[go: up one dir, main page]

KR100702297B1 - Manufacturing method of white LED - Google Patents

Manufacturing method of white LED Download PDF

Info

Publication number
KR100702297B1
KR100702297B1 KR1020030003705A KR20030003705A KR100702297B1 KR 100702297 B1 KR100702297 B1 KR 100702297B1 KR 1020030003705 A KR1020030003705 A KR 1020030003705A KR 20030003705 A KR20030003705 A KR 20030003705A KR 100702297 B1 KR100702297 B1 KR 100702297B1
Authority
KR
South Korea
Prior art keywords
manufacturing
light emitting
white led
blue
white
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020030003705A
Other languages
Korean (ko)
Other versions
KR20030063211A (en
Inventor
첸흐싱
Original Assignee
솔리드라이트 코퍼레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 솔리드라이트 코퍼레이션 filed Critical 솔리드라이트 코퍼레이션
Publication of KR20030063211A publication Critical patent/KR20030063211A/en
Application granted granted Critical
Publication of KR100702297B1 publication Critical patent/KR100702297B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8511Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512Wavelength conversion materials
    • H10H20/8513Wavelength conversion materials having two or more wavelength conversion materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0361Manufacture or treatment of packages of wavelength conversion means
    • H10W72/01515
    • H10W72/075
    • H10W74/00

Landscapes

  • Led Device Packages (AREA)
  • Luminescent Compositions (AREA)

Abstract

본 발명은 백색 LED의 제조 방법에 관한 것으로, 특히 패키징 기판을 이용한 자색광 발광 LED 칩에 적색, 청색 및 녹색의 삼색 혼합의 형광물질을 도포한 후 자색광 발광 LED 칩이 자색광을 발광하는 점을 이용해 상기 형광물질의 표면에 빛을 투과시켜 적색, 청색 및 녹색의 삼파장이 혼합된 백색광을 만드는 백색 LED의 제조 방법에 관한 것이다.The present invention relates to a method of manufacturing a white LED, and in particular, after applying a fluorescent material of a mixture of red, blue, and green to a purple light emitting LED chip using a packaging substrate, the purple light emitting LED chip emits purple light. The present invention relates to a method of manufacturing a white LED that transmits light to the surface of the fluorescent material to produce white light in which three wavelengths of red, blue, and green are mixed.

Description

백색 LED의 제조 방법{METHOD FOR MANUFACTURING A WHITE LED} Manufacturing method of white LED {METHOD FOR MANUFACTURING A WHITE LED}             

도 1은 종래의 방법에 따라 제조된 백색 LED의 패키징 리드 프레임을 나타내는 도면;1 shows a packaging lead frame of a white LED manufactured according to a conventional method;

도 2는 본 발명에 따라 제조된 백색 LED의 리드 프레임을 나타내는 도면;2 shows a lead frame of a white LED made according to the invention;

도 3은 본 발명에 따라 제조된 다른 형태의 백색 LED의 리드 프레임을 나타내는 도면;3 shows a lead frame of another type of white LED made in accordance with the present invention;

도 4는 본 발명에 따른 백색 LED의 몰딩 제작 구조도; 및4 is a structural diagram of a molding of a white LED according to the present invention; And

도 5는 본 발명에 따른 백색 LED의 스펙트럼을 나타내는 도면이다.5 is a view showing a spectrum of a white LED according to the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : 자색광 발광칩 2 : 삼원색 형광 물질1: violet light emitting chip 2: three primary fluorescent material

3, 9 : 패키징 리드 프레임 4 : 와이어 리드3, 9: packaging lead frame 4: wire lead

5 : 리드 프레임 전극 10 : 기판 전극
5: lead frame electrode 10: substrate electrode

본 발명은 백색 LED(Light Emitting Diode:발광 다이오드)의 제조 방법에 관한 것으로, 특히 패키징 기판을 이용한 자색광(violet light) 발광 LED 칩에 적색, 청색 및 녹색의 삼색 혼합의 형광물질을 도포한 후 자색광 발광 LED 칩이 자색광을 발광하는 점을 이용해 상기 형광물질의 표면에 빛을 투과시켜 적색, 청색 및 녹색의 삼파장이 혼합된 백색광을 만드는 백색 LED의 제조 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a white light emitting diode (LED), and in particular, after applying a fluorescent material of a mixture of red, blue, and green colors to a violet light emitting LED chip using a packaging substrate, The present invention relates to a method of manufacturing a white LED that transmits light to a surface of the fluorescent material by using a purple light emitting LED chip to emit purple light, thereby producing white light in which three wavelengths of red, blue, and green are mixed.

