KR100626600B1 - 액정 표시 장치용 어레이 기판 및 그 제조 방법 - Google Patents
액정 표시 장치용 어레이 기판 및 그 제조 방법 Download PDFInfo
- Publication number
- KR100626600B1 KR100626600B1 KR1020000044917A KR20000044917A KR100626600B1 KR 100626600 B1 KR100626600 B1 KR 100626600B1 KR 1020000044917 A KR1020000044917 A KR 1020000044917A KR 20000044917 A KR20000044917 A KR 20000044917A KR 100626600 B1 KR100626600 B1 KR 100626600B1
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- wiring
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- dummy metal
- insulating film
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- 239000000758 substrate Substances 0.000 title claims abstract description 46
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000010410 layer Substances 0.000 claims abstract description 103
- 229910052751 metal Inorganic materials 0.000 claims abstract description 42
- 239000002184 metal Substances 0.000 claims abstract description 42
- 239000004065 semiconductor Substances 0.000 claims abstract description 31
- 239000011241 protective layer Substances 0.000 claims abstract description 21
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims 2
- 239000010408 film Substances 0.000 description 16
- 239000012535 impurity Substances 0.000 description 11
- 238000003860 storage Methods 0.000 description 9
- 239000010409 thin film Substances 0.000 description 8
- 239000004020 conductor Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
- G02F1/136263—Line defects
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (4)
- 기판과,상기 기판 위에 일 방향으로 연장 형성된 제1 배선과,상기 제1 배선을 덮으며 형성된 제1 절연막과,상기 제1 절연막 상부에 형성되어 있는 반도체층과,상기 반도체층 상부로 상기 제1 배선과 교차하여 화소영역을 정의하며 형성된 제2 배선과,상기 반도체층 상부로 상기 제1 배선과 중첩하며, 상기 제2 배선을 중심으로 이격하여 서로 마주하며 형성된 제1 및 제2 더미 금속층과,상기 제2 배선을 덮으며 연장되어 상기 제1 및 제2 더미 금속층을 덮으며 형성된 제2 절연막과,상기 화소영역에 형성된 화소 전극을 포함하며, 상기 반도체층과 상기 제2 절연막은 같은 모양을 가지는 액정 표시 장치용 어레이 기판.
- 청구항 1에 있어서,상기 제1 및 제2 더미 금속층은 상기 제2 배선과 같은 물질로 이루어진 액정 표시 장치용 어레이 기판.
- 청구항 1에 있어서,상기 제1 및 제2 배선과 전기적으로 연결되어 있으며, 신호를 전달하는 스위칭 소자를 더 포함하는 액정 표시 장치용 어레이 기판.
- 기판 상에 일 방향을 가지는 제1 배선을 형성하는 단계,상기 제1 배선 상부에 제1 절연막과 비정질 실리콘층 및 금속층을 연속하여 증착하는 단계,상기 금속층을 패터닝하여 상기 제1 배선과 교차하는 제2 배선 및 상기 제1 배선 상부에 위치하는 제1 및 제2 더미 금속층을 형성하는 단계,상기 제2 배선과 상기 제1 및 제2 더미 금속층을 포함하는 상부에 제2 절연막을 증착하는 단계,상기 제2 절연막과 상기 비정질 실리콘층을 패터닝하여 상기 제2 배선을 덮으며 연장되어 상기 제1 및 제2 더미 금속층을 덮는 보호층 및 상기 보호층과 같은 모양을 가지는 반도체층을 형성하는 단계,상기 제1 및 제2 배선이 교차하여 정의되는 영역에 화소 전극을 형성하는 단계를 포함하는 액정 표시 장치용 어레이 기판의 제조 방법.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020000044917A KR100626600B1 (ko) | 2000-08-02 | 2000-08-02 | 액정 표시 장치용 어레이 기판 및 그 제조 방법 |
US09/917,861 US6906760B2 (en) | 2000-08-02 | 2001-07-31 | Array substrate for a liquid crystal display and method for fabricating thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020000044917A KR100626600B1 (ko) | 2000-08-02 | 2000-08-02 | 액정 표시 장치용 어레이 기판 및 그 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020011574A KR20020011574A (ko) | 2002-02-09 |
KR100626600B1 true KR100626600B1 (ko) | 2006-09-22 |
Family
ID=19681495
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020000044917A Expired - Lifetime KR100626600B1 (ko) | 2000-08-02 | 2000-08-02 | 액정 표시 장치용 어레이 기판 및 그 제조 방법 |
Country Status (2)
Country | Link |
---|---|
US (1) | US6906760B2 (ko) |
KR (1) | KR100626600B1 (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100393044B1 (ko) * | 2000-11-14 | 2003-07-31 | 삼성에스디아이 주식회사 | 배선 전극 단선 방지용 보상 전극 패턴을 채용한 터치 패널 |
KR101208724B1 (ko) * | 2005-01-03 | 2012-12-06 | 삼성디스플레이 주식회사 | 어레이 기판 및 이를 구비한 표시 패널 |
US7796223B2 (en) * | 2005-03-09 | 2010-09-14 | Samsung Electronics Co., Ltd. | Liquid crystal display apparatus having data lines with curved portions and method |
KR20060104707A (ko) * | 2005-03-31 | 2006-10-09 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 및 그 제조방법 |
US8253179B2 (en) * | 2005-05-13 | 2012-08-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
US7738050B2 (en) * | 2007-07-06 | 2010-06-15 | Semiconductor Energy Laboratory Co., Ltd | Liquid crystal display device |
CN112859466B (zh) * | 2019-11-28 | 2025-04-22 | 京东方科技集团股份有限公司 | 显示基板和显示面板 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2620240B2 (ja) * | 1987-06-10 | 1997-06-11 | 株式会社日立製作所 | 液晶表示装置 |
US6195140B1 (en) * | 1997-07-28 | 2001-02-27 | Sharp Kabushiki Kaisha | Liquid crystal display in which at least one pixel includes both a transmissive region and a reflective region |
KR100271037B1 (ko) * | 1997-09-05 | 2000-11-01 | 구본준, 론 위라하디락사 | 액정 표시 장치의 구조 및 그 액정 표시 장치의 제조 방법(liquid crystal display device and the method for manufacturing the same) |
-
2000
- 2000-08-02 KR KR1020000044917A patent/KR100626600B1/ko not_active Expired - Lifetime
-
2001
- 2001-07-31 US US09/917,861 patent/US6906760B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20020047948A1 (en) | 2002-04-25 |
KR20020011574A (ko) | 2002-02-09 |
US6906760B2 (en) | 2005-06-14 |
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