KR100691488B1 - Semiconductor package - Google Patents

Abstract

The present invention relates to a semiconductor package, wherein the first and second ball landing parts are formed to be in contact with wires which are not connected to wires electrically connected to the input / output pads and bonding wires of the semiconductor chip, and the first and second balls. A BGA type semiconductor package comprising first and second balls formed of a conductive metal, each of which is used as a non-connected ball that is not connected to an effective ball electrically connected to an external circuit. And an insulating film is formed on a portion of the surface of the first ball and a surface of the second ball so that the first ball of the portion to be electrically connected to the first ball is exposed. Therefore, since arc discharge is prevented from occurring between the NC ball and the effective ball due to the electrostatic stress, the integrated circuit of the semiconductor chip can be prevented from electrostatic destruction.

BGA, Package, ESD, Non-connected, Power Failure

Description

Semiconductor Package {Semiconductor package}             

1 is a cross-sectional view of a BGA type semiconductor package according to the prior art.

2 is a cross-sectional view of a BGA type semiconductor package according to the present invention.

Explanation of symbols on the main parts of the drawings

51 semiconductor chip 53 input / output pad

55: package substrate 63: adhesive

57, 58: first and second metal wiring

59 and 60: first and second insulating layers

61 and 62: first and second ball landing portion

65 and 67: first and second balls 68: insulating film

69: bonding wire 71: molding part

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor package, and more particularly, to a BGA type semiconductor package capable of suppressing damage due to electrostatic discharge (hereinafter, referred to as ESD).

As semiconductor chips become more integrated, the number of pins of the external pins increases, as well as the gap between the pins becomes smaller, making them vulnerable to external electric shocks such as ESD. Therefore, in recent years, a semiconductor package has a Ball Grid Array (BGA) package or a flip chip package using a ball as an input / output structure for electrically connecting an integrated circuit formed on an internal semiconductor chip with an external device. have.

1 is a cross-sectional view of a BGA type semiconductor package according to the prior art.

In the BGA type semiconductor package according to the prior art, the semiconductor chip 11 is mounted on the surface of the package substrate 15 so that the surface of the integrated circuit is bonded by the adhesive 23, and the input and output formed on the same surface as the integrated circuit. The pad 13 is mounted to be exposed without being in contact with the package substrate 15. Therefore, openings are formed and exposed in portions corresponding to the input / output pads 13 of the package substrate 15.

The package substrate 15 has first and second metal wires 17 and 18 formed on upper and lower surfaces thereof, and the first and second insulations covering the first and second metal wires 17 and 18. Layers 19 and 20 are formed. Except for the predetermined portion of the first metal wire 17, the bonding wire 69 is electrically connected to the input / output pad 13, and the predetermined portion is electrically open. In addition, the first and second ball landing parts 21 and 22 of the conductive metal are formed on the exposed portion of the first metal wire 17, and the first ball landing part 21 is formed of a bonding wire 29. It is electrically connected, and the second ball landing portion 22 is not electrically connected to the bonding wire 29.

First and second balls 25 and 27 made of a conductive metal are formed in the first and second ball landing parts 21 and 22. The first ball 25 is an effective ball connected to an integrated circuit of the semiconductor chip 11 through an input / output pad 13 to receive power from an external circuit (not shown) or to transmit or receive an electrical signal. . In addition, the second ball 27 is a non-connected (NC) ball which is not used in the current product but is connected to the semiconductor chip 11 because it is not connected to the bonding wire 29 as preliminary pins formed for the future. .

A molding part 31 is formed on the package substrate 15 to cover and seal the semiconductor chip 11. The molding part 31 is formed to cover and seal the I / O pad 13 and the bonding wire 29 of the semiconductor chip 11 which is not in contact with the package substrate 15.

In the conventional BGA type semiconductor package having the above-described configuration, an external electric shock such as static electricity may be introduced through the second ball 27 to destroy the semiconductor chip 11.

The table below shows the results of the human body model (hereinafter referred to as HBM) ESD test for the 84-ball BGA type semiconductor package.

[table]

Test method Test results All balls including first and second balls <2000 V With second ball only <2000 V Only first ball included 〉 4000V

In the results shown in [Table], the HBM ESD test of the 84-ball BGA type semiconductor package with only the first and second balls 25 and 27 or only the second balls 27 resulted in 2000V integrated circuit of the semiconductor chip 11. It is damaged below and a defect arises. However, as a result of testing only the first ball 25 except for the second ball 27, the integrated circuit of the semiconductor chip 11 is not damaged even at 4000V or more.

In the above mechanism of ESD damage by the second ball 27, the electrostatic stress applied to the second ball 27 causes an arc discharge with the adjacent first ball 25, and thus the semiconductor chip 11 is formed through the input / output pad 13. To destroy the integrated circuit.

However, the conventional BGA type semiconductor package cannot prevent the arc discharge from being generated between the effective ball due to the electrostatic stress applied to the NC ball, and thus cannot reduce the damage of the integrated circuit of the semiconductor chip by ESD. There was a problem.

Accordingly, it is an object of the present invention to provide a semiconductor package capable of preventing the arc discharge between the NC ball and the effective ball due to electrostatic stress to prevent electrostatic destruction of the integrated circuit of the semiconductor chip.

In order to achieve the above object, a semiconductor package according to the present invention includes first and second ball landing parts formed to be in contact with a wire which is not connected to a wire electrically connected to an input / output pad and a bonding wire of a semiconductor chip, In the BGA type semiconductor package comprising first and second balls formed of a conductive metal, respectively, and used as non-connected balls, which are not connected to an effective ball electrically connected to an external circuit. And an insulating film is formed on a part of the surface of the first ball and a surface of the second ball so that the first ball of the portion to be electrically connected to the external circuit is exposed.

