KR100695727B1 - 압전 복합체 센서 - Google Patents
압전 복합체 센서 Download PDFInfo
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- KR100695727B1 KR100695727B1 KR1020050049729A KR20050049729A KR100695727B1 KR 100695727 B1 KR100695727 B1 KR 100695727B1 KR 1020050049729 A KR1020050049729 A KR 1020050049729A KR 20050049729 A KR20050049729 A KR 20050049729A KR 100695727 B1 KR100695727 B1 KR 100695727B1
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- 229910052751 metal Inorganic materials 0.000 claims description 21
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- 229910002113 barium titanate Inorganic materials 0.000 claims description 6
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical group [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 6
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 6
- 239000006104 solid solution Substances 0.000 claims description 6
- 239000002033 PVDF binder Substances 0.000 claims description 5
- 239000004743 Polypropylene Substances 0.000 claims description 5
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- 229920002635 polyurethane Polymers 0.000 claims description 5
- 239000004814 polyurethane Substances 0.000 claims description 5
- 229920002379 silicone rubber Polymers 0.000 claims description 5
- 239000004698 Polyethylene Substances 0.000 claims description 4
- 229920000573 polyethylene Polymers 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910001111 Fine metal Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000000465 moulding Methods 0.000 description 7
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- 239000010936 titanium Substances 0.000 description 2
- MIZLGWKEZAPEFJ-UHFFFAOYSA-N 1,1,2-trifluoroethene Chemical group FC=C(F)F MIZLGWKEZAPEFJ-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
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- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 238000010291 electrical method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920001084 poly(chloroprene) Polymers 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 229920002959 polymer blend Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000131 polyvinylidene Polymers 0.000 description 1
- LJCNRYVRMXRIQR-OLXYHTOASA-L potassium sodium L-tartrate Chemical compound [Na+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O LJCNRYVRMXRIQR-OLXYHTOASA-L 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000011006 sodium potassium tartrate Nutrition 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000011032 tourmaline Substances 0.000 description 1
- 229940070527 tourmaline Drugs 0.000 description 1
- 229910052613 tourmaline Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/877—Conductive materials
- H10N30/878—Conductive materials the principal material being non-metallic, e.g. oxide or carbon based
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/084—Shaping or machining of piezoelectric or electrostrictive bodies by moulding or extrusion
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
- H10N30/302—Sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/60—Piezoelectric or electrostrictive devices having a coaxial cable structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/857—Macromolecular compositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/877—Conductive materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
Description
Claims (9)
- 삭제
- 삭제
- 금속, 전도성 복합체, 전도성 고분자 중 선택된 적어도 어느 하나로 이루어지고, 소정 길이를 갖는 전선형태의 내부 전극과;상기 내부 전극의 둘레를 둘러싸고, 압전 복합체로 이루어진 압전 재료층; 및상기 압전 재료층의 외부를 둘러싸고, 상기 전도성 복합체 또는 전도성 고분자로 이루어진 외부 전극을 포함하고,상기 전도성 복합체 또는 전도성 고분자는 전도성 충진 입자와 고분자 기지를 혼합하여 이루어지고, 상기 압전 재료층은 압전체 분말과 고분자를 혼합하여 이루어지는 것을 특징으로 하는 압전 복합체 센서.
- 청구항 3에 있어서,상기 압전 재료층과 상기 외부 전극의 내부에 길이 방향으로 형성되도록 금속 세선을 포함하는 것을 특징으로 하는 압전 복합체 센서.
- 금속, 전도성 복합체, 전도성 고분자 중 선택된 적어도 어느 하나로 이루어진 구형의 내부 전극과;상기 내부 전극을 둘러싸고, 압전 복합체로 이루어진 압전 재료층; 및상기 압전 재료층을 둘러싸되, 상기 압전 재료층의 소정 영역을 제외하여 둘러싸고, 상기 전도성 복합체 또는 전도성 고분자로 이루어진 외부 전극을 포함하고,상기 전도성 복합체 또는 전도성 고분자는 전도성 충진 입자와 고분자 기지를 혼합하여 이루어지고, 상기 압전 재료층은 압전체 분말과 고분자를 혼합하여 이루어지며,일단이 상기 내부 전극과 연결되고 상기 압전 재료층을 관통하여 타단이 상기 압전 재료층의 소정 영역에 노출된 연장선을 더 포함하는 것을 특징으로 하는 압전 복합체 센서.
- 청구항 3 내지 청구항 5 중 어느 한 항에 있어서,상기 전도성 충진 입자는 카본 또는 금속 분말을 포함하는 것을 특징으로 하는 압전 복합체 센서.
- 청구항 3 내지 청구항 5 중 어느 한 항에 있어서,상기 고분자 기지는 실리콘 고무(silicon rubber), 폴리우레탄(polyurethane), 폴리에틸렌 (Polyethylene), 폴리프로필렌 (Polypropylene), Poly(ethylene-co-acrylic acid), PVDF (Polyvinylidene fluoride), PTFE (Polytetrafluorethylene)로 이루어진 군 중에서 선택된 하나의 고분자 기지 또는 둘 이상의 혼합물을 포함하는 것을 특징으로 하는 압전 복합체 센서.
- 청구항 3 내지 청구항 5 중 어느 한 항에 있어서,상기 압전체 분말은 티탄산바륨(BaTiO3), PbZrO3-PbTiO3 고용체(PZT), PbZrO3-PbTiO3-Pb(Mg1/3 Nb2/3) 고용체(PZT-PMN), TiO2, TiO3, SiO2, ZnO, SnO2Zr로 이루어진 군 중에서 선택된 하나의 세라믹 또는 둘 이상의 혼합물을 포함하는 것을 특징으로 하는 압전 복합체 센서.