백색 LED 제조 방법의 종래예로는 2가지 방법이 있다.There are two conventional examples of the white LED manufacturing method.

첫번째 방법으로는 일본 니치아(Nichia)의 대만 특허 등록번호 제383508호에서 기술되어 있는 바와 같이 청색광 발광칩에 황색 형광물질(YAG)을 도포하는 방법이 있다.The first method is a method of applying a yellow fluorescent substance (YAG) to a blue light emitting chip as described in Nichia, Taiwan Patent No. 383508.

그러나, 상기 방법으로 만들어지는 백색광은 청색과 황색의 쌍파장(two-wavelengh)으로 이루어져 지시용으로는 적합하나, 조명 용도 및 LCD 칼라 배경 광원 용도로는 적합하지 못했다. 또한 황색 형광물질의 양을 조절하는 어려움으로 인해 자주 빛의 색깔이 청색으로 치우치거나 황색으로 치우치는 문제점이 발생했다.However, the white light produced by the above method is composed of blue and yellow two-wavelenghs, which is suitable for indication, but not for lighting use and LCD color background light source. In addition, due to the difficulty of controlling the amount of the yellow fluorescent substance has a problem that the color of the light is biased to blue or yellow.

두번째 방법으로는 본 발명자의 대만 특허 등록번호 제385063호에서 기술되어 있는 바와 같이 자외선 발광칩에 적색, 청색 및 녹색의 혼합 형광물질을 도포한 후 빛을 투과시켜 백색광으로 보이게 하는 방법이 있다. As a second method, there is a method of applying red, blue, and green mixed fluorescent materials to an ultraviolet light emitting chip as described in Taiwan Patent Registration No. 385063 of the present inventors, and then transmitting light to make white light appear.

상기 방법은 자외선을 삼원색 형광물질에 투과시켜 삼파장 백색광을 만들어내는 가장 이상적인 방법이다. 그러나, 이전까지는 발광 효율이 높은 자외선 LED 발광칩이 나타나지 않아 제조상에 있어 많은 문제점이 있었다. 현재 자외선 LED를 이용하는 일본의 니치아의 경우 삼파장의 길이가 371nm이고 파워 역시 2~3mW이다. 마찬가지로 일본의 도요다 고세이(Toyoda Gosei)의 제품 역시 380nm의 삼파장 길이에 파워는 약 2~3mW이다. 이와 같이 고효율의 자외선 LED 발광칩 제조가 어려운 이유는 재료의 특성과 제조 공정때문이다.The method is the most ideal method for transmitting three wavelengths of white light by transmitting ultraviolet rays through the three primary fluorescent materials. However, there have been many problems in manufacturing until the ultraviolet LED light emitting chip with high luminous efficiency does not appear. Nichia in Japan, which currently uses ultraviolet LEDs, has a wavelength of 371nm and power of 2-3mW. Similarly, Toyota Gosei's products in Japan have a 380nm three-wavelength length and power of about 2-3mW. The reason why it is difficult to manufacture high-efficiency ultraviolet LED light emitting chips is due to the material properties and manufacturing process.

또한, 현재까지는 자외선을 피복할 수 있는 투명한 수지가 없어 대부분 유기 수지가 사용되고 있고, 이러한 유기수지는 자외선을 흡수 및 열성화시켜 LED의 수명과 품질을 떨어뜨렸다. In addition, until now there is no transparent resin that can cover ultraviolet rays, and most organic resins are used. Such organic resins absorb and heat ultraviolet rays, thereby reducing the lifespan and quality of LEDs.

본 발명은 종래형의 백색 LED의 결점 연구를 통해 보다 나은 백색 LED의 제조 기술을 제공하는 것으로, 자색광(파장 390~410nm)과 형광물질을 이용하여 삼파장 백색 LED를 만들어내는 제조 방법을 제공하는 것이다.The present invention provides a better white LED manufacturing technology through the study of defects of the conventional white LED, and provides a manufacturing method for producing a three-wavelength white LED using a violet light (wavelength 390 ~ 410nm) and a fluorescent material will be.

