KR100663662B1 - 마이크로전자 기판으로부터 도전성 물질을 전기적, 기계적 및/또는 화학적으로 제거하기 위한 장치 및 방법 - Google Patents
마이크로전자 기판으로부터 도전성 물질을 전기적, 기계적 및/또는 화학적으로 제거하기 위한 장치 및 방법 Download PDFInfo
- Publication number
- KR100663662B1 KR100663662B1 KR1020037016758A KR20037016758A KR100663662B1 KR 100663662 B1 KR100663662 B1 KR 100663662B1 KR 1020037016758 A KR1020037016758 A KR 1020037016758A KR 20037016758 A KR20037016758 A KR 20037016758A KR 100663662 B1 KR100663662 B1 KR 100663662B1
- Authority
- KR
- South Korea
- Prior art keywords
- conductive material
- microelectronic substrate
- substrate
- electrodes
- polishing pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 396
- 239000004020 conductor Substances 0.000 title claims abstract description 266
- 238000004377 microelectronic Methods 0.000 title claims abstract description 256
- 238000000034 method Methods 0.000 title claims abstract description 213
- 238000005498 polishing Methods 0.000 claims abstract description 212
- 239000003792 electrolyte Substances 0.000 claims abstract description 161
- 239000012530 fluid Substances 0.000 claims abstract description 96
- 238000004891 communication Methods 0.000 claims abstract description 21
- 230000001590 oxidative effect Effects 0.000 claims abstract description 20
- 230000003647 oxidation Effects 0.000 claims abstract description 19
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims description 164
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 90
- 229910052697 platinum Inorganic materials 0.000 claims description 45
- 239000007788 liquid Substances 0.000 claims description 44
- 239000004065 semiconductor Substances 0.000 claims description 31
- -1 chlorine ions Chemical class 0.000 claims description 24
- 239000000126 substance Substances 0.000 claims description 24
- 239000000460 chlorine Substances 0.000 claims description 23
- 229910052801 chlorine Inorganic materials 0.000 claims description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 17
- 239000010949 copper Substances 0.000 claims description 17
- 229910052802 copper Inorganic materials 0.000 claims description 17
- 230000004888 barrier function Effects 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 14
- 229920005591 polysilicon Polymers 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 13
- 229910052721 tungsten Inorganic materials 0.000 claims description 13
- 239000010937 tungsten Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 239000003989 dielectric material Substances 0.000 claims description 11
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 10
- 230000008878 coupling Effects 0.000 claims description 7
- 238000010168 coupling process Methods 0.000 claims description 7
- 238000005859 coupling reaction Methods 0.000 claims description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 230000007797 corrosion Effects 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052741 iridium Inorganic materials 0.000 claims description 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 4
- 150000007524 organic acids Chemical class 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 229910000510 noble metal Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 239000010948 rhodium Substances 0.000 claims description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 3
- 150000007522 mineralic acids Chemical class 0.000 claims description 2
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 2
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 claims 2
- 239000013043 chemical agent Substances 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 230000002401 inhibitory effect Effects 0.000 claims 1
- 239000007769 metal material Substances 0.000 claims 1
- 239000002243 precursor Substances 0.000 claims 1
- 230000008569 process Effects 0.000 description 40
- 230000008901 benefit Effects 0.000 description 21
- 239000000243 solution Substances 0.000 description 11
- 239000007864 aqueous solution Substances 0.000 description 9
- 230000033001 locomotion Effects 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- 230000003993 interaction Effects 0.000 description 7