- 청구항 3 내지 청구항 5 중 어느 한 항에 있어서,상기 압전 재료층, 전극, 내부 전극 및 외부 전극은 압출 및 사출 성형으로 형성되는 것을 특징으로 하는 압전 복합체 센서.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050049729A KR100695727B1 (ko) | 2005-06-10 | 2005-06-10 | 압전 복합체 센서 |
PCT/KR2006/000165 WO2006132463A1 (en) | 2005-06-10 | 2006-01-16 | Piezo-electric composite sensor |
US11/916,980 US20090302714A1 (en) | 2005-06-10 | 2006-01-16 | Piezo-electric composite sensor |
JP2008515616A JP2008544218A (ja) | 2005-06-10 | 2006-01-16 | 圧電複合体センサー |
CN2006800200779A CN101194376B (zh) | 2005-06-10 | 2006-01-16 | 压电复合传感器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020050049729A KR100695727B1 (ko) | 2005-06-10 | 2005-06-10 | 압전 복합체 센서 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060128360A KR20060128360A (ko) | 2006-12-14 |
KR100695727B1 true KR100695727B1 (ko) | 2007-03-15 |
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Family Applications (1)
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KR1020050049729A Expired - Fee Related KR100695727B1 (ko) | 2005-06-10 | 2005-06-10 | 압전 복합체 센서 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20090302714A1 (ko) |
JP (1) | JP2008544218A (ko) |
KR (1) | KR100695727B1 (ko) |
CN (1) | CN101194376B (ko) |
WO (1) | WO2006132463A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101336196B1 (ko) | 2011-08-18 | 2013-12-05 | 한국과학기술원 | 생체용 나노제너레이터 및 그 제조방법 |
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KR101027778B1 (ko) * | 2008-09-04 | 2011-04-12 | 한국기계연구원 | 우수한 기계적 강도 및 높은 전기전도성을 가지는 압저항 복합체 및 이의 제조방법 |
KR100918188B1 (ko) * | 2009-07-30 | 2009-09-22 | (주)동방데이타테크놀러지 | 자가 발전형 진동 센서 및 이를 이용한 진동 센서 모듈 |
EP2539475B1 (en) * | 2010-02-24 | 2019-09-11 | Belenos Clean Power Holding AG | Self-monitoring composite vessel for high pressure media |
US8803406B2 (en) | 2010-11-30 | 2014-08-12 | KAIST (Korea Advanced Institute of Science and Technology) | Flexible nanocomposite generator and method for manufacturing the same |
US8303897B2 (en) | 2011-02-28 | 2012-11-06 | Colla Jeannine O | Capacitive sensor for organic chemicals comprising an elastomer and high dielectric materials with titanate |
EP2891886B1 (en) * | 2012-08-31 | 2018-10-10 | The University of Tokyo | Detector and detection method |
CN103684044B (zh) * | 2012-09-03 | 2016-01-27 | 中国科学院理化技术研究所 | 压电薄膜发电器及其制作方法 |
US10260968B2 (en) | 2013-03-15 | 2019-04-16 | Nano Composite Products, Inc. | Polymeric foam deformation gauge |
JP6302041B2 (ja) | 2013-03-15 | 2018-03-28 | ナノ コンポジット プロダクツ インコーポレイテッド | 歪みゲージとして使用される複合材料 |
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CN103515525B (zh) * | 2013-08-23 | 2018-07-27 | 尼米仪器株式会社 | 一种柔性贴片传感器 |
US9857246B2 (en) | 2014-09-17 | 2018-01-02 | Sensable Technologies, Llc | Sensing system including a sensing membrane |
CN104326745B (zh) * | 2014-10-11 | 2016-08-17 | 中国科学院上海硅酸盐研究所 | 一种在宽温区内具有高压电性能和温度稳定性的压电材料及其应用 |
KR101781680B1 (ko) * | 2014-12-02 | 2017-09-25 | 한양대학교 산학협력단 | 유연성 및 신축성이 우수한 압전 섬유 및 이의 제조방법 |
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WO2017145530A1 (ja) * | 2016-02-22 | 2017-08-31 | 株式会社村田製作所 | 圧電デバイス |
CN108299728A (zh) * | 2017-01-13 | 2018-07-20 | 中国人民大学 | 一种柔性压电传感器及其专用压电复合材料 |
KR101988729B1 (ko) * | 2017-09-11 | 2019-06-13 | 전남대학교산학협력단 | 신축성 스피커 |
CN107623068B (zh) * | 2017-09-18 | 2020-11-27 | 中北大学 | 基于叉指电极结构柔性可拉伸压电纳米发电机及制备方法 |
CN107452867B (zh) * | 2017-09-18 | 2020-06-09 | 中北大学 | 柔性可拉伸一体式压电橡胶及其制备方法 |
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- 2006-01-16 US US11/916,980 patent/US20090302714A1/en not_active Abandoned
- 2006-01-16 JP JP2008515616A patent/JP2008544218A/ja active Pending
- 2006-01-16 WO PCT/KR2006/000165 patent/WO2006132463A1/en active Application Filing
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Also Published As
Publication number | Publication date |
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CN101194376B (zh) | 2010-12-08 |
KR20060128360A (ko) | 2006-12-14 |
CN101194376A (zh) | 2008-06-04 |
US20090302714A1 (en) | 2009-12-10 |
JP2008544218A (ja) | 2008-12-04 |
WO2006132463A1 (en) | 2006-12-14 |
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