본 발명의 백색 LED 제조 기술은 파장 390~410nm 사이의 자색광을 형광물질에 투과시켜 백색광을 제조하는 기술로서, 상기한 청색 발광칩에 황색 형광물질(YAG)을 추가하는 기술이나 자외선을 삼색 형광물질에 투과시켜 삼파장의 백색광을 만드는 기술과는 다른 기술이다.The white LED manufacturing technology of the present invention is a technology for producing white light by transmitting a violet light having a wavelength of 390 ~ 410nm through a fluorescent material, a technique of adding a yellow fluorescent material (YAG) to the blue light emitting chip or tri-fluorescence ultraviolet light It is different from the technology of making white light of three wavelengths through the material.

본 발명에서 자색광을 이용한 이유는 미국의 크리 코퍼레이션(Cree Corporation)이 390~395nm 사이의 파장을 이용해서 파워 20mW 이상을 만들어 내는 고효율 LED 칩을 만들어 냈기 때문인데, 이는 현재의 청색이나 자외선보다 높은 효율을 가지고 있다. 또한 390~410nm 범위의 자색광에 의해서 형광물질(적색, 청색 및 녹색)이 고르게 발광될 수 있음을 본인의 여러 차례의 실험으로 밝혀내었다.The reason for using purple light in the present invention is because Cree Corporation of the United States has made a highly efficient LED chip that produces more than 20mW of power using a wavelength between 390 and 395nm, which is higher than the current blue or ultraviolet ray. Has efficiency. In addition, his experiments revealed that fluorescent light (red, blue, and green) can be emitted evenly by violet light in the range of 390-410 nm.

그 중:among them:

적색의 형광 물질은 Y2O2S:Eu,Gd이고The red fluorescent substance is Y 2 O 2 S: Eu, Gd

녹색의 형광 물질은 ZnS:Cu,Al 또는 Ca2MgSi2O7:Cl이고,Green fluorescent material is ZnS: Cu, Al or Ca 2 MgSi 2 O 7 : Cl,

청색의 형광 물질은 BaMgAl10O17 또는 (Sr,Ca,BaMg)10(PO4) 6Cl2:Eu이다.The blue fluorescent substance is BaMgAl 10 O 17 or (Sr, Ca, BaMg) 10 (PO 4 ) 6 Cl 2 : Eu.

적색, 청색 및 녹색의 적당한 배합을 통해 백색광이나 여러 가지 빛의 색깔 온도나 다양한 빛의 색깔을 만들어 낼 수 있다.With the right mix of red, blue and green, you can produce white light, different color temperatures or different colors of light.

도 2를 보면, 먼저 적당한 비율로 배합시킨 적색, 청색 및 녹색의 삼원색 형광물질(2)이 자색광에서 충분한 백색광을 만들어낸다. 또한, 이 백색광은 고객의 다른 수요에 대처하기 위해 3000~8000K의 사이에서 조정될 수 있으며 적색, 청색 및 녹색의 삼원색의 형광물질(2) 역시 그 비율에 적용시켜 조정될 수 있다.Referring to Fig. 2, first, the red, blue, and green trichromatic phosphors 2 blended in an appropriate ratio produce sufficient white light from purple light. In addition, this white light can be adjusted between 3000 and 8000K to meet the different demands of the customer, and the red, blue and green three primary colors of fluorescent material 2 can also be adjusted by adjusting the ratio.

자색광 발광칩(1)을 패키징 리드 프레임(frame)(3)이나 패키징 리드 프레임(9)에 고정시키고, 와이어 리드(4)를 LED 발광칩, 리드 프레임 전극(5)(또는 기판 전극(10))과 패키징 리드 프레임(또는 패키징 리드 프레임(9))에 각각 연결 시킨다. 다음으로, 적절히 혼합된 삼원색 형광물질(2)을 직접 또는 간접으로(도 3, 도 4참조) 자외선 발광 LED 칩(1)의 표면에 도포하는데 이를 빛에 투과시키면 삼파장의 백색광이 만들어지게 된다(도 5참조).The violet light emitting chip 1 is fixed to the packaging lead frame 3 or the packaging lead frame 9, and the wire lead 4 is fixed to the LED light emitting chip, the lead frame electrode 5 (or the substrate electrode 10). ) And the packaging lead frame (or packaging lead frame 9), respectively. Next, an appropriately mixed trichromatic fluorescent substance 2 is applied directly or indirectly (see FIGS. 3 and 4) to the surface of the ultraviolet light emitting LED chip 1, and when it is transmitted through light, three wavelengths of white light are produced ( See FIG. 5).

