KR100601971B1 - Top emitting light emitting device and method of manufacturing thereof - Google Patents

Abstract

The present invention relates to a top-emitting nitride-based light emitting device and a method for manufacturing the same, wherein the top-emitting nitride-based light emitting device includes a substrate, an n-type cladding layer, an active layer, a p-type cladding layer, and a multi-ohmic contact layer sequentially stacked. The multi-ohmic contact layer is repeatedly laminated with at least one group or more on the basis of the modified metal layer / transparent conductive thin film layer, and the modified metal layer is formed mainly of silver. According to the top-emitting nitride-based light emitting device and a method of manufacturing the same, the ohmic contact property with the p-type cladding layer is improved, thereby not only showing excellent current-voltage characteristics, but also providing high light transmittance to increase the luminous efficiency of the device. have.

Description

Top-emitting nitride-based light emitting device and method for manufacturing the same

1 is a cross-sectional view illustrating a top emission type light emitting device to which a multi-ohmic contact layer according to a first exemplary embodiment of the present invention is applied.

2 is a graph showing the result of measuring the light transmittance of the light emitting device according to the first embodiment of the present invention compared with a single transparent electrode layer.

3 is a graph showing a result of measuring the current-voltage characteristics of the light emitting device according to the first embodiment of the present invention compared with the case of applying gold.

4 is a cross-sectional view illustrating a top emission type light emitting device to which a multi-ohmic contact layer according to a second exemplary embodiment of the present invention is applied.

5 is a cross-sectional view illustrating a top emission light emitting device to which a multi-ohmic contact layer according to a third exemplary embodiment of the present invention is applied.

6A is a graph illustrating a result of measuring current-voltage characteristics of a light emitting device according to a third exemplary embodiment of the present invention.

6B is a graph illustrating a result of measuring light transmittance of a light emitting device according to a third exemplary embodiment of the present invention.

<Description of Symbols for Main Parts of Drawings>

110: substrate 150: P-type cladding layer

160: multi-ohmic contact layer 160a, 160c: modified metal layer

160b, 160d: transparent conductive thin film layer 160e: metal insertion layer

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a top emitter nitride light emitting device and a method of manufacturing the same, and more particularly, to a top emitter nitride light emitting device having improved ohmic characteristics and luminous efficiency and a method of manufacturing the same.

Currently, transparent conductive thin films are widely used in the optoelectronic field, the display field, and the energy industry.

In the field of light emitting devices, researches are being actively conducted to develop transparent conductive thin film electrodes which play a role of smooth hole injection and high efficiency light emission.

Transparent conductive thin film materials currently being actively studied include transparent conducting oxide (TCO) and transparent conducting nitride (TCN).

Transparent conductive oxides include indium oxide (In ₂ O ₃ ), tin oxide (SnO ₂ ), zinc oxide (ZnO), tin indium oxide (ITO), and the like, and titanium nitride (TiN) as the transparent conductive nitride.

However, these materials have relatively large sheet resistance, high light reflectivity, and relatively small work function, so that they alone are p-type transparent materials of top-emitted gallium nitride-based light emitting devices. There are problems that are difficult to apply as an electrode.

To describe the problem, first, the transparent conductive thin films listed above are generally 100 Ω / □ values when forming thin films by PVD methods such as sputtering, e-beam or heat evaporator, etc. Since it has a large sheet resistance value close to, not only makes it difficult to spread current in the horizontal direction (parallel with the interlayer interface) of the light emitting device, but also makes smooth hole injection in the vertical direction difficult, It is difficult to apply to implement a large area and a high-brightness light emitting device of a large capacity.

Second, the above-mentioned transparent conductive thin films have high light reflectivity with respect to the light emitted from the gallium nitride-based light emitting diodes, thereby reducing luminous efficiency.

Third, transparent conductive thin films, such as tin indium oxide (ITO) and titanium nitride (TiN), have relatively small work function values, making it difficult to form ohmic contact by direct contact with p-type gallium nitride.

Finally, transparent conductive oxide (TCO) is a gallium oxide (Ga) oxide insulating material due to the large oxidation ability of gallium on the gallium nitride surface in the thin film formation process when applied as an electrode in direct ohmic contact with gallium nitride compound semiconductor ₂ O ₃ ) It is difficult to form a good ohmic contact electrode by causing the production.

