KR100611642B1 - Top-Emitt type nitride light emitting device and its manufacturing method - Google Patents

Abstract

The present invention relates to a top emitter nitride light emitting device and a method of manufacturing the same. In the top emitter nitride light emitting device, an n-type cladding layer, an active layer, and a p-type cladding layer are sequentially formed on a substrate, and a p-type cladding is provided. A multi-ohmic contact layer having at least one or more layers repeatedly laminated on the layer using a modified metal layer and at least one transparent conductive thin film layer as a repeating repeating unit, wherein the modified metal layer is added with tin (Sn) and tin (Sn) as main components. It is formed of either an alloy or a solid solution to which the element is added. According to the top-emitting nitride-based light emitting device, the ohmic contact property with the p-type cladding layer is improved to provide excellent current-voltage characteristics as well as high light transmittance to increase the luminous efficiency of the device.

Description

Top-emitting nitride-based light emitting device and method for manufacturing the same

1 is a cross-sectional view showing a top-emitting nitride-based light emitting device according to a first embodiment of the present invention,

2 is a cross-sectional view showing a top-emitting nitride-based light emitting device according to a second embodiment of the present invention.

3 is a cross-sectional view showing a top-emitting nitride light emitting device according to a third embodiment of the present invention.

FIG. 4 is a graph showing the results of measuring current-voltage characteristics of a p-type electrode structure in which a silver alloy containing 3.5% of tin and ITO are sequentially stacked;

FIG. 5 is a graph showing the results of measuring current-voltage characteristics of a light emitting device to which a p-type electrode structure in which 3.5% of silver is added and an ITO is sequentially stacked.

<Description of Symbols for Main Parts of Drawings>

110: substrate 150: P-type cladding layer

160a: first modified metal layer 160b: first transparent conductive thin film layer

160c: second modified metal layer 160d: second transparent conductive thin film layer

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a top emitter nitride light emitting device and a method of manufacturing the same, and more particularly, to a top emitter nitride light emitting device having improved ohmic characteristics and luminous efficiency and a method of manufacturing the same.

Currently, transparent conductive thin films are widely used in the optoelectronic field, the display field, and the energy industry.

In the field of light emitting devices, research is being actively conducted around the world to develop a transparent conductive ohmic electrode structure that functions as a smooth hole injection and a high efficiency light emission.

Currently, the most actively studied transparent conductive thin film materials are transparent conducting oxide (TCO) and transparent conducting nitride (TCN).

The transparent conductive oxide (TCO) includes indium oxide (In ₂ O ₃ ), tin oxide (SnO ₂ ), zinc oxide (ZnO), tin indium oxide (ITO), and the transparent conductive nitride (TCN) is titanium nitride (TiN). There is).

However, these materials have relatively large sheet resistance, high light reflectivity, and relatively small work function, so that the p-type of the top-emitted gallium nitride-based light emitting device alone There are problems that are difficult to apply as a transparent ohmic electrode.

If you describe the problem,

First, the transparent conductive thin films listed above are generally 100 Ω / □ values when forming thin films by PVD (Physical Vapor Deposition) method such as sputtering, e-beam or heat evaporator. Since it has a large sheet resistance close to it, not only makes it difficult to spread current in the horizontal direction (parallel to the interlayer interface) of the light emitting device, but also makes it difficult to smooth hole injection in the vertical direction. It is difficult to apply a high brightness light emitting device having a large area and a large capacity.

Second, the transparent conductive thin films listed above have high light reflection and absorption properties for the light emitted from the gallium nitride-based light emitting diodes, thereby reducing luminous efficiency.

Third, transparent conductive thin films, including tin indium oxide (ITO) and titanium nitride (TiN), have relatively small work function values, making it difficult to form ohmic contact by direct contact with p-type gallium nitride.

Finally, the transparent conductive oxide (TCO) is an insulating material due to the large oxidation of gallium (Ga) on the surface of gallium nitride in the thin film formation process when applied as an electrode in direct ohmic contact with a gallium nitride compound semiconductor. It is difficult to form a high quality ohmic contact electrode by causing gallium oxide (Ga ₂ O ₃ ) formation.

On the other hand, light emitting devices are classified into top-emitting light emitting diodes (TLEDs) and flip-chip light emitting diodes (FCLEDs).

