자층의 표면으로 이온의 형태로 물질이 이동하도록 하여 장벽층을 형성하게 하는 단계를 포함하며, 장벽층의 전자적인 특성은 원래의 나노미립자층의 것과 다른 것을 특징으로 하는 나노미립자 전극의 생산 방법.
- 제2항에 있어서, 상기 전해 처리 후에 장벽층과 나노미립자층의 안정적인 결합을 보장하기 위해 가열하는 것을 특징으로 하는 나노미립자 전극의 생산 방법.
- 제1항에 있어서, 상기 전해 처리는 상기 나노미립자층으로부터 전해질로 물질을 일부 제거하는 것을 포함하는 것을 특징으로 하는 나노미립자 전극의 생산 방법.
- 제1항에 있어서, 상기 전해질은 UV, 가시광선 및 적외선으로 이루어진 군으로부터 선택된 하나 이상을 흡수하는 물질의 이온을 포함하는 것을 특징으로 하는 나노미립자 전극의 생산 방법.
- 제5항에 있어서, 상기 흡수하는 물질은 염료인 것을 특징으로 하는 나노미립자 전극의 생산 방법.
- 제1항 내지 제6항 중 어느 한 항에 있어서, 상기 나노미립자층은 금속 또는 혼합 금속 산화물을 포함하는 것을 특징으로 하는 나노미립자 전극의 생산 방법.
- 제7항에 있어서, 상기 금속 산화물은 이산화 티타늄인 것을 특징으로 하는 나노미립자 전극의 생산 방법.
- 염료 태양 전지를 위한 나노미립자 전극을 생산하는 방법에 있어서,기판을 마련하는 단계,전해질로부터 나노미립자층을 전해 침착하는 단계, 및나노미립자층에 염료를 도포하는 단계를 포함하는 나노미립자 전극을 생산하는 방법.
- 제1항에 있어서, 전해 처리는 미리 정해진 양의 전하를 전해질과 나노미립자층 사이에서 이동시키는 단계를 적어도 하나 포함하는 것을 특징으로 하는 나노미립자 전극을 생산하는 방법.
- 제10항에 있어서, 전압이 부과된 한계에 도달했을 때, 제어회로가 일정 전류로부터 일정 전압 모드로 전환되어, 전류가 미리 정해진 전류 수치 아래로 떨어지거나 또는 전하의 소정량이 전해질 용액과 나노미립자 전극 사이를 통과할 때까지 일정 전압 모드를 유지하는 것과 같이, 상기 전하가 부과된 전압 한계의 일정한 전류 상태 하에서 이동하는 것을 특징으로 하는 나노미립자 전극의 생산 방법.
- 제10항에 있어서, 상기 전해 처리는 적어도 2개의 연속적인 단계(반-주기)를 포함하는데, 각각은 미리 정해진 양의 전하를 이동시키며, 첫번째 반-주기에서 전하는 전해질로부터 나노미립자층으로의 이온의 이동에 의해 이동되며, 두번째 반-주기에서는 나노미립자층으로부터 전해질로의 이동에 의해 이동되는 것을 특징으로 하는 나노미립자 전극의 생산 방법.
- 제12항에 있어서, 상기 전해 처리는 적어도 2개의 주기를 포함하고, 두번째 주기에서의 소정의 전하가 첫번째 주기에서보다 더 큰 것을 특징으로 하는 나노미립자 전극의 생산 방법.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2003906985A AU2003906985A0 (en) | 2003-12-18 | Method for electrolytic engineering of nano-particulate layers | |
AU2003906985 | 2003-12-18 | ||
PCT/AU2004/001768 WO2005060008A1 (en) | 2003-12-18 | 2004-12-17 | Method for electrolytic engineering of nano-particulate layers |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20070041665A KR20070041665A (ko) | 2007-04-19 |
KR101056514B1 true KR101056514B1 (ko) | 2011-08-12 |
Family
ID=34682620
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020067014257A Expired - Fee Related KR101056514B1 (ko) | 2003-12-18 | 2004-12-17 | 나노 미립자층의 전해 처리 방법 |
Country Status (8)
Country | Link |
---|---|
US (1) | US8002960B2 (ko) |
EP (1) | EP1697999A4 (ko) |
JP (1) | JP4909740B2 (ko) |
KR (1) | KR101056514B1 (ko) |
CN (1) | CN100477287C (ko) |
CA (1) | CA2550422A1 (ko) |
WO (1) | WO2005060008A1 (ko) |
ZA (1) | ZA200605869B (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2550422A1 (en) * | 2003-12-18 | 2005-06-30 | Dyesol Ltd | Method for electrolytic engineering of nano-particulate layers |
CN100433373C (zh) * | 2005-12-28 | 2008-11-12 | 大连海事大学 | 一种纳米TiO2-M薄膜紫外光传感器及其制备方法 |
US9011762B2 (en) | 2006-07-21 | 2015-04-21 | Valtion Teknillinen Tutkimuskeskus | Method for manufacturing conductors and semiconductors |
FI122014B (fi) | 2007-06-08 | 2011-07-15 | Teknologian Tutkimuskeskus Vtt | Menetelmä ja laite nanopartikkelijärjestelmien toiminnallistamiseksi |
DE202008001599U1 (de) | 2008-02-04 | 2008-06-26 | Knöchel, Arndt, Prof. Dr. | Elektrolytische Zusammensetzung für eine Farbstoffsolarzelle |
CA2920523A1 (en) * | 2013-08-07 | 2015-02-12 | Xagenic Inc. | Sensor growth controller |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20070041665A (ko) * | 2003-12-18 | 2007-04-19 | 다이솔 엘티디 | 나노 미립자층의 전해 처리 방법 |