본 발명의 삼원색 형광 물질(2)의 구성은 다음과 같다.The configuration of the trichromatic fluorescent substance 2 of the present invention is as follows.

적색의 형광 물질은 Y2O2S:Eu,Gd이고,The red fluorescent substance is Y 2 O 2 S: Eu, Gd,

녹색의 형광 물질은 ZnS:Cu,Al 또는 Ca2MgSi2O7:Cl이고,Green fluorescent material is ZnS: Cu, Al or Ca 2 MgSi 2 O 7 : Cl,

청색의 형광 물질은 BaMgAl10O17 또는 (Sr,Ca,BaMg)10(PO4) 6Cl2:Eu이다.The blue fluorescent substance is BaMgAl 10 O 17 or (Sr, Ca, BaMg) 10 (PO 4 ) 6 Cl 2 : Eu.

상술한 형광 물질이외에 기타 형광물질을 이용할 수 있다. 따라서, 본 발명은 상술한 형광 물질만을 한정하는 것에 그치지 않고, 기타 자색광 파장(390~410nm) 범위를 발생시키는 형광물질 역시 포함한다.In addition to the above-described fluorescent substance, other fluorescent substances may be used. Therefore, the present invention is not only limited to the above-described fluorescent material, but also includes other fluorescent materials that generate other violet light wavelengths (390 to 410 nm).

기존의 형광물질의 연구는 파장이 254nm 또는 365nm 범위내의 것에 한정해서 행해졌다. 반면에, 본 발명과 같이 자색광을 이용한 백색 발광 연구는 극소수였는데, 이는 고효율의 자색광 발광 LED 칩이 최근 1년에서야 비로소 개발된데 따른 것이다. 본 발명은 고효율의 자색광 LED 발광칩을 이용해서 형광물질을 백색광으로 만들어 내는 기술에 관한 것으로, 본 발명에 따르면 백색광을 양호하게 발생시킬 수 있고 또 삼파장으로도 발생시킬 수 있다.Existing fluorescent materials have been studied only in the wavelength range of 254nm or 365nm. On the other hand, research on white light emission using purple light as in the present invention has been very few, which is due to the development of high efficiency purple light emitting LED chips only in recent years. The present invention relates to a technique for producing a fluorescent material into white light by using a high-efficiency purple light LED light emitting chip, according to the present invention can generate white light well and can also be generated in three wavelengths.

상기한 바와 같이, 본 발명은 패키징 기판 또는 리드 프레임으로 구성되는 자색광 발광 LED 칩에 적색, 청색 및 녹색의 삼원색을 혼합한 형광물질을 공지된 방법으로 직접 또는 간접적으로 코팅하는 방식으로 도포한 후 자색광 발광 LED 칩을 패키징 기판이나 리드 프레임상에 고정시킨 다음 전극에 연결시키는 것을 특징으로 하는 백색 LED의 제조 방법을 제공하고, 그리고 상기 자색광 발광 LED 칩이 발생시키는 자색광의 파장 범위가 390nm~410nm 사이인 것을 특징으로 하는 백색 LED의 제조 방법, 상기 패키징 기판이 인쇄회로기판(Printed Circuit Board : PCB), 세라믹 기판, 실리콘 기판, 또는 금속 기판으로 할 수 있는 것을 특징으로 하는 백색 LED의 제조 방법, 및 상기 적색의 형광 물질은 Y2O2S:Eu,Gd이고, 녹색의 형광 물질은 ZnS:Cu,Al 또는 Ca2MgSi2O7:Cl이고, 청색의 형광 물질은 BaMgAl10O17 또는 (Sr,Ca,BaMg)10(PO4)6Cl2:Eu인 것을 특징으로 하는 백색 LED의 제조 방법을 제공한다.As described above, the present invention is applied to a violet light emitting LED chip consisting of a packaging substrate or a lead frame by directly or indirectly coating a fluorescent material mixed with three primary colors of red, blue and green by a known method. The method provides a method of manufacturing a white LED, the method comprising fixing the violet light emitting LED chip on a packaging substrate or a lead frame and connecting the electrode to an electrode, and the wavelength range of the violet light generated by the violet light emitting LED chip is from 390 nm to A method of manufacturing a white LED, characterized in that between 410nm, the packaging substrate can be a printed circuit board (PCB), a ceramic substrate, a silicon substrate, or a metal substrate manufacturing method of a white LED, characterized in that And the red fluorescent material is Y 2 O 2 S: Eu, Gd, and the green fluorescent material is ZnS: Cu, Al or Ca 2 MgSi 2 O 7 : Cl, blue The fluorescent material provides BaMgAl 10 O 17 or (Sr, Ca, BaMg) 10 (PO 4 ) 6 Cl 2 : Eu.