- 239000002002 slurry Substances 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 239000000499 gel Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003487 electrochemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000001103 potassium chloride Substances 0.000 description 2
- 235000011164 potassium chloride Nutrition 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 241000233805 Phoenix Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229940090961 chromium dioxide Drugs 0.000 description 1
- IAQWMWUKBQPOIY-UHFFFAOYSA-N chromium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Cr+4] IAQWMWUKBQPOIY-UHFFFAOYSA-N 0.000 description 1
- AYTAKQFHWFYBMA-UHFFFAOYSA-N chromium(IV) oxide Inorganic materials O=[Cr]=O AYTAKQFHWFYBMA-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000002001 electrolyte material Substances 0.000 description 1
- 238000000866 electrolytic etching Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- CEDFMXXSTXOAGO-UHFFFAOYSA-N gold platinum Chemical compound [Pt].[Pt].[Au] CEDFMXXSTXOAGO-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000011244 liquid electrolyte Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- PXXKQOPKNFECSZ-UHFFFAOYSA-N platinum rhodium Chemical compound [Rh].[Pt] PXXKQOPKNFECSZ-UHFFFAOYSA-N 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/046—Lapping machines or devices; Accessories designed for working plane surfaces using electric current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/16—Polishing
- C25F3/30—Polishing of semiconducting materials
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F5/00—Electrolytic stripping of metallic layers or coatings
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
- H01L21/32125—Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Weting (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Element Separation (AREA)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/888,002 | 2001-06-21 | ||
| US09/887,767 US7094131B2 (en) | 2000-08-30 | 2001-06-21 | Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material |
| US09/888,002 US7160176B2 (en) | 2000-08-30 | 2001-06-21 | Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate |
| US09/887,767 | 2001-06-21 | ||
| US09/888,084 | 2001-06-21 | ||
| US09/888,084 US7112121B2 (en) | 2000-08-30 | 2001-06-21 | Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate |
| PCT/US2002/019495 WO2003001581A2 (fr) | 2001-06-21 | 2002-06-20 | Procedes et dispositif pour le retrait d'un materiau conducteur d'un substrat micro-electronique par voie electrique, mecanique ou chimique |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20040010773A KR20040010773A (ko) | 2004-01-31 |
| KR100663662B1 true KR100663662B1 (ko) | 2007-01-03 |
Family
ID=27420529
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020037016756A Expired - Fee Related KR100598477B1 (ko) | 2001-06-21 | 2002-06-20 | 무딘 코너형 간극들을 갖는 도전 재료를 구비한 마이크로전자 기판과, 도전 재료를 제거하기 위한 연관된 방법들 |
| KR1020037016758A Expired - Fee Related KR100663662B1 (ko) | 2001-06-21 | 2002-06-20 | 마이크로전자 기판으로부터 도전성 물질을 전기적, 기계적 및/또는 화학적으로 제거하기 위한 장치 및 방법 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020037016756A Expired - Fee Related KR100598477B1 (ko) | 2001-06-21 | 2002-06-20 | 무딘 코너형 간극들을 갖는 도전 재료를 구비한 마이크로전자 기판과, 도전 재료를 제거하기 위한 연관된 방법들 |
Country Status (6)
| Country | Link |
|---|---|
| EP (2) | EP1399956A2 (fr) |
| JP (2) | JP2004531899A (fr) |
| KR (2) | KR100598477B1 (fr) |
| CN (1) | CN100356523C (fr) |
| AU (1) | AU2002316303A1 (fr) |
| WO (2) | WO2003001581A2 (fr) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7125477B2 (en) | 2000-02-17 | 2006-10-24 | Applied Materials, Inc. | Contacts for electrochemical processing |
| US6979248B2 (en) | 2002-05-07 | 2005-12-27 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
| US7066800B2 (en) | 2000-02-17 | 2006-06-27 | Applied Materials Inc. | Conductive polishing article for electrochemical mechanical polishing |