Currently, a widely used top-emitting light emitting diode is configured to emit light through an ohmic contact layer in contact with a p-type cladding layer. However, in order to realize a high brightness top-emitting type light emitting diode, a high quality current spreading layer is absolutely required to compensate for the high surface resistance of the p-type cladding layer having a low hole concentration. Therefore, the current spreading thin film layer having low sheet resistance and high light transmittance may be formed as an ohmic contact layer to provide smooth hole injection, current spreading, and excellent light emission. It is required to be able.

As the top-emitting light emitting diode known to date, an ohmic contact layer in which a nickel (Ni) layer and a gold (Au) layer are sequentially formed on a p-type cladding layer is widely used.

The ohmic contact layer made of nickel-gold is known to have excellent specific contact resistance and translucency of about 10 ⁻³ to 10 ⁻⁴ μm ₂ by heat treatment in an oxygen (O ₂ ) atmosphere.

The conventional ohmic contact layer is a nickel oxide (p-type semiconductor oxide) at the interface between gallium nitride forming a p-type cladding layer and a nickel layer applied as an ohmic contact layer when heat-treated at a temperature of about 500 ° C. to 600 ° C. NiO) is formed between the upper and upper layers of the island (Auland) formed to reduce the Schottky barrier height (SBH), so that the multiple carriers near the surface of the p-type cladding layer A hole is easily supplied.

In addition, after the nickel-gold layer structure is formed on the p-type cladding layer, the heat treatment removes the Mg-H intermetallic compound to increase the magnesium dopant concentration on the gallium nitride surface through a reactivation process. It is understood that the effective carrier concentration on the surface of the p-type cladding layer is 10 ¹⁸ or more, resulting in tunneling conduction between the p-type cladding layer and the nickel contact layer containing nickel oxide, thereby exhibiting ohmic conductivity characteristics with low specific contact resistance. It is becoming.

However, the top-emitting light emitting diode using a semi-transparent ohmic contact layer formed of a nickel-gold structure contains gold (Au), which hinders the light transmittance, thereby realizing next-generation high-capacity and high brightness light emitting devices due to low luminous efficiency. There is a limit to this.

In addition, by applying a p-type reflective film ohmic electrode to increase the light emission efficiency of light to emit light through the sapphire transparent substrate Although flip chip light emitting diode structures have been developed and studied, high quality flip chip type light emitting diodes have not been realized due to the absence of electrically, mechanically and thermally stable p-type reflective film ohmic electrodes.

In order to overcome the limitations of the device of the top-emit type and flip chip type light emitting diodes, gold (Au) may be formed to have superior light transmittance than the conventional semi-transparent nickel (oxide) -gold layer structure used as a p-type ohmic contact layer. The literature on the use of completely excluded transparent conductive oxides, such as ITO, [IEEE PTL, YC Lin, etc. Vol. 14, 1668, IEEE PTL, Shyi-Ming Pan, etc Vol. 15, 646]. Recently, ITO ohmic contact layer was used to implement a top-emitting light emitting diode which exhibits an improved output power compared to the conventional nickel-gold structure. Sci. Technol., CS Chang, etc. 18 (2003), L21. However, while the ohmic contact layer having such a structure can increase the luminous efficiency of the light emitting device, it still has a problem of exhibiting a relatively high operating voltage, and thus has many limitations in application to a large area and a high-brightness light emitting device. . On the other hand, U.S. Patent No. 6,287,947 discloses a method of fabricating a light emitting diode in which an oxidized thin nickel-gold or nickel-silver structure is combined with indium tin oxide (ITO) to improve light transmission and electrical properties. have. However, the proposed method is complicated to form an ohmic contact electrode, and the ohmic electrode formed of oxides of group 2 elements on the transition metal or elemental periodic table including nickel metal has a high sheet resistance, thereby providing a highly efficient light emitting device. I have a problem that is difficult to implement.

In addition, oxidized transition metals, including nickel, have the disadvantage of falling to transmit light.

As described above, there are many difficulties in developing a high quality p-type ohmic electrode having excellent electrical and optical properties, and the root cause thereof can be summarized as follows.

First, at least a low hole concentration of the p-type gallium nitride and This 10 ⁴ Ω / □ A point with a high sheet resistance,

Second, high Schottky barrier height and width at the interface between p-type gallium nitride and the electrode due to the absence of a highly transparent electrode material having a relatively high work function value compared to the work function value of p-type gallium nitride ( width) is formed, which makes it difficult to inject holes smoothly in the vertical direction,

Third, most materials are inversely proportional to electrical and optical properties, and therefore, transparent electrodes with high light transmittance generally have large sheet resistance, so that current spreading in the horizontal direction is reduced. The sharp drop and

Fourth, in the process of directly depositing the transparent conductive thin film layer on the p-type gallium nitride, there is a point that the electrical characteristics of the light emitting device is degraded due to the gallium oxide (Ga ₂ O ₃ ) is formed on the gallium nitride surface.

