KR100594602B1 - 구리 기재 저열팽창 고열전도 부재의 제조 방법 - Google Patents
구리 기재 저열팽창 고열전도 부재의 제조 방법 Download PDFInfo
- Publication number
- KR100594602B1 KR100594602B1 KR1020040028682A KR20040028682A KR100594602B1 KR 100594602 B1 KR100594602 B1 KR 100594602B1 KR 1020040028682 A KR1020040028682 A KR 1020040028682A KR 20040028682 A KR20040028682 A KR 20040028682A KR 100594602 B1 KR100594602 B1 KR 100594602B1
- Authority
- KR
- South Korea
- Prior art keywords
- powder
- copper
- thermal expansion
- thermal conductivity
- alloy powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 128
- 239000010949 copper Substances 0.000 title claims abstract description 66
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 66
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000000463 material Substances 0.000 title claims description 13
- 239000000843 powder Substances 0.000 claims abstract description 260
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 210
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 116
- 239000000956 alloy Substances 0.000 claims abstract description 116
- 229910052742 iron Inorganic materials 0.000 claims abstract description 105
- 239000011159 matrix material Substances 0.000 claims abstract description 93
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 85
- 238000004881 precipitation hardening Methods 0.000 claims abstract description 70
- 239000011812 mixed powder Substances 0.000 claims abstract description 14
- 238000002156 mixing Methods 0.000 claims abstract description 5
- 239000002245 particle Substances 0.000 claims description 29
- 238000010791 quenching Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 238000007711 solidification Methods 0.000 claims description 5
- 230000008023 solidification Effects 0.000 claims description 5
- 230000006835 compression Effects 0.000 claims 1
- 238000007906 compression Methods 0.000 claims 1
- 238000005245 sintering Methods 0.000 abstract description 40
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 16
- 229910052759 nickel Inorganic materials 0.000 abstract description 8
- 238000007747 plating Methods 0.000 abstract description 4
- 238000000748 compression moulding Methods 0.000 abstract description 3
- 239000012071 phase Substances 0.000 description 49
- 230000000694 effects Effects 0.000 description 13
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 10
- 230000032683 aging Effects 0.000 description 10
- 238000001556 precipitation Methods 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- 239000011733 molybdenum Substances 0.000 description 8
- 229910052750 molybdenum Inorganic materials 0.000 description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 238000000465 moulding Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000013329 compounding Methods 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- ALKZAGKDWUSJED-UHFFFAOYSA-N dinuclear copper ion Chemical compound [Cu].[Cu] ALKZAGKDWUSJED-UHFFFAOYSA-N 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 230000002250 progressing effect Effects 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- -1 -52.3 Co-10.4Cr) Inorganic materials 0.000 description 1
- 229910017813 Cu—Cr Inorganic materials 0.000 description 1
- 229910017824 Cu—Fe—P Inorganic materials 0.000 description 1
- 229910017985 Cu—Zr Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- 238000005056 compaction Methods 0.000 description 1
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/08—Metallic powder characterised by particles having an amorphous microstructure
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/0425—Copper-based alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Powder Metallurgy (AREA)
Abstract
Description
Claims (10)
- 삭제
- 삭제
- 삭제
- 100℃까지의 열팽창 계수가 6×10-6/K 이하인 철 기재 합금 분말 5~60 질량%와, 나머지는 구리 분말, 석출 경화형 구리 합금 분말, 및 그들의 예비 혼합 분말중 어느 하나의 매트릭스 분말이며, 상기 철 기재 합금 분말과 상기 매트릭스 분말을 혼합한 혼합 분말을 상대 밀도로 93% 이상으로 압축 성형하고, 400~600℃에서 소결하는 것을 특징으로 하는 구리 기재 저열팽창 고열전도 부재의 제조 방법.
- 제 4 항에 있어서, 상기 매트릭스 분말이, 석출 경화형 구리 합금 분말에, 질량비로, 75% 이하의 순동 분말을 첨가한 예비 혼합 분말인 것을 특징으로 하는 구리 기재 저열팽창 고열전도 부재의 제조 방법.