| US7303662B2 (en) | 2000-02-17 | 2007-12-04 | Applied Materials, Inc. | Contacts for electrochemical processing |
| US6962524B2 (en) | 2000-02-17 | 2005-11-08 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
| US6991526B2 (en) | 2002-09-16 | 2006-01-31 | Applied Materials, Inc. | Control of removal profile in electrochemically assisted CMP |
| US7303462B2 (en) | 2000-02-17 | 2007-12-04 | Applied Materials, Inc. | Edge bead removal by an electro polishing process |
| US6848970B2 (en) | 2002-09-16 | 2005-02-01 | Applied Materials, Inc. | Process control in electrochemically assisted planarization |
| US7059948B2 (en) | 2000-12-22 | 2006-06-13 | Applied Materials | Articles for polishing semiconductor substrates |
| US6991528B2 (en) | 2000-02-17 | 2006-01-31 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
| US7077721B2 (en) | 2000-02-17 | 2006-07-18 | Applied Materials, Inc. | Pad assembly for electrochemical mechanical processing |
| US7374644B2 (en) | 2000-02-17 | 2008-05-20 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
| US7029365B2 (en) | 2000-02-17 | 2006-04-18 | Applied Materials Inc. | Pad assembly for electrochemical mechanical processing |
| US7137879B2 (en) | 2001-04-24 | 2006-11-21 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
| US7344432B2 (en) | 2001-04-24 | 2008-03-18 | Applied Materials, Inc. | Conductive pad with ion exchange membrane for electrochemical mechanical polishing |
| US6837983B2 (en) * | 2002-01-22 | 2005-01-04 | Applied Materials, Inc. | Endpoint detection for electro chemical mechanical polishing and electropolishing processes |
| US7112270B2 (en) | 2002-09-16 | 2006-09-26 | Applied Materials, Inc. | Algorithm for real-time process control of electro-polishing |
| US7842169B2 (en) | 2003-03-04 | 2010-11-30 | Applied Materials, Inc. | Method and apparatus for local polishing control |
| US7186164B2 (en) | 2003-12-03 | 2007-03-06 | Applied Materials, Inc. | Processing pad assembly with zone control |
| US7390744B2 (en) | 2004-01-29 | 2008-06-24 | Applied Materials, Inc. | Method and composition for polishing a substrate |
| US7084064B2 (en) | 2004-09-14 | 2006-08-01 | Applied Materials, Inc. | Full sequence metal and barrier layer electrochemical mechanical processing |
| US7520968B2 (en) | 2004-10-05 | 2009-04-21 | Applied Materials, Inc. | Conductive pad design modification for better wafer-pad contact |
| US7427340B2 (en) | 2005-04-08 | 2008-09-23 | Applied Materials, Inc. | Conductive pad |
| US7998335B2 (en) | 2005-06-13 | 2011-08-16 | Cabot Microelectronics Corporation | Controlled electrochemical polishing method |
| US7422982B2 (en) | 2006-07-07 | 2008-09-09 | Applied Materials, Inc. | Method and apparatus for electroprocessing a substrate with edge profile control |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01241129A (ja) * | 1988-03-23 | 1989-09-26 | Toshiba Corp | 半導体装置の製造方法 |
| KR960006714B1 (ko) * | 1990-05-28 | 1996-05-22 | 가부시끼가이샤 도시바 | 반도체 장치의 제조 방법 |
| JPH10189909A (ja) * | 1996-12-27 | 1998-07-21 | Texas Instr Japan Ltd | 誘電体キャパシタ及び誘電体メモリ装置と、これらの製造方法 |
| US5911619A (en) * | 1997-03-26 | 1999-06-15 | International Business Machines Corporation | Apparatus for electrochemical mechanical planarization |
| US6171467B1 (en) * | 1997-11-25 | 2001-01-09 | The John Hopkins University | Electrochemical-control of abrasive polishing and machining rates |
| KR100280107B1 (ko) * | 1998-05-07 | 2001-03-02 | 윤종용 | 트렌치 격리 형성 방법 |
| US6143155A (en) * | 1998-06-11 | 2000-11-07 | Speedfam Ipec Corp. | Method for simultaneous non-contact electrochemical plating and planarizing of semiconductor wafers using a bipiolar electrode assembly |
| US6121152A (en) * | 1998-06-11 | 2000-09-19 | Integrated Process Equipment Corporation | Method and apparatus for planarization of metallized semiconductor wafers using a bipolar electrode assembly |
| JP4513145B2 (ja) * | 1999-09-07 | 2010-07-28 | ソニー株式会社 | 半導体装置の製造方法および研磨方法 |
| US6797623B2 (en) * | 2000-03-09 | 2004-09-28 | Sony Corporation | Methods of producing and polishing semiconductor device and polishing apparatus |
