KR100983952B1 - 복합구조물 - Google Patents
복합구조물 Download PDFInfo
- Publication number
- KR100983952B1 KR100983952B1 KR1020087008410A KR20087008410A KR100983952B1 KR 100983952 B1 KR100983952 B1 KR 100983952B1 KR 1020087008410 A KR1020087008410 A KR 1020087008410A KR 20087008410 A KR20087008410 A KR 20087008410A KR 100983952 B1 KR100983952 B1 KR 100983952B1
- Authority
- KR
- South Korea
- Prior art keywords
- yttrium
- yttrium oxide
- fine particles
- base material
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000000463 material Substances 0.000 claims abstract description 30
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 23
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000013078 crystal Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000002131 composite material Substances 0.000 claims abstract description 9
- 239000010419 fine particle Substances 0.000 claims description 42
- 239000002245 particle Substances 0.000 claims description 26
- 239000000443 aerosol Substances 0.000 claims description 20
- 239000000843 powder Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 6
- 239000000470 constituent Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 2
- 238000002156 mixing Methods 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 14
- 239000007789 gas Substances 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 12
- 238000002441 X-ray diffraction Methods 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- 239000002994 raw material Substances 0.000 description 9
- 239000011812 mixed powder Substances 0.000 description 8
- RUDFQVOCFDJEEF-UHFFFAOYSA-N oxygen(2-);yttrium(3+) Chemical group [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000011859 microparticle Substances 0.000 description 3
- 239000011164 primary particle Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000005169 Debye-Scherrer Methods 0.000 description 1
- -1 and preferably Chemical compound 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000007542 hardness measurement Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C24/00—Coating starting from inorganic powder
- C23C24/02—Coating starting from inorganic powder by application of pressure only
- C23C24/04—Impact or kinetic deposition of particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3293—Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
Claims (2)
- 기재표면에 산화이트륨으로 되는 구조물이 에어로졸 데포지션법에 의해 형성되고, 플라즈마에 폭로되는 장치용 부재로서 이용되는 복합구조물로서,상기 구조물에는 산화이트륨 다결정체가 90wt% 이상 포함되어 있고,추가로 상기 구조물을 구성하는 산화이트륨 다결정체의 결정구조에 입방정계(cubic)와 단사정계(monoclinic)가 혼재하도록,상기 에어로졸 데포지션법에 있어서, 상기 구조물을 형성하는 산화이트륨 미립자와, 상기 산화이트륨 미립자보다도 대입경이고, 상기 구조물의 구성재료로는 되지 않는 제막 보조입자의 혼합 분체를 포함하는 에어로졸을 생성하여 기재표면에 충돌시킴으로써,상기 제막 보조입자는 상기 산화이트륨 미립자를 파쇄 또는 변형시켜서 신생면을 형성시키고 산화이트륨으로 되는 구조물을 기재 상에 형성시키는 동시에, 상기 제막 보조입자 자신은 기재에 충돌하여 반사됨으로써 구조물의 구성재료로는 되지 않는 것을 특징으로 하는 복합구조물.
- 제1항에 있어서, 상기 복합구조물의 일부가 기재표면에 박히는 앵커부로 되어 있는 것을 특징으로 하는 복합구조물.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005298223 | 2005-10-12 | ||
JPJP-P-2005-00298223 | 2005-10-12 | ||
JP2006274848A JP5093745B2 (ja) | 2005-10-12 | 2006-10-06 | 複合構造物 |
JPJP-P-2006-00274848 | 2006-10-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20080044335A KR20080044335A (ko) | 2008-05-20 |
KR100983952B1 true KR100983952B1 (ko) | 2010-09-27 |
Family
ID=37942756
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020087008410A Expired - Fee Related KR100983952B1 (ko) | 2005-10-12 | 2006-10-10 | 복합구조물 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7897268B2 (ko) |
JP (1) | JP5093745B2 (ko) |
KR (1) | KR100983952B1 (ko) |