- 제 4 항 또는 제 5항에 있어서, 상기 구리 분말이, -100메시의 분말이고, 또한 입경 50㎛ 이상의 분말의 함유량이 60% 이하인 분말이고,상기 석출 경화형 구리 합금 분말이, -100메시의 분말이고, 또한 입경 50㎛ 이상의 분말의 함유량이 70% 이하인 분말이고,상기 철 기재 합금 분말이, -100메시이고, 또한, 입경 50㎛ 이하의 분말의 함유량이 60% 이하인 분말인 것을 특징으로 하는 구리 기재 저열팽창 고열전도 부재의 제조 방법.
- 제 6 항에 있어서, 상기 매트릭스 분말이, 구리 분말과 석출형 구리 합금 분말의 혼합 분말일 경우에 있어서,상기 구리 합금 분말이, -100메시이고, 또한, 입경 50㎛ 이상의 분말의 함유 량이 40% 이하인 분말인 것을 특징으로 하는 구리 기재 저열팽창 고열전도 부재의 제조 방법.
- 제 4 항 또는 제 5 항에 있어서, 상기 석출 경화형 구리 합금 분말이, 석출 경화형 구리 합금의 급냉 응고 분말인 것을 특징으로 하는 구리 기재 저열팽창 고열전도 부재의 제조 방법.
- 제 6 항에 있어서, 상기 석출 경화형 구리 합금 분말이, 석출 경화형 구리 합금의 급냉 응고 분말인 것을 특징으로 하는 구리 기재 저열팽창 고열전도 부재의 제조 방법.
- 제 7 항에 있어서, 상기 석출 경화형 구리 합금 분말이, 석출 경화형 구리 합금의 급냉 응고 분말인 것을 특징으로 하는 구리 기재 저열팽창 고열전도 부재의 제조 방법.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003123423A JP3909037B2 (ja) | 2003-04-28 | 2003-04-28 | 低熱膨張高熱伝導部材の製造方法 |
JPJP-P-2003-00123423 | 2003-04-28 | ||
JPJP-P-2003-00134305 | 2003-05-13 | ||
JP2003134305A JP3883985B2 (ja) | 2003-05-13 | 2003-05-13 | 銅基低熱膨張高熱伝導部材の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040093419A KR20040093419A (ko) | 2004-11-05 |
KR100594602B1 true KR100594602B1 (ko) | 2006-06-30 |
Family
ID=33302268
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040028682A Expired - Fee Related KR100594602B1 (ko) | 2003-04-28 | 2004-04-26 | 구리 기재 저열팽창 고열전도 부재의 제조 방법 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7378053B2 (ko) |
KR (1) | KR100594602B1 (ko) |
DE (1) | DE102004020833B4 (ko) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090142010A1 (en) * | 2005-01-05 | 2009-06-04 | Ntn Corporation | Sintered metal material, sintered oil-impregnated bearing formed of the metal material, and fluid lubrication bearing device |
CN102248168B (zh) * | 2011-03-28 | 2013-03-20 | 中南大学 | 一种陶瓷/铜复合材料喉衬的制造方法 |
JP2013115083A (ja) * | 2011-11-25 | 2013-06-10 | Fujitsu Semiconductor Ltd | 半導体装置及びその製造方法 |
CN104137191A (zh) * | 2011-12-28 | 2014-11-05 | 矢崎总业株式会社 | 超细导体材料、超细导体、超细导体的制造方法以及超细电线 |
CN104084588B (zh) * | 2014-06-06 | 2016-08-24 | 安徽吉思特智能装备有限公司 | 一种高强度粉末冶金轮毂轴承单元 |
JP6030186B1 (ja) | 2015-05-13 | 2016-11-24 | 株式会社ダイヘン | 銅合金粉末、積層造形物の製造方法および積層造形物 |
JP6812113B2 (ja) * | 2016-02-25 | 2021-01-13 | Ntn株式会社 | 焼結含油軸受及びその製造方法 |
CN106378458A (zh) * | 2016-08-29 | 2017-02-08 | 河源富马硬质合金股份有限公司 | 一种采用真空挤压方式制备硬质合金的方法 |
WO2018079304A1 (ja) | 2016-10-25 | 2018-05-03 | 株式会社ダイヘン | 銅合金粉末、積層造形物の製造方法および積層造形物 |
CN108145153A (zh) * | 2018-02-06 | 2018-06-12 | 中国科学院长春应用化学研究所 | 一种铜材料及其制备方法 |
CN114892040B (zh) * | 2022-06-02 | 2023-03-24 | 浙江大学 | 一种高强高导铜合金的设计方法及制备方法 |
CN116497245A (zh) * | 2023-04-19 | 2023-07-28 | 合肥工业大学 | 一种掺杂金刚石钨铜合金及其制备方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2033709A (en) * | 1935-02-08 | 1936-03-10 | Westinghouse Electric & Mfg Co | Copper alloys |