Meanwhile, in order to implement light emitting devices such as light emitting diodes (LEDs) and laser diodes (LDs) using gallium nitride compound semiconductors, an electrode structure for forming ohmic contact between the semiconductor and the electrodes is very important.

Such gallium nitride-based light emitting devices are classified into top-emitting light emitting diodes (TLEDS) and flip-chip light emitting diodes (FCLEDS).

Top emitter light emitting diodes, which are currently widely used, are formed to emit light through an ohmic contact layer in contact with a p-type cladding layer. In addition, in order to realize a high brightness top-emitting type light emitting diode, a current spreading layer, which is a high-quality ohmic contact layer to compensate for the high sheet resistance of the p-type cladding layer having a low hole concentration, is absolutely necessary. Do. Therefore, it is required to form a current spreading thin film layer having a low sheet resistance value and high light transmittance to provide smooth hole injection, current spreading, and excellent light emission. .

The top-emitting light emitting diodes known to date have a structure in which a nickel (Ni) layer and a gold (Au) layer are sequentially stacked on a p-type cladding layer.

The nickel / gold layer is known to be heat-treated in an oxygen (O ₂ ) atmosphere to form a semi-transparent ohmic contact layer having excellent specific contact resistance of about 10 ⁻³ to 10 ⁻⁴ Ω cm ² .

The low specific contact resistance of the semi-transparent ohmic contact layer is a p-type semiconductor oxide at the interface between gallium nitride forming a p-type cladding layer and a nickel layer applied as an ohmic contact layer when subjected to heat treatment at an temperature of about 500 ° C. to 600 ° C. Nickel oxide (NiO) is formed between the Au layer formed in an island shape and on the upper layer to reduce the Schottky barrier height (SBH), so that it is near the surface of the p-type cladding layer. A hole, which is a multiple carrier, is easily supplied.

In addition, after the nickel / gold layer is formed on the p-type cladding layer, the heat treatment removes the Mg-H intermetallic compound to increase the magnesium dopant concentration on the gallium nitride surface. It is understood that the effective carrier concentration on the surface of the cladding layer is 10 ¹⁸ or more, resulting in tunneling conduction between the p-type cladding layer and the ohmic contact layer containing nickel oxide, thereby exhibiting ohmic conductivity characteristics with low specific contact resistance. .

However, the top-emitting light emitting diode using a semi-transparent thin film electrode formed of nickel / gold contains gold (Au), which hinders light transmittance. Revealing.

In addition, in order to increase the emission of heat generated during the operation of the light emitting diodes and to increase the light emitting efficiency of the light, by applying a reflective layer to emit light through the sapphire transparent substrate Even flip-chip LED structures have many problems, such as high resistance due to oxidation and poor adhesion of the reflective layer.

Therefore, in order to overcome the limitations of the devices of the top-emit type and flip chip light emitting diodes, gold (Au) is completely made to have better light transmittance than the conventional translucent nickel / gold structure used as a p-type ohmic contact layer. Research on the use of excluded transparent conductive oxides, such as ITO, has been described in various ways [IEEE PTL, YC Lin, etc.]. Vol. 14, 1668, IEEE PTL, Shyi-Ming Pan, etc Vol. 15, 646]. Recently, ITO ohmic contact layer was used to implement a top-emitting type light emitting diode which exhibits an improved output power compared to a conventional nickel / gold structure [Semicond. Sci. Technol., C S Chang, etc 18 (2003), L21. However, while the ohmic contact layer having such a structure can increase the output of the light emitting device, it has a problem of exhibiting a relatively high operating voltage, and thus has many limitations in application to a high area and a high-brightness light emitting device. On the other hand, Lumieds Lighting of the United States manufactures light emitting diodes with high light transmittance and excellent electrical properties through the grafting of oxidized thin Ni / Au or Ni / Ag structures with indium tin oxide (ITO). (Michael J. Ludowise etc., US patent 6,287,947). However, these processes have a high surface resistance because of the complex ohmic contact electrode formation process and the ohmic electrode formed of oxides of group 2 elements on the transition table or elemental periodic table including nickel metal (Ni). It is difficult to implement a light emitting device. Oxidized metals, including nickel (Ni), are also known to be difficult to have high light transmittance.

