KR100775574B1 - 고효율 발광 다이오드 패키지 - Google Patents
고효율 발광 다이오드 패키지 Download PDFInfo
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- KR100775574B1 KR100775574B1 KR20060035782A KR20060035782A KR100775574B1 KR 100775574 B1 KR100775574 B1 KR 100775574B1 KR 20060035782 A KR20060035782 A KR 20060035782A KR 20060035782 A KR20060035782 A KR 20060035782A KR 100775574 B1 KR100775574 B1 KR 100775574B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (12)
- 전기적 신호에 상응하여 소정의 광을 발하는 발광 다이오드;상기 발광 다이오드가 전기적으로 결합되도록 실장되며, 양극 리드프레임과 음극 리드프레임을 가지는 기판;상기 기판 상에 실장되며 상기 발광 다이오드와 병렬로 연결되어 정전압을 유지하는 정전압 다이오드; 및상기 발광 다이오드와 상기 정전압 다이오드 사이에 위치하며 상기 발광 다이오드에서 출사되는 광이 상기 정전압 다이오드에 직접 조사되어 반사 또는 흡수되지 않도록 하고, 알루미늄, 은 및 플라스틱 중 어느 하나로 형성되는 차광 댐을 포함하는 것을 특징으로 하는 고효율 발광 다이오드 패키지.
- 제1항에 있어서,상기 발광 다이오드 패키지는 측면형 발광 다이오드 패키지(Side View LED)인 것을 특징으로 하는 고효율 발광 다이오드 패키지.
- 제1항에 있어서,상기 정전압 다이오드는 제너 다이오드 또는 애벌런시 다이오드인 것을 특징으로 하는 고효율 발광 다이오드 패키지.
- 삭제
- 제1항에 있어서,상기 차광 댐의 단면은 사각형 또는 삼각형인 것을 특징으로 하는 고효율 발광 다이오드 패키지.
- 제1항에 있어서,상기 차광 댐이 상기 발광 다이오드를 바라보는 측면은 반사물질로 도포된 것을 특징으로 하는 고효율 발광 다이오드 패키지.
- 제6항에 있어서,상기 반사물질은 알루미늄, 은 및 플라스틱 중 어느 하나로 형성되는 것을 특징으로 하는 고효율 발광 다이오드 패키지.
- 제1항에 있어서,상기 차광 댐이 상기 발광 다이오드를 바라보는 측면은 상기 기판과 소정 각도로 경사진 것을 특징으로 하는 고효율 발광 다이오드 패키지.
- 제1항 또는 제8항에 있어서,상기 기판 상에 형성되며 상기 발광 다이오드, 정전압 다이오드 및 차광 댐을 둘러싸며 상기 발광 다이오드에서 출사된 광을 외부로 반사하는 반사부를 더 포함하는 것을 특징으로 하는 고효율 발광 다이오드 패키지.
- 제9항에 있어서,상기 반사부의 측면에 형성된 반사면은 상기 차광 댐에 형성된 측면의 각도에 대응하여 상기 기판과 소정의 각도를 형성하는 것을 특징으로 하는 고효율 발광 다이오드 패키지.
- 제9항에 있어서,상기 차광 댐은 상기 반사부를 형성하는 물질과 동일한 물질로 형성되는 것을 특징으로 하는 고효율 발광 다이오드 패키지.
- 제11항에 있어서,상기 차광 댐은 폴리 파라바닉산 레진(poly parabanic acid resin) 또는 나일론으로 형성되는 것을 특징으로 하는 고효율 발광 다이오드 패키지.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20060035782A KR100775574B1 (ko) | 2006-04-20 | 2006-04-20 | 고효율 발광 다이오드 패키지 |
TW096110903A TW200742138A (en) | 2006-04-20 | 2007-03-28 | High efficiency LED package |
JP2007104510A JP2007294953A (ja) | 2006-04-20 | 2007-04-12 | 高効率発光ダイオードパッケージ |
US11/788,132 US20070246729A1 (en) | 2006-04-20 | 2007-04-18 | High efficiency LED package |
EP20070251658 EP1848038A2 (en) | 2006-04-20 | 2007-04-20 | High efficiency led package |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20060035782A KR100775574B1 (ko) | 2006-04-20 | 2006-04-20 | 고효율 발광 다이오드 패키지 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20070103883A KR20070103883A (ko) | 2007-10-25 |
KR100775574B1 true KR100775574B1 (ko) | 2007-11-15 |
Family
ID=38134091
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR20060035782A Expired - Fee Related KR100775574B1 (ko) | 2006-04-20 | 2006-04-20 | 고효율 발광 다이오드 패키지 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20070246729A1 (ko) |
EP (1) | EP1848038A2 (ko) |
JP (1) | JP2007294953A (ko) |
KR (1) | KR100775574B1 (ko) |
TW (1) | TW200742138A (ko) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USD606948S1 (en) * | 2006-09-28 | 2009-12-29 | Cree, Inc. | Led |
USD595673S1 (en) | 2007-01-19 | 2009-07-07 | Cree, Inc. | Light emitting diode |
JP2008300573A (ja) * | 2007-05-30 | 2008-12-11 | Toshiba Corp | 発光装置 |
KR100969142B1 (ko) * | 2008-01-25 | 2010-07-08 | 알티전자 주식회사 | 측면 발광 다이오드 패키지 |
KR100981214B1 (ko) * | 2008-01-28 | 2010-09-10 | 알티전자 주식회사 | 발광다이오드 패키지 |