The present invention has been made to solve the above problems, and provides a top-emitting nitride-based light emitting device having a high quality ohmic contact electrode structure having high light transmittance and low sheet resistance, and a method of manufacturing the same. have.

In order to achieve the above object, the top-emitting nitride light emitting device according to the present invention is a top-emitting nitride light emitting device having an active layer between an n-type cladding layer and a p-type cladding layer, wherein the p-type cladding And a multi-ohmic contact layer in which at least one group is repeatedly stacked by using a modified metal layer and at least one transparent conductive thin film layer on a layer as a repeating unit, wherein the modified metal layer includes tin (Sn) and tin (Sn) as main components. Thus, the additive element is formed of either an added alloy or a solid solution.

Additional elements added to tin as the material applied to the modified metal layer are indium (In), zinc (Zn), gallium (Ga), cadmium (Cd), magnesium (Mg), beryllium (Be), silver (Ag), Molybdenum (Mo), Vanadium (V), Copper (Cu), Iridium (Ir), Rhodium (Rh), Ruthenium (Ru), Tungsten (W), Cobalt (Co), Nickel (Ni), Manganese (Mn) , At least one selected from the group consisting of palladium (Pd), platinum (Pt), and lanthanum (La) element-based metals.

The addition ratio of the additive element added to the tin is preferably applied at 0.001 to 50 weight percent.

In addition, the modified metal layer is formed to a thickness of 0.1 nanometer to 100 nanometers.

In addition, the transparent conductive thin film layer is formed of any one of a transparent conductive oxide (TCO) and a transparent conductive nitride (TCN), the transparent conductive oxide is indium (In), tin (Sn), zinc (Zn), gallium (Ga) , Cadmium (Cd), magnesium (Mg), beryllium (Be), silver (Ag), molybdenum (Mo), vanadium (V), copper (Cu), iridium (Ir), rhodium (Rh), ruthenium (Ru ), At least one selected from tungsten (W), cobalt (Co), nickel (Ni), manganese (Mn), palladium (Pd), platinum (Pt), and lanthanum (La) element-based metals and oxygen ( O) is formed by bonding, the transparent conductive nitride is formed by containing titanium (Ti) and nitrogen (N).

The transparent conductive thin film layer is preferably formed to a thickness of 10 nanometers to 1000 nanometers.

In addition, in order to achieve the above object, the manufacturing method of the top emitter nitride light emitting device according to the present invention is a manufacturing method of the top emitter nitride light emitting device having an active layer between the n-type cladding layer and the p-type cladding layer. In the following: At least one or more groups are laminated on the p-type cladding layer of the light emitting structure in which an n-type cladding layer, an active layer, and a p-type cladding layer are sequentially stacked on the substrate, using a modified metal layer and at least one transparent conductive thin film layer as a stacking repeating unit. Forming an ohmic contact layer; I. And heat-treating the structure that has undergone the temporary step; wherein the modified metal layer is formed of tin, tin, or any one of an alloy or a solid solution to which an additive element is added.

The heat treatment step is preferably performed for 10 seconds to 3 hours in the range of room temperature to 800 degrees.

In addition, the heat treatment step is performed in a gas atmosphere containing at least one of nitrogen, argon, helium, oxygen, hydrogen, air, vacuum in the reactor in which the light emitting device in which the p-type electrode structure is formed.

Hereinafter, with reference to the accompanying drawings will be described in more detail the top-emitting nitride-based light emitting device and its manufacturing method according to a preferred embodiment of the present invention.

1 is a cross-sectional view showing a top-emitting light emitting device according to a first embodiment of the present invention.

Referring to the drawings, the top-emitting light emitting device includes a substrate 110, a buffer layer 120, an n-type cladding layer 130, an active layer 140, a p-type cladding layer 150, a multi-ohmic contact layer 160 This structure is laminated sequentially. Reference numeral 180 denotes a p-type electrode pad, and 190 denotes an n-type electrode pad.

The substrate 110 to the p-type cladding layer 150 correspond to the light emitting structure, and the multi-ohmic contact layer 160 stacked on the p-type cladding layer 150 corresponds to the p-type electrode structure.

The substrate 110 may be formed of any one of sapphire (Al ₂ O ₃ ), silicon carbide (SiC), silicon (Si), and gallium arsenide (GaAs).