In the above, the insulating film is formed on the surface except the entire surface or the end of the second ball, and the insulating film is formed on the surface except the end of the first ball.

In order to achieve the above object, a semiconductor package according to another exemplary embodiment of the present invention may include first and second ball landing parts formed to be in contact with wires which are not connected to wires electrically connected to an input / output pad and a bonding wire of a semiconductor chip, respectively. And first and second balls formed in the first and second ball landing parts, respectively, and used as non-connected balls, which are not connected to an effective ball electrically connected to an external circuit. In this case, the first ball is formed of a conductive metal and the second ball is formed of an insulating material.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

2 is a cross-sectional view of a BGA type semiconductor package according to an embodiment of the present invention.

In the BGA type semiconductor package according to the exemplary embodiment of the present invention, the semiconductor chip 51 is mounted such that the surface on which the integrated circuit is formed is adhered onto the package substrate 55 by the adhesive 63. In the semiconductor chip 51, the input / output pad 53 is formed on the same surface as the integrated circuit, and the input / output pad 53 is mounted to be exposed without being in contact with the package substrate 55. Therefore, openings are formed and exposed in portions corresponding to the input / output pads 53 of the package substrate 55.

The package substrate 55 has first and second metal wires 57 and 58 formed on upper and lower surfaces thereof, and the first and second insulations covering the first and second metal wires 57 and 58. Layers 59 and 60 are formed. The first metal wiring 57 is electrically connected to the input / output pad 53 by the bonding wire 69 except for a predetermined portion, and the predetermined portion is electrically open. In addition, the first and second ball landing parts 61 and 62 of the conductive metal are formed on the exposed portion of the first metal wire 57, and the first ball landing part 61 is connected to the bonding wire 69. It is electrically connected, and the second ball landing portion 62 is not electrically connected to the bonding wire 69.

First and second balls 65 and 67 made of a conductive metal are formed in the first and second ball landing portions 61 and 62. In this case, the first ball 65 is connected to the integrated circuit of the semiconductor chip 51 through the input / output pad 53 to receive power from an external circuit (not shown) or to transmit or receive an electrical signal. . In addition, the second ball 67 is a non-connected (NC) ball which is not used in the current product but is electrically connected to the semiconductor chip 51 because it is not connected to the bonding wire 69 as preliminary pins formed for the future. .

An external electric shock such as static electricity flows into the second ball 67 used as the NC ball to generate an arc discharge with the adjacent first ball 55 so that the first ball landing part 61 and the first metal wiring 57 ), The bonding wire 69 and the input / output pad 53 may destroy the semiconductor chip 51. Therefore, the insulating film 68 must be formed on the surface of the second ball 67 to prevent an external electric shock such as static electricity from flowing in. The insulating film 68 may be formed of the same insulating material as the first and second insulating layers 59 and 60, but may be formed on the surface of the second ball 67 except for the entire surface or the end portion thereof.

A molding part 71 is formed on the package substrate 55 to cover and seal the semiconductor chip 51. The molding part 71 is formed to cover and seal the I / O pad 53 and the bonding wire 69 of the semiconductor chip 51, which is not in contact with the package substrate 55.

Since an external electric shock such as static electricity is prevented from flowing into the second ball 67 by the insulating film 68, the arc discharge is prevented from occurring between the adjacent first balls 65. This electrostatic breakdown can be prevented. That is, since the static electricity is prevented from flowing in the second ball 67 and the HBM level drop phenomenon disappears, when the HBM ESD test is performed on the 84-ball BGA type semiconductor package, only the first ball 65 is tested, as shown in the semiconductor chip. The integrated circuit of 51 is prevented from being damaged even at 4000V or more.

In addition, as another embodiment of the present invention, when the insulating film 68 is formed on the surface except the end of the second ball 67, the insulating film may also be formed on the surface except the end of the first ball (65). In this case, it is possible to further reduce the occurrence of the arc discharge phenomenon between the first ball 65 and the second ball 67.

In addition, as another embodiment of the present invention, the second ball 67 itself may be formed of the same insulating material as that of the first and second insulating layers 59 and 60. In this case, the insulating film does not need to be formed on the surface of the second ball 67.

Although the technical idea of the present invention has been described in detail according to the above preferred embodiment, it should be noted that the above-described embodiment is for the purpose of description and not of limitation. In addition, those skilled in the art will understand that various embodiments are possible within the scope of the technical idea of the present invention.

Therefore, the present invention prevents the arc discharge from being generated between the NC ball and the effective ball by the electrostatic stress, so that the integrated circuit of the semiconductor chip can be prevented from electrostatic destruction.

Claims (4)

First and second ball landing parts and the first and second ball landing parts respectively formed to be in contact with the wires that are not connected to the wires electrically connected to the input / output pads and the bonding wires of the semiconductor chip, and the first and second ball landing parts, respectively, In the BGA type semiconductor package including the first and second balls are used as non-connected (NC) ball that is not connected to the effective ball electrically connected to the external circuit, BGA type semiconductor package, characterized in that the insulating film is formed on the surface of the second ball and the part of the first ball so that the first ball of the portion to be electrically connected to the external circuit. The BGA type semiconductor package of claim 1, wherein the insulating layer is formed on a surface of the second ball except for the entire surface or the end portion thereof. delete First and second ball landing parts and the first and second ball landing parts respectively formed in contact with the wires that are not connected to the wires electrically connected to the input / output pads and the bonding wires of the semiconductor chip, and the external circuits A BGA type semiconductor package comprising first and second balls used as non-connected balls that are not connected to an effective ball electrically connected to the The first ball is formed of a conductive metal and the second ball is a BGA type semiconductor package, characterized in that formed with an insulating material.

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