As such, it is difficult to develop a transparent electrode that forms a good ohmic contact. The root cause thereof can be summarized as follows.

First, the low hole concentration of p-type gallium nitride, which leads to more than 10 ⁴ Ω / □ Point with high sheet resistance,

Second, a high Schottky barrier is formed at the interface between the p-type gallium nitride and the electrode due to the absence of a transparent electrode material having a larger work function than the work function value of the p-type gallium nitride. It is difficult to inject a hole smoothly into

Third, most materials are inversely proportional to electrical and optical properties, and therefore, transparent electrodes with high light transmittance generally have large sheet resistance, so that current spreading in the horizontal direction is reduced. The sharp drop and

Fourth, in the process of directly depositing the transparent conductive oxide on the p-type gallium nitride, the electrical properties of the light emitting device is poor due to the generation of gallium oxide (Ga ₂ O ₃ ) insulating on the gallium nitride surface.

In addition, due to the above-mentioned problems, heat generation is increased between the p-type gallium nitride and the transparent electrode, thereby shortening the life of the device and making it difficult to secure reliability in operation.

 SUMMARY OF THE INVENTION The present invention has been made to improve the above problems, and an object thereof is to provide a top-emitting nitride-based light emitting device having an electrode structure having high light transmittance and low sheet resistance and a method of manufacturing the same.

In order to achieve the above object, the top-emitting nitride light emitting device according to the present invention is a top-emitting nitride-based light emitting device having an active layer between an n-type cladding layer and a p-type cladding layer, wherein the p-type cladding layer And a multi-ohmic contact layer in which at least one or more pairs are repeatedly stacked using a modified metal layer / transparent conductive thin film layer as a stacked repeating unit, wherein the modified metal layer is formed of silver (Ag) as a main component.

Preferably, the transparent conductive thin film layer is indium (In), tin (Sn), zinc (Zn), gallium (Ga), cadmium (Cd), magnesium (Mg), beryllium (Be), silver (Ag), molybdenum ( Mo), vanadium (V), copper (Cu), iridium (Ir), rhodium (Rh), ruthenium (Ru), tungsten (W), cobalt (Co), nickel (Ni), manganese (Mn), aluminum It is formed of a transparent conductive oxide in which at least one component and oxygen (O) are bonded among (Al) and lanthanum (La) element series metals.

In another embodiment, the transparent conductive thin film layer is formed of a transparent conductive nitride formed of titanium (Ti) and nitrogen (N).

Preferably, the modified metal layer is formed to a thickness of 1 nanometer to 20 nanometers.

In addition, the thickness of the transparent conductive thin film layer is formed from 10 nanometers to 1000 nanometers.

In addition, a metal insertion layer may be additionally interposed between the modified metal layer and the transparent conductive thin film layer. The metal insertion layer is platinum (Pt), nickel (Ni), gold (Au), ruthenium (Ru), palladium (Pd), rhodium (Rh), iridium (Ir), zinc (Zn), magnesium (Mg) At least one selected from chromium (Cr), copper (Cu), cobalt (Co), indium (In), tin (Sn), and lanthanum-based elements, alloys formed from these metals, nitrides formed from solid solutions, or transition metals Using at least one layer of the material is characterized in that formed.

In addition, in order to achieve the above object, the manufacturing method of the top emitter nitride light emitting device according to the present invention is a manufacturing method of the top emitter nitride light emitting device having an active layer between the n-type cladding layer and the p-type cladding layer. In the multi-layer structure of the n-type cladding layer, the active layer and the p-type cladding layer on the substrate, at least one or more groups are laminated on the p-type cladding layer of the light emitting structure by laminating a modified metal layer / transparent conductive thin film layer. Forming an ohmic contact layer; And heat treating the electrode structure subjected to the above steps, wherein the modified metal layer is formed of silver (Ag) as a main component.

According to another aspect of the present invention, the transparent conductive thin film may include a dopant for controlling electrical properties of the transparent conductive oxide and the transparent conductive nitride. Herein, at least one of the elements classified as metals on the periodic table of the material is applied as a dopant.

The heat treatment step is preferably performed for 10 seconds to 3 hours at room temperature to 800 degrees.

