KR100599960B1 - 박막 트랜지스터-액정표시장치의 제조방법 - Google Patents
박막 트랜지스터-액정표시장치의 제조방법 Download PDFInfo
- Publication number
- KR100599960B1 KR100599960B1 KR1019990063260A KR19990063260A KR100599960B1 KR 100599960 B1 KR100599960 B1 KR 100599960B1 KR 1019990063260 A KR1019990063260 A KR 1019990063260A KR 19990063260 A KR19990063260 A KR 19990063260A KR 100599960 B1 KR100599960 B1 KR 100599960B1
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- South Korea
- Prior art keywords
- amorphous silicon
- silicon layer
- channel
- chamber
- ohmic contact
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- 239000010409 thin film Substances 0.000 title abstract description 16
- 239000004973 liquid crystal related substance Substances 0.000 title abstract description 15
- 238000004519 manufacturing process Methods 0.000 title abstract description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 76
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 230000001681 protective effect Effects 0.000 claims abstract description 19
- 238000002161 passivation Methods 0.000 claims abstract description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000001257 hydrogen Substances 0.000 claims abstract description 15
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 15
- 238000000059 patterning Methods 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 235000011194 food seasoning agent Nutrition 0.000 claims abstract description 11
- 238000004140 cleaning Methods 0.000 claims abstract description 9
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 31
- 239000007789 gas Substances 0.000 claims description 10
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 238000005108 dry cleaning Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 47
- 238000009832 plasma treatment Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000035876 healing Effects 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/103—Materials and properties semiconductor a-Si
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Abstract
Description
상기 챔버 내부를 세정하는 단계는, 상기 챔버내에 Ar 가스 또는 NF3 가스를 주입하여 건식 세정하는 것을 특징으로 한다.
Claims (5)
- 하부 기판상에 게이트 전극을 형성하는 단계;상기 게이트 전극이 형성된 하부 기판 상부에 게이트 절연막, 채널용 비정질 실리콘층 및 오믹 콘택용 도핑된 비정질 실리콘층을 순차적으로 적층하는 단계;상기 게이트 절연막, 채널용 비정질 실리콘층 및 오믹 콘택용 도핑된 비정질 실리콘층을 형성한 챔버 내부를 세정하는 단계;상기 세정된 챔버 내부를 제 1 시즈닝하여 비정질 실리콘막을 균일한 두께로 성막하는 단계;상기 게이트 전극 상부의 상기 채널용 비정질 실리콘층과 오믹 콘택용 도핑된 비정질 실리콘층을 패터닝하여 액티브 영역을 형성하는 단계;상기 하부 기판상에 상기 액티브 영역을 덮도록 금속막을 증착하는 단계;상기 게이트 전극의 상부와 대응하는 상기 오믹 콘택용 도핑된 비정질 실리콘층의 중앙 부분이 노출되도록 상기 금속막을 패터닝하여 소오스 및 드레인 전극을 형성하는 단계;상기 소오스 및 드레인 전극 사이에 노출된 오믹 콘택용 도핑된 비정질 실리콘층의 노출된 부분을 패터닝하여 채널용 비정질 실리콘층의 소정 부분을 노출시키는 단계;상기 제 1 시즈닝된 챔버 내부를 제 2 시즈닝하여 이 후에 형성될 보호막을 균일한 두께로 성막하는 단계;상기 노출된 채널용 비정질 실리콘층을 수소 플라즈마 처리하는 단계;상기 하부 기판상에 상기 소오스 및 드레인 전극을 덮도록 보호막을 형성하는 단계;상기 드레인 전극이 노출되도록 상기 보호막을 패터닝하는 단계; 및상기 노출된 드레인 전극과 콘택되도록 상기 보호막 상부에 화소 전극을 형성하는 단계를 포함하는 것을 특징으로 하는 박막 트랜지스터-액정 표시 장치의 제조방법.
- 제 1 항에 있어서, 상기 챔버 내부를 세정하는 단계는, 상기 챔버내에 Ar 가스 또는 NF3 가스를 주입하여 건식 세정하는 것을 특징으로 하는 박막 트랜지스터-액정 표시 장치의 제조방법.
- 제 1 항에 있어서, 상기 보호막은 실리콘 질화막인 것을 특징으로 하는 박막 트랜지스터-액정 표시 장치의 제조방법.
- 삭제
- 제 1 항에 있어서, 상기 챔버는 PECVD 챔버인 것을 특징으로 하는 박막 트랜지스터-액정 표시 장치의 제조방법.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019990063260A KR100599960B1 (ko) | 1999-12-28 | 1999-12-28 | 박막 트랜지스터-액정표시장치의 제조방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019990063260A KR100599960B1 (ko) | 1999-12-28 | 1999-12-28 | 박막 트랜지스터-액정표시장치의 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20010060818A KR20010060818A (ko) | 2001-07-07 |
| KR100599960B1 true KR100599960B1 (ko) | 2006-07-12 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019990063260A Expired - Lifetime KR100599960B1 (ko) | 1999-12-28 | 1999-12-28 | 박막 트랜지스터-액정표시장치의 제조방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100599960B1 (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101238233B1 (ko) | 2006-06-30 | 2013-03-04 | 엘지디스플레이 주식회사 | 박막트랜지스터와 그 제조방법 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10892143B2 (en) * | 2016-10-21 | 2021-01-12 | Applied Materials, Inc. | Technique to prevent aluminum fluoride build up on the heater |
| US20180230597A1 (en) * | 2017-02-14 | 2018-08-16 | Applied Materials, Inc. | Method and apparatus of remote plasmas flowable cvd chamber |
-
1999
- 1999-12-28 KR KR1019990063260A patent/KR100599960B1/ko not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101238233B1 (ko) | 2006-06-30 | 2013-03-04 | 엘지디스플레이 주식회사 | 박막트랜지스터와 그 제조방법 |
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| Publication number | Publication date |
|---|---|
| KR20010060818A (ko) | 2001-07-07 |
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