The buffer layer 120 may be omitted.

Each layer from the buffer layer 120 to the p-type cladding layer 150 is Al _x In _y Ga _z N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1, which is a general formula of a group III nitride compound). , Based on any compound selected from the compounds represented by 0 ≦ x + y + z ≦ 1), and the dopant is added to the n-type cladding layer 130 and the p-type cladding layer 150.

In addition, the active layer 140 may be configured in various known manners, such as a monolayer or an MQW layer.

As an example, when a gallium nitride (GaN) -based compound is applied, the buffer layer 120 is formed of GaN, and the n-type cladding layer 130 is formed of Si, Ge, Se, Te, or the like as n-type dopants to GaN. The active layer 140 is formed of InGaN / GaN MQW or AlGaN / GaN MQW, and the p-type cladding layer 150 is formed by adding Mg, Zn, Ca, Sr, Ba, etc. to GaN as a p-type dopant. .

An n-type ohmic contact layer (not shown) may be interposed between the n-type cladding layer 130 and the n-type electrode pad 190, and in the n-type ohmic contact layer, titanium (Ti) and aluminum (Al) may be sequentially formed. Various known structures, such as laminated layer structure, can be applied.

The p-type electrode pad 180 may have a layer structure in which nickel (Ni) / gold (Au) or silver (Ag) / gold (Au) is sequentially stacked.

Each layer is formed by an e-beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), dual-type thermal evaporator, or sputtering ( What is necessary is just to form by well-known vapor deposition methods, such as sputtering).

The multi-ohmic contact layer 160 has a structure in which the modified metal layer 160a and the transparent conductive thin film layer 160b are sequentially stacked.

The modified metal layer 160a is easily oxidized and decomposed into conductive nanophase particles when thermally treated at a temperature of 700 ° C. or lower and an oxygen atmosphere, and is a natural oxide layer thinly formed on the p-type cladding layer 150 (Ga _2). O ₃ ) applies a material that can be reduced or changed to a conductive oxide.

The material of the modified metal layer 160a that satisfies these conditions is formed of an alloy or a solid solution to which an additive element is added based on tin (Sn) or tin.

Additional elements added to tin are indium (In), zinc (Zn), gallium (Ga), cadmium (Cd), magnesium (Mg) and beryllium (Be), which can form ohmic contact with the p-type cladding layer 150. ), Silver (Ag), molybdenum (Mo), vanadium (V), copper (Cu), iridium (Ir), rhodium (Rh), ruthenium (Ru), tungsten (W), cobalt (Co), nickel ( At least one selected from Ni), manganese (Mn), palladium (Pd), platinum (Pt), and lanthanum (La) element-based metals is applied.

The amount of added element added to tin is preferably applied at 0.1 to 50 weight percent. The weight percentage here refers to the weight ratio between the materials added.

In addition, the modified metal layer 160a is preferably formed to a thickness of 0.1 nanometer 10 nanometers, which is a thickness that can be easily decomposed into conductive nano-phase particles during the heat treatment.

The transparent conductive thin film layer 160b is formed on the modified metal layer 160a.

The transparent conductive thin film layer 160b is applied to either a transparent conductive oxide (TCO) or a transparent conductive nitride (TCN).

Transparent conductive oxides (TCO) are indium (In), tin (Sn), zinc (Zn), gallium (Ga), cadmium (Cd), magnesium (Mg), beryllium (Be), silver (Ag), molybdenum (Mo) ), Vanadium (V), copper (Cu), iridium (Ir), rhodium (Rh), ruthenium (Ru), tungsten (W), cobalt (Co), nickel (Ni), manganese (Mn), palladium ( Pd), platinum (Pt), lanthanum (La) element-based metals preferably formed of at least one or more components and oxygen (O) is preferably applied.

The material for the transparent conductive oxide may be selected in consideration of a work function value and sheet resistance value.

The transparent conductive nitride (TN) is preferably formed of titanium (Ti) and nitrogen (N) having low sheet resistance and high light transmittance.

In addition, the transparent conductive oxide (TCO) and the transparent conductive nitride (TCN) applied to the transparent conductive thin film layer 160b may add at least one or more of the metal components on the periodic table of the elements to the dopant to improve electrical properties with respect to the main component. Can be.

Herein, the addition ratio of the dopant added in order to have appropriate electrical properties to the transparent conductive oxide (TCO) and the transparent conductive nitride (TCN) is preferably applied within the range of 0.001 to 20 weight percent.