In addition, the heat treatment step is performed in a gas atmosphere containing at least one of nitrogen, argon, helium, oxygen, hydrogen, air, vacuum in the reactor in which the electrode structure is built.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred top-emitting nitride-based light emitting device and a method of manufacturing the same.

1 is a cross-sectional view showing a top-emitting light emitting device according to a first embodiment of the present invention.

Referring to the drawings, the top-emitting light emitting device includes a substrate 110, a buffer layer 120, an n-type cladding layer 130, an active layer 140, a p-type cladding layer 150, a multi-ohmic contact layer 160 This structure is laminated sequentially. Reference numeral 180 denotes a p-type electrode pad, and 190 denotes an n-type electrode pad.

In the multi-ohmic contact layer 160, the modified metal layer 160a and the transparent conductive thin film layer 160b are sequentially stacked.

Here, the substrate 110 to the p-type cladding layer 150 correspond to the light emitting structure, and the multi-ohmic contact layer 160 stacked on the p-type cladding layer 150 corresponds to the p-type electrode structure.

The substrate 110 may be formed of any one of sapphire (Al ₂ O ₃ ), silicon carbide (SiC), silicon (Si), and gallium arsenide (GaAs).

The buffer layer 120 may be omitted.

Each layer from the buffer layer 120 to the p-type cladding layer 150 is Al _x In _y Ga _z N (0≤x≤1, 0≤y≤1, 0≤z≤1, which is a general formula of a group III nitride compound). , Based on any compound selected from the compounds represented by 0 ≦ x + y + z ≦ 1), and the dopant is added to the n-type cladding layer 130 and the p-type cladding layer 150.

In addition, the active layer 140 may be configured in various known manners, such as a monolayer or an MQW layer.

As an example, when a gallium nitride (GaN) -based compound is applied, the buffer layer 120 is formed of GaN, and the n-type cladding layer 130 is formed of Si, Ge, Se, Te, or the like as n-type dopants to GaN. The active layer is formed of InGaN / GaN MQW or AlGaN / GaN MQW, and the p-type cladding layer 150 is formed by adding Mg, Zn, Ca, Sr, Ba, etc. to GaN as a P-type dopant.

An n-type ohmic contact layer (not shown) may be interposed between the n-type cladding layer 130 and the n-type electrode pad 190, and in the n-type ohmic contact layer, titanium (Ti) and aluminum (Al) may be sequentially formed. Various known structures, such as laminated layer structure, can be applied.

The p-type electrode pad 180 may have a layer structure in which nickel (Ni) / gold (Au) or silver (Ag) / gold (Au) is sequentially stacked.

The method of forming each layer is known deposition such as electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), dual-type thermal evaporator, sputtering, etc. What is necessary is just to form by a system.

The multi-ohmic contact layer 160 is formed of a modified metal layer 160a formed on the p-type cladding layer 150 and a transparent conductive thin film layer 160b formed on the modified metal layer 160a as a p-type electrode structure.

The modified metal layer 160a has a high electrical conductivity, and is easily decomposed into conductive nano phase particles during heat treatment in an oxygen atmosphere at a temperature of 600 ° C. or less, and is not easily oxidized.

Silver (Ag) is applied as a material for the modified metal layer 160a having such a condition.

Preferably, the modified metal layer 160a is formed of silver alone. Alternatively, the modified metal layer 160a may be formed of an alloy or a solid solution mainly containing silver (Ag).

In addition, the thickness of the modified metal layer 160a forming the multi-ohmic contact layer 160 is less than 1 nanometer to 20 nanometers, which is easily decomposed into conductive nanophase particles during heat treatment. desirable.

The transparent conductive thin film layer 160b is applied to either a transparent conductive oxide (TCO) or a transparent conductive nitride (TCN).

Transparent conductive oxides (TCO) are indium (In), tin (Sn), zinc (Zn), gallium (Ga), cadmium (Cd), magnesium (Mg), beryllium (Be), silver (Ag), molybdenum (Mo) ), Vanadium (V), copper (Cu), iridium (Ir), rhodium (Rh), ruthenium (Ru), tungsten (W), cobalt (Co), nickel (Ni), manganese (Mn), aluminum ( A transparent conductive oxide formed of at least one or more components and oxygen (O) from metals such as Al) and lanthanum (La) series is used.