US3483439A (en) * | 1967-10-18 | 1969-12-09 | Stackpole Carbon Co | Semi-conductor device |
US3807968A (en) * | 1969-09-03 | 1974-04-30 | Copper Range Co | Products involving copper composition materials and assemblages |
JPS4947124B1 (ko) * | 1971-04-26 | 1974-12-13 | ||
US4158719A (en) * | 1977-06-09 | 1979-06-19 | Carpenter Technology Corporation | Low expansion low resistivity composite powder metallurgy member and method of making the same |
US4130422A (en) * | 1977-06-16 | 1978-12-19 | The United States Of America As Represented By The United States Department Of Energy | Copper-base alloy for liquid phase sintering of ferrous powders |
JPS593534B2 (ja) * | 1979-07-28 | 1984-01-24 | 日立粉末冶金株式会社 | 鉄銅系高密度焼結合金の製造法 |
GB2067221B (en) * | 1979-12-22 | 1984-01-11 | Tokyo Oilless Metal Ind | Sintered alloys |
US4505987A (en) * | 1981-11-10 | 1985-03-19 | Oiles Industry Co., Ltd. | Sliding member |
JPS5921032A (ja) | 1982-07-26 | 1984-02-02 | Sumitomo Electric Ind Ltd | 半導体装置用基板 |
JPS62284032A (ja) | 1986-06-03 | 1987-12-09 | Nisshin Steel Co Ltd | 調整された熱膨張率と熱伝導度を有する複合金属材料 |
EP0342296A1 (en) * | 1988-05-18 | 1989-11-23 | KABUSHIKI KAISHA KOBE SEIKO SHO also known as Kobe Steel Ltd. | Forming and sintering a powder mixture containing Al or Cu |
US4836979A (en) * | 1988-06-14 | 1989-06-06 | Inco Limited | Manufacture of composite structures |
JPH02213452A (ja) | 1989-02-15 | 1990-08-24 | Hitachi Metals Ltd | 低熱膨張高熱伝導性合金 |
US5152959A (en) * | 1991-06-24 | 1992-10-06 | Ametek Speciality Metal Products Division | Sinterless powder metallurgy process for manufacturing composite copper strip |
JPH0913102A (ja) | 1995-06-29 | 1997-01-14 | Nippon Tungsten Co Ltd | 拡散防止被膜付金属粒焼結体及びその製造方法 |
US6132676A (en) * | 1997-06-30 | 2000-10-17 | Massachusetts Institute Of Technology | Minimal thermal expansion, high thermal conductivity metal-ceramic matrix composite |
US6132486A (en) * | 1998-11-09 | 2000-10-17 | Symmco, Inc. | Powdered metal admixture and process |
JP2002129207A (ja) * | 2000-10-23 | 2002-05-09 | Ntn Corp | 摺動部材 |
-
2004
- 2004-04-26 KR KR1020040028682A patent/KR100594602B1/ko not_active Expired - Fee Related
- 2004-04-27 US US10/832,247 patent/US7378053B2/en not_active Expired - Fee Related
- 2004-04-28 DE DE102004020833A patent/DE102004020833B4/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7378053B2 (en) | 2008-05-27 |
DE102004020833A1 (de) | 2004-11-25 |
KR20040093419A (ko) | 2004-11-05 |
DE102004020833B4 (de) | 2007-08-02 |
US20040213692A1 (en) | 2004-10-28 |
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