In addition, the thickness of the transparent conductive thin film layer 160b is preferably formed to a thickness of 10 nanometers to 1000 nanometers to have a suitable light transmittance and electrical conductivity.

The multi-ohmic contact layer 160, the modified metal layer 160a and the transparent conductive thin film layer 160b, the n-type cladding layer 130, the active layer 140 and the p-type cladding layer 150 sequentially on the substrate 110 The p-type cladding layer 150 of the stacked light emitting structure may be sequentially formed of the materials described above.

The multi-ohmic contact layer 160 may be formed of any one of an electron beam evaporator, a thermal evaporator, a sputtering deposition, and a pulsed laser deposition.

In addition, the deposition temperature applied to form the multi-ohmic contact layer 160 is in the range of 20 ℃ to 1500 ℃, the pressure in the deposition machine is carried out at atmospheric pressure to about 10 ^-12 Torr.

In addition, after the multi-ohmic contact layer 160 is formed, it is preferable to undergo an annealing process.

Annealing is performed at a temperature in the reactor at 100 ° C to 800 ° C for 10 seconds to 3 hours in a vacuum or various gas atmospheres.

At least one gas of nitrogen, argon, helium, oxygen, hydrogen, or air may be applied to the gas introduced into the reactor during the heat treatment.

On the other hand, the multi-omic contact layer 160 may be formed by repeatedly stacked on the basis of the modified metal layer (160a) / at least one transparent conductive thin film layer (160b).

An example of such a repeating laminated structure is shown in FIG. Elements having the same function as in the drawing shown in FIG. 1 are denoted by the same reference numerals.

Referring to FIG. 2, the multi-ohmic contact layer 160 includes a first modified metal layer 160a / a first transparent conductive thin film layer 160b / a second modified metal layer 160c / a second transparent conductive thin film layer 160d in sequence. It is laminated and formed.

The first modified metal layer 160a is formed of an element selected from tin, tin alloy, or solid solution, which is the material described above.

The second modified metal layer 160c receives oxygen from the first transparent conductive thin film layer 160b or the second transparent conductive thin film layer 160d to be formed through a post-process during heat treatment, so that the second modified metal layer 160c is transparent conductive oxide. At the same time, the thin film layer is formed of an element selected from tin, tin alloy, or solid solution, which is the material described above, which can further increase the carrier concentration of the first and second transparent conductive thin film layers 160b and 160d.

The material applied to the second modified metal layer 160c may be the same as or different from that of the first modified metal layer 160a in order to reduce sheet resistance.

Each of the first and second modified metal layers 160a and 160c is preferably formed to a thickness of 0.1 nanometer 100 nanometer, which is a thickness that can be easily decomposed into a transparent conductive nanophase oxide during heat treatment.

In addition, the first transparent conductive thin film layer 160b and the second transparent conductive thin film layer 160d are also formed of the transparent conductive material described above, in order to lower the sheet resistance, the components of the first transparent conductive thin film layer 160b and the second transparent conductive thin film layer ( The components of 160d) may be the same or different from each other.

As described above, each of the first transparent conductive thin film layer 160b and the second transparent conductive thin film layer 160d is formed to a thickness of 10 nanometers to 1000 nanometers.

The light emitting device may be formed of the material described above on the p-type cladding layer 150 of the light emitting structure in which the n-type cladding layer 130, the active layer 140, and the p-type cladding layer 150 are sequentially stacked on the substrate 110. The first modified metal layer 160a, the first transparent conductive thin film layer 160b, the second modified metal layer 160c, and the second transparent conductive thin film layer 160d are sequentially deposited by the above-described deposition method to form the p-type electrode structure. After forming, heat treatment may be performed.

Meanwhile, a light emitting device to which another p-type electrode structure is applied is shown in FIG. 3. Elements having the same function as in the above-described drawings are denoted by the same reference numerals.

Referring to FIG. 3, the multi-ohmic contact layer 160 is formed by sequentially stacking the first modified metal layer 160a / the first transparent conductive thin film layer 160b / the second transparent conductive thin film layer 160d.

The stacked repeating unit may be the first modified metal layer 160a / the first transparent conductive thin film layer 160b / the second transparent conductive thin film layer 160d.

In the p-type electrode structure having the above structure, the first modified metal layer 160a / the first transparent conductive thin film layer 160b / the second transparent conductive thin film layer 160d may be formed by the materials and methods described above.