The material for the transparent conductive oxide may be selected in consideration of a work function value and sheet resistance.

 The transparent conductive nitride (TN) is preferably a transparent conductive nitride formed of titanium (Ti) and nitrogen (N) having a low sheet resistance and high light transmittance.

In addition, the transparent conductive oxide (TCO) and the transparent conductive nitride (TCN) applied to the transparent conductive thin film layer 160b may add at least one or more of the metal components on the periodic table of the elements to the dopant to improve electrical properties with respect to the main component. Can be.

Herein, the addition ratio of the dopant added in order to have appropriate electrical properties to the transparent conductive oxide (TCO) and the transparent conductive nitride (TCN) is preferably applied within the range of 0.001 to 20 weight percent. The weight percentage refers to the weight ratio between the elements added.

In addition, the thickness of the transparent conductive thin film layer 160b is preferably formed to a thickness of 10 nanometers to 1000 nanometers having a suitable light transmittance and electrical conductivity.

The multi-ohmic contact layer 160 may be formed of any one of an e-beam evaporator, a thermal evaporator, a sputtering deposition, and a pulsed laser deposition.

In addition, the deposition temperature applied to form the multi-ohmic contact layer 160 is in the range of 20 ℃ to 1500 ℃, the pressure in the deposition machine is carried out at atmospheric pressure to about 10 ^-12 Torr.

In addition, after the multi-ohmic contact layer 160 is formed, it is preferable to undergo an annealing process.

Annealing is performed for 10 seconds to 3 hours in a vacuum or gas atmosphere at 100 ℃ to 800 ℃ temperature in the reactor.

At least one gas of nitrogen, argon, helium, oxygen, hydrogen, or air may be applied to the gas introduced into the reactor during the heat treatment.

FIG. 2 illustrates that a p-type electrode structure according to the first embodiment of the present invention is laminated with 3 nm of silver (Ag) on the p-type cladding layer 150 with the modified metal layer 160a, and a transparent conductive thin film layer thereon. 200 nanometers of ITO and then heat-treated at 530 ° C, and 200 nanometers of ITO alone on the p-type cladding layer 150 and then heat-treated at the same temperature (530 ° C). The results of measuring light transmittance are shown.

As can be seen from FIG. 2, it can be seen that the case where the electrode is formed of the multi-ohmic contact layer 160 as in the present embodiment is higher than the case where the ITO is applied alone.

In addition, FIG. 3 illustrates a three nanometer (Ag) layer of silver (Ag) on the p-type cladding layer 150 as the modified metal layer 160a, and SnO ₂ as 200 on the transparent conductive thin film layer 160b. After the nanometer lamination, the result of heat-treatment at 530 ° C. and gold (Au) were stacked on the p-type cladding layer 150 by 3 nanometers, and 200 nm of SnO ₂ was deposited on the transparent conductive thin film layer at the same temperature ( The voltage-current characteristics of each of the heat-treated products at 530 ° C.) are shown.

As can be seen from FIG. 3, it can be seen that the use of the modified metal layer 150a as silver (Ag) is significantly superior in electrical properties than when gold is replaced with Au.

From the results of FIGS. 2 and 3, the multi-ohmic contact layer 160 formed by sequentially stacking the modified metal layer 160a and the transparent conductive thin film layer 160b mainly composed of silver and performing heat treatment provides the following advantages. do. That is, gallium-related compounds (gallides) are formed between the p-type cladding layer 150 and the modified metal layer 160a to increase the effective surface hole concentration, and the generation of gallium oxide (Ga ₂ O ₃ ) is suppressed, thereby preventing Schottky barriers. Its width is reduced, it causes tunneling which is favorable for forming ohmic contact, maintains high light transmittance when heat-treated at low temperature below 600 ℃, and has low sheet resistance below 10 Ω / □. Provide the characteristics.

On the other hand, the multi-ohmic contact layer 160 may be formed by repeatedly stacked on the basis of the modified metal layer (160a) / transparent conductive thin film layer (160b).

An example of such a repeat laminate structure is shown in FIG. Elements having the same function as in the drawing shown in FIG. 1 are denoted by the same reference numerals.