KR100969144B1 (ko) | 2008-01-28 | 2010-07-08 | 알티전자 주식회사 | 발광 다이오드 패키지 |
EP2238384B1 (en) | 2008-01-30 | 2016-01-20 | Koninklijke Philips N.V. | Semiconductor package with incorporated light or temperature sensors and time multiplexing |
KR100986212B1 (ko) * | 2008-03-10 | 2010-10-07 | 주식회사 이츠웰 | 사이드 뷰 엘이디 램프용 금속기판과 사이드 뷰형 엘이디패키지 및 그 제조방법 |
DE102008016534A1 (de) * | 2008-03-31 | 2009-10-01 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauelements |
KR100899555B1 (ko) * | 2008-06-12 | 2009-05-27 | 알티전자 주식회사 | 발광 다이오드 패키지 |
KR20100003320A (ko) * | 2008-06-24 | 2010-01-08 | 엘지이노텍 주식회사 | 발광 다이오드 패키지 |
USD608307S1 (en) | 2008-08-28 | 2010-01-19 | Cree, Inc. | Light emitting diode |
JP5217800B2 (ja) | 2008-09-03 | 2013-06-19 | 日亜化学工業株式会社 | 発光装置、樹脂パッケージ、樹脂成形体並びにこれらの製造方法 |
TWI380433B (en) * | 2009-02-25 | 2012-12-21 | Everlight Electronics Co Ltd | Light emitting diode package |
TWI411142B (zh) | 2009-06-23 | 2013-10-01 | Delta Electronics Inc | 發光裝置及其封裝方法 |
KR101282829B1 (ko) * | 2010-02-17 | 2013-07-26 | 일진엘이디(주) | 발광 다이오드 패키지 |
KR101039994B1 (ko) * | 2010-05-24 | 2011-06-09 | 엘지이노텍 주식회사 | 발광소자 및 이를 구비한 라이트 유닛 |
KR101852388B1 (ko) | 2011-04-28 | 2018-04-26 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
JP6205894B2 (ja) * | 2012-07-04 | 2017-10-04 | 日亜化学工業株式会社 | 発光装置用パッケージ成形体およびそれを用いた発光装置 |
US20140167083A1 (en) * | 2012-12-19 | 2014-06-19 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Led package with integrated reflective shield on zener diode |
CN104112739A (zh) * | 2013-04-16 | 2014-10-22 | 展晶科技(深圳)有限公司 | 发光二极管 |
CN104752369B (zh) | 2013-12-27 | 2018-02-16 | 展晶科技(深圳)有限公司 | 光电元件模组 |
CN107946441A (zh) * | 2016-10-12 | 2018-04-20 | 亿光电子工业股份有限公司 | 发光装置及发光二极管封装结构 |
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JP3472450B2 (ja) * | 1997-09-04 | 2003-12-02 | シャープ株式会社 | 発光装置 |
JP2000124506A (ja) * | 1998-10-15 | 2000-04-28 | Rohm Co Ltd | 半導体発光素子 |
JP3729012B2 (ja) * | 2000-02-24 | 2005-12-21 | 松下電工株式会社 | Ledモジュール |
JP2002124703A (ja) * | 2000-08-09 | 2002-04-26 | Rohm Co Ltd | チップ型発光装置 |
JP4761494B2 (ja) * | 2001-08-24 | 2011-08-31 | シチズン電子株式会社 | 双方向光伝送デバイス |
JP2005197318A (ja) * | 2003-12-26 | 2005-07-21 | Stanley Electric Co Ltd | 横方向発光型面実装led及びその製造方法 |
KR100632002B1 (ko) * | 2005-08-02 | 2006-10-09 | 삼성전기주식회사 | 보호 소자를 포함하는 측면형 발광 다이오드 |
-
2006
- 2006-04-20 KR KR20060035782A patent/KR100775574B1/ko not_active Expired - Fee Related
-
2007
- 2007-03-28 TW TW096110903A patent/TW200742138A/zh unknown
- 2007-04-12 JP JP2007104510A patent/JP2007294953A/ja active Pending
- 2007-04-18 US US11/788,132 patent/US20070246729A1/en not_active Abandoned
- 2007-04-20 EP EP20070251658 patent/EP1848038A2/en not_active Withdrawn
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1154799A (ja) | 1997-07-30 | 1999-02-26 | Rohm Co Ltd | 半導体発光素子 |
KR20040040396A (ko) * | 2003-11-19 | 2004-05-12 | 럭스피아 주식회사 | 측면형 발광 다이오드 패키지 |
KR20060002328A (ko) * | 2004-07-01 | 2006-01-09 | 서울반도체 주식회사 | 방열효율이 향상된 고출력 발광다이오드 패키지 |
Also Published As
Publication number | Publication date |
---|---|
TW200742138A (en) | 2007-11-01 |
JP2007294953A (ja) | 2007-11-08 |
US20070246729A1 (en) | 2007-10-25 |
KR20070103883A (ko) | 2007-10-25 |
EP1848038A2 (en) | 2007-10-24 |
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