4 illustrates a modified metal layer 160a formed by adding 3% of silver (Ag) to tin (Sn) on a p-type cladding layer 150 and a 200 nm thick transparent conductive thin film layer 160b. Figure 1 shows the results of measuring the current-voltage characteristics of the p-type electrode structure fabricated by forming a heat treatment at 600 ℃ after forming.

Each graph marked with different marks in the drawings is measured at different inter-electrode distances for the fabricated p-type electrode structure. These results show that the current-voltage relationship follows Ohm's law. That is, as can be seen through FIG. 4, the p-type electrode structure according to the present invention shows a linear current-voltage characteristic indicating ohmic contact.

5 is a transparent conductive layer of 200 nanometers of ITO and a modified metal layer 160a formed of 3 nanometers by adding 3.5% of silver (Ag) to tin (Sn) on the p-type cladding layer 150 of the light emitting structure. After forming the thin film layer 160b and the heat treatment at 600 ℃ is a diagram showing the results of measuring the current-voltage characteristics of the light emitting device manufactured.

As can be seen from FIG. 5, a low operating voltage of less than 3.4V is provided at a 20mA injection current.

As described so far, according to the top-emitted nitride light emitting device according to the present invention and a method of manufacturing the same, the ohmic contact property with the p-type cladding layer is improved, thereby not only showing excellent current-voltage characteristics but also high light. The luminous efficiency of the device can be improved by providing transparency.

Claims (10)

delete In a top-emit type nitride light emitting device having an active layer between an n-type cladding layer and a p-type cladding layer, And a multi-ohmic contact layer including a modified metal layer on the p-type cladding layer and a transparent conductive thin film layer formed on the modified metal layer. The modified metal layer is formed of any one of an alloy or a solid solution to which an additive element is added with tin (Sn) and tin (Sn) as main components, Additional elements added to tin as the material applied to the modified metal layer are indium (In), zinc (Zn), gallium (Ga), cadmium (Cd), magnesium (Mg), beryllium (Be), silver (Ag), Molybdenum (Mo), Vanadium (V), Copper (Cu), Iridium (Ir), Rhodium (Rh), Ruthenium (Ru), Tungsten (W), Cobalt (Co), Nickel (Ni), Manganese (Mn) And at least one selected from palladium (Pd), platinum (Pt), and lanthanum (La) element-based metals. The method of claim 2, A top emission type nitride-based light emitting device, characterized in that the addition ratio of the added element to the tin is 0.001 to 50 weight percent. delete delete delete In the manufacturing method of the top-emit type nitride light emitting device having an active layer between the n-type cladding layer and the p-type cladding layer, end. Forming a multi-ohmic contact layer by laminating a transparent conductive thin film layer on the modified metal layer and the modified metal layer on the p-type cladding layer of the light emitting structure in which an n-type cladding layer, an active layer and a p-type cladding layer are sequentially stacked on a substrate; I. And heat-treating the structure that has undergone the temporary step. The modified metal layer is formed of tin, tin, or any one of an alloy or a solid solution to which an additive element is added, Additional elements added to tin as the material applied to the modified metal layer are indium (In), zinc (Zn), gallium (Ga), cadmium (Cd), magnesium (Mg), beryllium (Be), silver (Ag), Molybdenum (Mo), Vanadium (V), Copper (Cu), Iridium (Ir), Rhodium (Rh), Ruthenium (Ru), Tungsten (W), Cobalt (Co), Nickel (Ni), Manganese (Mn) And palladium (Pd), platinum (Pt), and lanthanum (La) element-based metals. The method of claim 7, wherein The transparent conductive thin film layer is formed of any one of a transparent conductive oxide (TCO) and a transparent conductive nitride (TCN), The transparent conductive oxide may be indium (In), tin (Sn), zinc (Zn), gallium (Ga), cadmium (Cd), magnesium (Mg), beryllium (Be), silver (Ag), molybdenum (Mo), Vanadium (V), Copper (Cu), Iridium (Ir), Rhodium (Rh), Ruthenium (Ru), Tungsten (W), Cobalt (Co), Nickel (Ni), Manganese (Mn), Palladium (Pd) At least one component selected from platinum (Pt) and lanthanum (La) -based metals and oxygen (O) formed therein; The transparent conductive nitride is a method of manufacturing a top-emitting nitride-based light emitting device, characterized in that formed containing titanium (Ti) and nitrogen (N). The method of claim 7, wherein the modified metal layer is formed in a thickness of 0.1 nanometer to 100 nanometers. The method of claim 7, wherein the transparent conductive thin film layer has a thickness of about 10 nanometers to about 1000 nanometers.

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