Referring to the drawings, the multi-ohmic contact layer 160 is formed of the first modified metal layer 160a / the first transparent conductive thin film layer 160b / the second modified metal layer 160c / the second transparent conductive thin film layer 160d. .

The first and second modified metal layers 160a and 160c are formed of silver or a silver-based alloy or solid solution, which are the aforementioned materials, and are formed to a thickness of 1 to 20 nanometers, respectively, and the first and second transparent conductive thin film layers. 160b and 160d are also formed with the above-described materials at a thickness of 10 to 1000 nanometers, respectively.

The light emitting device described with reference to FIG. 4 is formed by depositing the corresponding p-type electrode structure by the deposition method described with reference to FIG. 1 prior to the light emitting structure stacked up to the p-type cladding layer 150 on the substrate 110 and then performing a heat treatment process. What is necessary is to manufacture through.

Through the heat treatment process, optical transmittance and electrical current-voltage characteristics, which are optical properties, are improved than before the heat treatment process.

5 is a cross-sectional view illustrating a p-type electrode structure of a top emission light emitting device according to still another embodiment of the present invention. As shown in FIG. 5, the p-type electrode structure according to the present exemplary embodiment additionally includes a metal insertion layer 160e between the modified metal layer 160a and the transparent conductive thin film layer 160b. The metal insertion layer 160e is formed as a second modified metal layer that serves substantially the same role as the modified metal layer 160a below.

Metal materials that can be used as the metal insertion layer 160e include platinum (Pt), nickel (Ni), gold (Au), ruthenium (Ru), palladium (Pd), rhodium (Rh), and iridium (Ir). ), Zinc (Zn), magnesium (Mg), chromium (Cr), copper (Cu), cobalt (Co), indium (In), tin (Sn), lanthanum-based elements, alloys formed of these metals, solid solutions Alternatively, at least one selected from nitrides formed of transition metals may be used.

FIG. 6A is a graph illustrating a result of measuring current-voltage characteristics of a light emitting device when a metal insertion layer 160e is added. Silver (Ag) was deposited to a thickness of 1 nm with the modified metal layer 160a, and platinum (Pt) was also stacked with a thickness of 1 nm as the metal insertion layer 160e, and 200 nm thick of ITO as the transparent conductive thin film layer 160b. Laminated. Fig. 6A shows the current-voltage characteristics of the p-type electrode structure thus formed before heat treatment (■) and in the air atmosphere at 500 ° C., 600 ° C., and 700 ° C., respectively. Is showing. As shown in Figure 6a, especially when the heat treatment at 600 ℃ or more shows very excellent electrical properties.

6B is a graph showing light transmittance of a p-type electrode structure according to a third exemplary embodiment of the present invention compared with a conventional electrode. Here, as in the case of FIG. 6A, the p-type electrode structure is formed by stacking silver (Ag) in a thickness of 1 nm with the modified metal layer 160a and stacking platinum (Pt) with a metal insertion layer 160e in a thickness of 1 nm. Then, ITO was laminated to a thickness of 200 nm with the transparent conductive thin film layer 160b, and then formed by heat treatment at about 600 ° C. for 1 minute in an air atmosphere. The conventional electrode to be compared was formed by laminating a nickel (Ni) and a gold (Au) layer at 5 nm, respectively, and then performing heat treatment at 530 ° C. for 1 minute in an air atmosphere. As shown in FIG. 6B, when the conventional electrode was used in the wavelength range of 450 nm to 500 nm, light transmittance was about 73% to 81%. However, according to the third embodiment of the present invention, it exhibits high light transmittance of almost 90% within the same wavelength range.

 As described so far, according to the top-emitted nitride light emitting device according to the present invention and a method of manufacturing the same, the ohmic contact property with the p-type cladding layer is improved, thereby not only showing excellent current-voltage characteristics but also high light. The luminous efficiency of the device can be improved by providing transparency.