이상과 같이, 본원 발명은 고효율의 자색광 LED 발광칩을 이용하여 형광물질을 백색광으로 만들어 냄으로서, 단일 칩을 이용한 백색 LED 제조 기술중 발광 효율이 가장 높은 삼파장의 백색광을 제조할 수 있는 효과를 가진다.As described above, the present invention generates the white light having the highest luminous efficiency among the white LED manufacturing technology using a single chip, by producing a fluorescent material as white light using a high efficiency purple light LED light emitting chip. Have

Claims (4)

패키징 기판 또는 리드 프레임으로 구성되는 자색광 발광 LED 칩에 적색, 청색 및 녹색의 삼원색을 혼합한 형광 물질을 코팅한 후 자색광 발광 LED 칩을 패키징 기판이나 리드 프레임에 고정시킨 다음 전극에 연결시키는 것을 특징으로 하는 백색 LED의 제조 방법.Coating a fluorescent material containing a mixture of three primary colors of red, blue, and green on a purple light emitting LED chip consisting of a packaging substrate or a lead frame, and then fixing the purple light emitting LED chip to the packaging substrate or lead frame, and then connecting the electrode to the electrode. The manufacturing method of the white LED characterized by the above-mentioned. 제 1 항에 있어서,The method of claim 1, 자색광 발광 LED 칩이 발생시키는 자외선 빛의 파장 범위는 390nm~410nm인 것을 특징으로 하는 백색 LED의 제조 방법.The wavelength range of the ultraviolet light generated by the violet light emitting LED chip is 390nm ~ 410nm manufacturing method of the white LED. 제 1 항에 있어서,The method of claim 1, 패키징 기판은 인쇄회로기판(PCB), 세라믹 기판, 실리콘 기판, 또는 금속 기판인 것을 특징으로 하는 백색 LED의 제조 방법.The packaging substrate is a printed circuit board (PCB), a ceramic substrate, a silicon substrate, or a metal substrate manufacturing method of a white LED, characterized in that. 제 1 항에 있어서,The method of claim 1, 적색의 형광 물질은 Y2O2S:Eu,Gd이고, 녹색의 형광 물질은 ZnS:Cu,Al 또는 Ca2MgSi2O7:Cl이고, 청색의 형광 물질은 BaMgAl10O17 또는 (Sr,Ca,BaMg)10(PO4)6Cl2:Eu인 것을 특징으로 하는 백색 LED의 제조 방법.The red phosphor is Y 2 O 2 S: Eu, Gd, the green phosphor is ZnS: Cu, Al or Ca 2 MgSi 2 O 7 : Cl, and the blue phosphor is BaMgAl 10 O 17 or (Sr, Ca, BaMg) 10 (PO 4 ) 6 Cl 2 : Eu manufacturing method of a white LED.
KR1020030003705A 2002-01-21 2003-01-20 Manufacturing method of white LED Expired - Fee Related KR100702297B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CNB021020760A CN1266776C (en) 2002-01-21 2002-01-21 Manufacturing method of white light emitting diode
CN02102076.0 2002-01-21

Publications (2)

Publication Number Publication Date
KR20030063211A KR20030063211A (en) 2003-07-28
KR100702297B1 true KR100702297B1 (en) 2007-03-30

Family

ID=4739651

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020030003705A Expired - Fee Related KR100702297B1 (en) 2002-01-21 2003-01-20 Manufacturing method of white LED

Country Status (4)

