KR100649870B1 - 반도체 패키지 제조용 리드프레임과, 이것을 이용한 반도체패키지 및 그 제조 방법 - Google Patents
반도체 패키지 제조용 리드프레임과, 이것을 이용한 반도체패키지 및 그 제조 방법 Download PDFInfo
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- KR100649870B1 KR100649870B1 KR1020050110476A KR20050110476A KR100649870B1 KR 100649870 B1 KR100649870 B1 KR 100649870B1 KR 1020050110476 A KR1020050110476 A KR 1020050110476A KR 20050110476 A KR20050110476 A KR 20050110476A KR 100649870 B1 KR100649870 B1 KR 100649870B1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 60
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 238000004080 punching Methods 0.000 claims abstract description 5
- 238000000465 moulding Methods 0.000 claims description 28
- 239000011347 resin Substances 0.000 claims description 18
- 229920005989 resin Polymers 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 12
- 239000002390 adhesive tape Substances 0.000 claims description 8
- 238000009966 trimming Methods 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49109—Connecting at different heights outside the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
Claims (6)
- 사이드프레임과, 반도체 칩이 실장되는 칩탑재판과, 상기 사이드프레임과 칩탑재판을 일체로 연결하는 타이바와, 상기 사이드프레임으로부터 칩탑재판의 사방 변에 인접되게 연장되는 다수의 리드를 포함하는 반도체 패키지 제조용 리드프레임에 있어서,상기 타이바의 내끝단에 일체로 성형되는 사각틀과;상기 사각틀의 안쪽에 배치되는 칩탑재판의 사방 변 위치에 관통 형성된 관통구와;상기 칩탑재판과 일체로 성형되어 상기 관통구에 일렬로 배열되는 다수개의 독립리드와;상기 칩탑재판과 다수개의 독립리드에 걸쳐 부착되어, 각 독립리드를 하나로 연결/지지해주는 테이프를 포함하여 구성되고;상기 칩탑재판과 각 독립리드간의 연결부위를 펀칭하여 다수개의 독립리드를 제각각으로 분리시킨 것을 특징으로 하는 반도체 패키지 제조용 리드프레임.
- 청구항 1에 있어서, 상기 사각틀과 칩탑재판은 연결바에 의하여 일체로 연결되며, 이 연결바가 사각틀로부터 칩탑재판까지 하향 경사지게 형성됨에 따라 상기 칩탑재판은 사각틀의 높이보다 더 낮게 다운셋 된 것을 특징으로 하는 반도체 패키 지 제조용 리드프레임.
- 청구항 1 또는 청구항 2에 있어서, 상기 각 독립리드와 칩탑재판의 저면은 패키지 제조시 외부 노출을 위해 동일한 높이로 형성되며, 상기 각 독립리드의 선단 또는 측단면에는 몰딩수지와의 결합력 향상을 위한 결합단이 돌출 형성된 것을 특징으로 하는 반도체 패키지 제조용 리드프레임.
- 청구항 1에 있어서, 상기 관통구의 저면에서 칩탑재판쪽과 접하는 부분에 몰딩수지와의 결합력 향상을 위해 요부가 형성된 것을 특징으로 하는 반도체 패키지 제조용 리드프레임.
- 사이드프레임으로부터 상기 사각틀의 사방 모서리에 인접되게 연장되는 다수의 리드와, 상기 사각틀과 사이드프레임을 일체로 연결하는 타이바와, 사각틀의 안쪽에 다운셋되며 일체로 배치되는 칩탑재판과, 이 칩탑재판의 모서리 위치에 테이프에 의하여 고정된 다수개의 독립리드를 포함하는 구조의 리드프레임을 제공하는 단계와;상기 칩탑재판과 각 독립리드의 저면에 접착테이프를 부착시키는 단계와;상기 칩탑재판에 반도체 칩을 부착시키는 칩 부착 단계와;상기 반도체 칩의 본딩패드와 각 리드간 및 반도체 칩의 본딩패드와 각 독립리드간을 연결하는 와이어 본딩 단계와;상기 반도체 칩과 각 리드, 각 독립리드, 와이어를 몰딩수지로 몰딩하되, 상기 칩탑재판의 저면과 각 독립리드의 저면이 외부로 노출되게 몰딩하는 단계와;상기 칩탑재판과 각 독립리드의 저면에 부착되어 있던 접착테이프를 떼어내어, 칩탑재판과 각 독립리드의 저면을 외부로 노출시키는 단계와;외부로 노출된 각 독립리드에 별도의 인출단자를 부착시키는 단계와;상기 몰딩수지면의 측단부로 돌출된 각 리드를 포밍 및 트리밍하는 단계를 포함하여 이루어지는 것을 특징으로 하는 반도체 패키지 제조 방법.
- 청구항 5의 반도체 패키지 제조 방법에 의하여 제조된 반도체 패키지.
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KR1020050110476A KR100649870B1 (ko) | 2005-11-18 | 2005-11-18 | 반도체 패키지 제조용 리드프레임과, 이것을 이용한 반도체패키지 및 그 제조 방법 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990024253U (ko) * | 1997-12-12 | 1999-07-05 | 김영환 | 리드 프레임 |
JP2001015671A (ja) | 1999-06-29 | 2001-01-19 | Mitsui High Tec Inc | リードフレームの製造方法 |
JP2005303169A (ja) | 2004-04-15 | 2005-10-27 | Renesas Technology Corp | 半導体装置およびその製造方法 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990024253U (ko) * | 1997-12-12 | 1999-07-05 | 김영환 | 리드 프레임 |
JP2001015671A (ja) | 1999-06-29 | 2001-01-19 | Mitsui High Tec Inc | リードフレームの製造方法 |
JP2005303169A (ja) | 2004-04-15 | 2005-10-27 | Renesas Technology Corp | 半導体装置およびその製造方法 |
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