| US6867448B1 (en) * | 2000-08-31 | 2005-03-15 | Micron Technology, Inc. | Electro-mechanically polished structure |
| JP2002093761A (ja) * | 2000-09-19 | 2002-03-29 | Sony Corp | 研磨方法、研磨装置、メッキ方法およびメッキ装置 |
| US6736952B2 (en) * | 2001-02-12 | 2004-05-18 | Speedfam-Ipec Corporation | Method and apparatus for electrochemical planarization of a workpiece |
-
2002
- 2002-06-20 CN CNB028122380A patent/CN100356523C/zh not_active Expired - Fee Related
- 2002-06-20 KR KR1020037016756A patent/KR100598477B1/ko not_active Expired - Fee Related
- 2002-06-20 EP EP02744464A patent/EP1399956A2/fr not_active Withdrawn
- 2002-06-20 AU AU2002316303A patent/AU2002316303A1/en not_active Abandoned
- 2002-06-20 KR KR1020037016758A patent/KR100663662B1/ko not_active Expired - Fee Related
- 2002-06-20 WO PCT/US2002/019495 patent/WO2003001581A2/fr active Application Filing
- 2002-06-20 JP JP2003507879A patent/JP2004531899A/ja active Pending
- 2002-06-20 WO PCT/US2002/019496 patent/WO2003001582A2/fr active Application Filing
- 2002-06-20 JP JP2003507878A patent/JP4446271B2/ja not_active Expired - Fee Related
- 2002-06-20 EP EP02746596A patent/EP1399957A2/fr not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| EP1399957A2 (fr) | 2004-03-24 |
| CN100356523C (zh) | 2007-12-19 |
| JP4446271B2 (ja) | 2010-04-07 |
| WO2003001582A2 (fr) | 2003-01-03 |
| EP1399956A2 (fr) | 2004-03-24 |
| JP2004531649A (ja) | 2004-10-14 |
| CN1516894A (zh) | 2004-07-28 |
| WO2003001581A3 (fr) | 2003-10-30 |
| AU2002316303A1 (en) | 2003-01-08 |
| JP2004531899A (ja) | 2004-10-14 |
| WO2003001581A2 (fr) | 2003-01-03 |
| KR20040021616A (ko) | 2004-03-10 |
| KR20040010773A (ko) | 2004-01-31 |
| WO2003001582A3 (fr) | 2003-10-30 |
| KR100598477B1 (ko) | 2006-07-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100663662B1 (ko) | 마이크로전자 기판으로부터 도전성 물질을 전기적, 기계적 및/또는 화학적으로 제거하기 위한 장치 및 방법 | |
| US7588677B2 (en) | Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate | |
| US7604729B2 (en) | Methods and apparatus for selectively removing conductive material from a microelectronic substrate | |
| US7160176B2 (en) | Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate | |
| EP1536919B1 (fr) | Procede et appareil d'enlevement de matiere electroconductrice sur un substrat microelectronique par voie electromecanique et/ou electro-chimio-mecanique | |
| US7560017B2 (en) | Methods and apparatus for electrically detecting characteristics of a microelectronic substrate and/or polishing medium | |
| US20060217040A1 (en) | Methods and apparatus for removing conductive material from a microelectronic substrate | |
| US6739951B2 (en) | Method and apparatus for electrochemical-mechanical planarization | |
| US20140377953A1 (en) | Method and apparatus for simultaneously removing multiple conductive materials from microelectronic substrates | |
| US7524410B2 (en) | Methods and apparatus for removing conductive material from a microelectronic substrate | |
| CN100413037C (zh) | 从微电子基底中电、机械和/或化学除去导电材料的方法和装置 | |
| JP2008524434A (ja) | 平坦化方法及び平坦化装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| PA0105 | International application |
Patent event date: 20031222 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PA0201 | Request for examination | ||
| PG1501 | Laying open of application | ||
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20051024 Patent event code: PE09021S01D |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20060928 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20061226 Patent event code: PR07011E01D |
|
| PR1002 | Payment of registration fee |
Payment date: 20061227 End annual number: 3 Start annual number: 1 |
|
| PG1601 | Publication of registration | ||
| PR1001 | Payment of annual fee |
Payment date: 20091207 Start annual number: 4 End annual number: 4 |
|
| FPAY | Annual fee payment |
Payment date: 20101208 Year of fee payment: 5 |
|
| PR1001 | Payment of annual fee |
Payment date: 20101208 Start annual number: 5 End annual number: 5 |
|
| LAPS | Lapse due to unpaid annual fee | ||
| PC1903 | Unpaid annual fee |