Country Link
JP (1) JP2003224306A (en)
KR (1) KR100702297B1 (en)
CN (1) CN1266776C (en)
DE (1) DE10301169A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170017315A (en) 2015-08-06 2017-02-15 정수동 LED light source for implementing a high S/P ratio
KR20170003082U (en) 2017-08-21 2017-09-01 정수동 Smt led light source with improved s/p ratio

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7800121B2 (en) 2002-08-30 2010-09-21 Lumination Llc Light emitting diode component
US10340424B2 (en) 2002-08-30 2019-07-02 GE Lighting Solutions, LLC Light emitting diode component
US10309587B2 (en) 2002-08-30 2019-06-04 GE Lighting Solutions, LLC Light emitting diode component
US7224000B2 (en) 2002-08-30 2007-05-29 Lumination, Llc Light emitting diode component
CN100383988C (en) * 2003-08-20 2008-04-23 刘行仁 White light emitting diode and phosphor for light conversion thereof
DE10345516B4 (en) * 2003-09-30 2012-03-01 Osram Opto Semiconductors Gmbh Electromagnetic radiation emitting semiconductor device and method for its production
JP2005209795A (en) * 2004-01-21 2005-08-04 Koito Mfg Co Ltd Light emitting module and lamp
CN100341163C (en) * 2004-03-29 2007-10-03 宏齐科技股份有限公司 white light emitting diode unit
KR100655894B1 (en) 2004-05-06 2006-12-08 서울옵토디바이스주식회사 Wavelength conversion light emitting device with excellent color temperature and color rendering
KR100658700B1 (en) 2004-05-13 2006-12-15 서울옵토디바이스주식회사 Light emitting device combining RGB light emitting element and phosphor
KR100599717B1 (en) * 2004-05-31 2006-07-13 삼성에스디아이 주식회사 Plasma display panel
US8318044B2 (en) 2004-06-10 2012-11-27 Seoul Semiconductor Co., Ltd. Light emitting device
KR100665299B1 (en) 2004-06-10 2007-01-04 서울반도체 주식회사 Emitting material
KR100665298B1 (en) 2004-06-10 2007-01-04 서울반도체 주식회사 Light emitting device
KR101053325B1 (en) * 2005-03-19 2011-08-01 엘지전자 주식회사 Dust collection unit of vacuum cleaner combined with water cleaning
CN1333472C (en) * 2005-04-04 2007-08-22 江苏奥雷光电有限公司 Large power luminous diode fluorescent powder curing technology
CN1848463A (en) * 2005-04-15 2006-10-18 南京汉德森科技股份有限公司 LED white light source based on metal circuit board
JP5057692B2 (en) 2005-04-27 2012-10-24 サムソン エルイーディー カンパニーリミテッド. Backlight unit using light emitting diode
KR100780186B1 (en) * 2005-04-27 2007-11-27 삼성전기주식회사 Backlight unit for LCD using light emitting diode
KR100682876B1 (en) 2005-07-06 2007-02-15 삼성전기주식회사 Silicophosphate-based phosphors and LEDs including the same
CN100420728C (en) * 2005-08-22 2008-09-24 中国科学院长春光学精密机械与物理研究所 Method for converting light emitted by rare-earth three-primary-color luminescent material into white light by using blue-violet light diode
CN100426541C (en) * 2005-09-06 2008-10-15 亿镫光电科技股份有限公司 Light emitting device for generating visible light
CN100438026C (en) * 2005-09-16 2008-11-26 鸿富锦精密工业(深圳)有限公司 White light emitting diode and manufacturing method thereof
KR101258397B1 (en) 2005-11-11 2013-04-30 서울반도체 주식회사 Copper-Alkaline-Earth-Silicate mixed crystal phosphors
KR101055772B1 (en) 2005-12-15 2011-08-11 서울반도체 주식회사 Light emitting device
JP2007273562A (en) 2006-03-30 2007-10-18 Toshiba Corp Semiconductor light emitting device
KR100875443B1 (en) 2006-03-31 2008-12-23 서울반도체 주식회사 Light emitting device
CN100479209C (en) * 2006-08-25 2009-04-15 财团法人工业技术研究院 Light emitting element
KR101258227B1 (en) 2006-08-29 2013-04-25 서울반도체 주식회사 Light emitting device
US7842960B2 (en) 2006-09-06 2010-11-30 Lumination Llc Light emitting packages and methods of making same
KR100851605B1 (en) * 2006-09-06 2008-08-12 목산전자주식회사 Manufacturing method of white LED
CN101179102B (en) * 2006-11-10 2010-12-01 深圳市光伏能源科技有限公司 A kind of LED lamp and manufacturing process
CN100573944C (en) * 2007-03-07 2009-12-23 光宝科技股份有限公司 white light emitting diode
WO2009025469A2 (en) 2007-08-22 2009-02-26 Seoul Semiconductor Co., Ltd. Non stoichiometric tetragonal copper alkaline earth silicate phosphors and method of preparing the same
KR101055769B1 (en) 2007-08-28 2011-08-11 서울반도체 주식회사 Light-emitting device adopting non-stoichiometric tetra-alkaline earth silicate phosphor
DE102009030205A1 (en) 2009-06-24 2010-12-30 Litec-Lp Gmbh Phosphors with Eu (II) -doped silicate luminophores
KR101055762B1 (en) 2009-09-01 2011-08-11 서울반도체 주식회사 Light-emitting device employing a light-emitting material having an oxyosilicate light emitter
US8593040B2 (en) 2009-10-02 2013-11-26 Ge Lighting Solutions Llc LED lamp with surface area enhancing fins
US9500355B2 (en) 2012-05-04 2016-11-22 GE Lighting Solutions, LLC Lamp with light emitting elements surrounding active cooling device
EP3313960B1 (en) * 2015-06-24 2019-10-23 Seaborough IP I B.V. Phosphor ceramic
CN107384383A (en) * 2017-08-18 2017-11-24 苏州轻光材料科技有限公司 A kind of compound fluorescent material of UV excited white lights LED