KR20070075186A (ko) * | 2006-01-12 | 2007-07-18 | 삼성전자주식회사 | 분산제 기능을 갖는 염료 및 이를 채용한 태양 전지 |
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US4142947A (en) * | 1977-05-12 | 1979-03-06 | Uri Cohen | Electrodeposition of polycrystalline silicon from a molten fluoride bath and product |
US4666567A (en) * | 1981-07-31 | 1987-05-19 | The Boeing Company | Automated alternating polarity pulse electrolytic processing of electrically conductive substances |
JP4298799B2 (ja) * | 1997-05-07 | 2009-07-22 | エコール ポリテクニーク フェデラル ドゥ ローザンヌ | 金属複合体光増感剤および光起電力セル |
JPH11144773A (ja) | 1997-09-05 | 1999-05-28 | Fuji Photo Film Co Ltd | 光電変換素子および光再生型光電気化学電池 |
US6444189B1 (en) * | 1998-05-18 | 2002-09-03 | E. I. Du Pont De Nemours And Company | Process for making and using titanium oxide particles |
JP3437475B2 (ja) * | 1998-12-28 | 2003-08-18 | キヤノン株式会社 | 酸化亜鉛膜の形成方法及び該酸化亜鉛膜を用いた光起電力素子 |
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JP4461656B2 (ja) * | 2000-12-07 | 2010-05-12 | セイコーエプソン株式会社 | 光電変換素子 |
JP4461657B2 (ja) * | 2000-12-07 | 2010-05-12 | セイコーエプソン株式会社 | 光電変換素子 |
JP3702430B2 (ja) * | 2001-02-21 | 2005-10-05 | 昭和電工株式会社 | 色素増感型太陽電池用金属酸化物分散液、光活性電極及び色素増感型太陽電池 |
US20020145826A1 (en) * | 2001-04-09 | 2002-10-10 | University Of Alabama | Method for the preparation of nanometer scale particle arrays and the particle arrays prepared thereby |
JP2003030891A (ja) * | 2001-07-12 | 2003-01-31 | Sony Corp | 光ピックアップ |
EP1289028B1 (en) | 2001-09-04 | 2008-01-16 | Sony Deutschland GmbH | Photovoltaic device and method for preparing the same |
JP2003100357A (ja) * | 2001-09-20 | 2003-04-04 | Fuji Photo Film Co Ltd | 光電変換素子の作製方法、光電変換素子及び光電池 |
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CN1211866C (zh) | 2002-12-25 | 2005-07-20 | 中国科学院等离子体物理研究所 | 染料敏化纳米薄膜太阳电池用电解质溶液 |
-
2004
- 2004-12-17 CA CA002550422A patent/CA2550422A1/en not_active Abandoned
- 2004-12-17 KR KR1020067014257A patent/KR101056514B1/ko not_active Expired - Fee Related
- 2004-12-17 EP EP04802070A patent/EP1697999A4/en not_active Withdrawn
- 2004-12-17 WO PCT/AU2004/001768 patent/WO2005060008A1/en active Application Filing
- 2004-12-17 JP JP2006544173A patent/JP4909740B2/ja not_active Expired - Fee Related
- 2004-12-17 CN CNB2004800380109A patent/CN100477287C/zh not_active Expired - Fee Related
- 2004-12-17 US US10/583,121 patent/US8002960B2/en not_active Expired - Fee Related
-
2006
- 2006-07-17 ZA ZA200605869A patent/ZA200605869B/en unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20070041665A (ko) * | 2003-12-18 | 2007-04-19 | 다이솔 엘티디 | 나노 미립자층의 전해 처리 방법 |
KR20070075186A (ko) * | 2006-01-12 | 2007-07-18 | 삼성전자주식회사 | 분산제 기능을 갖는 염료 및 이를 채용한 태양 전지 |
Also Published As
Publication number | Publication date |
---|---|
US20080105362A1 (en) | 2008-05-08 |
KR20070041665A (ko) | 2007-04-19 |
US8002960B2 (en) | 2011-08-23 |
CN1898807A (zh) | 2007-01-17 |
ZA200605869B (en) | 2007-10-31 |
JP4909740B2 (ja) | 2012-04-04 |
JP2007521623A (ja) | 2007-08-02 |
CA2550422A1 (en) | 2005-06-30 |
EP1697999A4 (en) | 2010-12-01 |
EP1697999A1 (en) | 2006-09-06 |
WO2005060008A1 (en) | 2005-06-30 |
CN100477287C (zh) | 2009-04-08 |
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