CN (1) | CN101283118B (ko) |
TW (1) | TWI315356B (ko) |
WO (1) | WO2007043520A1 (ko) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101453706B1 (ko) * | 2010-12-01 | 2014-10-22 | 가부시끼가이샤 도시바 | 플라즈마 에칭 장치용 부품 및 플라즈마 에칭 장치용 부품의 제조 방법 |
TW201334035A (zh) * | 2011-10-06 | 2013-08-16 | Greene Tweed Of Delaware | 抗電漿蝕刻膜,承載抗電漿蝕刻膜之物品及相關的方法 |
CN104364887B (zh) * | 2012-05-22 | 2017-09-22 | 株式会社东芝 | 等离子体处理装置用部件和等离子体处理装置用部件的制造方法 |
JP5656036B2 (ja) * | 2013-03-28 | 2015-01-21 | Toto株式会社 | 複合構造物 |
JP5888458B2 (ja) | 2014-06-26 | 2016-03-22 | Toto株式会社 | 耐プラズマ性部材及びその製造方法 |
JP2016008352A (ja) * | 2014-06-26 | 2016-01-18 | Toto株式会社 | 耐プラズマ性部材 |
JP6808168B2 (ja) * | 2015-12-24 | 2021-01-06 | Toto株式会社 | 耐プラズマ性部材 |
US11047035B2 (en) | 2018-02-23 | 2021-06-29 | Applied Materials, Inc. | Protective yttria coating for semiconductor equipment parts |
CN113260732A (zh) * | 2018-12-05 | 2021-08-13 | 京瓷株式会社 | 等离子体处理装置用构件和具备它的等离子体处理装置 |
KR102612290B1 (ko) * | 2019-04-26 | 2023-12-11 | 교세라 가부시키가이샤 | 플라스마 처리 장치용 부재 및 플라스마 처리 장치 |
KR102490570B1 (ko) * | 2022-05-23 | 2023-01-20 | 주식회사 코미코 | 희토류 금속 화합물 분말의 열처리 공정을 이용하여 저 명도의 내플라즈마성 코팅막의 제조방법 및 이에 의해 형성된 내플라즈마성 코팅막 |
TW202409316A (zh) * | 2022-08-19 | 2024-03-01 | 日商Agc股份有限公司 | 釔質保護膜及其製造方法以及構件 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1078630A (ja) | 1996-09-03 | 1998-03-24 | Nippon Hoso Kyokai <Nhk> | 光メモリ材料およびその製造方法 |
JP2005217349A (ja) | 2004-02-02 | 2005-08-11 | Toto Ltd | 耐プラズマ性を有する半導体製造装置用部材およびその作製方法 |
JP2005217351A (ja) * | 2004-02-02 | 2005-08-11 | Toto Ltd | 耐プラズマ性を有する半導体製造装置用部材およびその作製方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3265481B2 (ja) * | 1999-04-23 | 2002-03-11 | 独立行政法人産業技術総合研究所 | 脆性材料超微粒子成形体の低温成形法 |
US7153567B1 (en) * | 1999-10-12 | 2006-12-26 | Toto Ltd. | Composite structure and method and apparatus for forming the same |
JP4205912B2 (ja) | 2002-08-13 | 2009-01-07 | 時田シーブイディーシステムズ株式会社 | 透明な酸化イットリウム膜とその製造方法 |
JP4006535B2 (ja) | 2003-11-25 | 2007-11-14 | 独立行政法人産業技術総合研究所 | 半導体または液晶製造装置部材およびその製造方法 |
JP2005217350A (ja) | 2004-02-02 | 2005-08-11 | Toto Ltd | 耐プラズマ性を有する半導体製造装置用部材およびその作製方法 |
TW200724506A (en) * | 2005-10-07 | 2007-07-01 | Ohara Kk | Inorganic composition |
JP2007109827A (ja) * | 2005-10-12 | 2007-04-26 | Toto Ltd | 静電チャック |
JP2007109828A (ja) * | 2005-10-12 | 2007-04-26 | Toto Ltd | 耐プラズマ性部材 |
-
2006
- 2006-10-06 JP JP2006274848A patent/JP5093745B2/ja not_active Expired - Fee Related
- 2006-10-10 US US12/083,065 patent/US7897268B2/en not_active Expired - Fee Related
- 2006-10-10 WO PCT/JP2006/320203 patent/WO2007043520A1/ja active Application Filing
- 2006-10-10 CN CN2006800375538A patent/CN101283118B/zh not_active Expired - Fee Related
- 2006-10-10 KR KR1020087008410A patent/KR100983952B1/ko not_active Expired - Fee Related
- 2006-10-12 TW TW095137582A patent/TWI315356B/zh not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1078630A (ja) | 1996-09-03 | 1998-03-24 | Nippon Hoso Kyokai <Nhk> | 光メモリ材料およびその製造方法 |
JP2005217349A (ja) | 2004-02-02 | 2005-08-11 | Toto Ltd | 耐プラズマ性を有する半導体製造装置用部材およびその作製方法 |
JP2005217351A (ja) * | 2004-02-02 | 2005-08-11 | Toto Ltd | 耐プラズマ性を有する半導体製造装置用部材およびその作製方法 |
Also Published As
Publication number | Publication date |
---|---|
TW200734485A (en) | 2007-09-16 |
US20090233126A1 (en) | 2009-09-17 |
JP2007131943A (ja) | 2007-05-31 |
TWI315356B (en) | 2009-10-01 |
CN101283118B (zh) | 2011-04-20 |
US7897268B2 (en) | 2011-03-01 |
JP5093745B2 (ja) | 2012-12-12 |
WO2007043520A1 (ja) | 2007-04-19 |
CN101283118A (zh) | 2008-10-08 |
KR20080044335A (ko) | 2008-05-20 |
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