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001144331A (en) * 1999-09-02 2001-05-25 Toyoda Gosei Co Ltd Light emitting device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001144331A (en) * 1999-09-02 2001-05-25 Toyoda Gosei Co Ltd Light emitting device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
13144331

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170017315A (en) 2015-08-06 2017-02-15 정수동 LED light source for implementing a high S/P ratio
KR20170003082U (en) 2017-08-21 2017-09-01 정수동 Smt led light source with improved s/p ratio

Also Published As

Publication number Publication date
DE10301169A1 (en) 2003-07-31
KR20030063211A (en) 2003-07-28
CN1434521A (en) 2003-08-06
CN1266776C (en) 2006-07-26
JP2003224306A (en) 2003-08-08

Similar Documents

Publication Publication Date Title
KR100702297B1 (en) Manufacturing method of white LED
KR100704492B1 (en) Method for manufacturing white light emitting diode using phosphor
US20100040769A1 (en) Method for Manufacturing a Triple Wavelengths White Led
KR100666265B1 (en) Phosphor and light emitting device using same
US8541798B2 (en) Semiconductor light emitting device, and backlight and display device comprising the semiconductor light emitting device
KR100920533B1 (en) Lighting device having at least one LED as a light source
US6805600B2 (en) Method of manufacturing white light source
US20050224828A1 (en) Using multiple types of phosphor in combination with a light emitting device
KR20050051533A (en) Luminous device
US20050093422A1 (en) White light-emitting device
JP2005093985A (en) Method of producing white light by secondary excitation method and its white light emitting device
CN101257012A (en) light emitting device
CN101493216A (en) LED light source module
JP2010050438A (en) White light-emitting diode
US20030228412A1 (en) Method for manufacturing a triple wavelengths white led
US7919785B2 (en) Phosphor for white light-emitting diodes and fabrication of the same
KR101220669B1 (en) Phosphor and led lamp using the phosphor
JP2004296830A (en) Manufacturing method of white LED
CN100385690C (en) White light emitting method capable of adjusting color temperature
US20050236958A1 (en) White light-emitting device
CN107425106B (en) A kind of quantum dot combination ultraviolet excitation white light LED light-emitting device
KR100612962B1 (en) White light emitting diode using three wavelength phosphor
CN100449803C (en) Phosphor and white light emitting diode thereof
US7238304B2 (en) Green light emitting phosphor and light emitting device
US20050218781A1 (en) Triple wavelengths light emitting diode

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20120215

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20130227

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20160321

Year of fee payment: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

FPAY Annual fee payment

Payment date: 20190314

Year of fee payment: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 15

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20220327

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20220327

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000