Claims (13)

In a top-emit type nitride light emitting device having an active layer between an n-type cladding layer and a p-type cladding layer, And a multi-ohmic contact layer in which at least one or more pairs are repeatedly stacked on the p-type cladding layer using a modified metal layer / transparent conductive thin film layer as a repeating repeating unit. The method of claim 1, The modified metal layer is a top emission type nitride light emitting device, characterized in that formed mainly of silver (Ag). The method of claim 1, The transparent conductive thin film layer is formed of any one of a transparent conductive oxide (TCO) and a transparent conductive nitride (TCN), The transparent conductive oxide is indium (In), tin (Sn), zinc (Zn), gallium (Ga), cadmium (Cd), magnesium (Mg), beryllium (Be), silver (Ag), molybdenum (Mo) , Vanadium (V), copper (Cu), iridium (Ir), rhodium (Rh), ruthenium (Ru), tungsten (W), cobalt (Co), nickel (Ni), manganese (Mn), aluminum (Al ), And includes a lanthanum (La) element-based metal formed by combining at least one component and oxygen (O), The transparent conductive thin film layer is a top emission type nitride light emitting device, characterized in that formed by containing titanium (Ti) and nitrogen (N). The method of claim 1, The modified metal layer is a top emission type nitride light emitting device, characterized in that formed in a thickness of 1 nanometer to 20 nanometers. The method of claim 1, The transparent conductive thin film layer is a top emission type nitride-based light emitting device, characterized in that formed in a thickness of 10 nanometers to 1000 nanometers. The method of claim 1, Top-emitting nitride-based light emitting device, characterized in that the metal insertion layer is additionally interposed between the modified metal layer and the transparent conductive thin film layer. The method of claim 6, The metal insertion layer is platinum (Pt), nickel (Ni), gold (Au), ruthenium (Ru), palladium (Pd), rhodium (Rh), iridium (Ir), zinc (Zn), magnesium (Mg) At least one selected from chromium (Cr), copper (Cu), cobalt (Co), indium (In), tin (Sn), and lanthanum-based elements, alloys formed from these metals, nitrides formed from solid solutions, or transition metals Top-emitting nitride-based light emitting device, characterized in that formed in at least one layer using a material of. In the manufacturing method of the top-emit type nitride light emitting device having an active layer between the n-type cladding layer and the p-type cladding layer, Multi-ohmic contact layer by laminating at least one group on the p-type cladding layer of the light emitting structure in which the n-type cladding layer, the active layer and the p-type cladding layer are sequentially stacked on the substrate by using a modified metal layer / transparent conductive thin film layer as a repeating repeating unit. Forming a; And heat-treating the multi-omi contact layer formed in the step; The modified metal layer is a manufacturing method of the top-emitting type nitride light emitting device, characterized in that the silver (Ag) as a main component. The method of claim 8, The transparent conductive thin film layer is formed of any one of a transparent conductive oxide (TCO) and a transparent conductive nitride (TCN), The transparent conductive oxide is indium (In), tin (Sn), zinc (Zn), gallium (Ga), cadmium (Cd), magnesium (Mg), beryllium (Be), silver (Ag), molybdenum (Mo) , Vanadium (V), copper (Cu), iridium (Ir), rhodium (Rh), ruthenium (Ru), tungsten (W), cobalt (Co), nickel (Ni), manganese (Mn), aluminum (Al ), And includes a lanthanum (La) element-based metal formed by combining at least one component and oxygen (O), The transparent conductive thin film layer is a method of manufacturing a top-emitting nitride light emitting device, characterized in that formed by containing titanium (Ti) and nitrogen (N). The method of claim 8, The modified metal layer is a manufacturing method of the top emission type nitride light emitting device, characterized in that formed in a thickness of 1 nanometer to 20 nanometers. The method of claim 8, The transparent conductive thin film layer is a manufacturing method of the top emission type nitride light emitting device, characterized in that formed in a thickness of 10 nanometers to 1000 nanometers. The method of claim 8, A method of manufacturing a top emitter nitride light emitting device, characterized in that a metal insertion layer is additionally interposed between the modified metal layer and the transparent conductive thin film layer. The method of claim 8, The metal insertion layer is platinum (Pt), nickel (Ni), gold (Au), ruthenium (Ru), palladium (Pd), rhodium (Rh), iridium (Ir), zinc (Zn), magnesium (Mg) At least one selected from chromium (Cr), copper (Cu), cobalt (Co), indium (In), tin (Sn), and lanthanum-based elements, alloys formed from these metals, nitrides formed from solid solutions, or transition metals Method for producing a top-emitting nitride-based light emitting device, characterized in that formed in at least one layer using a material of.

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